CN115433926A - 多层pcb沉铜工艺 - Google Patents
多层pcb沉铜工艺 Download PDFInfo
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 79
- 239000010949 copper Substances 0.000 title claims abstract description 79
- 238000005137 deposition process Methods 0.000 title claims abstract description 35
- 230000003213 activating effect Effects 0.000 claims abstract description 34
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 32
- 230000004913 activation Effects 0.000 claims abstract description 26
- 239000003292 glue Substances 0.000 claims abstract description 20
- 238000009210 therapy by ultrasound Methods 0.000 claims abstract description 19
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims abstract description 18
- 239000008103 glucose Substances 0.000 claims abstract description 18
- 238000007747 plating Methods 0.000 claims abstract description 18
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 claims abstract description 17
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 13
- 239000002245 particle Substances 0.000 claims abstract description 13
- 238000009832 plasma treatment Methods 0.000 claims abstract description 13
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims abstract description 11
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims abstract description 11
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims abstract description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 42
- 238000002791 soaking Methods 0.000 claims description 21
- 239000012459 cleaning agent Substances 0.000 claims description 20
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 claims description 18
- 238000005406 washing Methods 0.000 claims description 15
- 239000012286 potassium permanganate Substances 0.000 claims description 14
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 11
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000001133 acceleration Effects 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 6
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 6
- 238000007865 diluting Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000003760 magnetic stirring Methods 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 238000007788 roughening Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract description 23
- 238000000034 method Methods 0.000 abstract description 15
- 239000000126 substance Substances 0.000 abstract description 9
- 239000003638 chemical reducing agent Substances 0.000 abstract description 4
- 239000002270 dispersing agent Substances 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 description 23
- 230000000694 effects Effects 0.000 description 6
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 6
- 239000007787 solid Substances 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- LAXBNTIAOJWAOP-UHFFFAOYSA-N 2-chlorobiphenyl Chemical compound ClC1=CC=CC=C1C1=CC=CC=C1 LAXBNTIAOJWAOP-UHFFFAOYSA-N 0.000 description 4
- NMWSKOLWZZWHPL-UHFFFAOYSA-N 3-chlorobiphenyl Chemical compound ClC1=CC=CC(C=2C=CC=CC=2)=C1 NMWSKOLWZZWHPL-UHFFFAOYSA-N 0.000 description 4
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052938 sodium sulfate Inorganic materials 0.000 description 4
- 235000011152 sodium sulphate Nutrition 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 3
- JAYCNKDKIKZTAF-UHFFFAOYSA-N 1-chloro-2-(2-chlorophenyl)benzene Chemical compound ClC1=CC=CC=C1C1=CC=CC=C1Cl JAYCNKDKIKZTAF-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- FPWNLURCHDRMHC-UHFFFAOYSA-N 4-chlorobiphenyl Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1 FPWNLURCHDRMHC-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- ZSFDBVJMDCMTBM-UHFFFAOYSA-N ethane-1,2-diamine;phosphoric acid Chemical compound NCCN.OP(O)(O)=O ZSFDBVJMDCMTBM-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
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- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
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- C23C18/24—Roughening, e.g. by etching using acid aqueous solutions
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
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Abstract
本发明公开了多层PCB沉铜工艺,涉及PCB沉铜技术领域,包括S1、等离子处理;S2、超声处理;S3、除胶;S4、除油;S5、微蚀处理;S6、活化处理:配置活化液,将经过微蚀处理的多层PCB放入活化液中,使胶体钯微粒吸附到多层PCB的板面和孔壁上;S7、加速处理;S8、化学镀铜处理;通过本发明的沉铜工艺加工多层PCB,可以保证多层PCB上小孔壁的背光超过9级,同时也缩短了沉铜起镀时间,在大批量生产多层PCB时,可以提高沉铜工艺的工作效率,活化液中的氯化钯采用聚乙烯吡咯烷酮作为分散剂,提高了活化液的分散性,应用于沉铜时不需要解胶,简化了沉铜工艺,葡萄糖溶液作为还原剂,可以自然分解,绿色环保。
Description
技术领域
本发明涉及PCB沉铜技术领域,具体涉及多层PCB沉铜工艺。
背景技术
PCB是电子元器件的支撑体,是电子元器件电气相互连接的载体,PCB沉铜是化学镀铜的简称,也叫做镀通孔,是指在已钻孔的不导电的孔壁基材上,用化学的方法沉积上一层薄薄的化学铜,以作为后面电镀铜的基底,多层PCB沉铜工艺是指对多层PCB上的通孔用化学的方法沉积上一层薄薄的化学铜;
现有的多层PCB沉铜工艺加工过程如附图3所示,沉铜工艺中使用的活化液主要成分是氯化钯,活化液呈现胶体状,有助于粘附在多层PCB的表面,但是活化液的分散性较差,多层PCB在经过化学沉铜处理后,还需要洗去多层PCB表面粘附的活化液,加工出的多层PCB上小孔壁的背光为7级,平整度差。
发明内容
为了克服上述的技术问题,本发明的目的在于提供多层PCB沉铜工艺,通过本发明的沉铜工艺加工多层PCB,可以保证多层PCB上小孔壁的背光超过9级,同时也缩短了沉铜起镀时间,在大批量生产多层PCB时,可以提高沉铜工艺的工作效率,活化液中的氯化钯采用聚乙烯吡咯烷酮作为分散剂,提高了活化液的分散性,应用于沉铜时不需要解胶,简化了沉铜工艺,葡萄糖溶液作为还原剂,可以自然分解,绿色环保。
本发明的目的可以通过以下技术方案实现:
多层PCB沉铜工艺,包括以下步骤:
S1、等离子处理:将多层PCB放入等离子处理机中,进行等离子处理,通过等离子的蚀刻作用,使多层PCB的表面粗糙,而粗糙的表面具有比光滑的表面更大的比表面积,提高多层PCB表面的吸附效果;
S2、超声处理:将经过等离子处理的多层PCB放入超声波处理器中进行超声处理,超声波会作用在多层PCB表面上,使多层PCB表面和小孔内壁粘附的固体杂质与多层PCB分离;
S3、除胶:配置除胶液,将经过超声处理的多层PCB放入除胶液中,溶解多层PCB上孔壁内的树脂以及胶渣;
S4、除油:使用碱性清洗剂,将经过除胶后的多层PCB放入碱性清洗剂中,洗去多层PCB表面的油渍以及氧化膜;
S5、微蚀处理:配置微蚀液,去除多层PCB表面的杂质,粗化铜表面;
S6、活化处理:配置活化液,将经过微蚀处理的多层PCB放入活化液中,使胶体钯微粒吸附到多层PCB的板面和孔壁上;
S7、加速处理:将多层PCB放入加速剂内,剥去胶体钯微粒外层的Sn+4外壳,露出钯核;
S8、化学镀铜处理:将经过S7处理后的多层PCB放入硫酸铜溶液中,使孔壁表面沉上一层铜。
作为本发明进一步的方案:所述步骤S3中除胶液包括高锰酸钾溶液和氢氧化钠溶液,所述除胶液的稳定为60℃至80℃,多层PCB在除胶液中浸泡的时间为5min至10min。
作为本发明进一步的方案:所述步骤S5中微蚀液包括过硫酸钠溶液和浓硫酸,多层PCB在微蚀液中浸泡的时间为1min至2min。
作为本发明进一步的方案:所述S6中配置活化液包括以下步骤:
Y1:将氯化钯溶于浓盐酸中,然后再依次加入去离子水和聚乙烯吡咯烷酮,通过磁力搅拌使其充分溶解;
Y2:将Y1中搅拌好的溶液加热至60℃,然后逐滴加入葡萄糖溶液,葡萄糖溶液加入完成后,静置保温5h后,自然冷却至室温;
Y3:将Y2中冷却后的溶液使用高速离心机离心分离10min,形成离心液;
Y4:先使用无水乙醇洗涤离心液3次-5次,再使用去离子水洗涤离心液3次-5次,最后将离心液稀释至25mg/L,形成活化液。
作为本发明进一步的方案:所述步骤Y2中葡萄糖溶液的浓度为0.20mol/L。
作为本发明进一步的方案:所述步骤Y3中高速离心机的工作转速为6000r/min至10000r/min。
作为本发明进一步的方案:所述步骤S6中活化液的温度为40℃-45℃,多层PCB在活化液中浸泡的时间为10min至20min。
作为本发明进一步的方案:所述步骤S7中加速剂为氟硼酸,氟硼酸的温度为40℃,多层PCB在氟硼酸中浸泡的时间为3min至5min。
本发明的有益效果:通过本发明的沉铜工艺加工多层PCB,可以保证多层PCB上小孔壁的背光超过9级,同时也缩短了沉铜起镀时间,在大批量生产多层PCB时,可以提高沉铜工艺的工作效率,活化液中的氯化钯采用聚乙烯吡咯烷酮作为分散剂,提高了活化液的分散性,应用于沉铜时不需要解胶,简化了沉铜工艺,葡萄糖溶液作为还原剂,可以自然分解,绿色环保。
附图说明
下面结合附图对本发明作进一步的说明。
图1是本发明的工艺流程图;
图2是本发明中活化液配置的工艺流程图;
图3是现有PCB沉铜工艺的流程图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。
准备5块相同的多层PCB,分别标记为1号至4号,其中1号至4号多层PCB采用本发明的沉铜工艺对多层PCB上的小孔进行沉铜操作,活化液采用本发明配置的活化液,以下分为4个实施例对1号至4号多层PCB分别阐述其加工过程,而5号多层PCB为对比实施例,使用活化剂磷酸乙二胺,由实施例5阐述其加工过程。
实施例1:
如图1-图2所示,对1号多层PCB进行沉铜工艺,具体加工过程包括以下步骤:
S1、等离子处理:将多层1号多层PCB放入等离子处理机中,进行等离子处理,通过等离子的蚀刻作用,使1号多层PCB的表面粗糙,而粗糙的表面具有比光滑的表面更大的比表面积,提高1号多层PCB表面的吸附效果;
S2、超声处理:将经过等离子处理的多层PCB放入超声波处理器中进行超声处理,超声波会作用在1号多层PCB表面上,使1号多层PCB表面和小孔内壁粘附的固体杂质与多层PCB分离;
S3、除胶:配置除胶液,除胶液包括高锰酸钾溶液和氢氧化钠溶液,高锰酸钾溶液的浓度为50g/L,氢氧化钠溶液的为40g/L,取相同体积的高锰酸钾溶液和氢氧化钠溶液混合在一起,所述除胶液的温度为60℃,多层PCB在除胶液中浸泡的时间为5min,将经过超声处理的1号多层PCB放入除胶液中,溶解多层PCB上孔壁内的树脂以及胶渣;
S4、除油:使用碱性清洗剂,碱性清洗剂会溶解油渍以及氧化膜,将经过除胶后的1号多层PCB放入碱性清洗剂中,碱性清洗剂洗去1号多层PCB表面的油渍以及氧化膜,使多层PCB表面更加洁净;
S5、微蚀处理:配置微蚀液,微蚀液包括过硫酸钠溶液和浓硫酸,过硫酸钠溶液的浓度为60g/L,微蚀液中硫酸钠溶液和浓硫酸的体积比为9:1,1号多层PCB在微蚀液中浸泡的时间为1min,去除1号多层PCB表面的杂质,粗化铜表面;
S6、活化处理:配置活化液,具体是先将氯化钯溶于浓盐酸中,然后再依次加入去离子水和聚乙烯吡咯烷酮,通过磁力搅拌使其充分溶解,再将搅拌好的溶液加热至60℃,逐滴加入0.20mol/L的葡萄糖溶液,在葡萄糖溶液加入完成后,静置保温5h后,自然冷却至室温,将冷却后的溶液使用高速离心机以6000r/min离心分离10min,形成离心液,先使用无水乙醇洗涤离心液3次-5次,再使用去离子水洗涤离心液3次-5次,最后将离心液稀释至25mg/L,形成活化液,将经过微蚀处理的1号多层PCB放入活化液中,活化液的温度为40℃,1号多层PCB在活化液中浸泡的时间为10min,使胶体钯微粒吸附到多层PCB的板面和孔壁上;
S7、加速处理:将1号多层PCB放入加速剂内,加速剂为氟硼酸,氟硼酸的温度为40℃,1号多层PCB在氟硼酸中浸泡的时间为3min,剥去胶体钯微粒外层的Sn+4外壳,露出钯核;
S8、化学镀铜处理:将经过S7处理后的1号多层PCB放入硫酸铜溶液中,使孔壁表面沉上一层铜,检测1号多层PCB上孔壁的背光度,沉铜的起镀时间以及沉积厚度。
实施例2:
如图1-图2所示,对2号多层PCB进行沉铜工艺,具体加工过程包括以下步骤:
S1、等离子处理:将多层2号多层PCB放入等离子处理机中,进行等离子处理,通过等离子的蚀刻作用,使2号多层PCB的表面粗糙,而粗糙的表面具有比光滑的表面更大的比表面积,提高2号多层PCB表面的吸附效果;
S2、超声处理:将经过等离子处理的多层PCB放入超声波处理器中进行超声处理,超声波会作用在2号多层PCB表面上,使2号多层PCB表面和小孔内壁粘附的固体杂质与多层PCB分离;
S3、除胶:配置除胶液,除胶液包括高锰酸钾溶液和氢氧化钠溶液,高锰酸钾溶液的浓度为50g/L,氢氧化钠溶液的为40g/L,取相同体积的高锰酸钾溶液和氢氧化钠溶液混合在一起,所述除胶液的温度为70℃,多层PCB在除胶液中浸泡的时间为5min,将经过超声处理的2号多层PCB放入除胶液中,溶解多层PCB上孔壁内的树脂以及胶渣;
S4、除油:使用碱性清洗剂,碱性清洗剂会溶解油渍以及氧化膜,将经过除胶后的2号多层PCB放入碱性清洗剂中,碱性清洗剂洗去2号多层PCB表面的油渍以及氧化膜,使多层PCB表面更加洁净;
S5、微蚀处理:配置微蚀液,微蚀液包括过硫酸钠溶液和浓硫酸,过硫酸钠溶液的浓度为60g/L,微蚀液中硫酸钠溶液和浓硫酸的体积比为9:1,2号多层PCB在微蚀液中浸泡的时间为1min,去除2号多层PCB表面的杂质,粗化铜表面;
S6、活化处理:配置活化液,具体是先将氯化钯溶于浓盐酸中,然后再依次加入去离子水和聚乙烯吡咯烷酮,通过磁力搅拌使其充分溶解,再将搅拌好的溶液加热至60℃,逐滴加入0.20mol/L的葡萄糖溶液,在葡萄糖溶液加入完成后,静置保温5h后,自然冷却至室温,将冷却后的溶液使用高速离心机以7000r/min离心分离10min,形成离心液,先使用无水乙醇洗涤离心液3次-5次,再使用去离子水洗涤离心液3次-5次,最后将离心液稀释至25mg/L,形成活化液,将经过微蚀处理的2号多层PCB放入活化液中,活化液的温度为40℃,2号多层PCB在活化液中浸泡的时间为10min,使胶体钯微粒吸附到多层PCB的板面和孔壁上;
S7、加速处理:将2号多层PCB放入加速剂内,加速剂为氟硼酸,氟硼酸的温度为40℃,2号多层PCB在氟硼酸中浸泡的时间为3min,剥去胶体钯微粒外层的Sn+4外壳,露出钯核;
S8、化学镀铜处理:将经过S7处理后的2号多层PCB放入硫酸铜溶液中,使孔壁表面沉上一层铜,检测2号多层PCB上孔壁的背光度,沉铜的起镀时间以及沉积厚度。
实施例3:
如图1-图2所示,对3号多层PCB进行沉铜工艺,具体加工过程包括以下步骤:
S1、等离子处理:将多层3号多层PCB放入等离子处理机中,进行等离子处理,通过等离子的蚀刻作用,使3号多层PCB的表面粗糙,而粗糙的表面具有比光滑的表面更大的比表面积,提高3号多层PCB表面的吸附效果;
S2、超声处理:将经过等离子处理的多层PCB放入超声波处理器中进行超声处理,超声波会作用在3号多层PCB表面上,使3号多层PCB表面和小孔内壁粘附的固体杂质与多层PCB分离;
S3、除胶:配置除胶液,除胶液包括高锰酸钾溶液和氢氧化钠溶液,高锰酸钾溶液的浓度为50g/L,氢氧化钠溶液的为40g/L,取相同体积的高锰酸钾溶液和氢氧化钠溶液混合在一起,所述除胶液的温度为70℃,多层PCB在除胶液中浸泡的时间为7min,将经过超声处理的3号多层PCB放入除胶液中,溶解多层PCB上孔壁内的树脂以及胶渣;
S4、除油:使用碱性清洗剂,碱性清洗剂会溶解油渍以及氧化膜,将经过除胶后的3号多层PCB放入碱性清洗剂中,碱性清洗剂洗去3号多层PCB表面的油渍以及氧化膜,使多层PCB表面更加洁净;
S5、微蚀处理:配置微蚀液,微蚀液包括过硫酸钠溶液和浓硫酸,过硫酸钠溶液的浓度为60g/L,微蚀液中硫酸钠溶液和浓硫酸的体积比为9:1,3号多层PCB在微蚀液中浸泡的时间为1min,去除3号多层PCB表面的杂质,粗化铜表面;
S6、活化处理:配置活化液,具体是先将氯化钯溶于浓盐酸中,然后再依次加入去离子水和聚乙烯吡咯烷酮,通过磁力搅拌使其充分溶解,再将搅拌好的溶液加热至60℃,逐滴加入0.20mol/L的葡萄糖溶液,在葡萄糖溶液加入完成后,静置保温5h后,自然冷却至室温,将冷却后的溶液使用高速离心机以8000r/min离心分离10min,形成离心液,先使用无水乙醇洗涤离心液3次-5次,再使用去离子水洗涤离心液3次-5次,最后将离心液稀释至25mg/L,形成活化液,将经过微蚀处理的3号多层PCB放入活化液中,活化液的温度为40℃,3号多层PCB在活化液中浸泡的时间为10min,使胶体钯微粒吸附到多层PCB的板面和孔壁上;
S7、加速处理:将3号多层PCB放入加速剂内,加速剂为氟硼酸,氟硼酸的温度为40℃,3号多层PCB在氟硼酸中浸泡的时间为3min,剥去胶体钯微粒外层的Sn+4外壳,露出钯核;
S8、化学镀铜处理:将经过S7处理后的3号多层PCB放入硫酸铜溶液中,使孔壁表面沉上一层铜,检测3号多层PCB上孔壁的背光度,沉铜的起镀时间以及沉积厚度。
实施例4:
如图1-图2所示,对4号多层PCB进行沉铜工艺,具体加工过程包括以下步骤:
S1、等离子处理:将多层4号多层PCB放入等离子处理机中,进行等离子处理,通过等离子的蚀刻作用,使4号多层PCB的表面粗糙,而粗糙的表面具有比光滑的表面更大的比表面积,提高4号多层PCB表面的吸附效果;
S2、超声处理:将经过等离子处理的多层PCB放入超声波处理器中进行超声处理,超声波会作用在4号多层PCB表面上,使4号多层PCB表面和小孔内壁粘附的固体杂质与多层PCB分离;
S3、除胶:配置除胶液,除胶液包括高锰酸钾溶液和氢氧化钠溶液,高锰酸钾溶液的浓度为50g/L,氢氧化钠溶液的为40g/L,取相同体积的高锰酸钾溶液和氢氧化钠溶液混合在一起,所述除胶液的温度为80℃,多层PCB在除胶液中浸泡的时间为10min,将经过超声处理的4号多层PCB放入除胶液中,溶解多层PCB上孔壁内的树脂以及胶渣;
S4、除油:使用碱性清洗剂,碱性清洗剂会溶解油渍以及氧化膜,将经过除胶后的4号多层PCB放入碱性清洗剂中,碱性清洗剂洗去4号多层PCB表面的油渍以及氧化膜,使多层PCB表面更加洁净;
S5、微蚀处理:配置微蚀液,微蚀液包括过硫酸钠溶液和浓硫酸,过硫酸钠溶液的浓度为60g/L,微蚀液中硫酸钠溶液和浓硫酸的体积比为9:1,4号多层PCB在微蚀液中浸泡的时间为1min,去除4号多层PCB表面的杂质,粗化铜表面;
S6、活化处理:配置活化液,具体是先将氯化钯溶于浓盐酸中,然后再依次加入去离子水和聚乙烯吡咯烷酮,通过磁力搅拌使其充分溶解,再将搅拌好的溶液加热至60℃,逐滴加入0.20mol/L的葡萄糖溶液,在葡萄糖溶液加入完成后,静置保温5h后,自然冷却至室温,将冷却后的溶液使用高速离心机以9000r/min离心分离10min,形成离心液,先使用无水乙醇洗涤离心液3次-5次,再使用去离子水洗涤离心液3次-5次,最后将离心液稀释至25mg/L,形成活化液,将经过微蚀处理的4号多层PCB放入活化液中,活化液的温度为40℃,4号多层PCB在活化液中浸泡的时间为10min,使胶体钯微粒吸附到多层PCB的板面和孔壁上;
S7、加速处理:将4号多层PCB放入加速剂内,加速剂为氟硼酸,氟硼酸的温度为40℃,4号多层PCB在氟硼酸中浸泡的时间为3min,剥去胶体钯微粒外层的Sn+4外壳,露出钯核;
S8、化学镀铜处理:将经过S7处理后的4号多层PCB放入硫酸铜溶液中,使孔壁表面沉上一层铜,检测4号多层PCB上孔壁的背光度,沉铜的起镀时间以及沉积厚度。
实施例5:
如图3所述,5号多层PCB采用该加工方法,对多层PCB上的小孔壁进行沉铜处理,沉铜处理完成后,检测5号多层PCB上孔壁的背光度,沉铜的起镀时间以及沉积厚度。
根据实施例1至实施例5加工完成的多层PCB,得出下表数据:
背光度(FR-4) | 沉铜起镀时间(S) | 沉积厚度(um) | |
1号多层PCB | 9.0 | 12 | 0.34 |
2号多层PCB | 9.5 | 11 | 0.35 |
3号多层PCB | 10.0 | 13 | 0.44 |
4号多层PCB | 9.5 | 11 | 0.37 |
5号多层PCB | 7.0 | 21 | 0.32 |
综上所述,通过本发明的沉铜工艺加工多层PCB,可以保证多层PCB上小孔壁的背光超过9级,同时也缩短了沉铜起镀时间,在大批量生产多层PCB时,可以提高沉铜工艺的工作效率,活化液中的氯化钯采用聚乙烯吡咯烷酮作为分散剂,提高了活化液的分散性,应用于沉铜时不需要解胶,简化了沉铜工艺,葡萄糖溶液作为还原剂,可以自然分解,绿色环保。
以上对本发明的一个实施例进行了详细说明,但所述内容仅为本发明的较佳实施例,不能被认为用于限定本发明的实施范围。凡依本发明申请范围所作的均等变化与改进等,均应仍归属于本发明的专利涵盖范围之内。
Claims (8)
1.多层PCB沉铜工艺,其特征在于,包括以下步骤:
S1、等离子处理:将多层PCB放入等离子处理机中,进行等离子处理;
S2、超声处理:将经过等离子处理的多层PCB放入超声波处理器中进行超声处理;
S3、除胶:配置除胶液,将经过超声处理的多层PCB放入除胶液中,溶解多层PCB上孔壁内的树脂以及胶渣;
S4、除油:使用碱性清洗剂,将经过除胶后的多层PCB放入碱性清洗剂中,洗去多层PCB表面的油渍以及氧化膜;
S5、微蚀处理:配置微蚀液,去除多层PCB表面的杂质,粗化铜表面;
S6、活化处理:配置活化液,将经过微蚀处理的多层PCB放入活化液中,使胶体钯微粒吸附到多层PCB的板面和孔壁上;
S7、加速处理:将多层PCB放入加速剂内,剥去胶体钯微粒外层的Sn+4外壳,露出钯核;
S8、化学镀铜处理:将经过S7处理后的多层PCB放入硫酸铜溶液中,使孔壁表面沉上一层铜。
2.根据权利要求1所述的多层PCB沉铜工艺,其特征在于,所述步骤S3中除胶液包括高锰酸钾溶液和氢氧化钠溶液,所述除胶液的温度为60℃至80℃,多层PCB在除胶液中浸泡的时间为5min至10min。
3.根据权利要求1所述的多层PCB沉铜工艺,其特征在于,所述步骤S5中微蚀液包括过硫酸钠溶液和浓硫酸,多层PCB在微蚀液中浸泡的时间为1min至2min。
4.根据权利要求1所述的多层PCB沉铜工艺,其特征在于,所述S6中配置活化液包括以下步骤:
Y1:将氯化钯溶于浓盐酸中,然后再依次加入去离子水和聚乙烯吡咯烷酮,通过磁力搅拌使其充分溶解;
Y2:将Y1中搅拌好的溶液加热至60℃,然后逐滴加入葡萄糖溶液,葡萄糖溶液加入完成后,静置保温5h后,自然冷却至室温;
Y3:将Y2中冷却后的溶液使用高速离心机离心分离10min,形成离心液;
Y4:先使用无水乙醇洗涤离心液3次-5次,再使用去离子水洗涤离心液3次-5次,最后将离心液稀释至25mg/L,形成活化液。
5.根据权利要求4所述的多层PCB沉铜工艺,其特征在于,所述步骤Y2中葡萄糖溶液的浓度为0.20mol/L。
6.根据权利要求4所述的多层PCB沉铜工艺,其特征在于,所述步骤Y3中高速离心机的工作转速为6000r/min至10000r/min。
7.根据权利要求1所述的多层PCB沉铜工艺,其特征在于,所述步骤S6中活化液的温度为40℃-45℃,多层PCB在活化液中浸泡的时间为10min至20min。
8.根据权利要求1所述的多层PCB沉铜工艺,其特征在于,所述步骤S7中加速剂为氟硼酸,氟硼酸的温度为40℃,多层PCB在氟硼酸中浸泡的时间为3min至5min。
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