CN115398634A - 探测基板及其制造方法、平板探测器及其制造方法 - Google Patents

探测基板及其制造方法、平板探测器及其制造方法 Download PDF

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CN115398634A
CN115398634A CN202180000568.1A CN202180000568A CN115398634A CN 115398634 A CN115398634 A CN 115398634A CN 202180000568 A CN202180000568 A CN 202180000568A CN 115398634 A CN115398634 A CN 115398634A
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substrate
detection
controllable
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conductive
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赵斌
徐帅
许彬彬
侯学成
李金钰
张晔
车春城
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BOE Technology Group Co Ltd
Beijing BOE Sensor Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Sensor Technology Co Ltd
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies

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Abstract

本公开涉及光电探测技术领域，具体而言，涉及一种探测基板、探测基板的制造方法、平板探测器及平板探测器的制造方法。探测基板包括：基板(10)，包括探测区(D)、绑定区(C)、可控通断区(B)和切割区(A)；多个探测单元，设于所述基板(10)上，所述探测单元包括位于所述探测区(D)上的晶体管和光敏器件，所述晶体管包括栅极(21)、第一极(24)和第二极(25)；所述光敏器件与所述晶体管的第一极(24)或第二极(25)连接；多个导线(212)，设于所述基板(10)上，一端与多个所述探测单元中所述晶体管的栅极(21)一一对应连接，另一端延伸至所述绑定区(C)；导电环(210)，设于所述基板(10)的切割区(A)上；多个检测线(211)，设于所述基板(10)上，一端与所述导电环(210)连接，另一端与所述多个导线(212)一一对应连接，且穿过所述可控通断区(B)；其中，位于所述可控通断区(B)上的所述检测线(211)能够具有断开状态。本方案的探测基板能够降低静电由边缘引入的风险性，实现静电及时疏导以避免损伤器件。

Description

PCT国内申请，说明书已公开。

Claims (19)

  1. PCT国内申请，权利要求书已公开。
CN202180000568.1A 2021-03-24 2021-03-24 探测基板及其制造方法、平板探测器及其制造方法 Pending CN115398634A (zh)

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Publication number Priority date Publication date Assignee Title
US7605004B2 (en) * 2001-07-18 2009-10-20 Relia Diagnostic Systems Llc Test strip for a lateral flow assay for a sample containing whole cells
CN105632958B (zh) * 2015-12-31 2019-01-04 京东方科技集团股份有限公司 阵列基板母板、阵列基板及其制作方法和显示装置
CN108565278A (zh) * 2018-02-28 2018-09-21 京东方科技集团股份有限公司 阵列基板母板、阵列基板、显示装置及其制作方法
CN109521584A (zh) * 2018-11-16 2019-03-26 合肥京东方显示技术有限公司 一种显示母板、阵列基板及其制备方法和显示面板
CN110890410B (zh) * 2019-11-29 2022-08-09 京东方科技集团股份有限公司 阵列基板、显示面板和显示装置
CN110910804B (zh) * 2019-12-26 2022-08-12 厦门天马微电子有限公司 一种显示面板及显示装置
CN111211113B (zh) * 2020-01-13 2022-04-15 京东方科技集团股份有限公司 显示基板及其制作方法、检测方法、显示装置
CN111900174A (zh) * 2020-07-27 2020-11-06 滁州惠科光电科技有限公司 阵列基板及其制作方法、显示装置

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