CN115397612B - 工件的化学机械研磨系统、演算系统、及化学机械研磨的模拟模型的制作方法 - Google Patents

工件的化学机械研磨系统、演算系统、及化学机械研磨的模拟模型的制作方法 Download PDF

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Publication number
CN115397612B
CN115397612B CN202180022839.3A CN202180022839A CN115397612B CN 115397612 B CN115397612 B CN 115397612B CN 202180022839 A CN202180022839 A CN 202180022839A CN 115397612 B CN115397612 B CN 115397612B
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China
Prior art keywords
polishing
model
workpiece
estimated
torque
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CN202180022839.3A
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English (en)
Chinese (zh)
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CN115397612A (zh
Inventor
铃木教和
安田穗积
望月宣宏
桥本洋平
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National University Corp Donghai National University
Ebara Corp
Kanazawa University NUC
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National University Corp Donghai National University
Ebara Corp
Kanazawa University NUC
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
CN202180022839.3A 2020-03-24 2021-03-10 工件的化学机械研磨系统、演算系统、及化学机械研磨的模拟模型的制作方法 Active CN115397612B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-052046 2020-03-24
JP2020052046A JP7465498B2 (ja) 2020-03-24 2020-03-24 ワークピースの化学機械研磨システム、演算システム、および化学機械研磨のシミュレーションモデルを作成する方法
PCT/JP2021/009516 WO2021193063A1 (ja) 2020-03-24 2021-03-10 ワークピースの化学機械研磨システム、演算システム、および化学機械研磨のシミュレーションモデルを作成する方法

Publications (2)

Publication Number Publication Date
CN115397612A CN115397612A (zh) 2022-11-25
CN115397612B true CN115397612B (zh) 2024-06-07

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US (1) US20230043639A1 (enExample)
JP (1) JP7465498B2 (enExample)
KR (1) KR102869537B1 (enExample)
CN (1) CN115397612B (enExample)
TW (1) TWI883149B (enExample)
WO (1) WO2021193063A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102624869B1 (ko) * 2021-10-05 2024-01-15 울산대학교 산학협력단 디지털 트윈을 기반으로 하는 양면 연삭 공정 제어 시스템 및 그 방법
JP2024067256A (ja) * 2022-11-04 2024-05-17 株式会社荏原製作所 研磨装置、情報処理装置及びプログラム
TWI817853B (zh) * 2022-11-29 2023-10-01 環球晶圓股份有限公司 晶圓研磨參數優化方法及電子裝置
CN115771102B (zh) * 2022-11-30 2024-02-27 大连理工大学 一种应用于双面研磨工艺的数字孪生系统
CN116967926A (zh) * 2023-09-11 2023-10-31 北京晶亦精微科技股份有限公司 基于修整器的扫描电机扭矩的抛光垫使用寿命监测方法
JP2025103220A (ja) 2023-12-27 2025-07-09 株式会社荏原製作所 ワークピースの化学機械研磨システムおよび化学機械研磨方法
CN119734161B (zh) * 2024-12-19 2025-11-21 华海清科股份有限公司 防护装置、晶圆磨削模块、减薄设备及方法、处理设备

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1674234A (zh) * 2004-03-04 2005-09-28 联晶半导体股份有限公司 化学机械研磨方法、化学机械研磨系统、半导体器件制造方法
JP2007281026A (ja) * 2006-04-03 2007-10-25 Renesas Technology Corp 半導体装置の研磨方法
JP2010087135A (ja) * 2008-09-30 2010-04-15 Nec Corp 半導体装置の製造方法およびcmp装置
JP2012056029A (ja) * 2010-09-09 2012-03-22 Ebara Corp 研磨装置
JP2012074574A (ja) * 2010-09-29 2012-04-12 Hitachi Ltd 加工装置制御システムおよび加工装置制御方法
JP2013118404A (ja) * 2002-03-14 2013-06-13 Nikon Corp 加工形状の予測方法、加工条件の決定方法、加工量予測方法、加工形状予測システム、加工条件決定システム、加工システム、加工形状予測計算機プログラム、加工条件決定計算機プログラム、プログラム記録媒体、及び半導体デバイスの製造方法
CN104002239A (zh) * 2013-02-22 2014-08-27 株式会社荏原制作所 砂轮修整器在研磨部件上的滑动距离分布的获得方法、滑动矢量分布的获得方法及研磨装置
CN104889879A (zh) * 2014-03-05 2015-09-09 株式会社荏原制作所 研磨装置以及研磨方法
JP2016124063A (ja) * 2014-12-26 2016-07-11 株式会社荏原製作所 研磨装置およびその制御方法
JP2018065212A (ja) * 2016-10-18 2018-04-26 株式会社荏原製作所 基板処理制御システム、基板処理制御方法、およびプログラム
CN110394726A (zh) * 2018-04-17 2019-11-01 创技股份有限公司 研磨装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6910947B2 (en) * 2001-06-19 2005-06-28 Applied Materials, Inc. Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life
DE10345381B4 (de) * 2003-09-30 2013-04-11 Advanced Micro Devices, Inc. Verfahren und System zum Steuern des chemisch-mechanischen Polierens unter Anwendung eines Sensorsignals eines Kissenkonditionierers
WO2008072300A1 (ja) * 2006-12-11 2008-06-19 Renesas Technology Corp. 半導体装置の製造方法、およびウェハの研磨方法
JP2011148036A (ja) * 2010-01-21 2011-08-04 Nec Corp データ処理装置、研磨装置、研磨レートの推定方法およびプログラム
CN102390036B (zh) * 2011-10-28 2014-04-02 中国科学院微电子研究所 基于浅沟道隔离技术的化学机械研磨终点检测方法及系统
WO2018074091A1 (ja) * 2016-10-18 2018-04-26 株式会社 荏原製作所 基板処理制御システム、基板処理制御方法、およびプログラム
US10795346B2 (en) * 2018-03-13 2020-10-06 Applied Materials, Inc. Machine learning systems for monitoring of semiconductor processing

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013118404A (ja) * 2002-03-14 2013-06-13 Nikon Corp 加工形状の予測方法、加工条件の決定方法、加工量予測方法、加工形状予測システム、加工条件決定システム、加工システム、加工形状予測計算機プログラム、加工条件決定計算機プログラム、プログラム記録媒体、及び半導体デバイスの製造方法
CN1674234A (zh) * 2004-03-04 2005-09-28 联晶半导体股份有限公司 化学机械研磨方法、化学机械研磨系统、半导体器件制造方法
JP2007281026A (ja) * 2006-04-03 2007-10-25 Renesas Technology Corp 半導体装置の研磨方法
JP2010087135A (ja) * 2008-09-30 2010-04-15 Nec Corp 半導体装置の製造方法およびcmp装置
JP2012056029A (ja) * 2010-09-09 2012-03-22 Ebara Corp 研磨装置
JP2012074574A (ja) * 2010-09-29 2012-04-12 Hitachi Ltd 加工装置制御システムおよび加工装置制御方法
CN104002239A (zh) * 2013-02-22 2014-08-27 株式会社荏原制作所 砂轮修整器在研磨部件上的滑动距离分布的获得方法、滑动矢量分布的获得方法及研磨装置
CN104889879A (zh) * 2014-03-05 2015-09-09 株式会社荏原制作所 研磨装置以及研磨方法
JP2016124063A (ja) * 2014-12-26 2016-07-11 株式会社荏原製作所 研磨装置およびその制御方法
JP2018065212A (ja) * 2016-10-18 2018-04-26 株式会社荏原製作所 基板処理制御システム、基板処理制御方法、およびプログラム
CN110394726A (zh) * 2018-04-17 2019-11-01 创技股份有限公司 研磨装置

Also Published As

Publication number Publication date
KR20220155340A (ko) 2022-11-22
US20230043639A1 (en) 2023-02-09
JP7465498B2 (ja) 2024-04-11
CN115397612A (zh) 2022-11-25
JP2021146493A (ja) 2021-09-27
WO2021193063A1 (ja) 2021-09-30
KR102869537B1 (ko) 2025-10-13
TWI883149B (zh) 2025-05-11
TW202140197A (zh) 2021-11-01

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