CN115335997B - 成像装置和电子设备 - Google Patents

成像装置和电子设备 Download PDF

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Publication number
CN115335997B
CN115335997B CN202180022953.6A CN202180022953A CN115335997B CN 115335997 B CN115335997 B CN 115335997B CN 202180022953 A CN202180022953 A CN 202180022953A CN 115335997 B CN115335997 B CN 115335997B
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China
Prior art keywords
imaging element
imaging
light receiving
partition wall
receiving surface
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CN202180022953.6A
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English (en)
Chinese (zh)
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CN115335997A (zh
Inventor
中沟正彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B17/00—Details of cameras or camera bodies; Accessories therefor
    • G03B17/02—Bodies
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/41—Extracting pixel data from a plurality of image sensors simultaneously picking up an image, e.g. for increasing the field of view by combining the outputs of a plurality of sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202180022953.6A 2020-03-27 2021-03-16 成像装置和电子设备 Active CN115335997B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-059006 2020-03-27
JP2020059006 2020-03-27
PCT/JP2021/010674 WO2021193254A1 (ja) 2020-03-27 2021-03-16 撮像装置及び電子機器

Publications (2)

Publication Number Publication Date
CN115335997A CN115335997A (zh) 2022-11-11
CN115335997B true CN115335997B (zh) 2025-07-11

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CN202180022953.6A Active CN115335997B (zh) 2020-03-27 2021-03-16 成像装置和电子设备

Country Status (5)

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US (1) US20230232125A1 (https=)
JP (1) JP7620005B2 (https=)
CN (1) CN115335997B (https=)
DE (1) DE112021001902T5 (https=)
WO (1) WO2021193254A1 (https=)

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KR20220073033A (ko) * 2020-11-26 2022-06-03 삼성전자주식회사 이미지 센서 및 이미지 센싱 시스템
KR102899037B1 (ko) * 2021-01-04 2025-12-11 삼성전자주식회사 이미지 센서
KR20230130951A (ko) * 2022-03-04 2023-09-12 삼성전자주식회사 이미지 센서
WO2023234069A1 (ja) * 2022-05-30 2023-12-07 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
WO2023243237A1 (ja) * 2022-06-15 2023-12-21 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
JP2024014424A (ja) * 2022-07-22 2024-02-01 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP2024041483A (ja) * 2022-09-14 2024-03-27 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光検出装置の製造方法、及び電子機器
JP2025024416A (ja) * 2023-08-07 2025-02-20 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

Citations (2)

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CN105720066A (zh) * 2011-03-14 2016-06-29 索尼公司 固态成像装置、固态成像装置的制造方法和电子设备
CN110313067A (zh) * 2017-03-06 2019-10-08 索尼半导体解决方案公司 固态摄像装置和固态摄像装置的制造方法

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JP4386084B2 (ja) * 2007-03-06 2009-12-16 エプソンイメージングデバイス株式会社 液晶装置及び電子機器
JP5371339B2 (ja) * 2008-09-11 2013-12-18 富士フイルム株式会社 固体撮像素子及び撮像装置
JP4872024B1 (ja) * 2011-04-22 2012-02-08 パナソニック株式会社 固体撮像装置およびその製造方法
JP2015216186A (ja) 2014-05-09 2015-12-03 ソニー株式会社 固体撮像装置および電子機器
JP2016031993A (ja) * 2014-07-28 2016-03-07 キヤノン株式会社 固体撮像装置及びカメラ
WO2017104438A1 (ja) * 2015-12-16 2017-06-22 ソニー株式会社 撮像素子および駆動方法、並びに電子機器
TWI875555B (zh) 2016-01-27 2025-03-01 日商新力股份有限公司 固體攝像元件
JP6738200B2 (ja) * 2016-05-26 2020-08-12 キヤノン株式会社 撮像装置
JP2018029170A (ja) * 2016-08-10 2018-02-22 キヤノン株式会社 撮像装置およびその製造方法ならびにカメラ
JP7316764B2 (ja) 2017-05-29 2023-07-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
JP2019033195A (ja) * 2017-08-09 2019-02-28 キヤノン株式会社 撮像装置の製造方法
JP2019165136A (ja) * 2018-03-20 2019-09-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2018142739A (ja) 2018-06-06 2018-09-13 キヤノン株式会社 光電変換装置
TWI910139B (zh) * 2020-03-27 2026-01-01 日商索尼半導體解決方案公司 攝像裝置及電子機器
KR102904474B1 (ko) * 2020-10-05 2025-12-24 삼성전자 주식회사 이미지 센서 및 이를 포함하는 전자 시스템
US20250228020A1 (en) * 2022-04-28 2025-07-10 Sony Semiconductor Solutions Corporation Photodetector and electronic apparatus
KR20250068921A (ko) * 2023-11-10 2025-05-19 삼성전자주식회사 이미지 센서
KR20250102932A (ko) * 2023-12-28 2025-07-07 삼성전자주식회사 이미지 센서

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105720066A (zh) * 2011-03-14 2016-06-29 索尼公司 固态成像装置、固态成像装置的制造方法和电子设备
CN110313067A (zh) * 2017-03-06 2019-10-08 索尼半导体解决方案公司 固态摄像装置和固态摄像装置的制造方法

Also Published As

Publication number Publication date
DE112021001902T5 (de) 2023-02-23
JP7620005B2 (ja) 2025-01-22
JPWO2021193254A1 (https=) 2021-09-30
US20230232125A1 (en) 2023-07-20
WO2021193254A1 (ja) 2021-09-30
CN115335997A (zh) 2022-11-11

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