WO2021193254A1 - 撮像装置及び電子機器 - Google Patents

撮像装置及び電子機器 Download PDF

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Publication number
WO2021193254A1
WO2021193254A1 PCT/JP2021/010674 JP2021010674W WO2021193254A1 WO 2021193254 A1 WO2021193254 A1 WO 2021193254A1 JP 2021010674 W JP2021010674 W JP 2021010674W WO 2021193254 A1 WO2021193254 A1 WO 2021193254A1
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Prior art keywords
image sensor
separation wall
light receiving
receiving surface
semiconductor substrate
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Ceased
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PCT/JP2021/010674
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English (en)
French (fr)
Japanese (ja)
Inventor
正彦 中溝
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to CN202180022953.6A priority Critical patent/CN115335997B/zh
Priority to JP2022509989A priority patent/JP7620005B2/ja
Priority to DE112021001902.3T priority patent/DE112021001902T5/de
Priority to US17/910,272 priority patent/US20230232125A1/en
Publication of WO2021193254A1 publication Critical patent/WO2021193254A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B17/00—Details of cameras or camera bodies; Accessories therefor
    • G03B17/02—Bodies
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/41—Extracting pixel data from a plurality of image sensors simultaneously picking up an image, e.g. for increasing the field of view by combining the outputs of a plurality of sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Definitions

  • This disclosure relates to an imaging device and an electronic device.
  • JP-A-2018-201015 Japanese Unexamined Patent Publication No. 2017-212351 Japanese Unexamined Patent Publication No. 2015-216186
  • an image pickup device including first and second image pickup elements that convert light into charges, respectively, each of the first and second image pickup elements is provided in a semiconductor substrate and is provided with each other.
  • a plurality of adjacent pixels, a pixel separation wall for separating the plurality of adjacent pixels, and a pixel separation wall provided above the light receiving surface of the semiconductor substrate are provided, and the first image sensor and the second image sensor are different from each other.
  • the pixel separation wall of the first image sensor which has a color filter that transmits light having a wavelength, has a slit in the center of the first image sensor when viewed from the light receiving surface side.
  • an image pickup apparatus in which the pixel separation wall of the second image sensor does not have a slit at the center of the second image sensor when viewed from the light receiving surface side.
  • an electronic device including an image pickup device including first and second image pickup elements that convert light into charges, and each of the first and second image pickup elements is in a semiconductor substrate.
  • the element has a color filter that transmits light having different wavelengths from each other, and the pixel separation wall of the first image sensor is the center of the first image sensor when viewed from the light receiving surface side.
  • an electronic device having a slit in the center of the second image sensor and having no slit at the center of the second image sensor when viewed from the light receiving surface side.
  • a plurality of components having substantially the same or similar functional configurations may be distinguished by adding different numbers after the same reference numerals. However, if it is not necessary to distinguish each of the plurality of components having substantially the same or similar functional configurations, only the same reference numerals are given. Further, similar components of different embodiments may be distinguished by adding different alphabets after the same reference numerals. However, if it is not necessary to distinguish each of the similar components, only the same reference numerals are given.
  • the drawings referred to in the following description are drawings for explaining one embodiment of the present disclosure and promoting its understanding, and for the sake of clarity, the shapes, dimensions, ratios, etc. shown in the drawings are actually shown. May differ from.
  • the image pickup apparatus shown in the drawing can be appropriately redesigned in consideration of the following description and known techniques.
  • the vertical direction of the laminated structure of the image pickup device corresponds to the relative direction when the light receiving surface on which the light incident on the image pickup device enters is facing up. It may differ from the vertical direction according to the actual gravitational acceleration.
  • the dimensions expressed in the following description not only mean the dimensions defined mathematically or geometrically, but also the degree of difference (error / strain) that is allowed in the operation of the image pickup device and the manufacturing process of the image pickup device. ) Is also included. Furthermore, the term "substantially identical" used for specific dimensions in the following description does not mean only when they are mathematically or geometrically perfectly matched, but also the operation of the imaging device and imaging. It shall be included that there is an allowable difference (error / strain) in the manufacturing process of the device.
  • electrically connecting means connecting a plurality of elements directly or indirectly via other elements.
  • sharing means using one other element (for example, an on-chip lens) together between elements different from each other (for example, a pixel or the like).
  • FIG. 1 is an explanatory diagram showing a plan configuration example of the image pickup apparatus 1 according to the embodiment of the present disclosure.
  • the image pickup apparatus 1 according to the embodiment of the present disclosure is a pixel array section (light receiving section) 30 in which a plurality of image pickup elements 100 are arranged in a matric manner on a semiconductor substrate 10 made of silicon, for example. And a peripheral circuit unit provided so as to surround the pixel array unit 30.
  • the image pickup apparatus 1 includes a vertical drive circuit unit 32, a column signal processing circuit unit 34, a horizontal drive circuit unit 36, an output circuit unit 38, a control circuit unit 40, and the like as the peripheral circuit unit. The details of each block of the image pickup apparatus 1 will be described below.
  • the pixel array unit 30 has a plurality of image pickup elements 100 arranged two-dimensionally on the semiconductor substrate 10 in a matrix along the row direction and the column direction.
  • Each image sensor 100 has a photoelectric conversion unit (not shown) and a plurality of pixel transistors (for example, MOS (Metal-Oxide-Semiconductor) transistors) (not shown).
  • the pixel transistor includes, for example, four MOS transistors: a transfer transistor, a selection transistor, a reset transistor, and an amplification transistor.
  • a plurality of image pickup devices 100 are arranged two-dimensionally by, for example, a Bayer array.
  • image pickup devices 100 that absorb light having a green wavelength (for example, a wavelength of 495 nm to 570 nm) and generate a charge are arranged in a checkered pattern, and the remaining portion has a red wavelength (for example, a wavelength of 620 nm).
  • the image sensor 100 that absorbs light having a wavelength of up to 750 nm and generates a charge, and the image sensor 100 that absorbs light having a blue wavelength (for example, a wavelength of 450 nm to 495 nm) and generates a charge are alternately arranged in a row. It is an array pattern that is lined up. The detailed structure of the image sensor 100 will be described later.
  • the vertical drive circuit unit 32 is formed by, for example, a shift register, selects the pixel drive wiring 42, supplies a pulse for driving the image pickup element 100 to the selected pixel drive wiring 42, and causes the image pickup element 100 in a row unit. Drive. That is, the vertical drive circuit unit 32 selectively scans each image sensor 100 of the pixel array unit 30 in the vertical direction (vertical direction in FIG. 1) in a row-by-row manner, and the photoelectric conversion unit (not shown) of each image sensor 100 (not shown). A pixel signal based on the signal charge generated according to the amount of received light is supplied to the column signal processing circuit unit 34 described later through the vertical signal line 44.
  • the column signal processing circuit unit 34 is arranged for each column of the image sensor 100, and performs signal processing such as noise removal for each pixel signal output from the image sensor 100 for one row.
  • the column signal processing circuit unit 34 performs signal processing such as CDS (Correlated Double Sampling: Correlation Double Sampling) and AD (Analog-Digital) conversion in order to remove fixed pattern noise peculiar to pixels.
  • CDS Correlated Double Sampling: Correlation Double Sampling
  • AD Analog-Digital
  • the horizontal drive circuit unit 36 is formed by, for example, a shift register, and by sequentially outputting horizontal scanning pulses, each of the column signal processing circuit units 34 described above is sequentially selected, and pixels from each of the column signal processing circuit units 34. The signal is output to the horizontal signal line 46.
  • the output circuit unit 38 performs signal processing on the pixel signals sequentially supplied from each of the column signal processing circuit units 34 described above through the horizontal signal line 46 and outputs the signals.
  • the output circuit unit 38 may function as, for example, a functional unit that performs buffering, or may perform processing such as black level adjustment, column variation correction, and various digital signal processing. Note that buffering refers to temporarily storing pixel signals in order to compensate for differences in processing speed and transfer speed when exchanging pixel signals.
  • the input / output terminal 48 is a terminal for exchanging signals with an external device.
  • Control circuit unit 40 receives an input clock and data for instructing an operation mode and the like, and outputs data such as internal information of the image pickup apparatus 1. That is, the control circuit unit 40 is based on the vertical synchronization signal, the horizontal synchronization signal, and the master clock, and is a clock signal that serves as a reference for the operation of the vertical drive circuit unit 32, the column signal processing circuit unit 34, the horizontal drive circuit unit 36, and the like. Generate a control signal. Then, the control circuit unit 40 outputs the generated clock signal and control signal to the vertical drive circuit unit 32, the column signal processing circuit unit 34, the horizontal drive circuit unit 36, and the like.
  • FIG. 2 is an explanatory view showing a part of a cross section of the image pickup device 100a according to the comparative example, and more specifically, corresponds to a cross section of the image pickup device 100a cut along the thickness direction of the semiconductor substrate 10.
  • the comparative example means an image pickup device that has been studied repeatedly by the present inventor before the embodiment of the present disclosure.
  • the plurality of image pickup devices 100a according to the comparative example are provided on the semiconductor substrate 10 so as to be adjacent to each other.
  • the image pickup device 100a includes an on-chip lens 200, a color filter 202, a light-shielding portion 204, a semiconductor substrate 10, and transfer gates 400a and 400b.
  • the image sensor 100a includes pixels 300a and 300b provided in the semiconductor substrate 10 having photoelectric conversion units 302, a pixel separation wall 304 for separating these pixels 300a and 300b, and two pixels 300a and 300b. Includes an element separation wall 310 that surrounds and.
  • the laminated structure of the image pickup device 100a according to the comparative example will be described below, but in the following description, it will be described in the order from the upper side (light receiving surface 10a side) to the lower side in FIG.
  • the image sensor 100a is provided above the light receiving surface 10a of the semiconductor substrate 10, and has one on-chip lens 200 that collects the incident light on the photoelectric conversion unit 302 described later.
  • the color filter 202 is either a color filter that transmits a red wavelength component, a color filter that transmits a green wavelength component, or a color filter that transmits a blue wavelength component.
  • a light-shielding portion 204 is provided on the light-receiving surface 10a of the semiconductor substrate 10 so as to surround the color filter 202.
  • the light-shielding portion 204 is provided between the adjacent image pickup elements 100a to block light between the adjacent image pickup elements 100a.
  • two photoelectric conversion units 302 having the first conductive type (for example, N type) impurities are provided for each of the pixels 300a and 300b.
  • the photoelectric conversion unit 302 absorbs light having a red wavelength component, a green wavelength component, or a blue wavelength component incident through the color filter 202 to generate an electric charge.
  • the photoelectric conversion unit 302 of the pixel 300a and the photoelectric conversion unit 302 of the pixel 300b each function as two phase difference detection pixels at the time of phase difference detection.
  • the photoelectric conversion unit 302 changes the amount of charge generated, that is, the sensitivity, depending on the incident angle of light with respect to its own optical axis (axis perpendicular to the light receiving surface). For example, the photoelectric conversion unit 302 has the highest sensitivity when the incident angle is 0 degrees, and the sensitivity of the photoelectric conversion unit 302 is the target axis when the incident angle is 0 degrees with respect to the incident angle. It has a line-symmetrical relationship. Therefore, in the photoelectric conversion unit 302 of the pixel 300a and the photoelectric conversion unit 302 of the pixel 300b, light from the same point is incident at different angles of incidence, and an amount of electric charge corresponding to the angle of incidence is generated.
  • phase difference can be detected by detecting the difference in the pixel signal based on the amount of electric charge generated by the photoelectric conversion unit 302 of the pixel 300a and the photoelectric conversion unit 302 of the pixel 300b. Therefore, such a difference in pixel signals (phase difference) is detected as a difference signal by, for example, a detection unit (not shown) of the output circuit unit 38, and the defocus amount is calculated based on the detected phase difference. Autofocus can be achieved by adjusting (moving) the imaging lens (not shown).
  • the pixels 300a and 300b having the photoelectric conversion unit 302 are physically separated by the pixel separation wall 304.
  • the pixel separation wall 304 is made of RDTI (Real Deep Trench Isolation).
  • the RDTI forms a trench that penetrates halfway through the semiconductor substrate 10 from the light receiving surface 10a (back surface) side of the semiconductor substrate 10 along the thickness direction of the semiconductor substrate 10, and from an oxide film or a metal film in the trench. It is formed by embedding a material.
  • the image sensor 100a when the pixel signals output by the two pixels 300a and 300b (specifically, the photoelectric conversion unit 302) are mixed with each other at the time of phase difference detection and color mixing occurs, the phase difference is detected. The accuracy of is deteriorated. Therefore, in the image sensor 100a, in order to further improve the accuracy of phase difference detection with respect to the pixel separation wall 304, it is required to separate the two pixels 300a and 300b so as not to cause color mixing. It will be.
  • the photoelectric conversion unit 302 of the pixel 300a and the photoelectric conversion unit 302 of the pixel 300b function as the photoelectric conversion unit 302 of one imaging element 100a during normal imaging. do.
  • an element separation wall 310 is provided which surrounds the two pixels 300a and 300b of the image pickup element 100a and physically separates the adjacent image pickup elements 100a from each other.
  • the element separation wall 310 is made of, for example, RDTI.
  • the electric charges generated by the photoelectric conversion unit 302 of the pixel 300a and the photoelectric conversion unit 302 of the pixel 300b are transferred to the transfer gate 400a provided on the surface 10b located on the side opposite to the light receiving surface 10a of the semiconductor substrate 10. It will be transferred via 400b. Then, the charge is accumulated in, for example, a floating diffusion portion (charge storage portion) (not shown) provided in a semiconductor region having a first conductive type (for example, N type) provided in the semiconductor substrate 10. May be good. Further, a plurality of pixel transistors (not shown) for transferring charges and reading the charges as pixel signals may be provided on the surface 10b of the semiconductor substrate 10.
  • FIG. 3 is an explanatory view showing a planar configuration of the image pickup device 100a according to the comparative example, and more specifically corresponds to a cross section obtained by cutting the image pickup device 100a along the AA'line shown in FIG.
  • the outputs of the two pixels 300a and 300b at the time of the phase difference detection are output. It is required to prevent mixing.
  • Patent Document 1 As shown in FIG. 3, between the two pixels 300a and 300b of each image sensor 100a, the element separation wall 310 is directed toward the center of the image sensor 100 in the column direction.
  • the electric charge generated in the photoelectric conversion unit 302 of one of the two pixels 300a and 300b during phase difference detection is the other. Since it can be prevented from flowing into the pixels, it is possible to avoid mixing the outputs.
  • the accuracy of phase difference detection is improved, and the occurrence of point defects on the captured image due to the variation in charge inflow can be suppressed.
  • Patent Document 2 two separation portions serving as potential barriers having different potentials with respect to the electric charges generated in the photoelectric conversion unit are provided between the two pixels of each image sensor. There is. According to the above-mentioned Patent Document 2, by providing such a separation portion, it is possible to avoid mixing the outputs of the two pixels at the time of phase difference detection, so that the accuracy of phase difference detection is improved.
  • Patent Document 3 an insulating layer (not shown) embedded in the substrate is provided between the two pixels of each image sensor. According to Patent Document 3, by providing such an insulating layer, it is possible to avoid mixing the outputs of the two pixels during phase difference detection, so that the accuracy of phase difference detection is improved.
  • the present inventor can focus on the characteristics of the light incident on the image pickup device 100, improve the accuracy of phase difference detection, and avoid deterioration of the captured image. It has led to the creation of an embodiment relating to disclosure.
  • green light has a short wavelength, so when such light is incident on the image sensor, it is absorbed by the photoelectric conversion section near the surface of the semiconductor substrate. Will be done. Therefore, even if a pixel separation wall is provided between the two pixels, it is considered that the light is less likely to be diffusely reflected by the pixel separation wall and crosstalk is less likely to occur.
  • red light since red light has a long wavelength, when such light is incident on the image sensor, it is difficult to be absorbed by the photoelectric conversion unit near the surface of the semiconductor substrate.
  • the image pickup device (first image pickup device) 100 that absorbs light having a red wavelength component and generates a charge
  • the light receiving surface 10a When the image sensor 100 is viewed from the side, a slit 312 is provided near the center of the image sensor 100 on the pixel separation wall 304 that separates the two pixels 300a and 300b (see FIG. 4).
  • a slit 312 is provided near the center of the image sensor 100 in this way, it is possible to prevent the light incident near the center of the image sensor 100 from being diffusely reflected by the pixel separation wall 304 and incident on the adjacent image sensor 100. ..
  • crosstalk can be avoided, and thus deterioration of the captured image can be suppressed.
  • the image sensor (second image sensor) 100 that absorbs light having a green wavelength component and generates a charge is as described above. Since it is considered that diffused reflection is unlikely to occur, when the image sensor 100 is viewed from the light receiving surface 10a side, the pixel separation wall 304 that separates the two pixels 300a and 300b is not provided with the slit 312 (see FIG. 4). ..
  • the pixel separation wall 304 which is not provided with the slit 312, can prevent the electric charge generated in the photoelectric conversion unit 302 of one of the two pixels 300a and 300b from flowing into the other pixel.
  • the separation ratio of the pixels 300a and 300b can be improved. Therefore, in the embodiment of the present disclosure, the accuracy of phase difference detection can be improved, and the occurrence of point defects on the captured image due to the variation in charge inflow can be suppressed.
  • FIG. 4 is an explanatory diagram showing a configuration example of the image sensor 100 according to the present embodiment. Specifically, in the upper part of FIG. 4, the image sensor 100 is cut along the AA line shown in FIG. The figure shown in the lower part of FIG. 4 corresponds to the cross section obtained by cutting the image sensor 100 along the BB'line shown in the upper part of FIG.
  • the two rectangular pixels 300a and 300b adjacent to each other of one image sensor 100 are pixels formed integrally with the element separation wall 310. It is separated by a separation wall 304. Further, in the present embodiment, in the image sensor (first image sensor, third image sensor) 100 that absorbs light having a red wavelength component and a blue wavelength component to generate a charge, the light receiving surface When the image sensor 100 is viewed from the 10a side, a slit 312 is provided near the center of the image sensor 100 on the pixel separation wall 304.
  • the element separation wall 310 of the image sensor 100 that absorbs red and blue light projects along the column direction toward the center of the image sensor 100 when the image sensor 100 is viewed from above the light receiving surface 10a.
  • the length of the slit 312 along the vertical direction in FIG. 4 is not particularly limited.
  • the position of the slit 312 is not limited to being the center of the image sensor 100, and may be deviated from the center of the image sensor 100 by a predetermined distance, for example.
  • a slit 312 is provided near the center of the image sensor 100.
  • crosstalk can be avoided, and eventually deterioration of the captured image can be suppressed.
  • the image sensor (second image sensor) 100 that absorbs light having a green wavelength component and generates an electric charge, when the image sensor 100 is viewed from the light receiving surface 10a side,
  • the pixel separation wall 304 is not provided with the slit 312.
  • the image sensor (second image sensor) 100 that absorbs light having a green wavelength component and generates a charge
  • two pixels are formed by a pixel separation wall 304 that is not provided with a slit 312. Since the charge generated in the photoelectric conversion unit 302 of one of the pixels 300a and 300b can be suppressed from flowing into the other pixel, the separation ratio of the pixels 300a and 300b can be improved.
  • the image sensor 100 that absorbs light having a green wavelength component the accuracy of phase difference detection is improved, and the occurrence of point defects on the captured image due to variations in charge inflow can be suppressed. ..
  • the image sensor 100 that mainly absorbs green light is used in the phase difference detection, it is preferable that the image sensor 100 improves the accuracy of the phase difference detection.
  • the pixel separation wall 304 having a form corresponding to the difference in light characteristics due to the difference in wavelength is provided for each image sensor 100, thereby improving the accuracy of phase difference detection and improving the accuracy of the captured image. Deterioration can be avoided.
  • an element separation wall 310 is provided which surrounds the two pixels 300a and 300b of each image sensor 100 and physically separates the adjacent image sensors 100 from each other. There is.
  • the widths of the element separation wall 310 and the pixel separation wall 304 are substantially the same, but are not limited to this in the present embodiment.
  • the image sensor 100 includes an on-chip lens 200, a color filter 202, a light-shielding portion (light-shielding film) 204, a semiconductor substrate 10, and the same as in the comparative example. It has transfer gates 400a and 400b. Further, in the present embodiment, the image pickup device 100 is provided with the pixels 300a and 300b having the photoelectric conversion unit 302 provided in the semiconductor substrate 10, the pixel separation wall 304 for separating the pixels 300a and 300b, and the image pickup.
  • the laminated structure of the image sensor 100 according to the present embodiment will be described below, but in the following description, the structure will be described in the order from the upper side (light receiving surface 10a side) to the lower side in the lower part of FIG. ..
  • the image sensor 100 is provided above the light receiving surface 10a of the semiconductor substrate 10 and has one on-chip lens 200 that collects the incident light on the photoelectric conversion unit 302. Similar to the comparative example, the image pickup device 100 has a structure in which two pixels 300a and 300b are provided for one on-chip lens 200. That is, the on-chip lens 200 is shared by the two pixels 300a and 300b.
  • the on-chip lens 200 may be formed of, for example, a silicon nitride film (SiN) or a resin-based material such as a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, or a siloxane resin. can.
  • the incident light collected by the on-chip lens 200 is photoelectric of the two pixels 300a and 300b via the color filter 202 provided below the on-chip lens 200 and above the light receiving surface 10a. It is incident on the conversion unit 302.
  • the color filter 202 is either a color filter that transmits a red wavelength component, a color filter that transmits a green wavelength component, or a color filter that transmits a blue wavelength component.
  • the color filter 202 can be formed from a material in which a pigment or dye is dispersed in a transparent binder such as silicone.
  • a light-shielding portion 204 is provided on the light-receiving surface 10a of the semiconductor substrate 10 so as to surround the color filter 202.
  • the light-shielding portion 204 can be formed of, for example, a metal material containing tungsten (W), aluminum (Al), copper (Cu), titanium (Ti), molybdenum (Mo), nickel (Ni), or the like.
  • the photoelectric conversion unit 302 absorbs light having a red wavelength component, a green wavelength component, or a blue wavelength component incident through the color filter 202 to generate an electric charge. do.
  • the photoelectric conversion unit 302 of the pixel 300a and the photoelectric conversion unit 302 of the pixel 300b function as a pair of phase difference detection pixels at the time of phase difference detection.
  • the phase difference can be detected by detecting the difference in the pixel signal based on the amount of electric charge generated by the photoelectric conversion unit 302 of the pixel 300a and the photoelectric conversion unit 302 of the pixel 300b.
  • the phase difference is detected as the difference between the pixel signals of the photoelectric conversion unit 302 of the pixel 300a and the photoelectric conversion unit 302 of the pixel 300b, but the present embodiment is limited to this.
  • the phase difference may be detected as the ratio of the pixel signals of the photoelectric conversion unit 302 of the pixel 300a and the photoelectric conversion unit 302 of the pixel 300b.
  • the two rectangular pixels 300a and 300b are provided so as to penetrate from the light receiving surface 10a to the middle of the semiconductor substrate 10 along the thickness direction of the semiconductor substrate 10. They are separated from each other by a pixel separation wall 304, which is an RDTI.
  • the RDTI has a groove (trench) (not shown) penetrating from the light receiving surface 10a (back surface) side of the semiconductor substrate 10 to the middle of the semiconductor substrate 10 along the thickness direction of the semiconductor substrate 10.
  • a material consisting of an oxide film such as silicon oxide film (SiO), silicon nitride film, amorphous silicon, polycrystalline silicon, titanium oxide film (TIO), aluminum, tungsten, or a metal film in the trench. It is formed.
  • an oxide film such as silicon oxide film (SiO), silicon nitride film, amorphous silicon, polycrystalline silicon, titanium oxide film (TIO), aluminum, tungsten, or a metal film in the trench. It is formed.
  • the semiconductor substrate 10 surrounds the two pixels 300a and 300b of the image pickup device 100 and physically separates the adjacent image pickup devices 100 from each other.
  • a wall 310 is provided.
  • the element separation wall 310 is an RDTI provided so as to penetrate from the light receiving surface 10a to the middle of the semiconductor substrate 10. That is, the element separation wall 310 includes a groove (trench) (not shown) that penetrates from the light receiving surface 10a (back surface) side of the semiconductor substrate 10 to the middle of the semiconductor substrate 10 along the thickness direction of the semiconductor substrate 10. It is made of a material composed of an oxide film such as silicon oxide film, silicon nitride film, amorphous silicon, polycrystalline silicon, titanium oxide film, aluminum, tungsten, or a metal film embedded in a trench.
  • an oxide film such as silicon oxide film, silicon nitride film, amorphous silicon, polycrystalline silicon, titanium oxide film, aluminum, tungsten, or a metal film embedded in a trench.
  • the depths of the pixel separation wall 304 and the element separation wall 310 from the light receiving surface 10a of the semiconductor substrate 10 are substantially the same, but are limited to this in the present embodiment. It is not something that is done.
  • the electric charges generated by the photoelectric conversion unit 302 of the pixel 300a and the photoelectric conversion unit 302 of the pixel 300b are provided on the surface 10b located on the side opposite to the light receiving surface 10a of the semiconductor substrate 10.
  • the transfer transistor (one of the pixel transistors described above) is transferred via the transfer gates 400a and 400b.
  • the transfer gates 400a and 400b can be formed from, for example, a metal film.
  • the charge is accumulated in, for example, a floating diffusion portion (charge storage portion) (not shown) provided in a semiconductor region having a first conductive type (for example, N type) provided in the semiconductor substrate 10. May be good.
  • the floating diffusion portion is not limited to being provided in the semiconductor substrate 10, and is provided, for example, on another substrate (not shown) laminated on the semiconductor substrate 10. It may have been.
  • a plurality of pixel transistors (not shown) other than the transfer transistor described above, which are used for reading the electric charge as a pixel signal or the like, may be provided.
  • the pixel transistor may be provided on the semiconductor substrate 10 or may be provided on another substrate (not shown) laminated on the semiconductor substrate 10.
  • the image sensor 100 that absorbs red and blue light, when the image sensor 100 is viewed from the light receiving surface 10a side.
  • a slit 312 is provided near the center of the image sensor 100 of the pixel separation wall 304 that separates the two pixels 300a and 300b.
  • the image sensor 100 since it is considered that the above-mentioned diffused reflection is unlikely to occur in the image sensor (second image sensor) 100 that absorbs green light, the image sensor 100 is viewed from the light receiving surface 10a side. When viewed, the pixel separation wall 304 that separates the two pixels 300a and 300b is not provided with the slit 312. By doing so, according to the present embodiment, in the image sensor 100 that absorbs light having a green wavelength component and generates an electric charge, photoelectric conversion of one of the two pixels 300a and 300b is performed. Since it is possible to suppress the charge generated in the unit 302 from flowing into the other pixel, the separation ratio of the pixels 300a and 300b can be improved.
  • the image sensor 100 that absorbs light having a green wavelength component the accuracy of phase difference detection is improved, and the occurrence of point defects on the captured image due to variations in charge inflow can be suppressed. ..
  • the image sensor 100 that mainly absorbs green light is used in the phase difference detection, it is preferable that the image sensor 100 improves the accuracy of the phase difference detection.
  • the pixel separation wall 304 having a form corresponding to the difference in light characteristics due to the difference in wavelength is provided for each image sensor 100, thereby improving the accuracy of phase difference detection and improving the accuracy of the captured image. Deterioration can be avoided.
  • FIGS. 5 to 7 are explanatory views showing a configuration example of a cross section of the image sensor 100 according to the modified example of the present embodiment, and in detail, the BB'line or the CC' line shown in FIG. Corresponds to the cross section of the image sensor 100 cut in.
  • the depth of the pixel separation wall 304 with respect to the light receiving surface 10a may be shallower than the depth of the element separation wall 310.
  • the width of the pixel separation wall 304 may be narrower than the width of the element separation wall 310.
  • the depth of the pixel separation wall 304 of the image sensor (first image sensor) 100 that absorbs red light with respect to the light receiving surface 10a absorbs green light. It may be deeper than the pixel separation wall 304 of the image sensor (second image sensor) 100. Further, in the second modification, the depth of the pixel separation wall 304 of the image sensor (third image sensor) 100 that absorbs blue light with respect to the light receiving surface 10a is the depth of the image sensor (third image sensor) that absorbs green light. It may be shallower than the pixel separation wall 304 of the image sensor) 100.
  • the depth of the region of the semiconductor substrate 10 that absorbs the light with respect to the light receiving surface 10a differs depending on the wavelength of the light. Specifically, light having a longer wavelength reaches a deeper region of the semiconductor substrate 10. Therefore, for light having a long wavelength, it is preferable to provide the pixel separation wall 304 deeply in order to suppress the occurrence of crosstalk as described above. However, the deeper the depth of the pixel separation wall 304, the more difficult it becomes to manufacture the image pickup device 100, and the higher the possibility of damaging the image pickup device 100 during manufacturing. Then, when the image sensor 100 is damaged, a dark current may be generated.
  • the occurrence of crosstalk is suppressed by increasing the depth of the pixel separation wall 304 with respect to the light receiving surface 10a. ing. Further, in this modification, in the image sensor 100 that absorbs blue light having a short wavelength, the depth of the pixel separation wall 304 with respect to the light receiving surface 10a is made shallow, so that the yield is lowered and dark current is generated. I'm holding it down.
  • the element separation wall 310 may be provided so as to penetrate the semiconductor substrate 10 from the light receiving surface (back surface) 10a to the surface 10b along the thickness direction of the semiconductor substrate 10.
  • the third modification by providing such an element separation wall 310, the electric charge generated by the image pickup device 100 (specifically, the photoelectric conversion unit 302) flows out to another adjacent image pickup device 100. Therefore, the amount of electric charge that can be stored in the image pickup device 100 can be increased.
  • FIG. 8 is an explanatory view showing a plan configuration example of the image pickup device 100 according to the present embodiment, and more specifically, corresponds to a cross section of the image pickup device 100 cut along the AA'line shown in FIG.
  • the pixel separation wall 304 Is not provided with a slit 312.
  • the electric charge generated in the photoelectric conversion unit 302 of one of the two pixels 300a and 300b is the other pixel. It is possible to suppress the inflow to the screen and improve the accuracy (separation ratio) of the phase difference detection.
  • FIG. 9 is an explanatory diagram showing a configuration example of the image sensor 100 according to the present embodiment. Specifically, in the upper part of FIG. 9, the image sensor 100 is cut along the AA line shown in FIG. The figure shown in the lower part of FIG. 9 corresponds to the cross section obtained by cutting the image sensor 100 along the DD'line shown in the upper part of FIG.
  • a plurality of image pickup elements 100 that absorb light of the same color are arranged in 2 ⁇ 2 along the row direction and the column direction. These four image pickup devices 100 are used as one array unit. Then, in the present embodiment, each array unit that absorbs red, green, and blue light is two-dimensionally arranged in a matrix on the semiconductor substrate 10.
  • the image sensor in the image sensor (first image sensor, third image sensor) 100 that absorbs red and blue light, the image sensor is imaged from the light receiving surface 10a side.
  • a slit 312 is provided near the center of the image sensor 100 on the pixel separation wall 304.
  • the pixels The separation wall 304 is not provided with a slit 312.
  • FIGS. 10 and 11 are explanatory views showing a configuration example of a cross section of the image sensor 100 according to the modified example of the present embodiment, and in detail, the image sensor 100 is cut along the DD'line shown in FIG. Corresponds to the cross section.
  • the depth of the pixel separation wall 304 with respect to the light receiving surface 10a may be shallower than the depth of the element separation wall 310.
  • the first modification by setting the depth of the pixel separation wall 304 as described above, the light incident on the vicinity of the center of the image sensor 100 is diffusely reflected by the pixel separation wall 304 and incident on the adjacent image sensor 100. Since it is possible to suppress the cross-talk, it is possible to suppress the deterioration of the captured image.
  • the width of the pixel separation wall 304 may be narrower than the width of the element separation wall 310, or may be absorbed, as in the modified examples 1 and 2 of the first embodiment.
  • the depth of the pixel separation wall 304 with respect to the light receiving surface 10a may be changed according to the wavelength of the light to be emitted.
  • the element separation wall 310 may be provided so as to penetrate the semiconductor substrate 10 from the light receiving surface (back surface) 10a to the surface 10b along the thickness direction of the semiconductor substrate 10. According to the second modification, by providing such an element separation wall 310, it is possible to prevent the electric charge generated by the image sensor 100 from flowing out to another adjacent image sensor 100. Therefore, the image sensor 100 The amount of charge that can be stored inside can be increased.
  • FIG. 12 is an explanatory view showing a plan configuration example of the image pickup device 100 according to the present embodiment, and more specifically, corresponds to a cross section of the image pickup device 100 cut along the AA'line shown in FIG.
  • the pixel separation wall 304 Is not provided with a slit 312.
  • the electric charge generated in the photoelectric conversion unit 302 of one of the two pixels 300a and 300b is the other pixel. It is possible to suppress the inflow to the screen and improve the accuracy (separation ratio) of the phase difference detection.
  • FIG. 13 is an explanatory diagram showing a configuration example of the image sensor 100 according to the present embodiment. Specifically, in the upper part of FIG. 13, the image sensor 100 is cut along the AA line shown in FIG. The figure shown in the lower part of FIG. 13 corresponds to the cross section in which the image sensor 100 is cut along the EE'line shown in the upper part of FIG.
  • one image pickup device 100 has four pixels 300a to 300d divided into two along the row direction and the column direction by the pixel separation wall 304.
  • the phase difference in the column direction can be detected by individually reading out the amount of charge generated in the pixels 300 arranged along the column direction in the figure, and along the row direction in the figure.
  • the phase difference in the row direction can be detected by individually reading out the amount of electric charge generated by the arranged pixels 300.
  • the image sensor in the image sensor (first image sensor, third image sensor) 100 that absorbs red and blue light, the image sensor is imaged from the light receiving surface 10a side.
  • the slit 312 is provided near the center of the image sensor 100 of the pixel separation wall 304, that is, at the center of the four pixels 300a to 300d.
  • the pixels The slit 312 is not provided on the separation wall 304, that is, at the center of the four pixels 300a to 300d.
  • the broken line in the upper part of FIG. 13 indicates the on-chip lens 200, and in the present embodiment, one image sensor 100 has one on-chip lens 200.
  • the image sensor 100 is not limited to having four pixels 300a to d, and may have, for example, eight pixels 300, and is not particularly limited. No.
  • the width of the pixel separation wall 304 may be narrower than the width of the element separation wall 310, or may be absorbed, as in the first embodiment and the second modification.
  • the depth of the pixel separation wall 304 with respect to the light receiving surface 10a may be changed according to the wavelength of the light to be emitted.
  • FIG. 14 is an explanatory view showing a configuration example of a cross section of the image sensor 100 according to the modified example of the present embodiment. Specifically, FIG. 14 is a cross section obtained by cutting the image sensor 100 along the line EE shown in FIG. handle.
  • the element separation wall 310 may be provided so as to penetrate the semiconductor substrate 10 from the light receiving surface (back surface) 10a to the surface 10b along the thickness direction of the semiconductor substrate 10. According to this modification, by providing such an element separation wall 310, it is possible to prevent the electric charge generated by the image sensor 100 from flowing out to another adjacent image sensor 100. Therefore, the inside of the image sensor 100 The amount of charge that can be stored in the device can be increased.
  • FIG. 15 is an explanatory view showing a plan configuration example of the image sensor 100 according to the present embodiment, and more specifically, corresponds to a cross section of the image sensor 100 cut along the AA'line shown in FIG.
  • the pixel separation wall 304 Is not provided with a slit 312.
  • the electric charge generated in the photoelectric conversion unit 302 of one of the two pixels 300a and 300b is the other pixel. It is possible to suppress the inflow to the screen and improve the accuracy (separation ratio) of the phase difference detection.
  • FIG. 16 is an explanatory diagram showing a configuration example of the image pickup device 100 according to the seventh embodiment of the present disclosure.
  • the angle ⁇ of the incident angle of the light (indicated by the arrow in FIG. 16) incident on the pixel array unit (light receiving unit) 30 is close to 0 degrees in the central region of the pixel array unit 30. , It becomes larger as it gets closer to the outer circumference of the pixel array portion 30. Then, as the angle ⁇ of the incident angle becomes larger, light is more likely to be reflected by the surface (side surface) of the pixel separation wall 304 perpendicular to the light receiving surface 10a, and the possibility of crosstalk increases.
  • the pixels with respect to the light receiving surface 10a The depth of the separation wall 304 is made shallow. Further, in the present embodiment, the depth of the pixel separation wall 304 is increased in the image sensor 100 in the outer peripheral region of the pixel array unit 30, where crosstalk is likely to occur by the mechanism as described above. In other words, in the present embodiment, the depth of the pixel separation wall 304 with respect to the light receiving surface 10a in the image sensor 100 in the central region is shallower than the depth of the pixel separation wall 304 in the image sensor 100 in the outer peripheral region.
  • the cross talk caused by the reflection of light by the surface of the pixel separation wall 304 perpendicular to the light receiving surface 10a. Can be suppressed.
  • the yield is lowered and the dark current is reduced by making the depth of the pixel separation wall 304 shallow. Can be suppressed.
  • FIG. 17 is an explanatory diagram showing a configuration example of the image pickup device 100 according to the eighth embodiment of the present disclosure.
  • the angle ⁇ of the incident angle of the light (indicated by the arrow in FIG. 17) incident on the pixel array unit (light receiving unit) 30 is close to 0 degrees in the central region of the pixel array unit 30. It becomes larger as it gets closer to the outer periphery of the pixel array portion 30. Then, as the angle ⁇ of the incident angle becomes smaller, light is more likely to be reflected by the surface (upper surface) of the pixel separation wall 304 parallel to the light receiving surface 10a, and the possibility of crosstalk increases.
  • the pixel separation wall 304 N in the image sensor 100 in the central region of the pixel array unit 30, where crosstalk is likely to occur by the mechanism as described above, the pixel separation wall 304 Narrow the width. Further, in the present embodiment, the width of the pixel separation wall 304 is widened in the image sensor 100 in the outer peripheral region of the pixel array unit 30, where crosstalk is unlikely to occur by the mechanism as described above. In other words, in the present embodiment, the width of the pixel separation wall 304 in the image sensor 100 in the central region is narrower than the width of the pixel separation wall 304 in the image sensor 100 in the outer peripheral region.
  • the present embodiment light is reflected by the surface (upper surface) of the pixel separation wall 304 parallel to the light receiving surface 10a in the image sensor 100 in the central region where the angle ⁇ of the incident angle is small. It is possible to suppress the occurrence of crosstalk caused by this. Further, according to the present embodiment, in the image sensor 100 in the outer peripheral region where crosstalk is unlikely to occur by the same mechanism, it occurs in the photoelectric conversion unit 302 of one of the two pixels 300a and 300b. It is possible to suppress the inflow of electric charges to the other pixel and improve the accuracy (separation ratio) of phase difference detection.
  • the image pickup element (second image pickup element) 100 that absorbs green light since it is considered that the above-mentioned diffused reflection is unlikely to occur in the image pickup element (second image pickup element) 100 that absorbs green light, the image pickup is performed from the light receiving surface 10a side. Looking at the element 100, the pixel separation wall 304 that separates the two pixels 300a and 300b is not provided with the slit 312. By doing so, according to these embodiments, in the image sensor 100 that absorbs light having a green wavelength component and generates an electric charge, the photoelectric conversion of one of the two pixels 300a and 300b is performed. Since it is possible to suppress the charge generated in the unit 302 from flowing into the other pixel, the separation ratio of the pixels 300a and 300b can be improved. As a result, in these embodiments, in the image sensor 100 that absorbs light having a green wavelength component, the accuracy of phase difference detection is improved, and the occurrence of point defects on the captured image due to variations in charge inflow can be suppressed. ..
  • the pixel separation wall 304 having a form corresponding to the difference in light characteristics due to the difference in wavelength is provided for each image sensor 100, thereby improving the accuracy of phase difference detection. Deterioration of the captured image can be avoided.
  • the image pickup device 100 in which the first conductive type is N-type, the second conductive type is P-type, and electrons are used as signal charges has been described.
  • the embodiment is not limited to such an example.
  • this embodiment can be applied to an image pickup device 100 in which the first conductive type is P-type, the second conductive type is N-type, and holes are used as signal charges.
  • the semiconductor substrate 10 does not necessarily have to be a silicon substrate, and may be another substrate (for example, an SOI (Silicon On Insulator) substrate, a SiGe substrate, or the like). Further, the semiconductor substrate 10 may have a semiconductor structure or the like formed on such various substrates.
  • SOI Silicon On Insulator
  • the image pickup device 1 is not limited to the image pickup device 1 that detects the distribution of the incident light amount of visible light and captures the image as an image.
  • the present embodiment includes an imaging device that captures the distribution of incident amounts of infrared rays, X-rays, particles, etc. as an image, and fingerprints that detect the distribution of other physical quantities such as pressure and capacitance and capture the image as an image. It can be applied to an image pickup device (physical quantity distribution detection device) such as a detection sensor.
  • the image pickup apparatus 1 according to the embodiment of the present disclosure can be manufactured by using the methods, devices, and conditions used for manufacturing a general semiconductor device. That is, the image pickup apparatus 1 according to the present embodiment can be manufactured by using the manufacturing process of the existing semiconductor device.
  • Examples of the above-mentioned method include a PVD (Physical Vapor Deposition) method, a CVD (Chemical Vapor Deposition) method, and an ALD (Atomic Layer Deposition) method.
  • the PVD method includes a vacuum vapor deposition method, an EB (electron beam) vapor deposition method, various sputtering methods (magnetron sputtering method, RF (Radio Frequency) -DC (Direct Curent) combined bias sputtering method, and ECR (Electron Cyclotron Resonance) sputtering method.
  • examples of the CVD method include a plasma CVD method, a thermal CVD method, an organometallic (MO) CVD method, and an optical CVD method.
  • Various printing methods such as method and flexo printing method; stamp method; spray method; air doctor coater method, blade coater method, rod coater method, knife coater method, squeeze coater method, reverse roll coater method, transfer roll coater method, gravure coater method.
  • Kiss coater method, cast coater method, spray coater method, slit orifice coater method, calendar coater method and various other coating methods can be mentioned.
  • examples of the patterning method include chemical etching such as shadow mask, laser transfer, and photolithography, and physical etching by ultraviolet rays, laser, and the like.
  • examples of the flattening technique include a CMP (Chemical Mechanical Polishing) method, a laser flattening method, and a reflow method.
  • FIG. 18 is an explanatory diagram showing an example of a schematic functional configuration of the camera 700 to which the technique according to the present disclosure (the present technique) can be applied.
  • the camera 700 includes an image pickup device 702, an optical lens 710, a shutter mechanism 712, a drive circuit unit 714, and a signal processing circuit unit 716.
  • the optical lens 710 forms an image of image light (incident light) from the subject on the image pickup surface of the image pickup apparatus 702.
  • the signal charge is accumulated in the image pickup device 100 of the image pickup apparatus 702 for a certain period of time.
  • the shutter mechanism 712 controls the light irradiation period and the light blocking period of the image pickup apparatus 702 by opening and closing.
  • the drive circuit unit 714 supplies drive signals for controlling the signal transfer operation of the image pickup apparatus 702, the shutter operation of the shutter mechanism 712, and the like.
  • the image pickup apparatus 702 performs signal transfer based on the drive signal (timing signal) supplied from the drive circuit unit 714.
  • the signal processing circuit unit 716 performs various signal processing. For example, the signal processing circuit unit 716 outputs the signal-processed video signal to a storage medium (not shown) such as a memory, or outputs it to a display unit (not shown).
  • FIG. 19 is a block diagram showing an example of a schematic functional configuration of a smartphone 900 to which the technology according to the present disclosure (the present technology) can be applied.
  • the smartphone 900 includes a CPU (Central Processing Unit) 901, a ROM (Read Only Memory) 902, and a RAM (Random Access Memory) 903.
  • the smartphone 900 also includes a storage device 904, a communication module 905, and a sensor module 907.
  • the smartphone 900 includes an image pickup device 909, a display device 910, a speaker 911, a microphone 912, an input device 913, and a bus 914.
  • the smartphone 900 may have a processing circuit such as a DSP (Digital Signal Processor) in place of or in combination with the CPU 901.
  • DSP Digital Signal Processor
  • the CPU 901 functions as an arithmetic processing device and a control device, and controls all or a part of the operation in the smartphone 900 according to various programs recorded in the ROM 902, the RAM 903, the storage device 904, and the like.
  • the ROM 902 stores programs, calculation parameters, and the like used by the CPU 901.
  • the RAM 903 primarily stores a program used in the execution of the CPU 901, parameters that change appropriately in the execution, and the like.
  • the CPU 901, ROM 902, and RAM 903 are connected to each other by a bus 914.
  • the storage device 904 is a data storage device configured as an example of the storage unit of the smartphone 900.
  • the storage device 904 is composed of, for example, a magnetic storage device such as an HDD (Hard Disk Drive), a semiconductor storage device, an optical storage device, and the like.
  • the storage device 904 stores programs executed by the CPU 901, various data, various data acquired from the outside, and the like.
  • the communication module 905 is a communication interface composed of, for example, a communication device for connecting to the communication network 906.
  • the communication module 905 may be, for example, a communication card for a wired or wireless LAN (Local Area Network), Bluetooth (registered trademark), WUSB (Wireless USB), or the like. Further, the communication module 905 may be a router for optical communication, a router for ADSL (Asymmetric Digital Subscriber Line), a modem for various communications, or the like.
  • the communication module 905 transmits and receives signals and the like to and from the Internet and other communication devices using a predetermined protocol such as TCP / IP.
  • the communication network 906 connected to the communication module 905 is a network connected by wire or wirelessly, and is, for example, the Internet, a home LAN, infrared communication, satellite communication, or the like.
  • the sensor module 907 is, for example, a motion sensor (for example, an acceleration sensor, a gyro sensor, a geomagnetic sensor, etc.), a biometric information sensor (for example, a pulse sensor, a blood pressure sensor, a fingerprint sensor, etc.), or a position sensor (for example, GNSS (Global Navigation)). Includes various sensors such as Satellite System) receiver, etc.).
  • a motion sensor for example, an acceleration sensor, a gyro sensor, a geomagnetic sensor, etc.
  • a biometric information sensor for example, a pulse sensor, a blood pressure sensor, a fingerprint sensor, etc.
  • GNSS Global Navigation
  • Includes various sensors such as Satellite System) receiver, etc. etc.
  • the image pickup device 909 is provided on the front surface of the smartphone 900, and can image an object or the like located on the back surface side or the front side of the smartphone 900. Specifically, the image pickup device 909 is applied to an image pickup element (not shown) such as a CMOS (Complementary MOS) image sensor to which the technique (the present technology) according to the present disclosure can be applied, and a signal photoelectrically converted by the image pickup device. It can be configured to include a signal processing circuit (not shown) that performs image pickup signal processing.
  • CMOS Complementary MOS
  • the image pickup apparatus 909 includes an optical system mechanism (not shown) composed of an image pickup lens, an aperture mechanism, a zoom lens, a focus lens, and the like, and a drive system mechanism (not shown) that controls the operation of the optical system mechanism.
  • an optical system mechanism (not shown) composed of an image pickup lens, an aperture mechanism, a zoom lens, a focus lens, and the like
  • a drive system mechanism (not shown) that controls the operation of the optical system mechanism.
  • the image sensor collects the incident light from the object as an optical image
  • the signal processing circuit photoelectrically converts the imaged optical image on a pixel-by-pixel basis and reads out the signal of each pixel as an image pickup signal.
  • the captured image can be acquired by image processing.
  • the display device 910 is provided on the surface of the smartphone 900, and can be, for example, a display device such as an LCD (Liquid Crystal Display) or an organic EL (Electroluminescence) display.
  • the display device 910 can display an operation screen, an image captured by the image pickup device 909 described above, and the like.
  • the speaker 911 can output, for example, call voice, voice associated with the video content displayed by the display device 910 described above, and the like to the user.
  • the microphone 912 can collect, for example, the voice of the user's call, the voice including the command to activate the function of the smartphone 900, and the voice of the surrounding environment of the smartphone 900.
  • the input device 913 is a device operated by the user, such as a button, a keyboard, a touch panel, and a mouse.
  • the input device 913 includes an input control circuit that generates an input signal based on the information input by the user and outputs the input signal to the CPU 901.
  • the user can input various data to the smartphone 900 and instruct the processing operation.
  • the configuration example of the smartphone 900 is shown above.
  • Each of the above-mentioned components may be configured by using general-purpose members, or may be configured by hardware specialized for the function of each component. Such a configuration can be appropriately changed depending on the technical level at the time of implementation.
  • FIG. 20 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technique according to the present disclosure (the present technique) can be applied.
  • FIG. 20 shows a surgeon (doctor) 11131 performing surgery on patient 11132 on patient bed 11133 using the endoscopic surgery system 11000.
  • the endoscopic surgery system 11000 includes an endoscope 11100, other surgical tools 11110 such as an abdominal tube 11111 and an energy treatment tool 11112, and a support arm device 11120 that supports the endoscope 11100.
  • a cart 11200 equipped with various devices for endoscopic surgery.
  • the endoscope 11100 is composed of a lens barrel 11101 in which a region having a predetermined length from the tip is inserted into the body cavity of the patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101.
  • the endoscope 11100 configured as a so-called rigid mirror having a rigid barrel 11101 is illustrated, but the endoscope 11100 may be configured as a so-called flexible mirror having a flexible barrel. good.
  • An opening in which an objective lens is fitted is provided at the tip of the lens barrel 11101.
  • a light source device 11203 is connected to the endoscope 11100, and the light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is an objective. It is irradiated toward the observation target in the body cavity of the patient 11132 through the lens.
  • the endoscope 11100 may be a direct endoscope, a perspective mirror, or a side endoscope.
  • An optical system and an image pickup element are provided inside the camera head 11102, and the reflected light (observation light) from the observation target is focused on the image pickup element by the optical system.
  • the observation light is photoelectrically converted by the image sensor, and an electric signal corresponding to the observation light, that is, an image signal corresponding to the observation image is generated.
  • the image signal is transmitted as RAW data to the camera control unit (CCU: Camera Control Unit) 11201.
  • CCU Camera Control Unit
  • the CCU11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and the like, and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Further, the CCU 11201 receives an image signal from the camera head 11102, and performs various image processing on the image signal for displaying an image based on the image signal, such as development processing (demosaic processing).
  • a CPU Central Processing Unit
  • GPU Graphics Processing Unit
  • the display device 11202 displays an image based on the image signal processed by the CCU 11201 under the control of the CCU 11201.
  • the light source device 11203 is composed of, for example, a light source such as an LED (Light Emitting Diode), and supplies irradiation light to the endoscope 11100 when photographing an operating part or the like.
  • a light source such as an LED (Light Emitting Diode)
  • LED Light Emitting Diode
  • the input device 11204 is an input interface for the endoscopic surgery system 11000.
  • the user can input various information and input instructions to the endoscopic surgery system 11000 via the input device 11204.
  • the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) by the endoscope 11100.
  • the treatment tool control device 11205 controls the drive of the energy treatment tool 11112 for cauterizing, incising, sealing a blood vessel, or the like of a tissue.
  • the pneumoperitoneum device 11206 uses a gas in the pneumoperitoneum tube 11111 to inflate the body cavity of the patient 11132 for the purpose of securing the field of view by the endoscope 11100 and securing the work space of the operator.
  • the recorder 11207 is a device capable of recording various information related to surgery.
  • the printer 11208 is a device capable of printing various information related to surgery in various formats such as texts, images, and graphs.
  • the light source device 11203 that supplies the irradiation light to the endoscope 11100 when photographing the surgical site can be composed of, for example, an LED, a laser light source, or a white light source composed of a combination thereof.
  • a white light source is configured by combining RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high accuracy. Therefore, the light source device 11203 adjusts the white balance of the captured image. It can be carried out.
  • the laser light from each of the RGB laser light sources is irradiated to the observation target in a time-divided manner, and the drive of the image sensor of the camera head 11102 is controlled in synchronization with the irradiation timing to support each of RGB. It is also possible to capture the image in a time-divided manner. According to this method, a color image can be obtained without providing a color filter on the image sensor.
  • the drive of the light source device 11203 may be controlled so as to change the intensity of the output light at predetermined time intervals.
  • the drive of the image sensor of the camera head 11102 in synchronization with the timing of changing the light intensity to acquire an image in a time-divided manner and synthesizing the image, so-called high dynamic without blackout and overexposure. Range images can be generated.
  • the light source device 11203 may be configured to be able to supply light in a predetermined wavelength band corresponding to special light observation.
  • special light observation for example, by utilizing the wavelength dependence of light absorption in body tissue to irradiate light in a narrow band as compared with the irradiation light (that is, white light) in normal observation, the surface layer of the mucous membrane.
  • a so-called narrow band imaging is performed in which a predetermined tissue such as a blood vessel is photographed with high contrast.
  • fluorescence observation may be performed in which an image is obtained by fluorescence generated by irradiating with excitation light.
  • the body tissue is irradiated with excitation light to observe the fluorescence from the body tissue (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and the body tissue is injected. It is possible to obtain a fluorescence image by irradiating excitation light corresponding to the fluorescence wavelength of the reagent.
  • the light source device 11203 may be configured to be capable of supplying narrow band light and / or excitation light corresponding to such special light observation.
  • FIG. 21 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU11201 shown in FIG.
  • the camera head 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera head control unit 11405.
  • CCU11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413.
  • the camera head 11102 and CCU11201 are communicably connected to each other by a transmission cable 11400.
  • the lens unit 11401 is an optical system provided at a connection portion with the lens barrel 11101.
  • the observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and incident on the lens unit 11401.
  • the lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.
  • the image pickup unit 11402 is composed of an image pickup element.
  • the image sensor constituting the image pickup unit 11402 may be one (so-called single plate type) or a plurality (so-called multi-plate type).
  • each image pickup element may generate an image signal corresponding to each of RGB, and a color image may be obtained by synthesizing them.
  • the image pickup unit 11402 may be configured to have a pair of image pickup elements for acquiring image signals for the right eye and the left eye corresponding to 3D (Dimensional) display, respectively.
  • the 3D display enables the operator 11131 to more accurately grasp the depth of the biological tissue in the surgical site.
  • a plurality of lens units 11401 may be provided corresponding to each image pickup element.
  • the imaging unit 11402 does not necessarily have to be provided on the camera head 11102.
  • the imaging unit 11402 may be provided inside the lens barrel 11101 immediately after the objective lens.
  • the drive unit 11403 is composed of an actuator, and the zoom lens and focus lens of the lens unit 11401 are moved by a predetermined distance along the optical axis under the control of the camera head control unit 11405. As a result, the magnification and focus of the image captured by the imaging unit 11402 can be adjusted as appropriate.
  • the communication unit 11404 is composed of a communication device for transmitting and receiving various information to and from the CCU11201.
  • the communication unit 11404 transmits the image signal obtained from the image pickup unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.
  • the communication unit 11404 receives a control signal for controlling the drive of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405.
  • the control signal includes, for example, information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and / or information to specify the magnification and focus of the captured image, and the like. Contains information about the condition.
  • the imaging conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of CCU11201 based on the acquired image signal. good.
  • the so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function are mounted on the endoscope 11100.
  • the camera head control unit 11405 controls the drive of the camera head 11102 based on the control signal from the CCU 11201 received via the communication unit 11404.
  • the communication unit 11411 is composed of a communication device for transmitting and receiving various information to and from the camera head 11102.
  • the communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.
  • the communication unit 11411 transmits a control signal for controlling the drive of the camera head 11102 to the camera head 11102.
  • Image signals and control signals can be transmitted by telecommunications, optical communication, or the like.
  • the image processing unit 11412 performs various image processing on the image signal which is the RAW data transmitted from the camera head 11102.
  • the control unit 11413 performs various controls related to the imaging of the surgical site and the like by the endoscope 11100 and the display of the captured image obtained by the imaging of the surgical site and the like. For example, the control unit 11413 generates a control signal for controlling the drive of the camera head 11102.
  • control unit 11413 causes the display device 11202 to display an image captured by the surgical unit or the like based on the image signal processed by the image processing unit 11412.
  • the control unit 11413 may recognize various objects in the captured image by using various image recognition techniques. For example, the control unit 11413 detects the shape, color, and the like of the edge of an object included in the captured image to remove surgical tools such as forceps, a specific biological part, bleeding, and mist when using the energy treatment tool 11112. Can be recognized.
  • the control unit 11413 may superimpose and display various surgical support information on the image of the surgical unit by using the recognition result. By superimposing and displaying the surgical support information and presenting it to the surgeon 11131, it is possible to reduce the burden on the surgeon 11131 and to allow the surgeon 11131 to proceed with the surgery reliably.
  • the transmission cable 11400 that connects the camera head 11102 and CCU11201 is an electric signal cable that supports electric signal communication, an optical fiber that supports optical communication, or a composite cable thereof.
  • the communication is performed by wire using the transmission cable 11400, but the communication between the camera head 11102 and the CCU11201 may be performed wirelessly.
  • the above is an example of an endoscopic surgery system to which the technology according to the present disclosure can be applied.
  • the technique according to the present disclosure can be applied to, for example, the endoscope 11100, the camera head 11102 (imaging unit 11402), the CCU 11201 (image processing unit 11412), and the like) among the configurations described above.
  • the technique according to the present disclosure may be applied to other, for example, a microscopic surgery system.
  • the technology according to the present disclosure can be applied to various products.
  • the technology according to the present disclosure is realized as a device mounted on a moving body of any kind such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility, an airplane, a drone, a ship, and a robot. You may.
  • FIG. 22 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technique according to the present disclosure can be applied.
  • the vehicle control system 12000 includes a plurality of electronic control units connected via the communication network 12001.
  • the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside information detection unit 12030, an in-vehicle information detection unit 12040, and an integrated control unit 12050.
  • a microcomputer 12051, an audio image output unit 12052, and an in-vehicle network I / F (interface) 12053 are shown as a functional configuration of the integrated control unit 12050.
  • the drive system control unit 12010 controls the operation of the device related to the drive system of the vehicle according to various programs.
  • the drive system control unit 12010 provides a driving force generator for generating the driving force of the vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to the wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism for adjusting and a braking device for generating a braking force of a vehicle.
  • the body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs.
  • the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as a head lamp, a back lamp, a brake lamp, a winker, or a fog lamp.
  • the body system control unit 12020 may be input with radio waves transmitted from a portable device that substitutes for the key or signals of various switches.
  • the body system control unit 12020 receives inputs of these radio waves or signals and controls a vehicle door lock device, a power window device, a lamp, and the like.
  • the vehicle outside information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000.
  • the imaging unit 12031 is connected to the vehicle exterior information detection unit 12030.
  • the vehicle outside information detection unit 12030 causes the image pickup unit 12031 to capture an image of the outside of the vehicle and receives the captured image.
  • the vehicle exterior information detection unit 12030 may perform object detection processing or distance detection processing such as a person, a vehicle, an obstacle, a sign, or a character on the road surface based on the received image.
  • the imaging unit 12031 is an optical sensor that receives light and outputs an electric signal according to the amount of the light received.
  • the image pickup unit 12031 can output an electric signal as an image or can output it as distance measurement information. Further, the light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.
  • the in-vehicle information detection unit 12040 detects the in-vehicle information.
  • a driver state detection unit 12041 that detects the driver's state is connected to the in-vehicle information detection unit 12040.
  • the driver state detection unit 12041 includes, for example, a camera that images the driver, and the in-vehicle information detection unit 12040 determines the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated, or it may be determined whether the driver is dozing.
  • the microcomputer 12051 calculates the control target value of the driving force generator, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the outside information detection unit 12030 or the inside information detection unit 12040, and the drive system control unit.
  • a control command can be output to 12010.
  • the microcomputer 12051 realizes ADAS (Advanced Driver Assistance System) functions including vehicle collision avoidance or impact mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane deviation warning, and the like. It is possible to perform cooperative control for the purpose of.
  • ADAS Advanced Driver Assistance System
  • the microcomputer 12051 controls the driving force generator, the steering mechanism, the braking device, and the like based on the information around the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, so that the driver can control the vehicle. It is possible to perform coordinated control for the purpose of automatic driving, etc., which runs autonomously without depending on the operation.
  • the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the vehicle exterior information detection unit 12030.
  • the microcomputer 12051 controls the headlamps according to the position of the preceding vehicle or the oncoming vehicle detected by the external information detection unit 12030, and performs coordinated control for the purpose of anti-glare such as switching the high beam to the low beam. It can be carried out.
  • the audio image output unit 12052 transmits the output signal of at least one of the audio and the image to the output device capable of visually or audibly notifying the passenger or the outside of the vehicle of the information.
  • an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices.
  • the display unit 12062 may include, for example, at least one of an onboard display and a heads-up display.
  • FIG. 23 is a diagram showing an example of the installation position of the imaging unit 12031.
  • the vehicle 12100 has imaging units 12101, 12102, 12103, 12104, 12105 as imaging units 12031.
  • the imaging units 12101, 12102, 12103, 12104, 12105 are provided at positions such as the front nose, side mirrors, rear bumpers, back doors, and the upper part of the windshield in the vehicle interior of the vehicle 12100, for example.
  • the image pickup unit 12101 provided on the front nose and the image pickup section 12105 provided on the upper part of the windshield in the vehicle interior mainly acquire an image in front of the vehicle 12100.
  • the imaging units 12102 and 12103 provided in the side mirrors mainly acquire images of the side of the vehicle 12100.
  • the imaging unit 12104 provided on the rear bumper or the back door mainly acquires an image of the rear of the vehicle 12100.
  • the images in front acquired by the imaging units 12101 and 12105 are mainly used for detecting a preceding vehicle or a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.
  • FIG. 23 shows an example of the photographing range of the imaging units 12101 to 12104.
  • the imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose
  • the imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively
  • the imaging range 12114 indicates the imaging range of the imaging units 12102 and 12103.
  • the imaging range of the imaging unit 12104 provided on the rear bumper or the back door is shown. For example, by superimposing the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 as viewed from above can be obtained.
  • At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information.
  • at least one of the image pickup units 12101 to 12104 may be a stereo camera composed of a plurality of image pickup elements, or an image pickup element having pixels for phase difference detection.
  • the microcomputer 12051 has a distance to each three-dimensional object within the imaging range 12111 to 12114 based on the distance information obtained from the imaging units 12101 to 12104, and a temporal change of this distance (relative velocity with respect to the vehicle 12100). By obtaining can. Further, the microcomputer 12051 can set an inter-vehicle distance to be secured in front of the preceding vehicle in advance, and can perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like. In this way, it is possible to perform coordinated control for the purpose of automatic driving or the like in which the vehicle travels autonomously without depending on the operation of the driver.
  • automatic braking control including follow-up stop control
  • automatic acceleration control including follow-up start control
  • the microcomputer 12051 converts three-dimensional object data related to a three-dimensional object into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, electric poles, and other three-dimensional objects based on the distance information obtained from the imaging units 12101 to 12104. It can be classified and extracted and used for automatic avoidance of obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that can be seen by the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 12051 is used via the audio speaker 12061 or the display unit 12062. By outputting an alarm to the driver and performing forced deceleration and avoidance steering via the drive system control unit 12010, driving support for collision avoidance can be provided.
  • At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays.
  • the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured image of the imaging units 12101 to 12104.
  • pedestrian recognition includes, for example, a procedure for extracting feature points in an image captured by an imaging unit 12101 to 12104 as an infrared camera, and pattern matching processing for a series of feature points indicating the outline of an object to determine whether or not the pedestrian is a pedestrian. It is done by the procedure to determine.
  • the audio image output unit 12052 When the microcomputer 12051 determines that a pedestrian is present in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio image output unit 12052 outputs a square contour line for emphasizing the recognized pedestrian.
  • the display unit 12062 is controlled so as to superimpose and display. Further, the audio image output unit 12052 may control the display unit 12062 so as to display an icon or the like indicating a pedestrian at a desired position.
  • the above is an example of a vehicle control system to which the technology according to the present disclosure can be applied.
  • the technique according to the present disclosure can be applied to, for example, the imaging unit 12031 among the configurations described above.
  • An image pickup device including first and second image pickup elements that convert light into electric charges, respectively.
  • Each of the first and second image sensors With a plurality of pixels provided in the semiconductor substrate and adjacent to each other, A pixel separation wall that separates a plurality of adjacent pixels, A color filter provided above the light receiving surface of the semiconductor substrate and transmitting light having different wavelengths between the first image sensor and the second image sensor.
  • the pixel separation wall included in the first image sensor is When viewed from the light receiving surface side, it has a slit in the center of the first image sensor.
  • the pixel separation wall of the second image sensor is When viewed from the light receiving surface side, it does not have a slit at the center of the second image sensor. Imaging device.
  • Each of the first and second image pickup devices has two of the pixels.
  • Each of the first and second image pickup devices has four of the pixels.
  • Each of the first and second image sensors It further has an element separation wall that surrounds the plurality of pixels of each of the first and second image pickup devices and separates the adjacent image pickup devices from each other.
  • the pixel separation wall and the element separation wall are provided so as to penetrate from the light receiving surface to the middle of the semiconductor substrate along the thickness direction of the semiconductor substrate. The depth of the pixel separation wall with respect to the light receiving surface is shallower than the depth of the element separation wall.
  • the pixel separation wall is provided so as to penetrate from the light receiving surface to the middle of the semiconductor substrate along the thickness direction of the semiconductor substrate.
  • the element separation wall is provided so as to penetrate the semiconductor substrate along the thickness direction of the semiconductor substrate.
  • the third image sensor is With the plurality of pixels provided in the semiconductor substrate and adjacent to each other, The pixel separation wall that separates the plurality of adjacent pixels, The color filter provided above the light receiving surface of the semiconductor substrate and transmitting light having a wavelength different from the wavelength of light transmitted by the color filters of the first and second image pickup elements.
  • the imaging device according to any one of (1) to (8) above.
  • the image pickup apparatus according to (9) above, wherein the pixel separation wall of the third image pickup element does not have a slit in the center of the third image pickup element when viewed from the light receiving surface side.
  • the third image sensor is It further has an element separation wall that surrounds the plurality of pixels of the third image pickup element and separates the adjacent image pickup elements from each other.
  • the pixel separation wall and the element separation wall are provided so as to penetrate from the light receiving surface to the middle of the semiconductor substrate along the thickness direction of the semiconductor substrate.
  • the depth of the pixel separation wall with respect to the light receiving surface is shallower than the depth of the element separation wall.
  • the third image sensor is It further has an element separation wall that surrounds the plurality of pixels of the third image pickup element and separates the adjacent image pickup elements from each other.
  • the pixel separation wall is provided so as to penetrate from the light receiving surface to the middle of the semiconductor substrate along the thickness direction of the semiconductor substrate.
  • the element separation wall is provided so as to penetrate the semiconductor substrate along the thickness direction of the semiconductor substrate.
  • the imaging device has a light receiving portion composed of a plurality of the image pickup elements arranged in a matrix on the light receiving surface of the semiconductor substrate.
  • the depth of the pixel separation wall with respect to the light receiving surface in the image sensor in the central region of the light receiving portion is shallower than the depth of the pixel separation wall in the image sensor in the outer peripheral region of the light receiving portion.
  • the imaging device according to any one of (1) to (14) above.
  • It has a light receiving portion composed of a plurality of the image pickup elements arranged in a matrix on the light receiving surface of the semiconductor substrate.
  • the width of the pixel separation wall in the image pickup element in the central region of the light receiving portion is narrower than the width of the pixel separation wall in the image pickup element in the outer peripheral region of the light receiving portion.
  • the imaging device according to any one of (1) to (15) above.
  • An electronic device including an image pickup device including first and second image pickup elements that convert light into electric charges.
  • Each of the first and second image sensors With a plurality of pixels provided in the semiconductor substrate and adjacent to each other, A pixel separation wall that separates a plurality of adjacent pixels, A color filter provided above the light receiving surface of the semiconductor substrate and transmitting light having different wavelengths between the first image sensor and the second image sensor.
  • the pixel separation wall included in the first image sensor is When viewed from the light receiving surface side, it has a slit in the center of the first image sensor.
  • the pixel separation wall of the second image sensor is When viewed from the light receiving surface side, it does not have a slit at the center of the second image sensor. Electronics.
  • Image sensor Semiconductor substrate 10a Light receiving surface 10b Surface 30 Pixel array part 32 Vertical drive circuit part 34 Column signal processing circuit part 36 Horizontal drive circuit part 38 Output circuit part 40 Control circuit part 42 Pixel drive wiring 44 Vertical signal line 46 Horizontal signal Line 48 Input / output terminal 100, 100a Image sensor 200 On-chip lens 202 Color filter 204 Shading part 300, 300a, 300b, 300c, 300d Pixel 302 Photoelectric conversion part 304 Pixel separation wall 310 Element separation wall 400a, 400b Transfer gate

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  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
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JP2019165136A (ja) * 2018-03-20 2019-09-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2018142739A (ja) * 2018-06-06 2018-09-13 キヤノン株式会社 光電変換装置

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WO2023234069A1 (ja) * 2022-05-30 2023-12-07 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
WO2023243237A1 (ja) * 2022-06-15 2023-12-21 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
WO2024018934A1 (ja) * 2022-07-22 2024-01-25 ソニーセミコンダクタソリューションズ株式会社 撮像装置
WO2024057739A1 (ja) * 2022-09-14 2024-03-21 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光検出装置の製造方法、及び電子機器
WO2025032961A1 (ja) * 2023-08-07 2025-02-13 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

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