CN115275770A

CN115275770A - Novel LED and laser integrated structure and preparation method thereof

Info

Publication number: CN115275770A
Application number: CN202210916837.5A
Authority: CN
Inventors: 李国强; 朱子赫; 雷蕾; 姚书南; 柴华卿
Original assignee: South China University of Technology SCUT
Current assignee: South China University of Technology SCUT
Priority date: 2022-08-01
Filing date: 2022-08-01
Publication date: 2022-11-01

Abstract

The invention relates to the field of LED manufacturing and laser integration, and discloses a novel LED and laser integrated structure and a preparation method thereof. The utility model provides a novel LED and laser integrated structure, includes LED chip and laser instrument chip, and LED chip and laser chip pass through the regional connection of combination, and the combination region includes LED bonded area and laser instrument bonded area, and the LED bonded area has bonding metal layer, and the laser instrument bonded area has the contact bonding structure, and the contact bonding structure is aimed at on the bonding metal layer. The LED and laser integrated chip provided by the invention has the advantages of low LED cost and high luminous efficiency, and effectively improves the optical output power and coupling efficiency of the chip by combining the optical waveguide coupling effect of the laser. Meanwhile, the laser manufacturing and transferring substrate adopts a metal bonding process, the process is simple, the yield is high, and the method is suitable for industrial production and has good application prospect.

Description

Novel LED and laser integrated structure and preparation method thereof

Technical Field

The invention relates to the field of LED manufacturing and laser integration, in particular to a novel LED and laser integrated structure and a preparation method thereof.

Background

Compared with the traditional incandescent lamp and fluorescent lamp, the InGaN/GaN Light Emitting Diode (LED) has the advantages of low power consumption, high brightness, long service life, easiness in modulation, high response speed and the like, and has wide application prospects in the fields of road lighting, intelligent display, visible light communication and the like.

In the current research of visible light communication, most of the research adopts GaN blue light LED or RGB-LED based on single white fluorescent powder to emit light as a light source. Because the alternating current signal can not directly drive the LED, the signal modulation degree of the visible light communication system is small, the communication signal-to-noise ratio of the system is reduced along with the increase of the distance, and the noise is increased. Since silicon material itself cannot emit light, how to integrate a laser (such as a III-V laser) with an LED chip is a key of a visible light communication transceiver module. However, the existing laser and LED chip integration technology has the problems of high alignment accuracy requirement, low optical output power, low coupling efficiency, and the like.

The prior art discloses an optical waveguide coupling packaging structure, an installation method and an optical module, wherein the optical waveguide coupling packaging structure comprises a laser, a silicon optical chip and a first waveguide which is integrated on the silicon optical chip and aligned with a forward emitting end of the laser, the optical waveguide coupling packaging structure further comprises a laser carrier plate which is electrically connected with the laser, the laser is arranged on the laser carrier plate and is electrically connected with the laser carrier plate, and the laser carrier plate is fixed on the silicon optical chip and is electrically connected with the silicon optical chip. The optical waveguide coupling packaging structure provided by the invention has the advantages of smaller packaging size, high packaging yield and simple structure.

The prior art discloses a laser and silicon optical waveguide coupling structure based on flip-chip bonding, which comprises a laser chip provided with an alignment mark; the silicon optical chip is provided with a waveguide, an end face coupler and an etching groove for placing a laser chip; and the metal bonding layer is used for connecting the laser chip and the silicon optical chip. The invention can realize the high-efficiency coupling of the semiconductor laser chip and the silicon optical waveguide chip and can solve the problem of practical light source in silicon-based photonics; according to the invention, the laser placing groove is directly etched on the silicon optical waveguide chip, and the coupling precision is improved by controlling the etching depth; the passive coupling of the laser and the silicon optical waveguide is carried out by adopting a flip bonding mode, and the passive coupling has the characteristics of easiness in control, high precision, high coupling efficiency, integration and integration.

Disclosure of Invention

The invention provides a novel LED and laser integrated structure for overcoming the problems of high alignment precision requirement, low light output power, low coupling efficiency and the like in the laser and LED chip integrated technology in the prior art.

Meanwhile, a preparation method of the novel LED and laser integrated structure is provided.

In order to solve the technical problems, the technical scheme of the invention is as follows:

the utility model provides a novel LED and laser integrated configuration, includes LED chip and laser chip, LED chip and laser chip pass through the combination regional connection, the combination region includes LED bonded area and laser bonding area, the LED bonded area has bonding metal layer, the laser bonding area has the contact bonding structure, the bonding metal layer is aimed at the contact bonding structure.

Preferably, the LED chip sequentially comprises a conductive substrate layer, an AlN buffer layer, a u-GaN layer, an n-GaN layer, an InGaN/GaN multiple quantum well layer (MQWs), a p-GaN layer, a p-contact reflector metal, a protective layer and a p electrode from bottom to top, and the LED bonding region is positioned on the upper surface of the conductive substrate layer.

Preferably, the laser chip comprises an SOI second substrate, an n electrode, an n-AlGaN optical limiting layer, an n-InGaN first waveguide, an InGaN/GaN multi-quantum well layer (MQWs), a p-InGaN second waveguide, a p-InGaN optical limiting layer, a p-AlGaN Electronic Barrier Layer (EBL) and a p electrode from bottom to top, and the laser bonding region is positioned on the lower surface of the SOI second substrate.

Preferably, the bonding metal layer is any one of Ni, au, sn and Ti, and the thickness is 500nm-5 μm.

Preferably, the conductive substrate is a Si conductive substrate, and the thickness of the conductive substrate is 1000-5000nm; the AlN buffer layer is 1000-3000nm thick.

Preferably, the p-contact reflector metal and the protective layer comprise the p-contact reflector metal and the protective layer, the reflector metal is one or two of Ag and Ni, and the thickness of the reflector metal is 50-5000nm; the protective layer is a TiW layer with the thickness of 50-300nm.

Preferably, the p electrode is one of Cr, pt and Au or an alloy consisting of more than two of Cr, pt and Au, and the thickness of the p electrode is 2-6 μm.

Preferably, the SOI second substrate is a metal substrate, and the metal substrate is any one of Ni and Au, and has a thickness of 100 to 500 μm.

Preferably, the p electrode is one of Cr, pt and Au or an alloy consisting of more than two of Cr, pt and Au, and the thickness of the p electrode is 3-4 μm; the n electrode is one or more of Ti, cr, ag, au and Pt, and has a thickness of 2-5 μm.

A preparation method of the novel LED and laser integrated structure comprises the following preparation steps:

growing an AlN buffer layer, a u-GaN layer, an n-GaN layer, an InGaN/GaN multi-quantum well layer (MQWs), a p-GaN layer, p-contact reflector metal and a protective layer on the surface of a Si substrate in sequence, and depositing a p electrode on the surfaces of the p-contact reflector metal and the protective layer to obtain an LED epitaxial wafer;

manufacturing a bonding metal layer on the upper surface of the conductive substrate, performing surface activation, and performing annealing treatment to obtain an LED bonding substrate;

step three, stripping the Si substrate on the LED epitaxial wafer in the step one, and bonding the exposed AlN buffer layer with the region without the bonding metal layer on the upper surface of the LED bonding substrate in the step two to obtain an LED chip;

sequentially growing an n-AlGaN optical limiting layer, an n-InGaN first waveguide, an InGaN/GaN multi-quantum well layer (MQWs), a p-InGaN second waveguide, a p-InGaN optical limiting layer and a p-AlGaN Electronic Barrier Layer (EBL) on the surface of the Si substrate, depositing a p electrode on the p-AlGaN Electronic Barrier Layer (EBL), then stripping the epitaxial Si substrate to expose the n-AlGaN optical limiting layer, and then depositing an n electrode on the surface of the n-AlGaN optical limiting layer to obtain a laser epitaxial wafer;

etching a contact bonding structure on the lower surface of the SOI second substrate, wherein the contact bonding structure corresponds to the bonding metal layer in the second step;

bonding an n electrode on the epitaxial wafer of the laser device in the fourth step with the upper surface of the SOI second substrate in the fifth step to obtain a laser device chip;

and seventhly, performing surface activation on the metal bonding layer of the LED chip in the third step and the contact bonding structure of the laser chip in the sixth step, aligning, performing pre-bonding, and annealing to finally obtain the novel LED and laser integrated structure.

Preferably, in the bonding process, pressure is applied from the center of the transfer substrate of the second wafer and gradually expands towards the edge, bonding is carried out for 2h at the temperature of 300 ℃ after the bonding pressure reaches 2MPa, then annealing is carried out, the wafer is taken out and sent into an annealing furnace, and heat preservation is carried out for 30min at the temperature of 200 ℃.

Preferably, the stripping is performed by any one of mechanical thinning, chemical polishing and chemical etching.

Compared with the prior art, the technical scheme of the invention has the beneficial effects that:

the LED and laser integrated chip provided by the invention has the advantages of low LED cost and high luminous efficiency, and effectively improves the optical output power and coupling efficiency of the chip by combining the optical waveguide coupling effect of the laser.

According to the LED and laser integrated chip provided by the invention, the laser manufacturing and transferring substrate adopt a metal bonding process, the process is simple, the yield is high, and the LED and laser integrated chip is suitable for industrial production and has a good application prospect.

Drawings

Fig. 1 is a sectional view of a structure of an integrated structure of an LED and a laser in embodiment 1;

FIG. 2 is a schematic diagram of bonding an LED chip and a laser chip in alignment according to example 1;

FIG. 3 is a sectional view of an LED chip of an integrated LED and laser structure according to example 1;

FIG. 4 is a sectional view of a laser chip of an LED and laser integrated structure in accordance with example 1;

FIG. 5 is a schematic top sectional view of an electrode structure of an integrated LED and laser structure according to embodiment 1;

FIG. 6 is a graph of the light output power of the LED and laser integrated structure (LED-II) of example 1 compared to the conventional structure LED (LED-I) of comparative example 2;

FIG. 7 is a graph of the light output power of the LED and laser integrated structure (LED-III) of example 3 compared to the LED (LED-IV) of comparative example 1 (LED parallel 3X 3);

FIG. 8 is a graph of the light output power of the LED (LED-V) in comparative example 4 (LED parallel 2X 2).

Detailed Description

The invention is further described with reference to the drawings and the following examples, which are not intended to limit the invention in any way. Reagents, methods and apparatus used in the present invention are conventional in the art unless otherwise indicated.

Unless otherwise indicated, reagents and materials used in the following examples are commercially available.

Example 1

As shown in fig. 1 to 6, a novel LED and laser integrated structure includes an LED chip and a laser chip, the LED chip and the laser chip are connected through a combination region, the combination region includes an LED bonding region and a laser bonding region, the LED bonding region has a bonding metal layer 18, the laser bonding region has a contact bonding structure, and the bonding metal layer 18 is aligned with the contact bonding structure;

the LED chip sequentially comprises a conductive substrate layer 1, an AlN buffer layer 2, a u-GaN layer 3, an n-GaN layer 4, an InGaN/GaN multi-quantum well layer MQWs5, a p-GaN layer 6, a p contact reflector Ag metal and protective layer 7, a p electrode 8 and an LED bonding region from bottom to top, wherein the LED bonding region is positioned on the upper surface of the conductive substrate layer 1;

the laser chip comprises an SOI second substrate 16, an n electrode 15, an n-AlGaN optical limiting layer 14, an n-InGaN first waveguide 13, an InGaN/GaN multi-quantum well layer MQWS12, a p-InGaN second waveguide 11, a p-InGaN optical limiting layer 10, a p-AlGaN electronic barrier layer EBL9 and a p electrode 17 from bottom to top, and a laser bonding region is positioned on the lower surface of the SOI second substrate 16.

The bonding metal layer 18 is a columnar alloy of Ni and Au, and has a thickness of 500nm.

The conductive substrate 1 is a Si conductive substrate, and the thickness is 1000nm; the AlN buffer layer 2 had a thickness of 1000nm (including the thickness of the u-GaN layer 3).

The thickness of the n-GaN layer 4 is 4 μm;

the InGaN/GaN multi-quantum well layer 5 has 5 periods and the thickness of 40nm;

the thickness of the p-GaN layer 6 was 200nm.

The p-contact reflector metal and protection layer 7 comprises p-contact reflector metal and a protection layer, the reflector metal is formed by alternately growing an Ag layer and a Ni layer for 2 periods, the thickness of the Ag layer is 100nm in each period, and the thickness of the Ni layer is 25nm; the protective layer is a TiW layer with the thickness of 80nm.

The p electrode 8 is an alloy consisting of Cr and Au, has the thickness of 5 mu m, and is positioned at the top of the LED chip.

The p-AlGaN Electron Blocking Layer (EBL) 9 was 20nm thick.

The p-InGaN optical confinement layer 10 is 100nm thick.

The thickness of the p-InGaN second waveguide 11 is 300nm.

The InGaN multi-quantum well layer (MQWs) 12 was 3 periods, and was 40nm thick.

The thickness of the n-InGaN first waveguide 13 is 100nm.

The n-AlGaN light confinement layer 14 has a thickness of 20nm.

The n-electrode 15 is an alloy of Ti and Ag and has a thickness of 3 μm.

The SOI second substrate 16 is a metal substrate, which is Ni and has a thickness of 500 μm.

The p electrode 17 is an alloy consisting of Cr and Au, and the thickness of the p electrode is 3 mu m; on top of the laser chip.

A preparation method of a novel LED and laser integrated structure comprises the following preparation steps:

growing an AlN buffer layer 2, a u-GaN layer 3, an n-GaN layer 4, an InGaN/GaN multi-quantum well layer MQWs5, a p-GaN layer 6, p contact reflector metal and a protective layer 7 on the surface of a Si substrate in sequence, and depositing a p electrode 8 on the surfaces of the p contact reflector metal and the protective layer 7 to obtain an LED epitaxial wafer; the metal evaporation rate was 15 a/s.

Step two, manufacturing a bonding metal layer 18 on the upper surface of the conductive substrate 1, performing surface activation, and performing annealing treatment to obtain an LED bonding substrate;

step three, stripping the Si substrate on the LED epitaxial wafer in the step one, and bonding the exposed AlN buffer layer 2 with the region without the bonding metal layer 18 on the upper surface of the LED bonding substrate in the step two to obtain an LED chip;

step four, sequentially growing an n-AlGaN optical limiting layer 14, an n-InGaN first waveguide 13, an InGaN/GaN multi-quantum well layer MQWs12, a p-InGaN second waveguide 11, a p-InGaN optical limiting layer 10 and a p-AlGaN electronic barrier layer EBL9 on the surface of the Si substrate, depositing a p electrode 17 on the p-AlGaN electronic barrier layer EBL9, stripping the epitaxial Si substrate to expose the n-AlGaN optical limiting layer 14, and depositing an n electrode 15 on the surface of the n-AlGaN optical limiting layer 14 to obtain a laser epitaxial wafer;

step five, etching a contact bonding structure on the lower surface of the SOI second substrate 16 by adopting deep silicon, removing the bottom of the structure by selecting acid corrosion, exposing the hole bottom of the bonding structure, and enabling the contact bonding structure to correspond to the bonding metal layer 18 in the step two;

bonding the n electrode 15 on the epitaxial wafer of the laser in the step four with the upper surface of the second substrate 16 of the SOI in the step five to obtain a laser chip;

and seventhly, carrying out surface activation on the metal bonding layer 18 of the LED chip in the third step and the contact bonding structure of the laser chip in the sixth step, aligning, carrying out pre-bonding, and annealing to finally obtain a novel LED and laser integrated structure (LED-II).

And in the bonding process, pressure is applied from the center of the transfer substrate of the second wafer and gradually expanded towards the edge, bonding is carried out for 2h at the temperature of 300 ℃ after the bonding pressure reaches 2MPa, then annealing is carried out, the wafer is taken out and sent into an annealing furnace, and heat preservation is carried out for 30min at the temperature of 200 ℃.

Stripping by adopting any one of mechanical thinning, chemical polishing and chemical corrosion.

Examples 2 to 5

The technical schemes and processes of the embodiments 2 to 5 are basically the same as those of the embodiment 1, and the differences are shown in the table 1.

TABLE 1 part of the Process parameters of examples 2 to 5

Comparative example 1

The comparative example prepares an LED chip (LED-IV) which sequentially comprises a conductive substrate layer 1, an AlN buffer layer 2, a u-GaN layer 3, an n-GaN layer 4, an InGaN/GaN multi-quantum well layer MQWs5, a p-GaN layer 6, a p contact reflector Ag metal and protective layer 7, a p electrode 8 and an LED bonding region which are positioned on the upper surface of the conductive substrate layer 1 from bottom to top.

The conductive substrate 1 is a Si conductive substrate, and the thickness is 1000nm; the AlN buffer layer 2 has a thickness of 1000nm.

The thickness of the n-GaN layer 4 is 4 μm;

the InGaN/GaN multi-quantum well layer 5 has 5 periods, the thickness of a barrier layer per period is 6nm, and the thickness of the well layer is 10nm;

the thickness of the p-GaN layer 6 was 250nm.

The p-contact reflector metal and protection layer 7 comprises p-contact reflector metal and a protection layer, the reflector metal is formed by alternately growing an Ag layer and a Ni layer for 2 periods, the thickness of the Ag layer is 100nm in each period, and the thickness of the Ni layer is 35nm; the protective layer is a TiW layer with the thickness of 100nm.

The p-electrode 8 is Cr and 5 μm thick and is located on top of the LED chip.

Comparative example 2

The present comparative example provides an LED and laser integrated structure, and the difference from example 1 is mainly in the use of an LED chip. The LED chip (LED-I) in this comparative example was: a bottom-up sapphire substrate; an n-GaN layer; 5-period InGaN/GaN multi-quantum well layer; a p-GaN layer; an ITO layer. The chip is of a linear structure, and the electrodes comprise a Cr metal n electrode on an n-GaN layer and a Ti metal p electrode on ITO.

Comparative examples 3 to 4

This comparative example provides an integrated structure of an LED and a laser, and the difference from example 1 is mainly that: the p-contact mirror metal and the protective layer 7 are different in structure and thickness, as shown in table 2:

TABLE 2 part of the process parameters of comparative examples 3 to 4

	Comparative example 3	COMPARATIVE EXAMPLE 4 (LED-V)
			Thickness of the mirror metal	40nm	5500nm
Thickness of TiW layer	40nm	320nm

Analysis of Experimental data

For the performance test of an LED device, a point testing machine system of LTS-600 is used for testing electrical characteristics and optical characteristics, an integrating sphere device configured by the instrument collects light emitted by an LED through a photoelectric detector to complete optical measurement, and a Keithley2400 high-performance digital power supply is configured to measure the electrical characteristics such as working voltage, leakage current and the like of an LED chip. The point measurement aims at measuring photoelectric properties such as light output power and the like of the single embedded electrode structure LED chip and is also used for testing the performance change of the LED under the condition that a current-light power curve of the LED represents continuously-changed working current. The standard measurement used in example 1 and comparative examples 1 to 2 was set to an injection current of 50mA. The light output power of the LED chip (LED-I) of the comparative example 2 under the injection current of 60mA is only 2mW, then the current is increased to reach saturation, the light output power of the LED and laser integrated structure (LED-II) of the invention can reach 5.1mW under the injection current of 100mA, the LED and laser integrated structure bears larger injection current and higher light output power, and meanwhile, the light extraction efficiency is increased through the optical coupling inside the device, and the photoelectric performance of the chip is finally improved.

As can be seen from fig. 7, the LED chip of comparative example 1 (LED-III) showed a significant decrease in light output power at the same current as the LED-II of example 1 of the present invention. Therefore, the LED-II of the invention effectively improves the light output power and the coupling efficiency of the chip by combining the optical waveguide coupling effect of the laser.

Experimental studies have found that the photoelectric output power of examples 2 to 5 is similar to that of example 1, and a high photoelectric output power is maintained.

Experimental studies find that the optical output power of comparative examples 3 and 4 also decreases significantly, and the thickness of the visible reflector metal and the thickness of the TiW layer have significant influence on the optical output power and the coupling efficiency of the chip.

It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. The novel LED and laser integrated structure is characterized by comprising an LED chip and a laser chip, wherein the LED chip and the laser chip are connected through a combined area, the combined area comprises an LED bonding area and a laser bonding area, the LED bonding area is provided with a bonding metal layer (18), the laser bonding area is provided with a contact bonding structure, and the bonding metal layer (18) is aligned to the contact bonding structure.

2. The novel LED and laser integrated structure of claim 1, wherein the LED chip comprises a conductive substrate layer (1), an AlN buffer layer (2), a u-GaN layer (3), an n-GaN layer (4), an InGaN/GaN multi-quantum well layer (MQWs) (5), a p-GaN layer (6), a p-contact mirror metal and a protective layer (7), a p-electrode (8) from bottom to top, and the LED bonding region is positioned on the upper surface of the conductive substrate layer (1);

the laser chip comprises an SOI second substrate (16), an n electrode (15), an n-AlGaN optical limiting layer (14), an n-InGaN first waveguide (13), an InGaN/GaN multi-quantum well layer (MQWs) (12), a p-InGaN second waveguide (11), a p-InGaN optical limiting layer (10), a p-AlGaN Electronic Barrier Layer (EBL) (9) and a p electrode (17) from bottom to top, wherein a laser bonding region is positioned on the lower surface of the SOI second substrate (16).

3. The novel LED and laser integrated structure as claimed in claim 1, wherein the bonding metal layer (18) is any one of Ni, au, sn, ti, and has a thickness of 500nm-5 μm.

4. The novel integrated structure of LED and laser as claimed in claim 1, wherein the conductive substrate (1) is a Si conductive substrate with a thickness of 1000-5000nm; the AlN buffer layer (2) is 1000-3000nm thick.

5. The LED laser integrated structure according to claim 1, wherein the p-contact reflector metal and the protective layer (7) comprise a p-contact reflector metal and a protective layer, the reflector metal is composed of any one or two of Ag and Ni, and the thickness is 50-5000nm; the protective layer is a TiW layer with the thickness of 50-300nm.

6. The LED laser integrated structure according to claim 1, wherein the p-electrode (8) is one of Cr, pt, au or an alloy consisting of two or more of them, and has a thickness of 2-6 μm.

7. The integrated structure of claim 1, wherein the second SOI substrate (16) is a metal substrate, and the metal substrate is any one of Ni and Au and has a thickness of 100-500 μm.

8. The LED and laser integrated structure according to claim 1, wherein the p-electrode (17) is one of Cr, pt and Au or an alloy consisting of two or more of Cr, pt and Au, and has a thickness of 3-4 μm; the n electrode (15) is one or more of Ti, cr, ag, au and Pt, and has a thickness of 2-5 μm.

9. The preparation method of the novel LED and laser integrated structure according to any one of claims 1 to 8, characterized by comprising the following preparation steps:

growing an AlN buffer layer (2), a u-GaN layer (3), an n-GaN layer (4), an InGaN/GaN multi-quantum well layer (MQWs) (5), a p-GaN layer (6), p-contact reflector metal and a protective layer (7) on the surface of a Si substrate in sequence, and depositing a p electrode (8) on the surfaces of the p-contact reflector metal and the protective layer (7) to obtain an LED epitaxial wafer;

step two, manufacturing a bonding metal layer (18) on the upper surface of the conductive substrate (1), performing surface activation, and performing annealing treatment to obtain an LED bonding substrate;

step three, stripping the Si substrate on the LED epitaxial wafer in the step one, and bonding the exposed AlN buffer layer (2) with the region without the bonding metal layer (18) on the upper surface of the LED bonding substrate in the step two to obtain an LED chip;

sequentially growing an n-AlGaN optical limiting layer (14), an n-InGaN first waveguide (13), an InGaN/GaN multi-quantum well layer (MQWs) (12), a p-InGaN second waveguide (11), a p-InGaN optical limiting layer (10) and a p-AlGaN Electronic Barrier Layer (EBL) (9) on the surface of the Si substrate, depositing a p electrode (17) on the p-AlGaN Electronic Barrier Layer (EBL) (9), then stripping the epitaxial Si substrate to expose the n-AlGaN optical limiting layer (14), and then depositing an n electrode (15) on the surface of the n-AlGaN optical limiting layer (14) to obtain a laser epitaxial wafer;

etching a contact bonding structure on the lower surface of the SOI second substrate (16), wherein the contact bonding structure corresponds to the bonding metal layer (18) in the step two;

bonding an n electrode (15) on the epitaxial wafer of the laser device in the fourth step with the upper surface of the SOI second substrate (16) in the fifth step to obtain a laser device chip;

and seventhly, carrying out surface activation on the metal bonding layer (18) of the LED chip in the third step and the contact bonding structure of the laser chip in the sixth step, aligning, carrying out pre-bonding, and annealing to finally obtain the novel LED and laser integrated structure.

10. The method for manufacturing the novel LED and laser integrated structure according to claim 9, wherein in the bonding process, pressure is applied from the center of the transfer substrate of the second wafer and gradually expanded towards the edge, bonding is performed at 300 ℃ for 2h after the bonding pressure reaches 2MPa, then annealing is performed, the bonding is performed after the bonding is taken out, and the temperature is maintained at 200 ℃ for 30min.