CN115198257B - 一种晶圆封装的无氰沉金环保型配液及化学镀方法 - Google Patents
一种晶圆封装的无氰沉金环保型配液及化学镀方法 Download PDFInfo
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- CN115198257B CN115198257B CN202210822718.3A CN202210822718A CN115198257B CN 115198257 B CN115198257 B CN 115198257B CN 202210822718 A CN202210822718 A CN 202210822718A CN 115198257 B CN115198257 B CN 115198257B
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000000151 deposition Methods 0.000 title claims abstract description 16
- 238000007772 electroless plating Methods 0.000 title claims abstract description 8
- 238000004806 packaging method and process Methods 0.000 title description 5
- 238000007747 plating Methods 0.000 claims abstract description 72
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000010931 gold Substances 0.000 claims abstract description 51
- 229910052737 gold Inorganic materials 0.000 claims abstract description 51
- 239000002131 composite material Substances 0.000 claims abstract description 24
- 239000003112 inhibitor Substances 0.000 claims abstract description 22
- 238000002360 preparation method Methods 0.000 claims abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 21
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 15
- 239000003381 stabilizer Substances 0.000 claims abstract description 14
- 238000005538 encapsulation Methods 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 13
- 239000002270 dispersing agent Substances 0.000 claims abstract description 8
- 239000008139 complexing agent Substances 0.000 claims abstract description 7
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 claims description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- SDKPSXWGRWWLKR-UHFFFAOYSA-M sodium;9,10-dioxoanthracene-1-sulfonate Chemical compound [Na+].O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)[O-] SDKPSXWGRWWLKR-UHFFFAOYSA-M 0.000 claims description 22
- 239000000126 substance Substances 0.000 claims description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 19
- 239000010936 titanium Substances 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- DPWJHXHCEHPXGF-UHFFFAOYSA-N [amino(sulfanyl)methylidene]azanium;propane-1-sulfonate Chemical compound NC(S)=[NH2+].CCCS([O-])(=O)=O DPWJHXHCEHPXGF-UHFFFAOYSA-N 0.000 claims description 17
- 150000003839 salts Chemical class 0.000 claims description 17
- 239000002253 acid Substances 0.000 claims description 16
- 239000004201 L-cysteine Substances 0.000 claims description 15
- 235000013878 L-cysteine Nutrition 0.000 claims description 15
- 238000001556 precipitation Methods 0.000 claims description 15
- 238000005406 washing Methods 0.000 claims description 15
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 12
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 12
- IPCRBOOJBPETMF-UHFFFAOYSA-N N-acetylthiourea Chemical compound CC(=O)NC(N)=S IPCRBOOJBPETMF-UHFFFAOYSA-N 0.000 claims description 11
- YZMHQCWXYHARLS-UHFFFAOYSA-N naphthalene-1,2-disulfonic acid Chemical compound C1=CC=CC2=C(S(O)(=O)=O)C(S(=O)(=O)O)=CC=C21 YZMHQCWXYHARLS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- ZWZLRIBPAZENFK-UHFFFAOYSA-J sodium;gold(3+);disulfite Chemical group [Na+].[Au+3].[O-]S([O-])=O.[O-]S([O-])=O ZWZLRIBPAZENFK-UHFFFAOYSA-J 0.000 claims description 11
- YTQVHRVITVLIRD-UHFFFAOYSA-L thallium sulfate Chemical compound [Tl+].[Tl+].[O-]S([O-])(=O)=O YTQVHRVITVLIRD-UHFFFAOYSA-L 0.000 claims description 11
- 229940119523 thallium sulfate Drugs 0.000 claims description 11
- 229910000374 thallium(I) sulfate Inorganic materials 0.000 claims description 11
- ZHROMWXOTYBIMF-UHFFFAOYSA-M sodium;1,3,7,9-tetratert-butyl-11-oxido-5h-benzo[d][1,3,2]benzodioxaphosphocine 11-oxide Chemical group [Na+].C1C2=CC(C(C)(C)C)=CC(C(C)(C)C)=C2OP([O-])(=O)OC2=C1C=C(C(C)(C)C)C=C2C(C)(C)C ZHROMWXOTYBIMF-UHFFFAOYSA-M 0.000 claims description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- ZOOODBUHSVUZEM-UHFFFAOYSA-N ethoxymethanedithioic acid Chemical compound CCOC(S)=S ZOOODBUHSVUZEM-UHFFFAOYSA-N 0.000 claims description 9
- 238000001914 filtration Methods 0.000 claims description 9
- 238000003760 magnetic stirring Methods 0.000 claims description 9
- 239000012991 xanthate Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 6
- 239000012190 activator Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- QJAOYSPHSNGHNC-UHFFFAOYSA-N octadecane-1-thiol Chemical group CCCCCCCCCCCCCCCCCCS QJAOYSPHSNGHNC-UHFFFAOYSA-N 0.000 claims description 6
- 239000002244 precipitate Substances 0.000 claims description 6
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 claims description 6
- DGSDBJMBHCQYGN-UHFFFAOYSA-M sodium;2-ethylhexyl sulfate Chemical group [Na+].CCCCC(CC)COS([O-])(=O)=O DGSDBJMBHCQYGN-UHFFFAOYSA-M 0.000 claims description 6
- 229910021505 gold(III) hydroxide Inorganic materials 0.000 claims description 5
- WDZVNNYQBQRJRX-UHFFFAOYSA-K gold(iii) hydroxide Chemical compound O[Au](O)O WDZVNNYQBQRJRX-UHFFFAOYSA-K 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- UUUGYDOQQLOJQA-UHFFFAOYSA-L vanadyl sulfate Chemical group [V+2]=O.[O-]S([O-])(=O)=O UUUGYDOQQLOJQA-UHFFFAOYSA-L 0.000 claims description 4
- 229940041260 vanadyl sulfate Drugs 0.000 claims description 4
- 229910000352 vanadyl sulfate Inorganic materials 0.000 claims description 4
- 125000001376 1,2,4-triazolyl group Chemical group N1N=C(N=C1)* 0.000 claims description 3
- PWKSKIMOESPYIA-UHFFFAOYSA-N 2-acetamido-3-sulfanylpropanoic acid Chemical group CC(=O)NC(CS)C(O)=O PWKSKIMOESPYIA-UHFFFAOYSA-N 0.000 claims description 3
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 3
- 238000001479 atomic absorption spectroscopy Methods 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229940073609 bismuth oxychloride Drugs 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 238000004090 dissolution Methods 0.000 claims description 3
- 239000012065 filter cake Substances 0.000 claims description 3
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 3
- 229940046892 lead acetate Drugs 0.000 claims description 3
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 claims description 3
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims description 3
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- BWOROQSFKKODDR-UHFFFAOYSA-N oxobismuth;hydrochloride Chemical compound Cl.[Bi]=O BWOROQSFKKODDR-UHFFFAOYSA-N 0.000 claims description 3
- DCKVFVYPWDKYDN-UHFFFAOYSA-L oxygen(2-);titanium(4+);sulfate Chemical compound [O-2].[Ti+4].[O-]S([O-])(=O)=O DCKVFVYPWDKYDN-UHFFFAOYSA-L 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 claims description 3
- 229940074439 potassium sodium tartrate Drugs 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 238000004321 preservation Methods 0.000 claims description 3
- 239000000376 reactant Substances 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 229910001379 sodium hypophosphite Inorganic materials 0.000 claims description 3
- 235000011006 sodium potassium tartrate Nutrition 0.000 claims description 3
- ZDQYSKICYIVCPN-UHFFFAOYSA-L sodium succinate (anhydrous) Chemical compound [Na+].[Na+].[O-]C(=O)CCC([O-])=O ZDQYSKICYIVCPN-UHFFFAOYSA-L 0.000 claims description 3
- 235000010265 sodium sulphite Nutrition 0.000 claims description 3
- 238000000967 suction filtration Methods 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 238000003786 synthesis reaction Methods 0.000 claims description 3
- UEUXEKPTXMALOB-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O UEUXEKPTXMALOB-UHFFFAOYSA-J 0.000 claims description 3
- 229910000348 titanium sulfate Inorganic materials 0.000 claims description 3
- 230000004075 alteration Effects 0.000 abstract description 3
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 2
- JAJIPIAHCFBEPI-UHFFFAOYSA-N 9,10-dioxoanthracene-1-sulfonic acid Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)O JAJIPIAHCFBEPI-UHFFFAOYSA-N 0.000 abstract 1
- 230000009467 reduction Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 5
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 229940047051 vanadyl sulfate 10 mg Drugs 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 206010028980 Neoplasm Diseases 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 239000000427 antigen Substances 0.000 description 2
- 102000036639 antigens Human genes 0.000 description 2
- 108091007433 antigens Proteins 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- JHXKRIRFYBPWGE-UHFFFAOYSA-K bismuth chloride Chemical compound Cl[Bi](Cl)Cl JHXKRIRFYBPWGE-UHFFFAOYSA-K 0.000 description 2
- GLQBXSIPUULYOG-UHFFFAOYSA-M bismuth oxychloride Chemical compound Cl[Bi]=O GLQBXSIPUULYOG-UHFFFAOYSA-M 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000009918 complex formation Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- MXZVHYUSLJAVOE-UHFFFAOYSA-N gold(3+);tricyanide Chemical compound [Au+3].N#[C-].N#[C-].N#[C-] MXZVHYUSLJAVOE-UHFFFAOYSA-N 0.000 description 2
- LELOWRISYMNNSU-UHFFFAOYSA-N hydrogen cyanide Chemical compound N#C LELOWRISYMNNSU-UHFFFAOYSA-N 0.000 description 2
- 239000012669 liquid formulation Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G7/00—Compounds of gold
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1862—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by radiant energy
- C23C18/1868—Radiation, e.g. UV, laser
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Inorganic Chemistry (AREA)
- Chemically Coating (AREA)
Abstract
本发明公开了一种晶圆封装的无氰沉金环保型配液及化学镀方法。该配液包括以下质量浓度的组分:金盐2‑15g/L、复合加速剂30‑60mg/L、络合剂5‑20g/L、晶核细化剂20‑60mg/L、还原剂20‑60mg/L、稳定剂30‑90mg/L、复合抑制剂5‑15mg/L、分散剂35‑70mg/L、去极化剂10‑30mg/L。该发明得到的金镀层无色差,致密平整,无脆性折镀及裂纹等现象,金缸稳定性优良达到半年以上不会出现发红等问题,本配方所采用的试剂均属环保型。
Description
技术领域
本发明涉及化学镀金技术领域,尤其涉及一种应用于晶圆级封装的无氰沉金配方及其沉金工艺。
背景技术
金具有优异的防变色能力、可焊性和导电性,广泛应用于电子行业,因其保持时间长深受各大商家的喜爱,尤其在高精密度的晶圆级化学镀表面处理等方面局具有很大优势。
目前市场上应用较多的仍然是氰化镀金,氰化镀金稳定性好,化学镀过程中分散性好,但是在酸性条件体系中,氰化物易挥发成剧毒氰化氢,对环境和工人的安全存在巨大安全隐患,研究无氰沉金形势严峻,然而目前具有无氰沉金镀液均存在稳定性差,易变色等问题。
另外,在专利CN101906649B和专利CN113416987A等研究者均以氯金酸为金盐,由于氯金酸是三价金,其氧化能力强和稳定性弱,一方面会与镍直接发生置换,导致镍腐蚀严重,另一方面,氯金酸酸度高且含有大量氯离子,会对设备,基材包括镍层等造成腐蚀十分严重,进而影响整个产品性能。
因此,为了顺应环保需求,同时满足工业生产,本发明提出一种既环保又稳定,且能得到优异的沉金层的配方及化学镀方法。
发明内容
针对上述技术中存在的不足之处,本发明提供一种晶圆封装的无氰沉金环保型配液及化学镀方法,该发明得到的金镀层无色差,致密平整,无脆性折镀,有裂纹等现象,金缸稳定性优良达到半年以上均不会出现发红等问题。
为实现上述目的,本发明提供了一种晶圆封装的无氰沉金环保型配液,包括以下质量浓度的组分:
金盐2-15g/L、复合加速剂30-60mg/L、络合剂5- 20g/L、晶核细化剂 20-60mg/L、还原剂20-60mg/L、稳定剂30-90mg/L、复合抑制剂5-15mg/L、分散剂35-70mg/L、去极化剂10-30mg/L
pH为6.0-7.0
操作温度25-35℃
所述复合抑制剂为异硫脲丙磺酸内盐、黄原酸乙酯-S-丙烷磺酸的复合物, 在使用时异硫脲丙磺酸内盐、黄原酸乙酯-S-丙烷磺酸的质量浓度比为2:1,异硫脲丙磺酸内盐20-40mg/L、黄原酸乙酯-S-丙烷磺酸10-20mg/L,采用复合抑制剂之间的协同效果可以极大提高镀层的均匀平整性,解决单一抑制剂局限性;
所述复合加速剂为乙酰硫脲、硫酸铊和萘二磺酸复合物,且三者在使用时的质量浓度比为1:1:1,采用复合加速剂不仅可以加速金的沉积还原,同时提高金催化活性,促使金不断被持续还原;
所述pH控制由质量浓度5%的氢氧化钠和体积浓度5%浓硫酸的溶液进行调节;
所述分散剂为2-乙基己基硫酸钠;所述络合剂为1,2,4-三氮唑。
其中,所述稳定剂为十八烷基硫醇;所述去极化剂为硫酸氧钒;所述金盐为亚硫酸金钠。
其中,所述晶核细化剂为2,2'-亚甲基-双(4,6-二叔丁基苯基) 磷酸酯钠;所述还原剂为L-半胱氨酸,且二者在使用时的质量浓度比为1:1,可以均匀促进新晶核生长位点,在抑制剂的协同下起到高致密平整镀金层生长。
其中,该金盐的制备方法如下(1g氯金酸为例):
第一:制备氢氧化金,将1g氯金酸溶解得到浓度为1g/L的溶液,加入高纯度大于99.9%的氧化铋3g左右,并可见白色和褐色的沉淀混合物;
第二:制备亚硫酸金钠,将步骤一得到沉淀混合物溶液进行过滤,过滤得到的滤饼加入到50毫升40g/L亚硫酸钠溶液中,在磁力搅拌下进行反应;
第三:通过抽滤方法将未反应的氯氧化铋沉淀物过滤,原反应物溶液加入0.02gEDTA-4Na作为稳定剂进行保存;
第四:原子吸收光谱分析亚硫酸金钠的合成率达95%。
其中,在金盐制备方法中步骤第一的具体条件为:氯金酸溶解过程中需要在磁力搅拌下进行,转速30转每分钟,温度常温,氧化铋以粉末形式通过直径为1mm口径漏斗垂直由上向下缓慢加入,其目的是防止形成氯化铋配合物。
其中,在金盐制备方法中第二步骤中具体条件是:磁力搅拌的速度为每分钟50-70转,温度设置在50-60℃,时间控制在20-30min。
本发明还提供了一种晶圆封装的无氰沉金化学镀方法,其具体步骤如下:
步骤1:基体前处理,包括镀件依次通过微蚀、纯水水洗、激光清洗、纯水水洗、氮气排氧、纯水水洗;
步骤2:镀件进入化学镀镍槽进行化学镀镍,保持常温;
步骤3:镀件经过纯水清洗三遍后再通过含铅活化剂的活化槽进行活化处理;
步骤4:活化后的镀件通过化学镀钛预镀一层阻挡层钛再经过纯水水洗;
步骤5:在氮气保护下,镀件进入装有由上述的环保型配液的沉金槽内进行沉金至完成。
其中,步骤1中激光清洗具体条件是:激光功率50w,激光波长1064nm,脉冲频率50-250KHz,环境湿度小于90%。
其中,步骤3中铅活化剂具体条件是:温度50-60℃,时间1-3min,其铅活化剂的组分包括稳定剂琥珀酸二钠0.08g/L和酒石酸钾钠0.15g/L,醋酸铅20mg/L以及协同剂三氯化铁30mg/L。
其中,步骤4中化学镀钛的具体条件是:温度80-90℃,时间20-30min,镀液pH保持在5.4-6.0,沉积速率在0.15-0.2μm/30min,化学镀钛的镀钛液包括硫酸钛1g/L、硫酸镍0.05g/L、次亚磷酸钠2g/L、聚乙二醇1000 0.05g/L、异硫脲丙磺酸内盐0.02g/L,该化学镀钛液不仅稳定性、分散性好,而且还形成钛镍合金微层,使得金在沉积过程中更加致密紧簇。
本发明的有益效果是:与现有技术相比,本发明提供的一种晶圆封装的无氰沉金环保型配液及化学镀方法,存在以下优势:
1)金盐的制备过程中采用氧化铋去除氯离子原理,可以极大提高氢氧化金的转化率,从而实现高产量的亚硫酸金钠的制备,氧化铋成本低,温度设备要求低,且氧化铋在还可以回收利用,成本低且环保。
2)本发明中,采用复合抑制剂为异硫脲丙磺酸内盐、黄原酸乙酯-S-丙烷磺酸的复合物和复合加速剂为乙酰硫脲、硫酸铊和萘二磺酸复合物,且三者在使用时的质量浓度比为1:1:1及复合抑制剂可以决定晶面在金属表面的定向,由于金属表面的不均匀性,抑制剂可以优先吸附在沉积速率较大地晶面,采用复合加速剂不仅可以加速金的沉积还原,在抑制剂的协同下起到高致密平整镀金层生长。
3)本发明在化学镀镍前处理采用激光清洗,与传统化学清洗相比较具有环保优势,无磨损,无热效应,控制力度好,效率高等优势,不会因为有化学残留导致后续表面处理,化学清洗过程中表面活性剂吸附能力强,对于晶圆级清洗处理往往难免存在残留现象,激光清洗可以大大改善良率。
4)本发明的沉金镀液中还采用晶核细化剂2,2'-亚甲基-双(4,6-二叔丁基苯基)磷酸酯钠和还原剂L-半胱氨酸进行配比,且二者在使用时的质量浓度比为1:1,该二者在沉金过程可以均匀促进新晶核生长位点,提高金催化活性,促使金不断被持续还原。
5)本发明采用的化学镀工艺改进主要是在镀件经过镀镍之后镀上钛,来增加抗腐蚀性和抗原子互扩性,从而提高基体的使用寿命。
附图说明
图1为本发明三个实施例与对比实施例的实验测试结果图。
实施方式
为了更清楚地表述本发明,下面根据文字及附图对本发明作进一步地描述。
为实现上述目的,本发明提供了一种晶圆封装的无氰沉金环保型配液,包括以下质量浓度的组分:
金盐2-15g/L、复合加速剂30-60mg/L、络合剂5- 20g/L、晶核细化剂 20-60mg/L、还原剂20-60mg/L、稳定剂30-90mg/L、复合抑制剂5-15mg/L、分散剂35-70mg/L、去极化剂10-30mg/L
pH为6.0-7.0
操作温度25-35℃
所述复合抑制剂为异硫脲丙磺酸内盐、黄原酸乙酯-S-丙烷磺酸的复合物, 在使用时异硫脲丙磺酸内盐、黄原酸乙酯-S-丙烷磺酸的质量浓度比为2:1,异硫脲丙磺酸内盐20-40mg/L、黄原酸乙酯-S-丙烷磺酸10-20mg/L;
所述复合加速剂为乙酰硫脲、硫酸铊和萘二磺酸复合物,且三者在使用时的质量浓度比为1:1:1;
所述pH控制由质量浓度5%的氢氧化钠和体积浓度5%浓硫酸的溶液进行调节;
所述分散剂为2-乙基己基硫酸钠;所述络合剂为1,2,4-三氮唑。
在本实施例中,所述稳定剂为十八烷基硫醇;所述去极化剂为硫酸氧钒;所述金盐为亚硫酸金钠。
在本实施例中,所述晶核细化剂为2,2'-亚甲基-双(4,6-二叔丁基苯基) 磷酸酯钠;所述还原剂为L-半胱氨酸,且二者在使用时的质量浓度比为1:1,可以均匀促进新晶核生长位点,在抑制剂的协同下起到高致密平整镀金层生长。
在本实施例中,该金盐的制备方法如下(1g氯金酸为例):
第一:制备氢氧化金,将1g氯金酸溶解得到浓度为1g/L的溶液,加入高纯度大于99.9%的氧化铋3g左右,并可见白色和褐色的沉淀混合物;
第二:制备亚硫酸金钠,将步骤一得到沉淀混合物溶液进行过滤,过滤得到的滤饼加入到50毫升40g/L亚硫酸钠溶液中,在磁力搅拌下进行反应;
第三:通过抽滤方法将未反应的氯氧化铋沉淀物过滤,原反应物溶液加入0.02gEDTA-4Na作为稳定剂进行保存;
第四:原子吸收光谱分析亚硫酸金钠的合成率达95%。
其中,在金盐制备方法中步骤第一的具体条件为:氯金酸溶解过程中需要在磁力搅拌下进行,转速30转每分钟,温度常温,氧化铋以粉末形式通过直径为1mm口径漏斗垂直由上向下缓慢加入,其目的是防止形成氯化铋配合物。
在本实施例中,在金盐制备方法中第二步骤中具体条件是:磁力搅拌的速度为每分钟50-70转,温度设置在50-60℃,时间控制在20-30min。
本发明还提供了一种晶圆封装的无氰沉金化学镀方法,其具体步骤如下:
步骤1:基体前处理,包括镀件依次通过微蚀、纯水水洗、激光清洗、纯水水洗、氮气排氧、纯水水洗;
步骤2:镀件进入化学镀镍槽进行化学镀镍,保持常温;
步骤3:镀件经过纯水清洗三遍后再通过含铅活化剂的活化槽进行活化处理;
步骤4:活化后的镀件通过化学镀钛预镀一层阻挡层钛再经过纯水水洗;
步骤5:在氮气保护下,镀件进入装有上述的环保型配液的沉金槽内进行沉金至完成。
在本实施例中,步骤1中激光清洗具体条件是:激光功率50w,激光波长1064nm,脉冲频率50-250KHz,环境湿度小于90%。
在本实施例中,步骤3中铅活化剂具体条件是:温度50-60℃,时间1-3min,其铅活化剂的组分包括稳定剂琥珀酸二钠0.08g/L和酒石酸钾钠0.15g/L,醋酸铅20mg/L以及协同剂三氯化铁30mg/L。
在本实施例中,步骤4中化学镀钛的具体条件是:温度80-90℃,时间20-30min,镀液pH保持在5.4-6.0,沉积速率在0.15-0.2μm/30min,化学镀钛的镀钛液包括硫酸钛1g/L、硫酸镍0.05g/L、次亚磷酸钠2g/L、聚乙二醇1000 0.05g/L、异硫脲丙磺酸内盐0.02g/L,该化学镀钛液不仅稳定性、分散性好,而且还形成钛镍合金微层,使得金在沉积过程中更加致密紧簇。
本发明的有益效果是:与现有技术相比,本发明提供的一种晶圆封装的无氰沉金环保型配液及化学镀方法,存在以下优势:
1)金盐的制备过程中采用氧化铋去除氯离子原理,可以极大提高氢氧化金的转化率,从而实现高产量的亚硫酸金钠的制备,氧化铋成本低,温度设备要求低,且氧化铋在还可以回收利用,成本低且环保。
2)本发明中,采用复合抑制剂为异硫脲丙磺酸内盐、黄原酸乙酯-S-丙烷磺酸的复合物和复合加速剂为乙酰硫脲、硫酸铊和萘二磺酸复合物,且三者在使用时的质量浓度比为1:1:1及复合抑制剂可以决定晶面在金属表面的定向,由于金属表面的不均匀性,抑制剂可以优先吸附在沉积速率较大地晶面,采用复合加速剂不仅可以加速金的沉积还原,在抑制剂的协同下起到高致密平整镀金层生长。
3)本发明在化学镀镍前处理采用激光清洗,与传统化学清洗相比较具有环保优势,无磨损,无热效应,控制力度好,效率高等优势,不会因为有化学残留导致后续表面处理,化学清洗过程中表面活性剂吸附能力强,对于晶圆级清洗处理往往难免存在残留现象,激光清洗可以大大改善良率。
4)本发明的沉金镀液中还采用晶核细化剂2,2'-亚甲基-双(4,6-二叔丁基苯基)磷酸酯钠和还原剂L-半胱氨酸进行配比,且二者在使用时的质量浓度比为1:1,该二者在沉金过程可以均匀促进新晶核生长位点,提高金催化活性,促使金不断被持续还原。
5)本发明采用的化学镀工艺改进主要是在镀件经过镀镍之后镀上钛,来增加抗腐蚀性和抗原子互扩性,从而提高基体的使用寿命。
以下为本发明的几个具体实施例
实验测试评判标准如下:
1、以五片基材作为测试对象比较外观光亮性金瘤,均匀性作为比较,由此可得:极值与平均值的比值在0-5%内,且光亮无金瘤为优;极值与平均值的比值在5-10%内,光亮,偶见少许金瘤为良;极值与平均值的比值在10-15%内且颜色稍微发暗,有明显金瘤产生为较差;极值与平均值的比值在15-25%内发黑,有色差为差;极值与平均值的比值在25%以上为很差。
2、实验量为5片,表面有无折镀裂痕现象,致密平整无裂纹折镀为优;偶见细微裂纹,非常小要在3000倍SEM才能观察到的为良;裂纹较大一般放大1000倍可见为较差;圆柱上金面裂纹较多,500倍可见为差;金面发裂纹200倍及以下可见为很差。
3、金缸稳定性,实验量为5个槽液,正常开槽使用,时间周期为半年,优表示半年内溶液清澈透明,不变色;良表示半年内溶液清澈,但是槽壁上稍有红色固体析出;较差表示半年内溶液有点发红;差表示半年内溶液明显发红,且浑浊很差表示半年内溶液浑浊变色严重。
实施例
一种晶圆封装的无氰沉金环保型配液,以每升槽液计:
金盐 2g/L
异硫脲丙磺酸内盐 20mg/L、
黄原酸乙酯-S-丙烷磺酸 10mg/L
乙酰硫脲 5mg/L
硫酸铊 5mg/L
萘二磺酸 5mg/L
2-乙基己基硫酸钠 35mg/L
1,2,4-三氮唑 5g/L
十八烷基硫醇 30mg/L
2,2'-亚甲基-双(4,6-二叔丁基苯基) 磷酸酯钠20mg/L
L-半胱氨酸 20mg/L
硫酸氧钒 10mg/L
余量为水
pH为6.5
操作温度30℃
时间30min
通过图1可以看出:在实施例1中,得到测试结果为:沉金层均匀性光亮性优,折镀裂纹为优,金缸稳定性为优。
实施例
一种晶圆封装的无氰沉金环保型配液,以每升槽液计:
金盐 6g/L
异硫脲丙磺酸内盐 30mg/L、
黄原酸乙酯-S-丙烷磺酸 15mg/L
乙酰硫脲 10mg/L
硫酸铊 10mg/L
萘二磺酸 10mg/L
2-乙基己基硫酸钠 40mg/L
1,2,4-三氮唑 10g/L
十八烷基硫醇 30mg/L
2,2'-亚甲基-双(4,6-二叔丁基苯基) 磷酸酯钠40mg/L
L-半胱氨酸 40mg/L
硫酸氧钒 10mg/L
余量为水
pH为6
操作温度30℃
时间30min
通过图1可以看出:在实施例2中,得到测试结果为:沉金层均匀性光亮性优,折镀裂纹为优,金缸稳定性为优。
实施例
一种晶圆封装的无氰沉金环保型配液,以每升槽液计:
金盐 2g/L
异硫脲丙磺酸内盐 20mg/L、
黄原酸乙酯-S-丙烷磺酸 10mg/L
乙酰硫脲 15mg/L
硫酸铊 15mg/L
萘二磺酸 15mg/L
2-乙基己基硫酸钠 60mg/L
1,2,4-三氮唑 5g/L
十八烷基硫醇 30mg/L
2,2'-亚甲基-双(4,6-二叔丁基苯基) 磷酸酯钠60mg/L
L-半胱氨酸 60mg/L
硫酸氧钒 10mg/L
余量为水
pH为6.5
操作温度30℃
时间30min
通过图1可以看出:在实施例3中,得到测试结果为:沉金层均匀性光亮性优,折镀裂纹为优,金缸稳定性为优。
对比例
一种晶圆封装的无氰沉金环保型配液,以每升槽液计:
金盐 2g/L
1,2,4-三氮唑 5g/L
硫酸氧钒 20mg/L
余量为水
pH为6.5
操作温度30℃
时间30min
通过图1可以看出:在对比例中,与实施例相比,对比例缺少稳定剂、分散剂、加速剂以及抑制剂、还原剂和晶核细化剂,得到测试结果为沉金层均匀性光亮性差,折镀裂纹为差,金缸稳定性为差。
上述的三个本案实施例子和对比实施例进行对比可以看出,该发明得到的金镀层没有色差,镀层致密、平整,不会发生脆性折镀,有裂纹等现象,而且金缸稳定性优良达到半年内不会出现浑浊、变色等问题,本配方所采用的的试剂均属环保型。
以上公开的仅为本发明的实施例,但是本发明并非局限于此,任何本领域的技术人员能思之的变化都应落入本发明的保护范围。
Claims (3)
1.一种晶圆封装的无氰沉金环保型配液,其特征在于,包括以下质量浓度的组分:
金盐2-15g/L、复合加速剂30-60mg/L、络合剂5- 20g/L、晶核细化剂 20-60mg/L、还原剂20-60mg/L、稳定剂30-90mg/L、复合抑制剂5-15mg/L、分散剂35-70mg/L、去极化剂10-30mg/L;
pH为6.0-7.0
所述复合抑制剂为异硫脲丙磺酸内盐、黄原酸乙酯-S-丙烷磺酸的复合物, 在使用时异硫脲丙磺酸内盐、黄原酸乙酯-S-丙烷磺酸的质量浓度比为2:1,且异硫脲丙磺酸内盐20-40mg/L、黄原酸乙酯-S-丙烷磺酸10-20mg/L;
所述复合加速剂为乙酰硫脲、硫酸铊和萘二磺酸复合物,且三者在使用时的质量浓度比为1:1:1;
所述pH控制由质量浓度10%的氢氧化钠和体积浓度10%浓硫酸的溶液进行调节;
所述分散剂为2-乙基己基硫酸钠;所述络合剂为1,2,4-三氮唑;
所述稳定剂为十八烷基硫醇;所述去极化剂为硫酸氧钒;所述金盐为亚硫酸金钠;所述晶核细化剂为2,2'-亚甲基-双(4,6-二叔丁基苯基) 磷酸酯钠;所述还原剂为L-半胱氨酸,且二者在使用时的质量浓度比为1:1。
2.根据权利要求1所述的一种晶圆封装的无氰沉金环保型配液,其特征在于,该金盐的制备方法如下,以1g氯金酸计:
第一:制备氢氧化金,将1g氯金酸溶解得到浓度为1g/L的溶液,加入纯度大于99.9%的高纯度氧化铋3g左右,并可见白色和褐色的沉淀混合物;
第二:制备亚硫酸金钠,将步骤一得到沉淀混合物溶液进行过滤,过滤得到的滤饼加入到50毫升40g/L亚硫酸钠溶液中,在磁力搅拌下进行反应;
第三:通过抽滤方法将未反应的氯氧化铋沉淀物过滤,原反应物溶液加入0.02g EDTA-4Na作为稳定剂进行保存;
第四:原子吸收光谱分析亚硫酸金钠的合成率达95%;
金盐制备方法中的第一步骤具体条件为:氯金酸溶解过程中需要在磁力搅拌下进行,转速30转每分钟,温度常温,氧化铋以粉末形式通过直径为1mm口径漏斗垂直由上向下缓慢加入;
金盐制备方法中的第二步骤中具体条件是:磁力搅拌的速度为每分钟50-70转,温度设置在50-60℃,时间控制在20-30min。
3.一种晶圆封装的无氰沉金化学镀方法,其特征在于,该化学镀方法具体步骤如下:
步骤1:基体前处理,包括镀件依次通过微蚀、纯水水洗、激光清洗、纯水水洗、氮气排氧、纯水水洗;
步骤2:镀件进入沉镍槽进行化学镀镍,保持常温;
步骤3:镀件经过纯水清洗三遍后再通过含铅活化剂的活化槽进行活化处理;
步骤4:活化后的镀件通过化学镀钛预镀一层阻挡层钛再经过纯水水洗;
步骤5:在氮气保护下,镀件进入装有由权利要求1-2任一项所述的环保型配液的沉金槽内进行沉金至完成;
步骤1中激光清洗具体条件是:激光功率50w,激光波长1064nm,脉冲频率50-250KHz,环境湿度小于90%;
步骤3中使用铅活化剂具体条件是:温度50-60℃,时间1-3min,其铅活化剂的组分包括稳定剂琥珀酸二钠0.08g/L和酒石酸钾钠0.15g/L,醋酸铅20mg/L以及协同剂三氯化铁30mg/L;
步骤4中化学镀钛的具体条件是:温度80-90℃,时间20-30min,镀液pH保持在5.4-6.0,沉积速率在0.15-0.2μm/30min,化学镀钛的镀钛液包括硫酸钛1g/L、硫酸镍0.05g/L、次亚磷酸钠2g/L、聚乙二醇10000.05g/L、异硫脲丙磺酸内盐0.02g/L。
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