CN115172291A - HTCC structure with micro-channels - Google Patents
HTCC structure with micro-channels Download PDFInfo
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- CN115172291A CN115172291A CN202210892619.2A CN202210892619A CN115172291A CN 115172291 A CN115172291 A CN 115172291A CN 202210892619 A CN202210892619 A CN 202210892619A CN 115172291 A CN115172291 A CN 115172291A
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- Prior art keywords
- cooling liquid
- heat dissipation
- htcc
- ceramic substrate
- liquid inlet
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- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical group CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 title claims abstract 13
- 230000017525 heat dissipation Effects 0.000 claims abstract description 59
- 239000000919 ceramic Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000007788 liquid Substances 0.000 claims abstract description 20
- 239000002826 coolant Substances 0.000 claims abstract description 6
- 230000008676 import Effects 0.000 claims abstract description 3
- 239000000110 cooling liquid Substances 0.000 claims description 70
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 238000001816 cooling Methods 0.000 claims description 8
- 238000005452 bending Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract description 4
- 238000004088 simulation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses an HTCC structure with a micro-channel, and relates to the technical field of microwave devices. The structure includes ceramic substrate, ceramic substrate's front is provided with the chip mounting region, every be formed with a heat dissipation runner manifold group in the ceramic substrate at the chip mounting region back, heat dissipation runner manifold group includes a plurality of heat dissipation runner manifold, is formed with a coolant liquid import and a coolant liquid export on every heat dissipation runner manifold. The structure adopts the embedded microchannel structure of ceramic substrate, and the radiating efficiency is higher, and it is littleer to occupy the volume, realizes high density integration more easily, and the radiating effect is better, and whole circuit performance is better.
Description
Technical Field
The invention relates to the technical field of microwave devices, in particular to an HTCC structure with a micro-channel.
Background
Ceramic packages are widely used in radio frequency structures due to their high mechanical strength and excellent microwave performance. The high temperature co-fired ceramic (HTCC) also has high heat dissipation capacity, good air tightness and relatively mature process, and is commonly used in aerospace, military equipment and various electronic consumer markets. HTCC structure mainly used radio frequency multi-chip module and high density interconnection need consider the heat dissipation problem in the design, and the structure among the prior art generally adopts forced air cooling and natural cooling's mode to cool down and handles, causes the cooling effect not good.
Disclosure of Invention
The invention aims to solve the technical problem of how to provide a micro-channel structure based on HTCC (hyper text transport communication channel) with good heat dissipation effect and small volume, thereby effectively solving the problem of heat management of a radio frequency micro-system in a high-power scene. In order to solve the technical problems, the technical scheme adopted by the invention is as follows: an HTCC structure having micro flow channels, comprising: including ceramic substrate, ceramic substrate's front is provided with the chip mounting area, every be formed with a heat dissipation runner manifold group in the ceramic substrate at the chip mounting area back, heat dissipation runner manifold group includes a plurality of heat dissipation runner manifold, is formed with a coolant liquid import and a coolant liquid export on every heat dissipation runner manifold.
The further technical scheme is as follows: the HTCC structure also comprises a metal bottom plate positioned on the outer side of the ceramic substrate, wherein a cooling liquid inlet groove and a cooling liquid outlet groove are formed on the upper surface of the metal bottom plate, and the cooling liquid inlet groove is not communicated with the cooling liquid outlet groove; after the metal bottom plate is fixed to the back surface of the ceramic substrate, a cooling liquid inlet channel is formed between the cooling liquid inlet groove and the ceramic substrate, a cooling liquid outlet channel is formed between the cooling liquid outlet groove and the ceramic substrate, a liquid inlet with an opening positioned on the outer side is formed on the cooling liquid inlet channel, cooling liquid inlets on all heat dissipation runner manifolds are communicated together through the cooling liquid inlet channel, a liquid outlet with an opening positioned on the outer side is formed on the cooling liquid outlet channel, and cooling liquid outlets on all heat dissipation runner manifolds are communicated together through the cooling liquid outlet channel; the cooling liquid enters the cooling liquid inlet flow channel through the liquid inlet, then flows into the heat dissipation flow channel manifold through the cooling liquid inlet flow channel, and the cooling liquid in the heat dissipation flow channel manifold is discharged, then enters the cooling liquid outlet flow channel and then is discharged into the cooling source.
The further technical scheme is as follows: the cooling liquid outlet and the cooling liquid inlet on the heat dissipation runner manifold are arranged towards the outer side, and the main body of the heat dissipation runner manifold is arranged in a bending mode.
The further technical scheme is as follows: the heat dissipation runner manifolds are arranged independently.
The further technical scheme is as follows: the main body of the heat dissipation runner manifold is arranged in a left-right bending mode or an up-down bending mode.
The further technical scheme is as follows: the front surface of the ceramic substrate is provided with a plurality of open cavities to form the chip mounting area, and the chip is positioned in the open cavities.
Preferably, the heat dissipation runner manifold group is positioned at the lower side of the high-power chip.
Preferably, the metal bottom plate and the ceramic substrate are welded by silver and copper.
Preferably, the cooling liquid inlet groove and the cooling liquid outlet groove are integrally formed into a U-shaped groove.
The further technical scheme is as follows: the heat dissipation runner manifolds are communicated in parallel.
Adopt the produced beneficial effect of above-mentioned technical scheme to lie in: the micro-channel heat dissipation structure based on the HTCC adopts the micro-channel structure embedded in the ceramic substrate, so that the heat dissipation efficiency is higher, the occupied volume is smaller, the high-density integration is easier to realize, the heat dissipation effect is better, and the performance of the whole circuit is better.
Drawings
The invention is described in further detail below with reference to the drawings and the detailed description.
FIG. 1 is a schematic front view of a structure according to an embodiment of the present invention;
FIG. 2 is a perspective view of a structure according to an embodiment of the present invention;
FIG. 3 is a schematic perspective view of a heat sink manifold assembly according to an embodiment of the present invention;
FIG. 4 is a simulation of the architecture of an embodiment of the present invention;
wherein: 1. a ceramic substrate; 2. a chip mounting area; 3. a heat sink runner manifold; 4. the cooling liquid enters the flow channel; 5. the cooling liquid flows out of the flow channel; 6. a liquid inlet; 7. and a liquid outlet.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As shown in fig. 1 to fig. 3, in general, an embodiment of the present invention discloses an HTCC structure with micro flow channels, which includes a ceramic substrate 1, a chip mounting area 2 is disposed on a front surface of the ceramic substrate 1, a heat dissipation channel manifold set is formed in the ceramic substrate on a back surface of each chip mounting area 2, the heat dissipation channel manifold set includes a plurality of heat dissipation channel manifolds 3, and each heat dissipation channel manifold 3 is formed with a cooling liquid inlet and a cooling liquid outlet.
Further, as shown in fig. 2, the HTCC structure further includes a metal bottom plate located outside the ceramic substrate 1, and the metal bottom plate may be prepared by using a metal material according to the prior art. A cooling liquid inlet groove and a cooling liquid outlet groove are formed in the upper surface of the metal bottom plate, and the cooling liquid inlet groove is not communicated with the cooling liquid outlet groove; when the metal base plate is fixed to the back surface of the ceramic substrate 1, a cooling liquid inlet flow passage 4 is formed between the cooling liquid inlet groove and the ceramic substrate 1, and a cooling liquid outlet flow passage 5 is formed between the cooling liquid outlet groove and the ceramic substrate 1. A liquid inlet 6 with an opening positioned on the outer side is formed on the cooling liquid inlet runner 4, cooling liquid inlets on all the heat radiating runner manifolds 3 are communicated together through the cooling liquid inlet runner 4, a liquid outlet 7 with an opening positioned on the outer side is formed on the cooling liquid outlet runner 5, and cooling liquid outlets on all the heat radiating runner manifolds 3 are communicated together through the cooling liquid outlet runner 5;
the cooling liquid enters the cooling liquid inlet channel 4 through the liquid inlet 6, then flows into the heat dissipation runner manifold 3 through the cooling liquid inlet channel 4, is discharged from the heat dissipation runner manifold 3, then enters the cooling liquid outlet channel 5, and finally is discharged into the cooling source through the liquid outlet 7.
The cooling liquid outlet and the cooling liquid inlet on the heat dissipation runner manifold 3 are arranged towards the outside, preferably, in order to increase the overall length of the heat dissipation runner manifold 3 and further increase the cooling effect, the main body of the heat dissipation runner manifold 3 is arranged in a bent manner, and further, the main body of the heat dissipation runner manifold 3 is arranged in a left-right bent manner or an up-down bent manner. In addition, it should be noted that the heat dissipation runner manifolds 3 are separately provided.
Furthermore, a plurality of open cavities are arranged on the front surface of the ceramic substrate 1 to form the chip mounting area, and the chip is located in the open cavities. Because the heat generated by the high-power chip is relatively large, the heat dissipation runner manifold group is located at the lower side of the high-power chip, and it should be noted that the heat dissipation runner manifold group can also be located at the lower sides of other chips. The metal bottom plate and the ceramic substrate are welded by silver and copper, and other metal materials can be used for welding between the metal bottom plate and the ceramic substrate.
Furthermore, ceramic steps are arranged in the chip placing cavity of the ceramic substrate, the side wall of the cavity is metalized, the ceramic steps are convenient for bonding the chips, and the side wall is metalized to enhance isolation and ground continuity.
Compared with the prior art, the micro-channel heat dissipation structure based on HTCC provided by the invention has the advantages that the through holes are embedded in the ceramic substrate, the metal base plate and the ceramic substrate are welded to form the channel, and the micro-channel structure embedded in the ceramic substrate is adopted, so that the heat dissipation efficiency is higher, the occupied volume is smaller, the high-density integration is easier to realize, the heat dissipation effect is better, and the overall circuit performance is better.
The following thermal simulation is performed on the micro-channel heat dissipation structure based on the HTCC provided by the present invention, and the structure is modeled and simulated in thermal simulation software Flotherm, and the simulation result is shown in fig. 4. The simulation result shows that the micro-channel heat dissipation structure based on HTCC has obvious improvement on the thermal performance of the system: under the environment temperature of 25 ℃, water is used as cooling liquid, the flow rate of liquid in a micro-channel is set to be 5ml/s, the heat dissipation power of a power amplifier is assumed to be 20W, the simulation result shows that the temperature of a power amplifier slide is stabilized at 36 ℃, the temperature around a chip tube core is stabilized at 52.5 ℃, the heat exchange rate between the chip and the outside is obviously improved in a forced water cooling mode, and the performance of the power amplifier is improved at the same time due to the lower working temperature.
The design principle of the invention is as follows:
1) Material selection
HTCC is a mature packaging process, which is generally formed by sintering about 90% of alumina or aluminum nitride and a sintering aid at 1600 ℃, and the internal conductive metal is generally high-melting-point metal such as tungsten. The HTCC has the advantages of good air tightness and welding capacity, high thermal conductivity and bending strength and high frequency packaging.
2) Micro flow channel design
With the increasing integration density of electronic products and the application of high power devices, the thermal problem of electronic products is becoming a key problem restricting the performance improvement of electronic products. The structure of the micro-channel has decisive influence on heat dissipation performance and pressure drop, and the S-shaped bent micro-channel manifold adopted by the invention has excellent performances in the aspects of pressure drop, heat dissipation performance and the like, and is easy to process.
3) Assembly method
The assembly process of the structure is simple and convenient, the ceramic substrate and the metal structural member are aligned and then subjected to silver-copper welding at 780 ℃, and then the chip is stuck in the cavity by adopting conductive adhesive.
The detailed data for each parameter are as follows:
the thickness of the ceramic substrate is 3.21mm, and the depth of the cavity is 1.6mm.
The width of the embedded manifold is 0.95mm, and the depth is 1mm.
The thickness of the metal bottom plate is 2mm, the depth of the flow supply manifold and the flow outlet manifold is 1.5mm, and the width of the flow supply manifold and the flow outlet manifold is 2mm.
Claims (10)
1. An HTCC structure having micro flow channels, comprising: including ceramic substrate (1), the front of ceramic substrate (1) is provided with chip installation district (2), every be formed with a heat dissipation runner manifold group in the ceramic substrate at the chip installation district (2) back, heat dissipation runner manifold group includes a plurality of heat dissipation runner manifold (3), is formed with a coolant liquid import and a coolant liquid export on every heat dissipation runner manifold (3).
2. The HTCC structure with micro flow channels of claim 1 wherein: the HTCC structure also comprises a metal bottom plate positioned on the outer side of the ceramic substrate (1), wherein a cooling liquid inlet groove and a cooling liquid outlet groove are formed in the upper surface of the metal bottom plate, and the cooling liquid inlet groove is not communicated with the cooling liquid outlet groove; after the metal bottom plate is fixed to the back of the ceramic substrate (1), a cooling liquid inlet channel (4) is formed between the cooling liquid inlet groove and the ceramic substrate (1), a cooling liquid outlet channel (5) is formed between the cooling liquid outlet groove and the ceramic substrate (1), a liquid inlet (6) with an opening positioned on the outer side is formed on the cooling liquid inlet channel (4), cooling liquid inlets on all heat dissipation channel manifolds (3) are communicated together through the cooling liquid inlet channel (4), a liquid outlet (7) with an opening positioned on the outer side is formed on the cooling liquid outlet channel (5), and cooling liquid outlets on all heat dissipation channel manifolds (3) are communicated together through the cooling liquid outlet channel (5); the cooling liquid enters the cooling liquid inlet channel (4) through the liquid inlet (6), then flows into the heat dissipation runner manifold (3) through the cooling liquid inlet channel (4), is discharged from the heat dissipation runner manifold (3), then enters the cooling liquid outlet channel (5), and finally is discharged into the cooling source through the liquid outlet (7).
3. The HTCC structure having micro flow channels of claim 1, wherein: the cooling liquid outlet and the cooling liquid inlet on the heat dissipation runner manifold (3) are arranged towards the outer side, and the main body of the heat dissipation runner manifold (3) is arranged in a bending mode.
4. The HTCC structure having micro flow channels of claim 1, wherein: the heat dissipation runner manifolds (3) are arranged independently.
5. The HTCC structure having micro flow channels of claim 1, wherein: the main body of the heat dissipation runner manifold (3) is bent left and right or up and down.
6. The HTCC structure with micro flow channels of claim 1 wherein: the front surface of the ceramic substrate (1) is provided with a plurality of open cavities to form the chip mounting area, and the chip is positioned in the open cavities.
7. The HTCC structure having micro flow channels of claim 1, wherein: the heat dissipation runner manifold group is positioned on the lower side of the high-power chip.
8. The HTCC structure having micro flow channels of claim 1, wherein: and the metal bottom plate and the ceramic substrate are welded by silver and copper.
9. The HTCC structure with micro flow channels of claim 2, wherein: the cooling liquid inlet groove and the cooling liquid outlet groove are integrally U-shaped grooves.
10. The HTCC structure having micro flow channels of claim 1, wherein: the heat dissipation runner manifolds (3) are communicated in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210892619.2A CN115172291A (en) | 2022-07-27 | 2022-07-27 | HTCC structure with micro-channels |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210892619.2A CN115172291A (en) | 2022-07-27 | 2022-07-27 | HTCC structure with micro-channels |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115172291A true CN115172291A (en) | 2022-10-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210892619.2A Pending CN115172291A (en) | 2022-07-27 | 2022-07-27 | HTCC structure with micro-channels |
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| Country | Link |
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| CN (1) | CN115172291A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489838A (en) * | 2013-10-15 | 2014-01-01 | 北京大学 | Enhanced radiation three-dimensional packaging structure and packaging method for same |
| CN103579189A (en) * | 2012-07-23 | 2014-02-12 | 英飞凌科技股份有限公司 | Chip package and a method for manufacturing a chip package |
| CN104465562A (en) * | 2014-12-24 | 2015-03-25 | 西安电子科技大学 | Chain type staggered micro-channel structure |
| CN111785691A (en) * | 2020-05-13 | 2020-10-16 | 中国电子科技集团公司第五十五研究所 | Radio frequency micro-system three-dimensional packaging shell structure and manufacturing method |
| CN114121850A (en) * | 2021-10-29 | 2022-03-01 | 中国电子科技集团公司第十三研究所 | Embedded liquid cooling micro-channel ceramic packaging structure, ceramic packaging shell and preparation method |
-
2022
- 2022-07-27 CN CN202210892619.2A patent/CN115172291A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579189A (en) * | 2012-07-23 | 2014-02-12 | 英飞凌科技股份有限公司 | Chip package and a method for manufacturing a chip package |
| CN103489838A (en) * | 2013-10-15 | 2014-01-01 | 北京大学 | Enhanced radiation three-dimensional packaging structure and packaging method for same |
| CN104465562A (en) * | 2014-12-24 | 2015-03-25 | 西安电子科技大学 | Chain type staggered micro-channel structure |
| CN111785691A (en) * | 2020-05-13 | 2020-10-16 | 中国电子科技集团公司第五十五研究所 | Radio frequency micro-system three-dimensional packaging shell structure and manufacturing method |
| CN114121850A (en) * | 2021-10-29 | 2022-03-01 | 中国电子科技集团公司第十三研究所 | Embedded liquid cooling micro-channel ceramic packaging structure, ceramic packaging shell and preparation method |
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