CN115000802A - Semiconductor laser based on micro-channel secondary substrate - Google Patents
Semiconductor laser based on micro-channel secondary substrate Download PDFInfo
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- CN115000802A CN115000802A CN202210931310.XA CN202210931310A CN115000802A CN 115000802 A CN115000802 A CN 115000802A CN 202210931310 A CN202210931310 A CN 202210931310A CN 115000802 A CN115000802 A CN 115000802A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
Abstract
The invention relates to a semiconductor laser based on a micro-channel secondary substrate, which aims to solve the technical problems that the quality of light beams of a light source chip is degraded due to interface thermal stress caused by different thermal expansion coefficients of a laser chip and the conventional heat sink material, and the chip is easily damaged and polluted and the selection of the substrate material is limited due to the direct arrangement of a cooling channel on the substrate of the laser chip. The semiconductor laser comprises a semiconductor laser chip, a solder layer and a micro-channel secondary substrate which are arranged from top to bottom in sequence; the thermal expansion coefficient ratio of the material used for the semiconductor laser chip to the material used for the microchannel secondary substrate is 1: (0.5 to 1.5); the micro-channel secondary substrate comprises a plane layer and a flow channel layer which are integrally arranged from top to bottom, and the plane layer is connected with the solder layer; a plurality of cooling flow channels are arranged in the flow channel layer, and the cooling flow channels and the plane layer form a micro-channel structure of the secondary substrate.
Description
Technical Field
The invention relates to a microchannel heat dissipation heat sink for a laser chip, in particular to a semiconductor laser based on a microchannel secondary substrate.
Background
As shown in fig. 1, a semiconductor laser is provided, which has a structure that a semiconductor laser chip 01 is welded on an external copper microchannel heat sink 03 by using a solder 02, wherein the semiconductor laser chip 01 comprises an active working area and a substrate, heat of the active working area of the semiconductor laser chip 01 is conducted to the solder through the substrate heat conduction and then conducted to the heat sink through the solder, the heat is guided to an internal coolant by the heat sink, heat exchange is generated at a solid-liquid interface, and the heat is taken away by the coolant; the semiconductor laser has a large volume, and the difference of thermal expansion coefficients is caused by the difference of the chip substrate and the heat sink material on the heat transfer path, and the heat sink material is copper (the thermal expansion coefficient is 16.5 x 10) -6 /° c) and the light source chip substrate is gallium arsenide (coefficient of thermal expansion 6.4 x 10) -6 /° c), which in turn causes the light beam quality of the light source chip to deteriorate due to the existence of thermal stress at the interface during processing or use, and meanwhile, the copper heat sink is generally convenient for processing, the size of the micro-channel is in the sub-millimeter range, the heat dissipation capability is limited, and the power boost of the chip is limited.
Chinese patent publication No. CN 113948959 a discloses a self-cooling semiconductor laser, which divides a substrate of the semiconductor laser into a first substrate for current diffusion flowing through and a second substrate provided with a cooling channel, and sets a cooling channel on the substrate of the semiconductor laser, which can improve heat exchange efficiency and reduce device size, but directly processes the cooling channel on the substrate in the semiconductor laser chip, which is easy to damage the chip active working area of the semiconductor laser, increases manufacturing difficulty, reduces product yield, causes waste of chip resources, and more importantly, easily causes pollution to the laser chip active working area, and causes damage when the chip operates; meanwhile, the chip substrate is generally made of the same material as the active working area of the chip, so that the selection flexibility and the heat dissipation capacity of a material for preparing the cooling channel are limited, and when the laser chip is damaged, the substrate microchannel is abandoned, so that the production cost is increased.
Disclosure of Invention
The invention aims to solve the technical problems that the quality of light beams of a light source chip is degraded due to interface thermal stress caused by different thermal expansion coefficients of a laser chip and the conventional heat sink material, the chip is easily damaged and polluted due to the arrangement of a cooling channel on a substrate of the laser chip, and the selection of the substrate material is limited, and provides a semiconductor laser based on a micro-channel secondary substrate.
The technical scheme of the invention is as follows:
a semiconductor laser based on a microchannel secondary substrate, characterized in that:
the micro-channel laser chip comprises a semiconductor laser chip, a solder layer and a micro-channel secondary substrate which are arranged from top to bottom in sequence; the semiconductor laser chip comprises an active working area and a chip substrate;
the thermal expansion coefficient ratio of the material used by the semiconductor laser chip to the material used by the micro-channel secondary substrate is 1: (0.5 to 1.5);
the micro-channel secondary substrate comprises a plane layer and a flow channel layer which are integrally arranged from top to bottom, and the plane layer is connected with a solder layer and used for being welded with a semiconductor laser chip; a plurality of cooling channels are arranged in the channel layer, and the cooling channels and the plane layer form a micro-channel structure of the secondary substrate;
the active working area of the semiconductor laser chip is a main heat generation area, and heat generated during working is transferred to the plane layer and the flow channel layer through the substrate through the solder layer and exchanges heat with cooling liquid flowing inside the cooling flow channel, so that the semiconductor laser chip is cooled.
Further, defining: the length direction of the semiconductor laser chip is an X direction, the width direction is a Y direction, and the thickness direction is a Z direction;
the dimensions of the microchannel secondary substrate in the X-direction and the Y-direction are the same as the dimensions of the semiconductor laser chip in the X-direction and the Y-direction.
Furthermore, the plurality of cooling channels are arranged in parallel along the Y direction, a channel partition plate is arranged between every two adjacent cooling channels, the channel partition plate penetrates through the channel layer along the Z direction, and the upper end of the channel partition plate is connected with the plane layer;
the cooling liquid inlets of the cooling flow passages are communicated, and the cooling liquid outlets of the cooling flow passages are communicated.
Further, the flow channel layer comprises a first side plate and a second side plate which are positioned on a YZ plane, and a third side plate and a fourth side plate which are positioned on an XZ plane, and the first side plate, the second side plate, the third side plate and the fourth side plate have the same size in the Z direction;
the micro-channel secondary substrate also comprises a bottom plate arranged between the first side plate and the second side plate, and the bottom plate is respectively connected with the first side plate, the second side plate and the lower end face of the flow channel partition plate;
a first gap is formed between the bottom plate and the third side plate, so that cooling liquid inlets of the cooling flow channels are communicated with each other; and a second gap is formed between the bottom plate and the fourth side plate, so that the cooling liquid outlets of the cooling flow channels are communicated with each other.
Further, along the X direction, the sizes of the cooling flow channels are equal, and the sizes of the flow channel separation plates are equal;
the cross sections of the cooling flow channels in the X, Y, Z directions are all rectangular, and the volumes of the cooling flow channels are equal.
The cooling flow channels with the same size are arranged, so that the heat dissipation of the semiconductor laser chip is more uniform.
Furthermore, the size of the cooling flow channel in the X direction is 20-50 μm, and the size of the flow channel clapboard in the X direction is 20-50 μm;
the cooling flow channel has a dimension of 100-.
Further, the semiconductor laser chip material is gallium arsenide;
the microchannel secondary substrate material is silicon or silicon carbide.
Preferably, the microchannel secondary substrate is selected from a material having a thermal conductivity higher than that of the semiconductor laser chip and a thermal expansion coefficient close to that of the semiconductor laser chip substrate.
Further, a mode of forming the cooling flow channel in the flow channel layer is plasma etching.
Furthermore, the solder used for the solder layer is gold or gold tin.
Further, the cooling liquid is water, freon, pentafluoropropane or liquid metal.
The invention has the beneficial effects that:
1. the semiconductor laser based on the micro-channel secondary substrate provided by the invention adopts the material with the thermal expansion coefficient close to that of the semiconductor laser chip material as the base of the micro-channel secondary substrate to process the cooling flow channel, thereby avoiding the thermal stress existing on the interface of the two materials and improving the beam quality of the laser chip.
2. The micro-channel secondary substrate is manufactured independently, materials with proper thermal expansion coefficient and high thermal conductivity can be selected according to the materials of the laser chip, the flexibility and the adaptability of material selection are improved, and the application scenes of the micro-channel secondary substrate are increased.
3. Through the arrangement of the micro-channel secondary substrate, the laser chip is not required to be directly processed on the substrate, so that the laser chip is prevented from being damaged, and meanwhile, the pollution to the chip is also avoided.
4. The XY plane area of the micro-channel secondary substrate is the same as that of the semiconductor laser chip, and compared with the traditional semiconductor laser heat sink, the micro-channel laser chip is smaller in size and convenient to integrate.
5. Compared with the traditional heat sink, the micro-channel secondary substrate has good cooling effect, the coolant flow required for reaching the same temperature rise is reduced, the replaceability of the traditional heat sink packaging process is realized, and if the laser chip is damaged, the micro-channel secondary substrate can be repeatedly used, so that the cost is reduced.
Drawings
Fig. 1 is a schematic diagram of a conventional semiconductor laser;
FIG. 2 is a first schematic perspective view of a microchannel secondary substrate based semiconductor laser according to an embodiment of the present invention;
FIG. 3 is a schematic perspective view of a second embodiment of a microchannel secondary substrate based semiconductor laser of the present invention;
FIG. 4 is an enlarged view of A in FIG. 3;
fig. 5 is a graph showing the results of the flow/temperature curves for the bonding of a laser chip to a conventional heat sink and the bonding of a laser chip to a microchannel secondary substrate.
The reference numbers are as follows:
01-semiconductor laser chip, 02-solder, 03-copper micro-channel heat sink;
1-semiconductor laser chip, 2-solder layer, 3-micro-channel secondary substrate, 31-cooling liquid inlet, 32-cooling liquid outlet, 33-cooling flow channel, 34-flow channel clapboard and 35-bottom plate.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
An "embodiment" as referred to herein relates to a particular feature, structure, or characteristic that may be included in at least one implementation of the invention. The appearances of the phrase "in other embodiments" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments.
The present invention will be described in detail with reference to the drawings, wherein the cross-sectional views illustrating the structure of the device are not necessarily enlarged to scale, and are merely exemplary, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
Also in the description of the present invention, it should be noted that the terms "upper" and "lower" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in fig. 2, which are only used for convenience of description and simplification of the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation and operate, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first, second, third, or fourth" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Defining: the semiconductor laser chip 1 has a longitudinal direction X, a width direction Y, and a thickness direction Z.
Referring to fig. 2-4, the present embodiment provides a semiconductor laser based on a microchannel secondary substrate, which includes a semiconductor laser chip 1, a solder layer 2 and a microchannel secondary substrate 3 sequentially arranged from top to bottom; the semiconductor laser chip 1 comprises an active working area of the semiconductor laser chip and a chip substrate, and is an integral body, a transistor is grown on the substrate, and the part is a main functional area; the solder layer 2 is used for soldering the semiconductor laser chip 1 and the micro-channel secondary substrate 3, and the commonly used solder is gold or gold-tin, preferably gold-tin solder; although named as a secondary substrate, the micro-channel secondary substrate 3 is different from a chip substrate of the semiconductor laser chip 1 and does not participate in the growth process of a transistor, and the size of the micro-channel secondary substrate is the same as that of the semiconductor laser chip 1 in the X direction and the Y direction, so the micro-channel secondary substrate is named as a secondary substrate, is welded at the bottom of the chip through solder after the semiconductor laser chip 1 is manufactured, and has the main function of converting heat generated by the chip into internal energy of fluid through a micro-channel inside the micro-channel to drive the fluid to carry away the heat.
The thermal expansion coefficient ratio of the material used for the semiconductor laser chip 1 to the material used for the microchannel secondary substrate 3 is 1: (0.5-1.5), the thermal expansion coefficients of the materials of the semiconductor laser chip 1 and the micro-channel secondary substrate 3 are close to each other, so that the thermal stress between the semiconductor laser chip 1 and the micro-channel secondary substrate is reduced, and the beam quality of the semiconductor laser chip 1 can be effectively improved; preferably, the dimensions of the microchannel secondary substrate 3 in the X direction and the Y direction are the same as the dimensions of the semiconductor laser chip 1 in the X direction and the Y direction, that is, the area of the bonding surface of the microchannel secondary substrate 3 and the semiconductor laser chip 1 is the same, so that the microchannel secondary substrate 3 occupies a small volume, the volume of the semiconductor laser is reduced, and the integrated design of an electronic device is facilitated. In this embodiment, the semiconductor laser chip 1 is gallium arsenide, the corresponding micro-channel secondary substrate 3 may be silicon or silicon carbide, preferably silicon material, and the silicon has a mature processing technology, is easier to prepare, and has a large thermal conductivity. In other embodiments, the microchannel secondary substrate 3 may be prepared by selecting a material with a close thermal expansion coefficient and a high thermal conductivity coefficient as a matrix according to the material of the semiconductor laser chip 1.
The micro-channel secondary substrate 3 comprises a plane layer and a flow channel layer which are integrally arranged from top to bottom, and the plane layer is used for being welded with the semiconductor laser chip 1; a plurality of cooling channels 33 are formed in the channel layer, the plurality of cooling channels 33 and the plane layer form a micro-channel, and cooling liquid flows in the micro-channel; in the embodiment, a plasma etching mode is adopted to etch a micro-channel on a silicon secondary substrate, wherein the micro-channel is a groove for circulating cooling liquid to form a micro-channel secondary substrate 3; in the flow channel layer, a flow channel partition plate 34 is formed between adjacent cooling flow channels 33; the plurality of flow channel partition plates 34 are arranged in parallel in the Y direction, the flow channel partition plates 34 penetrate the flow channel layer in the Z direction, and the upper ends of the flow channel partition plates 34 are connected to the plane layer.
Along the X direction, the sizes of the cooling channels 33 are equal, the value range is 20-50 μm, and the sizes of the channel clapboards 34 are equal, the value range is 20-50 μm; the dimension of the cooling flow passage 33 in the Z direction is 100-200 μm. The cross sections of the cooling channels 33 in the three directions of X, Y, Z are all rectangular, and the volumes of the cooling channels 33 are equal; each cooling flow channel 33 is the same rectangular channel, and compared with a curved channel, the cooling flow channels are more fully contacted with a plane layer, so that heat can be taken away more conveniently; meanwhile, the rectangular channels are the same, so that the semiconductor laser chip 1 can be uniformly cooled, and local over-high temperature rise caused by nonuniform cooling is prevented.
The cooling liquid may be water or freon or pentafluoropropane or a liquid metal, and water having a high specific heat capacity and low cost is preferred as the cooling liquid.
The cooling liquid inlets 31 of the cooling channels 33 are communicated, and the cooling liquid outlets 32 of the cooling channels 33 are communicated, specifically, the channel layers include a first side plate and a second side plate which are located on a YZ plane, the first side plate and the second side plate are arranged oppositely, and a third side plate and a fourth side plate which are located on an XZ plane, and the third side plate and the fourth side plate are arranged oppositely; the first side plate, the second side plate, the third side plate and the fourth side plate have the same size in the Z direction, and structurally, the first side plate, the second side plate, the third side plate and the fourth side plate and each flow channel partition plate 34 are of an integral structure; the microchannel secondary substrate 3 further comprises a rectangular bottom plate 35 arranged between the first side plate and the second side plate, and if the dimension of the cooling channel 33 in the Z direction is smaller than the dimension of each side plate of the channel layer in the Z direction, the bottom plate 35 is welded with the inner wall of the first side plate, the inner wall of the second side plate and the lower end face of the channel partition plate 34 respectively; if the dimension of the cooling channel 33 in the Z direction is equal to the dimension of each side plate of the channel layer in the Z direction, the bottom plate 35 is welded to the lower end surface of the first side plate, the lower end surface of the second side plate, and the lower end surface of the channel partition 34. A first gap is formed between the bottom plate 35 and the third side plate, so that the cooling liquid inlets 31 of the cooling flow channels 33 are communicated with each other; a second gap is formed between the bottom plate 35 and the fourth side plate, so that the cooling liquid outlets 32 of the cooling channels 33 are communicated with each other. In the present embodiment, the cooling liquid inlet 31 and the cooling liquid outlet 32 are separated by providing the bottom plate 35, and in other embodiments, the cooling liquid inlet 31 and the cooling liquid outlet 32 may be separated by other arrangements, for example, the bottom plate 35 is welded to the lower end surfaces of the first side plate, the second side plate, the third side plate, the fourth side plate, and the flow path partition plate 34, respectively, and two through holes penetrating through the bottom plate 35 are provided in the Y direction to serve as the cooling liquid inlet 31 and the cooling liquid outlet 32, respectively.
In this embodiment, heat generated by the operation of the gaas semiconductor laser chip 1 is transferred to the planar layer and the flow channel layer of the microchannel secondary substrate 3 through the solder layer 2, and exchanges heat with the coolant flowing inside the flow channel layer, thereby cooling the semiconductor laser chip 1.
This is further illustrated below in connection with specific tests.
Subject: the 2mm 10mm laser chip adopts the traditional heat sink, namely a substrate micro-channel is prepared on the substrate of the 2mm 10mm laser chip; a 2mm by 10mm laser chip was soldered to the microchannel secondary substrate 3 provided in this example.
Experimental results and analysis: see FIG. 5, at 100W/cm 2 Under the condition of heat flow density of 0.20L/min, the micro-channel secondary substrate 3 is used as a heat sink, the highest junction temperature is 31.48 ℃, and the highest temperature rise is about 52 percent lower than the heat settlement of the traditional micro-channel; when the junction temperature is reached under the condition of adopting the traditional heat sink to cool the flow rate by 0.2L/min, the micro-channel secondary substrate 3 only needs cooling flow rate of 0.1L/min, and the temperature is lower than the traditional temperature, and the cooling flow rate is reduced to half of the original temperature; at the same time, the cooling effect by the traditional heat sink is achieved, and the total volume of the secondary substrate 3 is reduced by adopting the micro-channelAs small as 50% or less.
Claims (10)
1. A semiconductor laser based on a microchannel secondary substrate, comprising:
comprises a semiconductor laser chip (1), a solder layer (2) and a micro-channel secondary substrate (3) which are arranged from top to bottom in sequence;
the thermal expansion coefficient ratio of the material used by the semiconductor laser chip (1) to the material used by the micro-channel secondary substrate (3) is 1: (0.5 to 1.5);
the micro-channel secondary substrate (3) comprises a plane layer and a flow channel layer which are integrally arranged from top to bottom, and the plane layer is connected with the solder layer (2) and is used for being welded with the semiconductor laser chip (1); a plurality of cooling flow channels (33) are formed in the flow channel layer;
the heat generated by the semiconductor laser chip (1) is transferred to the plane layer and the flow channel layer through the solder layer (2) and exchanges heat with the cooling liquid flowing in the cooling flow channel (33) to realize the cooling of the semiconductor laser chip (1).
2. A microchannel secondary substrate based semiconductor laser as claimed in claim 1 wherein:
defining: the length direction of the semiconductor laser chip (1) is an X direction, the width direction is a Y direction, and the thickness direction is a Z direction;
the dimensions of the microchannel secondary substrate (3) in the X direction and the Y direction are the same as the dimensions of the semiconductor laser chip (1) in the X direction and the Y direction.
3. A microchannel secondary substrate based semiconductor laser as claimed in claim 2 wherein:
the cooling channels (33) are arranged in parallel along the Y direction, a channel partition plate (34) is arranged between every two adjacent cooling channels (33), the channel partition plate (34) penetrates through the channel layer along the Z direction, and the upper end of the channel partition plate (34) is connected with the plane layer;
the cooling fluid inlets (31) of the cooling fluid channels (33) are communicated, and the cooling fluid outlets (32) of the cooling fluid channels (33) are communicated.
4. A microchannel secondary substrate based semiconductor laser as claimed in claim 3 wherein:
the flow channel layer comprises a first side plate and a second side plate which are positioned on a YZ plane, and a third side plate and a fourth side plate which are positioned on an XZ plane, and the first side plate, the second side plate, the third side plate and the fourth side plate have the same size in the Z direction;
the micro-channel secondary substrate (3) further comprises a bottom plate (35) arranged between the first side plate and the second side plate, and the bottom plate (35) is respectively connected with the lower end faces of the first side plate, the second side plate and the flow channel partition plate (34);
a first gap is formed between the bottom plate (35) and the third side plate, so that the cooling liquid inlets (31) of the cooling flow channels (33) are communicated with each other; and a second gap is formed between the bottom plate (35) and the fourth side plate, so that the cooling liquid outlets (32) of the cooling flow channels (33) are communicated with each other.
5. A microchannel secondary substrate based semiconductor laser as claimed in claim 4 wherein:
in the X direction, the sizes of the cooling flow channels (33) are equal, and the sizes of the flow channel clapboards (34) are equal;
the cross sections of the cooling flow channels (33) in the X, Y, Z directions are all rectangular, and the volumes of the cooling flow channels (33) are equal.
6. A microchannel secondary substrate based semiconductor laser as claimed in claim 5 wherein:
the size of the cooling flow channel (33) in the X direction is 20-50 mu m, and the size of the flow channel partition plate (34) in the X direction is 20-50 mu m;
the cooling flow passage (33) has a dimension of 100-200 μm in the Z direction.
7. A microchannel secondary substrate based semiconductor laser as claimed in any one of claims 1 to 6 wherein:
the semiconductor laser chip (1) is made of gallium arsenide;
the micro-channel secondary substrate (3) is made of silicon or silicon carbide.
8. A microchannel secondary substrate based semiconductor laser as claimed in claim 7 wherein:
the way of opening the cooling flow channel (33) in the flow channel layer is plasma etching.
9. A microchannel secondary substrate based semiconductor laser as claimed in claim 8 wherein:
the solder adopted by the solder layer (2) is gold or gold tin.
10. A microchannel secondary substrate based semiconductor laser as claimed in claim 9 wherein:
the cooling liquid is water, freon, pentafluoropropane or liquid metal.
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| CN202210931310.XA CN115000802A (en) | 2022-08-04 | 2022-08-04 | Semiconductor laser based on micro-channel secondary substrate |
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| CN202210931310.XA CN115000802A (en) | 2022-08-04 | 2022-08-04 | Semiconductor laser based on micro-channel secondary substrate |
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Cited By (1)
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| CN115241734A (en) * | 2022-09-22 | 2022-10-25 | 中国科学院西安光学精密机械研究所 | Temperature-equalizing lightweight heat sink of single-tube laser chip and optical fiber coupling semiconductor laser |
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