CN1151554C - Semiconductor device, making method and composition type semiconductor device - Google Patents

Semiconductor device, making method and composition type semiconductor device Download PDF

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CN1151554C
CN1151554C CNB971102023A CN97110202A CN1151554C CN 1151554 C CN1151554 C CN 1151554C CN B971102023 A CNB971102023 A CN B971102023A CN 97110202 A CN97110202 A CN 97110202A CN 1151554 C CN1151554 C CN 1151554C
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semiconductor device
plurality
spot
leads
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CN1167339A (en
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大内伸仁
白石靖
河野博
山田悦夫
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冲电气工业株式会社
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Abstract

一种树脂密封型半导体器件、其制造方法和封装结构能够减小半导体器件的尺寸并获得高密度封装。 A sealed-type semiconductor device resin, and a manufacturing method of a package structure of the semiconductor device can be reduced in size and to obtain high-density packaging. 为此,具有暴露在外表面的引线的树脂密封型半导体器件备有点引线,所述点引线借助于夹在其间的绝缘胶粘带而粘附到半导体元件的电路形成面、各自独立地规则排列并且暴露到外面,而所述半导体元件被设置在里面。 For this purpose, a resin sealing type semiconductor device having the exposed outer surface of the lead wire somewhat prepared, the spot lead in by means of an insulating adhesive tape interposed therebetween adhered to a circuit forming surface of the semiconductor element, and are regularly arranged independently exposed to the outside, and said semiconductor element being disposed inside.

Description

半导体器件、其制造方法以及组合型半导体器件 The semiconductor device manufacturing method and semiconductor device combination

技术领域 FIELD

本发明涉及树脂密封型半导体器件、其制造方法以及其封装结构。 The present invention relates to a resin sealing type semiconductor device, a manufacturing method thereof and a packaging structure.

背景技术 Background technique

在最近几年,随着IC卡和存储卡的快速进步,已经要求把安装在所述卡中的树脂密封型半导体器件做得更薄。 In recent years, with the rapid advances in IC and memory cards, it has been requested that a resin sealing type semiconductor device mounted in said card is made thinner. 响应这种需求,已经提出了许多把所述半导体器件减薄的方法。 In response to this demand, a number of methods of thinning the semiconductor device to have been proposed.

这些建议中的一个涉及这样一种结构,其中,如在日本专利申请第6-273262号中所公开的,芯片座的上表面和半导体元件的下表面是曝露的。 One of these proposals relates to a structure in which, as described in Japanese Patent Application No. 6-273262 disclosed, the lower surface of the die holder and the upper surface of the semiconductor element is exposed. 根据这种结构,可以把封装的总厚度调整到大约0.5毫米。 According to such a structure, the total thickness of the package can be adjusted to about 0.5 millimeters.

此外,如日本专利公开公告第5-309983号(日本专利申请第4-119133号)中所公开的,通过把引线弯成L形来实现减小封装面积的技术。 Further, as described in Japanese Patent Laid-Open Publication No. (Japanese Patent Application No. 4-119133) 5-309983 first disclosed technique is achieved by reducing the area of ​​the package is bent into the L-shaped wire.

但是,在上述先有技术的树脂封装型半导体器件中,即使封装变薄了,封装面积仍然未变。 However, in the above-described resin-molded semiconductor device in the prior art, even when the package becomes thinner, the packaging area remains unchanged. 就是说,引线伸出到模制树脂外面很长,因此,在印刷电路板上的封装面积与半导体元件的面积相比显著地大了。 That is, the leads extend to the outside of the molding resin is very long, and therefore, is significantly larger than the area of ​​the package size of the semiconductor element, a printed circuit board. 对于实现高密度封装来说,这种结构是不够的。 For achieving high-density packaging, this structure is not sufficient.

发明内容 SUMMARY

本发明的目的在于减小树脂密封型半导体器件的尺寸和实现高密度封装,以及消除上述问题。 Object of the present invention to reduce the size of the resin-sealed-type semiconductor device and realize high-density packaging, and to eliminate the above problems.

本发明提供了一种半导体器件,其特征在于包括:形成半导体电路的半导体元件;包括设置在与所述半导体电路一起形成的表面上的绝缘胶粘带的绝缘层;固定在上述绝缘胶粘带上的多个点引线,它们各自在电气上是独立的并且被规则地排列在所述绝缘层上,它们的表面曝露在外部;至少在所述绝缘层和所述半导体元件的侧面上形成的模制树脂部分;金属隆起物,它设置在所述点引线和与所述半导体电路一起形成的表面之间的、不具备所述绝缘层的部分上,用于实现半导体芯片和点引线的电连接。 The present invention provides a semiconductor device, comprising: forming a semiconductor element of the semiconductor circuit; insulating layer includes an insulating adhesive tape on a surface formed with said semiconductor circuit; is fixed to the insulating tape leads on a plurality of points, each of which is electrically independent and are arranged regularly on the insulating layer, the outer exposed surface thereof; and at least in the insulating layer on the side of the semiconductor elements formed the molded resin portion; a metal bump, which is provided between said spot lead and the surface formed with said semiconductor circuit, does not have the upper portion of the insulating layer, the semiconductor chips and the electrical leads for implementing point connection.

优选地,所述点引线的至少曝露在外部的表面镀有金属镀层。 Preferably, the spot lead is exposed on the outside surface of at least a metal plating coating.

在所述绝缘层上设置支持部分,该支持部分包括与所述点引线的相同的构件、但是是独立于所述点引线的。 Supporting portion disposed on the insulating layer, the support member comprises the same portion of said spot lead but independent of said spot lead. 其中,可以通过切断从所述点引线延续形成的引线框而使所述点引线和所述支持部分彼此独立。 Wherein, by cutting off said spot lead from the lead frame formed in continuation of the said spot lead and the support portion independently of each other.

所述点引线包含延伸引线并且在电气上通过在所述延伸引线的前端或者中间部分的所述金属隆起物而连接到所述半导体元件。 The spot lead comprising a lead and electrically extend the front end or the lead extension intermediate portion of the metal bumps are connected to the semiconductor element through.

本发明还提供了一种制造树脂密封型半导体器件的方法,所述半导体器件包括半导体元件、绝缘层、点引线、金属隆起物和模制树脂部分,所述方法依次包括以下步骤:制备引线框架的步骤,所述引线框架包括框构件、分隔构件、连接分隔构件的支架及从分隔构件向内延伸的多个引线;在所述多个引线的前端镀金属镀层;进行热压配合,将引线粘附到胶粘带上;将引线与胶粘带之间的非接触部分,即分隔构件和引线前端之间的部分冲断,形成引线的外部连接端;将半导体元件粘附到胶粘带的另一面;在没有胶粘带的区域设置金属隆起物来实现半导体元件和点引线的电连接;用模制树脂对上述半导体器件进行密封;其特征在于所述的进行热压配合将引线粘附到胶粘带上的步骤还包括以下步骤:(a)利用绝缘胶粘带把引线框中的支持部分固定地粘附到所 The present invention further provides a method of manufacturing a resin sealing type semiconductor device, the semiconductor device includes a semiconductor element, an insulating layer, the spot lead, a metal bump and the molded resin portion, said method comprising sequentially the steps of: preparing a lead frame step, the lead frame comprises a frame member, the partition member, the partition member connecting bracket and a plurality of leads extending inwardly from the partition member; metal plating layer plated on a front end of said plurality of leads; for shrink fitting, the lead adhered to the adhesive tape; non-contact portion between the lead and the adhesive tape, i.e. the portion between the partition member and the lead distal thrust, the external lead connection ends formed; the semiconductor element is adhered to the adhesive tape the other surface; no adhesive tape is provided in the region of the metal bump is achieved semiconductor element and the electrical lead is connected to the point; the above-described semiconductor device sealed with mold resin; characterized in that said thermocompression stick with the lead is attached to the adhesive tape further comprises the steps of: (a) using an insulating adhesive tape support portion in a lead frame is fixedly adhered to the 绝缘层上并且独立于所述点引线,以及(b)把所述多个点引线与所述引线框分开。 The insulating layer and independent of the spot lead, and (b) said plurality of spot leads from said lead frame.

其中,所述利用绝缘胶粘带把引线框中的支持部分固定地粘附到所述绝缘层上的步骤是利用绝缘胶粘带固定地粘附引线框中的所述绝缘层的具有多个点引线的一个面,并且独立于所述点引线;和把半导体元件粘附到所述胶粘带的另一面并用树脂密封所述半导体元件;以及所述把所述多个点引线与所述引线框分开的步骤包括:把所述多个点引线与所述引线框分开,并且把所述点引线的前缘从所述半导体元件的侧面部分的外面向下弯曲成为L形,以及在所述点引线和与所述半导体电路一起形成的表面之间的、不具备所述绝缘层的部分上设置金属隆起物。 Wherein said insulating adhesive tape support portion in a lead frame is fixedly adhered to the insulating layer is a step of the insulating layer using an insulating adhesive tape adhered fixedly lead frame having a plurality of a surface point of the lead, and independent of the spot lead; and the semiconductor element is adhered to the other surface of the adhesive tape and sealing said semiconductor element with a resin; and the plurality of the points of the lead and the leadframe separate steps comprising: separating said plurality of spot leads from said lead frame, and the leading edge of the spot leads from outside the side portion of the semiconductor element is an L-shaped bent downward, and in the between said spot lead and the surface formed with said semiconductor circuit, does not have a metal bump provided on a portion of the insulating layer.

本发明又提供了一种半导体器件,其特征在于包括:形成半导体电路的半导体元件,包括设置在与所述半导体电路一起形成的表面上的绝缘胶粘带的绝缘层,在电气上各自独立的并规则地排列在所述绝缘层上的多个点引线,所述多个点引线的表面曝露在外部、并且它们的前端从所述半导体元件的侧面部分的外面向下延伸成为L形,金属隆起物,它设置在所述点引线和与所述半导体电路一起形成的表面之间的、不具备所述绝缘层的部分上,以及至少在所述绝缘层和所述半导体元件的侧面形成模制树脂部分。 The present invention further provides a semiconductor device comprising: a semiconductor element formed in the semiconductor circuit, the insulating layer comprising an insulating adhesive tape provided on the surface formed with said semiconductor circuit, electrically separate and a plurality of spot leads regularly arranged on the insulating layer, a plurality of points of the surface of the lead exposed to outside, and a front end thereof extending downward from outside the side portions of the semiconductor element is an L-shaped, metal bumps, which is provided between said spot lead and the surface formed with said semiconductor circuit, does not have the upper portion of the insulating layer, and a side surface at least in the insulating layer and the semiconductor element forming die resin portion.

本发明提供了一种封装多个半导体器件的方法,其特征在于包括以下步骤:以并排的关系设置多个具有若干L形引线的半导体器件,所述引线从模制树脂部分中半导体元件的上表面曝露到外部,同时,它们的前端从该半导体元件的侧面部分的外面向下延伸,并且,所述L形引线彼此连接,以及把所述L形引线的连接部分连接到设置在接线板上的同一个支点图案上。 The present invention provides a method of packaging a plurality of semiconductor devices, comprising the steps of: a plurality of side by side relation is provided a semiconductor device having a plurality of L-shaped leads of the lead from the molded resin portion of the semiconductor element surface exposed to the outside, while the front end thereof extends from outside the side portion of the semiconductor element downwardly, and said L-shaped leads are connected to each other, and the connecting portion of the L-shaped leads are connected to a terminal board provided on the same foot pattern.

本发明还提供了一种组合型半导体器件,其特征在于包括:多个具有若干L形引线的半导体器件,所述引线从模制树脂部分中半导体元件的上表面曝露到外部,同时,它们的前端从所述半导体元件的侧面部分的外面向下延伸,其中,所述多个半导体器件以面对面的关系配置,使得所述L形引线的前端彼此相对,并且所述L形引线彼此连接;其中,在所述多个半导体器件中,各树脂封装分别是模制树脂封装,并且,用粘合剂把所述树脂封装的下表面彼此固定在一起。 The present invention also provides a composition type semiconductor device, comprising: a plurality of semiconductor devices having a plurality of L-shaped leads of the lead exposed from the molded resin portion on the surface of the semiconductor element to the outside, at the same time, their extending from a distal end portion of the outer side surface of the semiconductor element downwardly, wherein the plurality of semiconductor devices arranged in face to face relationship, such that the front end of the L-shaped leads face each other, and said L-shaped leads are connected to each other; wherein , the plurality of semiconductor devices, each of the resin package is a molded resin package, respectively, and with an adhesive to a lower surface of the resin package fixed to each other.

本发明还提供了一种组合型半导体器件,其特征在于包括:多个具有若干L形引线的半导体器件,所述引线从模制树脂部分中半导体元件的上表面曝露到外部,同时,它们的前端从所述半导体元件的侧面部分的外面向下延伸,其中,把所述多个半导体器件以这样的方式层叠,使得所述L形引线的前端以彼此相同的方向排列;在所述多个层叠的半导体器件中,所述上层半导体器件的所述L形引线的前端连接到所述下层半导体器件的所述L形引线的弯曲部分;在所述多个半导体器件中,各树脂封装分别是模制树脂封装,并且,利用粘合剂把所述上层半导体器件的树脂封装的下表面固定到所述下层半导体器件的树脂封装的上表面。 The present invention also provides a composition type semiconductor device, comprising: a plurality of semiconductor devices having a plurality of L-shaped leads of the lead exposed from the molded resin portion on the surface of the semiconductor element to the outside, at the same time, their extending from a distal end portion of the outer side surface of the semiconductor element downwardly, wherein said plurality of semiconductor devices are stacked in such a manner that the front end of said L-shaped leads are arranged in the same direction to each other; said plurality stacked semiconductor device, the front end of the upper L-shaped leads of the semiconductor device is connected to said lower curved portion of the semiconductor device of the L-shaped leads; in the plurality of semiconductor devices, each of the resin package are molding the resin package, and using an adhesive to the lower surface of the resin package of said upper semiconductor device is fixed to the upper surface of the resin package of said lower semiconductor device.

基于这种结构,就有可能减小树脂封装型半导体器件的尺寸并且实现其高密度封装。 Based on this structure, it is possible to reduce the size of the resin-molded semiconductor device and realize high-density packaging thereof. 其中与半导体元件的连接不但涉及金属隆起物的应用,而且涉及绝缘胶粘带的应用,从而消除由热膨胀的差别引起的所述金属隆起物上的应力。 Wherein the semiconductor element is connected not only to the use of metal bumps, and to the use of an insulating adhesive tape, thereby eliminating the stress caused by differences in thermal expansion of the metal bump. 因此,有可能避免出现以下情况:由于金属隆起物的破裂等等而使电气性能变坏或者下降。 Thus, it is possible to avoid the following situation: metal bump due to the rupture of the electrical properties and the like deteriorate or fall.

在所述点引线的曝露的外表面镀有金属镀层。 The exposed outer surface of the spot lead is coated with metal plating. 这种金属镀层可以镀在与所述曝露的外表面相对的表面上,即,半导体元件一侧的表面上,但不应当镀在点此线的侧面上。 Such metal plating may be coated on the surface opposite to the outer surface of the exposed, i.e., the upper surface side of a semiconductor element, but should not be plated on the side surface of the line click here. 更具体地说,在形成于所述侧面上的、具有模压树脂部分的接触部分上不镀金属镀层,从而有可能避免模压之后树脂的破裂。 More specifically, on the side surface is formed on, not with the metallized contact portion of the plating mold resin portion, whereby it is possible to avoid cracking of the resin after molding. 可以在不必非常依赖于用来形成电路的结区的位置的情况下,在半导体元件上以阵列的形式形成所述外部接线端子(点引线)。 Without having to be very dependent on the position of the junction region to the circuit formed on the semiconductor element formed in said external terminals (spot leads) in an array.

用本发明的这种方法形成所述支持部分,并且可以加固所述半导体器件的结构,从而可以得到坚固的和高可靠的半导体器件。 The support structure portion is formed, and the semiconductor device can be reinforced by this method according to the present invention, thereby yielding a robust and highly reliable semiconductor device. 可以利用引线框架而同时形成所述点引线和支持部分,因此,用较少的工艺步骤得到结构上加固的半导体器件。 The lead frame may be formed simultaneously by using the spot lead and the support portion, and therefore, with fewer processing steps to obtain a semiconductor device reinforced structure.

由于所述支持部分和点引线是同时形成的,所以可以提高生产线效率。 Since the support portion and the spot leads are simultaneously formed, it is possible to improve the efficiency of the production line. 在电镀之后,利用绝缘胶粘带把所述点引线固定地粘附,并且此后使它穿孔(开孔)伸出。 After plating, the use of an insulating adhesive tape adhered to the lead fixing point, and thereafter it perforations (openings) extends. 因此,点引线被固定在模标位置,并且具有预定的尺寸。 Thus, the spot lead is fixed to the die target position, and having a predetermined size. 此外,预先进行了金属电镀,因此,往后甚至在组装半导体器件时都不需要再电镀。 In addition, the metal plating in advance, therefore, do not even need to later plating in assembling the semiconductor device. 此外,所述半导体元件被胶粘带稳定地支持住,并且,借助于所述支持部分能够得到坚固的树脂密封型半导体器件。 Furthermore, the semiconductor element is stably supported live adhesive tape, and, by means of the rigid support portion can be obtained a resin sealing type semiconductor device.

这样,L形引线沿着半导体元件的侧面曝露在外侧,因此,有可能提高用来把所述外部接线端子连接到印刷电路板的支点图案上的焊点的结合强度。 Thus, L-shaped leads exposed along the side surface of the semiconductor element on the outside, and therefore, it is possible to improve the external terminals for connection to the bonding strength of the solder joint on the printed circuit board foot pattern.

在本发明的方案中,不是在加工形成引线框之后进行模制树脂密封来形成所述点引线的,而是在组装所述半导体器件的模制树脂密封步骤之后对所述此线框进行加工处理来形成所述点引线的。 In the embodiment of the present invention, after the molding resin sealing the lead frame is not formed in the process to form the spot lead, but the processing of this frame after the molding step in the assembly of the resin sealing semiconductor device process to form the spot lead. 因此,有可能制造能够高密度封装的树脂密封型半导体器件。 Thus, it is possible to manufacture a resin sealing type semiconductor device capable of high-density packaging. 并且,可以把两根L形引线一起连接到同一个印刷线路板的支点图案上。 And, it can be two L-shaped leads are connected together on the same foot pattern of the printed wiring board.

上面的树脂密封型半导体器件倒置地层叠在封装在所述线路板上的下面的树脂密封型半导体器件上,并且,各个树脂密封型半导体器件的L形引线的前端被连接。 The above resin sealing type semiconductor device packaged in a stacked upside down on the circuit board below the resin sealing type semiconductor device, and the leading end L-shaped leads of the respective resin sealing type semiconductor device is connected. 因上级可能在所述线路板上获得高密度的封装。 Because of the higher possible to obtain a high-density packaging on the circuit board.

利用粘合剂把上面的和下面的树脂密封型半导体器件的下表面彼此固定在一起,因此,能够得到坚固的紧凑的组合型半导体器件。 Using an adhesive to the upper and lower surface of the lower resin sealing type semiconductor device fixed to each other, it is possible to obtain a compact combination of solid type semiconductor device.

根据本发明的组合型半导体器件的结构,制备多个具有若干L形引线的半导体器件,所述引线从模制树脂部分中半导体元件的上表面曝露到外部,同时,它们的前端从该半导体元件的侧面部分的外面向下延伸。 The structure of the aggregate type semiconductor device according to the present invention, a semiconductor device having a plurality of preparing a plurality of L-shaped leads of the lead from the molded resin portion of the exposed surface of the semiconductor element to the outside, while the front end thereof from the semiconductor element outer side portions extending downwardly. 然后,把所述多个半导体器件这样层叠在一起,使得所述L形引线具有彼此相同的方向。 Then, the plurality of semiconductor devices are laminated so that the L-shaped leads having the same direction as each other. 即,上面的半导体器件也以相同的方向层叠在下面的半导体器件上。 That is, the above semiconductor device is also stacked in the same direction on the lower semiconductor device. 按照相同的方向进行更多次的层叠,将得到具有更多层次的组合型半导体器件。 Performed more times in the same direction are stacked, the resulting aggregate type semiconductor device having more levels. 例如,通过再层叠一个树脂密封型半导体器件而把所述半导体器件叠加成三层的形式,并且,连接共L形引线,从而有可能在所述线路板上得到更高密度的封装。 For example, by re-laminating a resin sealing type semiconductor device and the semiconductor device to form stacked as three layers, and a total of L-shaped leads are connected, thereby making it possible to obtain a higher-density packaging on the circuit board.

把上层半导体器件按照相同的方向层叠在封装在所述线路板上的下层半导体器件上,并且,各个半导体器件的L形引线的前端和弯曲部分被彼此连接。 The upper semiconductor device is laminated on the lower semiconductor device packaged in the circuit board, and a front end and a curved portion of each L-shaped leads of the semiconductor device are connected to each other in the same direction. 因此,通过按照相同的方向顺序地层叠所述树脂密封型半导体器件,就能够简单地在所述线路板上获得更高密度的封装。 Thus, by sequentially laminating the resin sealing type semiconductor device in the same direction, it is possible to easily obtain a higher-density packaging on the circuit board. 利用所述粘合剂把上面的和下面的半导体器件彼此固定在一起,从而能够得到坚固的紧凑的半导体器件。 The use of adhesive to the upper and lower semiconductor devices secured to each other, it is possible to obtain a solid compact semiconductor device.

在以下结合附图的讨论中,将明白本发明的其它目的和优点。 In the following discussion in conjunction with the drawings, it will be apparent Other objects and advantages of the present invention.

附图说明 BRIEF DESCRIPTION

图1是说明本发明第一实施例的树脂密封型半导体器件的剖面图;图2是说明本发明第一实施例的树脂密封型半导体器件的局部透视图。 FIG. 1 is a sectional view of a resin sealing type semiconductor device according to a first embodiment of the present invention; FIG. 2 is a partial perspective view of a resin sealing type semiconductor device according to a first embodiment of the present invention.

图3是说明本发明第一实施例的修改的实施例的树脂密封型半导体器件的剖面图;图4是说明本发明第一实施例的修改的实施例的树脂密封型半导体器件的局部透视图;图5是说明树脂密封型半导体器件中固有的问题的说明性示意图;图6是说明在本发明第一实施例中制造引线框的步骤的平面图;图7是说明本发明第一实施例的第二个修改的实施例的树脂密封型半导体器件的主要部分的透视图;图8是说明本发明第二实施例的树脂密封型半导体器件的剖面图;图9是说明本发明第二实施例的修改的实施例的树脂密封型半导体器件的剖面图;图10是说明本发明第二实施例的修改的实施例的树脂密封型半导体器件的局部透视图;图11是说明本发明第二实施例的第一个应用实施例的剖面图;图12是说明本发明第二实施例的第二个应用实施例的剖面图;图13是说明本发 FIG 3 is a cross-sectional view of a resin-sealed-type semiconductor device according to a modified embodiment of the first embodiment of the present invention; FIG. 4 is a partial perspective view of a modified embodiment of a resin sealed semiconductor according to a first embodiment of the device of the present invention ; FIG. 5 is a diagram illustrating a resin sealing type semiconductor device problem inherent explanatory diagram; FIG. 6 is a plan view illustrating a step of manufacturing a lead frame according to the first embodiment of the present invention; FIG. 7 illustrates a first embodiment of the present invention a perspective view of a main part of a resin sealing type semiconductor device of the second embodiment of the modified embodiment; FIG. 8 is a sectional view of a second embodiment of a resin sealed type semiconductor device of the present invention is described; FIG. 9 is a diagram illustrating a second embodiment of the present invention a cross-sectional view of an embodiment of a resin sealed type semiconductor device of the modification; FIG. 10 is a partial perspective view of a resin sealing type semiconductor device of a modified embodiment of the second embodiment of the present invention is described embodiment; FIG. 11 illustrates a second embodiment of the present invention, a cross-sectional view of a first application example embodiment; FIG. 12 is a cross-sectional view of a second embodiment of the application of the second embodiment of the present invention; FIG. 13 is illustrative of the invention 第二实施例的第三个应用实施例的剖面图;图14是说明本发明第二实施例的第四个应用实施例的剖面图;具体实施方式下面将参考附图详细讨论本发明的实施例。 Cross-sectional view of a third embodiment of the second embodiment is applied; FIG. 14 is a sectional view of a second embodiment of the present invention is applied a fourth embodiment; embodiment of the present invention will be discussed in detail with reference to the accompanying drawings DETAILED DESCRIPTION example.

图1是说明本发明第一实施例的树脂密封型半导体器件的剖面图。 FIG. 1 is a sectional view of a resin sealing type semiconductor device according to a first embodiment of the present invention. 图2是树脂密封型半导体器件的局透视图。 FIG 2 is a partial perspective view of a resin sealing type semiconductor device.

如图1和2中所示,把点引线7和半导体元件支架4一起粘附到绝缘胶粘带(简称为“胶粘带”)2的一个面上。 As shown in FIGS. 1 and 2, the adhesion of the spot lead 7 and the semiconductor element to the insulating holder 4 together with the adhesive tape (referred to as "adhesive tape") 2 of a surface. 此外,把半导体元件1粘附到胶粘带2的另一面,把半导体元件1的电路形成面设置成与所述点引线具有面对面的关系。 Further, the semiconductor element 1 is adhered to the other surface of the adhesive tape 2, a semiconductor circuit element is formed to have a surface disposed face to face relationship with the spot lead.

通过设置在没有胶粘带2这个介物的区域的金属隆起物9来实现半导体元件1和点引线7的电连接。 By providing the metal bump 9 in region 2 without the adhesive tape was referred to an electrical lead 7 and the point of connection of the semiconductor element. 金属隆起物9包括诸如合金焊料等等的导电金属,并且设置在形成于半导体元件1的侧面的未示出的电极表面上。 9 comprises a metal bump such as a solder or the like conductive metal alloy, and provided on the electrode surface (not shown) is formed on the side surface of the semiconductor element 1 in.

点引线7镀有作为外部接线端(图中的上表面)和内部接点(图中的下表面)的金属镀层8。 Spot lead 7 is plated with an external terminal (upper surface in the drawing) and the internal contact (lower surface in the drawing) of the metal plating layer 8. 应当指出,所述点引线的侧面可以不镀金属镀层。 It should be noted that the point side lead wires may not be metallised coating.

至少点引线7、支架4和半导体元件1的外侧部分和下面部分被用模制树脂6密封。 At least the spot lead 7, the outer holder 4 and the semiconductor element 1 and lower portions are sealed with the mold resin 6.

顺便说说,本实施例的上述点引线7被规则地排列在半导体元件1的区域内、即、半导体元件1的宽度范围内。 Incidentally, the above-described spot leads 7 in the present embodiment are regularly arranged in the region of the semiconductor element 1, i.e., within the width of the semiconductor element 1.

此外,金属隆起物9的高度基本上与胶粘带2厚度相同。 Further, the height of the metal bump 9 is substantially the same as the adhesive tape 2 thickness.

由此可见,所述半导体器件的厚度是半导体元件1的厚度、金属隆起物9的高度以及点引线7的厚度之和。 Thus, the thickness of the semiconductor device is the thickness of the semiconductor element 1, the metal bump height and the thickness of the spot lead 7 and 9. 此外,根据本实施例,构成外部接线端的所述点引线基本上与所述半导体器件的表面齐平。 Further, according to the present embodiment, the spot lead constituting the external terminal of the semiconductor device surface substantially flush.

更具体地说,所述半导体器件薄到0.4-0.5毫米,其中,点引线7的厚度是大约0.125毫米、金属隆起物9的高度是0.5毫米以及半导体元件1的厚度是0.250毫米。 More specifically, the semiconductor device is as thin as 0.4-0.5 mm, wherein the thickness of the spot lead 7 is approximately 0.125 mm, a height of the metal bump 9 is 0.5 mm thick and a semiconductor element 1 is 0.250 mm. 此外,半导体元件1能够适应各种结构构件。 Further, the semiconductor element 1 can be adapted to various structural members. 还有,点引线7与半导体元件1之间的连接不但涉及金属隆起物9的应用,而且涉及绝缘胶粘带2的应用,从而消除由热膨胀的差别引起的所述金属隆起物9上的应力。 Further, the connection between the spot lead 7 and the semiconductor element not only relates to the use of the metal bump 9 and 9 relates to the stress applied on the insulating tape 2 so as to eliminate the metal bumps caused by differences in thermal expansion . 因此,有可能避免出现以下情况:由于金属隆起物9的破裂等等而使电气性能变坏或者下降。 Thus, it is possible to avoid the following situation: due to breakage, etc. of the metal bump 9 or deterioration of electrical properties decrease.

此外,图1和2中描绘的结构是这样的:支架4沿着图2中的前后方向伸展、贯穿该半导体器件的中心部分,因此,能够实现竖固的封装结构。 Further, FIGS. 1 and 2 are depicted in this structure: the support 4 extending along the longitudinal direction in FIG. 2, through the central portion of the semiconductor device, it is possible to realize the vertical package structure of the solid.

顺便说说,所述半导体元件支架在提高半导体器件的刚性方面是有效的,但是并不是必不可少的。 Incidentally, the semiconductor element to improve the rigidity of the stent in the semiconductor device is effective, but not essential. 当然,也可以利用如图3和4中所示的去掉支架4的树脂密封型半导体器件。 Of course, it can also be used to remove the resin sealing type semiconductor device and the holder 4 as shown in FIG. 4.

此外,如图5中所示,点引线7和模制树脂6在热膨胀系数方面是不同的,因此,当用模制树脂6密封之后恢复到正常温度时,在各个边界之间形成缝隙101。 Further, as shown in FIG. 5, the spot lead 7 and the mold resin 6 in the thermal expansion coefficient is different, and therefore, when the temperature returns to normal after 6 sealing resin molding, a gap 101 is formed between the respective boundaries. 此外,可以估计,这可能发展成为裂缝102。 Further, it can be estimated, which may develop into cracks 102. 然后,如图1和3中所示,这些边界处的紧密接触特性的增强可能这样的接合,使得点引线7的侧面不与作为外部接线端和内部接点的金属镀层8接触。 Then, as shown in Figures 1 and 3, the tight contact at the boundary of these enhancements may be joined such that the spot leads 7 side does not contact with the external terminals and a contact metal plating layer 8 inside. 这是由于金属镀层8导致与模制树脂6的紧密接触的退化。 This is due to the degradation of the metal plating layer 8 results in close contact with the mold resin 6. 然后,模制树脂6和金属镀层8之间的接触面被分离。 Then, the molding 6 and the contact surface between the metal plating layer 8 is separated from the resin.

使用这种结构,由于不存在模制树脂6和金属镀层8之间的接触,所以,能够避免模制之后所述模制树脂的破裂等等。 With this structure, since the mold resin 6 and the contact between the metal plating layer 8 does not exist, it is possible to avoid breakage after molding the resin molding and the like.

图6(A)和6(b)是说明制造本发明的第一实施例的引线框的步骤的平面图。 FIG 6 (A) and 6 (b) are plan views illustrating manufacturing steps of a first embodiment of the present invention is a lead frame. 图6(A)是说明被切断之前的引线框的平面图。 FIG 6 (A) is a plan view before the lead frame is cut off. 图6(b)是说明被切断之后的引线框的平面图。 FIG 6 (b) is a plan view of a lead frame after being cut.

首先,如图6(a)中所示,制备引线框10,它包括:框构件10a;分隔构件10b;用来连接框构件10a的支架4;以及多个从分隔构件10b向内延伸的引线7A。 First, as shown in FIG. 6 (a) to prepare a lead frame 10, comprising: a frame member 10a; 10b partition member;. 4 for connecting the frame member 10a of the holder; and a plurality of lead wires 10b extending inwardly from the partition member 7A. 所述多个引线7A的前端镀有金属镀层8,并且此后这样进行热压配合,以便把它粘附到胶粘带2上。 The front end of the plurality of leads 7A are coated with metal plating 8 and thereafter carried out by shrink fitting, so that it is adhered to the adhesive tape 2.

此后,如图6(B)中所示,指导引线7A和胶粘带2之间非接触部分,即,分隔构件10b和引线7A的前端之间的部分冲断(punched out),这样,最后形成点引线7。 Thereafter, as shown in FIG. 6 (B), the guide wire 7A and the adhesive tape between two non-contact portion, i.e., the partition between the front end portion 10b and the lead member 7A of thrust (punched out), so that, finally the spot lead 7 is formed. 即,以这样的尺寸进行所述冲断,使得点引线7成为外部接线端。 That is, the thrust in such a size that the spot leads 7 become external terminals. 这样冲断的点引线7被固定在胶粘带2上,并且,所述处理过程直接进入该半导体器件的组装步骤。 Such thrusting spot leads 7 are fixed to the adhesive tape 2, and the process proceeds directly to the processing steps of the semiconductor device is assembled.

如上所述,根据第一实施例,在电镀了金属镀层8之后,所述多个引线被用胶粘带2固定住,接着,为了把所述部分冲断而形成点引线7,把点引线按照预定的尺寸固定在目标位置。 As described above, according to the first embodiment, after the plating metal plating 8, the plurality of leads 2 are fixed with adhesive tape, then the portions 7 in order to form a thrust point lead, the lead point size is fixed at a predetermined target position. 此外,由于预先进行了金属电镀,所以,往后甚至在组装该半导体器件的步骤中都不需要再进行金属电镀。 Further, since the metal plating in advance, so that not even need to be back metal plating at the step of assembling the semiconductor device.

下面将说明本发明的第一实施例的第二个修改的实施例。 Under the first modification of the second embodiment of the present embodiment of the invention will be described.

图7是说明本发明第一实施例的第二个修改的实施例的树脂密封型半导体器件的主要部分的透视图。 FIG 7 is a perspective view of a main part of a resin sealing type semiconductor device of the second embodiment of the modification of the first embodiment of the present invention.

参考图7,图中未出模制树脂6、点引线7、延伸引线7-1、电镀在点引线7上和延伸引线7-1的表面上的金属镀层8、以及金属隆起物9。 Referring to FIG. 7, the molding resin is not 6, the spot lead 7, the extended leads 7-1, plated on the spot lead 7 and extends on the surface of the lead 7-1 metal plating 8, 9 and a metal bump.

在第一实施例中,将点引线7排列,并且相应地焊接到印刷电路板(未示出)的支点图案上(未示出)。 In the first embodiment, the spot leads 7 are arranged, and accordingly soldered to a printed circuit board (not shown) of the foot pattern (not shown). 半导体元件1的结区处在与点引线7相同的位置上,这意味着所述半导体没有自由度,并且在形成电路方面可能受到约束。 Junction region of the semiconductor element 1 at the same position of the point on the lead 7, which means that the semiconductor no degree of freedom, and may be constrained in terms of forming the circuit. 因此,根据本实施例,即使该半导体元件上的结区在排列方向有一定程度的偏移,也可以借助于延伸引线7-1来排列点引线7的外部接线端。 Thus, according to this embodiment, even if the junction areas on the semiconductor element to a certain extent offset arrangement direction, may be arranged by means of the extended leads 7-1 to external terminals spot leads 7.

即,作为外部接线端的点引线7备有延伸引线7-1,后者作为延伸的导线延伸到半导体元件上的结区,金属隆起物9连接到延伸引线7-1的前端。 That is, the spot leads 7 provided with external terminals extending leads 7-1, which is an extension of the wire junction region extending into the semiconductor element, conductive bumps 9 are connected to the front end of the extension leads 7-1.

因此,可以在不非常依赖于半导体元件上用来形成电路的结区的位置的情况下以阵列的表式形成所述外部接线端。 Thus, it can be used to position the case where the junction region is formed in a tabular circuit forming the array of external terminals not very dependent on the semiconductor element.

下面将描述本发明的第二实施例。 Next, a second embodiment of the present invention will be described.

图8是说明本发明第二实施例的树脂密封型半导体器件的剖面图。 8 is a sectional view of a resin sealing type semiconductor device of the second embodiment of the present invention will be described.

如图中所示,虽然所述结构基本上与第一实施例的相同,但是,上述点引线被露出,直至半导体元件1的侧面,并且把L形引线12弯曲成L形。 As shown, although the structure is substantially the same as the first embodiment, but the spot lead is exposed up to the side surface of the semiconductor element 1, and the L-shaped lead 12 is bent into an L-shape.

因此,与第一实施例不同,所述点引线的形成过程是这样的;不是在加工形成引线框之后进行模制树脂密封,而是在组装半导体器件的模制树脂密封步骤之后加工形成所述引线。 Accordingly, different from the first embodiment, the dot formation process is a lead; molding after the resin sealing the lead frame is not formed in the processing, but is formed after the molding process resin sealing step in the assembly of the semiconductor device lead.

这样,L形引线12被露出、直至半导体元件1的侧面,因此能够增强用来把外部接线端子连接到犯刷电路板(未示出)的支点图案(未示出)的焊点的接合强度。 Thus the bonding strength, L-shaped leads 12 are exposed, until the side surface of the semiconductor element 1, it can be used to enhance the external connection terminals connected to the brush make a circuit board (not shown) of the foot pattern (not shown) of the solder joint .

顺便说说,当然可以在省去图8中所示的支架4的情况下构成所述树脂密封型半导体器件。 Incidentally, of course, the stent may be omitted as shown in FIG. 8 constituting the resin sealing type semiconductor device 4 case.

图10是说明树脂密封型半导体器件的主要部分的透视图,所述树脂密封型半导体器件是这样构成的,使得图9中所示的半导体元件支架被省去,其中,镀有金属镀层8的L形引线排列在用来密封半导体元件的模制树脂6的两侧。 FIG 10 is a perspective view of a main portion of the resin sealing type semiconductor device described, the resin sealing type semiconductor device is constructed such that the semiconductor element holder shown in FIG. 9 is omitted, which is coated with metal plating 8 L-shaped leads are arranged on both sides of the molding resin for sealing the semiconductor element 6.

图1是说明本发明第二实施例的第一个应用实施例的剖面图。 FIG. 1 is a sectional view of a first embodiment of the application of the second embodiment of the present invention.

根据第二实施例中所示的用模制树脂6密封的树脂密封型半导体器件,由于L形引线12存在于侧面,所以,可以把彼此相邻的树脂密封型半导体器件B的L形引线12b和树脂密封型半导体器件A的L形引线12a相互连接。 The resin sealing type semiconductor device with a mold resin shown in the second embodiment of the seal 6, since the L-shaped leads 12 is present on the side surface, so that the L-shaped leads can be adjacent to each other resin sealing type semiconductor device B and 12b L-shaped leads and the resin sealing type semiconductor device a 12a connected to each other.

此外,可以通过焊点14把L形引线12a和L形引线12b一起连接到同一块印刷电路板13上的支点图案15。 Further, solder 14 may be connected by L-shaped lead 12a and the L-shaped leads 12b together with a printed circuit board foot pattern on 1315. 即,可以把L形引线12a和L形引线12b共用于同一个支点图案15上。 That is, the L-shaped lead 12a and the L-shaped leads 12b common to a foot pattern 15 on the same. 可以在许多作为存储器的半导体器件的场合看到这种连接方法,其中,彼此相邻的半导体元件的电路是以反向的形式形成的,并且端子的输入/输出也是反向的。 In many occasions as may be a semiconductor memory device seen this connection method, wherein a circuit of the semiconductor elements adjacent to each other is a reverse form of the form, and the input terminal I / O is reversed.

这样,在树脂密封型半导体器件的侧面上形成L形引线12,因此,有可能在同一块印刷电路板13上以串联的形式紧凑地封装所述树脂密封型半导体器件。 Thus, L-shaped leads 12 are formed on the side surface of the resin-sealed-type semiconductor device, therefore, it is possible on the same printed circuit board 13 in a series in the form of a compact enclosing the resin sealing type semiconductor device.

此外,可以简化印刷电路板上的布线。 In addition, to simplify wiring in the printed circuit board.

图12是说明本发明第二实施例的第二个应用实施例的剖面图。 FIG 12 is a cross-sectional view of a second embodiment of the application of the second embodiment of the present invention.

根据本发明的第二实施例中所示的用模制树脂6密封的树脂密封型半导体器件,L形引线12沿着侧面一直延伸到相反的一面,因此,如图12中所示,如果所述树脂密封型半导体器件是反向的(使其底面彼此相对)并且被层叠成两层,那么,通过焊点14把树脂密封型半导体器件B的L形引线12a的前端固定到树脂密封型半导体器件A的L形引线12b的前端。 The seal 6 with a molding resin of the resin-sealed-type semiconductor device shown in the second embodiment of the present invention, L-shaped leads 12 extend along the sides to the opposite side, thus, as shown in FIG. 12, if the said resin sealing type semiconductor devices are reversed (so that the bottom surface opposite to each other) and are laminated into two layers, then through the front end 12a of the L-shaped leads 14 pads resin sealing type semiconductor device B is fixed to the resin sealing type semiconductor a device of the L-shaped leads 12b of the front end. 树脂密封型半导体器件A的L形引线12a的前端也通过焊点14固定到树脂密封型半导体器件B的L形引线12b的前端。 The front end of L-shaped leads 12a of a resin sealing type semiconductor device A also passes through the weld 14 to the distal end resin sealing type semiconductor device B is L-shaped leads 12b. 此外,所述半导体器件(树脂封装)的底面用粘合剂16彼此固定在一起。 Further, the bottom surface of the semiconductor device (resin package) secured to each other with an adhesive 16.

这样,L形引线沿着所述树脂封装的侧面向外延伸直至所述底面,使得树脂密封型半导体器件A和与它反向的树脂密封型半导体器件B的各个L形引线12的前端可以通过焊点彼此连接。 Thus, until said L-shaped leads extend outwardly along the sides of the bottom surface of the resin package, so that each L-shaped leads A resin sealing type semiconductor device and its reverse a resin sealing type semiconductor device B can be produced by the front end 12 pads connected to each other. 此外,所述半导体元件的底面用粘合剂16彼此固定在一起,因此,能够提高凶刷电路板13上的封装密度。 Further, the bottom surface of the semiconductor element 16 is fixed with an adhesive to each other, it is possible to improve the circuit board 13 fierce brush packing density.

应当指出,这里使用的树脂密封型半导体器件在各个半导体元件1的电路结构方面以及端子的输入/输出方面是反相的。 It should be noted that the resin sealing type semiconductor devices used herein are inverted in terms of the circuit configuration of each of the semiconductor element 1 and the input terminal / output side.

图13是说明本发明第二实施例的第三个应用实施例的剖面图。 FIG 13 is a cross-sectional view of a third embodiment of the application of the second embodiment of the present invention.

根据该第三个应用实施例,如图13中所示,在图12中所示的上述两层上再层叠一层而形成三层的结构。 According to this third application example, as shown in Figure 13, then the two layers laminated on the layer shown in FIG. 12 to form a three-layer structure. 更具体地说,把作为第三层的树脂密封型半导体器件C按照与第一层的相同的方向层叠在作为第二层的树脂密封型半导体器件B上,其中,把各个L形引线12连接在一起。 More specifically, the third layer of the resin-sealed-type semiconductor device according C stacked on the second layer as the resin sealing type semiconductor device B in the same direction as the first layer, wherein each of the L-shaped leads 12 is connected together.

这样,根据本发明第二实施例的树脂密封型半导体器件被层叠成三层的形式,因此,能够更进一步地提高印刷电路板13上的封装密度。 Thus, the resin sealing type semiconductor device according to a second embodiment of the present invention are laminated in the form of three layers, it is possible to further improve the packing density on a printed circuit board 13.

可以进一步增加层的数目,例如,增加到四层、五层等等。 It may further increase the number of layers, e.g., increased to four, five and so on.

图14是说明本发明第二实施例的第四个应用实施例的剖面图。 FIG 14 is a sectional view illustrating a fourth embodiment of the application of the second embodiment of the present invention.

由于L形引线12沿着所述树脂封装的侧面向外延伸、直至底面附近的部分,所以,如图14中所示,可以把本发明的第二实篱例中所示的用模制树脂6密封的树脂密封型半导体器件按照相同的向上的方向层叠。 Since the L-shaped leads 12 extend along the outer side surface of the resin package, until the portion near the bottom surface, so that, as shown in FIG. 14, the mold resin may be shown in the second embodiment of the present invention, a solid fence in 6 resin sealing type semiconductor device sealed laminated in the same upward direction. 更具体地说,树脂密封型半导体器件A被封装在印刷电路板13上,并且,树脂密封型半导体器件B按照相同方向层叠其上。 More specifically, a resin sealing type semiconductor device A is packaged on the printed circuit board 13, and a resin sealing type semiconductor device B laminated thereon in the same direction. 然后,通过在L形引线12的前端和L形变曲部分处的焊点14,把树脂密封型半导体器件A的L形引线12a连接到树脂密封型半导体器件B的L形引线12a。 Then, the distal end 12a by solder deformation curve L and L-shaped portion 12 of the lead 14, the L-shaped leads A resin sealing type semiconductor device 12a is L-shaped leads are connected to the resin sealing type semiconductor device B is. 同样,把树脂密封型半导体器件A的L形引线12b连接到树脂密封型半导体器件B的L形引线12b。 Similarly, the L-shaped leads 12b resin sealing type semiconductor device A is connected to a resin sealing type semiconductor device B is L-shaped leads 12b. 此外,用粘合剂16把树脂密封型半导体器件A和B彼此固定在一起。 Further, the adhesive 16 secured to each other by a resin sealing type semiconductor devices A and B.

因此,能够提高印刷电路板13上的封装密度。 Accordingly, it is possible to improve the packaging density on a printed circuit board 13. 在许多具有完全相同的电路结构元件的可以层叠成多层结构的半导体存储器的场合,可以看到这样连接方法。 In many instances having identical circuit configuration of the semiconductor element can be laminated to the multilayer structure of the memory, you can see this connection method.

应当指出,本发明不限于上述实施例,而是可以用基于本发明的要点的各种各样的方法修改,这些修改并不被排除在本发明的范围之外。 It should be noted that the invention is not limited to the above embodiments, but may be based on various modifications of the gist of the present invention, these modifications are not excluded from the scope of the present invention.

Claims (11)

1.一种半导体器件,其特征在于包括:形成半导体电路的半导体元件;包括设置在与所述半导体电路一起形成的表面上的绝缘胶粘带的绝缘层;固定在上述绝缘胶粘带上的多个点引线,它们各自在电气上是独立的并且被规则地排列在所述绝缘层上,它们的表面曝露在外部;至少在所述绝缘层和所述半导体元件的侧面上形成的模制树脂部分;金属隆起物,它设置在所述点引线和与所述半导体电路一起形成的表面之间的、不具备所述绝缘层的部分上,用于实现半导体芯片和点引线的电连接。 1. A semiconductor device, comprising: forming a semiconductor element of the semiconductor circuit; insulating layer includes an insulating adhesive tape on a surface formed with said semiconductor circuit; fixed insulating adhesive tape of the above a plurality of spot leads, each of which is electrically independent and are arranged regularly on the insulating layer, the outer exposed surface thereof; and at least in the insulating layer formed on the side surface of the molding of the semiconductor element resin portion; electrically conductive bumps, which is provided between said spot lead and the surface formed with said semiconductor circuit, does not have the upper portion of the insulating layer, and a semiconductor chip for realizing the wire connection point.
2.根据权利要求1的半导体器件,其特征在于:所述点引线的至少曝露在外部的表面镀有金属镀层。 2. The semiconductor device according to claim 1, wherein: said spot lead is exposed at least coated with a metal plating layer on the outside surface.
3.根据权利要求1的半导体器件,其特征在于:在所述绝缘层上设置支持部分,该支持部分包括与所述点引线的相同的构件、但是是独立于所述点引线的。 The semiconductor device according to claim 1, wherein: the support section disposed on the insulating layer, the support member comprises the same portion of the lead point, but is independent of the spot lead.
4.根据权利要求3的半导体器件,其特征在于:通过切断从所述点引线延续形成的引线框而使所述点引线和所述支持部分彼此独立。 The semiconductor device according to claim 3, wherein: by cutting from the lead frame formed in continuation of the lead point of the lead and the supporting point portion independently of each other.
5.根据权利要求1的半导体器件,其特征在于:所述点引线包含延伸引线并且在电气上通过在所述延伸引线的前端或者中间部分的所述金属隆起物而连接到所述半导体元件。 5. The semiconductor device according to claim 1, wherein: said spot lead and the lead extends comprising electrically or in the front end of the extending portion of the intermediate metal bump lead is connected to the semiconductor element through.
6.一种制造树脂密封型半导体器件的方法,所述半导体器件包括半导体元件、绝缘层、点引线、金属隆起物和模制树脂部分,所述方法依次包括以下步骤:制备引线框架的步骤,所述引线框架包括框构件、分隔构件、连接分隔构件的支架及从分隔构件向内延伸的多个引线;在所述多个引线的前端镀金属镀层;进行热压配合,将引线粘附到胶粘带上;将引线与胶粘带之间的非接触部分,即分隔构件和引线前端之间的部分冲断,形成引线的外部连接端;将半导体元件粘附到胶粘带的另一面;在没有胶粘带的区域设置金属隆起物来实现半导体元件和点引线的电连接;用模制树脂对上述半导体器件进行密封;其特征在于所述的进行热压配合将引线粘附到胶粘带上的步骤还包括以下步骤:(a)利用绝缘胶粘带把引线框中的支持部分固定地粘附到所述绝缘层上并 6. A method of manufacturing a resin sealing type semiconductor device, the semiconductor device includes a semiconductor element, an insulating layer, the spot lead, a metal bump and the molded resin portion, said method comprising the following steps in sequence: a step of preparing a lead frame, the lead frame comprises a frame member, the partition member, the partition member connecting bracket and a plurality of leads extending inwardly from the partition member; metal plating layer plated on a front end of said plurality of leads; for shrink fitting, adhered to the lead adhesive tape; non-contact portion between the lead and the adhesive tape, i.e. the portion between the partition member and the lead distal thrust, the external lead connection ends formed; the semiconductor element is adhered to the other surface of the adhesive tape ; disposed in the region of the adhesive tape without the metal bump semiconductor element is achieved and the electrical connecting point of the lead; the above-described semiconductor device sealed with mold resin; wherein said lead wire is adhered to shrink fitting gum adhesive tape further comprises the step of the steps of: (a) using an insulating adhesive tape support portion in a lead frame is fixedly adhered to the insulating layer and 独立于所述点引线,以及(b)把所述多个点引线与所述引线框分开。 Independent of the spot lead, and (b) said plurality of spot leads from said lead frame.
7.根据权利要求6的制造半导体器件的方法,其特征在于:所述利用绝缘胶粘带把引线框中的支持部分固定地粘附到所述绝缘层上的步骤是利用绝缘胶粘带固定地粘附引线框中的所述绝缘层的具有多个点引线的一个面,并且独立于所述点引线;和把半导体元件粘附到所述胶粘带的另一面并用树脂密封所述半导体元件,以及所述把所述多个点引线与所述引线框分开的步骤包括:把所述多个点引线与所述引线框分开,并且把所述点引线的前缘从所述半导体元件的侧面部分的外面向下弯曲成为L形,以及在所述点引线和与所述半导体电路一起形成的表面之间的、不具备所述绝缘层的部分上设置金属隆起物。 7. A method of manufacturing a semiconductor device according to claim 6, wherein: said insulating adhesive tape support portion in a lead frame is fixedly adhered to the step of the insulating layer is fixed with an insulating adhesive tape a surface having a plurality of spot leads adhered to the insulating layer lead frame, and independent of the spot lead; and the semiconductor element is adhered to the other surface of the adhesive tape and sealing said semiconductor with a resin element, and wherein the step of said plurality of spot leads from said lead frame comprises: said plurality of spot leads from said lead frame, and the leading edge of the spot leads from said semiconductor element outer side portions downwardly bent into an L-shape, and disposed on the metallic portion between the spot lead and the surface formed with said semiconductor circuit, said insulating layer is not provided with ridges.
8.一种半导体器件,其特征在于包括:形成半导体电路的半导体元件,包括设置在与所述半导体电路一起形成的表面上的绝缘胶粘带的绝缘层,在电气上各自独立的并规则地排列在所述绝缘层上的多个点引线,所述多个点引线的表面曝露在外部、并且它们的前端从所述半导体元件的侧面部分的外面向下延伸成为L形,金属隆起物,它设置在所述点引线和与所述半导体电路一起形成的表面之间的、不具备所述绝缘层的部分上,以及至少在所述绝缘层和所述半导体元件的侧面形成模制树脂部分。 A semiconductor device comprising: a semiconductor element forming the semiconductor circuit, the insulating layer comprising an insulating adhesive tape provided on a surface formed with said semiconductor circuit, electrically independent and regularly a plurality of spot leads are arranged on said insulating layer, a plurality of points of said leads exposed in the outside surface and extending downward from the front end thereof outside the side portions of the semiconductor element is an L-shape, a metal bump, which is provided between said spot lead and the surface formed with said semiconductor circuit, it does not have the upper portion of the insulating layer, and at least the side surface of the insulating layer and the semiconductor element to form a molded resin portion .
9.封装多个半导体器件的方法,其特征在于包括以下步骤:以并排的关系设置多个具有若干L形引线的半导体器件,所述引线从模制树脂部分中半导体元件的上表面曝露到外部,同时,它们的前端从该半导体元件的侧面部分的外面向下延伸,并且,所述L形引线彼此连接,以及把所述L形引线的连接部分连接到设置在接线板上的同一个支点图案上。 9. A method of packaging a plurality of semiconductor devices, comprising the steps of: a plurality of side by side relation is provided a semiconductor device having a plurality of L-shaped leads of the lead exposed from the molded resin portion of the surface of the semiconductor element to the outside Meanwhile, the front end thereof extends from outside the side portion of the semiconductor element downwardly, and said L-shaped leads are connected to each other, and the connecting portion of the L-shaped leads are connected to a pivot provided on the same wiring board on the pattern.
10.一种组合型半导体器件,其特征在于包括:多个具有若干L形引线的半导体器件,所述引线从模制树脂部分中半导体元件的上表面曝露到外部,同时,它们的前端从所述半导体元件的侧面部分的外面向下延伸,其中,所述多个半导体器件以面对面的关系配置,使得所述L形引线的前端彼此相对,并且所述L形引线彼此连接;其中,在所述多个半导体器件中,各树脂封装分别是模制树脂封装,并且,用粘合剂把所述树脂封装的下表面彼此固定在一起。 An aggregate type semiconductor device, comprising: a plurality of semiconductor devices having a plurality of L-shaped leads of the lead exposed from the molded resin portion of the surface of the semiconductor element to the outside, while the front end thereof from the said extending portion of the outer side surface of the semiconductor element downwardly, wherein the plurality of semiconductor devices arranged in face to face relationship, such that the front end of the L-shaped leads opposed to each other, and said L-shaped leads are connected to one another; wherein in the said plurality of semiconductor devices, each of the resin package is a molded resin package, respectively, and with an adhesive to a lower surface of the resin package fixed to each other.
11.一种组合型半导体器件,其特征在于包括:多个具有若干L形引线的半导体器件,所述引线从模制树脂部分中半导体元件的上表面曝露到外部,同时,它们的前端从所述半导体元件的侧面部分的外面向下延伸,其中,把所述多个半导体器件以这样的方式层叠,使得所述L形引线的前端以彼此相同的方向排列;在所述多个层叠的半导体器件中,所述上层半导体器件的所述L形引线的前端连接到所述下层半导体器件的所述L形引线的弯曲部分;在所述多个半导体器件中,各树脂封装分别是模制树脂封装,并且,利用粘合剂把所述上层半导体器件的树脂封装的下表面固定到所述下层半导体器件的树脂封装的上表面。 An aggregate type semiconductor device, comprising: a plurality of semiconductor devices having a plurality of L-shaped leads of the lead exposed from the molded resin portion of the surface of the semiconductor element to the outside, while the front end thereof from the outside the side portions of said semiconductor element extending downwardly, wherein said plurality of semiconductor devices are stacked in such a manner that the front end of said L-shaped leads to each other are arranged in the same direction; the plurality of stacked semiconductor device, the front end of the upper L-shaped leads of the semiconductor device is connected to said lower curved portion of the semiconductor device of the L-shaped leads; in the plurality of semiconductor devices, each of the resin package is a molded resin respectively package, and using an adhesive to the lower surface of the resin package of said upper semiconductor device is fixed to the lower surface of the resin package of a semiconductor device.
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