JPH0719859B2 - Method for manufacturing IC card module - Google Patents
Method for manufacturing IC card moduleInfo
- Publication number
- JPH0719859B2 JPH0719859B2 JP63313457A JP31345788A JPH0719859B2 JP H0719859 B2 JPH0719859 B2 JP H0719859B2 JP 63313457 A JP63313457 A JP 63313457A JP 31345788 A JP31345788 A JP 31345788A JP H0719859 B2 JPH0719859 B2 JP H0719859B2
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- chip
- resin
- thermoplastic resin
- view
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Credit Cards Or The Like (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 この発明はICカードに埋設されるICカード用モジュール
の製造法に関するものである。Description: TECHNICAL FIELD The present invention relates to a method for manufacturing an IC card module embedded in an IC card.
従来の技術 従来、ICカード用モジュールは、第13図に見られるよう
なものであった。（例えば、特開昭63-188964号公報）
以下、第13図により、従来技術の概略を説明する。Conventional Technology Conventionally, the IC card module was as shown in FIG. (For example, JP-A-63-188964)
The outline of the prior art will be described below with reference to FIG.
ICカード用モジュール６は、リードフレーム５の裏面上
に接着効果をもった絶縁体３でICチップ２をボンディン
グし、そのICチップ２の配線パッドを、リードフレーム
５の接点5aの裏面に金線４により導通接続し、エポキシ
系の熱硬化性樹脂１により樹脂封止するものであった。In the IC card module 6, the IC chip 2 is bonded onto the back surface of the lead frame 5 with the insulator 3 having an adhesive effect, and the wiring pad of the IC chip 2 is connected to the back surface of the contact 5a of the lead frame 5 with the gold wire. 4 was electrically connected, and the resin was sealed with the epoxy thermosetting resin 1.
一般的に、半導体封止に使用する熱硬化性樹脂１は、モ
ールド時粘性が低く、微細な隙間にも浸入する性質を有
している。これに比べて、熱可塑性樹脂は、粘性が高
く、微細な隙間には浸入しない性質を有している。In general, the thermosetting resin 1 used for semiconductor encapsulation has low viscosity during molding and has a property of penetrating into minute gaps. On the other hand, the thermoplastic resin has a high viscosity and has a property of not penetrating into a minute gap.
発明が解決しようとする課題 したがって、従来このようなリードフレーム５を利用
し、ICチップ２を実装した後、一般的に流動性の良好な
エポキシ系の熱硬化性樹脂１でトランスファーモールド
していたのであるが、この場合熱硬化性樹脂１の流動性
が高いのでこのモールド時に熱硬化性樹脂１が接点5aの
表面へ廻り込み、この表面に薄バリとして残ってしま
い、この結果この薄バリを除去すると言う後処理が必要
になり、量産性の低いものになるという問題があった。SUMMARY OF THE INVENTION Therefore, conventionally, such a lead frame 5 was used to mount the IC chip 2 and then transfer molding was generally performed with an epoxy thermosetting resin 1 having good fluidity. However, in this case, since the thermosetting resin 1 has a high fluidity, the thermosetting resin 1 wraps around the surface of the contact 5a during this molding, and remains as a thin burr on this surface. There is a problem that post-processing called removal is required, and mass productivity is low.
本発明は、このような問題点を解決し、量産性に富むIC
カード用モジュールの製造方法を提供することを目的と
するものである。The present invention solves such problems and is an IC having high mass productivity.
It is an object of the present invention to provide a method for manufacturing a card module.
課題を解決するための手段 この目的を達成するために、本発明は、リードフレーム
の裏面上に、ICチップの装着部を熱可塑性樹脂により形
成した後に前記装着部にICチップを装着し、次にICチッ
プと上記リードフレームとを導通接続させ、次に熱硬化
性樹脂、あるいは熱可塑性樹脂により上記ICチップをリ
ードフレームの裏面上においてモールドしたものであ
る。Means for Solving the Problem In order to achieve this object, the present invention, on the back surface of the lead frame, after mounting the mounting portion of the IC chip by a thermoplastic resin, mounted the IC chip to the mounting portion, The IC chip and the lead frame are electrically connected to each other, and then the IC chip is molded on the back surface of the lead frame with a thermosetting resin or a thermoplastic resin.
作用 上記に示したように、熱可塑性樹脂により第１の成形を
行うため、リードフレームの接点の表面への樹脂の廻り
込みがなく、したがってこの廻り込んだ薄バリをとる作
業が不要で量産性の高いものとなる。As described above, since the first molding is performed with the thermoplastic resin, there is no wrapping of the resin on the surface of the contact of the lead frame, and therefore the work of removing the burrs that go around is not required and mass productivity is improved. Will be high.
実施例 以上本発明の一実施例を図面を参照して説明する。Embodiment One embodiment of the present invention will be described with reference to the drawings.
第１図は成形前のICカードの接点9aを形成した金属板製
のリードフレーム９を示す図であり、第２図はその要部
断面図（A-A′断面図）である。第３図は第１図に示
す、リードフレーム９を第１段階で、熱可塑性樹脂10を
成形したところを示すものである。つまり、第３図に示
すごとくリードフレーム９の裏面側において連結部9bに
形成された凸部9cまでが熱可塑性樹脂10により、被覆さ
れているのである。FIG. 1 is a diagram showing a lead frame 9 made of a metal plate on which a contact 9a of an IC card before molding is formed, and FIG. 2 is a sectional view (AA 'sectional view) of a main part thereof. FIG. 3 shows the lead frame 9 shown in FIG. 1 molded with the thermoplastic resin 10 in the first stage. That is, as shown in FIG. 3, the thermoplastic resin 10 covers up to the convex portion 9c formed on the connecting portion 9b on the back surface side of the lead frame 9.
ここで、一般的に熱硬化性樹脂は、粘性が低いため0.01
mm程度の成形金型の隙間があれば浸入するため、トラン
スファーモールドにおいて薄バリが生ずる可能性が高
い。それに比べて、本実施例のごとく熱可塑性樹脂10を
用いたものは、粘性が高いため、0.05mm程度以上の隙間
でないと浸入できず、よってこの成形工程において接点
9a間からその表面側に熱可塑性樹脂10が浸入して薄バリ
が生ずることはない。第４図は第３図のリードフレーム
９の裏面側を示す。また第５図は第４図の要部断面図で
あり、リードフレーム９に上記熱可塑性樹脂10を用いた
第１段階の成形にて接点9a間に絶縁層10aを設けたこと
を示すものである。また第４図における10bは、第１段
階の成形により形成された、ICチップを収納する枠部を
示すものである。Here, since thermosetting resins generally have low viscosity, 0.01
If there is a gap in the molding die of about mm, it penetrates, so there is a high possibility that thin burrs will occur in transfer molding. In contrast, the one using the thermoplastic resin 10 as in this example has a high viscosity, so that it cannot penetrate unless there is a gap of about 0.05 mm or more.
The thermoplastic resin 10 does not infiltrate into the surface side between 9a and thin burr does not occur. FIG. 4 shows the back surface side of the lead frame 9 of FIG. FIG. 5 is a cross-sectional view of the main part of FIG. 4, showing that the lead frame 9 is provided with the insulating layer 10a between the contacts 9a by the first-stage molding using the thermoplastic resin 10. is there. Further, 10b in FIG. 4 shows a frame portion for accommodating the IC chip formed by the first-stage molding.
また、この端子間絶縁層10aは、リードフレーム９の厚
さより薄いか又は同等の厚さとなっており枠部10b側へ
は非突出の構造となっている。The inter-terminal insulating layer 10a is thinner than or equal to the thickness of the lead frame 9 and has a non-projecting structure toward the frame portion 10b.
第６図は第１段階の成形後、第３図におけるリードフレ
ーム９の連結部9bを切断した図である。又、第２の実施
例として第12図に示すように第１段階の成形によりリー
ドフレーム９へ成形樹脂によりなつぎ部9eを設け、第６
図における連結部9fをも切断することも可能である。FIG. 6 is a view in which the connecting portion 9b of the lead frame 9 in FIG. 3 is cut after the first stage molding. Further, as a second embodiment, as shown in FIG. 12, a lead portion 9 made of a molding resin is provided with a spigot portion 9e by molding in the first stage, and
It is also possible to cut the connecting portion 9f in the figure.
第７図は第１段階の成形により形成したリードフレーム
９の裏面側の枠部10b内部にICチップ11を第９図のごと
く絶縁性接着剤12により接着実装し、ICチップ11の配線
パッドとリードフレーム９に形成された第４図における
ワイヤーボンディングランド9dとを金線13により電気的
に接続した図である。第８図はその後、第２段階で熱硬
化性樹脂（あるいは熱可塑性樹脂）14によりリードフレ
ーム９の裏面側においてICチップ11を被覆したものであ
り、第９図はその要部断面図である。FIG. 7 shows that the IC chip 11 is adhesively mounted with the insulating adhesive 12 inside the frame portion 10b on the back side of the lead frame 9 formed by the first-stage molding as shown in FIG. FIG. 6 is a diagram in which a wire bonding land 9d in FIG. 4 formed on a lead frame 9 is electrically connected by a gold wire 13. 8 shows the IC chip 11 covered with the thermosetting resin (or thermoplastic resin) 14 on the back side of the lead frame 9 in the second step, and FIG. 9 is a cross-sectional view of the main part. .
さらに第11図にはその要部の拡大図を示す。第11図にお
いてICチップ11はICチップ11を収納する枠部10b内に実
装され、ICチップ11と、リードフレーム９は絶縁性接着
剤12により固定されている。また、各接点9aは、熱可塑
性樹脂からなる絶縁層10aと、絶縁性接着剤12により固
定されることになる。従来例でみるように、絶縁体３の
厚みは、補強体としての働らきもさせる場合は0.05〜0.
2mm程度必要である。しかし本発明実施例によれば、熱
可塑性樹脂10からなる絶縁層10aと絶縁性接着剤12で各
接点9aを接続しているため、絶縁性接着剤12の厚さを考
える上で補強体としての働らきは不要であり、単に絶縁
性だけが満足されればよい。Further, FIG. 11 shows an enlarged view of the main part. In FIG. 11, the IC chip 11 is mounted in a frame portion 10b that houses the IC chip 11, and the IC chip 11 and the lead frame 9 are fixed by an insulating adhesive 12. Further, each contact point 9a is fixed by the insulating layer 10a made of a thermoplastic resin and the insulating adhesive 12. As seen in the conventional example, the thickness of the insulator 3 is 0.05 to 0 when it also acts as a reinforcing body.
It needs about 2 mm. However, according to the embodiment of the present invention, since each contact 9a is connected with the insulating layer 10a made of the thermoplastic resin 10 and the insulating adhesive 12, as a reinforcing body in consideration of the thickness of the insulating adhesive 12. Does not need to work, and only the insulating property needs to be satisfied.
従ってその厚さは、0.01〜0.05mm程度で良く、ICカード
としての総厚を少なくすることができる。Therefore, the thickness may be about 0.01 to 0.05 mm, and the total thickness as an IC card can be reduced.
第10図は第２段階の成形後リードフレーム９の残部を切
断除去し最終のICカード用モジュールの形状にしたもの
を示す。また、第２の実施例のように第12図に示すもの
についても同様の手順で行うことができる。また、本実
施例ではリードの切断部分を第２段階の成形で全て被覆
している。FIG. 10 shows a final IC card module formed by cutting and removing the remaining portion of the lead frame 9 after the second stage molding. Also, the same procedure can be performed for the device shown in FIG. 12 as in the second embodiment. Further, in the present embodiment, the cut portion of the lead is entirely covered by the second-stage molding.
当実施例では第１段階のモールド成形で使用する熱可塑
性樹脂10をPPS樹脂（ポリフェニレンサルファイド樹
脂）としたが、PPS樹脂と同様に高耐熱特性をもつPBT樹
脂（ポリブチレンテレフタレート樹脂）,PET樹脂（ポリ
エチレンテレフタレート樹脂）等のガラス繊維入りの材
料を使用してもよい。In this example, the thermoplastic resin 10 used in the first-stage molding was PPS resin (polyphenylene sulfide resin), but PBT resin (polybutylene terephthalate resin) and PET resin having high heat resistance similar to PPS resin. A material containing glass fiber such as (polyethylene terephthalate resin) may be used.
また第２段階でのモールド成形で使用する熱硬化性樹脂
14として主成分をオルソクレゾール（ボラック系エポキ
シ樹脂）としたが、近年、熱可塑性樹脂の前記PPS樹脂
の高純度品が開始され、半導体素子の直接封止への使用
検討がなされており、このような熱可塑性樹脂を第２段
階のモールド成形使用することも可能である。The thermosetting resin used in the second stage molding
Orthocresol (volac epoxy resin) was used as the main component as 14, but in recent years, high-purity thermoplastic resin PPS resin has been started, and its use for direct sealing of semiconductor elements has been studied. It is also possible to use such a thermoplastic resin in the second stage molding.
発明の効果 本発明によれば従来例のような製造法を行わずプレス加
工により形成されたリードフレームを使用し、第１段階
の熱可塑性樹脂によりリードフレームを基板状としICチ
ップを装着した後、第２段階のモールド成形によりICカ
ード用モジュールの形状とするため、ICカードの接点面
に樹脂のバリが生ぜず、よって量産性にも優れたICカー
ド用モジュールを供給することができるものである。EFFECTS OF THE INVENTION According to the present invention, a lead frame formed by press working without using the manufacturing method as in the conventional example is used, and the lead frame is made into a substrate shape by the thermoplastic resin of the first stage Since the shape of the IC card module is formed by the second-stage molding, resin burrs do not occur on the contact surface of the IC card, so it is possible to supply IC card modules with excellent mass productivity. is there.
第１図は本発明の一実施例のリードフレームの平面図、
第２図は同断面図、第３図は第１段階のモールド成形を
行ったリードフレームの表面側の平面図、第４図はその
裏面側のICチップ実装面の平面図、第５図は同断面図、
第６図は第１段階のモールド成形を行った後接点の連結
部の一部を切断した表面側の平面図、第７図はICチップ
を実装しICチップの配線パッドとリードフレームの接点
にワイヤーボンディングした裏面側の平面図、第８図は
第２段階のモールド成形を行った表面側の平面図、第９
図は同断面図、第10図はICカード用モジュールとして完
成された表面側の平面図、第11図は要部断面の拡大図、
第12図は、本発明の第２の実施例において第１段階のモ
ールド成形を行った後接点の連結部を切断した表面側の
平面図である。第13図は従来例のICカード用モジュール
の一部切欠斜視図である。 ９……リードフレーム、10……熱可塑性樹脂、11……IC
チップ、12……絶縁性接着剤、14……熱硬化性樹脂。FIG. 1 is a plan view of a lead frame according to an embodiment of the present invention,
2 is a sectional view of the same, FIG. 3 is a plan view of the front surface side of the lead frame molded in the first step, FIG. 4 is a plan view of the IC chip mounting surface on the back surface side, and FIG. The same sectional view,
Fig. 6 is a plan view of the surface side after cutting a part of the connection part of the contact after performing the first stage molding, and Fig. 7 is a contact between the wiring pad of the IC chip and the lead frame. FIG. 8 is a plan view of the back side after wire bonding, FIG. 8 is a plan view of the front side after the second stage molding, and FIG.
The figure is the same cross-sectional view, FIG. 10 is a plan view of the surface side completed as a module for an IC card, and FIG. 11 is an enlarged view of a cross section of a main part,
FIG. 12 is a plan view of the front surface side, which is obtained by cutting the connecting portion of the contact after performing the first-stage molding in the second embodiment of the present invention. FIG. 13 is a partially cutaway perspective view of a conventional IC card module. 9: Lead frame, 10: Thermoplastic resin, 11: IC
Chip, 12 ... Insulating adhesive, 14 ... Thermosetting resin.
Claims (1)
着部を熱可塑性樹脂により形成した後に前記装着部にIC
チップを装着し、次にICチップと上記リードフレームと
を導通接続させ、次に熱硬化性樹脂、あるいは熱可塑性
樹脂により上記ICチップをリードフレームの裏面上にお
いてモールドするICカード用モジュールの製造方法。1. An IC chip mounting portion is formed on the back surface of a lead frame with a thermoplastic resin, and then the IC chip is mounted on the mounting portion.
A method for manufacturing an IC card module in which a chip is mounted, then the IC chip and the lead frame are electrically connected, and then the IC chip is molded on the back surface of the lead frame with a thermosetting resin or a thermoplastic resin. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63313457A JPH0719859B2 (en) | 1988-12-12 | 1988-12-12 | Method for manufacturing IC card module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63313457A JPH0719859B2 (en) | 1988-12-12 | 1988-12-12 | Method for manufacturing IC card module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02158146A JPH02158146A (en) | 1990-06-18 |
| JPH0719859B2 true JPH0719859B2 (en) | 1995-03-06 |
Family
ID=18041534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63313457A Expired - Fee Related JPH0719859B2 (en) | 1988-12-12 | 1988-12-12 | Method for manufacturing IC card module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0719859B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2673041A1 (en) * | 1991-02-19 | 1992-08-21 | Gemplus Card Int | METHOD FOR MANUFACTURING INTEGRATED CIRCUIT MICROMODULES AND CORRESPONDING MICROMODULE. |
| JPH09260538A (en) * | 1996-03-27 | 1997-10-03 | Miyazaki Oki Electric Co Ltd | Resin sealed semiconductor device manufacturing method and its mounting structure |
| JP2002293170A (en) * | 2001-04-02 | 2002-10-09 | Nagoya Oil Chem Co Ltd | Manufacturing method of multicolor instrument panel |
| CN101004944A (en) | 2001-04-02 | 2007-07-25 | 株式会社日立制作所 | Memory card |
| ATE440346T1 (en) * | 2005-11-14 | 2009-09-15 | Tyco Electronics France Sas | SMARTCARD BODY, SMARTCARD AND MANUFACTURING METHOD |
-
1988
- 1988-12-12 JP JP63313457A patent/JPH0719859B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02158146A (en) | 1990-06-18 |
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