CN115152013A - 磁性装置 - Google Patents

磁性装置 Download PDF

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Publication number
CN115152013A
CN115152013A CN202180015269.5A CN202180015269A CN115152013A CN 115152013 A CN115152013 A CN 115152013A CN 202180015269 A CN202180015269 A CN 202180015269A CN 115152013 A CN115152013 A CN 115152013A
Authority
CN
China
Prior art keywords
magnetic layer
layer
magnetic
opposing
nonmagnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180015269.5A
Other languages
English (en)
Chinese (zh)
Inventor
加藤侑志
与田博明
大泽裕一
与田朋美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sp Aith Ltd
Original Assignee
Yoda S Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yoda S Co ltd filed Critical Yoda S Co ltd
Publication of CN115152013A publication Critical patent/CN115152013A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
CN202180015269.5A 2020-03-23 2021-03-22 磁性装置 Pending CN115152013A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020051703A JP2023062214A (ja) 2020-03-23 2020-03-23 磁気装置
JP2020-051703 2020-03-23
PCT/JP2021/011589 WO2021193488A1 (ja) 2020-03-23 2021-03-22 磁気装置

Publications (1)

Publication Number Publication Date
CN115152013A true CN115152013A (zh) 2022-10-04

Family

ID=77891856

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180015269.5A Pending CN115152013A (zh) 2020-03-23 2021-03-22 磁性装置

Country Status (3)

Country Link
JP (1) JP2023062214A (ja)
CN (1) CN115152013A (ja)
WO (1) WO2021193488A1 (ja)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007150265A (ja) * 2005-10-28 2007-06-14 Toshiba Corp 磁気抵抗効果素子および磁気記憶装置
KR102524352B1 (ko) * 2015-07-16 2023-04-21 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 자기 저항 효과 소자 및 자기 메모리
JP6290487B1 (ja) * 2017-03-17 2018-03-07 株式会社東芝 磁気メモリ
JP7024204B2 (ja) * 2017-04-21 2022-02-24 Tdk株式会社 スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ
US11610614B2 (en) * 2018-04-18 2023-03-21 Tohoku University Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device

Also Published As

Publication number Publication date
JP2023062214A (ja) 2023-05-08
WO2021193488A1 (ja) 2021-09-30

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Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20240117

Address after: Sheung Wan, Hongkong, China

Applicant after: SP AITH Ltd.

Address before: Japan Ibaraki

Applicant before: Yoda-s Co.,Ltd.