CN115125479A - 硬质合金涂层刀具及其制备方法 - Google Patents
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- 239000011248 coating agent Substances 0.000 title claims abstract description 106
- 239000000956 alloy Substances 0.000 title claims abstract description 26
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 230000007704 transition Effects 0.000 claims abstract description 145
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 77
- 239000010432 diamond Substances 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 13
- 239000010941 cobalt Substances 0.000 claims abstract description 13
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000005520 cutting process Methods 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 47
- 230000008021 deposition Effects 0.000 claims description 37
- 238000005229 chemical vapour deposition Methods 0.000 claims description 16
- 229910009043 WC-Co Inorganic materials 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 9
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 9
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 9
- 238000007733 ion plating Methods 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 238000007788 roughening Methods 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 2
- 238000010899 nucleation Methods 0.000 abstract description 10
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
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- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
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- 229910002804 graphite Inorganic materials 0.000 description 2
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- 241001391944 Commicarpus scandens Species 0.000 description 1
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- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
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- 239000003870 refractory metal Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明涉及一种硬质合金涂层刀具及其制备方法,硬质合金涂层刀具包括:刀具基体、过渡涂层、金刚石涂层,过渡涂层设置于刀具基体表面,过渡涂层包括依次层叠设置的第一Cr过渡层、CrN过渡层及第二Cr过渡层,第二Cr过渡层具有粗糙表面;金刚石涂层设置于第二Cr过渡层的粗糙表面。本发明通过将第一Cr过渡层设置于刀具基体与CrN过渡层之间,能够增强刀具基体与CrN过渡层的结合力;通过设置CrN过渡层,能够有效地抑制硬质合金基体中的钴元素向外扩散;通过设置第二Cr过渡层,第二Cr过渡层中的Cr元素与金刚石涂层的金刚石反应,生成Cr3C2,能够有效地与金刚石涂层形成结键,提高金刚石涂层形核的界面强度及增强第二Cr过渡层与金刚石涂层的结合力。
Description
技术领域
本发明涉及刀具涂层技术领域,特别是涉及一种硬质合金涂层刀具及其制备方法。
背景技术
为满足5G高频高速和高信息流量需求,陶瓷材料的应用日益广泛。与传统的FR-4(玻璃纤维)不同,陶瓷材料具有良好的高频性能和电性能,并具有高导热性,化学稳定性和热稳定性,是用于生成大规模集成电路和电力电子模块的理想封装材料,但是陶瓷电路板材质硬脆、易折,属于难加工板材,特别在5G通信领域,现阶段,在5G PCB板加工方面,高孔粗要求板、高端板及特殊板给PCB刀具加工带来了极大的挑战。
在现有技术中,大多采用在硬质合金刀具的刀具基体表面利用热丝化学气相沉积法(HFCVD)沉积金刚石涂层,能够有效提高硬质合金刀具的性能,以满足加工5G PCB板的要求,但针对钴粘结的含钴硬质合金,钴(Co)的粘结相的存在,是降低金刚石涂层与刀具基体结合强度的一个关键因素,它会推迟并阻碍金刚石涂层的形核和生长,易于在金刚石涂层与刀具基体之间形成石墨相,进而导致金刚石涂层与刀具基体的结合力减弱。
发明内容
基于此,有必要提供一种能够有效地抑制硬质合金基体中的钴元素向外扩散,增强过渡涂层与金刚石涂层的结合力的硬质合金涂层刀具及其制备方法。
一种硬质合金涂层刀具,包括:
刀具基体,所述刀具基体采用WC-Co硬质合金;
过渡涂层,所述过渡涂层设置于所述刀具基体表面,所述过渡涂层包括依次层叠设置的第一Cr过渡层、CrN过渡层及第二Cr过渡层,所述第二Cr过渡层具有粗糙表面;
金刚石涂层,所述金刚石涂层设置于第二Cr过渡层的所述粗糙表面。
在其中一个实施例中,所述过渡涂层的厚度范围为0.5μm-4μm;所述金刚石涂层的厚度范围为3μm-12μm。
本申请还提供了一种如上述的硬质合金涂层刀具的制备方法,包括以下步骤:
采用物理气相沉积法在所述刀具基体表面依次沉积所述第一Cr过渡层、所述CrN过渡层及所述第二Cr过渡层;
对所述第二Cr过渡层表面做粗糙化处理,以形成所述粗糙表面;
采用化学气相沉积法在所述第二Cr过渡层的所述粗糙表面沉积所述金刚石涂层。
在其中一个实施例中,在采用化学气相沉积法在所述第二Cr过渡层的所述粗糙表面沉积所述金刚石涂层之前包括步骤:
将沉积有所述第一Cr过渡层、所述CrN过渡层及所述第二Cr过渡层的所述刀具基体置于金刚石颗粒中,以对所述刀具基体表面进行植晶。
在其中一个实施例中,所述物理气相沉积法为磁控溅射法或电弧离子镀法;所述化学气相沉积法为热丝化学气相沉积法或微波等离子体化学气相沉积法。
在其中一个实施例中,所述第一Cr过渡层及所述第二Cr过渡层均通过所述电弧离子镀法沉积:
所述第一Cr过渡层的沉积参数为:沉积偏压为-500V~-600V,偏压电源的脉冲范围为50%-80%,电弧靶的靶电流为80A~160A,沉积厚度为0.5μm-0.7μm;
所述第二Cr过渡层的沉积参数为:沉积偏压为-200V~-400V,偏压电源的脉冲范围为50%-80%,电弧靶的靶电流为80A~160A,沉积厚度为0.2μm-0.4μm。
在其中一个实施例中,所述CrN过渡层通过所述磁控溅射法沉积;
所述CrN过渡层的沉积参数为:通入N2,沉积气压为0.5Pa-1Pa,沉积偏压为-60V~-150V,沉积厚度为1.3μm-1.9μm。
在其中一个实施例中,采用化学气相沉积法在所述第二Cr过渡层的所述粗糙表面沉积所述金刚石涂层,包括在压力为1~3kPa,灯丝温度为2100℃~2400℃条件下,以氢气、甲烷为反应气体源,利用所述化学气相沉积法在所述植晶后的所述刀具基体表面沉积10-12小时,形成所述金刚石涂层。
在其中一个实施例中,所述金刚石颗粒的粒径为0.2μm-1μm。
在其中一个实施例中,所述WC-Co硬质合金的含钴量为5.5%-12%。
上述方案中,通过将第一Cr过渡层设置于刀具基体与CrN过渡层之间,能够增强刀具基体与CrN过渡层的结合力;通过设置CrN过渡层,能够有效地抑制硬质合金基体中的钴元素向外扩散;通过设置第二Cr过渡层,第二Cr过渡层中的Cr元素与金刚石涂层的金刚石反应,生成Cr3C2,能够有效地与金刚石涂层形成结键,提高金刚石涂层形核的界面强度及增强第二Cr过渡层与金刚石涂层的结合力;通过设置粗糙表面,能够为金刚石涂层的机械咬合性能提供理想的基础,进一步提高了金刚石涂层与第二Cr过渡层的结合力,使硬质合金涂层刀具在加工方面有了很好的应用。
附图说明
图1为本发明一实施例所示的硬质合金涂层刀具的结构示意图;
图2为本发明一实施例所示的硬质合金涂层刀具的制备方法步骤流程图。
附图标记说明
10、硬质合金涂层刀具;100、刀具基体;200、过渡涂层;210、第一Cr过渡层;220、CrN过渡层;230、第二Cr过渡层;300、金刚石涂层。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂,下面结合附图对本发明的具体实施方式做详细的说明。在下面的描述中阐述了很多具体细节以便于充分理解本发明。但是本发明能够以很多不同于在此描述的其它方式来实施,本领域技术人员可以在不违背本发明内涵的情况下做类似改进,因此本发明不受下面公开的具体实施例的限制。
在本发明的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。
此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本发明的描述中,“多个”的含义是至少两个,例如两个,三个等,除非另有明确具体的限定。
在本发明中,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或成一体;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系,除非另有明确的限定。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本发明中的具体含义。
在本发明中,除非另有明确的规定和限定,第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触,或第一和第二特征通过中间媒介间接接触。而且,第一特征在第二特征“之上”、“上方”和“上面”可是第一特征在第二特征正上方或斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方,或仅仅表示第一特征水平高度小于第二特征。
需要说明的是,当元件被称为“固定于”或“设置于”另一个元件,它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件,它可以是直接连接到另一个元件或者可能同时存在居中元件。本文所使用的术语“垂直的”、“水平的”、“上”、“下”、“左”、“右”以及类似的表述只是为了说明的目的,并不表示是唯一的实施方式。
请参阅图1,本发明的一实施例提供了一种硬质合金涂层刀具10,包括刀具基体100、过渡涂层200及金刚石涂层300,过渡涂层200、金刚石涂层300依次设置于刀具基体100表面。具体地,刀具基体100采用WC-Co硬质合金。需要说明的是:WC-Co硬质合金是以高硬度难熔金属的碳化钨微米级粉末为主要成分,以钴(Co)为粘结剂,在真空炉或氢气还原炉中烧结而成的粉末冶金制品。
更具体地,WC-Co硬质合金具有很高的硬度、强度、耐磨性和耐腐蚀性。WC-Co硬质合金的含钴(Co)量为5.5%-12%,WC-Co硬质合金的晶粒度为0.8μm-1.3μm。示例性地,WC-Co硬质合金的含钴(Co)量为10%,WC-Co硬质合金的晶粒度为1.1μm。需要说明的是:WC-Co硬质合金中的钴(Co)的粘结相的存在,是降低金刚石涂层300与刀具基体100结合强度的一个关键因素,它会推迟并阻碍金刚石涂层300的形核和生长,易于在金刚石涂层300与刀具基体100之间形成石墨相,进而导致金刚石涂层300与刀具基体100的结合力减弱。通过在刀具基体100与金刚石涂层300设置过渡涂层200,减小了WC-Co硬质合金中的钴成分对金刚石涂层300的形核增加和生长造成的影响,且能够增强金刚石涂层300与刀具基体100的结合力。
金刚石涂层300的材料采用金刚石,金刚石是由碳原子以共价键键合成的立方结构晶体,具有高的硬度、刚性以及优良的抗磨损、抗腐蚀性和化学稳定性。因此,金刚石涂层300可以使刀具基体100具有很高的硬度、刚性、耐磨性及耐腐蚀性,能很好地满足刀具基体100的使用要求。
请参阅图1,过渡涂层200包括依次层叠设置的第一Cr过渡层210、CrN过渡层220及第二Cr过渡层230,第二Cr过渡层230具有粗糙表面。具体地,金刚石涂层300设置于第二Cr过渡层230的粗糙表面。
通过将第一Cr过渡层210设置于刀具基体100与CrN过渡层220之间,能够增强刀具基体100与CrN过渡层220的结合力;通过设置CrN过渡层220,能够有效地抑制硬质合金基体中的钴元素向外扩散;通过设置第二Cr过渡层230,第二Cr过渡层230中的Cr元素与金刚石涂层300的金刚石反应,生成Cr3C2,能够有效地与金刚石涂层300形成结键,提高金刚石涂层300形核的界面强度及增强第二Cr过渡层230与金刚石涂层300的结合力;通过设置粗糙表面,能够为金刚石涂层300的机械咬合性能提供理想的基础,进一步提高了金刚石涂层300与第二Cr过渡层230的结合力。
请参阅图1,根据本申请的一些实施例,可选地,过渡涂层200的厚度范围为0.5μm-4μm。金刚石涂层300的厚度范围为3μm-12μm。优选地,过渡涂层200的厚度范围为2μm-3μm。金刚石涂层300的厚度范围为6.5μm-8.5μm。具体地,第一Cr过渡层210的厚度为0.5μm-0.7μm。CrN过渡层220的厚度为1.3μm-1.9μm。第二Cr过渡层230的厚度为0.2μm-0.4μm。对于过渡涂层200、金刚石涂层300的厚度本申请不做限制,可根据使用需求自行设定。
示例性地,过渡涂层200的厚度为3μm。金刚石涂层300的厚度为8.5μm。具体地,第一Cr过渡层210的厚度为0.7μm。CrN过渡层220的厚度为1.9μm。第二Cr过渡层230的厚度为0.4μm。
请参阅图1及图2,本申请的一实施例还提供了一种如上述的硬质合金涂层刀具10的制备方法,包括以下步骤:
步骤1:采用物理气相沉积法在刀具基体100表面依次沉积第一Cr过渡层210、CrN过渡层220及第二Cr过渡层230。具体地,物理气相沉积法为磁控溅射法或电弧离子镀法。
其中,在沉积第一Cr过渡层210、CrN过渡层220及第二Cr过渡层230时,需将刀具基体100放入镀膜机的镀膜室,并要在真空环境下进行镀膜。镀膜室的真空度越低,则表示镀膜室内含有的空气分子就越小,在镀膜过程中进入到涂层里的杂质就越少,保证了涂层的纯净度。
步骤2:对第二Cr过渡层230表面做粗糙化处理,以形成粗糙表面。
步骤3:采用化学气相沉积法在第二Cr过渡层230的粗糙表面沉积金刚石涂层300。具体地,化学气相沉积法为热丝化学气相沉积法或微波等离子体化学气相沉积法。在本实施例中,金刚石涂层300的沉积采用热丝化学气相沉积法。
通过对第二Cr过渡层230表面做粗糙化处理,且在第二Cr过渡层230的粗糙表面沉积金刚石涂层300,能为金刚石涂层300带来较好的机械咬合性能,提高金刚石涂层300与第二Cr过渡层230的结合力。
在沉积第一Cr过渡层210、CrN过渡层220及第二Cr过渡层230前,对刀具基体100做表面清洁处理,以将刀具基体100的表面清洗干净,可增加涂层与刀具基体100的附着力。更具体地,对刀具基体100做表面清洁处理的步骤包括:
步骤1:向镀膜室充入还原性气体,以使还原性气体与刀具基体100表面发生氧化还原反应,以将刀具基体100表面未清洗干净的污渍例如油、棉等还原使其硬化。其中,还原性气体采用氢气(H2)、一氧化碳(CO)、硫化氢(H2S)、甲烷(CH4)、一氧化硫(SO)等。本申请对此不做限制,只要能够实现与刀具基体100表面发生氧化还原反应的作用即可。
步骤2:将还原性气体排出镀膜室。
步骤3:对刀具基体100表面进行离子清洗处理,以将使刀具基体100表面的氧化层有效去除。示例性地,对刀具基体100表面进行离子清洗处理方式为:将惰性气体充入镀膜室内,并在镀膜室内电离形成离子束,并向刀具基体100施加偏压,以使镀膜室内带正电的离子加速轰击刀具基体100,从而将刀具基体100表面清洗干净。惰性气体可以采用氩气、氪气、氦气等。本申请对此不做限制。
请参阅图1,根据本申请的一些实施例,可选地,在采用化学气相沉积法在第二Cr过渡层230的粗糙表面沉积金刚石涂层300之前包括步骤:
将沉积有第一Cr过渡层210、CrN过渡层220及第二Cr过渡层230的刀具基体100置于金刚石颗粒中以进行植晶。植晶方式采用超声研磨植晶,能够保证植晶的均匀性。超声的频率及超声的时间,可根据使用需要自行设定,本申请对此不做限制。
请参阅图1,根据本申请的一些实施例,可选地,第一Cr过渡层210及第二Cr过渡层230均通过电弧离子镀法沉积。具体地,镀膜室内还设置有Cr靶材及电弧源,电弧源用于使Cr靶材的表面产生电弧,以进行镀膜。更具体地,电弧源包括电弧电源及引弧针,引弧针靠近Cr靶材设置。电弧电源的正极与引弧针电连接,电弧电源的负极与Cr靶材电连接。本实施例中,Cr靶材的数量为四个。在其他的实施例中,Cr靶材的数量可以为一个、两个、三个或五个乃至更多,本申请对此不作限制。
采用脉冲电流沉积第一Cr过渡层210,其沉积参数为:沉积偏压为-500V~-600V,偏压电源的脉冲范围为50%-80%,电弧靶的靶电流为80A~160A,沉积厚度为0.5μm-0.7μm。在制备第一Cr过渡层210时,靶材为:Cr靶材。示例性地,第一Cr过渡层210的沉积偏压-500V,偏压电源的脉冲为50%,电弧靶的靶电流为80A,沉积厚度为0.6μm。
采用脉冲电流沉积第二Cr过渡层230,其沉积参数为:沉积偏压为-200V~-400V,偏压电源的脉冲范围为50%-80%,电弧靶的靶电流为80A~160A,沉积厚度为0.2μm-0.4μm。在制备第二Cr过渡层230时,靶材为:Cr靶材。示例性地,第二Cr过渡层230的沉积偏压-200V,偏压电源的脉冲为50%,电弧靶的靶电流为80A,沉积厚度为0.3μm。
请参阅图1,根据本申请的一些实施例,可选地,CrN过渡层220通过磁控溅射法沉积。具体地,CrN过渡层220通过高功率脉冲磁控溅射法(HiPIMS)沉积。
CrN过渡层220的沉积参数为:氮气(N2),沉积气压为0.5Pa-1Pa,沉积偏压为-60V~-150V,沉积厚度为1.3μm-1.9μm。在制备CrN过渡层220时,需向镀膜室通入氮气(N2),靶材为:Cr靶材。在沉积CrN过渡层220的过程中,Cr靶材的功率为4000-6000W,氮气流量60~100sccm。示例性地,沉积气压为1Pa,沉积偏压为-100V,沉积厚度为1.6μm。Cr靶材的功率为6000W,氮气流量100sccm。
请参阅图1,根据本申请的一些实施例,可选地,采用热丝化学气相沉积法在第二Cr过渡层230的粗糙表面沉积金刚石涂层300,包括在压力为1~3kPa,灯丝温度为2100℃~2400℃条件下,以氢气、甲烷为反应气体源,利用热丝化学气相沉积法在植晶后的刀具基体100表面沉积10-12小时,形成金刚石涂层300。具体地,金刚石颗粒的粒径为0.2μm-1μm。示例性地,在压力为2.7kPa,温度为2200℃条件下,以氢气、甲烷为反应气体源,利用热丝化学气相沉积法在植晶后的刀具基体100表面沉积12小时,形成金刚石涂层300。金刚石颗粒的粒径为1μm。
实施例:
下述实施例更具体地描述了本发明公开的内容,这些实施例仅仅用于阐述性说明,因为在本发明公开内容的范围内进行各种修改和变化对本领域技术人员来说是明显的。
实施例1
上述的硬质合金涂层刀具10通过以下方法制备得到:
将刀具基体100放入镀膜机的镀膜室,然后刀具基体100表面上采用电弧离子镀法并利用Cr靶材沉积0.5μm第一Cr过渡层210,然后在第一Cr过渡层210表面上采用磁控溅射法并利用Cr靶材及氮气(N2)沉积1.3μm的CrN过渡层220,再在CrN过渡层220表面上采用电弧离子镀法并利用Cr靶材沉积0.2μm的第二Cr过渡层230。
对第二Cr过渡层230表面做粗糙化处理。
然后将沉积有第一Cr过渡层210、CrN过渡层220及第二Cr过渡层230的刀具基体100的置于金刚石颗粒中以进行植晶并采用热丝化学气相沉积法沉积6.5μm的金刚石涂层300。
实施例2
上述的硬质合金涂层刀具10通过以下方法制备得到:
将刀具基体100放入镀膜机的镀膜室,然后刀具基体100表面上采用电弧离子镀法并利用Cr靶材沉积0.7μm第一Cr过渡层210,然后在第一Cr过渡层210表面上采用磁控溅射法并利用Cr靶材及氮气(N2)沉积1.9μm的CrN过渡层220,再在CrN过渡层220表面上采用电弧离子镀法并利用Cr靶材沉积0.4μm的第二Cr过渡层230。
对第二Cr过渡层230表面做粗糙化处理。
然后将沉积有第一Cr过渡层210、CrN过渡层220及第二Cr过渡层230的刀具基体100的置于金刚石颗粒中以进行植晶并采用热丝化学气相沉积法沉积8.5μm的金刚石涂层300。
以上所述实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。
Claims (10)
1.一种硬质合金涂层刀具,其特征在于,包括:
刀具基体,所述刀具基体采用WC-Co硬质合金;
过渡涂层,所述过渡涂层设置于所述刀具基体表面,所述过渡涂层包括依次层叠设置的第一Cr过渡层、CrN过渡层及第二Cr过渡层,所述第二Cr过渡层具有粗糙表面;
金刚石涂层,所述金刚石涂层设置于第二Cr过渡层的所述粗糙表面。
2.根据权利要求1所述的硬质合金涂层刀具,其特征在于,所述过渡涂层的厚度范围为0.5μm-4μm;所述金刚石涂层的厚度范围为3μm-12μm。
3.一种如权利要求1或2任一所述的硬质合金涂层刀具的制备方法,其特征在于,包括以下步骤:
采用物理气相沉积法在所述刀具基体表面依次沉积所述第一Cr过渡层、所述CrN过渡层及所述第二Cr过渡层;
对所述第二Cr过渡层表面做粗糙化处理,以形成所述粗糙表面;
采用化学气相沉积法在所述第二Cr过渡层的所述粗糙表面沉积所述金刚石涂层。
4.根据权利要求3所述的硬质合金涂层刀具的制备方法,其特征在于,在采用化学气相沉积法在所述第二Cr过渡层的所述粗糙表面沉积所述金刚石涂层之前包括步骤:
将沉积有所述第一Cr过渡层、所述CrN过渡层及所述第二Cr过渡层的所述刀具基体置于金刚石颗粒中,以对所述刀具基体表面进行植晶。
5.根据权利要求3所述的硬质合金涂层刀具的制备方法,其特征在于,所述物理气相沉积法为磁控溅射法或电弧离子镀法;所述化学气相沉积法为热丝化学气相沉积法或微波等离子体化学气相沉积法。
6.根据权利要求5所述的硬质合金涂层刀具的制备方法,其特征在于,所述第一Cr过渡层及所述第二Cr过渡层均通过所述电弧离子镀法沉积:
所述第一Cr过渡层的沉积参数为:沉积偏压为-500V~-600V,偏压电源的脉冲范围为50%-80%,电弧靶的靶电流为80A~160A,沉积厚度为0.5μm-0.7μm;
所述第二Cr过渡层的沉积参数为:沉积偏压为-200V~-400V,偏压电源的脉冲范围为50%-80%,电弧靶的靶电流为80A~160A,沉积厚度为0.2μm-0.4μm。
7.根据权利要求5所述的硬质合金涂层刀具的制备方法,其特征在于,所述CrN过渡层通过所述磁控溅射法沉积;
所述CrN过渡层的沉积参数为:通入N2,沉积气压为0.5Pa-1Pa,沉积偏压为-60V~-150V,沉积厚度为1.3μm-1.9μm。
8.根据权利要求4所述的硬质合金涂层刀具的制备方法,其特征在于,采用化学气相沉积法在所述第二Cr过渡层的所述粗糙表面沉积所述金刚石涂层,包括在压力为1~3kPa,灯丝温度为2100℃~2400℃条件下,以氢气、甲烷为反应气体源,利用所述化学气相沉积法在所述植晶后的所述刀具基体表面沉积10-12小时,形成所述金刚石涂层。
9.根据权利要求4所述的硬质合金涂层刀具的制备方法,其特征在于,所述金刚石颗粒的粒径为0.2μm-1μm。
10.根据权利要求1所述的硬质合金涂层刀具的制备方法,其特征在于,所述WC-Co硬质合金的含钴量为5.5%-12%。
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