CN115117205A - 一种硅基雪崩光电二极管的抗辐照加固方法 - Google Patents
一种硅基雪崩光电二极管的抗辐照加固方法 Download PDFInfo
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Abstract
本发明公开一种硅基雪崩光电二极管的抗辐照加固方法,属于半导体光电探测器领域。N型收集环及加固注入区为用于抗辐照的结构,N型收集环用于收集器件外围区域的电流,防止对有效的倍增信号产生干扰;通过在器件外围区域的场氧下方引入一道P型加固注入区,防止该弱P型区域在辐照条件下反型成N型形成漏电流通道,即阻止该区域反型造成N型结截止扩展环、N型收集环与电通道截止环之间的漏电。另外,也保证了雪崩击穿总是发生在器件中心位置的P型雪崩区中。该方法降低了硅基雪崩光电二极管辐照后的暗电流,提高了硅基雪崩光电二极管的抗辐照能力。
Description
技术领域
本发明涉及半导体光电探测器技术领域,特别涉及一种硅基雪崩光电二极管的抗辐照加固方法。
背景技术
半导体光电探测器是基于光生载流子这一基本物理现象,能够将光信号转化成电信号的一种光电器件。典型的半导体光电探测器主要有PIN结构、雪崩光电二极管(Avalanche Photo Diode,APD)结构、金属-半导体-金属(Metal-Semiconductor-Metal,MSM)结构。
其中,硅基雪崩光电二极管是一种可对微弱光甚至单光子进行探测的光电器件,被广泛应用于空间光通讯、空间量子通讯、激光测距、激光时间传输、遥感成像、空间辐照探测器等领域,空间技术及高能粒子实验领域的应用对硅基雪崩光电二极管的抗辐照性能提出新的要求。因此,研究硅基雪崩光电二极管的抗辐照加固方法,降低辐照后的暗电流,提升硅基雪崩光电二极管在空间环境及高能粒子实验领域下的耐辐射损伤特性是一项重要的课题,将对航空航天、军事应用、高能粒子物理等具有重要意义。
发明内容
本发明的目的在于提供一种硅基雪崩光电二极管的抗辐照加固方法,以解决现有硅基雪崩光电二极管抗辐照性能不足,受辐照后暗电流增大的问题。
为解决上述技术问题,本发明提供了一种硅基雪崩光电二极管的抗辐照加固方法,包括:
提供包括P+衬底和P型π外延层在内的体硅外延材料片;
在所述P型π外延层的两端形成电通道截止环;
在所述P型π外延层上进行抗辐照加固注入形成加固注入区;
在所述P型π外延层上形成P型雪崩区;
在所述P型π外延层上形成N+区域、N型结截止扩展环、N型收集环;
在所述P型π外延层形成接触孔及金属电极;
在P型雪崩区上方进行光窗刻蚀,淀积减反膜;
在所述P+衬底的背面进行金属化形成背面金属。
在一种实施方式中,通过如下步骤在所述P型π外延层的两端形成电通道截止环:
在所述P型π外延层的表面涂覆光刻胶,漏出所述P型π外延层的两端,进行电通道截止环光刻;
对所述P型π外延层的两端进行P型注入,去除剩余光刻胶,形成电通道截止环。
在一种实施方式中,通过如下步骤在所述P型π外延层上进行抗辐照加固注入形成加固注入区:
在所述P型π外延层的表面涂覆光刻胶,暴露出形成加固注入区的区域,进行加固注入区域光刻;
进行P型注入,形成抗辐照加固注入区。
在一种实施方式中,通过如下步骤在所述P型π外延层上形成P型雪崩区:
在所述P型π外延层的表面涂覆光刻胶,暴露出形成P型雪崩区的区域,进行P型雪崩区光刻;
通过高能粒子注入机进行P型注入并退火,去除剩余光刻胶,形成P型雪崩区。
在一种实施方式中,通过如下步骤在所述P型π外延层上形成N+区域、N型结截止扩展环、N型收集环:
在所述P型π外延层的表面涂覆光刻胶,进行N+区域、N型结截止扩展环、N型收集环光刻;
进行N+注入,去除剩余光刻胶,形成N+区域、N型结截止扩展环、N型收集环;
其中所述N+区域位于所述P型雪崩区的上方且与其接触,所述N型结截止扩展环位于所述N+区域外侧且与其接触;所述N型收集环位于所述N型结截止扩展环外侧且与其间隔有一个加固注入区;所述电通道截止环位于所述N型收集环外侧且与其间隔有另一个加固注入区。
在一种实施方式中,通过如下步骤在所述P型π外延层形成接触孔及金属电极:
淀积场氧,在场氧的表面涂覆光刻胶,进行接触孔光刻;
在接触孔里淀积金属钨,通过CMP工艺形成钨柱;
淀积金属铝,在铝的表面涂覆光刻胶,刻蚀形成金属电极;所述金属电极位于所述N+区域表面分别将所述N+区域和所述N型收集环引出;所述场氧位于减反膜两侧,将金属电极隔开。
在一种实施方式中,通过如下步骤在P型雪崩区上方进行光窗刻蚀,淀积减反膜:
在场氧上方涂覆光刻胶,进行光窗光刻;刻蚀场氧,形成光窗;
淀积氧化层形成减反膜,去除剩余光刻胶;所述减反膜位于所述N+区域的上方。
在一种实施方式中,通过如下步骤在所述P+衬底的背面进行金属化形成背面金属:
将P+衬底进行减薄;在减薄后的P+衬底背面进行金属淀积,形成背面金属。
在一种实施方式中,所述P型π外延层的厚度为5~100μm。
在本发明提供的硅基雪崩光电二极管的抗辐照加固方法中,N型收集环及加固注入区为用于抗辐照的结构。N型收集环用于收集器件外围区域的暗电流,防止对有效的倍增信号产生干扰;通过在器件外围区域(电通道截止环与N型收集环之间,及N型收集环与N型结截止扩展环之间)的场氧下方引入一道P型加固注入区,防止该弱P型区域在辐照条件下反型成N型形成漏电流通道,即阻止该区域反型造成N型结截止扩展环、N型收集环与电通道截止环之间的漏电。另外,该结构也保证了雪崩击穿总是发生在器件中心位置的P型雪崩区中。本发明的加固方法降低了硅基雪崩光电二极管辐照后的暗电流,提升硅基雪崩光电二极管在空间环境下的耐辐射损伤特性,对航空航天、军事应用、高能粒子物理等具有重要意义。
附图说明
图1是外延材料片的结构示意图。
图2是在P型π外延层的表面形成电通道截止环结构的示意图。
图3是在P型π外延层的表面形成抗辐照加固注入区的示意图。
图4是在P型π外延层的表面形成P型雪崩区的示意图。
图5是在P型π外延层的表面形成N+区域、N型结截止扩展环结构、N型收集环结构的示意图。
图6是在场氧表面涂覆光刻胶并进行通孔光刻的示意图。
图7是淀积金属钨并通过CMP工艺形成通孔的示意图。
图8是在表面淀积金属铝、在金属铝的表面涂覆光刻胶的示意图。
图9是进行光刻、刻蚀形成金属电极的示意图。
图10是在场氧上方重新涂覆光刻胶、以进行光窗光刻的示意图。
图11是刻蚀场氧形成光窗、淀积氧化层形成减反膜的示意图。
图12是在P+衬底的背面进行金属化形成背面金属的示意图。
图13是有无加固注入结构辐照后的暗电流对比示意图。
具体实施方式
以下结合附图和具体实施例对本发明提出的一种硅基雪崩光电二极管的抗辐照加固方法作进一步详细说明。根据下面说明和权利要求书,本发明的优点和特征将更清楚。需说明的是,附图均采用非常简化的形式且均使用非精准的比例,仅用以方便、明晰地辅助说明本发明实施例的目的。
本发明提供了一种硅基雪崩光电二极管的抗辐照加固方法,包括如下步骤:
步骤一:提供如图1所示的外延材料片,所述外延材料片包括P+衬底和P型π外延层;所述P型π外延层的厚度为5~100μm;
步骤二:在所述P型π外延层的表面涂覆光刻胶,所述光刻胶未铺满所述P型π外延层的表面,漏出所述P型π外延层的两端;在所述P型π外延层漏出的两端进行P型注入(即注入硼离子),形成电通道截止环,如图2所示;
步骤三:去除光刻胶,在所述P型π外延层的表面继续涂覆光刻胶,进行P型注入,形成抗辐照加固注入区,如图3所示;
步骤四:去掉涂覆的光刻胶,再重新在所述P型π外延层的表面涂覆光刻胶;通过高能粒子注入机进行P型注入并退火,形成P型雪崩区,如图4所示;
步骤五:去除剩余光刻胶,再重新在所述P型π外延层的表面涂覆光刻胶,进行N+注入(即注入磷离子),如图5所示,形成N+区域、N型结截止扩展环、N型收集环;
步骤六:去除剩余光刻胶,在所述P型π外延层的表面淀积场氧,在场氧表面涂覆光刻胶,并进行接触孔光刻,如图6所示;
步骤七:去除光刻胶,在接触孔里淀积金属钨,通过CMP工艺形成钨柱,如图7所示;
步骤八:在表面淀积金属铝,再在铝的表面涂覆光刻胶,如图8所示;
步骤九:如图9所示,对铝进行金属刻蚀,形成金属电极;
步骤十:去除光刻胶,在场氧上方重新涂覆光刻胶,以进行光窗光刻,如图10所示;
步骤十一:如图11所示,刻蚀中间的场氧形成光窗;淀积氧化层形成减反膜;
步骤十二:最后去除光刻胶,在P+衬底的背面进行金属化形成背面金属,如图12所示。
通过上述方法制备的硅基雪崩光电二极管结构包含正面金属电极、场氧、减反膜、N+区域、P型雪崩区、N型结截止扩展环、N型收集环、电通道截止环、加固注入区、P型π外延层、P+衬底和背面金属。
如图13所示,与无加固注入结构辐照后暗电流的相比,本发明能够有效降低硅基雪崩光电二极管辐照后的暗电流。
上述描述仅是对本发明较佳实施例的描述,并非对本发明范围的任何限定,本发明领域的普通技术人员根据上述揭示内容做的任何变更、修饰,均属于权利要求书的保护范围。
Claims (9)
1.一种硅基雪崩光电二极管的抗辐照加固方法,其特征在于,包括:
提供包括P+衬底和P型π外延层在内的体硅外延材料片;
在所述P型π外延层的两端形成电通道截止环;
在所述P型π外延层上进行抗辐照加固注入形成加固注入区;
在所述P型π外延层上形成P型雪崩区;
在所述P型π外延层上形成N+区域、N型结截止扩展环、N型收集环;
在所述P型π外延层形成接触孔及金属电极;
在P型雪崩区上方进行光窗刻蚀,淀积减反膜;
在所述P+衬底的背面进行金属化形成背面金属。
2.如权利要求1所述的硅基雪崩光电二极管的抗辐照加固方法,其特征在于,通过如下步骤在所述P型π外延层的两端形成电通道截止环:
在所述P型π外延层的表面涂覆光刻胶,漏出所述P型π外延层的两端,进行电通道截止环光刻;
对所述P型π外延层的两端进行P型注入,去除剩余光刻胶,形成电通道截止环。
3.如权利要求2所述的硅基雪崩光电二极管的抗辐照加固方法,其特征在于,通过如下步骤在所述P型π外延层上进行抗辐照加固注入形成加固注入区:
在所述P型π外延层的表面涂覆光刻胶,暴露出形成加固注入区的区域,进行加固注入区域光刻;
进行P型注入,形成抗辐照加固注入区。
4.如权利要求3所述的硅基雪崩光电二极管的抗辐照加固方法,其特征在于,通过如下步骤在所述P型π外延层上形成P型雪崩区:
在所述P型π外延层的表面涂覆光刻胶,暴露出形成P型雪崩区的区域,进行P型雪崩区光刻;
通过高能粒子注入机进行P型注入并退火,去除剩余光刻胶,形成P型雪崩区。
5.如权利要求4所述的硅基雪崩光电二极管的抗辐照加固方法,其特征在于,通过如下步骤在所述P型π外延层上形成N+区域、N型结截止扩展环、N型收集环:
在所述P型π外延层的表面涂覆光刻胶,进行N+区域、N型结截止扩展环、N型收集环光刻;
进行N+注入,去除剩余光刻胶,形成N+区域、N型结截止扩展环、N型收集环;
其中所述N+区域位于所述P型雪崩区的上方且与其接触,所述N型结截止扩展环位于所述N+区域外侧且与其接触;所述N型收集环位于所述N型结截止扩展环外侧且与其间隔有一个加固注入区;所述电通道截止环位于所述N型收集环外侧且与其间隔有另一个加固注入区。
6.如权利要求5所述的硅基雪崩光电二极管的抗辐照加固方法,其特征在于,通过如下步骤在所述P型π外延层形成接触孔及金属电极:
淀积场氧,在场氧的表面涂覆光刻胶,进行接触孔光刻;
在接触孔里淀积金属钨,通过CMP工艺形成钨柱;
淀积金属铝,在铝的表面涂覆光刻胶,刻蚀形成金属电极;所述金属电极位于所述N+区域表面分别将所述N+区域和所述N型收集环引出;所述场氧位于减反膜两侧,将金属电极隔开。
7.如权利要求6所述的硅基雪崩光电二极管的抗辐照加固方法,其特征在于,通过如下步骤在P型雪崩区上方进行光窗刻蚀,淀积减反膜:
在场氧上方涂覆光刻胶,进行光窗光刻;刻蚀场氧,形成光窗;
淀积氧化层形成减反膜,去除剩余光刻胶;所述减反膜位于所述N+区域的上方。
8.如权利要求7所述的硅基雪崩光电二极管的抗辐照加固方法,其特征在于,通过如下步骤在所述P+衬底的背面进行金属化形成背面金属:
将P+衬底进行减薄;在减薄后的P+衬底背面进行金属淀积,形成背面金属。
9.如权利要求1所述的硅基雪崩光电二极管的抗辐照加固方法,其特征在于,所述P型π外延层的厚度为5~100μm。
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