CN114975171A - Substrate cleaning method and substrate cleaning apparatus - Google Patents

Substrate cleaning method and substrate cleaning apparatus Download PDF

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Publication number
CN114975171A
CN114975171A CN202210137595.XA CN202210137595A CN114975171A CN 114975171 A CN114975171 A CN 114975171A CN 202210137595 A CN202210137595 A CN 202210137595A CN 114975171 A CN114975171 A CN 114975171A
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CN
China
Prior art keywords
brush
substrate
cleaning
sliding
wafer
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Pending
Application number
CN202210137595.XA
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Chinese (zh)
Inventor
高桥彰吾
滝口靖史
中岛昇
小篠龙人
土师刚
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN114975171A publication Critical patent/CN114975171A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02096—Cleaning only mechanical cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B08B1/12—Brushes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
    • B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/0209—Cleaning of wafer backside
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention relates to a substrate cleaning method and a substrate cleaning apparatus. The cleaning process performed by relatively sliding the brush with respect to the lower surface of the substrate is quickly completed. The following steps are carried out: holding a lower surface of a substrate having a film formed on an upper surface thereof by a substrate holding section; and a cleaning step of cleaning the substrate by pressing the 1 st brush and the 2 nd brush against the lower surface of the substrate and sliding the brushes in the same sliding direction relative to the lower surface of the substrate.

Description

Substrate cleaning method and substrate cleaning apparatus
Technical Field
The present disclosure relates to a substrate cleaning method and a substrate cleaning apparatus.
Background
In a manufacturing process of a semiconductor device, a semiconductor wafer (hereinafter, referred to as a wafer) as a substrate is subjected to various processes. As one of the processes, there is a process of cleaning a wafer by sliding a brush against a back surface of the wafer. Patent document 1 discloses an apparatus for performing such a cleaning process.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2008-177541
Disclosure of Invention
Problems to be solved by the invention
The present disclosure provides a technique capable of quickly completing a cleaning process performed by relatively sliding a brush with respect to a lower surface of a substrate.
Means for solving the problems
The substrate cleaning method of the present disclosure includes the following steps:
holding a lower surface of a substrate having a film formed on an upper surface thereof by a substrate holding section; and
and a cleaning step of pressing the 1 st brush and the 2 nd brush against the lower surface of the substrate and sliding the brushes in the same sliding direction relative to the lower surface of the substrate to clean the substrate.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present disclosure, the cleaning process performed by relatively sliding the brush with respect to the lower surface of the substrate can be quickly completed.
Drawings
Fig. 1 is a plan view of a cleaning apparatus for performing a treatment according to embodiment 1 of the present disclosure.
Fig. 2 is a longitudinal sectional side view of the cleaning apparatus.
Fig. 3 is a plan view showing the process of the cleaning apparatus.
Fig. 4 is a plan view showing the process of the cleaning apparatus.
Fig. 5 is a plan view showing the processing of the cleaning apparatus.
Fig. 6 is a side view of the cleaning apparatus for performing the treatment according to embodiment 2.
Fig. 7 is a plan view showing the processing of the cleaning apparatus.
Fig. 8 is a plan view showing the processing of the cleaning apparatus.
Fig. 9 is a plan view showing the processing of the cleaning apparatus.
FIG. 10 is a schematic view of a brush of the cleaning device.
Fig. 11 is a plan view of a cleaning apparatus for performing a treatment according to embodiment 3.
Fig. 12 is a plan view of a cleaning apparatus for performing a treatment according to a modification of embodiment 3.
Fig. 13 is a plan view of a cleaning apparatus for performing a treatment according to a modification of embodiment 3.
Fig. 14 is a plan view of a cleaning apparatus for performing a process according to embodiment 4.
Fig. 15 is a plan view of a cleaning apparatus for performing a process according to a modification of embodiment 4.
Fig. 16 is a side view of a cleaning apparatus for performing a process according to embodiment 5.
Fig. 17 is a perspective view of a brush provided in the cleaning device.
Detailed Description
(embodiment 1)
A cleaning apparatus 1 for carrying out the substrate cleaning method according to embodiment 1 of the present disclosure will be described with reference to a plan view of fig. 1 and a vertical sectional side view of fig. 2. In a cleaning apparatus 1 as an embodiment of a substrate cleaning apparatus, cleaning is performed by simultaneously pressing two brushes against a back surface (lower surface) of a wafer W as a circular substrate having a resist film formed on a front surface (upper surface) thereof and sliding the brushes relative to the wafer W. Thus, different positions of the lower surface of the wafer W are simultaneously processed. The wafer W whose back surface has been cleaned in this way is conveyed to an exposure machine, and the resist film is exposed in accordance with a predetermined pattern. In this exposure process, if foreign matter adheres to the back surface of the wafer W, the wafer W is placed on the stage of the exposure machine so as to be lifted from the stage, and the distance between the optical system of the exposure machine and the wafer W deviates from the design value and becomes defocused, but this is prevented by processing with the cleaning apparatus 1.
The cleaning apparatus 1 includes a base 11, a spin chuck 12, a cup 3, and a cleaning processing unit 4. The base 11 is formed in a rectangular shape in plan view, and the wafer W is conveyed from one end side in the longitudinal direction of the base 11 to the cleaning apparatus 1 by a conveying mechanism, not shown, provided outside the cleaning apparatus 1. The one end side is referred to as a front side. The left and right in the following description are left and right when viewed from the rear to the front. The substrate 11 includes a rectangular recess 13 having a longitudinal direction in the front-rear direction, and the recess 13 is configured as a processing area of the wafer W. The front-rear direction is a direction in which the center of the spin chuck 12 (the center of the held wafer W) and a rotation axis (the central axis R1) of a brush for cleaning the wafer W are aligned, which will be described later.
A spin chuck 12 is provided in front of the processing region in the recess 13. The spin chuck 12 is a circular stage that holds the wafer W horizontally by sucking the center portion of the lower surface of the wafer W. The lower side of the spin chuck 12 is connected to a rotation mechanism 15 via a shaft 14, and the rotation mechanism 15 rotates the spin chuck 12 in the circumferential direction so as to rotate the wafer W held by the spin chuck 12 about the vertical axis line, specifically, for example, in the clockwise direction in a plan view (when viewed from the top). 3 (only two are shown in fig. 2) vertical support pins 16 are disposed on the side of the spin chuck 12 at intervals along the rotation direction of the spin chuck 12. The support pins 16 are raised and lowered by the raising and lowering mechanism 17, and the wafer W can be transferred between the above-described transport mechanism, the spin chuck 12, and a non-spin chuck 35 described later.
A cylindrical portion extending upward from the bottom of the base 11 is provided so as to surround the spin chuck 12, the rotation mechanism 15, the support pin 16, and the elevating mechanism 17, and is configured as an air blower 18. The upper end surface of the blower 18 is an inclined surface inclined inward. The inclined surface is provided with ejection ports 19 for ejecting, for example, air upward at intervals in the circumferential direction. When the back surface of the wafer W is sucked and held by the spin chuck 12, the upper end of the blower 18 is brought close to the back surface of the wafer W, and air is blown from the blow-out port 19, thereby preventing the cleaning liquid from adhering to the center portion of the back surface of the wafer W.
A drain port 22 is provided at the bottom of the recess 13 of the base 11. Further, an exhaust pipe 23 for exhausting the inside of the concave portion 13 is provided at a position closer to the blower 18 than the liquid discharge port 22, and the exhaust from the exhaust pipe 23 is performed during the processing of the wafer W. A flange 24 is provided which extends outward from the lower portion of the air knife 18 above the exhaust pipe 23, and the outer end of the flange 24 is bent downward outside the exhaust pipe 23 to prevent the waste liquid from flowing into the exhaust pipe 23.
The cup 3 is formed as a cylindrical body surrounding the air knife 18 and having an upper end portion projecting inward. The cup 3 surrounds the side periphery of the wafer W during the processing to prevent scattering of the waste liquid. When the wafer W is held by the spin chuck 12 or a non-spin chuck 35 described later, the wafer W is held concentrically with the cup 3. The support portions 31 extend from the outer walls of the cup 3 toward the outer edge of the recess 13, and are connected to a horizontal movement mechanism 32 provided on the base 11, and the cup 3 can move back and forth in the recess 13 by the horizontal movement mechanism 32. The front and rear sides of the movement region of the cup 3 are set to the front and rear positions, respectively. Fig. 1 shows the cup 3 in a state of being located at a front position where the center of the cup 3 coincides with the center of the spin chuck 12 in a plan view. The center of the cup 3 at the rear position is located at a position rearward of the blower 18.
The horizontal movement mechanism 32 is connected to the elevation mechanism 33 and can be elevated and lowered together with the cup 3 with respect to the base 11. By this elevating mechanism 33, the cup 3 can be elevated between an upper position where the upper surface of the non-spin chuck 35 (the supporting surface of the wafer W) is higher than the upper surface of the spin chuck 12 (the supporting surface of the wafer W) and a lower position where the upper surface of the non-spin chuck 35 is lower than the upper surface of the spin chuck 12.
Two bridge portions 34 extending forward and backward from the left and right sides of the air blower 18 are formed in the cup 3, and a non-rotating chuck 35 is provided on each bridge portion 34. The non-rotating chuck 35 sucks the outer region of the central portion of the back surface of the wafer W to hold the wafer W horizontally. The non-spin chuck 35 and the spin chuck described above constitute a substrate holding portion, and when processing the center portion of the back surface of the wafer W, the wafer W is held by the non-spin chuck 35 and processed by the brush, and when processing the peripheral portion of the back surface of the wafer W, the wafer W is held by the spin chuck 12 and processed by the brush.
A nozzle 36 is provided in the vicinity of the spin chuck 12 in the region surrounded by the cup 3, and pure water is discharged obliquely upward and rearward as a cleaning liquid, for example. By discharging the cleaning liquid in such a direction, when the wafer W is held by the non-spin chuck 35 at the rear position, the cleaning liquid is supplied to the center portion of the lower surface of the wafer W, and when the wafer W is held by the spin chuck 12 at the front position, the cleaning liquid is supplied to the peripheral portion of the lower surface of the wafer W, and the brush 51 described later slides in the region where the cleaning liquid is supplied.
Next, the cleaning processing section 4 will be described. The cleaning processing section 4 and the spin chuck 12 described above constitute a slide mechanism for sliding the brush against the wafer W to perform cleaning. The cleaning processing unit 4 includes a horizontal circular stage 41 provided in the recess 13. The stage 41 includes a stage main body 42 including an elevating mechanism and rotating mechanisms 43 and 44. The upper portion of the stage 41 is formed as rotating mechanisms 43 and 44 at positions adjacent to each other in the circumferential direction, and the rotating mechanisms 43 and 44 are formed in a fan shape in plan view. The rotation mechanisms 43 and 44 are independently movable up and down by the stage main body 42.
The stage 41 is configured to be rotatable about its central axis R1. Thus, the stage 41 rotates about the longitudinal axis, specifically, the vertical axis. The central axis R1 is located behind the blower 18 and in the vicinity of the peripheral edge of the cup 3 at the front position. The direction in which the center axis R1 and the center of the spin chuck 12 are aligned coincides with the forward and backward movement direction of the cup 3.
As described above, since the stage 41 is rotated, the positions of the rotating mechanisms 43 and 44 are displaced, and the rotating mechanism on the right side when the rotating mechanisms 43 and 44 are both positioned on the front side is denoted by reference numeral 43, and the rotating mechanism on the left side is denoted by reference numeral 44. Above these rotation mechanisms 43 and 44, horizontal circular brushes 51 are provided, respectively. The two brushes 51 are configured similarly to each other, and are made of an elastic member such as sponge or resin, for example, and the upper end surfaces thereof serve as sliding surfaces that are pressed against the lower surface of the wafer W and slide. The lower side of each brush 51 is connected to the rotating mechanisms 43 and 44 via a shaft 52, and each brush 51 rotates around the central axis of the brush 51 by the rotating mechanisms 43 and 44. The central axis of the brush 51 extends in the longitudinal direction, more specifically, the vertical direction. By configuring the cleaning processing section 4 in this manner, each brush 51 rotates about the center axis R1 of the stage 41 as a rotation axis. That is, the movable body can be revolved around the central axis R1. The brush 51 is configured to be rotatable on its own axis by the rotation mechanisms 43 and 44. In this embodiment, the brushes 51A and 51B rotate counterclockwise in a plan view.
In embodiment 1, the two brushes 51 are the 1 st brush and the 2 nd brush. To describe the arrangement of the brushes 51, the two brushes 51 are arranged so as to be close to each other in a plan view along the circumferential direction of the stage 41, and are arranged on the circumferential edge of the stage 41 so that the center of each brush 51 is positioned at an equal distance from the central axis R1. The brushes 51 may be distinguished from each other by the reference numeral 51A for the brush connected to the rotation mechanism 43 and the reference numeral 51B for the brush connected to the rotation mechanism 44.
As described above, the cup 3 moves between the front position and the rear position, and the standby unit 25 is provided behind the cup 3 at the front position and on the left side of the center of the left and right sides of the cup 3. The standby unit 25 is provided below the lower end of the cup so as not to interfere with the cup 3 that is moved in this manner. The standby unit 25 has two recesses opened at the lower side and arranged in the front-rear direction to accommodate the two brushes 51, and the recesses are configured as standby areas 26 for allowing the brushes 51A and 51B to stand by. Therefore, the standby unit 25 is configured to cover the covering portion of the brush 51 from above, and to supply and clean the brushes 51A and 51B waiting in the standby area 26 with the cleaning liquid.
As described above, the brush 51 is configured to be capable of revolving (revolving around the central axis R1 of the stage 41) and moving up and down. The brush 51 moves between a position where it is pressed against the lower surface of the wafer W and cleaned and the standby area 26 by the revolution and the elevation. When the brush 51 and a brush 53 described later are positioned on the lower surface side of the wafer W, a height at which the wafer W is separated from the wafer W and is not processed may be referred to as a non-processing position, and a height at which the wafer W is pressed and processed may be referred to as a processing position.
The standby section 25 is further explained. The left end L1 of the standby region 26 (i.e., the left end of the brush 51 in the standby state in the standby unit 25) is located closer to the center of the cup 3 than the left end L2 of the cup 3. That is, the left end of the standby region 26 does not protrude leftward with respect to the left end of the cup 3. Since the standby unit 25 is provided at a position to the left of the center of the cup 3, the right end of the standby area 26 does not protrude to the right with respect to the right end of the cup. With such a layout, the increase in the width of the cleaning apparatus 1 in the right-and-left direction is suppressed. Further, if the left end L1 of the standby area 26 is aligned with the left end L2 of the cup 3, the left-right increase in size of the apparatus due to the installation of the standby unit 25 can be suppressed.
The cleaning apparatus 1 is provided with a control unit 10 constituted by a computer, and the control unit 10 is provided with a program. The program incorporates a step group so that control signals can be output to each part of the cleaning apparatus 1 to control the operation of each part, and allows a series of processing operations to be performed on the wafer W, which will be described later. Specifically, the rotation of the spin chuck 12 by the rotation mechanism 15, the movement of the cup 3 by the horizontal movement mechanism 32, the lifting and lowering of the support pin 16 by the lifting and lowering mechanism 17, the operation of each part constituting the cleaning processing unit 4, the ejection of air from the blower 18, the ejection of the cleaning liquid from the nozzle 36, and the like are controlled. The movement of each part of the cleaning processing unit 4 is, for example, rotation, revolution, and elevation of the brush 51. The program is stored in the control unit 10 in a state of being stored in a storage medium such as a hard disk, an optical disk, a DVD, or a memory card.
Next, the processing of the wafer W by the cleaning apparatus 1 will be described with reference to fig. 3 as a plan view. In each of the plan views illustrating the processing of the apparatus shown in fig. 3 and later, the portions of the spin chuck 12, the non-spin chuck 35, and the brush which contact the back surface of the wafer W are indicated by solid lines, and the portions which are separated from the back surface of the wafer W are indicated by broken lines or omitted. In order to make it easier to understand the positional relationship between the respective portions, a virtual line L3 extending to the left and right through the center of the spin chuck 12, a virtual line L4 extending to the left and right through the center axis R1 of the stage 41, and a virtual line L5 extending to the front and rear through the center of the spin chuck 12 and the center axis R1 are shown by chain lines.
In a state where the cup 3 is located at the front position and the lower position and the brushes 51 are located in the standby area 26, the wafer W having the resist film formed on the surface thereof is conveyed to the cleaning apparatus 1 by the conveying mechanism as described above, and the support pins 16 are raised to support the wafer W. After the cup 3 moves to the upper position, the support pins 16 are lowered, and the wafer W is transferred to the non-spin chuck 35 and held by suction. On the other hand, the brush 51 descends from the standby area 26, revolves around, and moves below the wafer W while passing through the lower end of the cup 3, and the brushes 51A and 51B are positioned on the right and left sides of the virtual line L5, respectively (fig. 3 (a)).
Then, when the cup 3 moves to the rear position, the cleaning liquid is discharged from the nozzle 36 and supplied to the center of the wafer W. The brush 51 rotates (rotates) and rises from each non-processing position to the processing position, and is pressed against the central portion of the lower surface of the wafer W, and further, by the rotation of the stage 41, the clockwise revolution and the counterclockwise revolution are alternately repeated, and the brush swings left and right without interfering with the non-rotating chuck 35, and slides on the lower surface of the wafer W ((b) of fig. 3). Therefore, the brushes 51 move in the same sliding direction while being arranged at different positions along the sliding direction, which is the revolving direction. That is, when the two brushes 51 slide on the wafer W, the other brush 51 moves to follow the one brush 51 from the rear in the sliding direction. When two brushes 51 are set as a set, the set is moved in the left-right direction by the same amount with respect to the virtual line L5.
During such swinging of the brush 51, the cup 3 moves from the rear position to the front position, and when the entire center portion is slid by the brush 51 and cleaned (fig. 3 (c)), the movement of the cup 3, the ejection of the cleaning liquid from the nozzle 36, and the rotation and revolution of the brush 51 are stopped.
Each brush 51 is lowered to move to the non-processing position, the cup 3 moves to the lower position, the center portion of the lower surface of the wafer W is sucked and held by the spin chuck 12, and the suction and holding of the wafer W by the non-spin chuck 35 is released. Then, the air is blown from the air blower 18, the cleaning liquid is blown from the nozzle 36, and the wafer W is rotated by the spin chuck 12. Since the wafer W moves together with the cup 3 as described above, the discharge position of the cleaning liquid at this time is the peripheral edge of the wafer W. When the brushes 51 revolve and are positioned on the right side with respect to the virtual line L5, for example, the brushes 51 move up to the processing position and rotate (rotate), and are pressed against the peripheral edge of the lower surface of the wafer W to clean the peripheral edge of the wafer W. That is, the wafer W is processed by sliding the brush 51 in the same sliding direction with the rotating direction of the wafer W set as the sliding direction. In this case, the brushes 51 are arranged at different positions in the radial direction of the wafer W.
After the brush 51 is pressed, the wafer W rotates by one or more revolutions to complete the cleaning of the entire peripheral edge portion of the wafer W, and when the cleaning of the entire lower surface of the wafer W is completed, the rotation of the wafer W and the rotation of the brush 51 are stopped, respectively, in accordance with the cleaning performed when the wafer W is held by the non-rotating chuck 35. The brush 51 is separated from the wafer W by descending, turning, and ascending, and passes below the cup 3 to return to the standby area 26, and the discharge of the cleaning liquid from the nozzle 36 is also stopped. Then, the wafer W is transferred to the transfer mechanism and sent out from the cleaning apparatus 1 by the lifting and lowering of the support pins 16.
According to the cleaning apparatus 1, when the central portion of the lower surface of the wafer W is cleaned, the pressed brushes 51A and 51B are moved in the same sliding direction so as to be simultaneously swung as described above. Therefore, even if the rotation amount of the stage 41 for revolving the brush 51 is relatively small, the brushes 51A and 51B can reach desired positions on the right side and the left side of the center portion of the wafer W, respectively, and cleaning can be performed. In this way, by suppressing the rotation amount of the stage 41 necessary for cleaning, the central portion of the lower surface of the wafer W can be quickly cleaned. In addition, even when the peripheral edge portion of the wafer W is processed, the cleaning can be performed simultaneously by the brushes 51, and the cleaning can be completed quickly. As a result, the cleaning apparatus 1 can achieve high productivity. Further, when cleaning the peripheral edge portion of the lower surface of the wafer W, the brushes 51 are arranged at different positions in the radial direction of the rotating wafer W. Therefore, a wide range of the peripheral edge portion of the wafer W can be cleaned at the same time, and high productivity can be obtained more reliably.
In the above-described processing example, when the peripheral edge portion of the lower surface of the wafer W is cleaned, the wafer W is rotated in the clockwise direction and the brushes 51 are rotated in the counterclockwise direction, that is, the wafer W and the brushes 51 are rotated in the opposite directions to each other, so that a relatively strong load is applied to the rear surface of the wafer W, and a good cleaning effect is obtained. However, the relationship of the rotational directions is not limited to this, and the brushes 51 can be rotated (rotated) in any direction. For example, in the example shown in fig. 4, the brush 51B is rotated clockwise, unlike the example shown in fig. 3. Further, the brush 51A may be rotated (rotated) in any direction.
In the above-described processing example, the brush 51 is not revolved and is fixed in position with respect to the rotating wafer W when the peripheral edge portion of the wafer W is cleaned. In the example shown in fig. 5, from a state where the virtual line L5 is located between the brushes 51A and 51B, the brushes are revolved counterclockwise, and the region of the peripheral edge portion of the rotating wafer W where the brush 51 slides is moved from the position near the center of the wafer W toward the peripheral end. The peripheral edge of the wafer W may be cleaned by such an operation. In addition, when the brush 51 is moved in this manner, different positions in the radial direction of the wafer W are cleaned independently by the brush 51, and therefore, the treatment of the peripheral edge portion can be completed quickly.
(embodiment 2)
A cleaning apparatus 1A according to embodiment 2 will be described with reference to a side view shown in fig. 6. The cleaning apparatus 1A includes the cleaning processing section 6 instead of the cleaning processing section 4, and the following description focuses on differences between the cleaning processing section 6 and the cleaning processing section 4. As described above, the stage 41 rotates about the central axis R1, but the rotation mechanisms 43 and 44 are not provided on the stage 41, and the support arm 61 extends horizontally from the stage 41. A circular stage 63 is horizontally provided above the rotating mechanism 62 provided at the distal end of the support arm 61. The stage 63 is rotatable about a vertical center axis R2 by the rotation mechanism 62. In the present embodiment, the rotation direction of the stage 63 is clockwise in a plan view.
Above the stage 63, rotation mechanisms 43A and 44A corresponding to the rotation mechanisms 43 and 44 are provided, respectively, and these rotation mechanisms 43A and 44A are connected to the brush via the shaft 52, and can rotate the brushes as in embodiment 1. The stage 63 can independently move the rotating mechanisms 43A and 44A up and down to move the brushes between the processing position and the non-processing position.
The brush connected to the rotation mechanism 43A is a brush 51 as in embodiment 1. Instead of brush 51, brush 53 is connected to rotation mechanism 44A. In each of the embodiments subsequent to embodiment 2, brush 51 is the 1 st brush, and brush 53 is the 2 nd brush. The brush 53 is configured in a circular shape having the same size as the brush 51 in plan view, and is rotated (rotated) around its center by the rotation mechanism 44A in plan view, but when the elasticity of the brushes 51 and 53 is compared, the elasticity of the brush 53 is lower than that of the brush 51. The brush 53 slides on the wafer W via the upper sliding surface thereof, thereby polishing the lower surface of the wafer W to remove foreign matter adhering to the wafer W. For example, when the sliding surface of the brush 51 against the wafer W is made of resin, the sliding surface of the brush 53 against the wafer W has irregularities thinner than the sliding surface of the brush 51.
In embodiment 2, the movement of the brushes 51 and 53 is controlled so that the brush 51 slides on the lower surface of the wafer W in the area where the brush 53 has slid, and the sliding of the brush 51 removes shavings generated on the lower surface of the wafer W by the sliding of the brush 53. In the present specification, the polishing process is included in the cleaning process, but for convenience of description, the polishing process may be used as the process by pressing the brush 53, and the cleaning process may be used as the process by pressing the brush 51. In embodiment 2, the brushes 51 and 53 rotate (rotate) together in the counterclockwise direction.
In the present embodiment, the rotation of the stage 41 about the central axis R1 is performed to move the brushes 51 and 53 between the standby region 26 and the lower surface of the wafer W, and the revolution of the brushes 51 and 53 during the processing of the wafer W is performed by the rotation of the stage 63 about the central axis R2. Therefore, the center axis R2 is a revolution axis (rotation axis) of the brushes 51 and 53. The respective centers of the brushes 51, 53 are located on the diameter of the stage 63 and equidistant from the center axis R2 in plan view. Further, the brushes 51, 53 are provided close to each other in a plan view, and the diameter of the brushes 51, 53 is substantially the same as the radius of the stage 63. The diameter of a circle formed by the revolving orbit (revolving orbit around the central axis R2) of the brushes 51 and 53 is smaller than the radius of the wafer W, and the brushes 51 and 53 revolve (revolve) so that the revolving orbit overlaps the peripheral edge of the wafer W during the processing of the peripheral edge of the wafer W, which will be described later.
The operation of the cleaning apparatus 1A will be described mainly focusing on the differences from the operation of the cleaning apparatus 1 with reference to fig. 7 to 9. In fig. 7 to 9, the imaginary lines L3 to L5 are shown in the same manner as in fig. 3, but the imaginary lines L4 and L5 drawn so as to pass through the central axis R1 in order to show the position of the revolution axis of the brush during the treatment in fig. 3 are drawn so as to pass through the central axis R2 instead of the central axis R1.
When the wafer W is transferred to the cleaning apparatus 1A, the wafer W is held by suction by the non-spin chuck 35. Then, the brushes 51 and 53 are moved from the standby area 26 to below the wafer W by the rotation of the stage 41, and the arrangement of the center axis R2 (revolution axis of the brush) of the stage 63 and the center of the spin chuck 12 coincides with the forward and backward movement direction of the cup 3 ((a) of fig. 7). Subsequently, the cup 3 is moved to the backward position, and the brush 53 is rotated (rotated) and raised to the processing position while the brush 51 is located at the non-processing position, and is pressed against the lower surface of the wafer W. On the other hand, the cleaning liquid is discharged from the nozzle 36 and supplied to the center of the lower surface of the wafer W.
The brush 53 revolves by the rotation of the stage 63, and is polished in the circumferential direction around the center of the lower surface of the wafer W (fig. 7 (b)). After the brush 53 is pressed, the stage 63 rotates once, and when the entire center portion of the wafer W is polished, the brush 53 stops rotating and moves down to the non-processing position, while the brush 51 rotates (rotates) and moves up to the processing position, and is pressed against the lower surface of the wafer W. The rotation of the stage 63 is continued, and the wafer W is cleaned in the circumferential direction around the center of the lower surface thereof (fig. 7 (c)). After the brush 51 is pressed, the stage 63 rotates once, and when the entire center portion of the wafer W is cleaned, the brush 51 stops rotating and moves down to the non-processing position. Further, the discharge of the cleaning liquid from the nozzle 36 is temporarily stopped.
Then, the cup 3 is moved to the forward position and further moved to the downward position, and the wafer W is held by the spin chuck 12 instead of the non-spin chuck 35 (fig. 8 (a)). Next, the stage 63 is rotated, and the centers of the brushes 51, 53 are aligned with the virtual line L5 in a plan view, and the brush 53 is disposed closer to the center of the wafer W than the brush 51. Meanwhile, the wafer W rotates, and the cleaning liquid is discharged from the nozzle 36 again to be supplied to the peripheral edge of the wafer W.
Then, in a state where the brush 51 is positioned at the non-processing position, the brush 53 rotates (rotates) and moves up to the processing position, and when pressed against the lower surface of the wafer W, the stage 63 rotates, and the brush 53 moves toward the peripheral end of the wafer W (fig. 8 (b)). The brush 53 slides along the circumferential direction of the wafer W by the rotation of the wafer W, and the brush 53 revolves by the rotation of the stage 63, and the sliding position moves toward the circumferential end of the wafer W. In addition, the treatment of the wafer W by only the brush 53 out of the brushes 51 and 53 corresponds to the 1 st sliding step. The collective (simultaneous) rotation of the brushes 51 and 53 by the rotation of the stage 63 corresponds to a rotation step. Then, after the brush 53 is moved to the processing position and immediately before the stage 63 is rotated for a half cycle, the brush 51 is rotated (rotated) and moved to the processing position. When the brush 53 starts to descend toward the non-processing position and the stage 63 rotates by half a cycle, the brushes 51 and 53 are pressed against the wafer W together, and the centers of the brushes 51 and 53 are positioned on the virtual line L5 in plan view (fig. 8 (c)). That is, the pressing force of the brush 51 is applied to the wafer W in a state where the pressing force of the brush 53 remains on the wafer W. The brush 53 moves to such a position and reaches the peripheral edge of the wafer W, thereby polishing the entire peripheral edge of the wafer W.
Further, the stage 63 rotates, and the brush 51 moves toward the peripheral end of the wafer W. On the other hand, the brush 53 is separated from the wafer W and lowered toward the non-processing position (fig. 9 (a)). After the brush 51 is positioned at the processing position, the stage 63 is rotated by half a cycle so that the centers of the brushes 51 and 53 are aligned with the virtual line L5 in a plan view, thereby completing the cleaning of the entire peripheral edge portion of the wafer W by the brush 51 (fig. 9 (b)). In addition, the treatment of the wafer W by only the brush 51 of the brushes 51 and 53 corresponds to the 2 nd sliding step. The wafer W is sent out from the cleaning apparatus 1A by lowering the brush 51 to the non-processing position, stopping the rotation of the brush 51, stopping the discharge of the cleaning liquid from the nozzle 36, and stopping the rotation of the wafer W.
In this manner, in the cleaning apparatus 1A, the brushes 51 and 53 are disposed at different positions in the revolving direction, which is the sliding direction with respect to the wafer W, during the processing of the peripheral edge portion of the wafer W. Further, since the brushes 51 and 53 are provided with timings of concurrently performing polishing and cleaning by pressing the wafers W, the polishing and cleaning processes can be performed quickly. Further, although the brush 51 is moved to the processing position after the brush 53 is moved to the non-processing position in the processing of the center portion of the wafer W, the brushes 51 and 53 may be simultaneously pressed against the wafer W when the brushes 51 and 53 to be used are switched, similarly to the case of the processing of the peripheral portion.
As described above, the brushes 51 and 53 are simultaneously pressed during the processing of the peripheral edge portion of the wafer W, but it is assumed that the brush 51 is pressed with a gap after the brush 53 is separated from the wafer W. In this case, from the state where a relatively large pressing force is applied by the brush 53, the pressing force disappears due to the separation of the brush 53, and the posture of the wafer W changes. The peripheral edge of the wafer W may vibrate vertically due to the change in the posture and the centrifugal force caused by the rotation of the wafer W. If the wafer W is vibrated in this manner, the resist film formed on the surface of the wafer W may be damaged, which may affect the yield of the semiconductor device. By pressing the brushes 51 and 53 simultaneously, the occurrence of such a problem can be suppressed.
Fig. 10 is a schematic view showing the brushes 51 and 53 when the wafer W is pressed together as shown in fig. 8 (c). As described above, the brushes 51 and 53 rotate counterclockwise, i.e., in the same direction. Due to the rotation of the brush 53, the cleaning liquid containing the shavings generated by the polishing of the brush 53 is scattered toward the brush 51. In the figure, the cleaning liquid directed toward the brush 51 is denoted by an arrow with reference numeral 71. On the other hand, the brush 51 rotates in the same direction as the brush 53, and the cleaning liquid (indicated by an arrow denoted by reference numeral 72) scatters from the brush 51 toward the brush 53 with a relatively strong vector. Thus, the vector of the cleaning liquid 71 containing the shavings is cancelled or weakened by the vector of the cleaning liquid 72. Therefore, attachment of shavings to the brush 51 is suppressed. Therefore, the frequency of washing the brush 51 in the standby area 26 can be reduced, and the operation efficiency of the washing apparatus 1A can be improved. Further, the brushes 51 and 53 are rotated together in the clockwise direction, and the operation efficiency can be improved as described above. Further, the number of rotations of the brush 51 when the cleaning liquid 72 is pressed against the wafer W together may be made larger than the number of rotations of the brush 53 so as to increase the vector of the cleaning liquid 72, thereby more reliably preventing the adhesion of the shavings to the brush 51.
(embodiment 3)
The cleaning apparatus 1B according to embodiment 3 will be mainly described with reference to fig. 11, focusing on differences from the cleaning apparatus 1 according to embodiment 1. The cleaning apparatus 1B includes the cleaning processing portion 4 similarly to the cleaning apparatus 1 of embodiment 1, but includes a brush 53 instead of the brush 51A. In the cleaning apparatus 1B, the brush is oscillated with respect to the center portion of the lower surface of the wafer W while the wafer W is held by the non-spin chuck 35 as described in embodiment 1, but the cleaning apparatus differs in that the treatment is performed by using the brush 53 and the brush 51 in this order. Specifically, only the brush 53 of the brushes 51 and 53 is moved to the treatment position, and the brush 53 is rotated (rotated) and oscillated (revolved) in the same manner as the brush 51 of embodiment 1 to perform polishing. Then, only the brush 51 of the brushes 51 and 53 is moved to the treatment position, and the brush 51 is rotated (rotated) and swung to perform cleaning. Further, in order to treat the entire central portion of the wafer W as in embodiment 1, the cup 3 is moved in the front-rear direction during the treatment by the brushes 51 and 53. Specifically, for example, the cup 3 is moved from the rear position to the front position during the treatment with the brush 53, and then returned to the rear position again, and the cup 3 is also moved from the rear position to the front position during the treatment with the brush 51.
After the above processing of the central portion of the lower surface of the wafer W, the peripheral portion of the lower surface of the wafer W is processed while holding the wafer W by the spin chuck 12. Fig. 11 shows a process of treating the peripheral edge portion. First, the center of the brush 53 is positioned on the virtual line L5 in plan view. Then, the wafer W is rotated, and the brushes 51 and 53 are rotated while being lifted from the non-processing position to the processing position, and pressed against the wafer W ((a) of fig. 11). Then, the stage 41 is rotated clockwise, the brush 53 revolves toward the peripheral edge of the wafer W, and the brush 51 revolves toward the peripheral edge of the wafer W so as to follow the brush 53. Therefore, the brush 51 moves along the movement path of the brush 53 in the wafer W in a plan view (fig. 11 (b)). Thus, the polished region moves toward the peripheral end of the rotating wafer W, and then the cleaned region moves toward the peripheral end of the wafer W by the movement of the polished region.
When the brush 53 is positioned at the peripheral edge of the wafer W and the entire peripheral edge of the wafer W is polished, the brush 53 returns to the non-processing position and stops rotating. When the brush 51 is positioned at the peripheral end of the wafer W and the entire peripheral edge of the wafer W is cleaned (fig. 11 (c)), the brush 51 returns to the non-processing position and stops rotating.
In the above-described cleaning apparatus 1B, since the brushes 51 and 53 are simultaneously pressed against the peripheral edge portion of the lower surface of the wafer W and slid in the rotation direction of the wafer W to simultaneously perform polishing and cleaning, the time required for the treatment can be shortened, and high productivity can be obtained. In the cleaning apparatus 1B, the stage 41 is rotated in the above-described direction during the processing of the peripheral edge portion of the wafer W, and the brushes 51 and 53 are revolved and moved so as to face the upstream side in the rotation direction of the wafer W. In this way, by moving the brushes 51 and 53 in the direction opposite to the rotation direction of the wafer W, the friction between the brushes 51 and 53 and the wafer W can be increased, and the polishing force of the brush 53 and the cleaning force of the brush 51 can be further increased.
(1 st modification of embodiment 3)
Fig. 12 shows a cleaning apparatus 1C according to a 1 st modification of embodiment 3. As a difference between the cleaning apparatus 1C and the cleaning apparatus 1B, there is a difference in that the positions where the brushes 51 and 53 are provided are reversed. That is, in comparison with the cleaning apparatus 1 according to embodiment 1, the brush 53 is provided instead of the brush 51B. The processing of the peripheral edge portion of the lower surface of the wafer W by the cleaning apparatus 1C is performed substantially in the same manner as the cleaning apparatus 1B, but the rotation direction of the stage 41 is different from the cleaning apparatus 1B, and is counterclockwise, and the brush 53 and the brush 51 are moved in this order toward the peripheral edge of the wafer W. As shown in the examples of the cleaning apparatuses 1B and 1C, the revolving direction of the brushes 51 and 53 may be either clockwise or counterclockwise, and the arrangement of the brushes 51 and 53 may be appropriately changed depending on the revolving direction.
(modification 2 of embodiment 3)
Fig. 13 shows a cleaning apparatus 1D according to a 2 nd modification of embodiment 3. In the cleaning apparatus 1D, the stage 41 is not provided, and the stages 45A and 45B are provided in a left-right arrangement on the rear side of the blower 18. The stages 45A and 45B are configured to be rotatable about rotation axes R3 and R4 in the vertical direction, respectively, and include horizontally extending arms 46A and 46B, respectively. The respective distal ends of the arms 46A and 46B are provided with lifting mechanisms, and the lifting mechanisms are provided with rotating mechanisms 43A and 44A. As described above, the rotating mechanisms 43A and 43B are connected to the brushes 51 and 53, respectively.
Therefore, the rotation axes R3 and R4 described above constitute revolution axes (rotation axes) of the brushes 51 and 53, respectively. In this manner, an independent rotation axis may be provided for each of the brushes 51 and 53. In the embodiment other than embodiment 3, the plurality of brushes may be revolved around different revolution axes, but it is advantageous to collectively revolve around a common revolution axis as in embodiment 1 or the like, because the device configuration can be simplified and the manufacturing cost of the device can be reduced.
(embodiment 4)
Referring to fig. 14 (a), a cleaning apparatus 1E according to embodiment 4 will be described. In the description of the differences from the cleaning apparatus 1B of embodiment 3, the cleaning apparatus 1E includes three brushes 51A, 51B and 53 provided on the peripheral edge of the stage 41. In a plan view, a brush 51A, a brush 53, and a brush 51B are provided in this order along the circumferential direction of the stage 41, and these brushes 51A, 51B, and 53 are provided on the peripheral edge portion of the stage 41. Further, in a plan view, the brush 53 is disposed close to the brushes 51A, 51B, and the centers of the brushes 51A, 51B, 53 are located at equal distances from the center axis R1 of the stage 41. The stage 41 according to embodiment 4 is provided with three rotation mechanisms which can be raised and lowered in the circumferential direction in the same manner as the rotation mechanism 43 or 44, and the brushes 51A, 51B, and 53 are connected to the rotation mechanisms, respectively, so as to be capable of rotating (rotating on their own axes) and being raised and lowered independently of each other.
In the cleaning apparatus 1E, similarly to the cleaning apparatus 1B of embodiment 3, the cleaning brush 51 and the polishing brush 53 are oscillated by switching the rotation direction of the stage 41, and the center portion of the lower surface of the wafer W is processed. However, the brushes 51A and 51B are controlled to move up and down so that one of the brushes corresponding to the revolution direction (the rotation direction of the stage 41) is pressed against the wafer W, and the brush 53 among the brushes sliding on the wafer W is moved forward.
Specifically, in a state where the wafer W is held by the non-spin chuck 35, for example, as shown in fig. 14 (a), the center of the brush 53 overlaps the virtual line L5 in a plan view, and the brushes 53 and 51A are raised and moved to the processing position from a state where each brush is located at the non-processing position and rotates. Then, the stage 41 is rotated counterclockwise in a plan view, the brush 53 moves to a position shifted to the left with respect to the virtual line L5, and the brush 51A moves to follow the brush 53 (fig. 14 (b)). That is, in the brush array body configured by arranging the brushes 51A, 53, 51B in the rotation direction (revolution direction), the brush 51B is disposed at a position lower than the other brushes, and the first cleaning step 1 is performed as if the brush is not used.
When the brush 53 is separated from the imaginary line L5 by a predetermined amount, the rotational direction of the stage 41 is switched to the clockwise direction in plan view. When the rotation direction is switched in this manner, the brush 51A is lowered and moved to the non-processing position, and the brush 51B is raised and moved to the processing position. Then, by the rotation of the stage 41, the brush 53 goes to a position shifted to the right with respect to the virtual line L5, and the brush 51B moves following the brush 53 (fig. 14 (c)). That is, the second cleaning step 2 is performed in which the brush 51A is disposed at a position lower than the other brushes in the brush array, and the unused brush is set. When the position of the brush 53 is separated from the imaginary line L5 by a predetermined amount, the rotational direction of the stage 41 is switched to the counterclockwise direction in plan view. When the rotation direction is switched in this manner, brush 51A moves to the treatment position and brush 51B moves to the non-treatment position, and brush 53 moves to a position shifted to the left with respect to virtual line L5 by the rotation of stage 41. The movement and the elevation of the brush 53 are repeated to process the center portion of the wafer W.
The cleaning apparatus 1E can simultaneously polish and clean the center portion of the lower surface of the wafer W as described above, and therefore, high productivity can be obtained. Note that, details of the processing of the peripheral edge portion of the lower surface of the wafer W are omitted, and for example, the processing may be performed by using one of the two brushes 51(51A, 51B) and the brush 53 and sliding each brush on the wafer W as described in embodiment 3.
(modification of embodiment 4)
In the cleaning apparatus 1F according to the modification of embodiment 4, two brushes 53 (denoted by reference numerals 53A and 53B) and one brush 51 may be provided, unless a difference from the cleaning apparatus 1E is described with reference to fig. 15 (a). The brushes 53A, 53B are provided at positions where the brushes 51A, 51B are provided in the cleaning device 1E, respectively, and the brush 51 is provided at a position where the brush 53 is provided in the cleaning device 1D. Therefore, the brushes 53B, 51, and 53A are arranged in this order in a plan view on the peripheral edge of the stage 41.
When the center portion of the lower surface of the wafer W is processed, the brushes are oscillated by switching the rotation direction of the stage 41, as in the case of the cleaning apparatus 1E. Then, the brush sliding on the lower surface of the wafer W is controlled to move up and down so that the brush 53 is advanced. Specifically, when the stage 41 is rotated counterclockwise as shown in fig. 15 (B), the brushes 53B and 51 are located at the treatment position, and the brush 53A is located at the non-treatment position. That is, the first cleaning step 1 is performed in which the brush 53A is disposed at a position lower than the other brushes in the brush array body configured by arranging the brushes 53A, 51, 53B in the rotation direction (revolution direction) and the brush array body is set as an unused brush. Then, as shown in fig. 15 (c), when the stage 41 is rotated clockwise, the brushes 53B and 51 are positioned at the treatment position, and the brush 53B is positioned at the non-treatment position. That is, the second cleaning step 2 is performed in which the brush 53B is disposed at a position lower than the other brushes in the brush array, and the unused brush is set.
In the cleaning apparatus 1F, polishing and cleaning can be performed simultaneously, and high productivity can be obtained. Since the brush 53 polishes the wafer W, the brush 53 is more likely to be deteriorated due to a larger frictional force received from the wafer W when sliding than the brush 51. However, in the cleaning device 1F, since the two brushes 53 are used in a switched manner as described above, there is an advantage that the brush 53 can be made longer in life and the frequency of replacement of the brush 53 can be reduced.
(embodiment 5)
Fig. 16 (a) and (B) show a cleaning apparatus 1G according to embodiment 5, and the cleaning apparatus 1G has a structure in which a brush 55 is provided instead of the brush 53 of the cleaning apparatus 1B according to embodiment 3 described in fig. 11, and in the cleaning apparatus 1G, the brushes 51 and 55 correspond to the 1 st brush and the 2 nd brush, respectively. The brush 55 is used for both grinding and cleaning. When the brush 55 is described with reference to the perspective view of fig. 17, the brush 55 includes a circular and horizontal base portion 56, and the shaft 52 is connected to the center of the base portion 56 from below. The brush 55 is connected to the rotating mechanism 44 via the shaft 52, and can rotate and move up and down in the circumferential direction.
A substantially annular polishing portion 57 is provided along the peripheral edge of the base portion 56. The polishing portion 57 is formed by providing polishing members having an arc shape in plan view with a space in the circumferential direction of the base portion 56, and a cleaning liquid discharge groove 59 is formed between the polishing members. The polishing portion 57 corresponds to the above-described brush 53 for polishing, and an upper end surface of the polishing portion 57 constitutes a sliding surface 57A (1 st sliding surface) with respect to the wafer W. The polishing portion 57 is, for example, sheet-shaped, but is shown thicker in fig. 16 than in fig. 17 for convenience. Further, an annular cleaning portion 58 is provided along the circumferential direction of the base portion 56, surrounded by the polishing portion 57. The cleaning portion 58 corresponds to the brush 51, and an upper end surface of the cleaning portion 58 constitutes a sliding surface 58A (2 nd sliding surface) with respect to the wafer W. Like the brush 51, the cleaning portion 58 has elasticity, and the sliding surface 58A is located above the sliding surface 57A in a state where the brush 55 is not pressed against the wafer W and the cleaning portion 58 is not subjected to the pressing force from the wafer W. Fig. 17 shows the cleaning portion 58 in a state where the pressing force is not applied, and fig. 16 also shows the cleaning portion 58 in a case where the pressing force is not applied, by a broken line.
When brush 55 is pressed against wafer W, cleaning portion 58 is deformed by its elasticity, and the heights of sliding surfaces 57A and 58A can be aligned. When the wafer W is polished, the brush 55 is located at a polishing processing position (1 st position) where the sliding surfaces 57A and 58A are pressed against the lower surface of the wafer W together, and when the wafer W is cleaned, the brush 55 is located at a cleaning processing position (2 nd position) where only the sliding surface 58A is pressed against the lower surface of the wafer W.
The processing of the cleaning apparatus 1G will be described mainly focusing on the difference from the cleaning apparatus 1B with reference to fig. 16. First, when the center portion of the lower surface of the wafer W is processed, the brush 55 located at the polishing processing position rotates and swings, and polishing is performed (fig. 16 (a)). That is, the brush 55 located at the polishing treatment position is used instead of the brush 53 to perform polishing. At this time, the brush 51 is located at the non-treatment position. After the polishing, a disposing step is performed in which the brush 51 is positioned at the treatment position and the brush 55 is lowered toward the cleaning treatment position. Then, the central portion of the lower surface of the wafer W is cleaned by the oscillation of the brushes 51 and 55 (fig. 16 (b)). In order to perform cleaning in this manner, when the brushes 51 and 55 are pressed against the wafer W, the upper surface of the brush 51 (the sliding surface against the wafer W) is lower than the sliding surface 58A when the pressing force from the wafer W is not received and is higher than the sliding surface 57A of the polishing portion 57. Since the brush 55 is configured to have such a positional relationship in height, the above-described polishing can be performed, and the treatment can be performed using both the brushes 51 and 55 at the time of cleaning, the number of brushes provided in the apparatus can be reduced, and the cleaning treatment can be completed quickly.
Although only the treatment of the central portion of the wafer W has been specifically described, the treatment by the brush 53 in the cleaning apparatus 1B may be performed by the brush 55 disposed at the polishing treatment position when the peripheral portion of the lower surface of the wafer W is treated. In the other embodiments, the polishing process by the brush 53 may be performed by the brush 55 disposed at the polishing process position. The sliding surfaces of the brushes 51 and 53 with respect to the wafer W are shown as circular, but may be annular as in the case of the polishing portion 57 and the cleaning portion 58 of the brush 55.
In the above embodiments, the film formed on the front surface of the wafer W is a resist film, but the back surface of the wafer W can be cleaned regardless of the type of the film formed. In the embodiments, the brushes are described to rotate when the wafer W slides, but the brushes may be configured to slide with respect to the wafer W by the rotation of the wafer W and/or the revolution of the brushes without such rotation, and to perform cleaning (including polishing). Therefore, the brush may not rotate. The number of brushes is not limited to the above example, and any number of brushes may be used for cleaning, or three or more brushes may be simultaneously pressed against the wafer W for cleaning (including polishing).
In addition, although the polishing of both the peripheral edge portion and the central portion of the wafer W has been described with respect to the respective embodiments in which the cleaning apparatus includes the brush 53, the present invention is not limited to such a processing example, and, for example, only the central portion may be cleaned, and only the peripheral edge portion may be polished and cleaned. The standby unit 25 is not limited to the arrangement example shown in fig. 1 and the like, and may be arranged at a position overlapping with a region where the brushes 51 and 53 are rotated by the stage 41, and may be arranged at a position closer to the rear of the apparatus, for example.
The embodiments disclosed herein are to be considered in all respects as illustrative and not restrictive. The above-described embodiments may be omitted, replaced, changed, or combined in various forms without departing from the scope of the appended claims and the gist thereof.

Claims (20)

1. A method for cleaning a substrate, wherein,
the substrate cleaning method comprises the following steps:
holding a lower surface of a substrate having a film formed on an upper surface thereof by a substrate holding section; and
and a cleaning step of simultaneously pressing the 1 st brush and the 2 nd brush against the lower surface of the substrate and sliding the brushes in the same sliding direction relative to the lower surface of the substrate to clean the substrate.
2. The method of cleaning a substrate according to claim 1,
the cleaning process includes the following steps: the 1 st brush and the 2 nd brush are arranged at different positions in the radial direction of the substrate, and are rotated and slid on the substrate.
3. The method of cleaning a substrate according to claim 1,
the 1 st brush has a higher elasticity than the 2 nd brush,
the cleaning process includes the following steps: the 1 st brush and the 2 nd brush are slid with respect to the substrate such that the 1 st brush follows the 2 nd brush.
4. The substrate cleaning method according to claim 3,
the substrate cleaning method comprises the following steps: rotating an array of brushes arranged in the order of the 1 st brush, the 2 nd brush, and the 1 st brush or arranged in the order of the 2 nd brush, the 1 st brush, and the 2 nd brush in the rotation direction around a rotation axis extending in the longitudinal direction in the clockwise direction and the counterclockwise direction in a plan view,
the cleaning process includes:
a 1 st cleaning step of, during the clockwise rotation of the array, disposing one brush constituting the array at a position lower than the other brushes without using the brush, and sliding the 2 nd brush and a 1 st brush following the 2 nd brush on the substrate by the rotation; and
and a 2 nd cleaning step of, during the counterclockwise rotation of the array, setting one brush, which is different from the unused brush in the 1 st cleaning step, constituting the array as an unused brush and arranging the unused brush at a position lower than the other brushes, and sliding the 2 nd brush and a 1 st brush following the 2 nd brush on the substrate.
5. The substrate cleaning method according to claim 1,
the substrate cleaning method comprises the following steps:
a 1 st sliding step of sliding the substrate while pressing only the 1 st brush out of the 1 st brush and the 2 nd brush against the lower surface of the substrate; and
a 2 nd sliding step of sliding the 1 st brush and the 2 nd brush by pressing only the 2 nd brush against the lower surface of the substrate,
the cleaning process includes the following steps: after the 1 st sliding step and before the 2 nd sliding step, the 1 st brush is lowered and the 2 nd brush is raised, and the 2 nd brush is pressed against the substrate with the 1 st brush pressed against the substrate.
6. The substrate cleaning method according to claim 5, wherein,
the substrate cleaning method comprises the following steps: a rotation step of rotating the 1 st brush and the 2 nd brush together around a rotation axis extending in a longitudinal direction, with a circle overlapping the substrate held by the substrate holding portion as a rotation orbit,
the cleaning step, the 1 st sliding step, and the 2 nd sliding step are all performed during the rotation step, and the sliding direction of the 1 st brush and the 2 nd brush in the cleaning step is the rotation direction,
the 1 st sliding step is a step of rotating the 1 st brush along a 1 st arc constituting the circle while pressing the first brush against the substrate,
the 2 nd sliding step is a step of rotating the 2 nd brush along a 2 nd arc which forms the circle and is different from the 1 st arc in a state where the 2 nd brush is pressed against the substrate.
7. The method for cleaning a substrate according to any one of claims 1 to 6,
the 1 st brush has a higher elasticity than the 2 nd brush,
the cleaning process includes: and a rotating step of rotating the 1 st brush and the 2 nd brush in the same direction in a plan view and pressing the brushes against the lower surface of the substrate.
8. The method of cleaning a substrate according to claim 7,
the rotating step includes the steps of: the rotation speed of the 1 st brush is larger than that of the 2 nd brush.
9. The method for cleaning a substrate according to any one of claims 1 to 6,
the 2 nd brush includes a 1 st sliding surface of a 1 st height and a 2 nd sliding surface having elasticity and higher than the 1 st height, which respectively slide with respect to the substrate,
the substrate cleaning method comprises the following steps: the 2 nd brush is moved up and down between a 1 st position where the 1 st sliding surface and the 2 nd sliding surface contact the substrate and a 2 nd position where only the 2 nd sliding surface of the 1 st sliding surface and the 2 nd sliding surface contacts the substrate,
the cleaning process includes: a placement step of placing the 1 st brush at a position where a sliding surface of the 1 st brush slides with respect to the substrate in a state where the 2 nd brush is located at the 2 nd position,
the sliding surface of the 1 st brush in the arranging step is lower than the 1 st sliding surface and higher than the 2 nd sliding surface when the pressing force is not applied to the substrate.
10. The method for cleaning a substrate according to any one of claims 1 to 6,
a covering part for covering the 1 st brush and the 2 nd brush from the upper part is arranged,
the substrate cleaning method comprises the following steps: the 1 st brush and the 2 nd brush are collectively rotated around a rotation axis extending in a longitudinal direction, and are moved between a standby area where the 1 st brush and the 2 nd brush are standby and a position where the 1 st brush and the 2 nd brush are respectively pressed against the substrate below the covering portion.
11. The method of cleaning a substrate according to claim 10,
a cylindrical body surrounding the side periphery of the substrate held by the substrate holding portion,
if the direction in which the center of the substrate held by the substrate holding portion and the rotation axis are aligned is defined as a front-rear direction:
the left end of the standby area does not protrude leftward from the left end of the cylinder,
the right end of the standby area does not protrude rightward from the right end of the cylinder.
12. A substrate cleaning apparatus, wherein,
the substrate cleaning apparatus includes:
a substrate holding section for holding a lower surface of a substrate having a film formed on an upper surface thereof;
1 st and 2 nd brushes; and
and a slide mechanism for pressing the 1 st brush and the 2 nd brush against the lower surface of the substrate and sliding the brushes in the same sliding direction relative to the lower surface of the substrate to clean the substrate.
13. The substrate cleaning apparatus according to claim 12,
the slide mechanism disposes the 1 st brush and the 2 nd brush at different positions in a radial direction of the substrate,
the substrate cleaning apparatus includes a rotating mechanism for rotating the 1 st brush and the 2 nd brush to slide on the substrate.
14. The substrate cleaning apparatus according to claim 12,
the 1 st brush has a higher elasticity than the 2 nd brush,
the sliding mechanism slides the 1 st brush and the 2 nd brush relative to the substrate so that the 1 st brush follows the 2 nd brush.
15. The substrate cleaning apparatus according to claim 14,
an arrangement body of brushes arranged in the rotation direction in the order of the 1 st brush, the 2 nd brush and the 1 st brush or in the rotation direction in the order of the 2 nd brush, the 1 st brush and the 2 nd brush around a rotation axis extending in the longitudinal direction is provided,
the slide mechanism includes: a turning mechanism that turns the array body in a clockwise direction and a counterclockwise direction in a plan view; and a lifting mechanism for lifting the 1 st brush and the 2 nd brush respectively,
in the clockwise rotation process of the array, one brush constituting the array is set as an unused brush and is arranged at a position lower than the other brushes, the 2 nd brush and the 1 st brush following the 2 nd brush are slid on the substrate by the rotation, and,
in the counter-clockwise rotation of the array, one brush that is different from the unused brush in the clockwise rotation and that constitutes the array is disposed at a position lower than the other brushes, and the 2 nd brush and the 1 st brush following the 2 nd brush are slid on the substrate.
16. The substrate cleaning apparatus according to claim 12,
the sliding mechanism comprises a lifting mechanism which enables the 1 st brush and the 2 nd brush to respectively lift, and the following states are formed:
a 1 st sliding state in which only the 1 st brush out of the 1 st brush and the 2 nd brush is pressed against and slid on the lower surface of the substrate;
a 2 nd sliding state in which only the 2 nd brush out of the 1 st brush and the 2 nd brush is pressed against the lower surface of the substrate and is slid; and
after the 1 st sliding state and before the 2 nd sliding state, the 1 st brush is lowered and the 2 nd brush is raised, and the 2 nd brush is pressed against the substrate in a state where the 1 st brush is pressed against the substrate.
17. The substrate cleaning apparatus according to any one of claims 12 to 15,
the 1 st brush has a higher elasticity than the 2 nd brush,
the substrate cleaning apparatus is provided with a rotating mechanism for rotating the 1 st brush and the 2 nd brush in the same direction in a plan view.
18. The substrate cleaning apparatus according to any one of claims 12 to 15, wherein,
the 2 nd brush includes a 1 st sliding surface of a 1 st height and a 2 nd sliding surface having elasticity and higher than the 1 st height, which respectively slide with respect to the substrate,
the substrate cleaning apparatus is provided with a lifting mechanism which lifts and lowers the 2 nd brush between a 1 st position where the 1 st sliding surface and the 2 nd sliding surface contact the substrate and a 2 nd position where only the 2 nd sliding surface of the 1 st sliding surface and the 2 nd sliding surface contacts the substrate,
the sliding mechanism is configured to arrange the 1 st brush at a processing position where a sliding surface of the 1 st brush slides with respect to the substrate in a state where the 2 nd brush is located at the 2 nd position,
the sliding surface of the 1 st brush at the processing position is lower than the 1 st sliding surface when a pressing force is not applied to the substrate and higher than the 2 nd sliding surface.
19. The substrate cleaning apparatus according to any one of claims 12 to 15,
the substrate cleaning apparatus includes:
a covering portion that covers the 1 st brush and the 2 nd brush from above; and
and a turning mechanism which turns the 1 st brush and the 2 nd brush together around a turning axis extending in the longitudinal direction and moves them between a standby region where the 1 st brush and the 2 nd brush stand by and a position where the 1 st brush and the 2 nd brush are respectively pressed against the substrate below the covering portion.
20. The substrate cleaning apparatus according to claim 19,
a cylindrical body surrounding the side periphery of the substrate held by the substrate holding portion,
if the direction in which the center of the substrate held by the substrate holding portion and the rotation axis are aligned is defined as a front-rear direction:
the left end of the standby area does not protrude leftward from the left end of the cylinder,
the right end of the standby region does not protrude rightward from the right end of the cylindrical body.
CN202210137595.XA 2021-02-22 2022-02-15 Substrate cleaning method and substrate cleaning apparatus Pending CN114975171A (en)

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