JP3625331B2 - Cleaning device and cleaning method - Google Patents

Description

[0001]
[Technical field to which the invention belongs]
The present invention relates to a cleaning apparatus and a cleaning method for cleaning a substrate such as a semiconductor wafer.
[0002]
[Prior art]
In general, in a manufacturing process of a semiconductor manufacturing apparatus, in order to form, for example, a circuit or an electrode pattern on a substrate, for example, a semiconductor wafer, the circuit pattern is reduced using a photolithography technique and transferred to a photoresist. A series of development processing is performed.
[0003]
In such a process, a resist solution is applied onto a semiconductor wafer, and then an exposure process and a development process are performed. Before such a series of predetermined processes, a circuit pattern defect or a wiring short-circuit occurs. In order to prevent this, it is necessary to clean the surface of the semiconductor wafer to which the resist solution is applied, and also to clean the back surface of the semiconductor wafer in order to prevent defocus and particle generation during exposure.
[0004]
For example, Japanese Patent Laid-Open No. 2-271622 is known as a cleaning apparatus for cleaning such a semiconductor wafer. In this technique, the semiconductor wafer is vibrated in order to remove the foreign matter adhering to the semiconductor wafer, and the foreign matter attached to the semiconductor wafer is removed by contacting a brush rotating at a predetermined rotation speed.
[0005]
[Problems to be solved by the invention]
However, in the above-described removal apparatus, since the brush rotating at a predetermined rotational speed is brought into contact with the rotating semiconductor wafer in the radial direction, the rotational movement distance of the semiconductor wafer differs from the center portion to the peripheral portion of the semiconductor wafer. There is a problem that damage to the cleaning surface of the semiconductor wafer occurs due to the difference in rotational movement distance, and the degree of damage varies depending on the portion of the cleaning surface of the semiconductor wafer, resulting in damage unevenness.
[0006]
In addition, the cleaning liquid is supplied from the nozzle to the vicinity of the brush in contact with the semiconductor wafer, but this cleaning liquid is not supplied to the entire area of the brush and a part of the brush comes into contact with the drying portion of the semiconductor wafer, which may damage the semiconductor wafer. Yes, there is a problem that damage increases. Further, although the cleaning liquid is supplied from the nozzle, this cleaning liquid cannot supply the same amount of cleaning liquid to the entire area of the brush, and there is a risk that unevenness in the cleaning process may occur.
[0007]
The present invention has been made under such circumstances. The purpose of the present invention is to reliably remove unnecessary portions adhering to the substrate and to prevent damage to the substrate during cleaning when cleaning the substrate. It is an object of the present invention to provide a cleaning apparatus and a cleaning method that can perform the above-described process.
[0008]
[Means for Solving the Problems]
In order to solve the above problems, the present invention provides a cleaning apparatus for cleaning a substrate,
Holding means for holding the substrate;
Rotating means for rotating the substrate held by the holding means;
A cleaning unit provided on at least one side of the substrate held by the holding means,
The cleaning unit is provided so as to be able to contact the substrate.Having a plurality of cleaning members, the plurality of cleaning members are arranged from the central portion to the peripheral portion of the substrate,Provided is a cleaning apparatus that rotates based on rotation of a substrate that is rotated by the rotating means while being in contact with the substrate.
[0009]
Further, the present invention is a cleaning apparatus for cleaning a substrate, wherein the cleaning apparatus for cleaning a substrate includes a holding means for holding the substrate, a rotating means for rotating the substrate held by the holding means, and the substrate. A cleaning member that is provided so as to be capable of contacting the substrate and that rotates based on the rotation of the substrate rotated by the rotating unit in a state of contacting the substrate, and is provided on at least one surface side of the substrate held by the holding unit. A cleaning section provided;A cleaning liquid is supplied to the rear side of the cleaning member in the rotation direction of the substrate.Cleaning liquid supply means;Gas is supplied to the front side of the cleaning member in the rotation direction of the substrate.And a gas supply means.
[0010]
Furthermore, the present invention is a cleaning apparatus for cleaning a substrate,
Holding means for holding the substrate;
Rotating means for rotating the substrate held by the holding means;
A cleaning unit provided on at least one side of the substrate held by the holding means,
The cleaning unit includes at least one cleaning member provided so as to be able to contact the substrate, a driving unit that rotationally drives the cleaning member, a state in which the cleaning member is rotationally driven, a free state, and substantially There is provided a cleaning device comprising a control means for controlling to any one of the fixed states.
[0011]
Furthermore, the present invention is a cleaning apparatus for cleaning a substrate,
Holding means for holding the substrate;
Rotating means for rotating the substrate held by the holding means;
At least one cleaning member provided in contact with the substrate, drive means for rotationally driving the cleaning member, a state in which the cleaning member is rotationally driven, a free state, and substantially fixed A cleaning unit having control means for controlling any of the states,
Cleaning liquid supply means for supplying a cleaning liquid to the rear side of the cleaning member in the rotation direction of the substrate;
A cleaning apparatus comprising: a gas supply unit configured to supply a gas to a front side of the cleaning member in the rotation direction of the substrate.
[0013]
Furthermore, the present invention includes a step of holding a substrate,On the rear side in the rotation direction of the substrate of the cleaning memberA step of supplying a cleaning liquid, a step of rotating the held substrate, a cleaning member abutting on the at least one surface side of the substrate, and cleaning the substrate by rotating the cleaning member based on the rotation of the substrate And a process ofToward the front side of the cleaning member in the rotation direction of the substrateAnd a step of supplying a gas for drying.
Still further, the present invention provides a step of holding the substrate, a step of supplying a cleaning liquid to at least one side of the substrate, a step of rotating the held substrate, and a cleaning member abutting on the at least one side of the substrate And the step of cleaning the substrate by rotating the cleaning member based on the rotation of the substrate, and the step of supplying a drying gas toward the outside of the substrate. A cleaning method is provided.
[0014]
According to the present invention, the cleaning unit is provided on at least one surface side of the substrate, and the cleaning unit includes at least one cleaning member provided so as to be able to contact the substrate, and the cleaning member contacts the substrate. In this state, the substrate is rotated based on the rotation of the substrate rotated by the rotating means. That is, the cleaning member rotates following the substrate based on the difference in rotational movement in the radial direction of the rotating substrate. Therefore, damage due to contact between the contact portion and the substrate can be suppressed.
[0015]
Further, in another aspect, the cleaning member can be controlled to rotate, drive, free, or substantially non-rotated, so that the cleaning member is formed on the substrate or the portion of the substrate or on the substrate. A desired cleaning mode can be selected according to the type of film.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment in which the present invention is applied to a cleaning apparatus used in a resist coating / developing apparatus will be described.
First, before describing a cleaning apparatus according to an embodiment of the present invention, the overall configuration of a coating / developing apparatus will be briefly described with reference to FIG. The coating / developing apparatus includes a carrier stage 1 on which a carrier 11 that accommodates and transports a plurality of semiconductor wafers, a coating / development processing unit 2 that performs coating / developing processing on the semiconductor wafer W, and a carrier stage 1. A transfer mechanism 3 is provided between the processing unit 2 and the carrier 11 on the stage 1 for transferring the semiconductor wafer between the processing unit 2. Then, the carrier 11 is carried into or out of the apparatus at the carrier stage 10. The transfer mechanism 3 has a transfer arm 12, and the transfer arm 12 transfers the semiconductor wafer W between the carrier 11 and the processing unit 2.
[0017]
The coating / development processing unit 2 includes a front first unit 2a and a rear second unit 2b. Each of the first unit 2a and the second unit 2b has passages P1 and P2 in the center, and each processing unit is disposed on both sides of the passages P1 and P2. And the relay part 15 is provided between these 1st and 2nd units 2a and 2b.
[0018]
The first unit 2a includes a main arm 13 movable along the passage P1, and further includes a cleaning device 20 for cleaning the back surface of the semiconductor wafer on one side of the passage P1, and a water cleaning device for cleaning the surface of the semiconductor wafer. 21, an adhesion processing unit 22, and a cooling processing unit 23, and two coating devices 25 on the other side. The main arm 13 transfers the semiconductor wafer W to and from the arm 12 of the transfer mechanism 3, and loads and unloads the semiconductor wafer W to and from each processing unit of the first unit 2 a, and further transmits a semiconductor to the relay unit 15. It has a function of delivering the wafer W.
[0019]
The second unit 2b includes a main arm 14 that can move along the path P2, and further includes a plurality of heat treatment units 26 on one side of the path P2, and two development processing units 27 on the other side. I have. An interface 28 to which the exposure device 29 can be attached is provided at the rear end of the second unit 2b. The main arm 14 has a function of transferring the semiconductor wafer W to and from the relay unit and loading / unloading the semiconductor wafer W to / from each processing unit of the second unit 2b.
[0020]
In the coating / developing apparatus configured as described above, the semiconductor wafer W in the carrier 11 is transferred to the main arm 13 of the first unit by the arm 12 of the transfer mechanism 3 and transferred to the back surface cleaning apparatus 20 by the main arm 13. Monkey. Then, the back surface of the semiconductor wafer W is cleaned by the cleaning device 20.
[0021]
Similarly, the semiconductor wafer W is transferred to the surface cleaning device 21 by the main arm 13 and the surface which is the circuit forming surface of the semiconductor wafer W is cleaned. Further, the surface is subjected to a hydrophobic treatment by the adhesion processing unit 22 and cooled by the cooling processing unit 23, and then a photoresist film, that is, a photosensitive film is applied and formed by the coating device 25.
[0022]
Then, after this photoresist film is heated by the heat processing unit 26 and subjected to a pre-baking process, a predetermined pattern is exposed by the exposure device 29 disposed at the rear end of the second unit 2b. The exposed glass substrate is transported into the development processing unit 27 and developed by the developer, and then returned to the original carrier 11 by the main arms 14 and 13 and the arm 12 of the transport mechanism 3, for example.
[0023]
Next, the back surface cleaning apparatus 20 according to an embodiment of the present invention will be described. As shown in the cross-sectional and plan views of FIGS. 2 and 3, the cleaning apparatus 20 includes a holding mechanism 30 that holds the peripheral edge of the semiconductor wafer W, and a lower surface side of the semiconductor wafer W held by the holding mechanism 30. And a cleaning unit 31 provided in the apparatus.
[0024]
The holding mechanism 30 holds the semiconductor wafer W by engaging with the peripheral portion of the semiconductor wafer W so as to extend radially from the rotary chuck 32 and a portion corresponding to the peripheral portion of the semiconductor wafer W. Three holding members 33 having the holding portions 70 and six supporting members 34 having the same configuration and having support portions 71 for supporting the peripheral edge portion of the semiconductor wafer W are provided. The three holding portions 70 and the six support portions 71 are provided so that each holding portion 70 is sandwiched between the two support portions 71.
[0025]
Further, as shown in FIG. 2, the holding mechanism 30 includes a small-diameter cylindrical portion 37 that extends downward from the bottom of the rotary chuck 32 and is supported via a fixed portion 35 bearing portion 36. A belt 39 is wound around a pulley 38 provided outside the cylindrical portion 37, and the belt 39 can rotate around a vertical axis. The belt 39 is stretched around a drive shaft of a motor 40 as drive means, and the motor 40 and the belt 39 constitute rotating means for rotating the holding mechanism 30.
[0026]
The cleaning unit 31 is provided on an elevating stage 42 provided on an elevating shaft 41 that passes through the cylindrical portion 37 and overlaps the central axis of the semiconductor wafer W and is connected to an elevating means such as an air cylinder 43. ing.
[0027]
As shown in FIG. 4, the cleaning unit 31 includes a cleaning member that contacts the semiconductor wafer W, for example, a cleaning brush 51 planted on the brush base 50 in the vertical direction, and the brush base 50 connected to the lifting stage 43. It is comprised with the axial part 52 provided rotatably. Accordingly, the cleaning brush 51 is configured to be rotatable in a free state as indicated by an arrow 53 in the drawing corresponding to the direction of rotation of the semiconductor wafer W.
[0028]
A plurality of cleaning brushes 51 are provided from substantially the center to the peripheral edge of the semiconductor wafer W, and are arranged on the elevating stage 42 in a staggered pattern so as to eliminate uneven cleaning of the semiconductor wafer W. The bristles constituting the cleaning brush 51 are made of a resin such as polyvinyl carbon (PVC), and have a diameter of about 0.2 mm, for example. From the viewpoint of uniform cleaning, the sizes of the plurality of cleaning brushes 51 are different from each other, for example, the diameter of the brush arranged in the outer part is large and the diameter of the brush arranged in the inner part is small. Alternatively, the hardness of the hair constituting the cleaning brush 51 is made different for each brush, for example, the hair of the brush arranged in the inner part is soft, and the hair of the brush arranged in the outer part is hard. It is also possible to do. Furthermore, a plurality of types of hairs having different hardnesses in one brush 51 can be used.
[0029]
A cleaning liquid supply mechanism 55 that uniformly supplies the cleaning liquid to the entire area of the cleaning brush 51 is provided on the rear side of the cleaning unit 31 in the rotation direction 56 of the semiconductor wafer W. The cleaning liquid supply mechanism 55 includes a cleaning liquid, for example, A supply pipe 57 that supplies liquid such as pure water or a solvent, and a supply port 58 that is provided in the supply pipe 57 and supplies the cleaning liquid to the lower surface of the semiconductor wafer W are configured.
[0030]
Further, as shown in FIGS. 2 and 3, a drying gas is disposed on the lifting stage 42 on the side opposite to the cleaning liquid supply mechanism 55 of the cleaning unit 31, that is, on the front side in the rotation direction 56 of the semiconductor wafer W. , For example N₂  A gas supply nozzle 60 for supplying gas or heated clean air is provided.
[0031]
The gas supply nozzle 60 is preferably provided so that gas can be blown from the innermost portion of the cleaning brush 51 in contact with the semiconductor wafer W toward the peripheral edge of the semiconductor wafer W. By doing so, the cleaning liquid adhering to the back surface of the semiconductor wafer W can be scattered outside the semiconductor wafer W, and the semiconductor wafer W can be efficiently dried.
[0032]
Further, the nozzle 60 is connected to an external gas supply pipe 61 through a gas flow path passing through the elevating shaft 41.
As shown in FIGS. 5A, 5B, and 5C, the holding unit 70 of the holding mechanism 30 includes two contact members 72 that contact the peripheral edge of the semiconductor wafer W and the peripheral edge of the lower surface of the semiconductor wafer W. And a stepped portion 73 for supporting. In order to prevent the cleaning liquid from remaining between the part 72 a and the peripheral part of the semiconductor wafer W, the part 72 a that contacts the peripheral part of the semiconductor wafer W of each contact member 72 is preferably in point contact as much as possible. . Furthermore, a gap 72b is formed between the two contact members 72, and the presence of the gap 72b improves cleaning of the cleaning liquid. As shown in (c), the gap 72b extends to the lower side of the semiconductor wafer W, and the cleaning liquid can be discharged from the upper and lower sides of the semiconductor wafer W, so that the liquid sweeping is further improved. This holding part can move back and forth, and has a function of holding and positioning the semiconductor W. Note that three or more contact members 72 may be provided and the number of contact portions may be three or more.
[0033]
The support unit 71 has basically the same configuration as the holding unit 70, but the support unit 71 has a function of holding and positioning the wafer W, whereas the support unit 71 is fixedly provided. It simply supports the wafer W.
[0034]
From the viewpoint of securely holding the semiconductor wafer W, it is sufficient that at least three holding members 70 exist. However, from the viewpoint of preventing misalignment of the transferred semiconductor wafer W and leveling of the semiconductor wafer, at least three holding members 70 are required. It is preferable to provide six support portions 71 as shown, for example, as shown.
[0035]
Next, operation | movement of the washing | cleaning apparatus 20 comprised as mentioned above is described.
First, the semiconductor wafer W is transferred from the main arm 13 shown in FIG. 1 onto the three holding members 70 and the six support members 71 of the holding mechanism 30 shown in FIG. The semiconductor wafer W is held by the three holding members 70 moving forward.
[0036]
After this delivery, the semiconductor wafer W is rotated by driving the motor 40 and rotating the holding mechanism 30. Next, if necessary, jet water washing is performed on the semiconductor wafer W by jetting jet water from a jet water nozzle (not shown). Thereafter, the air cylinder 43 is driven while spraying a cleaning liquid (for example, pure water) from the supply port 58 of the cleaning liquid supply mechanism 55 to the back surface of the semiconductor wafer W to raise the elevating stage 42, and the cleaning brush 51 of the cleaning unit 31 is moved to the semiconductor. The back surface of the wafer W is brought into contact with a predetermined pressure.
[0037]
The plurality of cleaning brushes 51 as the cleaning members are provided so as to be rotatable in a free state with respect to the elevating stage 42, so that they contact the back surface of the semiconductor wafer W in a state where the plurality of cleaning brushes 51 are rotating. Then, they rotate independently according to the rotation of the semiconductor wafer W. Thus, since the brush 51 rotates following the rotation of the semiconductor wafer W, damage due to the cleaning member coming into contact with the semiconductor wafer W can be suppressed. In this rotation, the peripheral edge of the semiconductor wafer W is longer than the cleaning brush 51 located at the center of the semiconductor wafer W because the peripheral part has a longer rotational movement distance due to the difference in peripheral speed between the central part and the peripheral part of the semiconductor wafer W. The rotation speed of the cleaning brush 51 located in the section increases. That is, the rotational speed t of the outermost brush shown in FIG.₁  Is the largest.₂  , T₃  , T₄  And become smaller. That is, the rotational speed is t₁  > T₂  > T₃  > T₄  Have the relationship.
[0038]
On the other hand, N from the nozzle 60₂  The back surface of the semiconductor wafer W is cleaned in a state where the gas is blown from the central portion of the semiconductor wafer W toward the peripheral portion and the cleaning liquid adhering to the back surface of the semiconductor wafer W is scattered outside the semiconductor wafer W.
[0039]
During this cleaning process, N blows out from the nozzle 60 as shown in FIG.₂  The flow F of the cleaning liquid is scattered from the central portion of the semiconductor wafer W toward the peripheral portion by the gas or the rotational centrifugal force of the semiconductor wafer W, but the cleaning liquid flows toward the contact member 72 that holds the semiconductor wafer W. The liquid L1 flowing outside the contact member 72 and the liquid L2 flowing between the contact member 72 and the contact member 72 are scattered outside the semiconductor wafer W. Therefore, the portion 72a of the contact member 72 that comes into contact with the semiconductor wafer W is closer to point contact as much as possible, so that the liquid breakage is improved.
[0040]
Then, after the elapse of a predetermined time, that is, the time at which the cleaning of the semiconductor wafer W is completed, the elevating stage 42 is lowered by driving the air cylinder 43 to separate the back surface of the semiconductor wafer W from the cleaning brush 51. Thereafter, the cleaning liquid blown from the supply port 58 of the cleaning liquid supply mechanism 55 is stopped and N is blown from the nozzle 60.₂  The gas is also stopped.
[0041]
Thereafter, the semiconductor wafer W held by the holding means 30 is rotated for a predetermined time to dry the semiconductor wafer W.
After the drying, the semiconductor wafer W is detached from the holding unit 70 of the holding member 33 by the main arm 13 shown in FIG. 1 and unloaded from the cleaning device 20, and according to a predetermined program, the other wafers 21, 21 shown in FIG. 22, 23, 26, 27 are carried in and predetermined processing is performed.
[0042]
Next, the effect at the time of washing | cleaning using such a washing | cleaning apparatus is demonstrated.
In the cleaning process using the cleaning apparatus 20, the plurality of cleaning brushes 51 are independently rotated by being in contact with the back surface of the rotating semiconductor wafer W as described above. In FIG. 7, when the cleaning is performed in this way, when the cleaning brush 51 is not rotated, and when the semiconductor wafer W is not rotated by the rotation of the semiconductor wafer W, a plurality of cleaning brushes 51 are rotated by a rotating means such as a motor. The result compared with the case where W was wash | cleaned is shown.
[0043]
FIG. 7A shows a resist film on which P.P. S. It is a graph at the time of wash | cleaning by rotating the cleaning brush 51 with a motor at 50 rpm with respect to the semiconductor wafer W to which L was apply | coated. By the way, the curve indicated by a in the figure is P.A. S. The removal rate of L, and the curve b in the figure indicates the diameter of the portion damaged by the resist film cleaning process. The damage caused by the cleaning process of the resist film under these conditions increases as the brush pressure of the cleaning brush 51 against the semiconductor wafer W increases, and the diameter of the damage to the resist film is 10 mm even when the brush pressure is hardly applied. It is confirmed that there is a degree.
[0044]
Next, FIG. 7B shows a semiconductor wafer W as in FIG. 7A with the cleaning brush 51 fixed (unrotatable) to the same semiconductor wafer W as in FIG. 7A. Is a graph when the cleaning brush 51 is brought into contact with the semiconductor wafer W for cleaning. The damage caused by the resist film cleaning process under these conditions increases as the pressure of the cleaning brush 51 against the semiconductor wafer W increases to 10 gf or more. S. It can be seen that the removal rate of L is 100% when the brush pressure is around 10 gf, as in FIG. However, P.I. S. In order to eliminate the damage by setting the removal rate of L to 98% or more and close to 100%, the pressure value of the brush is only in the vicinity of 10 gf and the margin of the brush pressure is narrow.
[0045]
Next, in FIG. 7C, the plurality of cleaning brushes 51 according to the present embodiment are brought into contact with the back surface of the semiconductor wafer W so that the plurality of cleaning brushes 51 are independent from each other based on the rotation of the semiconductor wafer W. 5 is a graph when the semiconductor wafer W is rotated and cleaned. In the resist film cleaning process under these conditions, no damage occurs even when the brush pressure of the cleaning brush 51 on the semiconductor wafer W reaches 150 gf. P.P. S. It can be seen that the removal rate of L is 100% when the brush pressure is around 20 gf.
[0046]
Therefore, the plurality of cleaning brushes 51 rotate independently based on the rotation of the semiconductor wafer W by contacting the plurality of cleaning brushes 51 with the back surface of the semiconductor wafer W as in this embodiment, and the semiconductor wafer W is cleaned. By doing so, it is possible to suppress the occurrence of damage to the underlying film of the semiconductor wafer W such as a resist film or the semiconductor wafer W itself in the cleaning process. Since the occurrence of damage is suppressed in this way, the yield in the cleaning process of the semiconductor wafer W is improved.
[0047]
The brush pressure may be set within the range of the pressure of the brush from about 20 gf to the pressure at which the semiconductor wafer W does not separate from the holding mechanism 30, and the brush pressure margin can be widened. Thereby, the setting of a brush pressure becomes easy and the efficiency of the operation | work concerning a maintenance etc. can be improved.
[0048]
Further, each holding part 70 that holds the peripheral edge of the semiconductor wafer W contacts the semiconductor wafer W at at least two contact parts 72a, and the contact part 72a is substantially in point contact with the peripheral part of the semiconductor wafer W. Since they are in contact with each other, it is possible to suppress the cleaning liquid from remaining between the contact portion 72a and the peripheral edge of the semiconductor wafer W, and to further improve the throughput related to the drying process of the semiconductor wafer W.
[0049]
Furthermore, since the cleaning liquid is supplied over almost the entire area of the cleaning brush 51 from the supply port 58 of the cleaning liquid supply mechanism 55 on the rear side of the cleaning brush 51 in the rotation direction of the semiconductor wafer W, the cleaning brush 51 is connected to the drying region of the semiconductor wafer W. It is possible to suppress contact. For this reason, damage to the semiconductor wafer W by the cleaning brush 51 can be reduced, and cleaning efficiency can be improved.
[0050]
Furthermore, since the drying gas is blown from the nozzle 60 to the front side of the cleaning brush 51 in the rotation direction of the semiconductor wafer W, the cleaning liquid adhering to or adhering to the semiconductor wafer W during or after the cleaning is, for example, N₂  Since it can be almost dried by blowing off with gas, it is possible to shorten the time for subsequent swing-off drying, and the throughput is improved.
[0051]
Next, another example of the holding member for the semiconductor wafer W will be described with reference to FIG. The holding portion 70 ′ shown in this figure includes two contact members 72 ′ that contact the peripheral edge of the semiconductor wafer W, and a step 73 ′ for supporting the peripheral edge of the lower surface of the semiconductor wafer W, This point is the same as the holding unit 70 except that the contact member 72 is provided with a protruding pressing unit 74 that presses the upper surface side of the semiconductor wafer W. And when this holding | maintenance part 70 is moved toward the center direction from the position A shown with a dashed-two dotted line in the figure to the position B shown with a continuous line, contact member 72 'contacts the peripheral part of the semiconductor wafer W, Since it is held between the semiconductor wafer pressing portion 74 and the stepped portion 73, even if the brush pressure of the cleaning brush 51 in contact with the back surface of the semiconductor wafer W is increased, the semiconductor wafer W does not come off the contact member 72 'and is safe. A cleaning process can be performed.
[0052]
Next, another example of the cleaning brush and the cleaning liquid supply mechanism will be described with reference to FIG. The cleaning liquid supply means 55 ′ includes a shaft 52 of the cleaning member and a supply pipe 75 for supplying a cleaning liquid such as pure water or a solvent built in the brush base 50, and protrudes above the brush base to remove the cleaning liquid from the cleaning brush. The supply port 76 is supplied from the gap 51 in the direction of the semiconductor wafer W. With this configuration, it is possible to reliably supply the cleaning liquid to the cleaning brush 51 and improve the reliability of the processing. Further, since the cleaning brush 51 and the cleaning liquid supply means 55 are integrally formed, the space of the apparatus can be saved.
[0053]
Next, another example of the cleaning unit will be described with reference to FIG. In the cleaning unit 31 ′ of this example, instead of providing a plurality of cleaning brushes 51, a cleaning unit 62 that includes one cleaning brush 51 and is movable in the radial direction of the semiconductor wafer W held by the holding mechanism 30 is provided. I have.
[0054]
In addition to the cleaning brush 51, the cleaning unit 62 includes a cleaning liquid nozzle 63 and a drying gas such as N₂  A gas supply nozzle 64 for supplying gas or heated clean air is provided, and these are moved integrally. The gas ejected from the gas supply nozzle 64 is supplied from the gas supply pipe 61a through the gas flow path passing through the elevating shaft 41. The cleaning unit 62 is moved at the gas pressure by supplying gas into the elevating stage 42. In this case, the moving gas is supplied from the gas supply pipe 61b through the gas flow path passing through the elevating shaft 41.
[0055]
In the example shown in this figure, a jet water nozzle 65 is provided at the center of the elevating stage 42. The angle of the jet water nozzle 65 can be adjusted, and jet water can be supplied to any position from the central part to the peripheral part of the semiconductor wafer W.
[0056]
When the semiconductor wafer W is cleaned by the cleaning unit 31 ′ configured as described above, the semiconductor wafer W is transferred to the holding mechanism 30, and then the motor 40 is driven to rotate the holding mechanism 30, whereby the semiconductor wafer W is rotated. After rotating W, if necessary, jet water is jetted from the jet water nozzle 65 to the semiconductor wafer W to perform jet water washing. Thereafter, the air cylinder 43 is driven while a cleaning liquid (for example, pure water) is sprayed from the cleaning liquid nozzle 63 of the cleaning unit 62 on the back surface of the semiconductor wafer W to raise the elevating stage 42, and is provided in the cleaning unit 62 of the cleaning unit 31 ′. The cleaning brush 51 thus made is brought into contact with the vicinity of the center of the back surface of the semiconductor wafer W with a predetermined pressure. Then, the cleaning unit 62 is moved toward the peripheral edge of the semiconductor wafer W by the gas from the gas supply pipe 61 b while cleaning with the brush 51. Further, N is supplied from the gas supply nozzle 64.₂  Gas is blown from the central portion of the semiconductor wafer W toward the peripheral portion, and the cleaning liquid adhering to the back surface of the semiconductor wafer W is scattered out of the semiconductor wafer W, and drying is promoted.
[0057]
In this way, the entire back surface of the semiconductor wafer W is cleaned. In this case, since the cleaning is performed while moving the cleaning brush 51, it is not necessary to use a plurality of cleaning brushes. Further, since the cleaning liquid nozzle is provided in the cleaning unit 62, the cleaning liquid can be reliably supplied to the portion where the semiconductor wafer is cleaned.
[0058]
Next, another example of the cleaning unit will be described with reference to FIG. The cleaning unit 31 ″ in this example has a plurality of cleaning brushes 51 as in the cleaning unit 31 shown in FIGS. 2 and 3, and motors 66 (for example, step motors) that can excite each cleaning brush 51, respectively. Are connected, and each cleaning brush 51 can be driven to rotate by a motor 66. These motors 66 can be switched between a state in which the brush 51 is rotationally driven, a free state, and a fixed state that does not substantially rotate. These excitable motors 66 are controlled by a controller 67, and any one of the above states can be selected. According to the cleaning unit 31 '' configured in this way, the plurality of cleaning brushes 51 can be individually set to any of a rotationally driven state, a free state, and a substantially non-rotating state, A desired cleaning mode can be selected in accordance with the semiconductor wafer W or its portion or the type of film formed on the wafer W.
[0059]
Further, only one motor may be provided and each cleaning brush may be rotated using a belt mechanism.
Such a stepping motor can also be applied to the cleaning unit 62 shown in FIG. 10, and the cleaning mode by the cleaning brush 51 is selected from a rotationally driven state, a free state, and a substantially non-rotating state. can do.
[0060]
Next, an embodiment in which the present invention is applied to a surface cleaning apparatus 21 for cleaning a circuit forming surface of a semiconductor wafer will be described with reference to FIGS.
The surface cleaning apparatus 21 supplies an apparatus main body 81, a spin chuck 82 that sucks and holds the semiconductor wafer W in a rotatable manner, a cleaning unit 83 that cleans the surface of the semiconductor wafer that is a circuit forming surface, and ultrasonic vibration water. And a cleaning nozzle 85 for supplying a cleaning liquid (for example, pure water) to the surface of the semiconductor wafer W. A cup 86 is provided around the spin chuck 82 to prevent the cleaning liquid and the like from scattering around.
[0061]
On the spin chuck 82, the semiconductor wafer W is horizontally held by suction with the surface, which is a circuit formation surface, facing up. The spin chuck 82 is rotated by a motor 87 via a rotating shaft 88.
[0062]
The cleaning unit 83 is disposed on the side of the spin chuck 82 in the base of the apparatus main body 81, and includes an arm 91, a cleaning brush 92 as a cleaning member supported on the tip of the arm 91, and a base of the arm 91. A support portion 95 that supports the end portion, and a drive device 96 that is built in the support portion 95 and rotates and moves up and down the arm 91 are provided.
[0063]
The brush 92 is rotatably supported by the arm 91 via the shaft 94 in a state where the brush 92 is implanted on the brush base 93. Therefore, the cleaning brush 92 can be rotated in a free state. This cleaning brush 92 is made of a resin such as polyvinyl carbon (PVC), for example, like the brush 51 described above, and has a diameter of, for example, about 0.2 mm. A cleaning liquid supply port (not shown) is provided on the lower surface of the brush base 93, and the cleaning liquid can be supplied to a contact portion between the brush 92 and the semiconductor wafer W through the supply port.
[0064]
The arm 91 is rotated between the standby position indicated by the two-dot chain line in FIG. 13 and the cleaning position on the semiconductor wafer W via the shaft 97 by the driving device 96. In the standby position, the cleaning brush 92 is held by the cleaning brush cleaning device 98, and the cleaning brush 92 is cleaned therein. When the cleaning brush 92 is rotated, it is lifted from the cleaning brush cleaning device 98 by the driving device 96 and lowered on the semiconductor wafer W, thereby coming into contact with the surface of the semiconductor wafer W as shown in FIG.
[0065]
The ultrasonic water supply mechanism 24 is provided on the base of the apparatus main body 81 on the opposite side of the cleaning unit 83 with the spin chuck 82 interposed therebetween. The ultrasonic water nozzle supported by the arm 101 and the tip of the arm 101 is provided. (Megasonic nozzle) 102, a support portion 105 that supports the base end portion of the arm 91, and a drive device (not shown) that is built in the support portion 105 and rotates and moves the arm 101 up and down. Yes. The ultrasonic water nozzle 102 includes an ultrasonic oscillator (not shown), and the cleaning liquid ejected from the nozzle is excited at a predetermined frequency by the ultrasonic oscillator.
[0066]
The arm 101 is rotated between a standby position separated from the spin chuck 82 and a supply position above the semiconductor wafer W by a driving device. Further, it is held by the nozzle cleaning device 108 at the standby position, and the nozzle 102 is cleaned therein. The ultrasonic water nozzle 102 is raised from the nozzle cleaning device 108 by the driving device when rotating, and is adjusted to a predetermined height at which the cleaning liquid is supplied above the semiconductor wafer W.
[0067]
The cleaning nozzle 85 is provided outside the spin chuck 82 and supplies cleaning liquid (for example, pure water) to the surface of the semiconductor wafer W held and rotated by the spin chuck 82. The discharge direction of the cleaning nozzle 85 can be switched.
[0068]
Next, operation | movement of the washing | cleaning apparatus 21 comprised as mentioned above is described.
First, the semiconductor wafer W is delivered from the main arm 13 shown in FIG. 1 onto the spin chuck in the cleaning device 21 and is sucked and held. After the semiconductor wafer W is held in this manner, the cleaning brush 92 is lifted from the cleaning brush cleaning device 98 by the driving device 96 of the cleaning unit 83 and positioned above the vicinity of the center of the semiconductor wafer W. On the other hand, the cleaning liquid is supplied from the nozzle 85 to the semiconductor wafer W on the spin chuck 82 in the meantime, and then the spin chuck 82 is rotated by the motor 87. In this state, the driving brush 96 lowers the cleaning brush 92 to bring the tip of the cleaning brush 92 into contact with the semiconductor wafer W and start cleaning the surface of the semiconductor wafer W. In this cleaning, the driving brush 96 rotates the cleaning brush 92 from the vicinity of the center of the semiconductor wafer W toward the periphery.
[0069]
In this case, since the cleaning brush 92 as a cleaning member is rotatably provided with respect to the arm 91, the brush 92 is brought into contact with the rotating semiconductor wafer W by contacting the brush 92. 92 rotates according to the rotation of the semiconductor wafer W. Thus, since the brush 92 rotates following the rotation of the semiconductor wafer W, damage due to the cleaning member coming into contact with the semiconductor wafer W can be suppressed.
[0070]
After the cleaning by the cleaning brush 92, the arm 91 is rotated to the standby position, and the brush 92 is lowered and accommodated in the cleaning brush cleaning device 98 at that position.
Thereafter, the arm 101 of the ultrasonic water supply mechanism 84 rotates to the upper position of the semiconductor wafer W, ultrasonic water is supplied from the nozzle 102 to the wafer W, and ultrasonic cleaning is performed. After the ultrasonic water cleaning, the rear arm 101 returns to the standby position, and the ultrasonic water cleaning ends. Thereafter, these washings are repeated as necessary.
[0071]
When the cleaning process is completed, the semiconductor wafer on the spin chuck 82 is transferred to another apparatus by the main arm 13.
In this surface cleaning apparatus 21, as shown in FIG. 14, the cleaning brush 92 can be driven to rotate by the stepping motor 99, and the cleaning mode of the cleaning brush is driven to rotate. It is possible to select from a free state or a substantially non-rotating state.
[0072]
The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. For example, in the above embodiment, a brush planted with hair is used as the cleaning member, but other cleaning members such as a sponge may be used. In addition, a brush and a sponge planted can be used in combination. Furthermore, the shape of the cleaning member is not limited to a cylindrical shape.
[0073]
In the above embodiment, the back surface cleaning device and the front surface cleaning device are described separately. However, if the cleaning portion is formed on both surfaces of the substrate, it is possible to perform the cleaning processing not only on one surface but also on the front and back surfaces at the same time. Needless to say, it will improve. An example is shown in FIG. The cleaning device in this figure has both the cleaning unit 31 of the back surface cleaning device 20 shown in FIG. 2 and the cleaning unit 83 of the front surface cleaning device 21 shown in FIG. it can. Needless to say, the front and back surfaces may be exchanged by rotating the substrate in the cleaning apparatus, and the respective surfaces may be processed.
Further, in the above embodiment, a semiconductor wafer is used as the substrate. However, the present invention is not limited to this, and a printed substrate, a glass max, an LCD substrate, or the like may be used.
[0074]
【The invention's effect】
As described above, according to the present invention, the cleaning member that is in contact with the substrate rotates based on the rotation of the substrate and thereby the substrate is cleaned, so that damage due to contact between the contact portion and the substrate is caused. In addition to being suppressed, unnecessary substances adhering to the substrate can be surely removed, so that the yield of the substrate can be improved.
[Brief description of the drawings]
FIG. 1 is a perspective view showing the overall configuration of a coating / developing apparatus including a cleaning apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view showing a cleaning device according to an embodiment of the present invention used in the coating / developing device of FIG.
3 is a schematic plan view showing a cleaning apparatus according to an embodiment of the present invention used in the coating / developing apparatus of FIG. 1. FIG.
FIG. 4 is a perspective view showing a main part of a cleaning unit used in a cleaning apparatus according to an embodiment of the present invention.
5A is a perspective view, FIG. 5B is a plan view, and FIG. 5C is a front view of the holding portion of the holding member in the cleaning apparatus of FIG. 2;
FIG. 6 is a plan view for explaining the cleaning operation of the cleaning unit in the cleaning apparatus according to the embodiment of the present invention.
FIG. 7 is a view for explaining damage of a substrate due to a cleaning process.
8 is a view showing another example of the holding unit shown in FIG.
FIG. 9 is a cross-sectional view showing another example of the cleaning brush used in the cleaning unit.
FIG. 10 is a schematic sectional view showing a cleaning apparatus according to another embodiment of the present invention.
FIG. 11 is a schematic side view showing a main part of another example of the cleaning unit.
FIG. 12 is a schematic cross-sectional view showing a cleaning apparatus according to still another embodiment of the present invention.
13 is a schematic plan view showing the cleaning apparatus shown in FIG.
14 is a view for explaining a modification of the cleaning unit in the cleaning apparatus of FIG.
15 is a cross-sectional view showing a cleaning apparatus that combines the cleaning section shown in FIG. 2 and the cleaning section shown in FIG. 12;
[Explanation of symbols]
30 …… Holding mechanism
31 …… Cleaning section
51 …… Cleaning brush (cleaning material)
55 …… Cleaning liquid supply mechanism
60 …… Gas supply nozzle
70 …… Holding part
71 …… Supporting part
72 …… Contact member

Claims (11)

In a cleaning device for cleaning a substrate,
Holding means for holding the substrate;
Rotating means for rotating the substrate held by the holding means;
A cleaning unit provided on at least one side of the substrate held by the holding means,
The cleaning unit has a plurality of cleaning members provided so as to be able to contact the substrate , and the plurality of cleaning members are arranged from the central part to the peripheral part of the substrate and in contact with the substrate, A cleaning apparatus that rotates based on rotation of a substrate rotated by a rotating means. In a cleaning device for cleaning a substrate,
Holding means for holding the substrate;
Rotating means for rotating the substrate held by the holding means;
A cleaning member that is provided so as to be in contact with the substrate and is rotated in accordance with the rotation of the substrate rotated by the rotating means in a state of being in contact with the substrate, the substrate being held by the holding means A cleaning section provided on at least one side;
Cleaning liquid supply means for supplying a cleaning liquid to the rear side of the cleaning member in the rotation direction of the substrate ;
A cleaning apparatus comprising: a gas supply unit configured to supply a gas to a front side of the cleaning member in the rotation direction of the substrate . The cleaning apparatus according to claim 2, wherein the gas supply unit supplies a gas toward the outside of the substrate. In a cleaning device for cleaning a substrate,
Holding means for holding the substrate;
Rotating means for rotating the substrate held by the holding means;
A cleaning member that is provided so as to be capable of contacting the substrate and that rotates in accordance with the rotation of the substrate rotated by the rotating means in a state of being in contact with the substrate; and at least of the substrate held by the holding means A cleaning section provided on one side;
Cleaning liquid supply means for supplying a cleaning liquid to the substrate;
Gas supply means for supplying gas toward the outside of the substrate ;
A cleaning apparatus comprising: In a cleaning device for cleaning a substrate,
Holding means for holding the substrate;
Rotating means for rotating the substrate held by the holding means;
A plurality of cleaning members are arranged from the central part to the peripheral part of the substrate so as to be in contact with the substrate, and rotate based on the rotation of the substrate rotated by the rotating means while being in contact with the substrate. A cleaning unit provided on at least one surface side of the substrate held by the holding means;
Cleaning liquid supply means for supplying a cleaning liquid to the substrate;
Gas supply means for supplying a gas to the substrate;
A cleaning apparatus comprising: In a cleaning apparatus for cleaning a substrate, holding means for holding the substrate;
Rotating means for rotating the substrate held by the holding means;
A cleaning unit provided on at least one side of the substrate held by the holding means,
The cleaning unit includes at least one cleaning member provided so as to be able to contact the substrate, a driving unit that rotationally drives the cleaning member, a state in which the cleaning member is rotationally driven, a free state, and substantially And a control means for controlling to any one of the fixed states. In a cleaning device for cleaning a substrate,
Holding means for holding the substrate;
Rotating means for rotating the substrate held by the holding means;
At least one cleaning member provided in contact with the substrate, drive means for rotationally driving the cleaning member, a state in which the cleaning member is rotationally driven, a free state, and substantially fixed A cleaning unit having control means for controlling any of the states,
Cleaning liquid supply means for supplying a cleaning liquid to the rear side of the cleaning member in the rotation direction of the substrate;
A cleaning apparatus comprising: a gas supply unit configured to supply a gas to a front side of the cleaning member in the rotation direction of the substrate. The cleaning device according to claim 6, wherein the driving unit includes an excitable motor. The cleaning apparatus according to claim 6, wherein the gas supply unit supplies a gas toward an outer direction of the substrate. Holding the substrate;
Supplying a cleaning liquid to the rear side of the cleaning member in the rotation direction of the substrate ;
Rotating the held substrate;
Cleaning the substrate by bringing a cleaning member into contact with the at least one surface side of the substrate and rotating the cleaning member based on rotation of the substrate;
Supplying a drying gas toward the front side of the cleaning member in the rotation direction of the substrate . Holding the substrate;
Supplying a cleaning liquid to at least one side of the substrate;
Rotating the held substrate;
Cleaning the substrate by bringing a cleaning member into contact with the at least one surface side of the substrate and rotating the cleaning member based on rotation of the substrate;
And a step of supplying a drying gas toward the outside of the substrate .

Images