KR20220120481A - Substrate cleaning method and substrate cleaning apparatus - Google Patents

Abstract

The present invention is to quickly complete cleaning processing performed by relatively sliding a brush with respect to a lower surface of a plate. The present invention may include a process of holding the lower surface of the substrate having a film formed thereon by means of a substrate holding unit, and a cleaning process of pressing a first brush and a second brush on the lower surface of the substrate, and cleaning by sliding the lower surface of the substrate in the same sliding direction relative to each other.

Description

SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING APPARATUS

The present disclosure relates to a substrate cleaning method and a substrate cleaning apparatus.

In the manufacturing process of a semiconductor device, various processes are performed with respect to the semiconductor wafer (henceforth "wafer") which is a board|substrate. As one of these processes, there is a process for cleaning by sliding a brush against the back surface of the wafer. Patent Document 1 discloses an apparatus for performing such a cleaning process.

Japanese Patent Laid-Open Publication No. 2008-177541

The present disclosure provides a technique capable of quickly completing a cleaning process performed by sliding a brush relative to the lower surface of a substrate.

A substrate cleaning method of the present disclosure includes a step of holding a lower surface of a substrate having a film formed thereon by a substrate holding unit;

and a cleaning step of pressing the first brush and the second brush against the lower surface of the substrate and sliding the first brush and the second brush in the same sliding direction relative to the lower surface of the substrate for cleaning.

According to the present disclosure, the cleaning process performed by sliding the brush relative to the lower surface of the substrate can be completed quickly.

BRIEF DESCRIPTION OF THE DRAWINGS It is a top view of the washing|cleaning apparatus which performs the process of 1st Embodiment of this indication.
2 is a longitudinal side view of the cleaning apparatus.
Fig. 3 is a plan view showing the processing in the washing apparatus.
Fig. 4 is a plan view showing the processing in the washing apparatus.
Fig. 5 is a plan view showing the processing in the washing apparatus.
Fig. 6 is a side view of the cleaning apparatus for performing the processing according to the second embodiment.
Fig. 7 is a plan view showing a process in the washing apparatus.
Fig. 8 is a plan view showing the processing in the washing apparatus.
Fig. 9 is a plan view showing the processing in the washing apparatus.
10 is a schematic diagram of a brush of the cleaning device.
11 is a plan view of a cleaning apparatus that performs a process according to the third embodiment.
12 is a plan view of a cleaning apparatus that performs processing of a modification of the third embodiment.
13 is a plan view of a cleaning apparatus that performs processing of a modification of the third embodiment.
Fig. 14 is a plan view of a cleaning apparatus that performs a process according to the fourth embodiment.
15 is a plan view of a cleaning apparatus that performs processing of a modification of the fourth embodiment.
Fig. 16 is a side view of a cleaning apparatus that performs processing according to the fifth embodiment.
17 is a perspective view of a brush provided in the cleaning device.

[First embodiment]

A cleaning apparatus 1 embodying a first embodiment of a substrate cleaning method of the present disclosure will be described with reference to a plan view of FIG. 1 and a longitudinal sectional side view of FIG. 2 . In the cleaning apparatus 1 as one embodiment of the substrate cleaning apparatus, two brushes are simultaneously pressed against the back surface (lower surface) of the wafer W, which is a circular substrate on which a resist film is formed on the surface (upper surface), and slides relatively. washing is performed by Accordingly, different positions of the lower surface of the wafer W are simultaneously processed. In addition, the wafer W whose back surface has been cleaned in this way is transferred to an exposure machine, and the resist film is exposed along a predetermined pattern. In this exposure process, if a foreign material adheres to the back surface of the wafer W, the wafer W is arranged to float from the stage of the exposure machine, so that the distance between the optical system of the exposure machine and the wafer W deviates from the design value. It becomes a focus, but by being processed in the cleaning apparatus 1, it is prevented.

The cleaning device 1 includes a base body 11 , a spin chuck 12 , a cup 3 , and a cleaning processing unit 4 . The base body 11 is formed in a rectangular shape in a plan view, and is moved from one end side in the longitudinal direction of the base body 11 by a transport mechanism (not shown) provided outside the washing apparatus 1 . The wafer W is conveyed to the cleaning apparatus 1 . This one end side is demonstrated as a front side. In addition, the left and right in the following description are the left and right when seen toward the front from the rear. The base body 11 is provided with concave portions 13 each having a longitudinal direction in the front-rear direction, and the concave portion 13 is configured as a processing region for the wafer W. As shown in FIG. In addition, in this front-back direction, the center of the spin chuck 12 (= the center of the held wafer W), which will be described later, and the turning axis (central axis R1) for turning the brush for cleaning the wafer W are arranged. is the direction to be

A spin chuck 12 is provided on the front side of the processing region in the concave portion 13 . The spin chuck 12 is a circular stage that sucks the central portion of the lower surface of the wafer W and holds the wafer W horizontally. The lower side of the spin chuck 12 is connected to a rotation mechanism 15 via a shaft 14, and the rotation mechanism 15 is configured such that the wafer W held by the spin chuck 12 is rotated around a vertical axis, specifically For example, the spin chuck 12 is rotated in the circumferential direction so as to rotate in a clockwise direction in a planar view (a top view). On the side of the spin chuck 12 , three vertical support pins 16 (only two are shown in FIG. 2 ) are arranged at intervals along the rotation direction of the spin chuck 12 . The support pin 16 is raised and lowered by the lifting mechanism 17 , and the wafer W can be transferred between the transfer mechanism, the spin chuck 12 , and a non-rotating chuck 35 , which will be described later.

A cylindrical portion extending upward from the bottom of the base body 11 is provided so as to surround the spin chuck 12, the rotation mechanism 15, the support pin 16, and the lifting mechanism 17, an air knife ( 18) is configured as The upper end surface of the air knife 18 constitutes an inclined surface inclined inward. On the inclined surface, discharge ports 19 for discharging air, for example, upward are provided at intervals in the circumferential direction. When the back surface of the wafer W is adsorbed and held by the spin chuck 12 , the upper end of the air knife 18 is close to the back surface of the wafer W, and air is discharged from the discharge port 19 , thereby It prevents the cleaning solution from adhering to the center of the back surface.

A drain port 22 is provided at the bottom of the concave portion 13 of the base body 11 . In addition, an upright exhaust pipe 23 for exhausting the inside of the recess 13 is provided at a position on the side of the air knife 18 rather than the drain port 22 , and the exhaust pipe 23 is discharged from the exhaust pipe 23 during processing of the wafer W. of the exhaust is carried out. A flange 24 extending outward from the lower portion of the air knife 18 above the exhaust pipe 23 is provided, so that the waste liquid is prevented from flowing into the exhaust pipe 23, the outer end of the flange 24 is the exhaust pipe (23) is bent downward from the outer side.

The cup 3 surrounds the air knife 18 and is configured as a cylindrical body whose upper end protrudes inward. The periphery of the wafer W being processed is surrounded by the cup 3, and the scattering of the waste liquid is prevented. In addition, when the wafer W is held by the spin chuck 12 or a non-rotating chuck 35 to be described later, the wafer W is held concentric with the cup 3 . From the left and right outer walls of the cup 3 , the support portions 31 respectively extend toward the outer edge of the concave portion 13 and are connected to a horizontal movement mechanism 32 provided in the base body 11 , The cup 3 is movable back and forth in the recess 13 by the horizontal movement mechanism 32 . Let the front side and the rear side of the movement area|region of this cup 3 be a front position and a rear position, respectively. 1 shows the cup 3 in the forward position, and the center of the cup 3 in the forward position coincides with the center of the spin chuck 12 in plan view. The center of the cup 3 in a rear position is located behind the air knife 18. As shown in FIG.

The horizontal movement mechanism 32 is connected to the raising/lowering mechanism 33, and can raise/lower with respect to the base body 11 together with the cup 3. Due to this lifting mechanism 33 , the cup 3 has an upper surface of the non-rotating chuck 35 (a support surface of the wafer W) higher than an upper surface of the spin chuck 12 (a support surface of the wafer W). It is possible to move up and down between an upper position and a lower position in which the upper surface of the non-rotating chuck 35 is lower than the upper surface of the spin chuck 12 .

In the cup 3, two bridge parts 34 extending back and forth with the air knife 18 sandwiched therebetween are formed, and a non-rotating chuck 35 is provided in each bridge part 34. is provided. By the non-rotating chuck 35 , the area outside the center of the back surface of the wafer W is sucked, and the wafer W is held horizontally. Each of the non-rotating chuck 35 and the spin chuck constitutes a substrate holding part, and is applied to the non-rotating chuck 35 when processing the center of the back surface of the wafer W, and spin when processing the periphery of the back surface of the wafer W. Each wafer W is held by the chuck 12, and is processed by a brush.

A nozzle 36 is provided in the vicinity of the spin chuck 12 in the region surrounded by the cup 3, and discharges, for example, pure water as a cleaning liquid, inclined upward and backward. By discharging the cleaning liquid in such a direction, when the wafer W is held by the non-rotating chuck 35 at the rear position, at the center of the lower surface of the wafer W, the wafer W is held on the spin chuck 12 at the front position. ), the cleaning liquid is supplied to the peripheral portion of the lower surface of the wafer W, respectively, and the brush 51 to be described later slides in the region supplied with the cleaning liquid in this way.

Next, the washing|cleaning process part 4 is demonstrated. The cleaning processing unit 4 and the spin chuck 12 form a sliding mechanism for cleaning by sliding the brush with respect to the wafer W. The washing processing unit 4 is provided with a horizontal circular stage 41 provided in the recessed portion 13 . The stage 41 is provided with the stage main body 42 provided with the raising/lowering mechanism, and rotation mechanisms 43 and 44. As shown in FIG. The parts adjacent to each other in the circumferential direction in the upper part of the stage 41 are each configured as rotation mechanisms 43 and 44, and these rotation mechanisms 43 and 44 are respectively formed in a fan shape in plan view, have. And, by the stage main body 42, the rotating mechanisms 43 and 44 can be raised and lowered independently of each other.

The stage 41 is configured to be rotatable around its central axis R1. Thus, the stage 41 rotates about a longitudinal axis, specifically a vertical axis. This central axis R1 is located in the vicinity of the periphery of the cup 3 in a front position in the back of the air knife 18. As shown in FIG. In addition, the direction in which the center axis R1 and the center of the spin chuck 12 are arranged coincides with the moving direction of the cup 3 before and after.

In addition, since the stage 41 rotates as described above, the positions of the rotation mechanisms 43 and 44 are displaced. The rotation mechanism of is shown as 44. Above these rotating mechanisms 43 and 44, respectively, a horizontal circular brush 51 is provided. These two brushes 51 are configured identically to each other, and are made of, for example, a member having elasticity such as a sponge or resin, and the upper surface of the brush 51 is pressed against the lower surface of the wafer W to form a sliding surface that slides. . The lower side of each brush 51 is respectively connected to the rotation mechanisms 43 and 44 via the shaft 52, and each brush 51 is connected to the rotation mechanisms 43 and 44 by the rotation mechanisms 43 and 44 of the brush 51. rotates around the central axis. The central axis of the brush 51 extends in the longitudinal direction, more specifically in the vertical direction. In this way, when the washing|cleaning process part 4 is comprised, each brush 51 pivotally moves the central axis R1 of the stage 41 as a turning axis. That is, it is movable so that it may revolve around the said central axis R1 as an orbital axis. Moreover, the brush 51 is comprised rotatably so that it may rotate by the rotation mechanisms 43 and 44. As shown in FIG. In this embodiment, rotation of brush 51A, 51B is performed counterclockwise in planar view.

In the first embodiment, the two brushes 51 are a first brush and a second brush. When the arrangement of the brush 51 is further described, the two brushes 51 are arranged along the circumferential direction of the stage 41 close to each other in a plan view, and the center of each brush 51 is a central axis ( They are respectively arranged on the periphery of the stage 41 so as to be located equidistant from R1). Moreover, with respect to the brush 51, the brush connected to the rotation mechanism 43 may be distinguished from each other as 51A, and the brush connected to the rotation mechanism 44 may be distinguished from each other as 51B.

However, as described above, the cup 3 moves between the front position and the rear position, and the waiting portion 25 is located at the rear of the cup 3 in the front position, and on the left side of the center of the left and right sides of the cup 3 . is provided. Moreover, in order not to interfere with the cup 3 which moves in this way, the waiting|standby part 25 is provided below the lower end of a cup. The waiting section 25 is provided with two concave sections that are opened on the lower side to receive the two brushes 51, respectively, and are arranged back and forth, and the concave section is a waiting area for waiting the brushes 51A and 51B. (26). Therefore, the standby|standby part 25 is comprised as a covering part which coat|covers the brush 51 from above, and supplies a washing|cleaning liquid to the brushes 51A, 51B waiting in the standby|standby area|region 26, and wash|cleans.

As described above, the brush 51 has a structure capable of revolving (turning around the central axis R1 of the stage 41) and raising/lowering. Due to this revolution and elevation, the brush 51 moves between the position where cleaning is performed by being pressed against the lower surface of the wafer W and the standby region 26 . In addition, with respect to the brush 51 and the brush 53 to be described later, when positioned on the lower surface side of the wafer W, the non-processing position is pressed against the wafer W at a height at which processing is not performed away from the wafer W. The height at which processing is performed may be described as a processing position.

The standby unit 25 will be further described. The left end L1 of the waiting area 26 (that is, the left end of the brush 51 in the waiting state in the waiting unit 25) is toward the center of the cup 12 with respect to the left end L2 of the cup 3 . Located. That is, the left end of the waiting area 26 does not protrude to the left with respect to the left end of the cup 3 . Moreover, since the waiting|standby part 25 is provided in the left side rather than the center of the left and right of the cup 3, also with respect to the right end of the waiting|standby area|region 26, it does not protrude right with respect to the right end of the cup. By such a layout, the enlargement of the width|variety of the right and left of the washing|cleaning apparatus 1 is suppressed. Moreover, even if the left end L1 of the waiting area|region 26 and the left end L2 of the cup 12 correspond, the enlargement of the right and left of the apparatus by installation of the waiting|standby part 25 can be suppressed, for example.

The cleaning apparatus 1 is provided with a control unit 10 constituted by a computer, and the control unit 10 is provided with a program. This program has a set of steps so that a control signal can be output to each unit of the cleaning device 1 to control the operation of each unit in order to perform a series of processing operations to be described later on the wafer W. . Specifically, rotation of the spin chuck 12 by the rotation mechanism 15 , movement of the cup 3 by the horizontal movement mechanism 32 , lifting and lowering of the support pin 16 by the lifting mechanism 17 , and cleaning processing unit The operation of each part constituting (4), the discharge of air from the air knife 18, the discharge of the cleaning liquid from the nozzle 36, and the like are controlled. The operation of each unit of the cleaning processing unit 4 described above is, for example, rotation, revolution, and elevation of the brush 51 , specifically, for example. The above program is stored in the control unit 10 in a state of being stored in a storage medium such as a hard disk, a compact disk, a DVD, or a memory card, for example.

Next, the processing of the wafer W by the washing|cleaning apparatus 1 is demonstrated with reference to FIG. 3 which is a top view. In addition, in each plan view for explaining the processing of the apparatus in this FIG. 3 and later, among the spin chuck 12, the non-rotating chuck 35, and the brush, those in contact with the back surface of the wafer W are indicated by solid lines, and the wafer Those separated from the back side of (W) are indicated by a dotted line or omitted. In addition, in order to facilitate understanding of the positional relationship of each part, an imaginary line L3 extending left and right through the center of the spin chuck 12 , and a imaginary line extending left and right through the central axis R1 of the stage 41 . A line L4 and an imaginary line L5 extending back and forth through the center of the spin chuck 12 and the central axis R1 are indicated by dashed-dotted lines, respectively.

In a state in which the cup 3 is positioned in the forward position and the downward position, and each brush 51 is positioned in the standby region 26, the wafer W having a resist film formed on its surface is cleaned by the transfer mechanism as described above. It is conveyed to the apparatus 1, and the support pin 16 raises and supports the wafer W. Then, after the cup 3 is moved to the upper position, the support pin 16 is lowered, and the wafer W is transferred to the non-rotating chuck 35 and held by suction. On the other hand, the brush 51 descends from the waiting area 26, orbits, exits the lower end of the cup 3, and moves downward of the wafer W, and the brushes 51A and 51B move along the imaginary line ( L5) is located on the right and left, respectively (FIG. 3 (a)).

Then, when the cup 3 moves to the rear position, the cleaning liquid is discharged from the nozzle 36 and supplied to the center of the wafer W. Then, the brush 51 rotates (rotates), rises from each non-processing position to the processing position, is pressed against the center of the lower surface of the wafer W, and rotates in a clockwise direction by rotation of the stage 41, counterclockwise As the clockwise revolution is alternately repeated, it swings left and right so as not to interfere with the non-rotating chuck 35, and slides with respect to the lower surface of the wafer W (FIG. 3(b)). Accordingly, each brush 51 moves in the same sliding direction as each other while being disposed at different positions along the sliding direction, which is the orbital direction. That is, when the two brushes 51 slide the wafer W, the other brush 51 moves to follow one brush 51 from the rear in the sliding direction. Moreover, when the two brushes 51 are used as a jaw, the said rocking|fluctuation will be performed so that this jaw may move the same amount left and right on the basis of the imaginary line L5.

When the cup 3 moves from the rear position toward the front position while the brush 51 swings, and the entire central part is slid and cleaned by the brush 51 (FIG. 3(c)), the cup 3 movement, discharge of the cleaning liquid from the nozzle 36, and rotation and revolution of the brush 51 stop.

Each brush 51 descends and moves to the non-processing position, the cup 3 moves to the lower position, the center of the lower surface of the wafer W is adsorbed and held by the spin chuck 12, and the non-rotating chuck 35 ) of the wafer W is released. Then, the air is discharged from the air knife 18 , the cleaning liquid is discharged from the nozzle 36 , and the wafer W is rotated by the spin chuck 12 . In addition, since the wafer W is moving together with the cup 3 as described, the discharge position of the cleaning liquid at this time is the periphery of the wafer W. As shown in FIG. When each brush 51 revolves and is positioned, for example, on the right side with respect to the virtual line L5, it rises and rotates (rotates) to the processing position, and is pressed against the periphery of the lower surface of the wafer W. The periphery is cleaned. That is, the processing is performed by using the rotation direction of the wafer W as the sliding direction, and the brushes 51 sliding in the same sliding direction as each other. In addition, at this time, each brush 51 is arrange|positioned at mutually different positions in the radial direction of the wafer W. As shown in FIG.

After the brush 51 is pressed, the wafer W is rotated one or more times to complete the cleaning of the entire periphery of the wafer W, and the cleaning performed when the wafer W is held by the non-rotating chuck 35 and At the same time, when the entire lower surface of the wafer W is cleaned, the rotation of the wafer W and the rotation of the brush 51 stop, respectively. The brush 51 moves away from the wafer W by descending, turning and rising, exits the bottom of the cup 3 and returns to the waiting area 26 , and also stops discharging the cleaning liquid from the nozzle 36 . . Then, the wafer W is transferred to the transfer mechanism by lifting and lowering the support pins 16 and transferred from the cleaning apparatus 1 .

According to the cleaning apparatus 1, when cleaning the central portion of the lower surface of the wafer W, the brushes 51A and 51B simultaneously pressed as described above are moved in the same sliding direction so as to swing. For this reason, even if the amount of rotation of the stage 41 for revolving the brush 51 is relatively small, the brushes 51A and 51B reach the desired positions on the right side and the desired positions on the left side of the central portion of the wafer W, respectively, for cleaning. can do. By suppressing the amount of rotation of the stage 41 required for cleaning in this way, cleaning of the central portion of the lower surface of the wafer W can be completed quickly. In addition, since cleaning is performed simultaneously by each brush 51 even when processing the peripheral edge of the wafer W, cleaning can be completed quickly. As a result, with respect to the washing|cleaning apparatus 1, high throughput can be obtained. Further, in cleaning the periphery of the lower surface of the wafer W, the brushes 51 are disposed at different positions in the radial direction of the rotating wafer W. As shown in FIG. Therefore, a wide range of the periphery of the wafer W is cleaned simultaneously, and a higher throughput can be obtained more reliably.

In the above processing example, in cleaning the periphery of the lower surface of the wafer W, the wafer W is rotated in a clockwise direction and each brush 51 is rotated in a counterclockwise direction, that is, the wafer W and the brush 51 are rotated in opposite directions. By rotating the wafer W, a relatively strong load is applied to the back surface of the wafer W, so that a high cleaning effect can be obtained. However, it is not limited to setting it as such a relationship of a rotation direction, Each brush 51 can be rotated (rotated) in arbitrary directions. For example, in the example shown in FIG. 4, unlike the example shown in FIG. 3, about the brush 51B, it is rotated clockwise. Moreover, you may rotate (rotate) in arbitrary directions also about the brush 51A.

In addition, in the above processing example, when cleaning the periphery of the wafer W, each brush 51 does not revolve and the position is fixed with respect to the rotating wafer W. However, in fixing the position in this way, is not limited. In the example shown in FIG. 5, each brush is made to revolve counterclockwise from the state where the imaginary line L5 is located between the brushes 51A and 51B, and slides to the brush 51 in the periphery of the rotating wafer W. The region to be used is moved from the position toward the center of the wafer W to the periphery. By this operation, the periphery of the wafer W may be cleaned. In addition, even when the brush 51 is moved in this way, since the different positions in the radial direction of the wafer W are individually cleaned by the brush 51, the processing of the periphery can be completed quickly.

[Second embodiment]

A washing apparatus 1A according to the second embodiment will be described with reference to a side view shown in FIG. 6 . 1A of washing|cleaning apparatus is equipped with the washing|cleaning processing part 6 instead of the washing|cleaning processing part 4, The difference of the washing|cleaning processing part 6 and the washing|cleaning processing part 4 is mainly demonstrated about the following. As described, the stage 41 rotates about the central axis R1, but the rotation mechanisms 43 and 44 are not provided on the stage 41, and the support arm 61 is horizontally moved from the stage 41. is extended And the circular stage 63 is provided horizontally above the rotation mechanism 62 provided in the front-end|tip part of the support arm 61. As shown in FIG. The stage 63 is rotatable around the vertical central axis R2 by the rotating mechanism 62 . In addition, in this embodiment, the rotation direction of the stage 63 is a clockwise direction in planar view.

Rotation mechanisms 43A and 44A corresponding to the rotation mechanisms 43 and 44 described above the stage 63 are respectively provided, and these rotation mechanisms 43A and 44A have the shaft 52 . It is connected to a brush through the interposition, and each brush can be rotated similarly to 1st Embodiment. In addition, the stage 63 can raise/lower the rotation mechanisms 43A, 43B individually, and can move each brush between a process position and a non-process position.

The brush connected to 43 A of rotation mechanisms is the brush 51 similarly to 1st Embodiment. A brush 53 is connected to the rotation mechanism 44A instead of the brush 51 . In each embodiment after this 2nd embodiment, the brush 51 is a 1st brush, and the brush 53 is a 2nd brush. The brush 53 is configured in a circular shape having the same size as that of the brush 51 in plan view, and is rotated (rotated) around its center by the rotation mechanism 44A in plan view, but the brushes 51 and 53 ), the elasticity of the brush 53 is lower than that of the brush 51 . The brush 53 grinds the lower surface of the wafer W by sliding its upper sliding surface with respect to the wafer W to scrape off foreign matter adhering to the wafer W. Further, for example, when the sliding surface of the brush 51 with respect to the wafer W is made of resin, the sliding surface of the brush 53 with respect to the wafer W is higher than the sliding surface of the brush 51 . Provide detailed unevenness (凹凸).

In this second embodiment, the movement of the brushes 51 and 53 is controlled so that the brush 51 slides over the area where the brush 53 slides on the lower surface of the wafer W, and the brush 53 moves. The cutting debris generated on the lower surface of the wafer W by the sliding movement of is removed by the sliding movement of the brush 51 . In the present specification, the polishing treatment is included in the cleaning treatment, but for convenience of explanation, the treatment by pressing the brush 53 is polished, and the treatment by pressing the brush 51 is cleaning. there is In addition, in this 2nd Embodiment, both the brushes 51 and 53 rotate (rotate) counterclockwise.

In this embodiment, the rotation around the central axis R1 of the stage 41 is performed to move the brushes 51 and 53 between the standby region 26 and the lower surface of the wafer W, and the wafer W ), revolution of the brushes 51 and 53 is performed by rotation around the central axis R2 of the stage 63 . Therefore, the central axis R2 becomes the revolution axis (orbital axis) of the brushes 51 and 53 . In a plan view, the centers of the brushes 51 and 53 are located on the diameter of the stage 63 and are also located equidistant from the central axis R2. Moreover, in planar view, the brushes 51 and 53 are provided adjacent to each other, and the diameter of the brushes 51 and 53 is substantially the same as the radius of the stage 63 . The diameter of a circle formed by the orbit of the brushes 51 and 53 (orbit of revolution centered on the central axis R2) is smaller than the radius of the wafer W, and processing of the periphery of the wafer W, which will be described later At the time, the brushes 51 and 53 rotate (orbit) so that this orbit of rotation overlaps with the periphery of the wafer W.

The operation of the cleaning apparatus 1A will be mainly described with reference to FIGS. 7 to 9 , focusing on the difference between the operation and the cleaning apparatus 1 . 7 to 9, the imaginary lines L3 to L5 are shown as in FIG. 3, and the imaginary line L4 drawn so as to pass through the central axis R1 in FIG. 3 to indicate the position of the orbital axis of the brush being processed. , L5 are drawn so as to pass on the central axis R2 instead of on the central axis R1.

When the wafer W is conveyed to the cleaning apparatus 1A, the wafer W is adsorbed and held by the non-rotating chuck 35 . Then, by rotation of the stage 41 , the brushes 51 and 53 move from the standby region 26 to the lower side of the wafer W, and the central axis R2 of the stage 63 (the orbital axis of the brush). and the arrangement of the centers of the spin chuck 12 coincides with the forward and backward movement directions of the cup 3 (FIG. 7(a)). Then, the cup 3 is moved to the rear position, and with the brush 51 located in the non-processing position, the brush 53 is rotated (rotated) to rise to the processing position and pressed against the lower surface of the wafer W. do. On the other hand, the cleaning liquid is discharged from the nozzle 36 and supplied to the central portion of the lower surface of the wafer W.

The rotation of the stage 63 causes the brush 53 to revolve, and the periphery of the center of the lower surface of the wafer W is polished along the circumferential direction (FIG. 7(b)). After the brush 53 is pressed, the stage 63 rotates one revolution, and when the entire central portion of the wafer W is polished, the rotation of the brush 53 stops and descends to the non-processing position, while the brush 51 moves It rotates (rotates) and rises to the processing position, and is pressed against the lower surface of the wafer W. As the rotation of the stage 63 continues, the circumference of the center of the lower surface of the wafer W is cleaned along the circumferential direction (FIG. 7C). After the brush 51 is pressed, the stage 63 rotates by one rotation to clean the entire central portion of the wafer W, and the brush 51 stops rotating and descends to a non-processing position. In addition, the discharge of the cleaning liquid from the nozzle 36 is temporarily stopped.

After this, the cup 3 moves to the forward position and also toward the lowered position, so that the spin chuck 12 holds the wafer W instead of the non-rotating chuck 35 (Fig. 8(a)). ). Next, the stage 63 is rotated so that the centers of the brushes 51 and 53 coincide with the imaginary line L5 in a plan view, and the brush 53 is closer to the center of the wafer W than the brush 51 is. are placed On the other hand, the wafer W rotates, and discharging of the cleaning liquid from the nozzle 36 is resumed, and the cleaning liquid is supplied to the periphery of the wafer W.

Then, with the brush 51 positioned in the non-processing position, the brush 53 rotates (rotates) to rise to the processing position, and when pressed against the lower surface of the wafer W, the stage 63 rotates and the brush 53 rotates. moves toward the peripheral edge of the wafer W (FIG. 8(b)). The brush 53 slides along the circumference of the wafer W by the rotation of the wafer W, and the brush 53 revolves by the rotation of the stage 63, so that the position at which this slide moves is the wafer W ) toward the perimeter of the In this way, the processing of the wafer W by only the brush 53 among the brushes 51 and 53 corresponds to the first sliding step. In addition, the collective (simultaneous) turning of the brushes 51 and 53 by rotation of the stage 63 corresponds to a turning process. Then, after the brush 53 moves to the treatment position and immediately before the stage 63 semi-rotates, the brush 51 rotates (rotates) and moves toward the treatment position. When the brush 53 starts descending toward the non-processing position, and the stage 63 rotates halfway, both the brushes 51 and 53 are pressed against the wafer W, and the brushes 51 and 53 in plan view. ) is in a state where the center is located on the imaginary line L5 (FIG. 8(c)). That is, in a state in which the pressing force of the brush 53 remains on the wafer W, the pressing force by the brush 51 is applied to the wafer W. Further, by moving the brush 53 to this position, it reaches the peripheral edge of the wafer W, and polishing of the entire periphery of the wafer W is completed.

Also, as the stage 63 rotates, the brush 51 moves toward the peripheral edge of the wafer W. As shown in FIG. On the other hand, the brush 53 moves away from the wafer W and descends toward the non-processing position (FIG. 9(a)). Then, after the brush 51 is positioned at the processing position, the stage 63 rotates halfway, and the centers of the brushes 51 and 53 coincide with the imaginary line L5 in a plan view, so that the wafer by the brush 51 is The cleaning of the entire periphery of (W) is completed (FIG. 9(b)). In this way, the processing of the wafer W by only the brush 51 among the brushes 51 and 53 corresponds to the second sliding step. Lowering of the brush 51 to the non-processing position, stopping the rotation of the brush 51, stopping the discharge of the cleaning liquid from the nozzle 36, and stopping the rotation of the wafer W are made, and the wafer W is It is carried out from the washing|cleaning apparatus 1A.

As described above, in the cleaning apparatus 1A, the brushes 51 and 53 are disposed at different positions in the orbital direction, which is the sliding direction with respect to the wafer W, respectively, when processing the peripheral edge of the wafer W. As shown in FIG. Then, these brushes 51 and 53 are pressed against the wafer W at the same time, and since the timing for performing polishing and cleaning in parallel is provided, polishing and cleaning processing are performed promptly. In the case of processing the central portion of the wafer W, the brush 53 moves to the non-processing position and then the brush 51 moves to the processing position. At the time of switching (51, 53), the brushes (51, 53) may be simultaneously pressed against the wafer (W).

By the way, although the brushes 51 and 53 are simultaneously pressed during processing of the periphery of the wafer W as described above, for example, after the brush 53 is removed from the wafer W, the brushes 51 are pressed at intervals. Says In this case, from the state in which a relatively large pressing force was applied by the brush 53 , the pressing force is lost due to the separation of the brush 53 , and the posture of the wafer W is changed. The periphery of the wafer W may vibrate up and down due to the action of the centrifugal force of the rotation of the wafer W and the change of the posture. Such vibration may cause damage to the resist film formed on the surface of the wafer W, which may affect the yield of the semiconductor device. By pressing the brushes 51 and 53 simultaneously, the occurrence of such a problem can be suppressed.

10 is a schematic diagram showing the brushes 51 and 53 when they are all pressed against the wafer W as shown in FIG. 8(c). As described, the brushes 51 and 53 rotate counterclockwise, ie in the same direction. Due to the rotation of the brush 53 , the cleaning liquid containing the cutting debris generated by the polishing of the brush 53 scatters toward the brush 51 . In the figure, the cleaning liquid directed to the brush 51 is indicated by an arrow as 71 . On the other hand, when the brush 51 rotates in the same direction as the brush 53 , the cleaning liquid 72 , indicated by an arrow, scatters from the brush 51 toward the brush 53 so as to have a relatively strong vector. Therefore, the vector of the cleaning liquid 71 including the cutting debris is eliminated or weakened by the vector of the cleaning liquid 72 . For this reason, it is suppressed that cutting dregs adhere to the brush 51 . Therefore, the frequency of washing|cleaning the brush 51 in the standby|standby area|region 26 can be reduced, and the operation efficiency of the washing|cleaning apparatus 1B can be made high. Moreover, even if it makes both the brushes 51 and 53 rotate clockwise, operation efficiency can be made high in this way. In addition, in order to more reliably prevent the adhering of the cutting debris to the brush 51 , the rotation speed of the brush 51 when pressed against the wafer W is set so that the vector of the cleaning liquid 72 becomes larger. ) may be larger than the number of revolutions.

[Third embodiment]

The cleaning apparatus 1B according to the third embodiment will be described with reference to FIG. 11 , focusing on differences from the cleaning apparatus 1 according to the first embodiment. Although this washing|cleaning apparatus 1B is equipped with the washing|cleaning process part 4 similarly to the washing|cleaning apparatus 1 of 1st Embodiment, instead of the brush 51A, the brush 53 is provided. In the cleaning apparatus 1B, the central portion of the lower surface of the wafer W is performed by swinging the brush while the wafer W is held by the non-rotating chuck 35 as described in the first embodiment. (53) is different in that the processing is performed using the brush 51 sequentially. Specifically, among the brushes 51 and 53, only the brush 53 is moved to the treatment position, and the brush 53 is rotated (rotated) and oscillated (revolved) as in the brush 51 of the first embodiment. ) to polish. After this, only the brush 51 is moved to a processing position among the brushes 51 and 53, and rotation (rotation) and rocking|fluctuation of the said brush 51 are performed, and it wash|cleans. Further, similarly to the first embodiment, the cup 3 is moved in the front-rear direction during processing by the brushes 51 and 53 so that the entire central portion of the wafer W is processed. Specifically, for example, it is moved from the rear position to the front position during processing with the brush 53 , and then returned to the rear position again, and moved from the rear position to the front position even during processing with the brush 51 .

After the processing of the central portion of the lower surface of the wafer W, the wafer W is held by the spin chuck 12 and the peripheral portion of the lower surface of the wafer W is processed. 11 shows the processing process of this peripheral part. First, in a plan view, the center of the brush 53 is positioned on the imaginary line L5. Then, the wafer W is rotated, the brush 51 and the brush 53 are raised from the non-processing position to the processing position, and then rotated and pressed against the wafer W (FIG. 11(a)). Then, the stage 41 rotates clockwise, the brush 53 revolves toward the peripheral edge of the wafer W, and the brush 51 follows the brush 53 around the wafer W. orbit towards the edge. Therefore, the brush 51 moves so that it may follow the movement path|route of the brush 53 in the wafer W in planar view (FIG.11(b)). Accordingly, the area to be polished moves toward the periphery of the rotating wafer W, and the region to be cleaned moves toward the periphery of the wafer W following the movement of the polishing region.

When the brush 53 is positioned at the periphery of the wafer W and polishing of the entire periphery of the wafer W is completed, the brush 53 returns to the non-processing position and stops rotating. The revolution of the brush 51 due to the rotation of the stage 41 continues, and when the brush 51 is positioned at the periphery of the wafer W and cleaning of the entire periphery of the wafer W is completed (FIG. c)), the brush 51 returns to the non-processing position, and stops rotating.

Also in the cleaning apparatus 1B described above, since the brushes 51 and 53 are simultaneously pressed against the periphery of the lower surface of the wafer W and slide and move in the rotational direction of the wafer W, polishing and cleaning are performed simultaneously. It is possible to reduce the time required to perform the operation, and high throughput can be obtained. In the cleaning apparatus 1B, the stage 41 rotates in the described direction during processing of the periphery of the wafer W, so that the brushes 51 and 53 face upstream in the rotational direction of the wafer W. will orbit. As described above, by moving the brushes 51 and 53 against the rotational direction of the wafer W, the frictional force between the brushes 51 and 53 and the wafer W is increased, and the polishing force by the brush 53 and the brush The cleaning power according to (51) can be made higher.

<First Modification of Third Embodiment>

A cleaning apparatus 1C according to a first modification of the third embodiment is shown in FIG. 12 . As a difference from the washing|cleaning device 1B in 1C of washing|cleaning apparatuses, the thing in which the position in which the brush 51 and the brush 53 are provided is reversed is mentioned. That is, compared with the washing|cleaning apparatus 1 of 1st Embodiment, the brush 53 is provided instead of the brush 51B. About the processing of the periphery of the lower surface of the wafer W by the cleaning apparatus 1C, although it is performed substantially similarly to the cleaning apparatus 1B, it moves to the peripheral edge of the wafer W in order of the brushes 53 and 51. As a rotation direction of the stage 41, unlike the washing|cleaning apparatus 1B, it turns into a counterclockwise direction so that it may be. As shown in the example of the cleaning apparatuses 1B and 1C, the revolution direction of the brushes 51 and 53 may be either a clockwise direction or a counterclockwise direction, and the arrangement of the brushes 51 and 53 may also be in this rotation direction. It can be changed accordingly.

<Second Modification of Third Embodiment>

A cleaning apparatus 1D according to a second modification of the third embodiment is shown in FIG. 13 . In this washing|cleaning apparatus 1D, the stage 41 is not provided, but stage 45A, 45B is arrange|positioned and provided in the rear side of the air knife 18 left and right. The stages 45A and 45B are each configured to be rotatable around rotation axes R3 and R4 in the vertical direction, and have arms 46A and 46B extending horizontally, respectively. A lifting mechanism is provided at the distal end of each of the arms 46A and 46B, and rotation mechanisms 43A and 44A are provided on the lifting mechanism. The brushes 51 and 53 are connected to the rotation mechanisms 43A and 43B, respectively, as described above.

Accordingly, the rotation shafts R3 and R4 form an orbital shaft (orbital shaft) with respect to the brushes 51 and 53, respectively. Thus, the structure in which an individual revolution shaft is provided for every brush 51, 53 may be sufficient. In embodiments other than the third embodiment, the plurality of brushes may be made to revolve around different revolving axes, but as in the first embodiment or the like, by collectively revolving around a common revolving axis, the device configuration is simplified, It is advantageous since the manufacturing cost of an apparatus can be suppressed.

[Fourth embodiment]

A cleaning apparatus 1E according to a fourth embodiment will be described with reference to Fig. 14A. When describing the difference between the cleaning apparatus 1D and the cleaning apparatus 1B of the third embodiment, it is assumed that a total of three brushes, the brushes 51A and 51B and the brush 53, are provided on the periphery of the stage 41. can be heard A brush 51A, a brush 53, and a brush 51B are arranged in the order of the brush 51A, the brush 53, and the brush 51B along the circumferential direction of the stage 41 in planar view, These brushes 51A, 51B, 53 are the stage 41. is provided on the periphery of And the brush 53 is arrange|positioned close to the brushes 51A, 51B in planar view, and the center of the brush 51A, 51B, 53 is located equidistant from the central axis R1 of the stage 41. . The stage 41 in the fourth embodiment is provided with three rotating mechanisms capable of moving up and down in the circumferential direction, similarly to the rotating mechanisms 43 or 44 described above, and the brushes 51A, 51B and 53 are respectively attached to the rotating mechanism. By being connected, independent rotation (rotation) and elevation are possible.

And in the washing|cleaning apparatus 1E, similarly to the washing|cleaning apparatus 1B of 3rd Embodiment, the brush 51 for washing|cleaning and the brush 53 for abrasion swing|fluctuate by switching of the rotation direction of the stage 41. By doing so, the center of the lower surface of the wafer W is processed. However, with respect to the brushes 51A and 51B, the raising/lowering of each brush is controlled so that one of them along the revolving direction (rotational direction of the stage 41) is pressed against the wafer W, and among the brushes that slide the wafer W. The brush 53 takes the lead.

Specifically, in a state in which the wafer W is held by the non-rotating chuck 35, for example, as shown in FIG. 14A , in a plan view, the center of the brush 53 is L5), and from the state in which each brush is positioned at the non-processing position and rotates, the brushes 53 and 51A rise and move to the processing position. And the stage 41 rotates counterclockwise in planar view, the brush 53 faces a position shifted to the left with respect to the imaginary line L5, and follows the brush 53 and the brush 51A It moves (FIG. 14(b)). That is, among the brush arrays arranged side by side with the brushes 51A, 53 and 51B in the turning direction (revolution direction), the brush 51B is placed at a lower position than the other brushes to make an unused brush, and the first cleaning step is performed. do

And when the brush 53 moves away from the imaginary line L5 by a fixed amount, the rotation direction of the stage 41 will switch to a clockwise direction in planar view. When the rotation direction is switched in this way, the brush 51A descends and moves to the non-processing position, and the brush 51B rises and moves to the processing position. And by rotation of the stage 41, the brush 53 goes to the position which shifted|deviated to the right with respect to the virtual line L5, and also follows the brush 53, and the brush 51B moves ((FIG. 14(()) c)). That is, in the brush arrangement described above, the brush 51A is disposed at a lower position than the other brushes, and the second cleaning step of making an unused brush is performed. After that, when the position of the brush 53 moves away from the virtual line L5 by a predetermined amount, the rotational direction of the stage 41 is switched to a counterclockwise direction in plan view. When the rotational direction is switched in this way, the brush 51A moves to the non-processing position and the brush 51B moves to the processed position, and by rotation of the stage 41, the brush 53 moves to the imaginary line L5. towards a position deviated to the left with respect to The movement and raising and lowering of the brush 53 are repeated, so that the center of the wafer W is processed.

Also in this cleaning apparatus 1E, as described above, since polishing and cleaning can be simultaneously performed on the central portion of the lower surface of the wafer W, high throughput can be obtained. In addition, although detailed description is abbreviate|omitted about the process of the periphery of the lower surface of the wafer W, for example, using any one of the two brushes 51 (51A, 51B) and the brush 53, 3rd Embodiment As shown in , processing may be performed by sliding each brush on the wafer W.

<Modification of the fourth embodiment>

Regarding the cleaning apparatus 1F according to the modified example of the fourth embodiment, when the difference from the cleaning apparatus 1E is described with reference to Fig. 15A, two brushes 53 (referred to as 53A and 53B). and the one provided with the brush 51 is mentioned. The brushes 53A and 53B are provided at positions where the brushes 51A and 51B in the cleaning device 1E are provided, respectively, and the brush 51 is provided with the brush 53 in the cleaning device 1D. It is provided in a location where Therefore, each brush is arranged in order of 53B, 51, 53A in planar view on the periphery of the stage 41, and is provided.

In processing the central part of the lower surface of the wafer W, each brush is shaken by switching the rotation direction of the stage 41 similarly to the cleaning apparatus 1E. And with respect to the brush which slides on the lower surface of the wafer W, the raising/lowering operation|movement of each brush is controlled so that the brush 53 may become a head. More specifically, as shown in Fig. 15B, when the stage 41 rotates counterclockwise, the brush 53B and the brush 51 are positioned at the processing positions, while the brush 53A is located in the unprocessed position. That is, in the brush assembly arranged side by side with the brushes 53A, 51, and 53B in the turning direction (revolution direction), the brush 53A is disposed at a lower position than the other brushes, and the first cleaning step of making an unused brush is performed. . And when the stage 41 rotates clockwise as shown to FIG.15(c), while the brush 53B and the brush 51 are located in a processing position, the brush 53B is a non-processing position. located in That is, in the brush arrangement described above, the brush 53B is disposed at a lower position than the other brushes, and the second cleaning step of making an unused brush is performed.

Also in this washing|cleaning apparatus 1E, high throughput can be obtained by grinding|polishing and washing|cleaning being performed simultaneously. In addition, since the brush 53 polishes the wafer W, compared with the brush 51, the frictional force received from the wafer W during sliding movement is large, and it is easy to deteriorate. However, in the cleaning device 1E, since the two brushes 53 are switched as described above, the service life of the brushes 53 can be increased, and the replacement frequency of the brushes 53 can be reduced. There is an advantage.

[Fifth embodiment]

16A and 16B show a cleaning apparatus 1G according to a fifth embodiment, in which the cleaning apparatus 1G is a brush of the cleaning apparatus 1B according to the third embodiment described with reference to FIG. 11 . Instead of (53), the brush 55 is provided, and in this cleaning apparatus 1G, the brushes 51 and 55 correspond to the first brush and the second brush, respectively. This brush 55 is used for both polishing and cleaning. When the brush 55 is described with reference to the perspective view of FIG. 17 , the brush 55 is provided with a circular and horizontal base 56, and is located at the center of the base 56 from below the shaft ( 52) is connected. Via the shaft 52, the brush 55 is connected to the above-described rotation mechanism 44, and can rotate and move up and down in the circumferential direction.

On the periphery of the base 56, a substantially annular abrasive portion 57 is provided along the periphery. The abrasive portion 57 is constituted by having circular arc-shaped polishing members provided at intervals in the circumferential direction of the base 56 in plan view, and grooves 59 for discharging the cleaning liquid between the polishing members. is formed. The polishing portion 57 corresponds to the brush 53 for polishing described above, and the upper end surface of the polishing portion 57 forms a sliding surface 57A (first sliding surface) with respect to the wafer W. . In addition, although the grinding|polishing part 57 is a sheet shape, for example, it is displayed in FIG. 16 thicker than FIG. 17 for convenience. In addition, an annular cleaning portion 58 is provided along the circumference of the base 56 surrounded by the polishing portion 57 . The cleaning unit 58 corresponds to the brush 51 described above, and the upper end surface of the cleaning unit 58 forms a sliding surface 58A (second sliding surface) with respect to the wafer W. Like the brush 51 , the cleaning unit 58 has elasticity, so that the brush 55 is not pressed against the wafer W and the cleaning unit 58 does not receive a pressing force from the wafer W. In this state, the sliding surface 58A is located above the sliding surface 57A. Fig. 17 shows the washing unit 58 in a state in which the pressing force is not received, and Fig. 16 also shows the washing unit 58 in the case where it is assumed that the pressing force is not received by a dotted line.

When the brush 55 is pressed against the wafer W, the cleaning unit 58 is deformed by its elasticity, so that the heights of the sliding surfaces 57A and 58A can be matched. In polishing the wafer W, the brush 55 is positioned at a polishing treatment position (first position) where both slide surfaces 57A and 58A are pressed against the lower surface of the wafer W, and in cleaning the wafer W The brush 55 is positioned at a cleaning treatment position (second position) where only the sliding surface 58A is pressed against the lower surface of the wafer W.

The process by the washing|cleaning apparatus 1G using FIG. 16 is demonstrated centering around the difference from the washing|cleaning apparatus 1B. First, in processing the central portion of the lower surface of the wafer W, the brush 55 positioned at the polishing treatment position rotates and oscillates to perform polishing (FIG. 16(a)). That is, instead of the brush 53, polishing is performed by the brush 55 positioned at the polishing treatment position. At this time, the brush 51 is located in the non-processing position. After this grinding|polishing, the arrangement|positioning process of positioning the brush 51 in a processing position, and lowering|falling the brush 55 to the processing position for cleaning is performed. Then, the center portion of the lower surface of the wafer W is cleaned by the oscillation of the brushes 51 and 55 (FIG. 16(b)). When the brushes 51 and 55 are pressed against the wafer W in order to perform cleaning in this way, the upper surface of the brush 51 (the sliding surface with respect to the wafer W) is, for example, a pressing force from the wafer W. It is lower than 58A of sliding surfaces at the time of not being received, and is higher than 57A of sliding surfaces of the grinding|polishing part 57. By configuring the brush 55 so that such a positional relationship of height is formed, it is possible to perform the above-mentioned polishing, and since the processing can be performed using both brushes 51 and 55 at the time of cleaning, the apparatus provided in the apparatus The cleaning process can be completed quickly while suppressing the number of brushes.

Although only the processing of the central part of the wafer W has been specifically described, when processing the peripheral edge of the lower surface of the wafer W, the processing described as being performed by the brush 53 with the cleaning apparatus 1B is performed at the polishing processing position What is necessary is just to do it with the brush 55 arrange|positioned to the. You may make it perform with the brush 55 arrange|positioned at the position for a grinding|polishing process also about the grinding|polishing process performed with the brush 53 in each other embodiment. In addition, although shown so that it may be circular as a sliding surface of the brushes 51 and 53 with respect to the wafer W, an annular shape may be sufficient similarly to the grinding|polishing part 57 and the washing|cleaning part 58 of the brush 55.

In each of the embodiments described above, the film formed on the surface of the wafer W is a resist film, but the back surface of the wafer W can be cleaned regardless of the type of film to be formed. In addition, in each embodiment, each brush has been described as rotating when it slides on the wafer W, but without such rotation, rotation of the wafer W and/or revolution of the brush relative to the wafer W Cleaning (including polishing) can be performed by sliding the brush. Therefore, it is not necessary to rotate the brush. In addition, the number of brushes is not limited to the example described, and cleaning can be performed with any number of brushes, and cleaning (including polishing) may be performed by simultaneously pressing three or more brushes against the wafer W.

Further, with respect to each embodiment in which the cleaning apparatus is provided with the brush 53, it has been described that both the peripheral edge and the central portion of the wafer W are polished, but it is not limited to such a processing example, for example, the central portion is only cleaned, You may make it grind|polishing and washing|cleaning only a peripheral part. In addition, about the waiting|standby part 25, it is not limited to the arrangement example shown in FIG. 1 etc., What is necessary is just to arrange|position at the position which overlaps with the area|region where the brushes 51 and 53 rotate by the stage 41, for example, It may be located at the rear.

In addition, it should be thought that embodiment disclosed this time is not restrictive by an illustration in all points. The above embodiments may be omitted, replaced, changed, or combined in various forms without departing from the scope of the appended claims and the spirit thereof.

Claims (20)

A step of holding the lower surface of the substrate on which the film is formed on the upper surface by a substrate holding unit;
A cleaning process in which the first brush and the second brush are simultaneously pressed against the lower surface of the substrate, and then slide relative to the lower surface of the substrate in the same sliding direction for cleaning.
A substrate cleaning method comprising a. The method of claim 1,
The cleaning step includes a step of disposing the first brush and the second brush at different positions in a radial direction of the substrate, rotating each of them, and sliding the first brush and the second brush on the substrate. The method of claim 1,
The first brush has a higher elasticity than the second brush,
The cleaning step includes a step of sliding the first brush and the second brush with respect to the substrate so that the first brush follows the second brush. 4. The method of claim 3,
The first brush, the second brush, and the first brush are arranged in the turning direction in the order of the pivot axis extending in the longitudinal direction, or the second brush, the first brush, and the second brush are arranged in the order a step of turning the array of brushes arranged in the turning direction in a clockwise direction and a counterclockwise direction respectively in a plan view;
The cleaning process is
During the clockwise turning of the arrangement, one brush constituting the arrangement is disposed at a lower position than the other brushes as an unused brush, and the second brush and the first brush following the second brush by turning are formed. a first cleaning step of sliding on the substrate;
During the counterclockwise rotation of the arrangement, one brush different from the unused brushes in the first cleaning process constituting the arrangement is disposed as an unused brush at a lower position than the other brushes, so that the second brush and the A second cleaning step of sliding a first brush following the second brush on the substrate
A substrate cleaning method comprising a. The method of claim 1,
a first sliding step of pressing and sliding only the first brush among the first brush and the second brush against the lower surface of the substrate;
a second sliding step of pressing only a second brush among the first brush and the second brush against the lower surface of the substrate to slide;
In the cleaning step, from performing the first sliding step until the second sliding step is performed, the first brush is lowered and the first brush is raised, so that the first brush is pressed against the substrate. and pressing the second brush against the substrate while remaining therein. 6. The method of claim 5,
a turning process of collectively turning the first brush and the second brush in a turning direction around a pivot axis extending in a longitudinal direction using a circle overlapping the substrate held by the substrate holding part as a turning trajectory;
Each of the cleaning step, the first sliding step, and the second sliding step is performed while the turning step is performed, and the sliding directions of the first brush and the second brush in the cleaning step are is the turning direction,
The first sliding step is a step of turning the first brush along a first arc forming the circle in a state in which the first brush is pressed against the substrate,
The second sliding step is a step of turning the second brush along a second arc different from the first arc and forming the circle in a state in which the second brush is pressed against the substrate. 7. The method according to any one of claims 1 to 6,
The first brush has a higher elasticity than the second brush,
The cleaning process is
and a rotating step of rotating the first brush and the second brush in the same direction in a plan view and pressing the first brush and the second brush on a lower surface of the substrate. 8. The method of claim 7,
The rotating step includes a step of making the rotation speed of the first brush larger than the rotation speed of the second brush. 7. The method according to any one of claims 1 to 6,
The second brush includes a first sliding surface having a first height that slides with respect to the substrate, and a second sliding surface having elasticity and higher than the first height,
a first position where the first slide surface and the second slide surface contact the substrate, and a second position where only the second slide surface of the first slide surface and the second slide surface contacts the substrate; including a step of elevating the second brush between
the cleaning step includes an arrangement step of disposing the first brushes at positions where the sliding surfaces of the first brushes slide with respect to the substrate, respectively, with the second brushes positioned at the second positions; ,
The substrate cleaning method wherein the sliding surface of the first brush in the arrangement step is lower than the first sliding surface when no pressing force is applied to the substrate and higher than the second sliding surface. 7. The method according to any one of claims 1 to 6,
A covering portion for covering the first brush and the second brush from above is provided;
collectively turning the first brush and the second brush around a pivot axis extending in the longitudinal direction;
A step of moving between a waiting area for waiting the first brush and the second brush below the covering portion and a position where each of the first brush and the second brush is pressed against the substrate.
A substrate cleaning method comprising a. 11. The method of claim 10,
A cylinder surrounding the periphery of the substrate held in the substrate holding unit is provided,
When the center of the substrate held by the substrate holding unit and the direction in which the pivot axis are arranged are in the front-rear direction,
The left end of the waiting area does not protrude to the left of the left end of the cylinder,
The right end of the waiting area does not protrude to the right of the right end of the cylinder. A substrate holding part for holding the lower surface of the substrate on which the film is formed on the upper surface;
a first brush and a second brush;
A sliding mechanism for cleaning by pressing the first brush and the second brush against the lower surface of the substrate and sliding them in the same sliding direction relative to the lower surface of the substrate.
A substrate cleaning apparatus comprising a. 13. The method of claim 12,
the sliding mechanism arranges the first brush and the second brush at different positions in a radial direction of the substrate;
and a rotation mechanism for rotating the first brush and the second brush to slide on the substrate. 13. The method of claim 12,
The first brush has a higher elasticity than the second brush,
The slide mechanism is a substrate cleaning apparatus that slides the first brush and the second brush with respect to the substrate so that the first brush follows the second brush. 15. The method of claim 14,
The first brush, the second brush, and the first brush are arranged in the pivoting direction in the order of the pivot axis extending in the longitudinal direction, or in the order of the second brush, the first brush, and the second brush An arrangement of brushes arranged in a turning direction is provided,
The slide mechanism includes a turning mechanism for turning the assembly body in a clockwise direction and a counterclockwise direction respectively in a plan view, and a lifting mechanism for raising and lowering the first brush and the second brush, respectively;
During the clockwise turning of the arrangement, one brush constituting the arrangement is disposed at a lower position than the other brushes as an unused brush, and the second brush and the first brush following the second brush by turning are formed. slide on the substrate, and also
During the counterclockwise turning of the arrangement, one brush different from the unused brushes in the clockwise turning constituting the arrangement is disposed as an unused brush at a lower position than the other brushes, so that the second brush and the A substrate cleaning apparatus for sliding a first brush following a second brush on the substrate. 13. The method of claim 12,
The sliding mechanism includes a lifting mechanism for lifting and lowering the first brush and the second brush, respectively, and a first brush that slides and moves only the first brush among the first brush and the second brush by pressing it against the lower surface of the substrate. slide movement status,
a second sliding state in which only a second brush among the first brush and the second brush is pressed against the lower surface of the substrate to slide;
From the first sliding state until the second sliding state, the first brush is lowered and the first brush is raised, and the second brush is pressed against the substrate while the first brush is pressed. A substrate cleaning apparatus for forming a state to be pressed against the substrate. 16. The method according to any one of claims 12 to 15,
The first brush has a higher elasticity than the second brush,
and a rotation mechanism for rotating the first brush and the second brush in the same direction in plan view, respectively. 16. The method according to any one of claims 12 to 15,
The second brush includes a first sliding surface having a first height that slides with respect to the substrate, and a second sliding surface having elasticity and higher than the first height,
a first position where the first slide surface and the second slide surface contact the substrate, and a second position where only the second slide surface of the first slide surface and the second slide surface contacts the substrate; An elevating mechanism for elevating the second brush is provided between the
wherein the sliding mechanism is configured to arrange the first brush at a processing position in which a sliding surface of the first brush slides with respect to the substrate while the second brush is located at the second position,
The sliding surface of the first brush in the processing position is lower than the first sliding surface when no pressing force is applied to the substrate, and higher than the second sliding surface. 16. The method according to any one of claims 12 to 15,
a covering part covering the first brush and the second brush from above;
a standby region for collectively turning the first brush and the second brush around a pivot axis extending in the longitudinal direction to stand by the first brush and the second brush under the covering portion; and a turning mechanism for moving each of the second brushes to a position where they are pressed against the substrate. 20. The method of claim 19,
A cylinder surrounding the periphery of the substrate held in the substrate holding unit is provided,
When the center of the substrate held by the substrate holding unit and the direction in which the pivot axis are arranged are in the front-rear direction,
The left end of the waiting area does not protrude to the left of the left end of the tubular body,
The substrate cleaning apparatus in which the right end of the said waiting area|region does not protrude more rightward than the right end of the said cylinder.

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