CN114883175A - 碳化硅外延层的缺陷阻障结构及方法 - Google Patents

碳化硅外延层的缺陷阻障结构及方法 Download PDF

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CN114883175A
CN114883175A CN202210161021.6A CN202210161021A CN114883175A CN 114883175 A CN114883175 A CN 114883175A CN 202210161021 A CN202210161021 A CN 202210161021A CN 114883175 A CN114883175 A CN 114883175A
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胡智威
蔡长祐
陈威佑
蔡清富
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Nanjing Baishi Electronic Technology Co ltd
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Abstract

本发明公开了一种碳化硅外延层的缺陷阻障结构及方法，其中缺陷阻障结构包括至少一层设置于碳化硅衬底与碳化硅外延层之间的碳化硅缓冲层，以及至少一层生长于碳化硅衬底和碳化硅缓冲层的之间的碳化硅缺陷阻障层。碳化硅缺陷阻障层的掺杂浓度高于碳化硅衬底，碳化硅缺陷阻障层的掺杂浓度大于等于5E18/cm3且小于等于1E19/cm3。上述技术方案的缺陷阻障层能产生些微的晶格扭曲位移，改变了衬底垂直型位错的伯格向量，减低了垂直型位错往上延伸至外延层的驱动力，从而降低外延层的内部与表面的缺陷数量，可以使外延层缺陷密度低于1/cm2，提高器件性能及良率。

Description

碳化硅外延层的缺陷阻障结构及方法
技术领域
本发明属于碳化硅半导体器件领域，特别涉及一种碳化硅外延层的缺陷阻障结构及方法。
背景技术
碳化硅材料适用于高温、高频、高功率、抗辐射、抗腐蚀等电子器件制造，在通信、汽车、航空、航天、石油开采以及国防等方面有着广泛的应用前景，属于国际高端先进材料。为了实现碳化硅电子器件的研制必须在碳化硅衬底上进行同质外延，生长器件所需的外延结构。
现有技术所生产的碳化硅外延层，其结构都是在高浓度掺杂的碳化硅衬底上堆栈一层浓度缓冲层，根据耐压的设计，接着在缓冲层上根据耐压的设计接着生长不同厚度与参杂浓度的外延层。一般来说，缓冲层对外延层表面缺陷数量有直接影响。目前外延技术能有效控制表面尺寸较大的缺陷，如三角缺陷、胡萝卜缺陷，直线缺陷与彗星缺陷等，缓冲层的成长技术有利用不同的生长温度或是利用不同的成长速率的组合，来达到降低后续外延层的表面缺陷的目的。以上述技术所成长的外延层缺陷密度约在1/cm2。对于高耐压器件来说，此缺陷密度的数量仍然太高，容易影响器件性能与降低良率。
发明内容
发明目的：本发明的目的是提出一种碳化硅外延层的缺陷阻障结构，能同时降低外延层表面缺陷和外延层内的堆叠错位缺陷密度，生产出高质量的碳化硅外延层。
本发明的另一目的是提出一种碳化硅外延层的缺陷阻障方法，可以获得上述缺陷阻障结构，可以使外延层缺陷密度低于1/cm2，提高器件性能及良率。
技术方案：本发明所述的碳化硅外延层的缺陷阻障结构，包括至少一层设置于碳化硅衬底与碳化硅外延层之间的碳化硅缓冲层，还包括至少一层生长于所述碳化硅衬底和所述碳化硅缓冲层的之间的碳化硅缺陷阻障层，所述碳化硅缺陷阻障层的掺杂浓度高于所述碳化硅衬底，所述碳化硅缺陷阻障层的掺杂浓度大于等于5E18/cm3且小于等于1E19/cm3。
进一步的，所述碳化硅缺陷阻障层的厚度大于0.1μm。
进一步的，所述碳化硅缺陷阻障层的掺杂浓度大于等于5E18/cm3，且小于等于7.5E18/cm3。
进一步的，所述碳化硅缺陷阻障层的厚度大于等于4μm，且小于等于10μm。
进一步的，所述碳化硅缓冲层的掺杂浓度介于9E17/cm3～2E18/cm3之间。
进一步的，所述碳化硅缓冲层的厚度介于0.5～2μm之间。
本发明所述的碳化硅外延层的缺陷阻障方法，包括如下步骤：
S1：在温度高于1630℃且碳硅比介于1.2～1.0的条件下，在碳化硅衬底上生长碳化硅缺陷阻障层，控制碳化硅缺陷阻障层的掺杂浓度介于5E18/cm3～1E19/cm3之间，厚度大于0.1μm；
S2：在温度介于1620～1630℃之间且碳硅比介于1.0～0.9的条件下，在碳化硅缺陷阻障层上生长碳化硅缓冲层，碳化硅缓冲层的厚度介于0.5～2μm之间，并将生长速度拉高到1.3～1.5倍；
S3：在温度小于1620℃且碳硅比介于1.0～0.9的条件下，在碳化硅缓冲层上生长碳化硅外延层。
有益效果：与现有技术相比，本发明具有如下优点：不同条件生长的缺陷阻障层能产生些微的晶格扭曲位移，改变了衬底垂直型位错的伯格向量，减低了垂直型位错往上延伸至外延层的驱动力，从而降低外延层的内部与表面的缺陷数量。
附图说明
图1为本发明实施例的缺陷阻障结构的剖面示意图；
图2为有无阻障层的碳化硅外延结构的表面缺陷测试图；
图3为有无阻障层的碳化硅外延结构的内部缺陷测试图；
图4为在不同阻障层掺杂浓度下的六吋碳化硅外延层的表面缺陷数量图；
图5为在不同阻障层厚度下的六吋碳化硅外延层的表面缺陷数量图；
图6为在不同阻障层掺杂浓度下的六吋碳化硅外延层的内部缺陷数量图；
图7为在不同阻障层厚度下的六吋碳化硅外延层的内部缺陷数量图；
图8为本发明实施例的碳化硅外延片的SIMS氮掺杂含量分析图。
具体实施方式
下面结合附图对本发明的技术方案作进一步说明。
参照图1，根据本发明实施例的碳化硅外延层的缺陷阻障结构，包括设置在碳化硅衬底与碳化硅外延层之间的碳化硅缓冲层，以及生长在碳化硅衬底和碳化硅缓冲层之间的碳化硅缺陷阻障层，碳化硅缺陷阻障层的掺杂浓度高于碳化硅衬底，碳化硅缺陷阻障层的掺杂浓度介于5E18/cm3～1E19/cm3之间。
根据上述技术方案的碳化硅外延层的缺陷阻障结构，不同条件下生长的缺陷阻障层可以产生些微的晶格扭曲位移，改变了衬底垂直型位错的伯格向量，从而减低了垂直型位错往上延伸至外延层的驱动力，实现降低外延层的内部与表面的缺陷数量。
实际中，碳化硅缺陷阻障层的厚度宜大于0.1μm，碳化硅缓冲层的掺杂浓度优选介于9E17/cm3～2E18/cm3之间，厚度优选介于0.5～2μm之间。
在本实施例中，以6吋n型衬底为例，碳化硅外延层的缺陷阻障结构可以由如下方法制成：
1)将6吋n型(0001)晶面往<11-20>方向偏轴4°的碳化硅衬底衬底置入SiC外延反应室乘载内基座内；
2)通入氢气，控制反应腔生长压力范围在10-50kpa内，在氢气的环境下升温至1625℃，维持反应室温度10分钟，对衬底进行表面蚀刻；
3)在n型的碳化硅衬底上，在较高温度(>1630℃)和碳硅比介于1.2～1.0条件下，生长第一层氮掺杂的碳化硅缺陷阻障层，氮掺杂浓度为5.5E18/cm3，阻障层生长厚度为4um；
4)接着在第一层缺陷阻障层生长厚度为1um碳化硅缓冲层，且成长温度为1625℃，搭配碳硅比介于1.0～0.9，并将长速拉高到1.3～1.5倍；
5)在碳化硅外延层部分，在成长温度降至低于1620℃，碳硅比介于1.0～0.9的成长条件下所成长的外延层，能同时具备有高均匀性与低外延缺陷的优势。图8为本碳化硅外延结构实施例的氮原子浓度SIMS分析图；
6)维持在氢气环境下，停止通入碳硅气体和氮气，待降温至800℃以下，停止通入氢气，将反应室真空抽至1Kpa以下，再通入氩气至一大气压，循环5次后，打开反应室，取出外延片，采用Lasertec公司的SICA88表面缺陷检测仪对外延片表面进行检测，检测结果如图2和图3所示。通过图片可以看出，相较于相同方法获得的不设有缺陷阻障层的碳化硅外延片，该工艺将外延层表面缺陷密度从1/cm2降低到0.3/cm2，外延层内部缺陷密度从2.5/cm2降低到0.5/cm2，有效提高外延层质量。
实际中，可以通过调节缺陷阻障层外延过程中的氮掺杂浓度与厚度的比例，进一步终止位错的成长，降低外延层的内部与表面的缺陷数量。
图4及图6分别为6吋的n型碳化硅衬底，在碳化硅缺陷阻障层厚度为4μm时，碳化硅缺陷阻障层的氮掺杂浓度分别为1E18/cm3、2E18/cm3、4E18/cm3、5E18/cm3、7.5E18/cm3和1E19/cm3时的外延层表面缺陷数量和内部缺陷数量，由图可知，当碳化硅缺陷阻障层的氮掺杂浓度为5E18/cm3和7.5E18/cm3时，外延层表面及内部缺陷的数量均稳定少于其他掺杂浓度，所以碳化硅缺陷阻障层的氮掺杂浓度优选介于5E18/cm3～7.5E18/cm3之间。
图5和图7分别为6吋的n型碳化硅衬底，在碳化硅缺陷阻障层的氮掺杂浓度为5.1E18/cm3时，碳化硅缺陷阻障层的厚度分别为1μm、2μm、4μm、5μm、7μm和10μm时的外延层表面缺陷数量和内部缺陷数量，由图可知，当碳化硅缺陷阻障层的厚度增加至4μm后，再增加缺陷阻障层的厚度，外延层内部的缺陷数量并无明显减少，且当厚度增加至10μm时，外延层表面的缺陷数量有增长趋势，所以碳化硅缺陷阻障层的厚度优选介于4～10μm之间。

Claims (7)

1.一种碳化硅外延层的缺陷阻障结构，包括至少一层设置于碳化硅衬底与碳化硅外延层之间的碳化硅缓冲层，其特征在于，还包括至少一层生长于所述碳化硅衬底和所述碳化硅缓冲层的之间的碳化硅缺陷阻障层，所述碳化硅缺陷阻障层的掺杂浓度高于所述碳化硅衬底，所述碳化硅缺陷阻障层的掺杂浓度大于等于5E18/cm3且小于等于1E19/cm3。
2.根据权利要求1所述的碳化硅外延层的缺陷阻障结构，其特征在于，所述碳化硅缺陷阻障层的厚度大于0.1μm。
3.根据权利要求1所述的碳化硅外延层的缺陷阻障结构，其特征在于，所述碳化硅缺陷阻障层的掺杂浓度大于等于5E18/cm3，且小于等于7.5E18/cm3。
4.根据权利要求2所述的碳化硅外延层的缺陷阻障结构，其特征在于，所述碳化硅缺陷阻障层的厚度大于等于4μm，且小于等于10μm。
5.根据权利要求1所述的碳化硅外延层的缺陷阻障结构，其特征在于，所述碳化硅缓冲层的掺杂浓度介于9E17/cm3～2E18/cm3之间。
6.根据权利要求1所述的碳化硅外延层的缺陷阻障结构，其特征在于，所述碳化硅缓冲层的厚度介于0.5～2μm之间。
7.一种碳化硅外延层的缺陷阻障方法，其特征在于，包括如下步骤：
S1：在温度高于1630℃且碳硅比介于1.2～1.0的条件下，在碳化硅衬底上生长碳化硅缺陷阻障层，控制碳化硅缺陷阻障层的掺杂浓度介于5E18/cm3～1E19/cm3之间，厚度大于0.1μm；
S2：在温度介于1620～1630℃之间且碳硅比介于1.0～0.9的条件下，在碳化硅缺陷阻障层上生长碳化硅缓冲层，碳化硅缓冲层的厚度介于0.5～2μm之间，并将生长速度拉高到1.3～1.5倍；
S3：在温度小于1620℃且碳硅比介于1.0～0.9的条件下，在碳化硅缓冲层上生长碳化硅外延层。
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