CN114792928A - Laser carrier and manufacturing method thereof - Google Patents
Laser carrier and manufacturing method thereof Download PDFInfo
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- CN114792928A CN114792928A CN202110097958.7A CN202110097958A CN114792928A CN 114792928 A CN114792928 A CN 114792928A CN 202110097958 A CN202110097958 A CN 202110097958A CN 114792928 A CN114792928 A CN 114792928A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 90
- 238000000034 method Methods 0.000 claims abstract description 26
- 229910000679 solder Inorganic materials 0.000 claims description 12
- 238000009713 electroplating Methods 0.000 claims description 5
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 26
- 239000000758 substrate Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 238000010923 batch production Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical class [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The embodiment of the application discloses a laser carrier and a manufacturing method thereof, wherein the laser carrier is used for carrying a laser chip, and a first surface of the laser carrier is provided with: a first conductive layer electrically connected to the first signal line; the second conducting layer is electrically connected with a second signal wire, and the second conducting layer and the first conducting layer are arranged at intervals, wherein the laser chip is arranged on the first conducting layer, and the laser chip is electrically connected with the second conducting layer; and the thin film resistor is formed on the first surface of the laser carrier and is electrically connected with the laser chip through the first conducting layer or the second conducting layer. Therefore, the thin film resistor is directly formed on the laser carrier, impedance matching of the laser is achieved, meanwhile, the thin film resistor occupies a small space, the integration level is increased, the process is simple, and large-scale production is facilitated.
Description
Technical Field
The embodiment of the application relates to the field of semiconductors, in particular to a laser carrier and a manufacturing method thereof.
Background
At present, with the continuous emergence of technologies such as 5G mobile communication, virtual reality, cloud computing and the like, the demand of people for communication bandwidth is explosively increased.
At the light emitting end, an electric signal and a direct current bias signal can be directly loaded on a Laser (Laser) after being mixed by a driver or other methods, and the output light power of the Laser can be changed by changing the input current of the Laser. In order to maximize the bandwidth of the laser-based transmitter module, the impedance of the laser chip needs to be matched when the laser chip is packaged.
For example, the impedance of a commonly used transmission line is 50 Ω, while the impedance of a laser chip is generally about 10 Ω, in order to implement the impedance matching of the laser chip, the laser chip may be connected in series with a 40 Ω termination resistor, so as to improve the impedance value thereof, and implement the 50 Ω impedance matching, wherein the termination resistor may be welded on a substrate, and two wires are respectively led out from two sides of the termination resistor, and are respectively used for connecting the laser chip and a signal line, so as to form a laser module.
However, the substrate of the laser module needs to be additionally mounted with a terminal resistor, so that the laser module occupies a large space, is complex in process and is not beneficial to large-scale production.
Disclosure of Invention
The embodiment of the application provides a laser carrier and a manufacturing method thereof, and solves the problems of large occupied space and complex process of a laser.
In order to achieve the above purpose, the embodiment of the present application adopts the following technical solutions:
in a first aspect of the embodiments of the present application, a laser carrier is provided, where the laser carrier is used to carry a laser chip, and a first surface of the laser carrier is provided with: a first conductive layer electrically connected to the first signal line; the second conducting layer is electrically connected with the second signal wire and is arranged at intervals with the first conducting layer, wherein the laser chip is arranged on the first conducting layer and is electrically connected with the second conducting layer; and the thin film resistor is formed on the first surface of the laser carrier and is electrically connected with the laser chip through the first conducting layer or the second conducting layer. Therefore, the impedance matching is realized by directly forming the film resistor on the laser carrier, and meanwhile, the film resistor occupies small space and is simple in process and beneficial to large-scale production.
In an alternative implementation, the first conductive layer includes: the first sub-conducting layer and the second sub-conducting layer are arranged at intervals, the first sub-conducting layer is electrically connected with the first signal line, and the second sub-conducting layer is provided with the laser chip; the thin film resistor is arranged in a gap between the first sub-conductive layer and the second sub-conductive layer, one end of the thin film resistor is connected with the first sub-conductive layer, and the other end of the thin film resistor is connected with the second sub-conductive layer. Therefore, the thin film resistor can be connected with the laser chip in series through the first conducting layer to achieve impedance matching, at the moment, the sum of the impedance of the laser chip and the impedance of the thin film resistor is basically equal to the impedance of the transmission line, and therefore when the radio-frequency signal on the transmission line is transmitted to the laser chip, reflection basically cannot occur.
In an alternative implementation, the second conductive layer includes: the third sub-conducting layer and the fourth sub-conducting layer are arranged at intervals, the third sub-conducting layer is electrically connected with the laser chip, and the fourth sub-conducting layer is electrically connected with the second signal line; the thin film resistor is arranged in a gap between the third sub-conductive layer and the fourth sub-conductive layer, one end of the thin film resistor is connected with the third sub-conductive layer, and the other end of the thin film resistor is connected with the fourth sub-conductive layer. Therefore, the thin film resistor can be connected with the laser chip in series through the second conducting layer, impedance matching of the laser chip and the transmission line is achieved, at the moment, the sum of the impedance of the laser chip and the impedance of the thin film resistor is basically equal to the impedance of the transmission line, and when the radio-frequency signal on the transmission line is transmitted to the laser chip, reflection basically cannot occur.
In an alternative implementation, the laser chip is connected to the second conductive layer by a first wire. Therefore, the laser chip is electrically connected with the second conducting layer, the connection mode is simple, and batch production is facilitated.
In an alternative implementation, the laser chip is soldered to the first conductive layer by means of solder. Therefore, the laser chip is electrically connected with the first conducting layer, the connection mode is simple, and batch production is facilitated.
In an alternative implementation, the first conductive layer is connected to the first signal line through a second conductive line, and the second conductive layer is connected to the second signal line through a third conductive line. Therefore, the first conducting layer is electrically connected with the first signal wire, the second conducting layer is electrically connected with the second signal wire, the connecting mode is simple, and batch production is facilitated.
In an alternative implementation, the first signal line and the second signal line are disposed on a circuit board. Therefore, the first signal line and the second signal line can be arranged outside the carrier, and are respectively connected with the first signal line, the second signal line and the device arranged on the carrier through the conducting wires, and the space of the carrier can be saved.
In an alternative embodiment, the sheet resistor is formed on the laser carrier by means of electroplating. Therefore, the forming process of the film resistor is simple and easy to form.
In a second aspect of the embodiments of the present application, a method for manufacturing a laser carrier is provided, where the method includes: the laser chip packaging structure comprises a laser carrier and is characterized in that a first conducting layer, a second conducting layer and a thin film resistor are formed on a first surface of the laser carrier, the first conducting layer and the second conducting layer are arranged at intervals, the laser carrier is used for bearing a laser chip, and the thin film resistor is electrically connected with the laser chip through the first conducting layer or the second conducting layer. Therefore, the film resistor is directly formed on the laser carrier, so that impedance matching is realized, meanwhile, the film resistor occupies small space, the process is simple, and the large-scale production is facilitated.
In an alternative implementation, the first conductive layer includes a first sub-conductive layer and a second sub-conductive layer which are arranged at intervals, and the first conductive layer, the second conductive layer and the thin film resistor are formed on the first surface of the laser carrier, which includes: forming the thin film resistor on the first surface of the laser carrier; and forming the first sub-conductive layer, the second sub-conductive layer and the second conductive layer on the first surface of the laser carrier, so that one end of the thin film resistor is connected with the first sub-conductive layer, and the other end of the thin film resistor is connected with the second sub-conductive layer. Therefore, the thin film resistor and the first conducting layer are connected in series, impedance matching is achieved, at the moment, the sum of the impedance of the laser chip and the impedance of the thin film resistor is basically equal to the impedance of the transmission line, and therefore when the radio-frequency signal on the transmission line is transmitted to the laser chip, reflection basically cannot occur.
In an alternative implementation, the second conductive layer includes a third sub-conductive layer and a fourth sub-conductive layer which are arranged at intervals, and the first conductive layer, the second conductive layer and the thin film resistor are formed on the first surface of the laser carrier, which includes: forming the thin film resistor on the first surface of the laser carrier; and forming the first conductive layer, the third sub-conductive layer and the fourth sub-conductive layer on the first surface of the laser carrier, so that one end of the thin film resistor is connected with the third sub-conductive layer, and the other end of the thin film resistor is connected with the fourth sub-conductive layer. Therefore, the thin film resistor and the second conducting layer are connected in series, impedance matching is achieved, at the moment, the sum of the impedance of the laser chip and the impedance of the thin film resistor is basically equal to the impedance of the transmission line, and therefore when the radio-frequency signal on the transmission line is transmitted to the laser chip, reflection basically cannot occur.
Drawings
FIG. 1 is a schematic diagram of a laser module;
FIG. 2 is a schematic diagram of voltage and current at a discontinuity in the transmission line impedance;
FIG. 3 is a schematic view of another laser module;
fig. 4 is a schematic structural diagram of a laser carrier according to an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of another laser carrier provided in an embodiment of the present application;
fig. 6 is a schematic structural diagram of a laser module according to an embodiment of the present disclosure;
fig. 7 is a schematic structural diagram of another laser module according to an embodiment of the present disclosure;
fig. 8 is a flowchart of a method for manufacturing a laser carrier according to an embodiment of the present disclosure;
fig. 9 is a flowchart of another method for manufacturing a laser carrier according to an embodiment of the present disclosure;
FIGS. 10 and 11 are schematic views of the product structure obtained after the steps in FIG. 9 are performed;
fig. 12 is a flowchart of another method for manufacturing a laser carrier according to an embodiment of the present disclosure;
FIGS. 13 and 14 are schematic views of the product structure obtained after the steps in FIG. 12 are performed;
fig. 15 is a flowchart illustrating an assembling method of a laser module according to an embodiment of the present disclosure;
fig. 16, 17 and 18 are schematic views of the product structure obtained after the steps in fig. 15 are performed.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be described in further detail with reference to the accompanying drawings.
In the following, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or as implying any indication of the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present application, the meaning of "a plurality" is two or more unless otherwise specified.
In addition, in the present application, the directional terms "upper", "lower", etc. are defined relative to the schematically disposed orientation of the components in the drawings, and it is to be understood that these directional terms are relative concepts that are used for descriptive and clarifying purposes and that will vary accordingly depending on the orientation in which the components are disposed in the drawings.
Fig. 1 is a schematic structural diagram of a laser module. As shown in fig. 1, the laser module includes: a substrate 01, and a laser chip 011 disposed on a first surface of the substrate 01.
The substrate 01 is, for example, a silicon substrate. The Laser chip 011 is, for example, a semiconductor Laser (LD) chip, and includes: a first pole 012 and a second pole, the laser chip 011 is connected with the signal line 021 through the first pole, and soldered on the substrate 01 through the second pole.
The signal line 021 is provided, for example, on a Flexible Printed Circuit Board (FPBC) 02, and the signal line 021 is used to transmit a signal to the laser chip so that the laser chip 011 emits laser light. The flexible circuit board 02 is attached to a substrate 01, for example.
The impedance of the transmission line (e.g., signal line 021) on the flexible circuit board is, for example, 50 Ω, and the impedance of the laser chip is, for example, 10 Ω.
As shown in fig. 2, the impedance jump between the transmission line Z1 and the transmission line Z2 follows kirchhoff's law, the voltage on both sides of the interface cannot jump, and the current flowing into the interface is equal to the current flowing out of the interface. Here, a transmission line Z1 denotes the laser chip 011 in fig. 1, and a transmission line Z2 denotes the signal line 021 in fig. 1.
Wherein, according to kirchhoff's law:
V in +V ref ＝V trans (1)
wherein, V in For the input voltage of the signal line, V ref To reflect a voltage, V trans Is the output voltage on the laser chip.
I in -I ref ＝I trans (2)
Wherein, I in For input current on the signal line, I ref To reflect the voltage, I trans Is the output current on the laser chip.
Wherein，Z 1 Is the impedance of the laser chip, then Z 1 Satisfies the following conditions:
Z 2 is the input impedance of the signal line, then Z 2 Satisfies the following conditions:
the reflection coefficient Γ is given by equations (1) - (4):
the impedance of the signal line is 50 Ω, while the impedance of the laser is generally about 10 Ω, and the impedance values are far apart (i.e. impedance mismatch), so as to adjust Z 2 ＝50，Z 1 When equation (5) is taken at 10, the reflection coefficient Γ is 2/3.
The reflection of the signal results in a reduction in the transmission power of the signal. Therefore, it is generally necessary to design an impedance matching for the transmission link of the signal, so as to improve the transmission efficiency of the signal. In order to reduce the reflection of signals at the laser, the laser can be connected in series with a resistor, so that the impedance value of the laser is improved, and impedance matching is realized.
As shown in fig. 1, the laser module further includes: and a termination resistance 015. The terminating resistor 015 has an impedance of, for example, 40 Ω, and the terminating resistor 015 may be soldered to the substrate 01 via pads (013, 014).
One end of the resistor 015 is connected to the laser chip 011 through the first wire 016, and the other end is electrically connected to the signal line 021 through the second wire 017, so that the resistor 015 is connected in series between the laser chip 011 and the signal line 021.
However, the above embodiment needs to attach an additional terminal resistor on the substrate, and the terminal resistor needs to be accurately attached at the corresponding position during processing, and two wires need to be respectively arranged on two sides of the resistor for connecting the laser chip 011 and the signal line 021, respectively, which complicates the process, increases the processing difficulty, and is not suitable for mass production.
In other embodiments, as shown in fig. 3, the laser module comprises: a substrate 01, and a laser array 010, a circuit board 02 disposed on a first surface of the substrate 01.
Referring to fig. 3, the laser array 010 is soldered on the substrate 01, and the laser array 010 has a plurality of laser chips 011 thereon. The circuit board 02 is provided with a plurality of signal lines 021.
Each of the first electrodes 012 of the laser chips 011 is electrically connected to the signal line 021 through a first wire 016, and the laser array 010 is connected to the circuit board 02 through a second wire 017, so that the laser chips 011 and the circuit board 02 are grounded.
In order to reduce the reflection of the signal at the laser, a resistor can be connected in series at one end of the signal line close to the laser to realize impedance matching.
As shown in fig. 3, the laser module further includes: and a resistor 015 which is provided on the circuit board 02 and is connected in series with the signal line 021.
Wherein, this signal line 021 includes: a first sub-part 0211 and a second sub-part 0212 spaced apart from each other, and the resistor 015 is disposed in a gap between the first sub-part 0211 and the second sub-part 0212, and is electrically connected to the first sub-part 0211 and the second sub-part 0212, respectively.
However, the above embodiment makes the design difficulty and the processing difficulty of the circuit board 02 become large, increasing the processing cost of the circuit board 02.
To this end, embodiments of the present application provide an improved laser carrier. As shown in fig. 4 and 5, a first conductive layer 101 and a second conductive layer 102 are disposed on the first surface of the laser carrier 10, and the first conductive layer 101 and the second conductive layer 102 are disposed at an interval.
The material of the laser carrier is not limited in the embodiments of the present application, and in some embodiments, the laser carrier may be made of a material with good heat dissipation performance, such as aluminum nitride (AlN). Therefore, the heat dissipation performance of the laser carrier is improved.
The first conductive layer 101 may be, for example, a cathode of the carrier, and the second conductive layer 102 may be, for example, an anode of the carrier. As shown in fig. 6 and 7, the first conductive layer 101 may be electrically connected to a first signal line 201, and the second conductive layer 102 may be electrically connected to a second signal line 202.
The material of the first conductive layer 101 and the second conductive layer 102 is not limited in the embodiments of the present disclosure, and in some embodiments, a metal material, such as gold (Au), may be used for the first conductive layer 101 and the second conductive layer 102.
As shown in fig. 4 and 5, the laser carrier 10 is used for carrying a laser chip 104, the laser chip 104 is disposed on the first conductive layer 101, and the laser chip 104 is electrically connected to the first conductive layer 101 and the second conductive layer 102.
The laser chip 104 according to the embodiment of the present application may be a semiconductor laser chip. The laser chip can emit laser after being excited by current.
To reduce the reflection of the signal at the laser chip 104, a suitable resistor needs to be connected in series with the laser chip 104, so that the rf signal on the transmission line is transmitted to the laser chip 104 as much as possible.
Generally, the impedance of the transmission line is 50 ohms, and in order to ensure that the impedance of the laser chip 104 matches the impedance of the transmission line, that is, the rf signal on the transmission line is transmitted to the laser chip 104 as much as possible, a 40-ohm matching resistor needs to be connected in series with the laser chip 104. At this time, the sum of the impedance of the laser chip and the impedance of the thin film resistor is substantially equal to the impedance of the transmission line, so that when the radio-frequency signal on the transmission line is transmitted to the laser chip, reflection does not occur substantially.
As shown in fig. 4 and 5, the laser carrier further includes: a thin film resistor 105, wherein the thin film resistor 105 is formed on a first surface of the laser carrier, and the thin film resistor 105 is electrically connected with the laser chip 104 through the first conductive layer 101 or the second conductive layer 102.
As shown in fig. 4, the thin film resistor 105 is connected in series with the laser chip 104 through the first conductive layer 101.
As shown in fig. 5, the thin film resistor 105 is connected in series with the laser chip 104 through the second conductive layer 102.
The structure and process of the thin film resistor 105 are not limited in this embodiment. In some embodiments, the thin film resistor 105 can be formed by electroplating a material with a certain resistivity on the surface of the carrier. The material of the thin film resistor 105 may be tantalum nitride (TaN).
The thin-film resistor 105 and the first conductive layer 101 or the second conductive layer 102 are both arranged on a first surface of the laser carrier, and the thin-film resistor 105 and the first conductive layer 101 and the second conductive layer 102 are for example located in the same plane.
Therefore, the thin film resistor 105 occupies a small space and is easy to form, impedance matching is achieved, meanwhile, the occupied space is reduced, the process is simple, and large-scale production is facilitated.
In some embodiments, the first surface of the laser carrier may also be plated with titanium Tungsten (TiW) prior to plating the sheet resistor, and then attaching the sheet resistor to the titanium tungsten layer.
The structure of the first conductive layer 101 and the second conductive layer 102 is not limited in this embodiment. In some embodiments, the first conductive layer 101 or the second conductive layer 102 includes at least 2 sub-conductive layers arranged at intervals, the thin film resistor 105 is arranged in a gap between the 2 sub-conductive layers, and two ends of the thin film resistor 105 are respectively connected with the 2 sub-conductive layers.
As shown in fig. 4, the second conductive layer 102 is an integral whole, and the first conductive layer 101 includes: a first sub-conductive layer 1011 and a second sub-conductive layer 1012 arranged at an interval.
The thin film resistor 105 is disposed in a gap between the first sub-conductive layer 1011 and the second sub-conductive layer 1012, and one end of the thin film resistor 105 is connected to the first sub-conductive layer 1011, and the other end is connected to the second sub-conductive layer 1012.
As shown in fig. 5, the first conductive layer 101 is an integral whole, and the second conductive layer 102 includes: a third sub-conductive layer 1021 and a fourth sub-conductive layer 1022 are disposed at intervals.
The thin film resistor 105 is disposed in a gap between the third sub-conductive layer 1021 and the fourth sub-conductive layer 1022, and one end of the thin film resistor 105 is connected to the third sub-conductive layer 1021, and the other end is connected to the fourth sub-conductive layer 1022.
In other embodiments of the present application, the thin-film resistor 105 may be disposed on a side of the first conductive layer 101 away from the second conductive layer 102, or the thin-film resistor 105 may be disposed on a side of the second conductive layer 102 away from the first conductive layer 101 and electrically connected to the second conductive layer 102 and the second signal line 202, respectively.
The embodiment of the present application does not limit the electrical connection manner of the laser chip 104. Wherein the laser chip 104 includes a first pole and a second pole 103, for example, in some embodiments, the first pole of the laser chip 104 may be connected to the first conductive layer 101 by soldering, and the second pole 103 of the laser chip 104 is electrically connected to the second conductive layer 102 by a first wire 106, for example.
The material of the solder is not limited in the embodiments of the present application. In some embodiments, the solder may be a copper-tin alloy (Cu80Sn 20).
As shown in fig. 6 and 7, the present embodiment further provides a laser module, which includes the laser carrier as described above, and a first conductive layer 101, a second conductive layer 102, a laser chip 104, and a thin-film resistor 105 disposed on the laser carrier.
This laser instrument module still includes: a circuit board 20. The circuit board 20 is provided with a first signal line 201 and a second signal line 202.
The first conductive layer 101 is electrically connected to the first signal line 201, for example, by a second conductive line 107, and the second conductive layer 102 is connected to the second signal line 202, for example, by a third conductive line 108. The first signal line 201 and the second signal line 202 are used to transmit signals to the laser chip 104, so that the laser chip 104 emits laser light.
The first conductive layer 101 is, for example, a carrier cathode, and the second conductive layer 102 is, for example, a carrier anode. A first pole of the laser chip 104 is connected to the first conductive layer 101 by soldering, a second pole 103 of the laser chip 104 is electrically connected to the second conductive layer 102 by a first wire 106, for example, the first pole of the laser chip 104 is a cathode, for example, and the second pole 103 of the laser chip 104 is an anode, for example.
The signal transmitted by the second signal line 202 may be transmitted to the first signal line 201 through the second conductive layer 102, the laser chip 104, and the first conductive layer 101 in sequence to form a loop.
The circuit board 20 may be a flexible circuit board. The circuit board 20 is further provided with a first pad 2011 and a second pad 2021, for example, the first pad 2011 is electrically connected to the first signal line 201, and the second pad 2021 is electrically connected to the second signal line 202.
The first conductive layer 101 and the first signal line 201 are electrically connected, and the first conductive layer 101 and the first pad 2011 may be connected by the second wire 107, so that the first conductive layer 101 and the first signal line 201 are electrically connected.
The second conductive layer 102 is electrically connected to the second signal line 202, and the second conductive layer 102 and the second pad 2021 may be connected by the third wire 108, so as to electrically connect the second conductive layer 102 and the second signal line 202.
As shown in fig. 6, the second conductive layer 102 is an integral whole, and the first conductive layer 101 includes: a first sub-conductive layer 1011 and a second sub-conductive layer 1012 arranged at an interval.
The first sub-conductive layer 1011 is electrically connected to the first signal line 201 through a second conductive wire 107, the laser chip 104 is connected to the second sub-conductive layer 1012 by soldering, the second conductive layer 102 is connected to the laser chip 104 through a first conductive wire 106, and the second conductive layer 102 is electrically connected to the second signal line 202 through a third conductive wire 108.
The thin film resistor 105 is disposed in a gap between the first sub-conductive layer 1011 and the second sub-conductive layer 1012, and one end of the thin film resistor 105 is connected to the first sub-conductive layer 1011, and the other end is connected to the second sub-conductive layer 1012.
At this time, the first sub-conductive layer 1011 and the second sub-conductive layer 1012 may be used as electrical connectors of the thin film resistor 105, for example, and the thin film resistor 105 may be electrically connected to the first signal line 201 through the first sub-conductive layer 1011 and electrically connected to the laser chip 104 through the second sub-conductive layer 1012 so as to be connected in series in a line between the laser chip 104 and the first signal line 201 and the second signal line 202.
As shown in fig. 7, the first conductive layer 101 is an integral whole, and the second conductive layer 102 includes: a third sub-conductive layer 1021 and a fourth sub-conductive layer 1022 which are arranged at intervals.
The first conductive layer 101 is electrically connected to the first signal line 201 through the second conductive line 107, the laser chip 104 is connected to the first conductive layer 101 by soldering, the third sub-conductive layer 1021 is electrically connected to the laser chip 104 through the first conductive line 106, and the fourth sub-conductive layer 1022 is electrically connected to the second signal line 202.
The thin film resistor 105 is disposed in a gap between the third sub-conductive layer 1021 and the fourth sub-conductive layer 1022, and one end of the thin film resistor 105 is connected to the third sub-conductive layer 1021, and the other end is connected to the fourth sub-conductive layer 1022.
At this time, the thin film resistor 105 may be electrically connected to the laser chip 104 through the third sub-conductive layer 1021 and electrically connected to the second signal line 202 through the fourth sub-conductive layer 1022, so as to be connected in series in a line between the laser chip 104 and the first and second signal lines 201 and 202.
The embodiment of the present application does not limit the relative position between the thin film resistor 105 and the laser chip 104. In the embodiment of the present application, the thin film resistor 105 should be as close to the laser chip 104 as possible. In this embodiment, the distance between the thin film resistor 105 and the laser chip 104 is less than 0.18 mm.
An embodiment of the present application further provides a method for manufacturing a laser carrier, as shown in fig. 8, the method includes:
s101, forming a first conductive layer 101, a second conductive layer 102 and a thin film resistor 105 on a first surface of a laser carrier.
The laser carrier is used for carrying a laser chip, the first conductive layer 101 and the second conductive layer 102 are arranged at intervals, and the thin film resistor 105 is connected with the laser chip in series through the first conductive layer or the second conductive layer.
In some embodiments, as shown in fig. 9, the first conductive layer 101 includes a first sub-conductive layer 1011 and a second sub-conductive layer 1012 arranged at intervals, and the patterning of the first conductive layer 101, the second conductive layer 102 and the thin film resistor 105 on the first surface of the laser carrier includes:
s101a, as shown in fig. 10, the thin film resistor 105 is molded on the first surface of the laser carrier.
Wherein the thin-film resistor 105 may be patterned on the first surface of the laser carrier by means of electroplating.
In some embodiments, the first surface of the laser carrier may also be plated with titanium Tungsten (TiW) prior to plating the sheet resistor, and then attaching the sheet resistor to the titanium tungsten layer.
S101b, as shown in fig. 11, a conductive material is coated on the first surface of the laser carrier to form a first sub-conductive layer 1011, a second sub-conductive layer 1012 and a second conductive layer 102.
The first sub-conductive layer 1011 and the second sub-conductive layer 1012 are located on two sides of the thin film resistor 105, such that one end of the thin film resistor 105 is connected to the first sub-conductive layer 1011, and the other end is connected to the second sub-conductive layer 1012.
The conductive material may be a conductive metal, such as gold (Au).
In other embodiments, as shown in fig. 12, the second conductive layer 102 includes a third sub-conductive layer 1021 and a fourth sub-conductive layer 1022 which are disposed at intervals, and the molding the first conductive layer 101, the second conductive layer 102 and the thin film resistor 105 on the first surface of the laser carrier includes:
s101c, as shown in fig. 13, a thin film resistor 105 is molded on the first surface of the laser carrier.
In some embodiments, a layer of titanium Tungsten (TiW) may also be electroplated on the first surface of the laser carrier prior to electroplating the sheet resistor, and then the sheet resistor is attached to the layer of titanium tungsten.
S101d, as shown in fig. 14, a conductive material is coated on the first surface of the laser carrier to form a first conductive layer 101, a third sub-conductive layer 1021, and a fourth sub-conductive layer 1022.
The third sub-conductive layer 1021 and the fourth sub-conductive layer 1022 are located at two sides of the thin film resistor 105, such that one end of the thin film resistor 105 is connected to the third sub-conductive layer 1021, and the other end is connected to the fourth sub-conductive layer 1022.
The embodiment of the application further provides an assembling method of the laser module. As shown in fig. 15, the method includes:
s201, forming a first conductive layer 101, a second conductive layer 102 and a thin film resistor 105 on the first surface of the carrier.
The first conductive layer 101 and the second conductive layer 102 are disposed at an interval, and the thin-film resistor 105 is connected in series with the laser chip through the first conductive layer or the second conductive layer.
S202, as shown in fig. 16, mounting a laser chip 104 on the first conductive layer 101, so that the laser chip 104 is electrically connected to the first conductive layer 101.
Wherein the mounting the laser chip 104 on the first conductive layer 101 includes:
solder is provided on the first conductive layer 101, the laser chip 104 is placed on the solder area, and the solder is heated to melt, so that the laser chip 104 is connected to the first conductive layer 101.
As shown in fig. 16 (a), the first conductive layer 101 includes a first sub-conductive layer 1011 and a second sub-conductive layer 1012, and solder 105 may be provided on the second sub-conductive layer 1012, and the laser chip 104 may be soldered on the second sub-conductive layer 1012 by the solder 105.
As shown in fig. 16 (b), the first conductive layer 101 is a single body, and solder 105 may be provided on the first conductive layer 101, and the laser chip 104 may be soldered to the first conductive layer 101 by the solder 105.
S203, as shown in fig. 17, connecting the laser chip 104 and the second conductive layer 102.
Wherein the connecting the laser chip 104 and the second conductive layer 102 includes:
the laser chip 104 and the second conductive layer 102 are connected by a first wire 106.
As shown in fig. 17 (a), the second conductive layer 102 is a single body, and one end of the first conductive line 106 may be directly connected to the second conductive layer.
As shown in (b) of fig. 17, the second conductive layer 102 includes a third sub-conductive layer 1021 and a fourth sub-conductive layer 1022, and one end of the first conductive line 106 may be connected to the third sub-conductive layer.
S204, as shown in fig. 18, the first conductive layer 101 is electrically connected to a first signal line 201, and the second conductive layer 102 is connected to the second signal line 202.
The electrically connecting the first conductive layer 101 to the first signal line 201 and the second conductive layer 102 to the second signal line 202 includes:
the first conductive layer 101 and the first signal line 201 are connected by a second wire 107, and the second conductive layer 102 and the second signal line 202 are connected by a third wire 108.
As shown in fig. 18 (a), the second conductive layer 102 is an integral whole, and the first conductive layer 101 includes: the first sub-conductive layer 1011 is connected to the first signal line 201 through a second conductive wire 107, and the second conductive layer 102 is connected to the second signal line 202 through a third conductive wire 108.
As shown in fig. 18 (b), the first conductive layer 101 is an integral whole, and the second conductive layer 102 includes: the first conductive layer 101 is connected to the first signal line 201 through a second conductive line 107, and the fourth sub-conductive layer 1022 is electrically connected to the second signal line 202 through a third conductive line 108.
Therefore, the impedance matching is realized by directly forming the film resistor on the laser carrier, and meanwhile, the film resistor occupies small space and is simple in process and beneficial to large-scale production.
The embodiment of the application also provides an optical transmission assembly which comprises the laser module. The film resistor on the laser carrier is directly formed on the carrier, the occupied space is small, the process is simple, the cost of the whole light emitting assembly is reduced, and the output power of a laser chip is improved.
The embodiment of the application also provides an optical module, which comprises the light emitting assembly. The film resistor on the laser carrier is directly formed on the carrier, the occupied space is small, the process is simple, the cost of the whole optical module is reduced, and the output power of a laser chip is improved.
The above description is only an embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions within the technical scope disclosed in the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (11)
1. A laser carrier, wherein the laser carrier is used for carrying a laser chip, and a first surface of the laser carrier is provided with:
a first conductive layer electrically connected with the first signal line;
the second conducting layer is electrically connected with a second signal wire and is arranged at intervals with the first conducting layer, wherein the laser chip is arranged on the first conducting layer and is electrically connected with the second conducting layer;
a thin film resistor formed on the first surface of the laser carrier and electrically connected to the laser chip through the first conductive layer or the second conductive layer.
2. The laser carrier of claim 1, wherein the first conductive layer comprises: the first sub-conducting layer is electrically connected with the first signal line, and the second sub-conducting layer is provided with the laser chip;
the thin film resistor is arranged in a gap between the first sub-conductive layer and the second sub-conductive layer, one end of the thin film resistor is connected with the first sub-conductive layer, and the other end of the thin film resistor is connected with the second sub-conductive layer.
3. The laser carrier of claim 1, wherein the second conductive layer comprises: the third sub-conducting layer and the fourth sub-conducting layer are arranged at intervals, the third sub-conducting layer is electrically connected with the laser chip, and the fourth sub-conducting layer is electrically connected with the second signal line;
the thin film resistor is arranged in a gap between the third sub-conductive layer and the fourth sub-conductive layer, one end of the thin film resistor is connected with the third sub-conductive layer, and the other end of the thin film resistor is connected with the fourth sub-conductive layer.
4. The laser carrier according to any of claims 1-3, wherein the laser chip is electrically connected to the second electrically conductive layer by a first wire.
5. The laser carrier according to any of claims 1-4, wherein the laser chip is solder connected to the first electrically conductive layer by means of solder.
6. The laser carrier according to any of claims 1-5, wherein the first conductive layer is connected to the first signal line by a second wire, and the second conductive layer is connected to the second signal line by a third wire.
7. The laser carrier according to any of claims 1-6, wherein the first signal line and the second signal line are disposed on a circuit board.
8. The laser carrier according to any of claims 1-7, wherein the thin film resistor is formed on the laser carrier by means of electroplating.
9. A method of fabricating a laser carrier, the method comprising:
forming a first conductive layer, a second conductive layer and a thin film resistor on a first surface of a laser carrier, wherein the first conductive layer and the second conductive layer are arranged at intervals; the laser carrier is used for bearing a laser chip, and the thin film resistor is electrically connected with the laser chip through the first conducting layer or the second conducting layer.
10. The method of claim 9, wherein the first conductive layer comprises a first sub-conductive layer and a second sub-conductive layer which are spaced apart from each other, and the forming the first conductive layer, the second conductive layer and the thin film resistor on the first surface of the laser carrier comprises:
forming the thin film resistor on a first surface of the laser carrier;
and forming the first sub-conductive layer, the second sub-conductive layer and the second conductive layer on the first surface of the laser carrier, so that one end of the thin film resistor is connected with the first sub-conductive layer, and the other end of the thin film resistor is connected with the second sub-conductive layer.
11. The method of claim 9, wherein the second conductive layer comprises a third sub-conductive layer and a fourth sub-conductive layer which are spaced apart from each other, and the forming the first conductive layer, the second conductive layer and the thin film resistor on the first surface of the laser carrier comprises:
forming the thin film resistor on a first surface of the laser carrier;
and forming the first conductive layer, the third sub-conductive layer and the fourth sub-conductive layer on the first surface of the laser carrier, so that one end of the thin film resistor is connected with the third sub-conductive layer, and the other end of the thin film resistor is connected with the fourth sub-conductive layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110097958.7A CN114792928A (en) | 2021-01-25 | 2021-01-25 | Laser carrier and manufacturing method thereof |
| PCT/CN2021/141687 WO2022156489A1 (en) | 2021-01-25 | 2021-12-27 | Laser carrier and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202110097958.7A CN114792928A (en) | 2021-01-25 | 2021-01-25 | Laser carrier and manufacturing method thereof |
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| CN114792928A true CN114792928A (en) | 2022-07-26 |
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| CN202110097958.7A Pending CN114792928A (en) | 2021-01-25 | 2021-01-25 | Laser carrier and manufacturing method thereof |
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| WO (1) | WO2022156489A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4937660A (en) * | 1988-12-21 | 1990-06-26 | At&T Bell Laboratories | Silicon-based mounting structure for semiconductor optical devices |
| DE59901985D1 (en) * | 1998-05-26 | 2002-08-14 | Infineon Technologies Ag | High-frequency laser module and method for producing the same |
| JP4856465B2 (en) * | 2006-04-19 | 2012-01-18 | 日本オプネクスト株式会社 | Optical semiconductor element mounting substrate and optical transmission module |
| CN201904535U (en) * | 2010-12-28 | 2011-07-20 | 厦门三优光机电科技开发有限公司 | Novel ceramic sheet used for TO packaging of 10G laser |
| CN106229809A (en) * | 2016-09-20 | 2016-12-14 | 大连艾科科技开发有限公司 | Chip carrier for semiconductor laser |
| CN106549299B (en) * | 2016-10-24 | 2019-03-01 | 中国科学院半导体研究所 | It is a kind of for directly modulating the subcarrier encapsulating structure of chip of laser |
| CN206432554U (en) * | 2016-12-29 | 2017-08-22 | 东莞光智通讯科技有限公司 | Ceramic gasket and laser for laser |
| CN209266840U (en) * | 2018-11-07 | 2019-08-16 | 深圳市聚飞光电股份有限公司 | A kind of laser carrier and laser |
| CN112202046B (en) * | 2020-08-28 | 2022-06-28 | 武汉联特科技股份有限公司 | Novel TO packaging structure |
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- 2021-01-25 CN CN202110097958.7A patent/CN114792928A/en active Pending
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