CN114744065A - Non-contact photoetching method for mesa structure chip - Google Patents
Non-contact photoetching method for mesa structure chip Download PDFInfo
- Publication number
- CN114744065A CN114744065A CN202210289083.5A CN202210289083A CN114744065A CN 114744065 A CN114744065 A CN 114744065A CN 202210289083 A CN202210289083 A CN 202210289083A CN 114744065 A CN114744065 A CN 114744065A
- Authority
- CN
- China
- Prior art keywords
- chip
- photoresist
- shielding structure
- mesa
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000001259 photo etching Methods 0.000 title claims abstract description 37
- 230000008569 process Effects 0.000 claims abstract description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims description 58
- 239000002184 metal Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 8
- 238000002508 contact lithography Methods 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 2
- 230000008901 benefit Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 230000035764 nutrition Effects 0.000 description 1
- 235000016709 nutrition Nutrition 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a non-contact photoetching method of a mesa structure chip. The non-contact photoetching method of the mesa structure chip comprises the following steps: a shielding structure is arranged at a groove formed between any two mesa structures of the chip. The upper surface of the shielding structure is flush with the upper surface of the table-board structure. And carrying out a non-contact photoetching process on the chip provided with the shielding structure. By adopting the invention, the shielding structure is arranged at the groove formed between the table top structures, so that the exposure focal plane can be fixedly positioned on the upper surface of the table top structure when the photoetching machine automatically focuses, the problem of poor exposure quality caused by inaccurate exposure focal plane positioning in the non-contact photoetching process is solved, and the high-quality non-contact photoetching of the table top structure chip is realized.
Description
Technical Field
The invention relates to the technical field of chips, in particular to a non-contact photoetching method for a mesa structure chip.
Background
The infrared focal plane detection technology has the remarkable advantages of wide spectral response wave band, capability of obtaining more ground target information, capability of working day and night and the like, and is widely applied to the fields of agriculture and animal husbandry, investigation, development and management of forest resources, meteorological forecast, geothermal distribution, earthquake, volcanic activity, space astronomical detection and the like. The long-wave infrared detector of tellurium cadmium mercury is one of the representative products of infrared detection technology, and is the development direction of the new generation infrared detector.
The mercury cadmium telluride infrared detector can be divided into two types of a plane section and a mesa section according to the pn section configuration of the detector. As the pixel area array of the tellurium-cadmium-mercury infrared detector with the mesa structure is in a mesa structure, the focusing distortion phenomenon is easy to occur in the non-contact photoetching process, namely, because the area of the top layer of the mesa is close to the area of a groove between the mesas, the exposure focal plane is sometimes positioned at the top layer of the mesa and sometimes positioned at the bottom of the groove between the mesas in the automatic focusing process of the photoetching machine, as shown in figure 3. Since the non-contact exposure process needs to ensure that the focal plane of each exposure is fixed at the same position, the positioning change of the focal plane in the exposure process can greatly degrade the lithography quality and the exposure precision, and regional differences of the lithography quality occur, which affects the quality of the finished product of the detector, as shown in fig. 4.
Disclosure of Invention
The embodiment of the invention provides a non-contact photoetching method of a mesa structure chip, which is used for solving the problem that the focusing distortion phenomenon is easy to occur in the non-contact photoetching process in the prior art.
The non-contact photoetching method of the mesa structure chip according to the embodiment of the invention comprises the following steps:
arranging a shielding structure at a groove formed between any two table-board structures of the chip, wherein the upper surface of the shielding structure is flush with the upper surface of the table-board structure;
and carrying out a non-contact photoetching process on the chip provided with the shielding structure.
According to some embodiments of the invention, the disposing a shielding structure at a groove formed between any two mesa structures of the chip includes:
and filling photoresist in the groove, and arranging a metal film on the upper surface of the photoresist.
According to some embodiments of the present invention, filling a photoresist in the groove and disposing a metal film on an upper surface of the photoresist include:
coating photoresist on one side of the chip provided with the mesa structure;
growing a metal layer on one side of the chip coated with the photoresist;
arranging a photoresist pattern on one side of the chip where the metal layer grows to enable the metal layer above the mesa structure to leak;
removing the metal layer with the leakage by using a corrosion process;
and removing the photoresist pattern.
According to some embodiments of the invention, growing the metal layer on the side of the chip coated with the photoresist comprises:
a gold layer is grown on the side of the chip coated with photoresist.
According to some embodiments of the invention, the performing of the non-contact lithography process on the chip provided with the shielding structure includes:
coating photoresist on one side of the chip provided with the shielding structure;
and focusing the surface of the chip coated with the photoresist to expose by adopting a non-contact photoetching device.
According to some embodiments of the invention, the method further comprises:
after a non-contact photoetching process is carried out on the chip provided with the shielding structure, a target layer grows on one side of the chip provided with the shielding structure;
and removing the photoresist and the shielding structure on the chip.
By adopting the embodiment of the invention, the problem of poor exposure quality caused by inaccurate exposure focal plane positioning in the non-contact photoetching process can be solved, and the high-quality non-contact photoetching of the mesa structure chip is realized.
The above description is only an overview of the technical solutions of the present invention, and the present invention can be implemented in accordance with the content of the description so as to make the technical means of the present invention more clearly understood, and the above and other objects, features, and advantages of the present invention will be more clearly understood.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. In the drawings:
FIG. 1 is a schematic flow chart of a non-contact photolithography method for a mesa structure chip according to an embodiment of the present invention;
FIG. 2 is a flow chart of a non-contact photolithography method for a mesa chip according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a prior art non-contact photolithography method for mesa chips;
FIG. 4 is a diagram illustrating the effect of a non-contact photolithography method for a mesa chip in the prior art.
Detailed Description
Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention can be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Additionally, in some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
The embodiment of the invention provides a non-contact photoetching method for a mesa structure chip. The non-contact photoetching method of the mesa structure chip according to the embodiment of the invention comprises the following steps:
a shielding structure is arranged at a groove formed between any two mesa structures of the chip. The upper surface of the shielding structure is flush with the upper surface of the table-board structure.
And carrying out a non-contact photoetching process on the chip provided with the shielding structure.
It should be noted that the leveling is only substantially level and substantially level, and does not require complete leveling, so as to allow an error within a certain precision range, as long as it is ensured that the exposure focal plane can be fixedly positioned on the upper surface of the mesa structure when the lithography machine performs auto-focusing during the non-contact lithography process on the chip provided with the shielding structure.
By adopting the embodiment of the invention, the shielding structure is arranged at the groove formed between the table top structures, so that the exposure focal plane can be fixedly positioned on the upper surface of the table top structure when the photoetching machine automatically focuses, the problem of poor exposure quality caused by inaccurate positioning of the exposure focal plane in the non-contact photoetching process is solved, and the high-quality non-contact photoetching of the table top structure chip is realized.
On the basis of the above-described embodiment, various modified embodiments are further proposed, and it is to be noted herein that, in order to make the description brief, only the differences from the above-described embodiment are described in the various modified embodiments.
According to some embodiments of the invention, the disposing a shielding structure at a groove formed between any two mesa structures of the chip includes:
and filling photoresist in the groove, and arranging a metal film on the upper surface of the photoresist.
It will be appreciated that the photoresist and metal film in the recess are configured to form a masking structure.
By adopting the structure, when the shielding structure is removed subsequently, the metal film can be naturally separated only by removing the photoresist, so that the structure is convenient and trouble-saving, and the chip can not be damaged. The process of removing the photoresist is well-established in the related art and will not be described herein.
Referring to fig. 1, according to some embodiments of the present invention, filling a photoresist in the groove and disposing a metal film on an upper surface of the photoresist include:
coating photoresist on one side of the chip provided with the mesa structure;
growing a metal layer on one side of the chip coated with the photoresist;
arranging a photoresist pattern on one side of the chip where the metal layer grows to enable the metal layer above the mesa structure to leak;
removing the metal layer with the leakage by using a corrosion process;
and removing the photoresist pattern.
According to some embodiments of the invention, growing the metal layer on the side of the chip coated with the photoresist comprises:
a gold layer is grown on the side of the chip coated with photoresist.
According to some embodiments of the invention, the performing of the non-contact lithography process on the chip provided with the shielding structure includes:
coating photoresist on one side of the chip provided with the shielding structure;
and focusing the surface of the chip coated with the photoresist to expose by adopting a non-contact photoetching device.
It can be understood that the non-contact lithography equipment is adopted to focus on the surface of the chip provided with the shielding structure accurately, then exposure is completed, and a high-precision lithography pattern is prepared on the surface of the table board.
As shown in fig. 2, according to some embodiments of the invention, the method further comprises:
after a non-contact photoetching process is carried out on the chip provided with the shielding structure, photoetching patterns are formed, and a target layer grows on one side of the chip provided with the shielding structure by referring to the schematic diagram of the exposure and development steps shown in FIG. 2; the target layer can be any structural layer and can be set according to actual requirements, and the target layer is generally referred to herein.
And removing the photoresist and the metal shielding structure on the chip. The target layer on the photoresist layer is also removed. The structure not covered by the photoresist on the mesa is retained with the target layer, so that the high-precision target layer structure is prepared on the mesa, and the schematic diagram shown in fig. 2 after the photoresist and the metal shielding structure are removed is referred to.
The non-contact lithography method of the mesa-structured chip according to an embodiment of the present invention is described in detail in one specific embodiment with reference to fig. 1 to 2. It is to be understood that the following description is illustrative only and is not intended to be in any way limiting. All similar structures and similar variations thereof adopted by the invention are intended to fall within the scope of the invention.
As shown in fig. 1-2, the non-contact lithography method for a mesa structure chip according to an embodiment of the present invention includes:
the method comprises the following steps: coating photoresist on the surface of the mesa structure chip;
the surface of the mesa structure chip is coated with a first layer of photoresist, but the thickness of the photoresist needs to be equivalent to the height of the mesa structure, so that fluctuation of the mesa structure can be compensated by the photoresist, and because the thickness of the photoresist is larger and needs a certain amount of exposure dose, the exposure quality cannot be influenced by complete exposure of the photoresist even in a short white light area in a subsequent process.
Step two: growing a metal layer, such as an Au layer;
growing a layer on the surface of the first layer of photoresist
To
And taking Au with the thickness as a focusing focal plane, coating a second photoresist layer on the surface of the Au, exposing the upper surface area of the table top through exposure, then corroding and removing the exposed Au, and removing the second photoresist layer, so that the top layer of the table top and the Au layer are at a similar height.
Step three: coating photoresist on the surface of the metal layer again;
step four: exposing and developing the photoresist on the surface of the metal layer by using non-contact photoetching equipment to prepare a required graph structure;
step five: and growing a target layer on the surface with the photoetching pattern structure.
Step six: and removing the photoresist and the metal shielding structure on the chip. The target layer on the photoresist layer is also removed. The structure which is not covered by the photoresist on the table top is reserved with the target layer, so that the high-precision target layer structure is prepared on the table top.
The embodiment of the invention solves the problems that the exposure focal plane is sometimes positioned at the top layer of the table top and sometimes positioned at the bottom of the groove between the tables due to the change of the position of the exposure focal plane and the nutrition exposure quality when the photoetching machine automatically focuses in the non-contact photoetching process. The exposure focal plane is fixed by positioning the exposure focal plane at the top of the mesa structure, so that high-quality non-contact photoetching of the mesa structure chip is realized.
It should be noted that the above-mentioned embodiments are only preferred embodiments of the present invention, and are not intended to limit the present invention, and those skilled in the art can make various modifications and changes. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Reference to the description of the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," or the like, means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Although some embodiments described herein include some features included in other embodiments instead of others, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments. The particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. For example, in the claims, any of the claimed embodiments may be used in any combination.
Claims (6)
1. A non-contact photoetching method for a mesa structure chip is characterized by comprising the following steps:
arranging a shielding structure at a groove formed between any two table-board structures of the chip, wherein the upper surface of the shielding structure is flush with the upper surface of the table-board structure;
and carrying out a non-contact photoetching process on the chip provided with the shielding structure.
2. The method of claim 1, wherein disposing a masking structure at a recess formed between any two mesa structures of a chip comprises:
and filling photoresist in the groove, and arranging a metal film on the upper surface of the photoresist.
3. The method of claim 2, wherein filling the trench with a photoresist and disposing a metal film on an upper surface of the photoresist comprises:
coating photoresist on one side of the chip provided with the mesa structure;
growing a metal layer on one side of the chip coated with the photoresist;
arranging a photoresist pattern on one side of the chip where the metal layer grows to enable the metal layer above the mesa structure to leak;
removing the leaked metal layer by using a corrosion process;
and removing the photoresist pattern.
4. The method of claim 3, wherein growing a metal layer on one side of the photoresist-coated chip comprises:
a gold layer is grown on the side of the chip coated with photoresist.
5. The method of claim 1, wherein the performing of the non-contact lithography process on the chip provided with the shielding structure comprises:
coating photoresist on one side of the chip provided with the shielding structure;
and focusing on the surface of the chip coated with the photoresist by using a non-contact photoetching device to perform exposure.
6. The method of claim 1, wherein the method further comprises:
after a non-contact photoetching process is carried out on the chip provided with the shielding structure, a target layer grows on one side of the chip provided with the shielding structure;
and removing the photoresist and the metal shielding structure on the chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210289083.5A CN114744065B (en) | 2022-03-23 | 2022-03-23 | Non-contact photoetching method for mesa structure chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210289083.5A CN114744065B (en) | 2022-03-23 | 2022-03-23 | Non-contact photoetching method for mesa structure chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114744065A true CN114744065A (en) | 2022-07-12 |
| CN114744065B CN114744065B (en) | 2024-06-14 |
Family
ID=82277596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210289083.5A Active CN114744065B (en) | 2022-03-23 | 2022-03-23 | Non-contact photoetching method for mesa structure chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114744065B (en) |
Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07159969A (en) * | 1993-12-01 | 1995-06-23 | Hitachi Ltd | Phase shift mask and its production |
| CN1208248A (en) * | 1997-04-07 | 1999-02-17 | 科莱恩(法国)公司 | Mechanical-chemical polishing method for semiconductor or insulation material layer |
| JP2001350268A (en) * | 1995-02-20 | 2001-12-21 | Hitachi Ltd | Method for producing semiconductor device |
| US20040115923A1 (en) * | 2001-04-26 | 2004-06-17 | Macneil John | Method of filling a via or recess in a semiconductor substrate |
| KR20060072510A (en) * | 2004-12-23 | 2006-06-28 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device |
| US20080176045A1 (en) * | 2007-01-23 | 2008-07-24 | Guohong Zhang | Method of Mapping Lithography Focus Errors |
| EP1972998A1 (en) * | 2005-12-06 | 2008-09-24 | Nissan Chemical Industries, Ltd. | Silicon-containing resist underlying layer film forming composition for formation of photocrosslinking cured resist underlying layer film |
| CN101398579A (en) * | 2007-09-30 | 2009-04-01 | 中芯国际集成电路制造(上海)有限公司 | Method for making micro reflector layer and silicon based LCD |
| CN101459096A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method for wafer back flattening and method for enhancing wire width consistency of photo-etching process |
| CN102265217A (en) * | 2009-01-08 | 2011-11-30 | 国际商业机器公司 | Substrate planarization with imprint materials and processes |
| CN104237983A (en) * | 2014-09-30 | 2014-12-24 | 中国空空导弹研究院 | Method for efficiently producing high-precision multistep microlens array |
| CN104425216A (en) * | 2013-08-20 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | Method for photo-etching semiconductor substrate having trench |
| CN107660277A (en) * | 2015-04-13 | 2018-02-02 | 东京毅力科创株式会社 | System and method for being planarized to substrate |
| CN108735582A (en) * | 2018-04-09 | 2018-11-02 | 中国电子科技集团公司第十研究所 | A kind of preparation method of photoresist film |
| CN111176078A (en) * | 2020-02-20 | 2020-05-19 | 上海华力集成电路制造有限公司 | Method for correcting optical flatness detection result |
| CN111381454A (en) * | 2018-12-28 | 2020-07-07 | 科尼亚克有限公司 | Exposure method and lithographic apparatus |
| CN112230515A (en) * | 2020-10-26 | 2021-01-15 | 上海华力集成电路制造有限公司 | Method for optimizing photoetching focus |
| CN112666800A (en) * | 2020-12-31 | 2021-04-16 | 深圳市芯思杰联邦国际科技发展有限公司 | Photoetching method |
| WO2021188226A1 (en) * | 2020-03-17 | 2021-09-23 | Tokyo Electron Limited | Planarization of spin-on films |
-
2022
- 2022-03-23 CN CN202210289083.5A patent/CN114744065B/en active Active
Patent Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07159969A (en) * | 1993-12-01 | 1995-06-23 | Hitachi Ltd | Phase shift mask and its production |
| JP2001350268A (en) * | 1995-02-20 | 2001-12-21 | Hitachi Ltd | Method for producing semiconductor device |
| CN1208248A (en) * | 1997-04-07 | 1999-02-17 | 科莱恩(法国)公司 | Mechanical-chemical polishing method for semiconductor or insulation material layer |
| US20040115923A1 (en) * | 2001-04-26 | 2004-06-17 | Macneil John | Method of filling a via or recess in a semiconductor substrate |
| KR20060072510A (en) * | 2004-12-23 | 2006-06-28 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device |
| EP1972998A1 (en) * | 2005-12-06 | 2008-09-24 | Nissan Chemical Industries, Ltd. | Silicon-containing resist underlying layer film forming composition for formation of photocrosslinking cured resist underlying layer film |
| US20080176045A1 (en) * | 2007-01-23 | 2008-07-24 | Guohong Zhang | Method of Mapping Lithography Focus Errors |
| CN101398579A (en) * | 2007-09-30 | 2009-04-01 | 中芯国际集成电路制造(上海)有限公司 | Method for making micro reflector layer and silicon based LCD |
| CN101459096A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method for wafer back flattening and method for enhancing wire width consistency of photo-etching process |
| CN102265217A (en) * | 2009-01-08 | 2011-11-30 | 国际商业机器公司 | Substrate planarization with imprint materials and processes |
| CN104425216A (en) * | 2013-08-20 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | Method for photo-etching semiconductor substrate having trench |
| CN104237983A (en) * | 2014-09-30 | 2014-12-24 | 中国空空导弹研究院 | Method for efficiently producing high-precision multistep microlens array |
| CN107660277A (en) * | 2015-04-13 | 2018-02-02 | 东京毅力科创株式会社 | System and method for being planarized to substrate |
| CN108735582A (en) * | 2018-04-09 | 2018-11-02 | 中国电子科技集团公司第十研究所 | A kind of preparation method of photoresist film |
| CN111381454A (en) * | 2018-12-28 | 2020-07-07 | 科尼亚克有限公司 | Exposure method and lithographic apparatus |
| CN111176078A (en) * | 2020-02-20 | 2020-05-19 | 上海华力集成电路制造有限公司 | Method for correcting optical flatness detection result |
| WO2021188226A1 (en) * | 2020-03-17 | 2021-09-23 | Tokyo Electron Limited | Planarization of spin-on films |
| CN112230515A (en) * | 2020-10-26 | 2021-01-15 | 上海华力集成电路制造有限公司 | Method for optimizing photoetching focus |
| CN112666800A (en) * | 2020-12-31 | 2021-04-16 | 深圳市芯思杰联邦国际科技发展有限公司 | Photoetching method |
Non-Patent Citations (1)
| Title |
|---|
| 孙丽媛;高志远;邹德恕;张露;马莉;田亮;沈光地;: "多台阶器件结构深层表面光刻工艺优化", 物理学报, no. 20, 23 October 2012 (2012-10-23) * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114744065B (en) | 2024-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Andréasson et al. | Hydrological change–climate change impact simulations for Sweden | |
| CN102809876B (en) | Camera module and fabrication method thereof | |
| US20060146316A1 (en) | Method for monitoring micro-lens curvature in-line | |
| CN113013268A (en) | Small-pixel infrared focal plane detector based on super-surface lens | |
| CN105956545A (en) | Optical fingerprint recognition device forming method | |
| CN105870142A (en) | Forming method for optical fingerprint recognition device | |
| US4702592A (en) | Reticle assembly, system, and method for using the same | |
| CN114744065A (en) | Non-contact photoetching method for mesa structure chip | |
| CN211628000U (en) | Light shield | |
| CN104638053B (en) | Production method of grating electrode of solar cell | |
| CN101727014B (en) | Photoetching method for controlling characteristic dimension and photoetching system thereof | |
| CN104865789A (en) | Mask plate and photoetching method | |
| JPH0722109B2 (en) | Method for determining light exposure of photosensitive rack layer | |
| JP2678074B2 (en) | Method for manufacturing solid-state imaging device | |
| CN105116683A (en) | Calibrating method of optical proximity effect correction defocused model | |
| US20060290919A1 (en) | Method for testing the generation of scattered light by photolithographic imaging devices | |
| CN109656102A (en) | Photoetching efficiency-adjusted method, apparatus, server and computer readable storage medium | |
| CN109904245A (en) | Small spacing infrared detector crosstalk measuring transparent micropore structure and preparation method thereof | |
| US20060194129A1 (en) | Substrate edge focus compensation | |
| CN116721184B (en) | Drawing comprehensive method and system for maintaining regional characteristics | |
| CN1074165C (en) | Vernier | |
| KR100307529B1 (en) | A pattern for measuring a focus of light exposing apparatus and method for measuring the focus of light exposing apparatus using the pattern | |
| CN101866883B (en) | Manufacture method of CMOS (Complementary Metal Oxide Semiconductor) image sensor | |
| CN206921816U (en) | Semiconductor structure | |
| US9748420B2 (en) | High accuracy module assembly process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |