CN108735582A - A kind of preparation method of photoresist film - Google Patents
A kind of preparation method of photoresist film Download PDFInfo
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- CN108735582A CN108735582A CN201810309866.9A CN201810309866A CN108735582A CN 108735582 A CN108735582 A CN 108735582A CN 201810309866 A CN201810309866 A CN 201810309866A CN 108735582 A CN108735582 A CN 108735582A
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- photoresist film
- layer photoresist
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Abstract
The invention discloses a kind of preparation method of photoresist film, this method includes：A gluing is carried out on substrate, forms first layer photoresist film；First layer photoresist film is exposed entirely；Second glue spreading is carried out on first layer photoresist film, forms second layer photoresist film；Partial exposure is carried out to second layer photoresist film according to litho pattern；Development is carried out at the same time to first layer photoresist film and second layer photoresist film.The present invention is on the basis of original first layer photoresist film, the making of second layer photoresist film is carried out using same technique, the photoresist of particular community need not be selected, there is no the purchase of new material, development problems, only increase processing step, development difficulty is relatively low, and strong applicability, solve manufacture class inverted trapezoidal photoresist film in the prior art method cost of manufacture that may be present is higher, technology difficulty is larger, in some instances it may even be possible to influence operating personnel's safety or device performance caused the technical problems such as to decline.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of preparation method of photoresist film.
Background technology
There are metal structures to prepare demand in semiconductor chip fabrication process, and stripping technology, which is that one kind is widely applied, partly leads
Process implementation method prepared by body device metal structure.In the prior art, the process flow diagram of common stripping technology is such as
Shown in Fig. 1, specifically includes and cleaned wafer surface is passed through into the techniques stream such as the gluing of photoetching process, front baking, exposure, development
Journey, by metal structure graph copying to be grown to substrate material surface in the form of photoresist film；By the works such as sputtering, evaporating
Metallic diaphragm is deposited on substrate material surface by skill mode；It will impregnate in organic solvent, lead to the substrate of adhesive tape metallic diaphragm
It crosses that photoetching is peptized and cleaning process flow, the metallic diaphragm on photoresist surface is taken away into substrate surface, realizes metal structure
It prepares.
In the production line in general photoetching process, positive photoresist because its high resolution, shape-retaining ability is good the features such as become
A kind of common photoresist type irradiates positive-tone photo glued membrane by uv-exposure, contacts the region of illumination in a lithographic process
It chemically reacts, is dissolved in developer solution in later stage developing process, developer solution is not dissolved in not in contact with the region of light irradiation, to real
The preparation of existing specific litho pattern.In uv-exposure, from photoresist film surface to photoresist film bottom, under light energy is gradual
Drop makes the solvability of bottom photoresist film be less than the solvability on photoresist film surface, thus easily formed after developing it is vertical or
Gentle slope shape photoresist film side wall, the sidewall profile easily cause deposit of the metallic film in side wall, as shown in Fig. 2, since metal is deposited
The metallic diaphragm of photoresist film side wall easily remains in substrate surface and is not easy to remove in ductility, stripping, increases metal-stripping
Difficulty influences progress and the reliability of device performance of late stage process.
It is handled by photoetching process, realizes prepared by up-narrow and down-wide photoetching development opening and class inverted trapezoidal photoresist film, it can
To reduce metal lift-off material difficulty, stripping quality is improved.Current existing inverted trapezoidal photoresist film technology of preparing has immersion chlorine
Benzene method, immersion dimethylbenzene method, E-beam lithography, litho pattern reversal process, multilevel resist method, auxiliary layer method, negtive photoresist method etc..
Wherein, chlorobenzene, dimethylbenzene have a chemical toxicity to human body, impregnate chlorobenzene method, impregnate dimethylbenzene method to environment and operating personnel's safety,
Health is potentially dangerous, while this method is not all effective to all positive photoresists；Electron beam lithography machine is expensive,
Therefore E-beam lithography is of high cost, is not suitable for being introduced into production line；Reversal pattern method precision controlling is difficult, resolution ratio by
Limit, poor adhesion, reversion are difficult to dissolve removal after interlinking, and increase technology difficulty；Multilevel resist method proposes the selection of photoresist
Requirement is gone out；Auxiliary layer method increases the processing steps such as the etching of auxiliary layer, improves complexity, causes potential stress and device
The problem of part performance declines；Negtive photoresist method makes the application range of negtive photoresist because of negtive photoresist poor heat resistance, the easily attribute questions such as expansion, softening
It is limited.
Invention content
The present invention provides a kind of preparation method of photoresist film, to solve to manufacture class inverted trapezoidal photoresist in the prior art
The method cost of manufacture that may be present of film is higher, technology difficulty is larger, in some instances it may even be possible to influence operating personnel's safety or lead to device
The technical problems such as part performance decline.
In order to solve the above technical problems, on the one hand, the present invention provides a kind of preparation method of photoresist film, including：In base
On piece carries out a gluing, forms first layer photoresist film；The first layer photoresist film is exposed entirely；Described first
Second glue spreading is carried out on layer photoresist film, forms second layer photoresist film；According to litho pattern to the second layer photoresist film
Carry out Partial exposure；Development is carried out at the same time to the first layer photoresist film and the second layer photoresist film.
Further, a gluing is carried out on substrate, is formed before first layer photoresist film, is further included：To the substrate
It is cleaned.
Further, before to the first layer photoresist film expose entirely, further include：To the first layer photoresist film
Carry out front baking operation.
Further, before carrying out Partial exposure to the second layer photoresist film according to litho pattern, further include：To described
Second layer photoresist film carries out front baking operation.
Further, it after being carried out at the same time development to the first layer photoresist film and the second layer photoresist film, also wraps
It includes：In the enterprising row metal deposit of the second layer photoresist film to form metallic diaphragm；By the substrate, the first layer photoetching
Glued membrane and the second layer photoresist film are dipped in organic solvent simultaneously, the case where the metallic diaphragm large area tilts
Under, metal-stripping is carried out, obtains depositing metal film on the substrate.
Further, the thickness of the first layer photoresist film is at least 1.5 times of the thickness of the metallic diaphragm.
The present invention is based on the coating processes of existing single-layer lithography glued membrane, on the basis of original first layer photoresist film
On, the making that same technique carries out second layer photoresist film is reused, the photoresist of particular community need not be selected, be not present
The purchase of new material, development problem, it is only necessary to increase processing step, development difficulty is relatively low, and photoresist film proposed by the present invention
Preparation method technique strong applicability solves the method making that may be present for manufacturing class inverted trapezoidal photoresist film in the prior art
Cost is higher, technology difficulty is larger, in some instances it may even be possible to influence operating personnel's safety or lead to the technical problems such as device performance decline.
Description of the drawings
Fig. 1 is the process flow diagram of stripping technology in the prior art；
Fig. 2 is Metal deposition in photoresist film side wall schematic diagram；
Fig. 3 is the preparation method flow chart of photoresist film in the preferred embodiment of the present invention；
Fig. 4 is second glue spreading effect diagram in the preferred embodiment of the present invention；
Fig. 5 is development effect schematic diagram in the preferred embodiment of the present invention；
Fig. 6 is Metal deposition effect sectional view in the preferred embodiment of the present invention；
Fig. 7 is metal-stripping meron sectional view in the preferred embodiment of the present invention.
Specific implementation mode
In order to solve the prior art manufacture class inverted trapezoidal photoresist film method cost of manufacture that may be present is higher, technique
Difficulty is larger, in some instances it may even be possible to influence operating personnel's safety or lead to the technical problems such as device performance decline, the present invention provides one
The preparation method of kind photoresist film, below in conjunction with attached drawing and embodiment, the present invention will be described in further detail.It should manage
Solution, the specific embodiments described herein are merely illustrative of the present invention, does not limit the present invention.
The preferred embodiment of the present invention provides a kind of preparation method of photoresist film, and flow chart is as shown in figure 3, specific
Including step S1 to S5：
S1 carries out a gluing on substrate, forms first layer photoresist film；
S2 exposes first layer photoresist film entirely；
S3 carries out second glue spreading on first layer photoresist film, forms second layer photoresist film；
S4 carries out Partial exposure according to litho pattern to second layer photoresist film；
S5 is carried out at the same time development to first layer photoresist film and second layer photoresist film.
An only layer photoresist film in the existing preparation method for making photoresist film, and the photoresist that the present embodiment is provided
In membrane preparation method, on the basis of original first layer photoresist film, second glue spreading is carried out, has formd the second layer photoresist
Film, as shown in figure 4, carrying out portraying for photoengraving pattern to be prepared on second layer photoresist film；Also, for the first layer photoresist
Film has carried out full exposing operation in exposure, so that first layer photoresist film is completely dissolved in developer solution, for second layer photoetching
Glued membrane carries out Partial exposure, is only exposed to the photoengraving pattern part to be prepared after portraying, it is made to be partially soluble in developer solution；
Finally first layer photoresist film and second layer photoresist film are put into developer solution simultaneously and carry out development operation, due to second layer light
Photoresist film is covered on first layer photoresist film, and the part that second layer photoresist film is exposed is dissolved in developer solution first,
And the first layer photoresist film being exposed can be also dissolved in developer solution.Further, developer solution can not only remove photoetching
The photoresist of window can also realize the lateral undercutting of first layer photoresist film, it is easy to accomplish narrow on photoetching window in photoetching window
Lower wide development effect, as shown in Figure 5.But it should be noted that in the time that should actually control development operation, make first layer
Photoresist film is unlikely to lead to whole dissolvings due to long soaking time in developer solution.
Preferably, it can also include the steps that being cleaned to substrate before carrying out a gluing on substrate, ensure base
The cleaning and drying of piece, allow first layer photoresist film to be preferably attached on substrate；Also, to first layer photoresist film
Before being exposed with second layer photoresist film, front baking operation is carried out to first layer photoresist film and second layer photoresist film respectively,
Evaporate the organic solvent in photoresist film, increase first layer photoresist film and substrate adhesiveness and first layer photoresist film and
Adhesiveness between second layer photoresist film.
After the completion of prepared by photoresist film, metal-stripping is carried out using obtained photoresist film.First in the second layer photoresist
Film surface carries out Metal deposition to form metallic diaphragm, and specific Metal deposition mode can be the technology modes such as sputtering, evaporation,
Metallic diaphragm is deposited on second layer photoresist film surface, due to photoresist film according to photoengraving pattern by partial corrosion, fall in quilt
The molten metal of erodable section is attached on substrate, forms actually required metal film pattern, sectional view is as shown in Figure 6；Gold
After category has deposited, substrate is immersed in together with the first layer photoresist film and second layer photoresist film adhered to thereon organic molten
In agent, since photoresist film is dissolved in organic solvent, the metallic diaphragm being attached on photoresist film can be caused to tilt, or with photoresist
The dissolving of film and fall off, at this time carry out metal-stripping operation, the metallic diaphragm for tilting or falling off is taken out from organic solution, is made
Be kept completely separate with substrate, can finally obtain the metal film being attached on substrate, and the pattern of the metal film is required light
Needle drawing case, sectional view are as shown in Figure 7.
Preferably, when carrying out a gluing, it shall be guaranteed that the thickness of first layer photoresist film is at least gold to be deposited
Belong to 1.5 times of the thickness of film layer, the separating effect to ensure the metallic diaphragm deposited and photoresist film is more preferable.
Coating processes of the present embodiment based on existing single-layer lithography glued membrane, on the basis of original first layer photoresist film
On, the making that same technique carries out second layer photoresist film is reused, the photoresist of particular community need not be selected, be not present
The purchase of new material, development problem, it is only necessary to increase processing step, development difficulty is relatively low, and the photoresist film that the present embodiment proposes
Preparation method technique strong applicability, solve in the prior art manufacture class inverted trapezoidal photoresist film method system that may be present
Make that cost is higher, technology difficulty is larger, in some instances it may even be possible to influence operating personnel's safety or device performance is caused the technical problems such as to decline.
Realize effect on, first layer photoresist film for realizing up-narrow and down-wide development effect preparation, second layer photoresist film be responsible for
Line width, photoetching window pattern are controlled, since there is no developing process step is crossed, photoresist will not be because excessively developing for a long time
Existing photoresist swelling set denaturing problem is impregnated, may further ensure that litho pattern pattern.
Although being example purpose, the preferred embodiment of the present invention is had been disclosed for, those skilled in the art will recognize
Various improvement, increase and substitution are also possible, and therefore, the scope of the present invention should be not limited to the above embodiments.
Claims (6)
1. a kind of preparation method of photoresist film, which is characterized in that including：
A gluing is carried out on substrate, forms first layer photoresist film；
The first layer photoresist film is exposed entirely；
Second glue spreading is carried out on the first layer photoresist film, forms second layer photoresist film；
Partial exposure is carried out to the second layer photoresist film according to litho pattern；
Development is carried out at the same time to the first layer photoresist film and the second layer photoresist film.
2. preparation method as described in claim 1, which is characterized in that carry out a gluing on substrate, form first layer light
Before photoresist film, further include：
The substrate is cleaned.
3. preparation method as described in claim 1, which is characterized in that exposed it entirely to the first layer photoresist film
Before, further include：
Front baking operation is carried out to the first layer photoresist film.
4. preparation method as described in claim 1, which is characterized in that according to litho pattern to the second layer photoresist film into
Before row Partial exposure, further include：
Front baking operation is carried out to the second layer photoresist film.
5. preparation method according to any one of claims 1 to 4, which is characterized in that the first layer photoresist film and
The second layer photoresist film is carried out at the same time after development, further includes：
In the enterprising row metal deposit of the second layer photoresist film to form metallic diaphragm；
The substrate, the first layer photoresist film and the second layer photoresist film are dipped in organic solvent simultaneously,
In the case that the metallic diaphragm large area tilts, metal-stripping is carried out, obtains depositing metal film on the substrate.
6. preparation method as claimed in claim 5, which is characterized in that the thickness of the first layer photoresist film is at least described
1.5 times of the thickness of metallic diaphragm.
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| CN201810309866.9A CN108735582A (en) | 2018-04-09 | 2018-04-09 | A kind of preparation method of photoresist film |
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| CN201810309866.9A CN108735582A (en) | 2018-04-09 | 2018-04-09 | A kind of preparation method of photoresist film |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113075868A (en) * | 2020-01-06 | 2021-07-06 | 芯恩（青岛）集成电路有限公司 | Photoresist patterning method and double-layer photoresist stripping method |
| CN113816335A (en) * | 2021-09-23 | 2021-12-21 | 华东光电集成器件研究所 | Metal stripping preparation method of silicon-based wafer double-layer photoresist |
| CN114744065A (en) * | 2022-03-23 | 2022-07-12 | 中国电子科技集团公司第十一研究所 | Non-contact photoetching method for mesa structure chip |
| JP2022545050A (en) * | 2020-07-23 | 2022-10-25 | ▲騰▼▲訊▼科技（深▲セン▼）有限公司 | Photoresist structures, patterned deposited layers and semiconductor chips and methods for making them |
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| JPH0973092A (en) * | 1995-06-26 | 1997-03-18 | Nikon Corp | Spacer and optical element formed by using this spacer and its production |
| US6592443B1 (en) * | 2000-08-30 | 2003-07-15 | Micron Technology, Inc. | Method and apparatus for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113075868A (en) * | 2020-01-06 | 2021-07-06 | 芯恩（青岛）集成电路有限公司 | Photoresist patterning method and double-layer photoresist stripping method |
| JP2022545050A (en) * | 2020-07-23 | 2022-10-25 | ▲騰▼▲訊▼科技（深▲セン▼）有限公司 | Photoresist structures, patterned deposited layers and semiconductor chips and methods for making them |
| JP7282440B2 (en) | 2020-07-23 | 2023-05-29 | ▲騰▼▲訊▼科技（深▲セン▼）有限公司 | Photoresist structures, patterned deposited layers and semiconductor chips and methods for making them |
| CN113816335A (en) * | 2021-09-23 | 2021-12-21 | 华东光电集成器件研究所 | Metal stripping preparation method of silicon-based wafer double-layer photoresist |
| CN114744065A (en) * | 2022-03-23 | 2022-07-12 | 中国电子科技集团公司第十一研究所 | Non-contact photoetching method for mesa structure chip |
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Application publication date: 20181102 |
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