CN114743944A - Module diode and manufacturing method thereof - Google Patents
Module diode and manufacturing method thereof Download PDFInfo
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- CN114743944A CN114743944A CN202210638080.8A CN202210638080A CN114743944A CN 114743944 A CN114743944 A CN 114743944A CN 202210638080 A CN202210638080 A CN 202210638080A CN 114743944 A CN114743944 A CN 114743944A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000004033 plastic Substances 0.000 claims abstract description 44
- 238000004080 punching Methods 0.000 claims description 21
- 238000003466 welding Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 238000005452 bending Methods 0.000 claims description 7
- 239000002991 molded plastic Substances 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000012459 cleaning agent Substances 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 239000000047 product Substances 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 238000012216 screening Methods 0.000 claims description 3
- 239000011265 semifinished product Substances 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4878—Mechanical treatment, e.g. deforming
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention relates to the technical field of diodes, in particular to a modular diode, which comprises a plastic package body, wherein a chip main body is arranged in the plastic package body, and the chip main body is connected with an anode bottom plate and a cathode bottom plate; one end of the anode bottom plate is provided with an anode connecting part, the other end of the anode bottom plate is provided with an anode pin, and the anode connecting part is connected with one surface of the chip main body; one end of the negative electrode bottom plate is provided with a negative electrode connecting part, the other end of the negative electrode bottom plate is provided with a negative electrode pin, and the negative electrode connecting part is connected with the other surface of the chip; the positive electrode connecting part and the negative electrode connecting part are welded with the chip, the positive electrode base plate is used for removing the part of the positive electrode pin, the negative electrode base plate is used for removing the part of the negative electrode pin, and the chip main body is arranged in the plastic package body. The invention has simple production process, good connection stability and good integral electrical property of the module diode.
Description
Technical Field
The invention relates to the technical field of diodes, in particular to a module diode and a manufacturing method thereof.
Background
Diodes are electronic devices made of semiconductor materials (silicon, selenium, germanium, etc.) that have unidirectional electrical conductivity. The conventional structure is as shown in fig. 1 below, and comprises a positive base plate, a negative base plate, a chip main body and a jumper wire, wherein the chip main body is welded on the positive base plate, and the chip main body is connected with the negative base plate through the jumper wire. The conventional welding structure uses jumper wires to cause complex production procedures and unstable performance.
With the increase of the market demand on the high-current photovoltaic junction box, the common axial diode cannot meet the high-current demand, so that the module diode is used for replacing the axial diode, but the jumper wire welding involved in the process has high requirement on the welding process, and the integral electrical property of the diode is adversely affected by the jumper wire welding.
Disclosure of Invention
The invention aims to solve the defects of the prior art and provides a module diode and a manufacturing method thereof.
The invention provides the following technical scheme:
a module diode comprises a plastic package body, wherein a chip main body is arranged in the plastic package body, and the chip main body is connected with an anode bottom plate and a cathode bottom plate;
one end of the positive base plate is provided with a positive connecting part, the other end of the positive base plate is provided with a positive pin, and the positive connecting part is connected with one surface of the chip main body;
one end of the negative electrode bottom plate is provided with a negative electrode connecting part, the other end of the negative electrode bottom plate is provided with a negative electrode pin, and the negative electrode connecting part is connected with the other surface of the chip;
the positive electrode connecting part and the negative electrode connecting part are all welded with the chip, the positive electrode bottom plate is used for removing the part of the positive electrode pin, the negative electrode bottom plate is used for removing the part of the negative electrode pin, and the chip main body is arranged in the plastic package body.
Preferably, the cross section of the plastic package body is of an i-shaped structure, the plastic package body comprises an upper plastic package body and a lower plastic package body, the end part of the negative electrode bottom plate, which is provided with the negative electrode connecting part, is a first negative electrode connecting plate, and a second negative electrode connecting plate is connected between the negative electrode pin and the first negative electrode connecting plate.
Preferably, the positive pole connecting portion with the negative pole connecting portion are punching press lug structure, the convex surface end of the punching press lug of positive pole connecting portion and a surface welded connection of chip main part, the convex end face of the punching press lug of negative pole connecting portion and another surface welded connection of chip main part, the last plastic envelope of plastic envelope body will with the lower plastic envelope the positive pole bottom plate with the negative pole bottom plate centre gripping is fixed.
Preferably, the positive base plate is a straight plate structure, the negative base plate is a bending structure, the negative base plate comprises a second negative connecting plate, the second negative connecting plate is provided with two bending parts, the second negative connecting plate is provided with two parts, the second negative connecting plate, the negative pin and the first negative connecting plate form a bus bar mounting hole, the positive base plate is provided with a bus bar mounting hole, and the bus bar mounting hole is matched with the notches at the two ends of the plastic package body.
Preferably, the positive base plate comprises a positive pin, a positive intermediate connecting plate and a first positive connecting plate, and the negative base plate comprises a negative pin, a negative intermediate connecting plate and a third negative connecting plate.
Preferably, the positive electrode bottom plate and the negative electrode bottom plate are symmetrically arranged around the chip main body, or the positive electrode bottom plate and the negative electrode bottom plate are symmetrically arranged around the center of the chip main body.
Preferably, the positive intermediate connecting plate is a second positive connecting plate, the positive connecting part is arranged on the first positive connecting plate, the second positive connecting plate is perpendicular to the first positive connecting plate, the second positive connecting plate and the positive connecting part are positioned on two sides of the first positive connecting plate, the positive pin is perpendicular to the second positive connecting plate, and the positive pin and the first positive connecting plate are positioned on the same side of the second positive connecting plate;
the negative electrode middle connecting plate is a fourth negative electrode connecting plate, the negative electrode connecting part is arranged on the third negative electrode connecting plate, the fourth negative electrode connecting plate is perpendicular to the third negative electrode connecting plate and is connected and arranged, the fourth negative electrode connecting plate and the negative electrode connecting part are located on two sides of the third negative electrode connecting plate, the negative electrode pin is perpendicular to the fourth negative electrode connecting plate, and the negative electrode pin and the third negative electrode connecting plate are located on the same side of the fourth negative electrode connecting plate.
Preferably, a first positive connecting plate of the positive base plate and a third negative connecting plate of the negative base plate are both of a bent structure, the first positive connecting plate is connected with a positive connecting vertical plate, the positive connecting vertical plate is perpendicular to the first positive connecting plate, the positive connecting vertical plate is connected with a third positive connecting plate, the third positive connecting plate is parallel to the first positive connecting plate, and the third positive connecting plate is perpendicular to the second positive connecting plate;
the third negative pole connecting plate is connected with negative pole connection riser, just negative pole connection riser perpendicular to the third negative pole connecting plate, the negative pole connection riser is connected with fifth negative pole connecting plate, fifth negative pole connecting plate with the third negative pole connecting plate is parallel to each other, fifth negative pole connecting plate perpendicular to the fourth negative pole connecting plate sets up.
Preferably, the positive electrode bottom plate and the negative electrode bottom plate are both of a bent structure, a positive electrode intermediate connecting plate is connected between the positive electrode pin and the first positive electrode connecting plate, the positive electrode intermediate connecting plate comprises a fourth positive electrode connecting plate and a fifth positive electrode connecting plate, the fourth positive electrode connecting plate is vertically arranged and connected with the positive electrode pin, the fifth positive electrode connecting plate is vertically arranged and connected with the first positive electrode connecting plate, the positive electrode pin is parallel to the fifth positive electrode connecting plate, and the first positive electrode connecting plate is parallel to the fourth positive electrode connecting plate;
the negative electrode connecting plate comprises a sixth negative electrode connecting plate and a seventh negative electrode connecting plate, the sixth negative electrode connecting plate is vertically connected with the seventh negative electrode connecting plate, the sixth negative electrode connecting plate is perpendicular to the negative electrode pins, the seventh negative electrode connecting plate is perpendicular to the third negative electrode connecting plate, the negative electrode pins are parallel to the seventh negative electrode connecting plate, and the third negative electrode connecting plate is parallel to the sixth negative electrode connecting plate.
A manufacturing method of a preferred module diode is as follows:
s1, cutting the raw material plates of the anode bottom plate and the cathode bottom plate, punching the specification plates, punching the protruding parts at the ends of the specification plates, and punching the ends of the plates provided with the punching bumps to adapt to plastic package in different modes;
s2, heating the soldering lug to enable the surface of the chip main body to be respectively connected with the positive electrode connecting part and the negative electrode connecting part in a welding mode;
s3, removing surface impurities of the welded semi-finished product by using a cleaning agent;
s4, performing mould pressing operation on the end part of the plate connected with the chip main body, and wrapping the tube core by the plastic package material to isolate the tube core from the external environment;
s5, carrying out high-temperature treatment on the molded plastic package material, baking to evaporate oil stains on the surface of the molded plastic package material at high temperature, and screening out effective finished products;
s6, bending the plate outside the plastic package body;
s7, electroplating the pin of the diode, and forming a tin layer on the surface of the pin to improve the solderability and the protection performance of the pin.
The beneficial effects of the invention are:
the electrode bottom plate of the module diode is stamped to form a stamping lug which is convenient to weld with the chip main body, and the bottom plate part of the mould pressing part is folded, so that the electrical property stability of the diode is provided, and the heat dissipation effect of the chip is improved;
simultaneously through the inefficacy risks such as rosin joint, empty solder joint of punching press lug reduction with the chip main part to and the variety of diode equipment has been improved. The bus bar is convenient to be directly welded with the photovoltaic module.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of a modular diode according to the prior art;
FIG. 2 is a schematic view of the present invention;
FIG. 3 is a schematic view of the internal structure of FIG. 2;
FIG. 4 is a second schematic structural diagram of the present invention;
FIG. 5 is a schematic view of the internal structure of FIG. 4;
FIG. 6 is a third schematic view of the present invention;
FIG. 7 is a schematic view of the internal structure of FIG. 6;
FIG. 8 is a fourth schematic view of the present invention;
FIG. 9 is a schematic view of the internal structure of FIG. 8;
FIG. 10 is a fifth schematic view of the present invention;
FIG. 11 is a schematic view of the internal structure of FIG. 10;
labeled in the figure as:
1-plastic packaging body;
2-positive bottom plate, 21-positive pin, 22-positive connecting part, 23-positive intermediate connecting plate, 231-first positive connecting plate, 232-second positive connecting plate, 233-third positive connecting plate, 234-positive connecting vertical plate, 235-fourth positive connecting plate, 236-fifth positive connecting plate;
3-negative base plate, 31-negative pin, 32-negative connection part, 33-first negative connection plate, 34-second negative connection plate, 35-negative intermediate connection plate, 351-third negative connection plate, 352-fourth negative connection plate, 353-fifth negative connection plate, 354-negative connection vertical plate, 355-sixth negative connection plate, 356-seventh negative connection plate; 4-bus bar mounting holes;
5-a chip body;
6-lead wire.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Example 1:
referring to fig. 2 and 3, a modular diode includes a plastic package body 1, a chip main body 5 is disposed in the plastic package body 1, and the chip main body 5 is connected to a positive electrode substrate 2 and a negative electrode substrate 3.
One end of the anode base plate 2 is provided with an anode connecting part 22, the other end of the anode base plate 2 is provided with an anode pin 21, and the anode connecting part 22 is connected with one surface of the chip main body 5.
One end of the negative electrode base plate 3 is provided with a negative electrode connecting part 32, the other end of the negative electrode base plate 3 is provided with a negative electrode pin 31, and the negative electrode connecting part 32 is connected with the other surface of the chip.
The positive electrode connecting part 22 and the negative electrode connecting part 32 are welded with the chip, and the part of the positive electrode base plate 2 except the positive electrode pin 21, the part of the negative electrode base plate 3 except the negative electrode pin 31 and the chip main body 5 are arranged in the plastic package body 1.
The plastic package body 1 has an i-shaped cross section, and the plastic package body 1 includes an upper plastic package body and a lower plastic package body. The end of the negative electrode base plate 3 provided with the negative electrode connecting portion 32 is a first negative electrode connecting plate 33, and a second negative electrode connecting plate 34 is connected between the negative electrode pin 31 and the first negative electrode connecting plate 33.
The positive connecting part 22 and the negative connecting part 32 are both in a stamping lug structure, the convex surface end of the stamping lug of the positive connecting part 22 is in welded connection with one surface of the chip main body 5, the convex end surface of the stamping lug of the negative connecting part 32 is in welded connection with the other surface of the chip main body 5, and the upper plastic package body and the lower plastic package body of the plastic package body 1 clamp and fix the positive base plate 2 and the negative base plate 3.
By welding the positive electrode connecting part 22 and the negative electrode connecting part 32 with the chip main body 5, the production process is simple, the contact surface of welding is large, and the phenomenon that welding of jumper welding is not firm or welding is not performed is avoided. The positive electrode connecting part 22 and the negative electrode connecting part 32 are molded with the chip main body 5 by the plastic package body, and because the welding area is large, even if partial areas are not welded successfully, the positive electrode connecting part 22 and the negative electrode connecting part 32 are welded successfully with the chip main body 5, so that the connection stability of the module diode is good, and the overall electrical property is good.
The convex surfaces of the convex portions of the positive electrode connecting portion 22 and the negative electrode connecting portion 32 have good tin-receiving ability due to the punching operation, and the poor structures such as pores formed inside during welding can be effectively reduced, so that the reliable welding connection with the chip main body 5 can be effectively ensured. The bus bar mounting hole 4 is convenient for the bus bar of the photovoltaic module to pass, the bus bar is convenient to be welded with the anode base plate 2 or the cathode base plate 3 of the module diode, and the stability of connection of the module diode and the overall conductivity are improved in a direct welding mode. The stamping lug of the positive electrode connecting portion 22 and the stamping lug of the negative electrode connecting portion 32 are symmetrically arranged and symmetrically form a waist-shaped structure, so that when a module diode is manufactured, the chip main body 5 is positioned, the precision of the chip main body 5 in the process of being matched with the chip main body 5 for welding is effectively improved, and meanwhile, a large number of air holes are further prevented from being formed in the welding process.
Example 2:
as shown in fig. 4 to 7, the difference from embodiment 1 is that the positive electrode base plate 2 includes a positive electrode pin 21, a positive electrode intermediate connection plate 23, and a first positive electrode connection plate 231, and the negative electrode base plate 3 includes a negative electrode pin 31, a negative electrode intermediate connection plate 35, and a third negative electrode connection plate 351.
The positive electrode substrate 2 and the negative electrode substrate 3 are symmetrically disposed with respect to the chip main body 5, or the positive electrode substrate 2 and the negative electrode substrate 3 are centrally symmetrically disposed with respect to the chip main body 5.
The positive middle connecting plate 23 is a second positive connecting plate 232, the positive connecting part 22 is arranged on the first positive connecting plate 231, the second positive connecting plate 232 is perpendicular to the first positive connecting plate 231 and is connected and arranged, the second positive connecting plate 232 and the positive connecting part 22 are positioned on two sides of the first positive connecting plate 231, the positive pin 21 is perpendicular to the second positive connecting plate 232 and is connected and arranged, and the positive pin 21 and the first positive connecting plate 231 are positioned on the same side of the second positive connecting plate 232.
Negative pole intermediate junction board 35 is fourth negative pole connecting plate 352, and negative pole connecting portion 32 sets up on third negative pole connecting plate 351, and fourth negative pole connecting plate 352 perpendicular to third negative pole connecting plate 351 connects the setting, and fourth negative pole connecting plate 352 and negative pole connecting portion 32 are located the both sides of third negative pole connecting plate 351, and negative pole pin 31 perpendicular to fourth negative pole connecting plate 352 connects the setting, and negative pole pin 31 and third negative pole connecting plate 351 are located same one side of fourth negative pole connecting plate 352.
Through the arrangement of the anode base plate 2 and the cathode base plate 3 about different symmetrical structures of the chip main body 5, the diversity that the module diode is suitable for different photovoltaic junction boxes is improved. The positive pin 21, the first positive connecting plate 231, the negative pin 31 and the third negative connecting plate 351 are matched to be arranged outside the plastic package body 1, the contact area between the positive pin and the outside is increased, the heat dissipation area is enlarged, the heat dissipation capacity is improved, the stability of the module diode to current in a working state is guaranteed, the electrical performance is guaranteed, and the service life of the module diode is prolonged.
Example 3:
as shown in fig. 8 and 9, the difference from embodiment 2 is that the first positive connection plate 231 of the positive electrode base plate 2 and the third negative connection plate 351 of the negative electrode base plate 3 are both of a bent structure, the first positive connection plate 231 is connected with a positive connection vertical plate 234, the positive connection vertical plate 234 is perpendicular to the first positive connection plate 231, the positive connection vertical plate 234 is connected with a third positive connection plate 233, the third positive connection plate 233 is parallel to the first positive connection plate 231, and the third positive connection plate 233 is perpendicular to the second positive connection plate 232;
third negative pole connecting plate 351 is connected with negative pole connection riser 354, and the negative pole is connected riser 354 perpendicular to third negative pole connecting plate 351, and negative pole connection riser 354 is connected with fifth negative pole connecting plate 353, and fifth negative pole connecting plate 353 is parallel to each other with third negative pole connecting plate 351, and fifth negative pole connecting plate 353 perpendicular to fourth negative pole connecting plate 352 sets up.
Through the change to the inside punching press part of plastic-sealed body 1, improved anodal bottom plate 2 and negative pole bottom plate 3 and plastic-sealed body 1's area of contact for the inside outside thermal conversion efficiency of plastic-sealed body 1 has improved the radiating effect, has realized the variety that the module diode was arranged and is connected simultaneously.
Example 4:
as shown in fig. 10 and 11, the difference from the embodiments 1 to 3 is that the positive electrode base plate 2 and the negative electrode base plate 3 are both of a bent structure, a positive electrode intermediate connection plate 23 is connected between the positive electrode pin 21 and the first positive electrode connection plate 231, the positive electrode intermediate connection plate 23 includes a fourth positive electrode connection plate 235 and a fifth positive electrode connection plate 236, the fourth positive electrode connection plate 235 and the fifth positive electrode connection plate 236 are vertically arranged and connected, the fourth positive electrode connection plate 235 is vertically arranged and connected to the positive electrode pin 21, the fifth positive electrode connection plate 236 is vertically arranged and connected to the first positive electrode connection plate 231, the positive electrode pin 21 and the fifth positive electrode connection plate 236 are parallel to each other, and the first positive electrode connection plate 231 and the fourth positive electrode connection plate 235 are parallel to each other;
be connected with negative pole intermediate junction plate 35 between negative pole pin 31 and the third negative pole connecting plate 351, negative pole intermediate junction plate 35 includes sixth negative pole connecting plate 355 and seventh negative pole connecting plate 356, sixth negative pole connecting plate 355 sets up with seventh negative pole connecting plate 356 is perpendicular to and is connected, sixth negative pole connecting plate 355 is perpendicular to negative pole pin 31 and connects the setting, seventh negative pole connecting plate 356 is perpendicular to third negative pole connecting plate 351 and connects the setting, negative pole pin 31 is parallel to each other with seventh negative pole connecting plate 356, third negative pole connecting plate 351 is parallel to each other with sixth negative pole connecting plate 355.
The U-shaped structure formed by the first positive connecting plate 231, the fourth positive connecting plate 235 and the fifth positive connecting plate 236 is convenient to install in the photovoltaic junction box, the heat dissipation area is enlarged, the heat dissipation capacity is improved, the stability of the module diode to current in the working state is guaranteed, the electrical performance is guaranteed, and the service life of the module diode is prolonged.
The invention also provides a manufacturing method of the module diode, which comprises the following steps:
s1, cutting the raw material plates of the anode base plate 2 and the cathode base plate 3, punching the specification plates, punching the protruding parts at the ends of the specification plates, and punching the ends of the plates provided with the punching bumps to adapt to plastic package in different modes;
s2, heating the soldering lug to make the surface of the chip main body 5 connected with the positive electrode connecting part 22 and the negative electrode connecting part 32 by welding;
s3, removing surface impurities of the welded semi-finished product by using a cleaning agent;
s4, performing mould pressing operation on the end part of the plate connected with the chip main body 5, and wrapping the tube core by the plastic package material to isolate the tube core from the external environment;
s5, carrying out high-temperature treatment on the molded plastic package material, baking to evaporate oil stains on the surface of the molded plastic package material at high temperature, and screening out effective finished products;
s6, bending the plate outside the plastic package body 1;
and S7, electroplating the pin of the diode to form a tin layer on the surface of the pin so as to improve the solderability and the protective performance of the pin.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A module diode is characterized by comprising a plastic package body, wherein a chip main body is arranged in the plastic package body and is connected with an anode bottom plate and a cathode bottom plate;
one end of the positive base plate is provided with a positive connecting part, the other end of the positive base plate is provided with a positive pin, and the positive connecting part is connected with one surface of the chip main body;
one end of the negative electrode bottom plate is provided with a negative electrode connecting part, the other end of the negative electrode bottom plate is provided with a negative electrode pin, and the negative electrode connecting part is connected with the other surface of the chip;
the positive electrode connecting part and the negative electrode connecting part are welded with the chip, and the part of the positive electrode bottom plate except the positive electrode pin, the part of the negative electrode bottom plate except the negative electrode pin and the chip main body are arranged in the plastic package;
the positive pole connecting portion with negative pole connecting portion are punching press lug structure, the convex surface end of the punching press lug of positive pole connecting portion and a surface welded connection of chip main part, the convex end face of the punching press lug of negative pole connecting portion and another surface welded connection of chip main part, the plastic-sealed body is fixed positive bottom plate with the negative bottom plate.
2. A modular diode as claimed in claim 1, wherein the cross-section of the plastic package is of an i-shaped configuration, and the plastic package comprises an upper plastic package and a lower plastic package, the end of the negative base plate provided with the negative connection portion is a first negative connection plate, and a second negative connection plate is connected between the negative pin and the first negative connection plate.
3. The modular diode of claim 2, wherein the anode base plate is a straight plate structure, the cathode base plate is a bent structure, the cathode base plate comprises a second cathode connecting plate, the second cathode connecting plate is provided with two bent portions, the second cathode connecting plate, the cathode pin and the first cathode connecting plate form a bus bar mounting hole, the anode base plate is provided with a bus bar mounting hole, and the bus bar mounting hole matches with the notches at the two ends of the plastic package body.
4. A modular diode as claimed in claim 2 wherein the positive base plate includes a positive pin, a positive intermediate connection plate and a first positive connection plate and the negative base plate includes a negative pin, a negative intermediate connection plate and a third negative connection plate.
5. A modular diode as claimed in claim 4, wherein the positive and negative footplates are symmetrically disposed about the chip body or the positive and negative footplates are centrally symmetrically disposed about the chip body.
6. A modular diode as claimed in claim 5, wherein the positive intermediate connection plate is a second positive connection plate, the positive connection plate is disposed on the first positive connection plate, the second positive connection plate is disposed perpendicular to the first positive connection plate, the second positive connection plate and the positive connection plate are disposed on opposite sides of the first positive connection plate, the positive pin is disposed perpendicular to the second positive connection plate, and the positive pin and the first positive connection plate are disposed on the same side of the second positive connection plate;
the negative electrode middle connecting plate is a fourth negative electrode connecting plate, the negative electrode connecting part is arranged on the third negative electrode connecting plate, the fourth negative electrode connecting plate is perpendicular to the third negative electrode connecting plate and is connected and arranged, the fourth negative electrode connecting plate and the negative electrode connecting part are located on two sides of the third negative electrode connecting plate, the negative electrode pin is perpendicular to the fourth negative electrode connecting plate, and the negative electrode pin and the third negative electrode connecting plate are located on the same side of the fourth negative electrode connecting plate.
7. The modular diode of claim 6, wherein the first positive connecting plate of the positive bottom plate and the third negative connecting plate of the negative bottom plate are both of a bent structure, the first positive connecting plate is connected with a positive connecting riser, the positive connecting riser is perpendicular to the first positive connecting plate, the positive connecting riser is connected with a third positive connecting plate, the third positive connecting plate is parallel to the first positive connecting plate, and the third positive connecting plate is perpendicular to the second positive connecting plate;
the third negative pole connecting plate is connected with negative pole connection riser, just negative pole connection riser perpendicular to the third negative pole connecting plate, the negative pole connection riser is connected with fifth negative pole connecting plate, fifth negative pole connecting plate with the third negative pole connecting plate is parallel to each other, fifth negative pole connecting plate perpendicular to the fourth negative pole connecting plate sets up.
8. The modular diode of claim 4, wherein the anode substrate and the cathode substrate are both of a bent structure, an anode intermediate connecting plate is connected between the anode pin and the first anode connecting plate, the anode intermediate connecting plate comprises a fourth anode connecting plate and a fifth anode connecting plate, the fourth anode connecting plate is vertically arranged and connected with the anode pin, the fifth anode connecting plate is vertically arranged and connected with the first anode connecting plate, the anode pin and the fifth anode connecting plate are parallel to each other, and the first anode connecting plate and the fourth anode connecting plate are parallel to each other;
the negative electrode connecting plate comprises a sixth negative electrode connecting plate and a seventh negative electrode connecting plate, the sixth negative electrode connecting plate is vertically connected with the seventh negative electrode connecting plate, the sixth negative electrode connecting plate is perpendicular to the negative electrode pins, the seventh negative electrode connecting plate is perpendicular to the third negative electrode connecting plate, the negative electrode pins are parallel to the seventh negative electrode connecting plate, and the third negative electrode connecting plate is parallel to the sixth negative electrode connecting plate.
9. A method of manufacturing a modular diode according to claim 1, wherein the specific manufacturing method is as follows:
s1, cutting the raw material plates of the anode bottom plate and the cathode bottom plate, punching the specification plates, punching the protruding parts at the ends of the specification plates, and punching the ends of the plates provided with the punching bumps to adapt to plastic package in different modes;
s2, heating the soldering lug to enable the surface of the chip main body to be respectively connected with the positive electrode connecting part and the negative electrode connecting part in a welding mode;
s3, removing surface impurities of the welded semi-finished product by using a cleaning agent;
s4, performing mould pressing operation on the end part of the plate connected with the chip main body, and wrapping the tube core by the plastic package material to isolate the tube core from the external environment;
s5, carrying out high-temperature treatment on the molded plastic package material, baking to evaporate oil stain on the surface of the molded plastic package material at high temperature, and screening out effective finished products;
s6, bending the plate outside the plastic package body;
and S7, electroplating the pin of the diode to form a tin layer on the surface of the pin so as to improve the solderability and the protective performance of the pin.
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| CN202210638080.8A CN114743944B (en) | 2022-06-08 | 2022-06-08 | Module diode and manufacturing method thereof |
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| CN202210638080.8A CN114743944B (en) | 2022-06-08 | 2022-06-08 | Module diode and manufacturing method thereof |
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| CN114743944B CN114743944B (en) | 2022-09-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024016920A1 (en) * | 2022-07-21 | 2024-01-25 | 天合光能股份有限公司 | Diode photovoltaic module and solar cell junction box device |
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| CN203826365U (en) * | 2013-12-20 | 2014-09-10 | 常州星海电子有限公司 | Sheet-type diode |
| CN107527989A (en) * | 2017-09-12 | 2017-12-29 | 深圳市毅宁亮照明有限公司 | A kind of side-emitting LED lamp bead connector |
| CN210349844U (en) * | 2019-09-25 | 2020-04-17 | 东莞市佳骏电子科技有限公司 | Anti-overflow stable surface mount diode packaging structure |
| CN213635977U (en) * | 2020-09-22 | 2021-07-06 | 伯恩半导体（深圳）有限公司 | Paster diode packaging structure of multi-chip lamination |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203826365U (en) * | 2013-12-20 | 2014-09-10 | 常州星海电子有限公司 | Sheet-type diode |
| CN107527989A (en) * | 2017-09-12 | 2017-12-29 | 深圳市毅宁亮照明有限公司 | A kind of side-emitting LED lamp bead connector |
| CN210349844U (en) * | 2019-09-25 | 2020-04-17 | 东莞市佳骏电子科技有限公司 | Anti-overflow stable surface mount diode packaging structure |
| CN213635977U (en) * | 2020-09-22 | 2021-07-06 | 伯恩半导体（深圳）有限公司 | Paster diode packaging structure of multi-chip lamination |
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| WO2024016920A1 (en) * | 2022-07-21 | 2024-01-25 | 天合光能股份有限公司 | Diode photovoltaic module and solar cell junction box device |
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| CN114743944B (en) | 2022-09-02 |
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