CN114725186A - Enhanced GaN-based HEMT device and preparation method and application thereof - Google Patents

Enhanced GaN-based HEMT device and preparation method and application thereof Download PDF

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CN114725186A
CN114725186A CN202210252883.XA CN202210252883A CN114725186A CN 114725186 A CN114725186 A CN 114725186A CN 202210252883 A CN202210252883 A CN 202210252883A CN 114725186 A CN114725186 A CN 114725186A
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metal electrode
gan
aln
stepping
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李国强
吴能滔
邢志恒
李善杰
罗玲
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South China University of Technology SCUT
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South China University of Technology SCUT
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Priority to PCT/CN2022/137648 priority patent/WO2023173836A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

The invention discloses an enhanced GaN-based HEMT device and a preparation method and application thereof. The enhanced GaN-based HEMT device comprises a substrate, a first AlN insert layer, a GaN carbon-doped buffer layer, a GaN channel layer, a second AlN insert layer, a stepping AlGaN barrier layer, a Mg-doped stepping AlGaN barrier layer, an AlN passivation layer, a drain metal electrode, a source metal electrode, a gate metal electrode and a source field plate. The enhanced GaN-based HEMT device has the advantages of high threshold voltage, high breakdown voltage, low manufacturing difficulty, high production efficiency and high product yield, and is suitable for large-scale production and application.

Description

Enhanced GaN-based HEMT device and preparation method and application thereof
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to an enhanced GaN-based HEMT device and a preparation method and application thereof.
Background
The Si-based power device is a power electronic device with wide application, and is widely applied to various fields such as notebooks, displays, mobile phones, various instruments and meters and the like. However, Si-based power devices have limitations of low energy efficiency, slow switching speed, and the like, and it is difficult to meet the requirements of current consumer electronics and new energy vehicles for power conversion systems with high breakdown voltage, low switching loss, and high switching speed.
The third-generation semiconductor GaN material has the advantages of high breakdown field intensity, high electronic saturation velocity, wide forbidden bandwidth and the like, and can be used for preparing GaN-based power devices with high switching speed, high power and low loss. However, the conventional depletion type GaN-based power device not only brings safety hazards to the whole system, but also increases the design difficulty of the driving circuit, and the enhancement type GaN-based power device can improve the safety performance of the power conversion system and simplify the circuit design of the system. At present, the main methods for manufacturing the enhanced GaN-based power device comprise a groove gate structure technology, an F ion implantation technology, a P-GaN gate cap layer structure technology and the like. The P-GaN gate cap layer structure technology is a GaN-based power device which has been commercialized and has a wide development prospect, but the P-GaN layer in the region except under the gate is mainly etched through inductively coupled plasma etching (ICP), so that the problems of low etching precision, generation of lattice damage and the like exist, the performance reduction of the device such as breakdown voltage, output current and the like can be caused, and the practical application of the device is limited.
Therefore, it is very important to develop an enhancement type GaN-based HEMT device with high threshold voltage and high breakdown voltage.
Disclosure of Invention
The invention aims to provide an enhanced GaN-based HEMT device and a preparation method and application thereof.
The technical scheme adopted by the invention is as follows:
an enhanced GaN-based HEMT device comprises a substrate, a first AlN insert layer, a GaN carbon-doped buffer layer, a GaN channel layer, a second AlN insert layer, a stepping AlGaN barrier layer, a Mg-doped stepping AlGaN barrier layer, an AlN passivation layer, a drain metal electrode, a source metal electrode, a gate metal electrode and a source field plate; the substrate, the first AlN insert layer, the GaN carbon-doped buffer layer, the GaN channel layer, the second AlN insert layer and the stepping AlGaN barrier layer are sequentially stacked; the Mg doped stepping AlGaN barrier layer is at least partially embedded into the stepping AlGaN barrier layer; the AlN passivation layer, the drain metal electrode and the source metal electrode are arranged on the surface of the stepping AlGaN barrier layer away from the second AlN insert layer, and the AlN passivation layer is contacted with the drain metal electrode and the source metal electrode; the gate metal electrode is at least partially embedded into the AlN passivation layer and is in contact with the Mg-doped stepping AlGaN barrier layer; the source field plate is contacted with the source metal electrode and the AlN passivation layer, and the part of the source field plate covers the AlN passivation layer.
Preferably, the substrate is selected from one of a sapphire substrate, a SiC substrate, and a Si substrate.
Preferably, the first AlN insert layer has a thickness of 0.1 to 1 μm.
Preferably, the GaN carbon-doped buffer layer has a thickness of 1 to 3 μm.
Preferably, the thickness of the GaN channel layer is 1 μm to 3 μm.
Preferably, the thickness of the second AlN insertion layer is 1nm to 2 nm.
Preferably, the number of the stepped AlGaN barrier layers is 2 to 8, and the mass percentage of aluminum is gradually decreased from 50 percent to 0 percent from the layer close to the second AlN insert layer.
Preferably, the stepped AlGaN barrier layer has a thickness of 5nm to 50 nm.
Preferably, the thickness of the Mg-doped stepped AlGaN barrier layer is 5nm to 50 nm.
Preferably, the AlN passivation layer has a thickness of 20nm to 500 nm.
Preferably, the leakage metal electrode is composed of four metal layers of Ti, Al, Ni and Au.
Preferably, the source metal electrode is composed of four metal layers of Ti, Al, Ni and Au.
Preferably, the gate metal electrode is composed of two metal layers of Ni and Au.
Preferably, the source field plate is composed of four metal layers of Ti, Al, Ni and Au, and the length of the source field plate is 1-15 μm.
The preparation method of the enhanced GaN-based HEMT device comprises the following steps:
1) sequentially epitaxially growing a first AlN insert layer, a GaN carbon-doped buffer layer, a GaN channel layer, a second AlN insert layer and a stepping AlGaN barrier layer on a substrate;
2) photoetching is carried out to expose a grid electrode area, metal Mg is evaporated, stripping and annealing are carried out, and a Mg-doped stepping AlGaN barrier layer is formed in the area below the grid electrode;
3) photoetching is carried out to expose the source metal electrode and the drain metal electrode area, and evaporation, stripping and annealing are carried out to form a source metal electrode and a drain metal electrode;
4) isolating the table top;
5) photoetching is carried out to expose the gate metal electrode area, and a gate metal electrode is formed through evaporation and stripping;
6) epitaxially growing an AlN passivation layer;
7) and photoetching is carried out, the AlN passivation layer below the source metal electrode area is removed through etching, and a source field plate is formed through photoetching, evaporation and stripping, so that the enhanced GaN-based HEMT device is obtained.
Preferably, the epitaxial growth in step 1) adopts a Metal Organic Chemical Vapor Deposition (MOCVD) method, and the growth temperature is 850-950 ℃.
Preferably, the annealing in the step 2) is carried out at 550-650 ℃, and the annealing time is 1-30 min.
Preferably, the annealing in step 3) is specifically performed by: heating to 800-900 ℃ at the heating rate of 15-20 ℃/s in the nitrogen atmosphere or the air atmosphere, and then preserving the heat for 20-40 s.
Preferably, the epitaxial growth in step 6) is performed by Physical Vapor Deposition (PVD).
An electronic device is composed of the enhanced GaN-based HEMT device.
Preferably, the electronic device is a fast charger.
The invention has the beneficial effects that: the enhanced GaN-based HEMT device has the advantages of high threshold voltage, high breakdown voltage, low manufacturing difficulty, high production efficiency and high product yield, and is suitable for large-scale production and application.
Specifically, the method comprises the following steps:
1) the invention adopts the stepping AlGaN barrier layer to carry out Mg metal doping and diffusion to manufacture the enhanced GaN HEMT power device, can play the role of one stone and two birds, and is mainly expressed as follows: a) the AlGaN barrier layer with low Al component is beneficial to diffusion doping of Mg metal, and can improve the threshold voltage of the device; b) mg is difficult to diffuse in AlGaN with high Al component, and can effectively inhibit Mg from diffusing to a 2DEG channel, thereby avoiding influencing the mobility of the 2 DEG;
2) the P-type stepping AlGaN barrier layer in the enhanced GaN-based HEMT device can further reduce the distance between the grid and the barrier layer, enhance the grid control capability of the device, avoid the damage caused by the problems of etching and the like, reduce the surface defects, and is beneficial to improving the electrical characteristics of the device such as the threshold voltage and the like along with the increase of the concentration and the depth of Mg diffusion;
3) the AlN passivation layer is prepared by adopting a physical vapor deposition method, so that the defect state of the device can be further inhibited, and the breakdown voltage of the device can be improved.
Drawings
Fig. 1 is a schematic structural view of an enhancement type GaN-based HEMT device of embodiment 1.
The attached drawings indicate the following: 1. a sapphire substrate; 2. a first AlN insert layer; 3. a GaN carbon-doped buffer layer; 4. a GaN channel layer; 5. a second AlN insert layer; 6. a stepped AlGaN barrier layer; 7. mg doping stepping AlGaN barrier layers; 8. an AlN passivation layer; 9. a drain metal electrode; 10. a source metal electrode; 11. a gate metal electrode; 12. a source field plate.
Fig. 2 is a transfer characteristic curve of the enhancement type GaN-based HEMT device of example 1.
Fig. 3 is an output characteristic curve of the enhancement type GaN-based HEMT device of example 1.
Detailed Description
The invention will be further explained and illustrated with reference to specific examples.
Example 1:
an enhancement mode GaN-based HEMT device (the schematic structure is shown in FIG. 1), which comprises:
the GaN-based light-emitting diode comprises a sapphire substrate 1, a first AlN insert layer 2, a GaN carbon-doped buffer layer 3, a GaN channel layer 4, a second AlN insert layer 5, a stepping AlGaN barrier layer 6, a Mg-doped stepping AlGaN barrier layer 7, an AlN passivation layer 8, a drain metal electrode 9, a source metal electrode 10, a gate metal electrode 11 and a source field plate 12;
the sapphire substrate 1, the first AlN insert layer 2, the GaN carbon-doped buffer layer 3, the GaN channel layer 4, the second AlN insert layer 5 and the stepping AlGaN barrier layer 6 are sequentially stacked;
the Mg doped stepping AlGaN barrier layer 7 is at least partially embedded into the stepping AlGaN barrier layer 6;
the AlN passivation layer 8, the drain metal electrode 9 and the source metal electrode 10 are arranged on the surface of the stepping AlGaN barrier layer 6 far away from the second AlN insert layer 5, and the AlN passivation layer 8 is contacted with the drain metal electrode 9 and the source metal electrode 10;
the gate metal electrode 11 is at least partially embedded into the AlN passivation layer 8, and the gate metal electrode 11 is in contact with the Mg-doped stepped AlGaN barrier layer 7;
the source field plate 12 is in contact with the source metal electrode 10 and the AlN passivation layer 8, and the source field plate 12 partially covers the AlN passivation layer 8.
The preparation method of the enhanced GaN-based HEMT device comprises the following steps:
1) epitaxially growing a first AlN insert layer with the thickness of 0.1 mu m on the sapphire substrate by adopting an MOCVD method, wherein the growth temperature is 850 ℃;
2) epitaxially growing a GaN carbon-doped buffer layer with the thickness of 1 mu m on the first AlN insert layer by adopting an MOCVD method, wherein the growth temperature is 850 ℃;
3) epitaxially growing a GaN channel layer with the thickness of 1 mu m on the GaN carbon-doped buffer layer by adopting an MOCVD method, wherein the growth temperature is 850 ℃;
4) epitaxially growing a second AlN insert layer with the thickness of 1nm on the GaN channel layer by adopting an MOCVD method, wherein the growth temperature is 850 ℃;
5) and epitaxially growing a stepping AlGaN barrier layer with the thickness of 5nm on the second AlN insert layer by adopting an MOCVD method, wherein the growth temperature is 850 ℃, and the specific operation is as follows: introducing (trimethylaluminum) TMAl, TMGa and NH under the condition that the substrate temperature is 1100 DEG C3Acting on the substrate surface, TMAl and TMGa varying in constant molar amounts, NH3The flow rate is 10sccm, TMAl, TMGa and NH are introduced3The time of the growth is 40s, and the growth rate of AlGaN is kept constant regardless of the change of Al composition;
6) photoetching is carried out to expose a grid region, then evaporating metal Mg with the thickness of 50nm, stripping is carried out, annealing is carried out for 5min at 550 ℃, and a Mg-doped stepping AlGaN barrier layer is formed in the region below the grid;
7) photoetching is carried out to expose the regions of the source metal electrode and the drain metal electrode, evaporation, stripping and annealing are carried out, and the annealing operation is as follows: heating to 800 ℃ at a heating rate of 15 ℃/s in a nitrogen atmosphere, and then preserving heat for 20s to form a source metal electrode consisting of four metal layers of Ti, Al, Ni and Au, and form a drain metal electrode consisting of four metal layers of Ti, Al, Ni and Au;
8) performing mesa isolation and etching to the GaN channel layer;
9) photoetching is carried out to expose a gate metal electrode area, and a gate metal electrode consisting of two metal layers of Ni and Au is formed through evaporation and stripping;
10) epitaxially growing an AlN passivation layer with the thickness of 20nm by adopting a Physical Vapor Deposition (PVD) method, wherein the growth temperature is 230 ℃;
11) and carrying out chemical corrosion treatment to remove the AlN passivation layer below the source metal electrode, the drain metal electrode and the gate metal electrode, and specifically operating as follows: soaking the metal electrode in a sodium hydroxide solution for 50s, then carrying out photoetching, evaporation and stripping on the metal electrode, and leading out a source metal electrode, a drain metal electrode and a gate metal electrode;
12) and photoetching, evaporating and stripping to form a source field plate consisting of four metal layers of Ti, Al, Ni and Au, and extending the source field plate to the gate metal electrode by 2 microns to obtain the enhanced GaN-based HEMT device.
And (3) performance testing:
the transfer characteristic curve of the enhancement mode GaN-based HEMT device of this example is shown in fig. 2, and the output characteristic curve is shown in fig. 3.
As can be seen from fig. 2 and 3: v of the enhanced GaN-based HEMT device of the embodimentD1V, threshold voltageIs 2.3V, VG1V, 3V and 5V, a maximum current density of 450mA/mm and a breakdown voltage of 700V.
Example 2:
an enhanced GaN-based HEMT device is prepared by the following steps:
1) epitaxially growing a first AlN insert layer with the thickness of 0.5 mu m on the Si substrate by adopting an MOCVD method, wherein the growth temperature is 900 ℃;
2) epitaxially growing a GaN carbon-doped buffer layer with the thickness of 2 mu m on the first AlN insert layer by adopting an MOCVD method, wherein the growth temperature is 900 ℃;
3) epitaxially growing a GaN channel layer with the thickness of 2 mu m on the GaN carbon-doped buffer layer by adopting an MOCVD method, wherein the growth temperature is 900 ℃;
4) epitaxially growing a second AlN insert layer with the thickness of 1.5nm on the GaN channel layer by adopting an MOCVD method, wherein the growth temperature is 900 ℃;
5) and epitaxially growing a stepping AlGaN barrier layer with the thickness of 30nm on the second AlN insert layer by adopting an MOCVD method, wherein the growth temperature is 1100 ℃, and the specific operation is as follows: introducing (trimethylaluminum) TMAl, TMGa and NH under the condition that the substrate temperature is 1100 DEG C3Acting on the substrate surface, TMAl and TMGa varying in constant molar amounts, NH3The flow rate is 10sccm, TMAl, TMGa and NH are introduced3The time of the growth is 40s, and the growth rate of AlGaN is kept constant regardless of the change of Al composition;
6) photoetching is carried out to expose a grid region, evaporating metal Mg with the thickness of 150nm, stripping is carried out, annealing is carried out for 15min at the temperature of 600 ℃, and a Mg-doped stepping AlGaN barrier layer is formed in the region below the grid;
7) photoetching is carried out to expose the regions of the source metal electrode and the drain metal electrode, evaporation, stripping and annealing are carried out, and the annealing operation is as follows: heating to 850 ℃ at the heating rate of 20 ℃/s in the nitrogen atmosphere, and then preserving heat for 30s to form a source metal electrode consisting of four metal layers of Ti, Al, Ni and Au, and form a drain metal electrode consisting of four metal layers of Ti, Al, Ni and Au;
8) performing mesa isolation and etching to the GaN channel layer;
9) photoetching is carried out to expose a gate metal electrode area, and a gate metal electrode consisting of two metal layers of Ni and Au is formed through evaporation and stripping;
10) epitaxially growing an AlN passivation layer with the thickness of 300nm by adopting a Physical Vapor Deposition (PVD) method, wherein the growth temperature is 230 ℃;
11) and carrying out chemical corrosion treatment to remove the AlN passivation layer below the source metal electrode, the drain metal electrode and the gate metal electrode, and specifically operating as follows: soaking the metal electrode in a sodium hydroxide solution for 50s, then carrying out photoetching, evaporation and stripping on the metal electrode, and leading out a source metal electrode, a drain metal electrode and a gate metal electrode;
12) and photoetching, evaporating and stripping to form a source field plate consisting of four metal layers of Ti, Al, Ni and Au, and extending the source field plate to the gate metal electrode by 8 microns to obtain the enhanced GaN-based HEMT device.
Performance testing (test method same as example 1):
the threshold voltage of the enhancement mode GaN-based HEMT device of the embodiment is 2.2V, the maximum current density is 465mA/mm, and the breakdown voltage is 900V.
Example 3:
an enhanced GaN-based HEMT device is prepared by the following steps:
1) epitaxially growing a first AlN insert layer with the thickness of 1 mu m on the SiC substrate by adopting an MOCVD method, wherein the growth temperature is 950 ℃;
2) epitaxially growing a GaN carbon-doped buffer layer with the thickness of 3 mu m on the first AlN insert layer by adopting an MOCVD method, wherein the growth temperature is 950 ℃;
3) epitaxially growing a GaN channel layer with the thickness of 3 mu m on the GaN carbon-doped buffer layer by adopting an MOCVD method, wherein the growth temperature is 950 ℃;
4) epitaxially growing a second AlN insert layer with the thickness of 2nm on the GaN channel layer by adopting an MOCVD method, wherein the growth temperature is 950 ℃;
5) and epitaxially growing a stepping AlGaN barrier layer with the thickness of 50nm on the second AlN insert layer by adopting an MOCVD method, wherein the growth temperature is 1100 ℃, and the specific operation is as follows: introducing (trimethylaluminum) TMAl, TMGa and NH under the condition that the substrate temperature is 1100 DEG C3Acting on the surface of the substrate, TMAl and TMGa are varied in constant molar amounts, NH3The flow rate is 10sccm, TMAl, TMGa and NH are introduced3The time of the growth is 40s, and the growth rate of AlGaN is kept constant regardless of the change of Al composition;
6) photoetching is carried out to expose a grid region, metal Mg with the thickness of 200nm is evaporated, stripping is carried out, annealing is carried out at 550 ℃ for 30min, and a Mg-doped stepping AlGaN barrier layer is formed in the region below the grid;
7) photoetching is carried out to expose the regions of the source metal electrode and the drain metal electrode, evaporation, stripping and annealing are carried out, and the annealing operation is as follows: heating to 900 ℃ at the heating rate of 20 ℃/s in the nitrogen atmosphere, and then preserving heat for 20s to form a source metal electrode consisting of four metal layers of Ti, Al, Ni and Au, and form a drain metal electrode consisting of four metal layers of Ti, Al, Ni and Au;
8) performing mesa isolation and etching to the GaN channel layer;
9) photoetching is carried out to expose a gate metal electrode area, and a gate metal electrode consisting of two metal layers of Ni and Au is formed through evaporation and stripping;
10) epitaxially growing an AlN passivation layer with the thickness of 500nm by adopting a Physical Vapor Deposition (PVD) method, wherein the growth temperature is 230 ℃;
11) and carrying out chemical corrosion treatment to remove the AlN passivation layer below the source metal electrode, the drain metal electrode and the gate metal electrode, and specifically operating as follows: soaking the metal electrode in a sodium hydroxide solution for 50s, then carrying out photoetching, evaporation and stripping on the metal electrode, and leading out a source metal electrode, a drain metal electrode and a gate metal electrode;
12) and photoetching, evaporating and stripping to form a source field plate consisting of four metal layers of Ti, Al, Ni and Au, and extending the source field plate to the gate metal electrode by 10 microns to obtain the enhanced GaN-based HEMT device.
Performance testing (test method same as example 1):
the threshold voltage of the enhancement mode GaN-based HEMT device of the embodiment is 2.4V, the maximum current density is 500mA/mm, and the breakdown voltage is 1235V.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.

Claims (10)

1. An enhanced GaN-based HEMT device is characterized by comprising a substrate, a first AlN insert layer, a GaN carbon-doped buffer layer, a GaN channel layer, a second AlN insert layer, a stepping AlGaN barrier layer, a Mg-doped stepping AlGaN barrier layer, an AlN passivation layer, a drain metal electrode, a source metal electrode, a gate metal electrode and a source field plate; the substrate, the first AlN insert layer, the GaN carbon-doped buffer layer, the GaN channel layer, the second AlN insert layer and the stepping AlGaN barrier layer are sequentially stacked; the Mg doped stepping AlGaN barrier layer is at least partially embedded into the stepping AlGaN barrier layer; the AlN passivation layer, the drain metal electrode and the source metal electrode are arranged on the surface, away from the second AlN insertion layer, of the stepping AlGaN barrier layer, and the AlN passivation layer is in contact with the drain metal electrode and the source metal electrode; the gate metal electrode is at least partially embedded into the AlN passivation layer and is in contact with the Mg-doped stepping AlGaN barrier layer; the source field plate is contacted with the source metal electrode and the AlN passivation layer, and the part of the source field plate covers the AlN passivation layer.
2. The enhanced GaN-based HEMT device of claim 1, wherein: the thickness of the first AlN insert layer is 0.1-1 mu m; the thickness of the GaN carbon-doped buffer layer is 1-3 mu m; the thickness of the GaN channel layer is 1-3 mu m; the thickness of the second AlN insert layer is 1 nm-2 nm; the thickness of the stepping AlGaN barrier layer is 5 nm-50 nm; the thickness of the Mg-doped stepping AlGaN barrier layer is 5 nm-50 nm; the AlN passivation layer is 20 nm-500 nm thick.
3. The enhancement-type GaN-based HEMT device according to claim 1 or 2, wherein: the substrate is selected from one of a sapphire substrate, a SiC substrate and a Si substrate.
4. The enhancement-type GaN-based HEMT device according to claim 1 or 2, wherein: the number of layers of the stepping AlGaN barrier layers is 2-8, and the mass percentage of aluminum is gradually decreased from 50% to 0% from the layer close to the second AlN insert layer.
5. The enhancement-type GaN-based HEMT device according to claim 1 or 2, wherein: the drain metal electrode and the source metal electrode are both composed of four metal layers of Ti, Al, Ni and Au.
6. The enhancement-type GaN-based HEMT device according to claim 1 or 2, wherein: the gate metal electrode is composed of two metal layers of Ni and Au.
7. The enhancement-type GaN-based HEMT device according to claim 1 or 2, wherein: the source field plate is composed of four metal layers of Ti, Al, Ni and Au, and the length of the source field plate is 1-15 mu m.
8. The method for manufacturing the enhancement-type GaN-based HEMT device as claimed in any one of claims 1 to 7, characterized by comprising the following steps:
1) sequentially epitaxially growing a first AlN insert layer, a GaN carbon-doped buffer layer, a GaN channel layer, a second AlN insert layer and a stepping AlGaN barrier layer on a substrate;
2) photoetching is carried out to expose a grid region, metal Mg is evaporated, stripping and annealing are carried out, and a Mg-doped stepping AlGaN barrier layer is formed in the region below the grid;
3) photoetching is carried out to expose the source metal electrode and the drain metal electrode area, and evaporation, stripping and annealing are carried out to form a source metal electrode and a drain metal electrode;
4) isolating the table top;
5) photoetching is carried out to expose the gate metal electrode area, and a gate metal electrode is formed through evaporation and stripping;
6) epitaxially growing an AlN passivation layer;
7) and photoetching is carried out, the AlN passivation layer below the source metal electrode area is removed through etching, and a source field plate is formed through photoetching, evaporation and stripping, so that the enhanced GaN-based HEMT device is obtained.
9. The method for manufacturing an enhanced GaN-based HEMT device according to claim 8, wherein: step 1), the epitaxial growth adopts an organic metal chemical vapor deposition method, and the growth temperature is 850-950 ℃; the annealing in the step 2) is carried out at the temperature of 550-650 ℃, and the annealing time is 1-30 min; step 3) the annealing operation is as follows: heating to 800-900 ℃ at a heating rate of 15-20 ℃/s in a nitrogen atmosphere or an air atmosphere, and then preserving heat for 20-40 s; and 6) the epitaxial growth adopts a physical vapor deposition method.
10. An electronic device characterized by comprising the enhanced GaN-based HEMT device of any one of claims 1 to 7.
CN202210252883.XA 2022-03-15 2022-03-15 Enhanced GaN-based HEMT device and preparation method and application thereof Pending CN114725186A (en)

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WO2023173836A1 (en) * 2022-03-15 2023-09-21 华南理工大学 Enhanced gan-based hemt device, and manufacturing method therefor and use thereof

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CN210092092U (en) * 2019-03-21 2020-02-18 华南理工大学 Magnesium-doped prepared enhanced GaN-based HEMT device
CN113871477A (en) * 2021-08-30 2021-12-31 瑶芯微电子科技(上海)有限公司 Double-heterojunction HEMT device based on grid field plate and source field plate and preparation method thereof
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