CN114724962A - 一种半导体封装方法及装置 - Google Patents
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Abstract
本发明公开了一种半导体封装方法,属于半导体封装技术领域。该封装方法包括如下步骤:对引线框架进行加温;对加温后的引线框架进行预融点锡,其中,预融点锡为将熔融态的焊锡点至键合点;将芯片安装至引线框架。本发明提供一种半导体封装方法,本发明相较于网印锡膏,避免焊膏残留浪费的同时利于环保,省去了后续的加热键合的工序;同时由于无需加热炉加热键合,从而省去炉渣清洁和助焊剂清洗的步骤,无锡珠残留,不会造成铜片位移,而相对于点锡和/或画锡,不会造成芯片位移,因此可适用于铜片桥接黏芯产品且可克服芯片和/或铜片位移的问题。本发明还提供了一种封装装置,用于实现上述封装方法。
Description
技术领域
本发明涉及半导体封装技术领域,特别涉及一种半导体封装方法及装置。
背景技术
半导体封装是指将通过测试的晶圆按照产品型号及功能需求加工得到独立芯片的过程。封装过程为:来自晶圆前道工艺的晶圆通过划片工艺后被切割为小的芯片(Die),然后将切割好的芯片用胶水贴装到相应的基板(引线框架)架的小岛上,再利用超细的金属(金铜铝)导线将芯片的接合焊盘(Bond Pad)连接到基板的相应引脚(Lead),并构成所要求的电路;然后再对独立的芯片用塑料外壳加以使用塑封料塑封。
现有技术中,对半导体功率器件封装中,根据工艺不同,一般包括两种工艺路线。
第一种工艺路线:
当单片封装时:S1,引线框架入料;S2,引线框架进行刷锡膏或点锡膏;S3,将芯片放置于引线框架;S4,送至加热炉进行键合;S5,进行清洗去除助焊剂残留物。
当铜片桥接黏芯封装时:S1,引线框架入料;S2,引线框架进行刷锡膏或点锡膏;S3,将芯片放置于引线框架;S4,对芯片进行网印锡膏或点锡膏;S5,进行铜片桥接黏芯;S6,送至加热炉进行键合;S7,清洗去除助焊剂残留物。
第二种工艺路线:
S1,引线框架入料;S2,将引线框架送入密封轨道(含有氮氢汽体抗氧化)进行加热;S3,再将引线框架运送至上锡区,使用锡丝进行点锡或画锡;S4,将芯片放置引线框架上与锡键合。
图1展示了现有技术中点锡工艺的实施装备的结构示意图,其通过加热板5对引线框架进行加热,焊锡液接触引线框架,受热后融化使熔融态的焊锡液附着在引线框架或芯片表面,以进行后续的键合工作。
但是这种方式由于锡丝需直接接触芯片,而芯片与引线框架间尚未键合固定,会导致产生芯片位移,因此现有工艺中不适用于有铜片桥接黏芯的产品。
而通过网印锡膏会导致部分锡膏残留于丝网上,造成浪费的同时也不利于环保,同时在后续的键合工序中,还会存在锡珠残留的问题,导致芯片可靠度降低,另外,加热炉加热过程中还会造成芯片铜片位移的问题。
发明内容
本发明提供一种半导体封装方法,可以解决现有对半导体封装的工艺路线中所存在的锡膏浪费、不环保、锡珠残留导致可靠度降低;画锡或点锡无法适用于有铜片桥接黏芯工艺产品的问题;
本发明还提供了一种半导体封装装置,用于实现上述封装方法。
一种半导体封装方法,包括如下步骤:
对引线框架进行加温;
对加温后的引线框架进行预融点锡,其中,预融点锡为将熔融态的焊锡输送至键合点;
将芯片安装至引线框架。
更优地,当进行铜片桥接黏芯封装时,封装方法还包括:
对芯片进行预融点锡;
对熔融点锡后的芯片进行铜片桥接黏芯。
更优地,预融点锡时,通入有抗氧化气体,以防止熔融态的焊锡氧化。
更优地,引线框架的加热区域为含抗氧化还原气体的封闭区间。
更优地,引线框架通过设备轨道输送至封闭区间。
一种半导体封装装置,用于实现上述的预融点锡步骤,所述封装装置包括:
至少一熔融装置,用于对焊锡进行加热以使其熔融为焊锡液,其中,所述熔融装置至少具有一用于容纳焊锡液流出的出锡口;以及,
抗氧化装置,所述熔融装置上开设有至少一用于连接至所述抗氧化还原装置的进气通道,所述抗氧化还原装置用于向所述熔融装置内送入抗氧化还原气体。
更优地,还包括用于对焊锡进行加热的加热壁,所述进气通道开设在所述加热壁上。
更优地,所述进气通道为多个,多个所述进气通道沿所述加热壁的周向均匀布置。
本发明提供一种半导体封装方法,本发明通过将焊锡预加热至熔融温度,使焊锡以熔融态点至键合点并进行键合,相较于网印锡膏,避免锡膏残留于网板浪费的同时利于环保,省去了后续的加热键合;同时由于无需加热炉加热键合,从而省去炉渣清洁和助焊剂清洗的步骤,无锡珠残留,由于该种方式直接以熔融态焊锡液键合,相对于网印锡膏,不会造成铜片/芯片位移,而相对于点锡和/或画锡无法在芯片上作业,又不会造成芯片位移,因此可适用于铜片桥接黏芯工艺产品且可克服芯片和/或铜片位移的问题,可适用于铜片桥接黏芯工艺产品。
附图说明
图1为现有技术中点锡工艺实施装备的结构状态示意图;
图2为本发明提供的一种半导体封装方法及装置的结构示意图。
附图标记说明:
1出锡口;2进气通道;22第二进气通道;3加热壁;4焊锡丝;5加热板。
具体实施方式
下面结合附图,对本发明的一个具体实施方式进行详细描述,但应当理解本发明的保护范围并不受具体实施方式的限制。
本发明提供一种半导体封装方法及用于实施上述方法的封装装置。用于对半导体功率器件的封装。
实施例一:
本发明实施例提供的一种半导体封装方法,包括如下步骤:
通过设备轨道将引线框架输送至加热区域,该加热区域为封闭区间,用于对引线框架进行加温,使引线框架与熔融态焊锡液的温差缩小,可有效改善焊焊锡液直接接触引线框架时,由于温差过大所导致的脱焊、虚焊等键合质量问题;其中,引线框架的加热区域含抗氧化气体。
对加温后的引线框架进行预融点锡,其中,预融点锡为将熔融态的焊锡液点至键合点,具体为通过预加热装置对锡丝(可以理解的是,此处的锡丝也可以为其他焊接金属或非金属焊接材料)进行加热,使锡融化为熔融态的焊锡液,再将焊锡液涂布至引线框架上;
将芯片安装至引线框架,待焊锡液冷却后即完成键合。
其中,为了避免焊锡液氧化,预融点锡时,通入有抗氧化还原气体,如氢氮混合气,以防止熔融态的焊锡液氧化。
该方法由于直接涂布焊锡液,不存在焊锡膏浪费的问题;由于无需送至加热炉键合,因此不存在现有工艺中,需将芯片和引线框架送至加热炉进行加热所带来的炉渣清理和助焊剂残料清理的问题,大大提高了生产效率,节省工艺步骤,解决环保。
实施例二:
与实施例一不同的是,本实施例为进行铜片桥接黏芯封装。值得注意的是,铜片桥接黏芯指在芯片上键合铜片,由于半导体器件工作时会产生大量的热,为了提高封装后芯片的散热效果,在半导体上覆盖(键合)铜片,通过铜片提高导热性能,达到快速散热的效果的工艺步骤,该封装方法包括:
通过设备轨道将引线框架输送至加热区域,该加热区域为封闭区间,用于对引线框架进行加温,使引线框架与熔融态焊锡液的温差缩小,可有效改善焊锡液直接接触引线框架时,由于温差过大所导致的脱焊、虚焊等键合质量问题;其中,引线框架的加热区域含抗氧化还原气体。
对加温后的引线框架进行预融点锡,其中,预融点锡为将熔融态的焊锡点至键合点,具体为通过加热装置对锡丝进行加热,使锡丝融化为熔融态的焊锡液,再将焊锡液涂布至引线框架上;
将芯片安装至引线框架;
对芯片进行预融点锡,此步骤中的预融点锡工艺与上述工艺过程相同,区别在于锡丝熔融后,将焊锡液涂布至芯片表面,由于此步骤中涂布的为熔融态的焊锡液,引线框架直接与芯片进行键合而无需送至加热炉,因此不会造成芯片位移或铜片位移;
对熔融点锡后的芯片进行上铜片桥接黏芯。
其中,为了避免焊锡液氧化,进行上述预融点锡时,通入有抗氧化还原气体,如氮气,以防止熔融态的焊锡液氧化。
实施例三:
本实施例提供一种封装装置,用于实现实施例一和/或实施例二中的预融点锡步骤,如图2所示,该封装装置包括:
熔融装置,用于对焊锡进行加热以使其熔融为焊锡液,其中,熔融装置具有一用于容纳焊锡液流出的出锡口,焊锡液从出锡口流出后送至键合点;以及,
抗氧化还原装置,熔融装置上开设有用于连接至抗氧化还原装置的进气通道,本实施例中,以第一进气通道和第二进气通道两个进气通道为例,第一进气通道和第二进气通道对称布置,抗氧化还原装置用于向熔融装置内送入抗氧化还原气体。
具体的,熔融装置包括用于对焊锡进行加热的加热区,进气通道开设在加热区,第一进气通道和第二进气通道关于加热区分布,可以理解的是,进气通道可为多个,多个进气通道可沿加热区的周向均匀开设。加热壁的热源可采用现有技术中的方式,如电加热或其他等同替换方式。抗氧化还原装置具体为能够送入抗氧化还原气体的装置,如气泵。通过送入抗氧化还原气体,可避免焊锡液与空气中的氧分子接触而造成焊锡液氧化。
以上公开的仅为本发明的几个具体实施例,但是,本发明实施例并非局限于此,任何本领域的技术人员能思之的变化都应落入本发明的保护范围。
Claims (8)
1.一种半导体封装方法,其特征在于,包括如下步骤:
对引线框架进行加温;
对加温后的引线框架进行预融点锡,其中,预融点锡为将熔融态的焊锡输送至键合点;
将芯片安装至引线框架。
2.如权利要求1所述的一种半导体封装方法,其特征在于,当进行铜片桥接黏芯封装时,封装方法还包括:
对芯片进行预融点锡;
对熔融点锡后的芯片进行铜片桥接黏芯。
3.如权利要求1所述的一种半导体封装方法,其特征在于,预融点锡时,通入有抗氧化气体,以防止熔融态的焊锡氧化。
4.如权利要求3所述的一种半导体封装方法,其特征在于,引线框架的加热区域为含抗氧化还原气体的封闭区间。
5.如权利要求4所述的一种半导体封装方法,其特征在于,引线框架通过设备轨道输送至封闭区间。
6.一种半导体封装装置,用于实现如权利要求1-5中任意一项所述的预融点锡步骤,其特征在于,所述封装装置包括:
至少一熔融装置,用于对焊锡进行加热以使其熔融为焊锡液,其中,所述熔融装置至少具有一用于容纳焊锡液流出的出锡口;以及,
抗氧化装置,所述熔融装置上开设有至少一用于连接至所述抗氧化还原装置的进气通道,所述抗氧化还原装置用于向所述熔融装置内送入抗氧化还原气体。
7.如权利要求6所述的一种半导体封装装置,其特征在于,还包括用于对焊锡进行加热的加热壁,所述进气通道开设在所述加热壁上。
8.如权利要求7所述的一种半导体封装装置,其特征在于,所述进气通道为多个,多个所述进气通道沿所述加热壁的周向均匀布置。
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