CN114686834A - 用于静电卡盘表面的径向向外的垫设计 - Google Patents

用于静电卡盘表面的径向向外的垫设计 Download PDF

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Publication number
CN114686834A
CN114686834A CN202210254455.0A CN202210254455A CN114686834A CN 114686834 A CN114686834 A CN 114686834A CN 202210254455 A CN202210254455 A CN 202210254455A CN 114686834 A CN114686834 A CN 114686834A
Authority
CN
China
Prior art keywords
elongated features
electrostatic chuck
outer edge
radially aligned
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210254455.0A
Other languages
English (en)
Chinese (zh)
Inventor
戈文达·瑞泽
罗伯特·T·海拉哈拉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN114686834A publication Critical patent/CN114686834A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
CN202210254455.0A 2015-02-06 2016-01-06 用于静电卡盘表面的径向向外的垫设计 Pending CN114686834A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/616,647 2015-02-06
US14/616,647 US20160230269A1 (en) 2015-02-06 2015-02-06 Radially outward pad design for electrostatic chuck surface
CN201680004654.9A CN107208261A (zh) 2015-02-06 2016-01-06 用于静电卡盘表面的径向向外的垫设计
PCT/US2016/012362 WO2016126360A1 (en) 2015-02-06 2016-01-06 Radially outward pad design for electrostatic chuck surface

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201680004654.9A Division CN107208261A (zh) 2015-02-06 2016-01-06 用于静电卡盘表面的径向向外的垫设计

Publications (1)

Publication Number Publication Date
CN114686834A true CN114686834A (zh) 2022-07-01

Family

ID=56564492

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202210254455.0A Pending CN114686834A (zh) 2015-02-06 2016-01-06 用于静电卡盘表面的径向向外的垫设计
CN201680004654.9A Pending CN107208261A (zh) 2015-02-06 2016-01-06 用于静电卡盘表面的径向向外的垫设计

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201680004654.9A Pending CN107208261A (zh) 2015-02-06 2016-01-06 用于静电卡盘表面的径向向外的垫设计

Country Status (7)

Country Link
US (1) US20160230269A1 (https=)
EP (1) EP3254307B1 (https=)
JP (1) JP6711838B2 (https=)
KR (1) KR102619126B1 (https=)
CN (2) CN114686834A (https=)
TW (1) TWI685916B (https=)
WO (1) WO2016126360A1 (https=)

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US9646843B2 (en) * 2014-12-08 2017-05-09 Applied Materials, Inc. Tunable magnetic field to improve uniformity
KR102669903B1 (ko) * 2016-08-30 2024-05-28 주성엔지니어링(주) 기판 처리 장치
US20180148835A1 (en) 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
KR102359591B1 (ko) * 2017-06-16 2022-02-08 주성엔지니어링(주) 진공용 회전 전기 커넥터
JP7208168B2 (ja) * 2017-06-16 2023-01-18 チュソン エンジニアリング カンパニー，リミテッド 基板処理装置及び真空回転電気コネクタ
CN108538776B (zh) * 2018-03-29 2021-11-16 北京北方华创微电子装备有限公司 静电卡盘及其制造方法
WO2019245727A1 (en) 2018-06-22 2019-12-26 Applied Materials, Inc. Methods of minimizing wafer backside damage in semiconductor wafer processing
JP7134826B2 (ja) * 2018-10-11 2022-09-12 東京エレクトロン株式会社 静電チャックの生産方法
CN110158029B (zh) * 2019-07-05 2020-07-17 北京北方华创微电子装备有限公司 掩膜结构和fcva设备
KR20240021679A (ko) * 2021-06-14 2024-02-19 램 리써치 코포레이션 기판 운동 방지를 위한 전면 및 후면 압력 모니터링
CN117836899A (zh) * 2021-08-13 2024-04-05 阳光技术有限责任公司 用于如离子和同位素生产等高真空应用的磁旋转装置
KR20240090158A (ko) 2021-10-01 2024-06-21 샤인 테크놀로지스 엘엘씨 이온 수집을 위한 섬유질 격자를 갖는 이온 생성 시스템
JP2023176711A (ja) * 2022-05-31 2023-12-13 日本特殊陶業株式会社 基板保持部材
JP2025539558A (ja) * 2022-10-03 2025-12-05 エレベイテッド マテリアルズ ジャーマニー ゲーエムベーハー ウェブコーティング方法および一体型静電クランプを備えた換気冷却ドラム
US12600682B2 (en) 2022-11-11 2026-04-14 Applied Materials, Inc. Monolithic substrate support having porous features and methods of forming the same

Citations (6)

* Cited by examiner, † Cited by third party
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TW307031B (en) * 1996-05-08 1997-06-01 Applied Materials Inc Insulated wafer spacing mask for a substrate support chuck and method of fabricating same
CN101093811A (zh) * 2006-04-27 2007-12-26 应用材料股份有限公司 具有双温度区的静电吸盘的衬底支架
CN101283624A (zh) * 2005-10-06 2008-10-08 朗姆研究公司 具有径向温度控制能力的静电卡盘
CN101563770A (zh) * 2006-12-19 2009-10-21 艾克塞利斯科技公司 环状物抓持与背侧气体冷却的静电夹盘
CN102160167A (zh) * 2008-08-12 2011-08-17 应用材料股份有限公司 静电吸盘组件
WO2014149182A1 (en) * 2013-03-15 2014-09-25 Applied Materials, Inc. Methods and apparatus for electrostatic chuck repair and refurbishment

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US5646814A (en) * 1994-07-15 1997-07-08 Applied Materials, Inc. Multi-electrode electrostatic chuck
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP3859937B2 (ja) * 2000-06-02 2006-12-20 住友大阪セメント株式会社 静電チャック
KR100422444B1 (ko) * 2001-05-29 2004-03-12 삼성전자주식회사 정전 척에 설치되는 웨이퍼 공간 지지장치 및 그 제조방법
US6946403B2 (en) * 2003-10-28 2005-09-20 Axcelis Technologies, Inc. Method of making a MEMS electrostatic chuck
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US7697260B2 (en) * 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US7576018B2 (en) * 2007-03-12 2009-08-18 Tokyo Electron Limited Method for flexing a substrate during processing
WO2008112673A2 (en) * 2007-03-12 2008-09-18 Tokyo Electron Limited Dynamic temperature backside gas control for improved within-substrate processing uniformity
US7667944B2 (en) * 2007-06-29 2010-02-23 Praxair Technology, Inc. Polyceramic e-chuck
TWI475594B (zh) * 2008-05-19 2015-03-01 恩特格林斯公司 靜電夾頭
US8861170B2 (en) * 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
NL2009189A (en) * 2011-08-17 2013-02-19 Asml Netherlands Bv Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method.

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW307031B (en) * 1996-05-08 1997-06-01 Applied Materials Inc Insulated wafer spacing mask for a substrate support chuck and method of fabricating same
CN101283624A (zh) * 2005-10-06 2008-10-08 朗姆研究公司 具有径向温度控制能力的静电卡盘
CN101093811A (zh) * 2006-04-27 2007-12-26 应用材料股份有限公司 具有双温度区的静电吸盘的衬底支架
CN101563770A (zh) * 2006-12-19 2009-10-21 艾克塞利斯科技公司 环状物抓持与背侧气体冷却的静电夹盘
CN102160167A (zh) * 2008-08-12 2011-08-17 应用材料股份有限公司 静电吸盘组件
WO2014149182A1 (en) * 2013-03-15 2014-09-25 Applied Materials, Inc. Methods and apparatus for electrostatic chuck repair and refurbishment

Also Published As

Publication number Publication date
EP3254307B1 (en) 2022-03-02
TWI685916B (zh) 2020-02-21
KR102619126B1 (ko) 2023-12-27
JP6711838B2 (ja) 2020-06-17
CN107208261A (zh) 2017-09-26
EP3254307A4 (en) 2018-08-15
US20160230269A1 (en) 2016-08-11
WO2016126360A1 (en) 2016-08-11
KR20170110712A (ko) 2017-10-11
TW201637122A (zh) 2016-10-16
JP2018505561A (ja) 2018-02-22
EP3254307A1 (en) 2017-12-13

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Application publication date: 20220701