TW202006873A - 半導體晶圓處理中最小化晶圓背側損傷的方法 - Google Patents

半導體晶圓處理中最小化晶圓背側損傷的方法 Download PDF

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TW202006873A
TW202006873A TW108119439A TW108119439A TW202006873A TW 202006873 A TW202006873 A TW 202006873A TW 108119439 A TW108119439 A TW 108119439A TW 108119439 A TW108119439 A TW 108119439A TW 202006873 A TW202006873 A TW 202006873A
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艾比杜亞西斯 克哈嘉
胡良發
蘇德哈Ｓ 拉提
葛尼斯 巴拉蘇拔馬尼安
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美商應用材料股份有限公司
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Abstract

本揭露書一般關於用於半導體處理的基板支撐件。在一個實施例中，提供了基板支撐件。基板支撐件包括：主體，包含基板夾持表面；電極，設置在主體內；複數個基板支撐特徵，形成在基板夾持表面上，其中基板支撐特徵的數量從基板夾持表面的中心到基板夾持表面的邊緣徑向增加；及調節層，形成在複數個基板支撐特徵上，調節層包含氮化矽。

Description

半導體晶圓處理中最小化晶圓背側損傷的方法
本揭露書的實施例一般關於用於半導體處理的基板支撐件。
靜電夾盤在製造處理期間保持並支撐基板，而無需機械地夾持基板。在使用靜電夾盤期間，藉由靜電力將基板（諸如半導體晶圓）的背側保持在靜電夾盤的面上，靜電力由嵌入靜電夾盤的表面中的一或多個電極提供。靜電夾盤的表面可為平坦的，或可具有進一步升高基板以從基板移除熱量的一或多個突起、突出物或其他基板支撐特徵。
用以形成半導體裝置的層數和層厚度已增加。沉積在基板的正面上的增加的層可能導致在高處理溫度期間的基板的彎曲（亦即，基板在其直徑上的偏轉）。在微影蝕刻處理期間，基板的彎曲可能導致散焦或失焦問題。例如，在曝光期間，基板翹曲引起的焦點漂移負面地影響臨界尺寸（CD）的均勻性。習用的靜電夾盤不能充分地夾住基板的增加的偏轉部分，這是部分因為不能提供足夠強的夾持力或若使用高的夾持電壓則會電弧放電。另外，基板支撐特徵（如，突起或突出物）可能由於重複夾持或去夾持而磨損並且導致對基板的背側層或表面的損壞，這反過來損壞或以其他方式影響沉積在基板的正表面上的層。因此，存在有能夠解決這些問題的改進的靜電夾持裝置的需求。
本揭露書一般關於用於半導體處理的基板支撐件。在一個實施例中，提供了基板支撐件。基板支撐件包括陶瓷主體，陶瓷主體具有基板夾持表面。RF電極設置在陶瓷主體內。加熱元件嵌入陶瓷主體中。複數個基板支撐特徵形成在基板夾持表面上。基板支撐特徵的數量從基板夾持表面的中心到基板夾持表面的邊緣徑向增加。調節層形成在複數個基板支撐特徵上。調節層包括氮化矽、矽或氧化矽。
在另一實施例中，基板支撐件包括：主體，包含基板夾持表面，基板夾持表面具有內部區域和圍繞內部區域的外部區域；電極，設置在主體內；壁架，圍繞主體的周邊形成，壁架圍繞外部區域；及複數個基板支撐特徵，形成在基板夾持表面上，複數個基板支撐特徵具有在內部區域中的第一密度及在外部區域中的第二密度，其中第一密度與第二密度的比率為約4：1至約10：1。
在又一個實施例中，基板支撐件包括：主體，包含基板夾持表面；電極，設置在主體中；溫度控制裝置，設置在主體中；邊緣環，圍繞基板夾持表面的周邊設置；複數個基板支撐特徵，形成在基板夾持表面上，其中基板支撐特徵具有約1000或更大的總數，且基板支撐特徵的數量從基板夾持表面的中心到邊緣環徑向增加；及調節層，形成在複數個基板支撐特徵上，調節層包含氧化矽和氮化矽。
第1圖是其中具有基板支撐件140的示例性處理腔室100。處理腔室100通常包括蓋102和耦接到蓋102的腔室主體104，以在其中界定處理容積112。可通過蓋102而形成處理氣體入口114，用於將來自氣體源116的處理氣體提供到處理容積112中。替代地，處理氣體入口114可形成在腔室主體104中，以提供來自處理腔室100的側壁的側向處理氣體。在一些實施例中，可在蓋102和腔室主體104處形成一或多個處理氣體入口。軸106通過腔室主體104的底部中的開口110延伸到處理容積112中。軸106耦接到基板支撐件140並支撐基板支撐件140。功率源108通過軸106耦接到設置在基板支撐件140內的電極118。功率源108偏壓電極118以夾持基板W到基板支撐件140。在一個實例中，基板支撐件140是靜電夾盤。
基板W顯示為設置在基板支撐件140上。基板W可為諸如晶體矽（如，Si>100>或Si>111>）、氧化矽、應變矽、矽鍺、鍺、摻雜或未摻雜的多晶矽、摻雜或未摻雜的矽晶圓、圖案化或非圖案化的晶圓、絕緣體上矽（SOI）、碳摻雜的氧化矽、氮化矽、摻雜的矽、砷化鎵、玻璃或藍寶石的材料。基板W可具有各種尺寸，諸如200mm、300mm、450mm或其他直徑，且可為圓形、矩形或方形面板。基板W可具有形成在基板W的背側上的一或多個層，諸如氧化矽、氮化矽、非晶矽或其任何組合（統稱為背側層）。在一個實施例中，背側層是包括氮化矽、非晶矽和氧化矽的三層堆疊，其中氮化矽與基板的背側實體接觸。
基板支撐件140可與任何合適的處理腔室一起使用，包括未顯示的處理腔室。合適的處理腔室可包括（但不限於）沉積腔室或蝕刻腔室。示例性的沉積腔室可為化學氣相沉積（CVD）或電漿增強化學氣相沉積（PECVD）腔室。示例性的蝕刻腔室可為電漿蝕刻腔室。
第2圖是示例性基板支撐件200的橫截面圖。基板支撐件200可用作第1圖的基板支撐件140。基板支撐件200具有主體202。主體202由介電材料（諸如類似氧化鋁，或氮化鋁的陶瓷）製成。溫度控制裝置208可設置在主體202內，以將基板支撐件200加熱或冷卻到所期望的溫度。在一個實例中，溫度控制裝置208是電阻式加熱器。在另一個實施例中，溫度控制裝置208是適以使加熱或冷卻的流體（諸如空氣、氮氣、氦氣、水、乙二醇或類似者）流過的通道，以將熱量傳導到主體202及/或從主體202傳導熱量。溫度控制裝置208可將基板支撐件200的溫度升高到高於攝氏350度的溫度，諸如高於攝氏550度，例如，約攝氏650度。電極206也設置在主體202內。電極206耦合到功率源（諸如第1圖中的功率源108），功率源向其提供電荷，以將基板夾持到基板支撐件200上。如圖所示，電極206可在主體202的直徑上是單個部件或不連續的部分，形成單極或雙極夾盤任一者。儘管未顯示，但是可預期電極206可以任何圖案佈置，諸如網格、圓形、鋸齒形、蛇形等。
主體202具有基板夾持表面212。可圍繞主體202的周邊形成壁架216，以在其中界定基板夾持表面212。壁架216可具有約0.5mm至約10mm的寬度，例如約1mm至約5mm。壁架216在壁架216的徑向內側在主體202中界定凹槽218。複數個基板支撐特徵214設置在凹槽218中。基板支撐特徵214從凹槽218的表面向上延伸，以界定基板夾持表面212的內側區域222。基板支撐特徵214可為（例如）圓柱形凹坑、脊、半球形突起或類似者。在一個實施例中，基板支撐特徵214從凹槽218以約10μm至約50μm的高度延伸。基板支撐特徵214的頂表面和壁架216的頂表面可為共面的或者處於不同的高度。基板支撐特徵214可具有從約1mm至約6mm的直徑，諸如約2mm至約4mm。
在一些實施例中，省略了壁架216。相反地，邊緣環（未顯示）可設置在基板夾持表面212的周邊處。邊緣環可具有約10μm至約50μm的高度和約0.5mm至約10mm的寬度，例如約1mm至約5mm。在這種情況下，邊緣環界定在邊緣環的徑向內側的內側區域（諸如內側區域222），其中可設置基板支撐特徵214。
為了解決習用靜電夾盤的問題，提供了所揭露的基板支撐件的各種方式和特徵，以減少對基板的背側損壞。第3圖是基板支撐件200的俯視圖，顯示了根據本揭露書的實施例的基板夾持表面212。基板支撐特徵214被顯示為由壁架216圍繞。在一個實施例中，基板支撐特徵214的數量可增加到大於120，諸如約500或更大、諸如約800或更大，例如1000或更大，例如約1500至約2000。在基板支撐特徵214之間的最小距離可為約0.1mm至約0.5mm。藉由增加基板支撐特徵214的數量，可藉由增加數量的基板支撐特徵214來均勻地共享用於將基板夾持到基板夾持表面212的力。藉由這種方式，減少了由於重複的夾持和去夾持而對基板支撐特徵214造成的衝擊。因此，基板支撐特徵214不會快速磨損並在基板支撐特徵214的表面上形成尖銳的不規則性，這將導致對基板的背側層的損壞。
增加基板支撐特徵214的數量也是有益的，因為用於將基板夾持到基板夾持表面212的區域大大增加。在如圖所示的一個實施例中，基板支撐特徵214的數量（亦即，密度）在靠近壁架216的凹槽218的外部區域252處比在凹槽218的內部區域250處更大。也就是說，基板支撐特徵部214在基板支撐件200的基板夾持表面212的周邊處的每單位面積的數量大於在其內部區域處的數量。內部區域250被外部區域252圍繞。在一些實施例中，基板支撐特徵214的徑向分佈朝向基板夾持表面212的周邊比在其內部區域處更大。在第3圖所示的一個實施例中，基板支撐特徵214的數量從基板夾持表面212（或內部區域）的中心254朝壁架216（或外部區域252的外周邊）徑向向外增加。在不包括壁架的情況下，基板支撐特徵214的數量可從中心254朝基板夾持表面212的邊緣徑向向外增加。在任何情況下，施加到設置在基板夾持表面212上的基板的夾持力可在其外部區域252處增加，從而允許高度彎曲的基板（諸如1mm或更大的偏轉）被基板支撐件200保持（亦即，「夾持」）。這可顯著地改善夾持效能和有助於最小化在外部區域處夾持高彎曲基板所需的夾持電壓。由於增加數量的基板支撐特徵214降低了在外部區域252處所需的夾持電壓（亦即，較低的夾持力），因此可最小化對基板的背側層的損壞。
內部區域250具有徑向距離及外部區域252具有徑向距離，且內部區域250的徑向距離和外部區域252的徑向距離可為約1：1至約4：1的比率，例如約2：1至約3：1。在基板夾持表面212經配置以處理300mm基板的情況下，內部區域250的徑向距離可為約80mm至約115mm，例如約100mm，從基板夾持表面212的中心254測量。外部區域252的徑向距離可為約30mm至約65mm，例如約50mm，從內部區域250的外周邊到基板夾持表面212的邊緣測量（如，在基板夾持表面212和壁架216之間的界面）。外部區域252中的基板支撐特徵214的數量可具有第一密度（如，每單位面積的數量），且內部區域250中的基板支撐特徵214的數量可具有第二密度。在一些實施例中，第一密度與第二密度的比率可為約1：1或更高，例如約2：1或更高，諸如約4：1至約10：1。
基板支撐特徵214可佈置成如第3圖所示的同心圓。還可預期基板支撐特徵214的其他佈置。例如，基板支撐特徵214可以徑向距離增加直徑的圖案佈置，或反之亦然。也就是說，基板支撐特徵214可具有從基板夾持表面212的中心254到邊緣在徑向向外方向上逐漸增加的直徑。這種方式可與這份揭露書中描述的任何實施例結合，以提供在外部區域252處大於內部區域250的更高的夾持力。
所揭露的支撐件200可附加地或替代地包括其他特徵，以減少對基板的背側層的損壞。例如，已經觀察到基板夾持表面212上的尖銳不規則性可能穿透背側層並損壞基板的前表面和沉積在其上的層。降低基板支撐特徵214的平均表面粗糙度（Ra）可使基板夾持表面212上接觸基板的背側的任何不規則粗糙度最小化，從而減少對基板的背側層的損壞。在各種實施例中，基板支撐特徵214可具有約65μm或更小的Ra，諸如約50μm或更小，例如1μm至約40μm。在一個實施例中，基板支撐特徵214的Ra為約15μm至約20μm。
在一些實施例中，調節層可沉積在至少基板支撐特徵214上，以保護基板的背側層免受基板夾持表面212上發現的任何不規則性的損壞。第4圖是放大圖，顯示在支撐基板W之前的基板支撐特徵214的一部分。調節層400形成在基板支撐特徵214的表面上。調節層400可共形地形成在基板支撐特徵214的曝露表面上。替代地，調節層400可選擇性地形成在基板支撐特徵214的頂表面上，而不進入在基板支撐特徵214之間的低凹處。在一些情況下，調料層400可延伸以覆蓋壁架216及/或整個基板夾持表面212（第2圖）。調節層400可具有當接觸基板時對背側層的衝擊最小化的硬度。例如，調節層400可具有在約2GPa至約50GPa的範圍中的硬度，例如約5GPa至約30GPa。合適的材料可包括（但不限於）矽、氮化矽、氧化矽、碳摻雜的氧化矽（SiOC）、碳化矽（SiC）、含氮的碳化矽（SiCN）、氧化鋁、氮化鋁、未摻雜的矽玻璃（USG）（諸如氧化矽、硼矽酸鹽玻璃（BSG）、磷矽酸鹽玻璃（PSG）或硼磷矽酸鹽玻璃（BPSG）），或其任何組合。也可使用其他材料，諸如彼等具有較低硬度且不會因曝露於基板的處理中使用的化學物質而劣化的材料。
調節層400可為上面列出的單層材料或包括上面列出的材料的任何結合的層堆疊。在一個實施例中，調節層400是包括氧化矽和氮化矽的雙層堆疊，其可以任何順序排列。在另一個實施例中，調節層400是包括USG和氮化矽的雙層堆疊，其可以任何順序排列。在又一個實施例中，調節層400是SiCN。可預期藉由在調節處理期間改變調節材料和沉積溫度，可調整或調制調節層影響調節層400的硬度。當選擇調節材料時，也可考慮其他因素，諸如介電常數、擊穿電壓和缺陷效能。
在上述任何實施例中，調節層400可具有約0.3μm至約10μm的厚度。在一個實施例中，調節層400原位形成且具有約0.5μm或更高的厚度，例如約1μm或更高，諸如約1.2μm至約3.5μm。在一個實例中，調節層400具有約1μm的厚度。在調節層400包括氮化矽和USG的一個示例性實例中，調節層400的總厚度可為0.5μm或1μm。在調節層400是USG的另一示例性實例中，調節層400的總厚度為1μm。在調節層400是SiCN的又一示例性實例中，調節層400的總厚度為1μm。在任何情況下，選擇調節層400的厚度以允許基板支撐特徵214的Ra轉移到調節層400。因此，調節層400可具有與基板支撐特徵214的Ra基本上相同的Ra。另外，由於調節層400改善了基板夾持表面212對曝露於處理化學物質的劣化的抵抗力，基板支撐特徵214的Ra可比沒有調節層形成的習知設計維持更長時間，從而改善基板支撐件200在高溫（諸如高於攝氏550度，例如約攝氏650度）下夾住高度彎曲基板的能力。
調節層400可在基板的每個處理操作之間一次形成或原位形成，諸如腔室的清潔循環的一部分。此外，調節層400可在基板支撐件200操作的相同腔室內原位形成，或在不同的腔室中形成。調節層400可週期性地重新施加到基板夾持表面212，或者至少基板支撐特徵214的表面。例如，在已經處理批量中的預定數量的基板（如，利用膜沉積或蝕刻處理）之後，可將調節層400重新施加到基板夾持表面212上。預定數量可為約400個基板或更多，諸如約1000個基板或更多，例如約2000個基板至約4000個基板。
除了於此描述的任何方式之外，可增加背側層402的總厚度，以減少由基板支撐特徵214引起的損壞。也就是說，背側層的總厚度可增加到防止基板支撐特徵214穿過背側層。穿過較厚的背側層需要較大的力，及在基板支撐特徵214的表面上的尖銳特徵。在這種情況下，調節層400可為任選的。在一個實施例中，背側層（如，多層氧化矽、非晶矽和氮化矽）的總厚度可從約0.1μm的習用厚度增加到約1μm或更大的厚度，諸如約2μm至約10μm。預期這種方式可單獨調整，或與本揭露書中描述的一或多個實施例一起調整。
在可與於此所述的任一或多個實施例結合的一個實施例中，基板支撐件200可經設計成具有特定的效能參數，以改善其夾持能力。在一個實例中，主體202經設計成具有介於在約250毫安和約50毫安之間的漏電流。藉由限制基板支撐件200的漏電流，由此提供的夾持力的均勻性顯著增加，從而提高了基板處理的品質。
在可與於此所述的任一或多個實施例結合的一個實施例中，主體202可具有相對於其工作溫度的所需電阻率，諸如在約0.1×1010 Ohm-cm和約1.0×1011 Ohm-cm之間的電阻率。例如，主體202可經設計成在約攝氏550度時具有在約0.1×1010 Ohm-cm和約1.0×1011 Ohm-cm之間的電阻率，諸如在約0.8×1010 Ohm-cm和約7×1010 Ohm-cm之間。藉由增加電阻率，提供足夠的夾持力所需的電壓降低，從而防止電漿的電弧放電。在另一個實例中，主體202可經設計以在約攝氏350度時具有約0.1×1010 Ohm-cm和約1.0×1011 Ohm-cm之間的電阻率，諸如在約0.2×1010 Ohm-cm和約5×1010 Ohm-cm之間。增加電阻率導致在較低溫度（諸如攝氏650度或更低，例如約攝氏550度或更低）下更好的夾持效能。
揭露了各種方式來消除或最小化對基板的背側層的損壞。這些方式包括在至少基板支撐特徵上形成調節層、改變基板支撐特徵的表面粗糙度（Ra）（並因此改變沉積在其上的調節層的Ra）、增加基板背側層的厚度、增加支撐特徵的數量、增加在基板夾持表面的外部區域處的基板支撐特徵的密度及降低夾持電壓等。這些方式提供對基板支撐特徵的劣化的抵抗力並防止背側損壞穿透背側層和損壞沉積在基板的前側上的層。因此，可防止或最小化如在先前技術中所論述的微影蝕刻處理期間的焦點漂移問題，從而改善基板上的特徵的CD均勻性。
儘管前述內容涉及本揭露書的實施例，但是可在不背離本揭露書的基本範圍的情況下設計本揭露書的其他和進一步的實施例。
100‧‧‧處理腔室 102‧‧‧蓋 104‧‧‧腔室主體 106‧‧‧軸 108‧‧‧功率源 110‧‧‧開口 112‧‧‧處理容積 114‧‧‧處理氣體入口 116‧‧‧氣源 118‧‧‧電極 140‧‧‧基板支撐件 200‧‧‧基板支撐件 202‧‧‧主體 206‧‧‧電極 208‧‧‧溫度控制裝置 212‧‧‧基板夾持表面 214‧‧‧基板支撐特徵 216‧‧‧壁架 218‧‧‧凹槽 222‧‧‧內側區域 250‧‧‧內部區域 252‧‧‧外部區域 254‧‧‧中心 400‧‧‧調節層 402‧‧‧背側層
因此，可詳細地理解本揭露書的以上所載的特徵的方式，可藉由參考實施例獲得上面簡要概述的本揭露書的更具體的描述，其中一些實施例顯示在附隨的圖式中。然而，應注意附隨的圖式僅顯示了示例性實施例，且因此不應視為限制其範圍，因為本揭露書可允許其他同等有效的實施例。
第1圖是根據本揭露書的實施例的處理腔室的示意性佈置。
第2圖是根據本揭露書的實施例的示例性基板支撐件的橫截面。
第3圖是第2圖的基板支撐件的俯視圖。
第4圖是顯示根據本揭露書的實施例的待支撐的支撐特徵的基板的一部分的放大視圖。
為促進理解，在可能的情況下，使用相同的元件符號來表示共用於圖式的相同元件。可預期的是一個實施例的元件和特徵可有利地併入其他實施例中而無需進一步敘述。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
200‧‧‧基板支撐件
202‧‧‧主體
206‧‧‧電極
208‧‧‧溫度控制裝置
212‧‧‧基板夾持表面
214‧‧‧基板支撐特徵
216‧‧‧壁架
218‧‧‧凹槽
222‧‧‧內側區域

Claims (20)

  1. 一種基板支撐件，包含： 一陶瓷主體，包含一基板夾持表面；一RF電極，設置在該陶瓷主體內；一加熱元件，嵌入該陶瓷主體中；複數個基板支撐特徵，形成在該基板夾持表面上，其中該基板支撐特徵的數量從該基板夾持表面的一中心到該基板夾持表面的一邊緣徑向增加；以及一調節層，形成在該複數個基板支撐特徵上，該調節層包含氮化矽、矽或氧化矽。
  2. 如請求項1所述之基板支撐件，其中該複數個基板支撐特徵的總數為約1000或更大。
  3. 如請求項1所述之基板支撐件，其中該複數個基板支撐特徵以多個同心圓的方式佈置。
  4. 如請求項1所述之基板支撐件，其中該複數個基板支撐特徵具有約65μm或更小的一平均表面粗糙度（Ra）。
  5. 如請求項1所述之基板支撐件，其中該複數個基板支撐特徵的該Ra為約15μm至約20μm。
  6. 如請求項1所述之基板支撐件，其中該調節層具有約5GPa至約30GPa的一範圍中的的一硬度。
  7. 如請求項1所述之基板支撐件，其中該調節層是氮化矽。
  8. 如請求項1所述之基板支撐件，其中該調節層進一步包含未摻雜的矽玻璃（USG）。
  9. 如請求項1所述之基板支撐件，其中該調節層具有約0.5μm至約1.2μm的一厚度。
  10. 一種基板支撐件，包含： 一主體，包含一基板夾持表面，該基板夾持表面具有一內部區域和圍繞該內部區域的一外部區域；一電極，設置在該主體內；一壁架，圍繞該主體的一周邊形成，該壁架圍繞該外部區域；以及複數個基板支撐特徵，形成在該基板夾持表面上，該複數個基板支撐特徵具有在該內部區域中的一第一密度及在該外部區域中的一第二密度，其中該第一密度與該第二密度的一比率為約4：1至約10：1。
  11. 如請求項10所述之基板支撐件，其中該內部區域具有一第一徑向距離及該外部區域具有一第二徑向距離，且該第一徑向距離與該第二徑向距離的一比率為約2：1至約3：1。
  12. 如請求項10所述之基板支撐件，其中該複數個基板支撐特徵的總數為約1000或更大。
  13. 如請求項10所述之基板支撐件，其中該複數個基板支撐特徵以多個同心圓的方式佈置。
  14. 如請求項10所述之基板支撐件，其中該複數個基板支撐特徵具有約15μm至約20μm的一平均表面粗糙度（Ra）。
  15. 如請求項10所述之基板支撐件，進一步包含： 一調節層，形成在該複數個基板支撐特徵上，其中該調節層包含矽、氮化矽、氧化矽、碳摻雜氧化矽（SiOC）、碳化矽（SiC）、含氮碳化矽（SiCN）、氧化鋁、氮化鋁、未摻雜的矽玻璃（USG）、硼矽酸鹽玻璃（BSG）、磷矽酸鹽玻璃（PSG）、硼磷矽酸鹽玻璃（BPSG）或其任何組合。
  16. 如請求項15所述之基板支撐件，其中該調節層是包括氧化矽和氮化矽的一雙層堆疊。
  17. 如請求項10所述之基板支撐件，其中該複數個基板支撐特徵的每個特徵具有約1mm至約6mm的一直徑和約10μm至約50μm的一高度。
  18. 一種基板支撐件，包含： 一主體，包含一基板夾持表面；一電極，設置在該主體中；一溫度控制裝置，設置在該主體中；一邊緣環，圍繞該基板夾持表面的一周邊設置；複數個基板支撐特徵，形成在該基板夾持表面上，其中該基板支撐特徵具有約1000或更大的總數，且該基板支撐特徵的數量從該基板夾持表面的一中心到該邊緣環徑向增加；以及一調節層，形成在該複數個基板支撐特徵上，該調節層包含一氧化矽和氮化矽。
  19. 如請求項18所述之基板支撐件，其中該複數個基板支撐特徵的每個特徵具有約1mm至約6mm的一直徑和約10μm至約50μm的一高度。
  20. 如請求項18所述之基板支撐件，其中該調節層進一步包含矽、碳摻雜氧化矽（SiOC）、碳化矽（SiC）、含氮碳化矽（SiCN）、氧化鋁、氮化鋁、未摻雜的矽玻璃（USG）、硼矽酸鹽玻璃（BSG）、磷矽酸鹽玻璃（PSG）、硼磷矽酸鹽玻璃（BPSG）或其任何組合。
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