CN114664958A - 一种同侧电极InGaAs背光监控探测器及其制作方法 - Google Patents
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Abstract
本发明涉及一种同侧电极InGaAs背光监控探测器及其制作方法,该探测器包括InP衬底,所述InP衬底上设有N型InP层,所述N型InP层上第一区域设有非故意掺杂本征I‑InGaAs层,第二区域设有N电极,所述I‑InGaAs层上设有InP窗口层,所述InP窗口层光敏区利用Zn扩散掺杂,形成Zn扩散区,其余部分为非故意掺杂U‑InP区域,所述Zn扩散区上中部设有抗反射层,所述抗反射层外周部设有Zn扩散掺杂的InGaAs接触层,所述Zn扩散区以外部分设有钝化层,所述钝化层上设有P电极。该探测器易于制造,成品率高,封装成本低。
Description
技术领域
本发明属于光通讯技术领域,具体涉及一种同侧电极InGaAs背光监控探测器及其制作方法。
背景技术
在现有技术中,常规监控PD(MPD)正面由光敏面、P电极、钝化层和切割区域组成,背面由N电极覆盖。常规MPD采用垂直封装形式,边发射激光器(LD)背面出射光束照射到MPD光敏区,光敏区吸收光,转换为光电流,实现激光器背光功率监控。由于MPD N电极在芯片背面,无法直接打线。因此,MPD在使用过程中需要首先利用导电银胶固定到一个正面镀金的垫块上,N电极打线打在垫块上的镀金区域。现有结构存在的缺点是:1)由于异面电极构型,在实际使用过程中需要搭配垫块使用,不仅增加了材料成本也增加了固晶步骤,降低了产能;2)整个晶圆共用N型电极,芯片在晶圆级测试过程中无法识别N型欧姆接触异常芯粒,有电性异常芯粒漏出风险;3)晶圆减薄后需进行背面N型电极蒸镀,背面金属与InP衬底粘附性较差,易于出现背金脱落现象;4)背面N型电极欧姆接触需要进行退火工序,并且只能以减薄的晶圆片形式进行,有破片风险,导致片源报废。
发明内容
本发明的目的在于提供一种同侧电极InGaAs背光监控探测器及其制作方法,该探测器易于制造,成品率高,封装成本低。
为实现上述目的,本发明采用的技术方案是:一种同侧电极InGaAs背光监控探测器,包括InP衬底,所述InP衬底上设有N型InP层,所述N型InP层上第一区域设有非故意掺杂本征I-InGaAs层,第二区域设有N电极,所述I-InGaAs层上设有InP窗口层,所述InP窗口层光敏区利用Zn扩散掺杂,形成Zn扩散区,其余部分为非故意掺杂U-InP区域,所述Zn扩散区上中部设有抗反射层,所述抗反射层外周部设有Zn扩散掺杂的InGaAs接触层,所述Zn扩散区以外部分设有钝化层,所述钝化层上设有P电极。
进一步地,所述InP衬底为N型InP或半绝缘InP衬底。
进一步地,所述钝化层由SiNx、SiOx或其他组合的电介质膜组成。
进一步地,所述探测器厚度大于200um,且为同侧电极,所述探测器直接贴在管座上使用,无需设置垫块。
本发明还提供了上述同侧电极InGaAs背光监控探测器的制作方法,包括以下步骤:
1)在InP衬底上采用金属有机物化学气象沉积技术或分子束外延技术依次生长N型InP层、非故意掺杂本征I-InGaAs层、非故意掺杂U-InP层以及非故意掺杂U-InGaAs接触层;
2)利用光刻及湿法刻蚀技术将部分U-InGaAs接触层去除,只留下光敏区周部环状部分,用来形成欧姆接触;
3)利用PECVD技术在U-InP和U-InGaAs上方生长SiNx或SiO2掩膜层,并利用光刻及干法刻蚀技术将光敏区掩膜层去除;
4)利用Zn扩散技术对光敏区进行扩散掺杂,并进行快速热退火激活载流子;
5)利用光刻、干法刻蚀及湿法刻蚀技术,将N型电极区域的掩膜层,U-InP及I-InGaAs层去除,直到N型InP层;
6)利用PECVD技术生长SiNx层,该层在光敏区起到抗反射作用,并利用光刻及干法刻蚀技术将InGaAs接触层上方SiNx层去除,同时也将N型欧姆接触区域SiNx层去除,以便形成N型及P型接触窗口;
7)利用光刻、电子束蒸镀及金属剥离技术形成N型及P型欧姆接触及N型及P型电极部分,并进行快速热退火处理,形成良好的欧姆接触;
8)将晶圆键合到蓝宝石或其他透明基板上,利用研磨技术对InP衬底背面进行减薄处理至设定厚度;
9)利用双面光刻及湿法刻蚀技术在晶圆背面制作切割对位标记;
10)利用切割技术在InP衬底背面进行切割,并将蓝宝石基板去除;
11)进行测试、划片、裂片及外观检验。
进一步地,所述步骤10)中,切割后衬底剩余厚度为100-170um。
与现有技术相比,本发明具有以下有益效果:提供了一种同侧电极InGaAs背光监控探测器及其制作方法,该探测器采用同侧电极结构,并且厚度较厚,不用搭配垫片使用,节省封装成本;且由于采用同侧电极结构,无背面N型电极,没有背金脱落风险,并且不需要薄片退火工序,破片风险低。同时,每个芯粒都有N电极和P电极,在晶圆级测试过程中可以准确识别N型欧姆接触异常芯粒,没有电性异常芯粒漏出风险。此外,该探测器的衬底除了可以采用N型衬底外,还可以选择半绝缘衬底,可满足不同场合MPD衬底绝缘的要求。
附图说明
图1是本发明实施例的正面结构示意图;
图2是本发明实施例的剖面结构示意图;
图3是本发明实施例的封装结构示意图;
图4是本发明实施例的制作过程示意图。
具体实施方式
下面结合附图及实施例对本发明做进一步说明。
应该指出,以下详细说明都是示例性的,旨在对本申请提供进一步的说明。除非另有指明,本文使用的所有技术和科学术语具有与本申请所属技术领域的普通技术人员通常理解的相同含义。
需要注意的是,这里所使用的术语仅是为了描述具体实施方式,而非意图限制根据本申请的示例性实施方式。如在这里所使用的,除非上下文另外明确指出,否则单数形式也意图包括复数形式,此外,还应当理解的是,当在本说明书中使用术语“包含”和/或“包括”时,其指明存在特征、步骤、操作、器件、组件和/或它们的组合。
如图1、2所示,本实施例提供了一种同侧电极InGaAs背光监控探测器,包括InP衬底1,所述InP衬底1上设有N型InP层2,所述N型InP层2上第一区域设有非故意掺杂本征I-InGaAs层3,第二区域设有N电极10,所述I-InGaAs层3上设有InP窗口层,所述InP窗口层光敏区利用Zn扩散掺杂,形成Zn扩散区4,其余部分为非故意掺杂U-InP区域5,所述Zn扩散区4上中部设有抗反射层6,所述抗反射层6外周部设有Zn扩散掺杂的InGaAs接触层7,所述Zn扩散区4以外部分设有钝化层8,所述钝化层8上设有P电极9。其中,钝化层由SiNx、SiOx或其他组合的电介质膜组成。
在本实施例中,探测器厚度等于垫片与常规MPD芯片厚度之和,厚度大于200um。由于探测器厚度较厚,且是同侧电极,因此,可以直接贴在管座上使用,无需设置垫块,如图3所示。
在本实施例中,所述InP衬底采用N型InP衬底。在其他实施例中,衬底也可以采用半绝缘(SI)InP衬底。
如图4所示,本实施例提高了上述同侧电极InGaAs背光监控探测器的制作方法,包括以下步骤:
1)在衬底上采用金属有机物化学气象沉积技术或分子束外延技术依次生长N型InP层、非故意掺杂本征I-InGaAs层、非故意掺杂U-InP层以及非故意掺杂U-InGaAs接触层;
2)利用光刻及湿法刻蚀技术将部分U-InGaAs接触层去除,只留下光敏区周部环状部分,用来金属形成欧姆接触;
3)利用PECVD技术在U-InP和U-InGaAs上方生长SiNx或SiO2掩膜层,并利用光刻及干法刻蚀技术将光敏区掩膜层去除;
4)利用Zn扩散技术对光敏区进行扩散掺杂,并进行快速热退火激活载流子;
5)利用光刻、干法刻蚀及湿法刻蚀技术,将N型电极区域的掩膜层,U-InP及I-InGaAs层去除,直到N型InP层;
6)利用PECVD技术生长SiNx层,该层在光敏区起到抗反射作用,并利用光刻及干法刻蚀技术将InGaAs接触层上方SiNx层去除,同时也将N型欧姆接触区域SiNx层去除,以便形成N型及P型接触窗口
7)利用光刻、电子束蒸镀及金属剥离技术形成N型及P型欧姆接触及N型及P电极部分,并进行快速热退火处理,形成良好的欧姆接触;
8)将晶圆键合到蓝宝石或其他透明基板上,利用研磨技术对InP衬底背面进行减薄处理至设定厚度;
9)利用双面光刻及湿法刻蚀技术在InP衬底背面制作切割对位标记;
10)利用切割技术在InP衬底背面进行切割,切割后衬底剩余厚度为100-170um,并将蓝宝石基板去除;
11)进行测试、划片、裂片及外观检验。
以上所述,仅是本发明的较佳实施例而已,并非是对本发明作其它形式的限制,任何熟悉本专业的技术人员可能利用上述揭示的技术内容加以变更或改型为等同变化的等效实施例。但是凡是未脱离本发明技术方案内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与改型,仍属于本发明技术方案的保护范围。
Claims (6)
1.一种同侧电极InGaAs背光监控探测器,其特征在于,包括InP衬底,所述InP衬底上设有N型InP层,所述N型InP层上第一区域设有非故意掺杂本征I-InGaAs层,第二区域设有N电极,所述I-InGaAs层上设有InP窗口层,所述InP窗口层光敏区利用Zn扩散掺杂,形成Zn扩散区,其余部分为非故意掺杂U-InP区域,所述Zn扩散区上中部设有抗反射层,所述抗反射层外周部设有Zn扩散掺杂的InGaAs接触层,所述Zn扩散区以外部分设有钝化层,所述钝化层上设有P电极。
2.根据权利要求1所述的一种同侧电极InGaAs背光监控探测器,其特征在于,所述InP衬底为N型InP或半绝缘InP衬底。
3.根据权利要求1所述的一种同侧电极InGaAs背光监控探测器,其特征在于,所述钝化层由SiNx、SiOx或其他组合的电介质膜组成。
4.根据权利要求1所述的一种同侧电极InGaAs背光监控探测器,其特征在于,所述探测器厚度大于200um,且为同侧电极,所述探测器直接贴在管座上使用,无需设置垫块。
5.一种如权利要求1-4任一项所述同侧电极InGaAs背光监控探测器的制作方法,其特征在于,包括以下步骤:
1)在InP衬底上采用金属有机物化学气象沉积技术或分子束外延技术依次生长N型InP层、非故意掺杂本征I-InGaAs层、非故意掺杂U-InP层以及非故意掺杂U-InGaAs接触层;
2)利用光刻及湿法刻蚀技术将部分U-InGaAs接触层去除,只留下光敏区周部环状部分,用来形成欧姆接触;
3)利用PECVD技术在U-InP和U-InGaAs上方生长SiNx或SiO2掩膜层,并利用光刻及干法刻蚀技术将光敏区掩膜层去除;
4)利用Zn扩散技术对光敏区进行扩散掺杂,并进行快速热退火激活载流子;
5)利用光刻、干法刻蚀及湿法刻蚀技术,将N型电极区域的掩膜层,U-InP及I-InGaAs层去除,直到N型InP层;
6)利用PECVD技术生长SiNx层,该层在光敏区起到抗反射作用,并利用光刻及干法刻蚀技术将InGaAs接触层上方SiNx层去除,同时也将N型欧姆接触区域SiNx层去除,以便形成N型及P型接触窗口;
7)利用光刻、电子束蒸镀及金属剥离技术形成N型及P型欧姆接触及N型及P型电极部分,并进行快速热退火处理,形成良好的欧姆接触;
8)将晶圆键合到蓝宝石或其他透明基板上,利用研磨技术对InP衬底背面进行减薄处理至设定厚度;
9)利用双面光刻及湿法刻蚀技术在晶圆背面制作切割对位标记;
10)利用切割技术在InP衬底背面进行切割,并将蓝宝石基板去除;
11)进行测试、划片、裂片及外观检验。
6.根据权利要求5所述的一种同侧电极InGaAs背光监控探测器的制作方法,其特征在于,所述步骤10)中,切割后衬底剩余厚度为100-170um。
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