CN114641869A - 发光二极管器件、显示面板、显示装置和制作方法 - Google Patents
发光二极管器件、显示面板、显示装置和制作方法 Download PDFInfo
- Publication number
- CN114641869A CN114641869A CN202080001652.0A CN202080001652A CN114641869A CN 114641869 A CN114641869 A CN 114641869A CN 202080001652 A CN202080001652 A CN 202080001652A CN 114641869 A CN114641869 A CN 114641869A
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- substrate
- layer
- light emitting
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000010410 layer Substances 0.000 claims abstract description 235
- 239000002096 quantum dot Substances 0.000 claims abstract description 198
- 239000000758 substrate Substances 0.000 claims abstract description 177
- 239000003446 ligand Substances 0.000 claims abstract description 81
- 239000000376 reactant Substances 0.000 claims abstract description 37
- 239000002346 layers by function Substances 0.000 claims abstract description 36
- 238000010560 atom transfer radical polymerization reaction Methods 0.000 claims abstract description 27
- 238000012546 transfer Methods 0.000 claims description 50
- 238000006243 chemical reaction Methods 0.000 claims description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 12
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 12
- 230000004048 modification Effects 0.000 claims description 11
- 238000012986 modification Methods 0.000 claims description 11
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 claims description 10
- 230000005525 hole transport Effects 0.000 claims description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 9
- 239000011787 zinc oxide Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- -1 polydimethylsiloxane Polymers 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 claims description 5
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 4
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 4
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 4
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims description 4
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000005642 Oleic acid Substances 0.000 claims description 4
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims description 4
- 229940045803 cuprous chloride Drugs 0.000 claims description 4
- 230000000977 initiatory effect Effects 0.000 claims description 4
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 4
- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 claims description 4
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 4
- 230000003381 solubilizing effect Effects 0.000 claims description 4
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 84
- 239000000243 solution Substances 0.000 description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000009987 spinning Methods 0.000 description 3
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 2
- 238000010023 transfer printing Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 125000005396 acrylic acid ester group Chemical group 0.000 description 1
- 150000001335 aliphatic alkanes Chemical group 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/14—Macromolecular compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
本公开实施例提供一种发光二极管器件、显示面板、显示装置和制作方法,所述发光二极管器件包括:衬底基板(1);第一电极(2),位于所述衬底基板(1)的一侧;载流子功能层(3),位于所述第一电极(2)的背离所述衬底基板(1)的一侧;量子点发光层(4),位于所述载流子功能层(3)的背离所述第一电极(2)的一侧,所述量子点发光层(4)内部具有分子链结构,其中,所述分子链结构由第一反应物和修饰分子发生原子转移自由基聚合反应形成,所述第一反应物通过所述配体分子A与所述修饰分子发生原子转移自由基聚合反应,所述修饰分子初始状态为连接于所述载流子功能层(3)面向所述量子点发光层(4)的一面;第二电极(5),位于所述量子点发光层(4)的背离所述载流子功能层(3)的一侧。
Description
PCT国内申请,说明书已公开。
Claims (28)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2020/110338 WO2022036652A1 (zh) | 2020-08-20 | 2020-08-20 | 发光二极管器件、显示面板、显示装置和制作方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN114641869A true CN114641869A (zh) | 2022-06-17 |
Family
ID=80323345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202080001652.0A Pending CN114641869A (zh) | 2020-08-20 | 2020-08-20 | 发光二极管器件、显示面板、显示装置和制作方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11877461B2 (zh) |
CN (1) | CN114641869A (zh) |
WO (1) | WO2022036652A1 (zh) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105552241B (zh) * | 2016-01-13 | 2017-11-03 | 京东方科技集团股份有限公司 | 可交联量子点及其制备方法、阵列基板及其制备方法 |
CN105514302B (zh) * | 2016-01-26 | 2017-07-18 | 京东方科技集团股份有限公司 | 量子点发光二极管亚像素阵列、其制造方法以及显示装置 |
CN106654068B (zh) * | 2017-01-20 | 2018-10-02 | 京东方科技集团股份有限公司 | 一种有机电致发光器件的制作方法及相应装置 |
KR102354900B1 (ko) * | 2017-09-12 | 2022-01-21 | 엘지디스플레이 주식회사 | 양자점 발광다이오드 및 이를 포함하는 양자점 발광장치 |
CN109728203B (zh) * | 2017-10-30 | 2020-07-07 | Tcl科技集团股份有限公司 | 量子点转印方法 |
CN114058373A (zh) * | 2020-07-31 | 2022-02-18 | 京东方科技集团股份有限公司 | 量子点结构、量子点发光器件和制作方法 |
-
2020
- 2020-08-20 CN CN202080001652.0A patent/CN114641869A/zh active Pending
- 2020-08-20 US US17/296,839 patent/US11877461B2/en active Active
- 2020-08-20 WO PCT/CN2020/110338 patent/WO2022036652A1/zh active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US11877461B2 (en) | 2024-01-16 |
US20230354630A1 (en) | 2023-11-02 |
WO2022036652A1 (zh) | 2022-02-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106816512B (zh) | 一种发光二极管显示基板及其制作方法、显示器 | |
CN102569340B (zh) | 有机发光显示设备及其制造方法 | |
CN102487071B (zh) | 有机发光显示装置及其制造方法 | |
TW490997B (en) | Method of manufacturing organic EL element, and organic EL element | |
US9564605B2 (en) | Transparent display devices including a polymer substrate comprising colored particles with improved flexible and mechanical properties | |
JP2006512744A (ja) | 低圧冷間溶接によるデバイス製造方法 | |
US11530350B2 (en) | Ligand and method of manufacturing the same, quantum dot film and method of manufacturing the same, and display apparatus | |
KR101138869B1 (ko) | 유기발광 디스플레이의 단위 화소부 구동소자의 제조방법 | |
CN102544386B (zh) | 有机发光显示设备及其制造方法 | |
CN110098222A (zh) | 有机发光显示设备及其制造方法 | |
US11795386B2 (en) | Method for patterning nanoparticle layer, quantum dot light emitting device and display device all fees | |
CN110003191B (zh) | 相变光学异构体化合物、透明电致发光显示装置及制造透明电致发光显示装置的方法 | |
CN112018250B (zh) | 量子点电致发光器件及制作方法、显示装置 | |
JP2004087458A (ja) | 薄膜トランジスタと発光ダイオードに用いる有機集積デバイス及びその製造方法 | |
JP2004274015A (ja) | フォトレジスト層のマイクログルーブに従って配列された半導体層を含む有機装置 | |
TW201023673A (en) | Image displaying device, image displaying system, and methods for fabricating the same | |
CN115411215A (zh) | 一种转移高质量的金属卤化物钙钛矿薄膜及纳米结构的方法 | |
CN103770429A (zh) | 薄膜层压装置及利用它的有机发光显示装置的制造方法 | |
CN114641869A (zh) | 发光二极管器件、显示面板、显示装置和制作方法 | |
JP4684543B2 (ja) | 分子配列を有する有機半導体層の製造方法 | |
TWI620473B (zh) | 提供無邊框撓性顯示器電連接之構件 | |
CN113471223A (zh) | 显示基板及显示装置 | |
TWI308805B (en) | Active matrix oled and fabricating method incorporating the same | |
CN113109974A (zh) | 一种量子点器件及其制备方法 | |
JP7508376B2 (ja) | 量子ドット電界発光デバイス及び製造方法、表示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |