CN114611456A - Method for simulating single-particle transient response of nano device under particle incidence - Google Patents
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Abstract
The invention belongs to the field of semiconductor device single event effect simulation, and particularly relates to a method for simulating nanometer device single event transient response under particle incidence. The problem that the single-particle transient response of the nanometer device to different particles cannot be accurately obtained based on the traditional numerical simulation is solved. According to the invention, charge density distribution calculated by Geant4 simulation is used as a heavy ion parameter and introduced into a nanometer device model for device single event effect simulation, and single event transient response of incident particles generated in the device is obtained. Compared with the traditional TCAD simulation method which only can compare the influence of LET values on the single-particle transient state of the device, the method can directly compare the influence of energy and particle type change on the single-particle transient state of the device. Meanwhile, the method discovers that different particles have the same LET value for the nanometer device through simulation, and the single particle transient response difference is larger due to different radial distribution of the particles. Therefore, the radiation effect of the device under different radiation environments can be more accurately evaluated by using the method.
Description
Technical Field
The invention belongs to the field of semiconductor device single event effect simulation, and particularly relates to a numerical simulation method for accurately simulating nanometer device single event transient response under particle incidence.
Background
With the development of integrated circuits, an aerospace electronic system gradually adopts nanometer devices (the characteristic size of a transistor is smaller than 100nm), and the reliability of the aerospace nanometer devices can be seriously influenced by a single event effect. The single event effect ground research of the prior device mainly adopts an accelerator heavy ion experimental simulation and a numerical simulation method. The accelerator heavy ion experiment simulation is limited by particle energy and types due to high cost, and the heavy ion accelerator has limited time, so that all experiment requirements cannot be met. The numerical simulation method can make up the defects of heavy ion experiments, and is an important way for researching the single event effect of the device.
In the traditional single event effect numerical simulation, only the equivalent LET value of incident particles in a Si material is considered, and the radial distribution of LET is approximate to two types, namely Gaussian distribution or exponential distribution. In large-size devices, the appropriate feature radius is selected, so that simplification can achieve results consistent with practical conditions. However, with the development of integrated circuit technology, CMOS technology has now entered nanometer dimensions, and for nanometer devices, different LET radial distributions will significantly affect the single-particle transient response of the device. And both Gaussian distribution and exponential distribution can not accurately simulate the radial LET distribution of particles in the Si material, so that the single-particle transient response of the nano device to different particles can not be accurately obtained through the traditional numerical simulation.
Disclosure of Invention
The invention aims to provide a numerical simulation method capable of accurately simulating the single-particle transient response of a nanometer device under particle incidence, and solves the problem that the single-particle transient response of the nanometer device to different particles cannot be accurately obtained based on the traditional numerical simulation.
The conception of the invention is as follows:
according to the invention, charge density distribution calculated by Geant4 simulation is used as a heavy ion parameter and introduced into a nanometer device model for device single event effect simulation, and single event transient response of incident particles generated in the device is obtained. The method directly uses the charge density distribution of the particles ionized in Si in TCAD simulation, so that the single particle effect of the nano device in a radiation environment can be more accurately evaluated, and theoretical guidance is provided for the radiation hardening resistance of the device.
The technical scheme of the invention is as follows:
a method for simulating the single-particle transient response of a nanometer device under particle incidence is characterized in that: and (3) taking the charge density distribution ionized by the particles in the Si material as a heavy ion parameter, introducing the heavy ion parameter into a nanometer device simulation model to perform device single event effect simulation, and obtaining the single event transient response generated by the incident particles in the nanometer device.
Further, the method specifically comprises the following steps:
step 1, utilizing a Geant4 simulation method to obtain the charge density distribution of particles ionized in a Si material;
step 2, modeling the nanometer device by using TCAD;
and 3, introducing the charge density distribution of the particles ionized in the Si material obtained in the step 1 as heavy ion parameters into the nano device simulation model established in the step 2 for device single event effect simulation to obtain single event transient response of the incident particles generated in the nano device.
Further, the charge density distribution is a radial charge density distribution.
Further, step 1 specifically comprises:
step 1.1, obtaining the radial distribution of Linear Energy Transfer (LET) of particles in a Si material by utilizing a Geant4 simulation method;
and step 1.2, calculating the radial distribution of the charge density ionized in the material by utilizing the radial direction of linear energy transfer LET of the particles in the Si material obtained in the step 1.1.
Further, step 1.2 calculates the radial distribution of the charge density ionized by the particles in the material based on:
where R is the statistical interval of radial distribution, h is the statistical value of the incident depth of the particles, E0Is ionization energy of Si material, RnAs radial coordinate of the nth statistic point, Rn-1Is the radial coordinate of the n-1 th statistic point.
Further, in the step 2, a process module in the sentaturus TCAD is used for process modeling to obtain a nanometer device simulation model.
Further, step 2 also includes a device calibration process:
and performing conventional electrical performance simulation on the nano device simulation model by using a Sd evice module in the Sentaurus TCAD, comparing the electrical performance with the electrical performance of a device with the same process size obtained by actual device electrical performance or spice simulation, and performing device calibration.
Further, step 3 specifically comprises:
step 3.1, adding a heavy ion model HeavyIon () into the Sdvevice physical model in the Sentaurus TCAD;
step 3.2, selecting a custom function to define the radial distribution of the charge density ionized by the heavy ions:
SpatialShape＝PMI_SpatialDistributionFunction
and 3.3, in the self-defined function, defining the radial distribution of the ionized charge density of the heavy ions in the simulation model of the FinFET device by using the piecewise function.
And 3.4, performing single-particle transient simulation on the device to accurately obtain the leakage current transient waveform of the device under the particle incidence, and further obtain the single-particle transient response of the incident particles in the nanometer device.
The invention has the beneficial effects that:
the invention provides a numerical simulation method for accurately simulating the transient response of a single particle of a nanometer device under particle incidence. And (3) introducing the charge density distribution ionized by the particles in the Si material into a nanometer device simulation model established by TCAD through a numerical method, and performing single-particle transient simulation to accurately obtain the leakage current transient waveform generated by the irradiation of the particles in the nanometer device. Compared with the traditional TCAD simulation method which only can compare the influence of LET values on the single-particle transient state of the device, the method can directly compare the influence of energy and particle type change on the single-particle transient state of the device. Meanwhile, the method discovers that different particles have the same LET value for the nanometer device through simulation, and the single particle transient response difference is larger due to different radial distribution of the particles. Therefore, the radiation effect of the device under different radiation environments can be more accurately evaluated by using the method.
Drawings
Fig. 1 shows LET radial distribution of two types of particles in Si material obtained by simulation in the example.
Fig. 2 shows the radial distribution of the ionized charge density of the two particles in the Si material within 70nm, which is calculated in the example.
FIG. 3 is a model of the device structure obtained from the process simulation in the example.
Fig. 4 is a graph of the charge density generated by simulating heavy ions along the channel length in the example.
FIG. 5 is a transient waveform of leakage current of a device under two incident particles obtained in the example
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, specific embodiments accompanied with figures are described in detail below, and it is apparent that the described embodiments are a part of the embodiments of the present invention, not all of the embodiments.
For general TCAD single particle effect simulation, in heavy ion parameters, a heavy ion LET value needs to be given, radial distribution is selected to be Gaussian distribution or exponential distribution, and simultaneously characteristic radius of the Gaussian distribution or exponential distribution needs to be given. However, the radial distribution of the LET values of the actual particles in the Si material is very much wrong, both with gaussian and exponential approximations. For a nanometer device, if LET radial distribution of particles in the device cannot be accurately simulated, a simulation result of a single particle effect of the device has a large error, so that the reliability and the precision of TCAD single particle effect simulation are greatly influenced, and simulation work cannot provide effective guidance for experiments and anti-radiation reinforcement design.
Based on the analysis, the invention provides a combined numerical simulation method by utilizing Geant4 and TCAD, which is characterized in that the radial distribution of the charge density ionized by the particles in the Si material is imported into a nanometer device simulation model established by TCAD through a numerical method, single-particle transient simulation is carried out, and the single-particle effect simulation result of the particles in the nanometer device is accurately obtained. With energy of 75MeV19F9+With particles and energy of 388MeV28Si14+The technical solution of the present invention is illustrated by an example of a single particle transient generated in a bulk silicon FinFET device with a gate length of 28 nm. The method comprises the following steps:
1) firstly, a cube with Si and 1mm side length is built in Geant4, and the selected energy of incident particles is 75MeV19F9+And an energy of 388MeV28Si14+And respectively counting the LET radial distribution and the LET axial distribution of the two particles in the Si material, wherein the unit is MeV/mm. The sensitive volume thickness of the device is in the range of 10um, and the LET of the two particles is basically constant in the range of 10um along the incident direction, so that the particles can be uniformly distributed along the incident direction. While the radial distribution of the two types of particles LET is very different, and the distribution is shown in fig. 1.
2) Using ionization energy E of Si material03.62eV, and calculating the charge density rho of the two particles ionized in the Si material according to the LET radial distribution obtained in the step 1)eRadial distribution, unit is pair/cm3. The calculation formula is as follows:
where R is the statistical interval of radial distribution, h is the statistical value of the incident depth of the particles, E0Is ionization energy of Si material, RnRadial seat for nth statistic pointLabel, Rn-1Is the radial coordinate of the n-1 th statistic point. In the embodiment, R is 1nm, and h is 10 um. Since the maximum length of the employed nanodevices in the radial direction was 0.069um, the charge density distribution was calculated only in the range of 0.07um in the radial direction, and the result is shown in fig. 2.
3) Simulating and calibrating a 28nm FinFET device by using TCAD;
a. firstly, a process modeling is carried out by utilizing a sprocess module in the sentourus TCAD to obtain a simulation model structure of the FinFET device, and meshing is carried out on the device. The process flow is provided by TCAD software, and the device parameters are extracted from a 28nm FinFET device. The resulting FinFET device simulation model structure from modeling is given in fig. 3.
b. And carrying out physical simulation on the FinFET device simulation model by using a Sd evice module in the Sentaurus TCAD to obtain a transfer characteristic curve Id-Vg of the device when drain terminal bias voltage Vd is 0.8V, comparing the transfer characteristic curve Id-Vg with an actual transfer characteristic curve of the FinFET device to carry out device calibration, and finally enabling the transfer characteristic curve obtained by simulation to be the same as an experimental measurement result.
4) Importing the charge density distribution obtained in the step 2) into a FinFET device simulation model of TCAD physical simulation;
firstly, adding a heavy ion incidence module HeavIon () in the physical process of the Sdvevice module in the TCAD, defining that heavy ions are incident along the X axis, wherein the incidence position is the center of a device channel, the incidence depth is 10 mu m, and the LET value of the heavy ions is unchanged along the incidence direction. And a custom function is selected to define the radial distribution of charge density ionized by the heavy ions. Grammar is as
HeavyIon(SpatialShape＝PMI_SpatialDistributionFunction)
In the self-defining function, the charge density radial distribution of heavy ions ionized in the FinFET device simulation model is defined by a piecewise function, and the charge density radial distribution data is calculated in the step 2). The precision of the method is determined by the statistical interval R of radial distribution in the step 2) and the meshing precision of the device in the step 3) a, and the precision of radial distribution of the charge density can be improved by reducing the size of the statistical interval R or the meshing. The charge density distribution simulated in the channel length direction of the two types of particles in this example is shown in fig. 4.
5) And (3) performing device heavy ion single particle transient simulation to accurately obtain leakage current transient waveforms of the device under the incidence of two types of particles, as shown in fig. 5.
As can be seen from fig. 5, the radial distribution of two particles with the same LET value on the device surface is different, and the single-particle transient generated in the same device will be greatly different. Therefore, the simulation method provided by the invention can more accurately evaluate the single-particle transient state of the device under different radiation environments.
Claims (8)
1. A method for simulating the single-particle transient response of a nanometer device under particle incidence is characterized in that: and (3) taking the charge density distribution ionized by the particles in the Si material as a heavy ion parameter, introducing the heavy ion parameter into a nanometer device simulation model to perform device single event effect simulation, and obtaining the single event transient response generated by the incident particles in the nanometer device.
2. The method for simulating a nano-device single-particle transient response under particle incidence according to claim 1, specifically comprising the steps of:
step 1, utilizing a Geant4 simulation method to obtain the charge density distribution of particles ionized in a Si material;
step 2, modeling the nanometer device by using TCAD;
and 3, introducing the charge density distribution of the particles ionized in the Si material obtained in the step 1 into the nano device simulation model established in the step 2 as heavy ion parameters, and performing single particle effect simulation on the device to obtain the single particle transient response of the incident particles generated in the nano device.
3. The method according to claim 2, wherein the charge density distribution in step 1 is a radial charge density distribution.
4. The method for simulating the single-particle transient response of the nano device under the condition of particle incidence according to claim 3, wherein the step 1 specifically comprises the following steps:
step 1.1, obtaining the radial distribution of linear energy transmission LET of particles in a Si material by utilizing a Geant4 simulation method;
and 1.2, calculating the radial distribution of the ionized charge density of the particles in the Si material by using the radial distribution of linear energy transfer LET of the particles in the Si material obtained in the step 1.1.
5. The method for simulating a nano-device single-particle transient response under particle incidence according to claim 4, wherein step 1.2 calculates the radial distribution of the charge density ionized by the particles in the Si material based on the following formula:
where R is the statistical interval of radial distribution, h is the statistical value of the incident depth of the particles, E0Is ionization energy of Si material, RnAs radial coordinate of the nth statistic point, Rn-1Is the radial coordinate of the n-1 th statistic point.
6. The method of simulating a nano-device single-particle transient response under particle incidence of claim 5, wherein: and 2, carrying out process modeling by using a sprocess module in the sentaturus TCAD to obtain a nano device simulation model.
7. The method of simulating a nano-device single-particle transient response under particle incidence of claim 6, wherein: the step 2 also comprises the process of calibrating the nanometer device simulation model:
and performing conventional electrical performance simulation on the nano device simulation model by using a Sd evice module in the Sentaurus TCAD, comparing the electrical performance with the electrical performance of a device with the same process size obtained by actual device electrical performance or spice simulation, and performing device calibration.
8. The method for simulating the single-particle transient response of a nano-device under particle incidence according to any one of claims 1 to 7, wherein the step 3 specifically comprises:
step 3.1, adding a heavy ion model HeavyIon () into the Sdvevice physical model in the Sentaurus TCAD;
step 3.2, in the heavy ion model HeavyIon (), selecting a custom function to define the radial distribution of the charge density ionized by the heavy ions:
SpatialShape＝PMI_SpatialDistributionFunction
and 3.3, in the self-defined function, defining the radial distribution of the ionized charge density of the heavy ions in the simulation model of the FinFET device by using the piecewise function.
And 3.4, performing single-particle transient simulation on the device to accurately obtain the leakage current transient waveform of the device under the particle incidence, and further obtain the single-particle transient response of the incident particles in the nanometer device.
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