CN117473928A - Method for estimating single event turnover rate in atmosphere of nano integrated circuit - Google Patents
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Abstract
The invention provides a method for estimating the single-particle turnover rate in the atmosphere of a nano integrated circuit, which can solve the technical problems of high result and poor precision of the single-particle turnover rate in the atmosphere of the nano integrated circuit estimated by the existing method. The method comprises the following steps: step 1, obtaining a single neutron event upset average section sigma of a spallation neutron source Spallation And a 14MeV neutron single event upset section sigma 14MeV The method comprises the steps of carrying out a first treatment on the surface of the Step 2, utilize sigma 14MeV Neutron single event upset average cross section sigma of respectively equivalent atmospheric neutron environments greater than 10MeV >10MeV(Atmosphere) Neutron single event upset average cross section sigma of spallation neutron source greater than 10MeV >10MeV(Spallation) I.e. sigma >10MeV(Atmosphere) ＝σ 14MeV 、σ >10MeV(Spallation) ＝σ 14MeV The method comprises the steps of carrying out a first treatment on the surface of the Step 3, using sigma Spallation 、σ >10MeV(Spallation) Calculating 1-10MeV neutron sheet of spallation neutron sourceParticle-inversion average cross section sigma 1‑10MeV(Spallation) The method comprises the steps of carrying out a first treatment on the surface of the Step 4, utilizing sigma 1‑10MeV(Spallation) Single event upset average cross section sigma of 1-10MeV neutrons in equivalent atmospheric neutron environment 1‑10MeV(Atmosphere) I.e. sigma 1‑10MeV(Atmosphere) ＝σ 1‑10MeV(Spallation) The method comprises the steps of carrying out a first treatment on the surface of the Step 5, using sigma >10MeV(Atmosphere) 、σ 1‑10MeV(Atmosphere) And calculating the single particle turnover rate of the nano integrated circuit in the atmospheric neutron environment.
Description
Technical Field
The invention relates to test evaluation of radiation resistance of an integrated circuit, in particular to a method for estimating the single event turnover rate of atmospheric neutrons of a nano integrated circuit.
Background
The laboratory simulated irradiation device is used for carrying out the estimation of the single event turnover rate of the atmospheric neutrons, and is a key link of the radiation-resistant reinforcement design and application of integrated circuits. The single event upset rate of the atmosphere neutrons refers to the frequency of single event upset of the integrated circuit in the atmosphere neutron radiation environment, and characterizes the intensity of the radiation resistance of the integrated circuit, and determines the reliability of the integrated circuit in the radiation environment and the effectiveness of reinforcement measures. The energy spectrum shape of the spallation neutron source is similar to that of atmospheric neutrons, the fluence rate is 8-9 orders of magnitude higher than that of the atmospheric neutrons at sea level, and the spallation neutron source is an ideal simulated irradiation device for estimating the turnover rate. At present, a spallation neutron source is generally adopted to carry out an acceleration test to estimate the turnover rate (see EDEC.Measurent and Reporting of Alpha Particles and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices [ S ]. JEDEC Standard JESD89B,2021;Japan Electronics and Information Technology Industries Association.JEITASER testing guideline[S ]. JEITAStandard EDR-4705,2005;IEC.Process management for avionics-Atmospheric radiation effects-Part 2:guidelines for single event effects testing for avionics systems[S ]. IEC Tech.Std.623996 Part 2,2017.).
As the feature size of the integrated circuit is reduced to below hundred nanometers, the existing flip rate estimation method has the problem of overestimation. According to the existing test standard, the neutron share below 10MeV is not considered in the overturn rate estimation, namely, single event overturn caused by neutrons below the preset cutoff energy can be ignored. However, the operation voltage of the nano integrated circuit is reduced, the node capacitance is reduced, the critical charge is continuously reduced, and single event upset caused by neutrons in a low energy section is more and more remarkable. Meanwhile, the spallation neutron source is not precisely matched with the atmospheric neutron energy spectrum, and a part of spallation neutron source energy spectrum has higher low-energy components. For example, the 1-10MeV energy band accounts for about 36% of atmospheric neutrons above 1MeV, while the proportion of beams such as CSNS Back-n (chinese spallation neutron source dihedral white light neutron beam line), ISIS ChipIR (rutherford alpton ISIS chip irradiation beam line, uk), J-PARC BL10 (japanese proton accelerator research composite material and life science experiment device No. 10 beam line) can reach about 80% or more, which causes spallation neutron source experiments to account for additional turnover caused by low energy band neutrons, making the turnover rate estimate higher than the actual value, and the prediction accuracy poor. Overestimation of the estimated result will force the semiconductor manufacturer and the system designer to invest excessive reinforcement cost to ensure the reliability of the integrated circuit and the electronic system, and even possibly cause the reduction of other important performance indexes such as power consumption, speed, area and the like.
Disclosure of Invention
The invention aims to solve the technical problems of high estimation result and poor estimation precision in the existing estimation method for estimating the atmospheric neutron single event turnover rate of a nano integrated circuit, and provides the method for estimating the atmospheric neutron single event turnover rate of the nano integrated circuit.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the method for estimating the single particle turnover rate in the atmosphere of the nano integrated circuit is characterized by comprising the following steps of: the method comprises the following steps:
step 1, obtaining a single neutron event upset average section sigma of a spallation neutron source Spallation And a 14MeV neutron single event upset section sigma 14MeV ；
Step 2, using the obtained sigma 14MeV Neutron single event upset average cross section sigma of respectively equivalent atmospheric neutron environments greater than 10MeV >10MeV(Atmosphere) Neutron single event upset average cross section sigma of spallation neutron source greater than 10MeV >10MeV(Spallation) I.e. sigma >10MeV(Atmosphere) ＝σ 14MeV 、σ >10MeV(Spallation) ＝σ 14MeV ；
Step 3, using sigma Spallation 、σ >10MeV(Spallation) Calculating single event upset average section sigma of 1-10MeV neutrons of spallation neutron source 1-10MeV(Spallation) ；
Step 4, utilizing the sigma 1-10MeV(Spallation) Single event upset average cross section sigma of 1-10MeV neutrons in equivalent atmospheric neutron environment 1-10MeV(Atmosphere) I.e. sigma 1-10MeV(Atmosphere) ＝σ 1-10MeV(Spallation) ；
Step 5, using sigma >10MeV(Atmosphere) 、σ 1-10MeV(Atmosphere) And calculating the single particle turnover rate of the nano integrated circuit in the atmospheric neutron environment.
Further, the step 3 specifically comprises:
calculating single event upset average section sigma of 1-10MeV neutrons of spallation neutron source according to the following formula 1-10MeV(Spallation) ：
Wherein,for spallation neutron sources greater than 10MeV neutron fluence rates,differential fluence rate, Φ, of spallation neutron source (Spallation) For spallation neutron source fluence rate, E is neutron energy, +.>The neutron fluence rate is 1-10MeV for spallation neutron sources.
Further, the step 5 specifically comprises:
calculating the single particle turnover rate SER of the nano integrated circuit in the atmospheric neutron environment according to the following steps:
wherein,an atmospheric neutron fluence rate of 1-10MeV, < >>Is differential fluence rate of atmospheric neutrons, phi (Atmosphere) Is the fluence rate of atmospheric neutrons, +.>The fluence rate is integrated for atmospheric neutrons greater than 10 MeV.
Further, the step 1 specifically includes the following steps:
step 1.1, carrying out a neutron single event upset test of a nano integrated circuit by using a spallation neutron source, combining a neutron differential energy spectrum of the spallation neutron source, or combining a neutron differential energy spectrum of the spallation neutron source by using a neutron single event upset section energy dependent function diagram to obtain a neutron single event upset average section sigma of the spallation neutron source Spallation ；
Step 1.2, carrying out neutron single event upset test of the nano integrated circuit by utilizing a 14MeV single energy neutron source, and calculating to obtain a 14MeV neutron single event upset section sigma according to the following formula 14MeV ：
Wherein N is upset To the total number of inversions that occur within the irradiation time T, N bit Representing the total memory capacity of the circuit, Φ 14MeV Is 14MeV single energy neutron fluence rate.
Further, in step 1.1:
utilizing a spallation neutron source to carry out neutron single event upset test of the nano integrated circuit, and combining a neutron differential energy spectrogram of the spallation neutron source to obtain a neutron single event upset average section sigma of the spallation neutron source Spallation The specific calculation formula of (2) is as follows:
further, in step 1.1:
obtaining neutron single event upset average section sigma of spallation neutron source by utilizing neutron single event upset section energy dependency function diagram and combining neutron differential energy spectrogram of spallation neutron source Spallation The specific calculation formula of (2) is as follows:
wherein sigma (E) is a neutron single event upset cross-section energy dependent function.
Further, in step 1.1, the spallation neutron source is TRUMF, ISIS ChipIR, CSNS Back-n, CSNS BL09, LANSCE, RCNP or J-PARC BL10.
The invention has the beneficial effects that:
1. the method for estimating the atmospheric neutron single event upset rate of the nano integrated circuit provided by the invention is based on the energy dependence characteristic that the neutron single event upset section above 10MeV of the nano integrated circuit is weakly related to neutron energy and the characteristic that the energy spectrum shape of a spallation neutron source and atmospheric neutrons in a 1-10MeV energy region is approximate, and the method for estimating the atmospheric neutron single event upset rate of the nano integrated circuit is realized by using the 14MeV neutron single event upset section and the spallation neutron source 1-10MeV neutron single event upset average section to perform sectional equivalent on the atmospheric neutron environment above 10MeV and 1-10MeV neutron single event upset average section, so that the estimation result is more accurate.
2. According to the invention, single event upset caused by neutrons of 1-10MeV and more than 10MeV of the nano integrated circuit is comprehensively considered, and the maximum deviation of the calculated SER predicted value compared with the standard value is 11%; the maximum deviation of the SER predicted value calculated by the conventional spallation neutron source prediction method only considering neutron single event upset of more than 10MeV compared with the standard value is 287%. Therefore, the method has higher estimation precision and more accurate estimation result.
3. Compared with the conventional spallation neutron source prediction method which only considers neutron single event upset above 10MeV, the method provided by the invention has the advantages that the influence of the energy spectrum of the spallation neutron source on the prediction result is small, and the method is suitable for spallation neutron sources with different energy spectrums.
Drawings
FIG. 1 is a flow chart of a method for estimating the single event upset rate in the atmosphere of a nano integrated circuit according to the present invention;
FIG. 2 is a neutron single event upset cross section energy dependence function diagram of a 40nm process static random access memory;
FIG. 3 is a neutron differential energy spectrum of Beijing terrestrial atmospheric neutrons;
FIG. 4 is a neutron differential energy spectrum of a spallation neutron source LANSCE;
FIG. 5 is a neutron differential energy spectrum of a spallation neutron source TRUMF;
FIG. 6 is a neutron differential energy spectrum of a spallation neutron source RCNP;
FIG. 7 is a neutron differential energy spectrum of a spallation neutron source ISIS ChipIR;
FIG. 8 is a neutron differential energy spectrum of a spallation neutron source J-PARC BL 10;
FIG. 9 is a neutron differential energy spectrum of a spallation neutron source CSNS Back-n;
fig. 10 shows a neutron differential energy spectrum of the spallation neutron source CSNS BL 09.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.
(1) Example base data
Taking a 40nm technology static random access memory as an example, the estimation method provided by the invention is described in detail. Fig. 2 shows neutron single event upset section energy dependence function sigma (E) of the static random access memory, the dependence function is a piecewise function, neutron single event upset sections in different energy intervals are given, and the energy intervals are given by error bars in the abscissa direction in the figure.
The precision and the application range of the prediction method are described by taking 7 main spallation neutron source beam lines in the world as an experiment source example and taking the Beijing ground atmospheric neutron environment as a prediction object, and neutron differential energy spectrums of the Beijing ground atmospheric neutrons and the main spallation neutron sources in the world are shown in figures 3-10.
(2) SER standard value of single event turnover rate in atmosphere
The definition formula of the single event upset rate SER in the atmosphere is as follows:
wherein sigma (E) is neutron single event upset cross section energy dependent function (unit: cm) 2 /bit), given by fig. 2;differential fluence rate (unit: cm) as atmospheric neutrons -2 MeV -1 s -1 ) As given by fig. 3; phi (Atmosphere) The fluence rate (unit: cm) is the atmospheric neutrons -2 s -1 ) The method comprises the steps of carrying out a first treatment on the surface of the E is neutron energy (unit: meV).
SER is in bit units -1 s -1 Representing the number of times a memory bit toggles within one second, is a very small unit. The unit is usually converted to FIT Mbit -1 Representation 10 6 The number of memory bits is 10 9 The number of times of turnover in an hour is 1 FIT.Mbit -1 ＝3.6×10 18 bit -1 s -1 。
Thus, the SER standard value was found to be 153FIT Mbit -1 The method is used as a reference for evaluating the precision of the estimation method provided by the invention.
(3) Fig. 1 is a flowchart of a method for estimating the single neutron event turnover rate in the atmosphere of a nano integrated circuit, which is provided by the invention, and comprises the following specific implementation processes:
step 1, obtaining a single neutron event upset average section sigma of a spallation neutron source Spallation And a 14MeV neutron single event upset section sigma 14MeV
Step 1.1, carrying out a neutron single event upset test of a nano integrated circuit by using a spallation neutron source, and obtaining a neutron single event upset average section sigma of the spallation neutron source according to the following calculation by combining a neutron differential energy spectrum of the spallation neutron source Spallation ：
Wherein N is upset (dimensionless) is the total number of inversions that occur within the irradiation time T (unit: s) for the nano-integrated circuit; n (N) bit Representing the total memory capacity (unit: bit) of the circuit; phi (Spallation) For the fluence rate of the spallation neutron source,neutron fluence rate (unit: cm) of greater than 10MeV for spallation neutron source -2 s -1 )；Differential fluence rate (unit: cm) for spallation neutron source -2 MeV -1 s -1 ) As shown in fig. 4-10.
The purpose of this embodiment is to illustrate the applicability of the prediction method to 7 different spallation neutron sources, but because of the limitation of experimental resources, only experimental data of the spallation neutron sources CSNS Back-n can be obtained, and experimental values of all spallation neutron sources cannot be obtained. Therefore, for the case that the experimental value of the spallation neutron source cannot be obtained, the following formula is adopted to calculate and obtain the sigma of the corresponding spallation neutron source based on the neutron single event upset section energy dependence function sigma (E) shown in fig. 2 and the neutron differential energy spectrum of the spallation neutron source shown in fig. 4-8 and 10 Spallation ：
By comparison, when the spallation neutron source is CSNS Back-n, based on neutron single event upset section energy dependence function sigma (E) shown in FIG. 2 and neutron differential energy spectrum shown in FIG. 9, sigma of CSNS Back-n is calculated by the formula Spallation ＝3.30×10 -14 cm 2 Bit and 3.68X10 actual measurement calculated from the above experimental data -14 cm 2 The/bit is very identical.
Step 1.2, carrying out neutron single event upset test of the nano integrated circuit by utilizing a 14MeV single energy neutron source, and calculating to obtain a 14MeV neutron single event upset section sigma according to the following formula 14MeV ：
Wherein phi is 14MeV Is 14MeV single energy neutron fluence rate.
14MeV single-energy neutron single-event upset section sigma of static random access memory 14MeV ＝1.78×10 -14 cm 2 ·bit -1 (actual measurement value).
Step 2, using the obtained sigma 14MeV Neutron single event upset average cross section sigma of respectively equivalent atmospheric neutron environments greater than 10MeV >10MeV(Atmosphere) Neutron single event upset average cross section sigma of spallation neutron source greater than 10MeV >10MeV(Spallation) I.e. sigma >10MeV(Atmosphere) ＝σ 14MeV 、σ >10MeV(Spallation) ＝σ 14MeV 。
Step 3, calculating single event upset average section sigma of 1-10MeV neutrons of spallation neutron source according to the following formula 1-10MeV(Spallation) ：
Wherein,the integral fluence rate is 1-10MeV neutron for spallation neutron source; sigma (sigma) Spallation 、σ >10MeV(Spallation) The steps 1.1 and 2 are respectively provided.
Step 4, utilizing the sigma 1-10MeV(Spallation) Single event upset average cross section sigma of 1-10MeV neutrons in equivalent atmospheric neutron environment 1-10MeV(Atmosphere) I.e. sigma 1-10MeV(Atmosphere) ＝σ 1-10MeV(Spallation) 。
Step 5, calculating single particle turnover rate SER of the nano integrated circuit in an atmospheric neutron environment according to the following formula:
wherein,an atmospheric neutron fluence rate of 1-10MeV, < >>An atmospheric neutron fluence rate of greater than 10MeV, +.>The differential fluence rate for atmospheric neutrons is given by figure 3; sigma (sigma) 1-10MeV(Atmosphere) 、σ >10MeV(Atmosphere) And the steps are respectively given by the step 4 and the step 2.
So far, SER predicted values of the single event upset section data information of different spallation neutron sources and 14MeV single energy neutron sources shown in the combined figures 4-10 can be calculated. Based on TRUMF (Canadian particle and Nuclear physics national laboratory Tech Wu Mfu neutron device), ISIS ChipIR (Rutherforfex Alston ISIS chip irradiation beam line, UK), CSNS Back-n (China spallation neutron source dihedral white light neutron beam line), CSNS BL09 (China spallation neutron source 09 beam line), LANSCE (Luos Alamoss national laboratory neutron science center), RCNP (Japanese nuclear physics research center), J-PARC BL10 (Japanese proton acceleration)SER predicted values obtained by calculating spallation neutron source data of composite material and life science experiment device No. 10 wire harness) are 147, 170, 165, 167, 156, 154 and 159 FIT.Mbit respectively -1 Compared with the standard value 153 FIT.Mbit -1 The maximum deviation of (2) was 11%.
As comparison, based on the basic data, the SER predicted value is calculated according to the conventional spallation neutron source prediction method described in standard specifications of JEDEC Standard JESD B, JEITA Standard EDR-4705, IEC TS 62396-2 and the like. SER predicted values of spallation neutron sources based on TRUMF, ISIS ChipIR, CSNS Back-n, CSNS BL09, LANSCE, RCNP, J-PARC BL10 and the like are 146, 273, 271, 593, 166, 162, 370FIT Mbit respectively -1 The maximum deviation reached 287%.
Comparing the estimated deviation of the estimated method provided by the invention with the estimated deviation of the traditional estimated method, the estimated deviation can be found: (1) Compared with the maximum deviation of the standard value, the SER predicted value obtained by the prediction method provided by the invention is 11%, which is obviously lower than the maximum deviation of 287% of the conventional spallation neutron source prediction method, so that the prediction accuracy is higher, and the prediction result is more accurate. (2) The pre-estimation value obtained by the traditional pre-estimation method is quite different based on the spallation neutron sources with different energy spectrums, and the pre-estimation result is less influenced by the energy spectrums of the spallation neutron sources, so that the method is suitable for spallation neutron sources with different energy spectrums.
The foregoing is merely illustrative of specific embodiments of the present invention, and the scope of the present invention is not limited thereto, but any changes or substitutions within the technical scope of the present invention should be covered by the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (7)
1. A method for estimating the single event turnover rate in the atmosphere of a nano integrated circuit is characterized by comprising the following steps:
step 1, obtaining a single neutron event upset average section sigma of a spallation neutron source Spallation And a 14MeV neutron single event upset section sigma 14MeV ；
Step 2, using the obtained sigma 14MeV Neutron single event upset average cross section sigma of respectively equivalent atmospheric neutron environments greater than 10MeV >10MeV(Atmosphere) Neutron single event upset average cross section sigma of spallation neutron source greater than 10MeV >10MeV(Spallation) I.e. sigma >10MeV(Atmosphere) ＝σ 14MeV 、σ >10MeV(Spallation) ＝σ 14MeV ；
Step 3, using sigma Spallation 、σ >10MeV(Spallation) Calculating single event upset average section sigma of 1-10MeV neutrons of spallation neutron source 1-10MeV(Spallation) ；
Step 4, utilizing the sigma 1-10MeV(Spallation) Single event upset average cross section sigma of 1-10MeV neutrons in equivalent atmospheric neutron environment 1-10MeV(Atmosphere) I.e. sigma 1-10MeV(Atmosphere) ＝σ 1-10MeV(Spallation) ；
Step 5, using sigma >10MeV(Atmosphere) 、σ 1-10MeV(Atmosphere) And calculating the single particle turnover rate of the nano integrated circuit in the atmospheric neutron environment.
2. The method for estimating the single event upset rate in the atmosphere of the nano integrated circuit according to claim 1, wherein the step 3 is specifically:
calculating single event upset average section sigma of 1-10MeV neutrons of spallation neutron source according to the following formula 1-10MeV(Spallation) ：
Wherein,for spallation neutron source greater than 10MeV neutron fluence rate, +.>Differential fluence rate, Φ, of spallation neutron source (Spallation) Fluence rate for spallation neutron sourceE is neutron energy,the neutron fluence rate is 1-10MeV for spallation neutron sources.
3. The method for estimating the single event upset rate in the atmosphere of the nano integrated circuit according to claim 2, wherein the step 5 is specifically:
calculating the single particle turnover rate SER of the nano integrated circuit in the atmospheric neutron environment according to the following steps:
wherein,an atmospheric neutron fluence rate of 1-10MeV, < >>Is differential fluence rate of atmospheric neutrons, phi (Atmosphere) Is the fluence rate of atmospheric neutrons, +.>The fluence rate is integrated for atmospheric neutrons greater than 10 MeV.
4. The method for estimating an atmospheric neutron single event upset rate of a nano integrated circuit according to claim 3, wherein the step 1 specifically comprises the following steps:
step 1.1, carrying out a neutron single event upset test of a nano integrated circuit by using a spallation neutron source, combining a neutron differential energy spectrum of the spallation neutron source, or combining a neutron differential energy spectrum of the spallation neutron source by using a neutron single event upset section energy dependent function diagram to obtain a neutron single event upset average section sigma of the spallation neutron source Spallation ；
Step 1.2, carrying out neutron single event upset test of the nano integrated circuit by utilizing a 14MeV single energy neutron source, and calculating to obtain a 14MeV neutron single event upset section sigma according to the following formula 14MeV ：
Wherein N is upset To the total number of inversions that occur within the irradiation time T, N bit Representing the total memory capacity of the circuit, Φ 14MeV Is 14MeV single energy neutron fluence rate.
5. The method for estimating an atmospheric neutron single event upset rate of a nano integrated circuit according to claim 4, wherein in step 1.1:
utilizing a spallation neutron source to carry out neutron single event upset test of the nano integrated circuit, and combining a neutron differential energy spectrogram of the spallation neutron source to obtain a neutron single event upset average section sigma of the spallation neutron source Spallation The specific calculation formula of (2) is as follows:
6. the method for estimating an atmospheric neutron single event upset rate of a nano integrated circuit according to claim 4, wherein in step 1.1:
obtaining neutron single event upset average section sigma of spallation neutron source by utilizing neutron single event upset section energy dependency function diagram and combining neutron differential energy spectrogram of spallation neutron source Spallation The specific calculation formula of (2) is as follows:
wherein sigma (E) is a neutron single event upset cross-section energy dependent function.
7. The method for estimating the single neutron event upset rate in the atmosphere of the nano integrated circuit according to claim 5 or 6, wherein the method comprises the following steps:
in the step 1.1, the spallation neutron source is TRUMF, ISIS ChipIR, CSNS Back-n, CSNS BL09, LANSCE, RCNP or J-PARC BL10.
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