CN109657272B - Single event effect evaluation method and device - Google Patents
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Abstract
The disclosure relates to a single event effect evaluation method and device. The method comprises the following steps: constructing a three-dimensional circuit model of a target circuit, wherein the three-dimensional circuit model comprises a sensitive area; inputting the three-dimensional circuit model into nuclear reaction calculation simulation software to obtain nuclear reaction secondary ions generated in the sensitive area under the preset single particle energy; acquiring a single-particle transient pulse waveform output by the nuclear reaction secondary ion acting on the sensitive region through device simulation software; loading the single-particle transient pulse waveform onto the target circuit in an equivalent current source form to acquire circuit response information; and evaluating the single event effect of the target circuit through the circuit response information. The method disclosed by the invention can accurately quantify each physical process for generating the atmospheric neutron single event effect, and the single event effect of the target circuit is evaluated on the basis.
Description
Technical Field
The disclosure relates to the field of computer information processing, in particular to a single event effect evaluation method and device.
Background
Spacecraft electronic system failures caused by single-particle effects in space radiation environments have been widely studied, wherein the radiation particles causing the single-particle effects are mainly charged high-energy heavy ions and protons released by primary cosmic rays (including silver-river cosmic rays, solar particle events and the like). These energetic particles cannot reach the earth's surface due to the presence of the earth's atmosphere, and therefore they do not directly affect electronic systems operating on the ground and in atmospheric environments. However, the primary cosmic ray particles may undergo nuclear cascade reactions with earth atmospheric atoms to produce a large number of secondary ions, such as neutrons, protons, pi-mesons, muons, electrons, and the like. These secondary ions constitute the main source of single event effects for electronic systems in the ground and in the atmosphere, with the effect of neutrons being most pronounced.
The neutrons themselves are not charged, but their incidence into the circuit causes nuclear reactions that produce charged secondary nuclear reaction products. These secondary ions ionize along their trajectories of travel to produce electron-hole pairs. If the ionized charges are effectively collected by the sensitive nodes of the circuit, corresponding single event effects can be generated. With the wide application of nanoscale very large scale integrated circuits in electronic systems, the atmospheric neutron single event effect will become more severe.
Soft errors caused by atmospheric neutron single event effect become key factors for restricting further reduction of semiconductor process nodes, and are one of the main problems in the aspect of reliability of the current integrated circuit. In view of this, it is of great significance to predict and evaluate the single event effect of nanoscale integrated circuits.
In the prior art, methods for predicting and evaluating the neutron single event effect of an integrated circuit by methods such as aircraft carrying or high altitude tests, ground acceleration simulation tests and the like are introduced in Chinese patents CN 105718714A (a method and a system for determining the atmospheric neutron single event upset rate of a microcircuit), CN 105676016A (a method and a device for obtaining a sensitive section of a neutron single event effect device by using BGR), and CN 105676017A (a method and a device for obtaining a sensitive section of a single event effect device by using test data).
The aircraft carrying or high altitude test refers to a single event effect caused by testing neutrons in a real atmospheric environment, and because atmospheric neutron flux is very low, the testing time required for obtaining a testing result with statistical confidence is very long. The ground acceleration simulation test refers to the test of neutron single event effect in a simulated radiation source. Because the simulated radiation source can provide high flux neutrons, the required testing time is greatly reduced. However, the cost required by aircraft carrying or high altitude tests is high, the test period is long, the influence of atmospheric neutron radiation in different longitude and latitude, altitude and solar cycles cannot be comprehensively evaluated, the ground acceleration simulation test is limited by a limited acceleration simulation radiation source and a limited test machine, and the two research modes can be developed only for finished product circuits, so that the limitation is large.
In the prior art, chinese patents CN 106650039A (atmospheric neutron single event effect prediction method and apparatus for electronic devices) and CN 102903386A (a static random memory unit) describe a method for calculating a single event effect by simulating an incident process of neutrons in a circuit, and predict the single event effect by calculating energy of deposition of neutrons in a sensitive region of the device and comparing the deposition energy with critical charge of the sensitive region, and when the deposition energy of a neutron reaction product is greater than the critical charge, it is determined that a single event effect occurs.
The technology for predicting the single event effect by simulation does not consider the collection process of ionization charges, the influence of a single event transient pulse waveform and a specific circuit structure on the single event effect, and an additional critical charge parameter must be defined. The judgment basis of the occurrence of the single event effect completely depends on the definition of critical charge, so that the neutron soft error rate result calculated by the method has low precision and larger uncertainty.
Disclosure of Invention
In view of this, the present disclosure provides a single event effect evaluation method and apparatus, which can accurately quantify each physical process generating an atmospheric neutron single event effect, and evaluate the single event effect of a target circuit on the basis.
According to one aspect of the disclosure, a single event effect evaluation method is provided, and the method includes: constructing a three-dimensional circuit model of the target circuit, wherein the three-dimensional circuit model comprises a sensitive area; inputting the three-dimensional circuit model into nuclear reaction calculation simulation software to obtain nuclear reaction secondary ions generated in a sensitive area under the preset single particle energy; acquiring a single-particle transient pulse waveform output by the action of nuclear reaction secondary ions on a sensitive area through device simulation software; loading a single-particle transient pulse waveform onto a target circuit in an equivalent current source mode to acquire circuit response information; and evaluating the single event effect of the target circuit through the circuit response information.
In one exemplary embodiment of the present disclosure, constructing a three-dimensional circuit model of a target circuit includes: and constructing a three-dimensional circuit model through the geometric parameters and the physical parameters of the target circuit.
In an exemplary embodiment of the present disclosure, constructing a three-dimensional circuit model from geometric and physical parameters of a target circuit comprises: obtaining the layout of a storage unit in a target circuit and the size of a transistor in the storage unit through plane analysis to generate geometric parameters of the target circuit; and obtaining the thickness and the element composition of each layer in the target circuit through longitudinal cutting analysis so as to generate the physical parameters of the target circuit.
In an exemplary embodiment of the present disclosure, the sensitive region is set according to a size of a transistor in a memory cell of the target circuit.
In an exemplary embodiment of the present disclosure, inputting the three-dimensional circuit model into nuclear reaction computational simulation software, acquiring nuclear reaction secondary ions generated in the sensitive region at a predetermined single-particle energy comprises: inputting the three-dimensional circuit model into Monte Carlo simulation software; setting preset single particle energy in Monte Carlo simulation software; and acquiring nuclear reaction secondary ions generated in the sensitive region and related information thereof according to simulation calculation, wherein the related information of the secondary ions comprises linear energy transfer values, incident angles and ranges of the secondary ions.
In an exemplary embodiment of the present disclosure, acquiring, by device simulation software, a single-particle transient pulse waveform output by nuclear reaction secondary ion action on a sensitive region includes: establishing a sensitive area model in process computer aided design software; setting an input source of process computer-aided design software according to the nuclear reaction secondary ions; and acquiring a single-event transient pulse waveform generated on the sensitive region model according to simulation calculation.
In an exemplary embodiment of the present disclosure, modeling the sensitive region in the process computer-aided design software includes: acquiring the size of a transistor in a storage unit of a target circuit; and establishing a sensitive area model in the process computer aided design software according to the size of the transistor.
In one exemplary embodiment of the present disclosure, loading a single-particle transient pulse waveform onto a target circuit in the form of an equivalent current source, and obtaining circuit response information comprises: establishing a two-dimensional circuit model according to the circuit structure of the target circuit; and loading the single-particle transient pulse waveform on the two-dimensional circuit model in the form of an equivalent current source to acquire circuit response information.
In an exemplary embodiment of the present disclosure, the two-dimensional circuit model contains sensitive points; the method for loading the single-particle transient pulse waveform onto the two-dimensional circuit model of the target circuit in the form of the equivalent current source comprises the following steps: and loading the single-particle transient pulse waveform onto a sensitive point of the two-dimensional circuit model in the form of an equivalent current source.
In an exemplary embodiment of the present disclosure, evaluating the single event effect of the target circuit through the circuit response information includes: calculating the single-particle upset section of the target circuit through the circuit response information; and/or calculating a soft error rate of the target circuit from the circuit response information.
According to another aspect of the present disclosure, a single event effect evaluation apparatus is provided, the apparatus comprising: the model module is used for constructing a three-dimensional circuit model of the target circuit, and the three-dimensional circuit model comprises a sensitive area; the nuclear reaction calculation simulation module is used for inputting the three-dimensional circuit model into nuclear reaction calculation simulation software to obtain nuclear reaction secondary ions generated in a sensitive area under the preset single particle energy; the device simulation module is used for acquiring a single-particle transient pulse waveform output by the action of nuclear reaction secondary ions on the sensitive region through device simulation software; the circuit simulation module is used for loading the single-particle transient pulse waveform to a target circuit in an equivalent current source mode and acquiring circuit response information; and the evaluation module is used for evaluating the single event effect of the target circuit through the circuit response information.
According to yet another aspect of the present disclosure, an electronic device is presented, the electronic device comprising: one or more processors; storage means for storing one or more programs; when executed by one or more processors, cause the one or more processors to implement a method as above.
According to yet another aspect of the disclosure, a computer-readable medium is proposed, on which a computer program is stored, which program, when being executed by a processor, carries out the method as above.
According to the single event effect evaluation method, the single event effect evaluation device, the electronic equipment and the computer readable medium, each physical process for generating the atmospheric neutron single event effect can be accurately quantified, and the single event effect of the target circuit can be evaluated on the basis.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The above and other objects, features and advantages of the present disclosure will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings. The drawings described below are merely some embodiments of the present disclosure, and other drawings may be derived from those drawings by those of ordinary skill in the art without inventive effort.
Fig. 1 is a flowchart illustrating a single event effect evaluation method according to an exemplary embodiment.
Fig. 2 is a flow chart illustrating a single event effect evaluation method according to another exemplary embodiment.
Fig. 3 is a schematic diagram illustrating a single event effect evaluation method according to another exemplary embodiment.
Fig. 4 is a flowchart illustrating a single event effect evaluation method according to another exemplary embodiment.
Fig. 5 is a flowchart illustrating a single event effect evaluation method according to another exemplary embodiment.
Fig. 6 is a schematic diagram illustrating a single event effect evaluation method according to another exemplary embodiment.
Fig. 7 is a schematic diagram illustrating a single event effect evaluation method according to an exemplary embodiment.
Fig. 8 is a block diagram illustrating a single event effect evaluation apparatus according to an exemplary embodiment.
FIG. 9 is a block diagram of an electronic device shown in accordance with an example embodiment.
FIG. 10 is a schematic diagram illustrating a computer-readable storage medium according to an example embodiment.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals denote the same or similar parts in the drawings, and thus, a repetitive description thereof will be omitted.
Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the subject matter of the present disclosure can be practiced without one or more of the specific details, or with other methods, components, devices, steps, and so forth. In other instances, well-known methods, devices, implementations, or operations have not been shown or described in detail to avoid obscuring aspects of the disclosure.
The block diagrams shown in the figures are functional entities only and do not necessarily correspond to physically separate entities. I.e. these functional entities may be implemented in the form of software, or in one or more hardware modules or integrated circuits, or in different networks and/or processor means and/or microcontroller means.
The flow charts shown in the drawings are merely illustrative and do not necessarily include all of the contents and operations/steps, nor do they necessarily have to be performed in the order described. For example, some operations/steps may be decomposed, and some operations/steps may be combined or partially combined, so that the actual execution sequence may be changed according to the actual situation.
It is to be understood by those skilled in the art that the drawings are merely schematic representations of exemplary embodiments, and that the blocks or processes shown in the drawings are not necessarily required to practice the present disclosure and are, therefore, not intended to limit the scope of the present disclosure.
The inventors of the present application consider that: the single event effect response is generated by the incidence of atmospheric neutrons, and the physical processes of different levels, such as atomic nucleus interaction, device response, circuit response and the like, are involved, and have very important influence on the final single event effect evaluation result. In view of various defects in the prior art, the single event effect evaluation method is provided by the disclosure, and the method is based on computer simulation to accurately quantify each physical process for generating the atmospheric neutron single event effect and establish a complete neutron soft error rate calculation method on the basis. The technology can break through the limitations of the two technologies, not only is a simple and economic atmospheric neutron soft error rate evaluation method provided, a theoretical basis is provided for soft error promotion of an integrated circuit in a design stage, but also the complexity is reduced under the condition of ensuring the calculation accuracy by adopting simulation methods of different levels for physical processes of different levels.
The single event effect evaluation method and apparatus of the present application will be described in detail with reference to specific embodiments.
Fig. 1 is a flow chart illustrating a single event effect evaluation method according to an exemplary embodiment. The single event effect evaluation method 10 at least includes steps S102 to S110.
As shown in fig. 1, in S102, a three-dimensional circuit model of the target circuit is constructed, the three-dimensional circuit model including the sensitive region. A three-dimensional circuit model may be constructed, for example, from geometric and physical parameters of the target circuit. The target circuit may be an SRAM (static random access memory) circuit.
In one embodiment, constructing the three-dimensional circuit model from the geometric and physical parameters of the target circuit comprises: obtaining the layout of a storage unit in a target circuit and the size of a transistor in the storage unit through plane analysis to generate geometric parameters of the target circuit; and obtaining the thickness and the element composition of each layer in the target circuit through longitudinal cutting analysis so as to generate the physical parameters of the target circuit.
In one embodiment, the geometric and physical parameters of the circuit may be obtained by reverse engineering: specifically, the method comprises the steps of obtaining the thickness and the element composition of each layer of the circuit by utilizing longitudinal cutting analysis; and acquiring the layout of the storage unit, the size of each transistor in the storage unit and the like by utilizing plane analysis, and constructing a three-dimensional topological structure (a three-dimensional circuit model) by the parameters.
In one embodiment, the three-dimensional circuit model contains metal wiring layers, interlayer dielectrics, device active layers, and the like.
In one embodiment, the three-dimensional circuit model includes a sensitive region for selecting events for further device-level simulation. The size of the sensitive area can be set according to the size of the transistor in the memory cell of the target circuit.
In S104, the three-dimensional circuit model is input into nuclear reaction calculation simulation software, and nuclear reaction secondary ions generated in the sensitive region under a predetermined single-particle energy are acquired. The three-dimensional circuit model may be input to monte carlo simulation software, for example; setting preset single particle energy (which can be marked as En) in Monte Carlo simulation software; and acquiring nuclear reaction secondary ions generated in the sensitive region and related information thereof according to simulation calculation, wherein the related information of the secondary ions comprises linear energy transfer values, incident angles and ranges of the secondary ions.
In the embodiment of the present application, the single particles may be neutrons and protons. The target circuit model may be a static random access memory circuit model.
The three-dimensional circuit model is input into the nuclear reaction calculation simulation software to obtain details of the nuclear reaction secondary ions generated in the sensitive region under the predetermined single-particle energy, which will be described in detail in the embodiments of fig. 2 and 3.
In S106, a single-particle transient pulse waveform output by the nuclear reaction secondary ion acting on the sensitive region is obtained through device simulation software. The sensitive area model may be established, for example, in the process computer aided design software (TCAD); setting an input source of the process computer-aided design software according to the nuclear reaction secondary ions; and acquiring the single-event transient pulse waveform generated on the sensitive region model according to simulation calculation.
Acquiring the size of a transistor in a storage unit of the target circuit; and establishing a sensitive region model in the process computer aided design software according to the size of the transistor.
Details of the waveform of the single-particle transient pulse output by the nuclear reaction secondary ion acting on the sensitive region are obtained by device simulation software, and will be described in detail in the embodiments of fig. 4 and 5.
In S108, the single-particle transient pulse waveform is loaded onto the target circuit in the form of an equivalent current source, and circuit response information is acquired. Can be for example: establishing a two-dimensional circuit model according to the circuit structure of the target circuit; and loading the single-particle transient pulse waveform onto the two-dimensional circuit model in the form of an equivalent current source to obtain circuit response information.
Wherein the two-dimensional circuit model includes a sensitive point; loading the single-event transient pulse waveform onto a two-dimensional circuit model of the target circuit in the form of an equivalent current source comprises: and loading the single-particle transient pulse waveform to the sensitive point of the two-dimensional circuit model in the form of an equivalent current source.
The details of the circuit response information obtained by loading the single-particle transient pulse waveform to the target circuit in the form of an equivalent current source will be described in detail in the embodiments of fig. 6 and 7.
In S110, the single event effect of the target circuit is evaluated by the circuit response information.
In one embodiment, a single event upset cross section of the target circuit may be calculated from the circuit response information; wherein, SEU: the single event upset refers to an atmospheric neutron single event effect, a phenomenon that a single high-energy atmospheric neutron strikes a storage structure of a microcircuit to change a logic state of the memory structure (for example, 0 changes to 1 or 1 changes to 0), and the most common atmospheric neutron single event effect is single event upset, which is referred to as SEU for short.
The SEU cross section corresponding to a single particle with energy En can be calculated, for example, according to the following equation:
SEU(E n )＝(A×N error )/(N in ×N bit )
wherein A is the surface area of the three-dimensional topological structure used in the Monte Carlo simulation software, N bit Is the total number of memory cells in the three-dimensional circuit model of the target circuit, N error Number of memory cells for the occurrence of flip, N in Is the total number of incident single particles. Selecting single particles with different energies, and repeating the simulation calculation process such as S102-S108 to obtain single particle upset sections with different energies.
In one embodiment, the soft error rate of the target circuit is calculated from the circuit response information. The soft error rate of the circuit under the atmospheric neutron radiation environment can be estimated by combining neutron SEU cross section data and atmospheric neutron energy spectrum data, and the soft error rate can be estimated according to the following formula:
wherein d phi (E)/dE is the differential flux (cm) of atmospheric neutrons -2 MeV -1 s -1 ) (ii) a Emax and Emin are the upper and lower limits, respectively, for the neutron energy in the atmosphere.
The atmospheric neutrons are high-energy neutrons with energy of 1MeV or more within 25000 meters of the atmosphere and below sea level.
According to the single event effect evaluation method, secondary ions are generated by the interaction of the single event integrated circuit material atomic nuclei through simulation calculation; and then simulating the transmission and collection of electron-hole pairs and electron-hole pairs generated by charged secondary ions in the computing device through coulomb interaction ionization, then obtaining circuit-level single-particle transient response, finally evaluating the single-particle effect of the target circuit through the single-particle transient response, accurately quantifying each physical process generating the atmospheric neutron single-particle effect by adopting different simulation methods for the three physical processes at different levels, and evaluating the single-particle effect of the target circuit on the basis.
It should be clearly understood that this disclosure describes how to make and use particular examples, but the principles of this disclosure are not limited to any details of these examples. Rather, these principles can be applied to many other embodiments based on the teachings of the present disclosure.
Fig. 2 is a flow chart illustrating a single event effect evaluation method according to an exemplary embodiment. The single event effect evaluation method 20 shown in fig. 2 is a detailed description of S104 "inputting the three-dimensional circuit model into the nuclear reaction calculation simulation software to obtain the nuclear reaction secondary ions generated in the sensitive region under the predetermined single-particle energy" in the flow shown in fig. 1.
As shown in fig. 2, in S202, the three-dimensional circuit model is input to monte carlo simulation software. The Monte Carlo simulation software is a nuclear reaction calculation simulation software and is mainly used for simulation analysis of a layered structure, and the software simulates the physical process of particle transportation in a substance.
In S204, a predetermined single event energy is set in the monte carlo simulation software. The single particle may be set to neutron, for example, with the neutron energy set to En.
In S206, nuclear reaction secondary ions generated in the sensitive region and related information thereof are acquired according to simulation calculation, where the related information of the secondary ions includes a linear energy transfer value, an incident angle, and a range of the secondary ions.
The simulation process may record the event of secondary ions crossing the sensitive region. Fig. 3 is a schematic diagram illustrating a single event effect evaluation method according to an exemplary embodiment, and as shown in fig. 3, it is assumed that only radiation-induced charges that pass through the sensitive region can be effectively collected, thereby contributing to the single event effect. The presence of secondary ions entering or arising from the sensitive region of the device can therefore be defined as a critical particle event as a basis for assessing whether or not to perform subsequent device level simulation calculations.
A neutron transport nuclear reaction calculation module is used for screening out a key particle event, and information of secondary ions in the key particle event, including an LET value (linear energy transfer value), an incident angle and a range, is obtained and is used as input of subsequent device-level simulation calculation.
Fig. 4 is a flow chart illustrating a single event effect evaluation method according to an exemplary embodiment. The single event effect evaluation method 40 shown in fig. 4 is a detailed description of S106 "obtaining, by device simulation software, a single event transient pulse waveform output by the nuclear reaction secondary ion acting on the sensitive region" in the flow shown in fig. 1.
As shown in FIG. 4, in S402, a sensitive region model is built in the process computer aided design software. The size of a transistor in a memory cell of the target circuit can be acquired, for example; and establishing a sensitive region model in process computer aided design software (TCAD) according to the size of the transistor. Computer Aided Design (TCAD) technology allows the simulation of electronic devices, calculating electrical behavior on the basis of the device structure.
In S404, an input source of the process computer-aided design software is set according to the nuclear reaction secondary ions. The three-dimensional device structure used in the simulation may be defined, for example, by the dimensions of the transistors in the memory cells that are reverse engineered. For example, LET values, incident angles and ranges of key particles are used as input sources, in simulation software, the input sources are incident into a sensitive region model, charged secondary ions in the sensitive region model are ionized through coulomb interaction to generate electron-hole pairs and the electron-hole pairs are transmitted and collected, and the charge quantity collected in each event and the generated transient current pulse waveform are simulated and used as the input of a subsequent circuit-level simulation calculation module.
In S406, the waveform of the single-particle transient pulse generated on the sensitive region model is obtained according to simulation calculation. For example, three-dimensional TCAD device simulation is performed one by one for all the critical particle events to obtain single-particle transient pulse waveforms corresponding to all the critical particle events.
Fig. 5 is a flow chart illustrating a single event effect evaluation method according to an exemplary embodiment. The single event effect evaluation method 50 shown in fig. 5 is a detailed description of S108 "loading the single event transient pulse waveform to the target circuit in the form of an equivalent current source to obtain circuit response information" in the flow shown in fig. 1.
As shown in fig. 5, in S502, a two-dimensional circuit model is established according to the circuit structure of the target circuit. A two-dimensional circuit model of the target circuit may be established, for example, in SPICE. SPICE (Simulation program with integrated circuit models) is a circuit-level Simulation program, and can perform detailed analysis on the voltage-current relationship of partial circuits in a system. The components in the circuit being analyzed may include resistors, capacitors, inductors, mutual inductors, independent voltage sources, independent current sources, various linearly controlled sources, transmission lines, and active semiconductor devices. SPICE builds a model of the semiconductor device, and the user only needs to select the model level and give appropriate parameters.
In S504, the single-event transient pulse waveform is loaded onto the two-dimensional circuit model in the form of an equivalent current source, and circuit response information is acquired. And loading the single-particle transient pulse waveform to the sensitive point of the two-dimensional circuit model in the form of an equivalent current source.
And constructing an SPICE pulse current source to fit the SET according to a neutron SET (single event transient) current pulse waveform obtained in the simulation of the TCAD device. And as shown in fig. 6, the fitted pulse current source is added to a sensitive node of the circuit, so as to simulate the propagation of a transient pulse generated by a single event effect in the circuit and the corresponding circuit response. Thereby evaluating whether the single event caused an SEU or soft error.
The generation process of the neutron single event effect comprises the following steps: 1) The interaction of the neutrons and the atomic nucleus of the integrated circuit material generates secondary ions; 2) Charged secondary ions in the device are ionized through coulomb interaction to generate electron-hole pairs and the transmission and collection of the electron-hole pairs; 3) Single event transient response at circuit level. According to the single event effect evaluation method disclosed by the invention, different simulation methods are adopted for the three physical processes of different levels, so that the evaluation method of the whole neutron single event effect is obtained.
As shown in fig. 7, in the present disclosure, the secondary ions are generated by first simulating and calculating the interaction of the single particle integrated circuit material atomic nuclei; and then simulating the transmission and collection of electron-hole pairs and electron-hole pairs generated by charged secondary ions in the computing device through coulomb interaction ionization, then obtaining circuit-level single-particle transient response, and finally evaluating the single-particle effect of a target circuit through the single-particle transient response. The method breaks through the limitation that the traditional single event effect simulation prediction method is too simple and does not consider the charge collection process, and compared with the traditional prediction method, the method takes the comparison of critical charge and the precipitation energy of a sensitive area as the criterion for judging whether the single event upset happens or not, and can more accurately predict the single event effect according to the single event effect evaluation method disclosed by the invention.
It should be noted that, according to the single event effect evaluation method of the present disclosure, the technical content of the present disclosure is described by taking the SRAM circuit as an example, but the method of the present disclosure is also applicable to other circuits sensitive to the single event effect for evaluation.
According to the single event effect evaluation method disclosed by the invention, the simulation of a device level and a circuit level can be replaced by TCAD mixed simulation to obtain the neutron single event upset section.
Those skilled in the art will appreciate that all or part of the steps implementing the above embodiments are implemented as computer programs executed by a CPU. When executed by the CPU, performs the functions defined by the above-described methods provided by the present disclosure. The program may be stored in a computer readable storage medium, which may be a read-only memory, a magnetic or optical disk, or the like.
Furthermore, it should be noted that the above-mentioned figures are only schematic illustrations of the processes involved in the methods according to exemplary embodiments of the present disclosure, and are not intended to be limiting. It will be readily understood that the processes shown in the above figures are not intended to indicate or limit the chronological order of the processes. In addition, it is also readily understood that these processes may be performed synchronously or asynchronously, e.g., in multiple modules.
The application also discloses a single event effect evaluation device embodiment, which can be used for executing the method embodiment disclosed by the invention. For details not disclosed in the embodiments of the apparatus of the present disclosure, refer to the embodiments of the method of the present disclosure.
Fig. 8 is a block diagram illustrating a single event effect evaluation apparatus according to an exemplary embodiment. The single event effect evaluation device 80 includes: a model module 802, a nuclear reaction calculation simulation module 804, a device simulation module 806, a circuit simulation module 808, and an evaluation module 810.
The model module 802 is configured to construct a three-dimensional circuit model of the target circuit, where the three-dimensional circuit model includes a sensitive region; the geometrical and physical parameters of the circuit can be obtained by reverse engineering: specifically, the method comprises the steps of obtaining the thickness and the element composition of each layer of the circuit by utilizing longitudinal cutting analysis; and acquiring the layout of the storage unit, the size of each transistor in the storage unit and the like by utilizing plane analysis, and constructing a three-dimensional topological structure (a three-dimensional circuit model) by the parameters.
The nuclear reaction calculation simulation module 804 is used for inputting the three-dimensional circuit model into nuclear reaction calculation simulation software to obtain nuclear reaction secondary ions generated in the sensitive area under the preset single-particle energy; the three-dimensional circuit model may be input to monte carlo simulation software, for example; setting preset single particle energy (which can be marked as En) in Monte Carlo simulation software; and acquiring nuclear reaction secondary ions generated in the sensitive region and related information thereof according to simulation calculation, wherein the related information of the secondary ions comprises linear energy transfer values, incident angles and ranges of the secondary ions.
The device simulation module 806 is configured to obtain a single-particle transient pulse waveform output by the nuclear reaction secondary ion action on the sensitive region through device simulation software; the sensitive region model may be established, for example, in the process computer aided design software (TCAD); setting an input source of the process computer-aided design software according to the nuclear reaction secondary ions; and acquiring the single-event transient pulse waveform generated on the sensitive region model according to simulation calculation.
The circuit simulation module 808 is configured to load a single-particle transient pulse waveform onto a target circuit in the form of an equivalent current source, and acquire circuit response information; can be for example: establishing a two-dimensional circuit model according to the circuit structure of the target circuit; and loading the single-particle transient pulse waveform to the two-dimensional circuit model in the form of an equivalent current source to acquire circuit response information.
The evaluation module 810 is used for evaluating the single event effect of the target circuit through the circuit response information. Calculating the single-particle upset section of the target circuit through the circuit response information; the soft error rate of the target circuit may also be calculated from the circuit response information.
According to the single event effect evaluation device disclosed by the invention, secondary ions are generated by the interaction of the single event integrated circuit material atomic nuclei through simulation calculation; and then simulating the transmission and collection of electron-hole pairs and electron-hole pairs generated by charged secondary ions in the computing device through coulomb interaction ionization, then acquiring circuit-level single-particle transient response, finally evaluating the single-particle effect of the target circuit through the single-particle transient response, and accurately quantifying each physical process generating the atmospheric neutron single-particle effect by adopting different simulation methods for the three physical processes of different levels, and evaluating the single-particle effect of the target circuit on the basis.
Those skilled in the art will appreciate that the modules described above may be distributed in the apparatus according to the description of the embodiments, or may be modified accordingly in one or more apparatuses unique from the embodiments. The modules of the above embodiments may be combined into one module, or further split into multiple sub-modules.
The application also discloses an electronic device, and fig. 9 is a block diagram of an electronic device shown according to an exemplary embodiment.
An electronic device 200 according to this embodiment of the present disclosure is described below with reference to fig. 9. The electronic device 200 shown in fig. 9 is only an example, and should not bring any limitation to the functions and the scope of use of the embodiments of the present disclosure.
As shown in fig. 9, the electronic device 200 is embodied in the form of a general purpose computing device. The components of the electronic device 200 may include, but are not limited to: at least one processing unit 210, at least one memory unit 220, a bus 230 connecting different system components (including the memory unit 220 and the processing unit 210), a display unit 240, and the like.
Wherein the storage unit stores program code executable by the processing unit 210 to cause the processing unit 210 to perform the steps according to various exemplary embodiments of the present disclosure described in the above-mentioned electronic prescription flow processing method section of the present specification. For example, the processing unit 210 may perform the steps as shown in fig. 1, 2, 4, 5.
The storage unit 220 may include readable media in the form of volatile storage units, such as a random access memory unit (RAM) 2201 and/or a cache memory unit 2202, and may further include a read only memory unit (ROM) 2203.
The storage unit 220 may also include a program/utility 2204 having a set (at least one) of program modules 2205, such program modules 2205 including, but not limited to: an operating system, one or more application programs, other program modules, and program data, each of which, or some combination thereof, may comprise an implementation of a network environment.
The electronic device 200 may also communicate with one or more external devices 300 (e.g., keyboard, pointing device, bluetooth device, etc.), with one or more devices that enable a user to interact with the electronic device 200, and/or with any devices (e.g., router, modem, etc.) that enable the electronic device 200 to communicate with one or more other computing devices. Such communication may occur through input/output (I/O) interfaces 250. Also, the electronic device 200 may communicate with one or more networks (e.g., a Local Area Network (LAN), a Wide Area Network (WAN), and/or a public network such as the Internet) via the network adapter 260. The network adapter 260 may communicate with other modules of the electronic device 200 via the bus 230. It should be appreciated that although not shown in the figures, other hardware and/or software modules may be used in conjunction with the electronic device 200, including but not limited to: microcode, device drivers, redundant processing units, external disk drive arrays, RAID systems, tape drives, and data backup storage systems, among others.
Through the above description of the embodiments, those skilled in the art will readily understand that the exemplary embodiments described herein may be implemented by software, or by software in combination with necessary hardware. Therefore, the technical solution according to the embodiments of the present disclosure may be embodied in the form of a software product, which may be stored in a non-volatile storage medium (which may be a CD-ROM, a usb disk, a removable hard disk, etc.) or on a network, and includes several instructions to enable a computing device (which may be a personal computer, a server, or a network device, etc.) to execute the above method according to the embodiments of the present disclosure.
FIG. 10 schematically illustrates a computer-readable storage medium in an exemplary embodiment of the disclosure.
Referring to fig. 10, a program product 400 for implementing the above method according to an embodiment of the present disclosure is described, which may employ a portable compact disc read only memory (CD-ROM) and include program code, and may be run on a terminal device, such as a personal computer. However, the program product of the present disclosure is not limited thereto, and in this document, a readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device.
The program product may employ any combination of one or more readable media. The readable medium may be a readable signal medium or a readable storage medium. A readable storage medium may be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination of the foregoing. More specific examples (a non-exhaustive list) of the readable storage medium include: an electrical connection having one or more wires, a portable disk, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.
The computer readable medium carries one or more programs which, when executed by a device, cause the computer readable medium to perform the functions of: constructing a three-dimensional circuit model of the target circuit, wherein the three-dimensional circuit model comprises a sensitive area; inputting the three-dimensional circuit model into nuclear reaction calculation simulation software to obtain nuclear reaction secondary ions generated in a sensitive area under the preset single particle energy; acquiring a single-particle transient pulse waveform output by nuclear reaction secondary ion action on a sensitive area through device simulation software; loading a single-particle transient pulse waveform onto a target circuit in an equivalent current source mode to acquire circuit response information; and evaluating the single event effect of the target circuit through the circuit response information.
Exemplary embodiments of the present disclosure are specifically illustrated and described above. It is to be understood that the present disclosure is not limited to the precise arrangements, instrumentalities, or instrumentalities described herein; on the contrary, the disclosure is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (8)
1. A single event effect evaluation method is characterized by comprising the following steps:
constructing a three-dimensional circuit model of a target circuit, wherein the three-dimensional circuit model comprises a sensitive area;
inputting the three-dimensional circuit model into nuclear reaction calculation simulation software to obtain nuclear reaction secondary ions generated in the sensitive area under the preset single particle energy;
acquiring a single-particle transient pulse waveform output by the nuclear reaction secondary ion acting on the sensitive region through device simulation software;
loading the single-particle transient pulse waveform onto the target circuit in the form of an equivalent current source to acquire circuit response information; and
evaluating the single event effect of the target circuit through the circuit response information,
obtaining the single-particle transient pulse waveform output by the nuclear reaction secondary ion action on the sensitive area through device simulation software comprises the following steps:
establishing a sensitive area model in process computer aided design software;
setting an input source of the process computer-aided design software according to the nuclear reaction secondary ions; and
obtaining the single-event transient pulse waveform generated on the sensitive region model according to simulation calculation,
loading the single-event transient pulse waveform onto the target circuit in the form of an equivalent current source, wherein the step of acquiring circuit response information comprises the following steps:
establishing a two-dimensional circuit model according to the circuit structure of the target circuit; and
and loading the single-particle transient pulse waveform onto the two-dimensional circuit model in the form of an equivalent current source to obtain circuit response information.
2. The method of claim 1, wherein constructing a three-dimensional circuit model of a target circuit comprises:
and constructing the three-dimensional circuit model through the geometric parameters and the physical parameters of the target circuit.
3. The method of claim 2, wherein constructing the three-dimensional circuit model from the geometric and physical parameters of the target circuit comprises:
obtaining the layout of a storage unit in the target circuit and the size of a transistor in the storage unit through plane analysis to generate the geometric parameters of the target circuit; and
and obtaining the thickness and the element composition of each layer in the target circuit through longitudinal cutting analysis so as to generate the physical parameters of the target circuit.
4. The method of any one of claims 1-3, wherein inputting the three-dimensional circuit model into nuclear reaction computational simulation software, and wherein acquiring nuclear reaction secondary ions generated in the sensitive region at a predetermined single particle energy comprises:
inputting the three-dimensional circuit model into Monte Carlo simulation software;
setting preset single particle energy in Monte Carlo simulation software; and
and acquiring nuclear reaction secondary ions generated in the sensitive region and related information thereof according to simulation calculation, wherein the related information of the secondary ions comprises a linear energy transfer value, an incident angle and a range of the secondary ions.
5. The method of any one of claims 1-3, wherein modeling the sensitive region in process computer-aided design software comprises:
acquiring the size of a transistor in a storage unit of the target circuit; and
and establishing a sensitive area model in process computer aided design software according to the size of the transistor.
6. The method of any of claims 1-3, wherein the two-dimensional circuit model includes a sensitive point;
loading the single-event transient pulse waveform onto a two-dimensional circuit model of the target circuit in the form of an equivalent current source comprises:
and loading the single-particle transient pulse waveform to the sensitive point of the two-dimensional circuit model in the form of an equivalent current source.
7. The method of any one of claims 1-3, wherein evaluating a single event effect of the target circuit via the circuit response information comprises:
calculating the single-particle upset section of the target circuit according to the circuit response information; and/or
Calculating the soft error rate of the target circuit through the circuit response information.
8. A single event effect evaluation device, comprising:
the model module is used for constructing a three-dimensional circuit model of the target circuit, and the three-dimensional circuit model comprises a sensitive area;
the nuclear reaction calculation simulation module is used for inputting the three-dimensional circuit model into nuclear reaction calculation simulation software to obtain nuclear reaction secondary ions generated in the sensitive area under the preset single particle energy;
the device simulation module is used for acquiring a single-particle transient pulse waveform output by the nuclear reaction secondary ion acting on the sensitive area through device simulation software;
the circuit simulation module is used for loading the single-particle transient pulse waveform onto the target circuit in an equivalent current source form and acquiring circuit response information; and
the evaluation module is used for evaluating the single event effect of the target circuit through the circuit response information,
the device simulation module is used for:
establishing a sensitive area model in process computer aided design software;
setting an input source of the process computer-aided design software according to the nuclear reaction secondary ions; and
obtaining the single-event transient pulse waveform generated on the sensitive region model according to simulation calculation,
the circuit emulation module is configured to:
establishing a two-dimensional circuit model according to the circuit structure of the target circuit; and
and loading the single-particle transient pulse waveform onto the two-dimensional circuit model in an equivalent current source mode to obtain circuit response information.
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| CN112230081B (en) * | 2020-09-17 | 2023-08-25 | 兰州空间技术物理研究所 | Equivalent LET calculation method for pulse laser single event effect test |
| CN112858891B (en) * | 2021-02-25 | 2022-06-07 | 中国人民解放军国防科技大学 | Automatic detection method for circuit sensitive node |
| CN114626205B (en) * | 2022-02-18 | 2024-04-26 | 西北核技术研究所 | Simulation method and simulation device for radiation transient response of area array photoelectric image sensor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103577643A (en) * | 2013-11-06 | 2014-02-12 | 中国空间技术研究院 | SRAM type FPGA single event upset effect simulation method |
| CN104881519A (en) * | 2015-04-30 | 2015-09-02 | 北京空间飞行器总体设计部 | Single-event upset effect distinguishing method based on circuit simulation |
| CN107832556A (en) * | 2017-11-24 | 2018-03-23 | 湘潭大学 | A kind of single-particle inversion appraisal procedure and device |
-
2018
- 2018-11-14 CN CN201811357662.9A patent/CN109657272B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103577643A (en) * | 2013-11-06 | 2014-02-12 | 中国空间技术研究院 | SRAM type FPGA single event upset effect simulation method |
| CN104881519A (en) * | 2015-04-30 | 2015-09-02 | 北京空间飞行器总体设计部 | Single-event upset effect distinguishing method based on circuit simulation |
| CN107832556A (en) * | 2017-11-24 | 2018-03-23 | 湘潭大学 | A kind of single-particle inversion appraisal procedure and device |
Non-Patent Citations (1)
| Title |
|---|
| 基于地面加速测试的大气中子软错误率评估方法研究;彭超;《电子产品可靠性与环境试验》;20171031;第60-64页 * |
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