CN106649920A - IBIS-based integrated circuit total dose effect modeling method - Google Patents
IBIS-based integrated circuit total dose effect modeling method Download PDFInfo
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
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Abstract
The invention discloses an IBIS-based integrated circuit total dose effect modeling method. The IBIS-based integrated circuit total dose effect modeling method comprises the steps of performing irradiation on an original electronic device by adopting different target accumulated doses; performing data measurement and model extraction on the irradiated original electronic device, and establishing an IBIS model database of the electronic device under all the target accumulated doses; under the condition of giving a total irradiation dose D, performing interpolation operation on the established model database of the device according to the total irradiation dose D to obtain VI and VT interpolation data under the irradiation dose, and building an IBIS model according to the interpolation data, namely, an IBIS irradiation total dose effect model of the device under the irradiation dose. According to the method, the influence of irradiation conditions on PCB signal integrity is considered based on original PCB signal integrity analysis, and model support is provided for performing simulation analysis of PCB signal integrity problem under the irradiation condition.
Description
Technical field
The invention belongs to the modeling technique field of device irradiation effect model, more particularly to a kind of integrated electricity based on IBIS
Road total dose effect modeling method.
Background technology
At present, in order to meet requirement of the people to electronics miniaturization and multifunction, printed circuit board (PCB) is positive
At high speed, high density, high integration direction are developed.When signal rate and density of components are improved to a certain extent, on PCB
Ghost effect can cause noise and interference, the work that PCB cannot be good in transmission signal.This is required in electronic product
The PCB design phase of exploitation must just carry out good signal integrity simulation design.Device model used during emulation will be straight
Connecing affects the precision of emulation.Now industry widely used device model when signal integrity simulation is carried out is IBIS models
(a kind of method quick and precisely modeled to I/O buffers based on V/I curves), hinder present in high speed circuit board by being analyzed
Anti- matching problem, the method for solving problems of Signal Integrity is given using simulation software.However, existing signal integrity simulation
Software can only be given under normal condition (without radiation parameter), the signal integrity analysis strategy of PCB, and cannot be to PCB in total agent
Problems of Signal Integrity in the case of graded effect carries out simulation analysis.Total dose effect refers to that semiconductor devices is chronically at radiation
Under environment, in insulating barrier (mainly oxide layer) accumulation the phenomenon of oxide-trapped charge and heterointerface state charge is formed.It is this tired
Product effect can cause performance of semiconductor device to degenerate, including drift, mobility decline, the increase of leakage current of device threshold voltage
Deng.Therefore when the circuit under to space environment, nuclear blast environment carries out signal integrity analysis, it is necessary to consider irradiation to circuit
Signal integrity affect.
In sum, existing signal integrity simulation software can only be given under normal condition (without radiation parameter), PCB's
Signal integrity analysis strategy, and simulation analysis cannot be carried out to problems of Signal Integrity of the PCB in the case of total dose effect.
The content of the invention
It is an object of the invention to provide a kind of integrated circuit total dose effect modeling method based on IBIS, it is intended to solve
Existing signal integrity simulation software can only be given under normal condition (without radiation parameter), the signal integrity analysis plan of PCB
Slightly, the problem of simulation analysis cannot be carried out to problems of Signal Integrity of the PCB in the case of total dose effect.
The present invention is achieved in that a kind of integrated circuit total dose effect modeling method based on IBIS, described to be based on
The integrated circuit total dose effect modeling method of IBIS is that different target accumulated dosage are respectively adopted to original electron device to enter
Row irradiation, obtains the damage situations of device under different irradiation doses；DATA REASONING is carried out to the device after irradiation, according to survey
Amount data carry out respectively model extraction to the original electron device after irradiation, build electronics device under target complete integral dose
The IBIS model databases of part；In the case of given irradiation accumulated dose D, the device model database for building is entered according to D
Row interpolation is operated, and obtains the interpolated datas such as VI and VT under the irradiation dose, and builds IBIS models according to interpolated data, i.e., should
The IBIS total dose effect models of device under irradiation dose.
Further, by the original electron device for obtaining IBIS models and obtain through target complete intergal dose irradiation
The IBIS models of electronic device afterwards collectively form the device model database related to integral dose radiation.
Further, it is possible to carry out irradiation using the close rate of 100rad (Si)/s, 168 hours 100 DEG C of high annealings are carried out
Process, obtain the IBIS model data files under target dose.
Further, VT data are entered row interpolation and are specifically included：
VT data in IBIS data files under each irradiation dose are carried out with unitized operation；I.e. to VT data
Speech, merges the time T in all IBIS files, and removes the timing node for wherein repeating, finally draw one it is unified when
Between T distribution；
The different irradiation doses similarly hereinafter corresponding voltage datas of a timing node T are extracted for VT data；
Given irradiation dose D, according to the data that every a line is provided interpolation operation is carried out, and is obtained under time point T, the spoke
According to the corresponding magnitude of voltage V of dosage D.
Another object of the present invention is to provide a kind of using the integrated circuit total dose effect modeling based on IBIS
The side of device inputoutput buffer modeling under the total dose effect model and a kind of pervasive radiation parameter of method structure PCB
Method.
The integrated circuit total dose effect modeling method based on IBIS that the present invention is provided, is to integrated under radiation parameter
The method that circuit carries out inputoutput buffer modeling, the IBIS irradiation effect models set up can be directly used under radiation parameter
The simulation analysis of the problems of Signal Integrity of PCB.
Description of the drawings
Fig. 1 is the element total dose effect modeling method flow chart based on IBIS provided in an embodiment of the present invention.
Fig. 2 is the flow chart of embodiment provided in an embodiment of the present invention 1.
Fig. 3 is IBIS model datas instrumentation plan provided in an embodiment of the present invention.
Fig. 4 be IBIS provided in an embodiment of the present invention VT data in the unitized schematic diagram of T standards；
The left side represents the distribution of VT timing node T in the corresponding ibis model data files of different irradiation doses in figure,
The right represents and removes the unitized timing node distribution formed after repetition time node in all IBIS files；This time T
Distribution using as the T in VT data in all IBIS files.
Fig. 5 is the signal that the original VT data of IBIS provided in an embodiment of the present invention are standardized according to the T after unitizing
Figure；
The left side represents the distribution of the time T after unitizing in figure, and the right represents and is distributed to each according to new timing node
Voltage data V in IBIS files enters the new VT data that row interpolation is obtained.Wherein v ' parts represent the value of new insertion.
Fig. 6 is the tables of data trrellis diagram of different irradiation dose corresponding voltages V under same time T provided in an embodiment of the present invention.
Fig. 7 is provided in an embodiment of the present invention after given irradiation dose D, is carried out according to the unitized rear model data of standard
The schematic diagram of interpolation.
The row that wherein d ' is located represent the value inserted under different time points.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that specific embodiment described herein is not used to only to explain the present invention
Limit the present invention.
The application principle of the present invention is explained in detail below in conjunction with the accompanying drawings.
As shown in figure 1, the integrated circuit total dose effect modeling method based on IBIS provided in an embodiment of the present invention includes
Following steps：
S101：Select certain electronic device on the market or design a kind of electronic device as original electron device；
S102：Carry out testing the test data for obtaining original electron device according to original electron device, according to test data
Model construction is carried out to original electron device, the IBIS models of original electron device are obtained；
S103:Different target intergal dose is respectively adopted to original electron device carries out irradiation；
S104:Original electron device through different target intergal dose irradiation is carried out testing respectively to obtain new test
Data, according to new test data model extraction is carried out respectively to the original electron device after irradiation, obtains target complete
The IBIS models of the electronic device after integral dose irradiation；
S105：By the original electron device for obtaining IBIS models and obtain after target complete intergal dose irradiation
The IBIS models of electronic device collectively form the device model database related to integral dose radiation；
S106：In the case of given irradiation accumulated dose D, row interpolation behaviour is entered according to the device model database built in D
Make, obtain VI the and VT data under the irradiation dose, according to new data new IBIS models, i.e. device under the irradiation dose are built
The IBIS irradiation accumulated dose models of part.
The application principle of the present invention is further described with reference to specific embodiment.
The flow chart with reference to shown in Fig. 2, by taking non-reinforced transistor as an example, illustrates the specific implementation process of the present invention.
First of all for being modeled, need to choose original electron device, initial devices can select existing on the market
Device, it is also possible to oneself manufacture and design a kind of electronic device.Original electron device is obtained in the original electricity not plus in the case of irradiation
The IBIS models of sub- device, can be using SPICE emulation modes or real devices method measured directly, as shown in figure 3, surveying
(IV data represent current-voltage correlation, including pull up drop-down I/V data and power supply and GND clamps to obtain its IV data, VT data
Data；VT data represent voltage versus time, including the VT data and the VT data of falling waveform of rising waveform) etc., by data
Typing IBIS files, complete the establishment of model (for the device bought on the market, directly can also obtain original from producer there
The IBIS models of device).
Setting up the IBIS models of a device generally needs following step：
(1) preparation set up before model is carried out.This is included：The complexity of decision model；Will according to model
The content of performance and the environment of element manipulation the factor such as limit determining voltage and temperature range and processing procedure；Obtain element phase
Pass information, such as electrical characteristic and pin are distributed；The application message of device.
(2) after completing work above, next seek to obtain the data of I-V curve or rise/fall curve, this
Can be obtained by direct measurement or emulation.
(3) data for obtaining are write into IBIS models.Different data are listed after respective keyword, it should be noted that
Meet the grammar request of IBIS.
(4) tentatively establish after model, the V/I curves for showing to graphically should be checked with instruments such as s2iplt,
And whether the grammer of inspection model is correct.If model is obtained by emulation, should respectively with IBIS models and initial
Transistor-level model is emulated, and is compared as a result, with the correctness of testing model.
(5) after having obtained the device of reality, or if model is obtained by measurement, to the output waveform of model and
The waveform of measurement is compared.
In order to obtain the device model after certain intergal dose irradiation, need to carry out target accumulated agent to initial devices
The irradiation of amount.It is to estimate under applied environment irradiation to device with the mode of simulated test to the purpose that device carries out total dose irradiation
Impact, for different applications, the dosage of the integral dose radiation that device undergoes is different.For space application environment, device
The part in-orbit cycle experiences the intergal dose of radiation in the range of 10krad (Si) to 1000krad (Si).And under space environment
Radiation dose rate (i.e. the dose of radiation of unit interval) be very low (much smaller than 1rad (Si)/s), if in so low agent
Irradiation test is carried out under dose rate, substantial amounts of experimental period is needed, is that manpower and materials are difficult to bear.Due in higher close rate
Under carry out irradiation, the result then annealed with the result of irradiation is directly carried out under LDR very close to therefore generally
Irradiation test is carried out under higher close rate.For example in actual tests, the agent of 100rad (Si)/s can be adopted
Dose rate carries out irradiation, then carries out the mode of 168 hours 100 DEG C of high annealings.It is now assumed that applied environment is certain Aerospace Satellite
Track, in test can be with selection target intergal dose：10krad(Si)、30krad(Si)、60krad(Si)、100krad
(Si), (selection of target accumulated dosage is needed according to practical application for 300krad (Si), 600krad (Si), 1000krad (Si)
Environment enters Mobile state adjustment, to can uniformly be distributed in the range of whole irradiation dose).Radiate in space application environment
Close rate very low (being much smaller than 1rad (Si)/s), and the irradiation speed under LDR is very slow, to reach the target of above-mentioned selection
Intergal dose takes long enough, and here by taking the accumulated dose of 100krad (Si) as an example, is entered using the close rate of 100rad (Si)/s
Row irradiation, then carries out 168 hours 100 DEG C of the high temperature anneals.For the device after radiation treatment reaches target accumulated dose
Part carries out being operated with identical DATA REASONING as previously mentioned, and builds new IBIS irradiation model files, is thus somebody's turn to do
IBIS model data file of the device in the case where target dose is 100krad (Si).Using method same as described above, it is possible to obtain
IBIS model data files under other 6 target doses.So far, with reference to the original I BIS model data file of the device, just
Establish IBIS model database of the device under 0krad (Si)～1000krad (Si) irradiation dose.
After having IBIS model databases, it is possible to give the target accumulated dose (target dose in this example of a certain care
Scope be 0krad (Si)～1000krad (Si)), the IBIS spokes of device under the accumulated dose are then obtained using the method for interpolation
According to effect model.The process of row interpolation is entered in the introduction of lower mask body to VT data：
(1) distribution of uniform data：VT data in IBIS data files under each irradiation dose are unified
Change operation, i.e., for VT data, merge the time T in all IBIS files, and remove the timing node for wherein repeating, most
The distribution of a unified time T is drawn eventually, as shown in figure 4, and then being lacked for each IBIS files polishing with the method for interpolation
The time corresponding voltage of mistake, as a result as shown in Figure 5.
(2) the different irradiation doses similarly hereinafter corresponding voltage datas of a timing node T are extracted for VT data, is formed such as Fig. 6 institutes
The data form for showing.In the data form, the corresponding magnitude of voltage V of difference irradiation dose under same time point T is represented per a line.
(3) irradiation dose D is given, the data that the every a line in step (2) is provided carry out interpolation operation, obtain at this
Under time point T, the corresponding magnitude of voltage V of irradiation dose D are inserted with identical interpolation method for remaining other times node
Value, the result after interpolation is as shown in Figure 7.
For the Interpolation Process of VI data also has identical data manipulation, due to the voltage of Pulldown and Pullup data
Sweep limits is different, therefore during Interpolation Process in unified voltage distribution and afterwards, needs separate operation.
After interpolation obtains the corresponding VT and VI data of irradiation dose D, using the given irradiation dose of these data configurations
Under IBIS irradiation effect models, so far IBIS irradiation accumulated dose Construction of A Model is finished (for the other values in model, can recognize
It under different irradiation doses is changeless to be, therefore can be directly used for constructing IBIS irradiation effect models).
Presently preferred embodiments of the present invention is the foregoing is only, not to limit the present invention, all essences in the present invention
Any modification, equivalent and improvement made within god and principle etc., should be included within the scope of the present invention.
Claims (5)
1. a kind of integrated circuit total dose effect modeling method based on IBIS, it is characterised in that described based on the integrated of IBIS
Circuit total dose effect modeling method is that different target accumulated dosage are respectively adopted to original electron device to carry out irradiation, is obtained
The damage situations of device under different irradiation doses；DATA REASONING is carried out to the device after irradiation, according to measurement data to Jing
The original electron device crossed after irradiation carries out respectively model extraction, builds the IBIS moulds of electronic device under target complete integral dose
Type database；In the case of given irradiation accumulated dose D, interpolation operation is carried out to the device model database for building according to D,
VI the and VT interpolated datas under the irradiation dose are obtained, and device under IBIS models, the i.e. irradiation dose is built according to interpolated data
The IBIS total dose effect models of part.
2. the integrated circuit total dose effect modeling method of IBIS is based on as claimed in claim 1, it is characterised in that by original
The IBIS models of the IBIS models of electronic device and the electronic device after different target intergal dose irradiation collectively form with
The related device IBIS model databases of integral dose radiation.
3. the integrated circuit total dose effect modeling method of IBIS is based on as claimed in claim 1, it is characterised in that to passing through
Electronic device after certain target dose irradiation carries out the measurement of VI and VT IBIS data, builds the target dose radiation parameter
Under electronic device IBIS model data files.
4. the element total dose effect modeling method of IBIS is based on as claimed in claim 1, it is characterised in that to VT IBIS
Model data enters the operation of row interpolation, specifically includes：
VT data in IBIS data files under each irradiation dose are carried out with unitized operation；I.e. for VT data,
Merge the time T in all IBIS files, and remove the timing node for wherein repeating, finally draw a unified time T
Distribution；
The different irradiation doses similarly hereinafter corresponding voltage datas of a timing node T are extracted for VT data；
Given irradiation dose D, according to the voltage data V of various dose under same timing node T interpolation operation is carried out, under obtaining D
The corresponding voltage V of time T, are that remaining other times node carries out interpolation operation under D with identical interpolation method, obtain spoke
According to the IBIS data models of the device under dosage D.
5. the integrated circuit total dose effect modeling method structure of IBIS is based on described in a kind of utilization claim 1～4 any one
That what is built carries out the integrated circuit total dose effect model needed for the analysis of PCB signal integrity simulations under radiation parameter.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108037438A (en) * | 2017-12-13 | 2018-05-15 | 中国科学院新疆理化技术研究所 | The test method that a kind of total dose irradiation influences PMOSFET Negative Bias Temperature Instabilities |
| CN112232007A (en) * | 2020-10-14 | 2021-01-15 | 西安交通大学 | System-level simulation method for total dose effect of electronic system |
| CN113049947A (en) * | 2021-04-02 | 2021-06-29 | 西安电子科技大学 | Method for measuring I/V curve in IBIS model |
| CN113341761A (en) * | 2021-05-20 | 2021-09-03 | 西安电子科技大学 | Modeling method and system for total dose effect of CMOS digital integrated circuit |
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| CN108037438A (en) * | 2017-12-13 | 2018-05-15 | 中国科学院新疆理化技术研究所 | The test method that a kind of total dose irradiation influences PMOSFET Negative Bias Temperature Instabilities |
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| CN113049947A (en) * | 2021-04-02 | 2021-06-29 | 西安电子科技大学 | Method for measuring I/V curve in IBIS model |
| CN113341761A (en) * | 2021-05-20 | 2021-09-03 | 西安电子科技大学 | Modeling method and system for total dose effect of CMOS digital integrated circuit |
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Application publication date: 20170510 |