CN101551831B - A device modeling method in relation to total dose radiation - Google Patents
A device modeling method in relation to total dose radiation Download PDFInfo
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- CN101551831B CN101551831B CN2009100789100A CN200910078910A CN101551831B CN 101551831 B CN101551831 B CN 101551831B CN 2009100789100 A CN2009100789100 A CN 2009100789100A CN 200910078910 A CN200910078910 A CN 200910078910A CN 101551831 B CN101551831 B CN 101551831B
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Abstract
A device modeling method in relation to total dose radiation, wherein firstly, an original electronic device is designed and undergoes testing and model extraction to obtain the model of the original device, secondly, the obtained original device undergoes radiation at different target cumulative doses and model extraction to obtain the device model after radiation at all target cumulative doses, and lastly, the obtained original device model and the device model that has received radiation at all target cumulative doses jointly constitute the device model in relation to total dose radiation. Through testing and parameter extraction of the original device and the device that has received radiation at all target cumulative doses, the present invention provides a method for accurate modelingof hardened devices and unhardened devices. Meanwhile it adds radiation dose as a variable into the realization method of device model so that the performance of the circuit that has received radiati on at different doses can be accurately predicted through simulation, thus raising the design efficiency and success rate of the circuits.
Description
Technical field
The present invention relates to a kind of device modeling method, especially a kind of device modeling method relevant with integral dose radiation.
Background technology
When designing integrated circuit, need carry out emulation to designed circuit structure usually, certain estimating be arranged in the hope of function and performance before the circuit manufacturing to circuit.Used device model directly influences the precision of emulation during emulation.So-called device model is exactly the set of a series of electrical parameters and physical parameter, utilizes the abstract parameter of these simplification to come the true Devices Characteristics of Simulation of Complex.A good device model is the key factor that guarantees the circuit design success.
Total dose effect is meant that semiconductor devices is under the radiation environment for a long time, forms the phenomenon of oxide trap electric charge and interface state electric charge in insulation course (mainly being oxide layer) accumulation.Performance of semiconductor device that this cumulative effect can cause is degenerated, and comprises that the drift of device threshold voltage, mobility descend, the increase of leakage current etc.Do not take circuit performance after the certain integral dose of experience of reinforcement measure can be subjected to very big influence, even disabler occurs.Therefore various reinforcement means and device architecture have appearred.Two problems have appearred this moment.One is the modeling problem of reinforcing device itself.As shown in Figure 1, wherein A is traditional non-reinforcing transistor arrangement, and B is for adopting the reinforcing transistor arrangement of closed grid.Because the difference of shape, the Electric Field Distribution of device inside also has a great difference, so the model parameter of B structure just should be different with the A structure.And current circuit designers can only be taken the model parameter of A structure usually from technology factory, therefore is necessary the structure as B is carried out modeling.The another one problem is, no matter is the conventional structure as A, still ruggedized construction as B, and variation in various degree all can take place in its device parameters behind the irradiation that experiences certain integral dose.Fig. 2 has provided and has reinforced device and the transfer characteristic curve (I of non-reinforcing device before and after radiation
D-V
G) variation, as seen from the figure, reinforce device and non-reinforcing device characteristic before and after radiation great change all taken place, if only use the device model before the radiation, can not estimate the performance of device after radiation.Therefore, the modeling that device is experienced behind the different integral dose irradiation is equally very necessary.
The existing device modeling method relevant with integral dose radiation is by virtue of experience to make up the model of reinforcing device and the model that changes with accumulated dose with a spot of test figure mostly.Such as, the modeling method of the closed gate transistor of common reinforcing device is the device size that goes out equivalence according to certain Rule Extraction, adopts the device model of conventional non-reinforcing to carry out emulation then.As previously mentioned, this level that reaches higher that the model accuracy of reinforcing device and the equivalence of non-reinforcing device is difficult to.In addition, prior art is for the device modeling of implicating long-pending dosimetry parameter, often just the low volume data that obtains is carried out match, such as a transistor to certain size, under certain bias voltage, test and test, and carry out the device modeling with these data that obtain, this rough method is difficult to the characteristic of accurate analog device itself, makes that the simulation accuracy of circuit is not high.
Summary of the invention
Technology of the present invention is dealt with problems and is: overcome the deficiencies in the prior art, a kind of device modeling method relevant with integral dose radiation is provided, solve the modeling problem of various electron devices before and after different integral dose radiation, improved the design efficiency and the success ratio of circuit.
Technical solution of the present invention is: a kind of device modeling method relevant with integral dose radiation comprises the steps:
(1) the design electron device is as the original electron device;
(2) test the test data that obtains the original electron device according to the original electron device of step (1) design, according to test data the original electron device is carried out model and extract, obtain the device model of original electron device;
(3) the original electron device to step (1) design adopts the different target integral dose to carry out irradiation respectively;
(4) obtain new test data to testing respectively through the original electron device of different target integral dose irradiation, extract carrying out model respectively according to new test data, obtain through the electron device model behind the target complete integral dose irradiation through the original electron device behind the irradiation;
(5) the electron device model through behind the target complete integral dose irradiation that obtains of the device model of the original electron device that is obtained by step (2) and step (4) is common constitutes the device model relevant with integral dose radiation, thereby finishes the device modeling process relevant with integral dose radiation.
The present invention's advantage compared with prior art is: the present invention improves existing modeling method, a kind of device modeling method relevant with integral dose radiation proposed, by being tested with model, extracts by the original electron device, obtain the model of original electron device, simultaneously the original electron device is carried out different target integral dose irradiation respectively and test with model and extract, device model behind the acquisition target complete integral dose irradiation, thereby obtain the device model relevant with integral dose radiation, solved the modeling problem of various devices before and after different integral dose radiation, the present invention by to original device soft copy with the experience different integral dose irradiation after device test and parameter extraction, provided the method for reinforcing and non-reinforcing device carries out accurate modeling, also radiation dose is joined implementation in the device model as a variable simultaneously, make by the accurate performance of anticipator circuit after the radiation of experiencing various dose of emulation, thus the design efficiency and the success ratio of raising circuit.Simultaneously because the present invention tests with model the reinforcing device of identical type different size and non-reinforcing device extracts, increased the fitting precision of data, improve the accuracy of model, when irradiation, adopted the dose rate of applied environment, made the more approaching real situation of model.
Description of drawings
Fig. 1 is non-reinforcing transistor A and reinforces the planimetric map of transistor B structure;
Fig. 2 is for reinforcing and the transfer characteristics (I of non-reinforcing transistor before and after radiation
D-V
G) curve;
Fig. 3 is a process flow diagram of the present invention;
Fig. 4 is that the embodiment of the invention is at the transfer characteristic curve under the most bad biasing, behind the different integral dose predose.
Embodiment
Method of the present invention is applicable to the reinforcing device, also is applicable to non-reinforcing device, and wherein device can be an active device, as transistor etc., also can be passive device, as electric capacity, and resistance etc.Below in conjunction with process flow diagram shown in Figure 3, be example with non-reinforcing transistor, specific implementation process of the present invention is described.At first in order to carry out modeling, design is also made a kind of original electron device, as non-reinforcing transistor, in order to reach higher modeling accuracy, every cover transistor has designed 8 kinds of length, the 8 kinds of width device of totally 64 identical type different sizes altogether, utilize layout tool to design the domain of each device, and each electrode of each device is extracted so that test and test.These 64 original devices are tested respectively, obtained current/voltage (IV) characteristic and capacitance voltage (CV) characteristic of 64 original devices.Next carrying out device model according to the resulting test data of test extracts.So-called model extracts, and is exactly according to electronic device characteristics, extracts the device model that has a series of electrical parameters and physical parameter, makes to utilize the electrology characteristic that resulting device model can the real simulation electron device.The original electron device is carried out method that model extracts to be had multiplely, for example adopts the IC-CAP test of Agilent company with extracting tool non-reinforcing transistor to be carried out model in the present embodiment and extracts.In order to obtain higher precision, the transistor main models parameter extracted (for example threshold voltage, saturation current, by electric current etc.) has been carried out numerical fitting, and the control error of fitting is in 5%, thereby obtains the device model of accurate original device.
In order to obtain to carry out target accumulated dosage irradiation to original device through the device model behind certain integral dose irradiation.The purpose that device is carried out total dose irradiation is to estimate in the mode of simulation test that radiation is to the influence of device under the applied environment, and for different application, the dosage of the integral dose radiation that device stands is different.For the space applied environment, device the integral dose of rail radiation that the cycle is experienced at 10krad (Si) in the scope of 1000krad (Si).And the radiation dose rate under the space environment (being the radiation dose of unit interval) is that very low (much smaller than 1rad (Si)/s), if carry out irradiation test under so low dose rate, needing a large amount of test periods, is that manpower and materials are difficult to bear.Owing to carry out irradiation under higher dose rate, the result who anneals then is very approaching with the result who directly carries out irradiation under LDR, and therefore irradiation test all is to carry out under higher dose rate usually.In the present embodiment, adopt the dose rate of 100rad (Si)/s to carry out irradiation, carry out the mode of 168 hours 100 ℃ of high annealings then.Suppose that applied environment is certain Aerospace Satellite track, and the integral dose of being concerned about is: 100krad (Si), 200krad (Si) and 600krad (Si).The dose rate of radiation is very low (much smaller than 1rad (Si)/s) in the applied environment of space, and the irradiation speed under the LDR is very slow, for the integral dose that reaches above-mentioned care needs the very long time, therefore adopt the dose rate of 100rad (Si)/s to carry out irradiation here, carry out 168 hours 100 ℃ of The high temperature anneal then.In carrying out 100krad (Si) integral dose irradiation process 64 original devices are biased in respectively under the most bad and the optimal situation, device choosing of bias point when irradiation should be determined according to the applicable cases of device with to the accuracy requirement of device model.For the transistor in the present embodiment, the most bad grid that is biased to connects ceiling voltage, and source electrode and drain electrode all connect minimum voltage.Optimum is biased to all utmost points and all connects potential minimum.Wherein the process of irradiation and annealing is referring to GJB 762.2-90 " test of semiconductor devices radiation hardened test method γ total dose irradiation ".Then to test current/voltage (IV) characteristic and capacitance voltage (CV) characteristic that obtains the device behind 64 irradiation through the device behind 100krad (Si) the integral dose irradiation, carrying out model according to the data of test extracts, to the transistor main models parameter extracted (threshold voltage for example, saturation current, by electric current etc.) carried out match, and the control error of fitting is in 5%, thereby obtain the device model behind accurate 100krad (Si) the integral dose irradiation, consistent with the method that the test and the model of original device extract to testing with the method for extracting through the device of target accumulated dosage irradiation.So, the device model behind acquisition 100krad (Si) the integral dose irradiation.Obtain the device model behind 200krad (Si) and 600krad (Si) the integral dose irradiation then successively respectively.At this moment, the model behind the integral dose irradiation of all care extracts and all finishes, and non-reinforcing transistor modeling is finished.
For the present invention is verified, design a verifying parts, this device is identical with above-mentioned 64 kinds of original part categories, the size difference, Fig. 4 has provided this device under the most bad biasing, transfer characteristic curve behind the different integral dose predoses, there is shown this verifying parts predose, through 100krad (Si), analog result and test data behind 200krad (Si) and 600krad (Si) the integral dose irradiation, wherein solid line carries out Simulation result for the model that adopts the inventive method to extract, dotted line (symbol logo) is a test data, as seen from the figure, the precision of the device model of being set up by modeling method of the present invention is very high, and error is in 5%.
Foregoing has provided a typical relatively example, in fact adopt the embodiment of modeling method of the present invention a lot, such as electron device can also be mos capacitance, diode, resistance etc., for example the test data of electric capacity is the appearance value of electric capacity, the model that carries out according to capacitance extracts then, thereby set up the model of electric capacity, and then electric capacity is carried out target accumulated dosage irradiation, the capacitor model behind the acquisition irradiation.In order to reach higher precision, original size of devices can also be divided carefullyyer, and the bias conditions of device may be more complicated, and the integral dose point of care is more, also can adopt modeling method of the present invention to obtain device model for reinforcing device, detailed process is identical with non-reinforcing device.
The present invention not detailed description is a technology as well known to those skilled in the art.
Claims (5)
1. a device modeling method relevant with integral dose radiation is characterized in that comprising the steps:
(1) the design electron device is as the original electron device;
(2) test the test data that obtains the original electron device according to the original electron device of step (1) design, according to test data the original electron device is carried out model and extract, obtain the device model of original electron device;
(3) the original electron device to step (1) design adopts the different target integral dose to carry out irradiation respectively;
(4) obtain new test data to testing respectively through the original electron device of different target integral dose irradiation, extract carrying out model respectively according to new test data, obtain through the electron device model behind the target complete integral dose irradiation through the original electron device behind the irradiation;
(5) the electron device model through behind the target complete integral dose irradiation that obtains of the device model of the original electron device that is obtained by step (2) and step (4) is common constitutes the device model relevant with integral dose radiation, thereby finishes the device modeling process relevant with integral dose radiation.
2. a kind of device modeling method relevant with integral dose radiation according to claim 1 is characterized in that: described original electron device is a plurality of electron devices of identical type different size.
3. a kind of device modeling method relevant with integral dose radiation according to claim 1 is characterized in that: described original electron device is non-reinforcing device or reinforces device.
4. a kind of device modeling method relevant according to claim 1 with integral dose radiation, it is characterized in that: the different target integral dose irradiation in the described step (3) carries out carrying out under the dose rate of applied environment or be higher than under the dose rate of applied environment, need carry out annealing in process after carrying out irradiation under the dose rate of applied environment being higher than.
5. a kind of device modeling method relevant according to claim 4 with integral dose radiation, it is characterized in that: the described dose rate that is higher than applied environment is 100rad (Si)/s, carries out 168 hours 100 ℃ of The high temperature anneal after carrying out irradiation under this dose rate.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102214252A (en) * | 2010-04-09 | 2011-10-12 | 中国科学院微电子研究所 | Parameter extracting and modeling method for semiconductor device |
| CN102214251A (en) * | 2010-04-09 | 2011-10-12 | 中国科学院微电子研究所 | Method for extracting parameters and establishing models for total dose irradiation of semiconductor device |
| CN102375896B (en) * | 2010-08-12 | 2014-04-02 | 中国科学院微电子研究所 | Silicon-on-insulator N-channel metal oxide semiconductor (SOI NMOS) total dosage radiation model building method |
| CN102289546A (en) * | 2011-08-09 | 2011-12-21 | 中国科学院微电子研究所 | Method and equipment for simulating irradiation performance of circuit |
| CN103094144B (en) * | 2011-10-31 | 2015-11-25 | 无锡华润上华科技有限公司 | A kind of method of the threshold voltage for estimating metal-oxide-semiconductor |
| CN103617307B (en) * | 2013-10-23 | 2016-07-06 | 北京时代民芯科技有限公司 | A kind of reliability design approach of aerospace element total dose radiation bread board |
| CN105070669B (en) * | 2015-07-14 | 2018-01-05 | 西北核技术研究所 | The analysis method of logic gates and cmos digital circuit total dose effect sensitiveness |
| CN105022875B (en) * | 2015-07-14 | 2017-12-29 | 西北核技术研究所 | Consider the cmos circuit total dose effect emulation mode of Radiation bias voltage dynamic change |
| CN107305593B (en) * | 2016-04-21 | 2020-12-01 | 中国科学院上海微系统与信息技术研究所 | Modeling method of SOI MOSFET total dose irradiation model |
| CN106649920A (en) * | 2016-09-14 | 2017-05-10 | 西安电子科技大学 | IBIS-based integrated circuit total dose effect modeling method |
| CN106771953B (en) * | 2017-01-19 | 2019-10-18 | 深圳市量为科技有限公司 | The lossless screening technique of Schottky diode Radiation hardness and device |
| CN108346575A (en) * | 2018-02-09 | 2018-07-31 | 哈尔滨工业大学 | A method of inhibiting bipolar transistor ionization defect formation |
| CN108509729B (en) * | 2018-04-04 | 2021-12-14 | 中国工程物理研究院电子工程研究所 | Simulation method and system for post-irradiation characteristics of circuit of BJT device |
| CN111008506B (en) * | 2019-11-30 | 2023-04-07 | 中国科学院新疆理化技术研究所 | 6-T storage unit total dose resistance reinforcing method based on threshold voltage type matching |
| CN112214953B (en) * | 2020-10-20 | 2022-08-05 | 中国科学院新疆理化技术研究所 | Circuit-level total dose radiation effect simulation method |
| CN114518498B (en) * | 2021-12-28 | 2024-06-07 | 西北核技术研究所 | Space electronic system total dose effect test method based on end point alignment irradiation |
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