CN107480366A - A kind of method and system that leakage current temperature characterisitic is improved for model - Google Patents

A kind of method and system that leakage current temperature characterisitic is improved for model Download PDF

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Publication number
CN107480366A
CN107480366A CN201710677464.XA CN201710677464A CN107480366A CN 107480366 A CN107480366 A CN 107480366A CN 201710677464 A CN201710677464 A CN 201710677464A CN 107480366 A CN107480366 A CN 107480366A
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model
leakage current
sub
circuit
parameter
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CN107480366B (en
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张昊
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/36—Circuit design at the analogue level
    • G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods

Abstract

The invention discloses a kind of method and system that leakage current temperature characterisitic is improved for model, this method is by the way of sub-circuit is established, the empirical equation in model is changed in sub-circuit, temperature factor is added in empirical equation makes leakage current Ioff and the subthreshold amplitude of oscillation be coincide with measured value, by the present invention, cut-off current Ioff characteristics can be made more to be matched with traditional BSIM models.

Description

A kind of method and system that leakage current temperature characterisitic is improved for model
Technical field
The present invention relates to a kind of method and system for improving leakage current temperature characterisitic, and BSIM3 is directed to more particularly to one kind Model improves the method and system of leakage current temperature characterisitic.
Background technology
After overcoming device size to enter sub-micron, the difficulty of analytic expression model accurate, that operation efficiency is high, people are established Propose BSIM models, it adds substantial amounts of empirical equation and carrys out reduced equation, and the substrate of uneven doping have modified Threshold voltage, when considering influence of the vertical electric field to mobility, it is contemplated that the influence of underlayer voltage, establish weak inversion regime and The current formula in strong inversion area, and make their first derivative continuous.
Still some are poor for the simulation accuracy of short and narrow transistor for BSIM models, and are less than 0.8 μ to channel length M device, it there is also some unintelligible mistakes.The BSIM2 of BSIM series models equally has larger error.These are missed Difference shows, by showing the empirical equation as relation very little with physics to represent device property, to generate when simulating short channel device It is difficult.
Therefore, next Model B SIM3 of BSIM series models, while useful properties in retaining the first two model, It is returned in device operation principle.BSIM3 models to ditch grow 0.25 μm be operated in subthreshold value, the device in strong inversion area can carry For rational precision, but the calculating to output impedance still has larger error.Subsequent people are proposed BSIM3 again quickly Several versions, including third edition BSIM3V3, after be all quickly become industrial standard MOS transistor model, be most extensively should at present Spice models.
In the prior art, the cut-off current Ioff characteristics of some special MOS devices mismatch with conventional model, existing BSIM3 models can not describe the problem well.Fig. 1 be certain memory construction device compiling after read current characteristic, upper left, the right side Upper, lower-left is the comparison diagram of the measured value and model emulation value in -40 DEG C, 25 DEG C, 85 DEG C of 3 representative temperatures respectively, is emulated When device parameters be respectively breadth length ratio W/L=0.17/0.15, AD=3.67 × 10-13, PD=7.38 × 10-6, AS=1.3 × 10-13, PS=4.59 × 10-6, simulated conditions are bit line BL voltages Vds=0.85V, wordline WL voltage Vbs=1.8V, and the longitudinal axis is Read current Ids, unit ampere (A), transverse axis are that wordline selects voltage Vgs, unit V, and solid line is simulation value, and round dot setting-out is real Measured value.As seen from the figure, in gate source voltage Vgs during low temperature (- 40 DEG C)<Measured value is less than simulation value during 0.45V, and with voltage Reduce, gap is significantly expanded into scissors mouth, in gate source voltage Vgs during normal temperature (25 DEG C)<Measured value is less than simulation value during 0.45V, And as voltage reduces, gap somewhat expands into scissors mouth, and in gate source voltage Vgs during high temperature (85 DEG C)<Surveyed during 0.45V Value is higher than simulation value, and as voltage reduces, gap is significantly expanded into scissors mouth.
On the whole, cut-off current Ioff is raised and increased with temperature, but is found out by the actual measurement to the device and scanning, Cut-off current Ioff does not have linear change characteristic with the increase of temperature, as shown in Fig. 26 curves are successively from top to bottom Measured value when temperature is 150 DEG C, 125 DEG C, 85 DEG C, 25 DEG C, -40 DEG C, as temperature raises, subthreshold amplitude of oscillation significant change, leakage Electric current significantly raises, and existing model can not simulate this change.
The content of the invention
To overcome above-mentioned the shortcomings of the prior art, the purpose of the present invention is that providing a kind of improved for model leaks electricity The method and system of temperature characterisitic are flowed, so that cut-off current Ioff and the subthreshold amplitude of oscillation match with measured value, make cut-off current Ioff characteristics and traditional BSIM3 Model Matchings.
In view of the above and other objects, the present invention proposes a kind of method that leakage current temperature characterisitic is improved for model, should Method changes the empirical equation in model in sub-circuit, temperature is added in empirical equation by the way of sub-circuit is established The factor makes leakage current Ioff and the subthreshold amplitude of oscillation be coincide with measured value.
Further, this method includes：
Step 1, select subthreshold region relevant parameter in original model；
Step 2, at various temperatures, corresponding above-mentioned selected model parameter is extracted respectively；
Step 3, the characteristic for above-mentioned selected model parameter to temperature, matched curve is made, extract fitting formula；
Step 4, sub-circuit model is established, above-mentioned selected Estimating The Model Coefficients formula is write into according to model emulation language Sub-circuit；
Step 5, main circuit is established, the sub-circuit model is called in main circuit.
Further, the model is BSIM3 models.
Further, in step 1, the parameter of CIT, NFACTOR and NOFF as modification model is selected.
Further, in step 3, fitting formula is as follows：
Citt=4.76 × 10-7×pt2+3.85×10-5×pt+7.9×10-4
Nfactort=-0.0236 × pt+2.3672
Vofft=- (0.0039 × pt+0.4652)
Wherein, pt is temperature factor, and unit is DEG C.
To reach above-mentioned purpose, the present invention also provides a kind of system that leakage current temperature characterisitic is improved for model, and this is System using sub-circuit is established by the way of, in sub-circuit change model in empirical equation, in empirical equation addition temperature because Son makes leakage current Ioff and the subthreshold amplitude of oscillation be coincide with measured value.
Further, the system includes：
Parameter selection unit, for selecting subthreshold region relevant parameter in original model；
Parameter extraction unit, at various temperatures, extracting corresponding above-mentioned selected model parameter respectively；
Fitting formula extraction unit, the characteristic for above-mentioned selected model parameter to temperature make matched curve, and extraction is intended Close formula；
Sub-circuit model establishes unit, for establishing sub-circuit model, will above-mentioned selected Estimating The Model Coefficients formula according to Model emulation language writes into sub-circuit.
Main circuit establishes unit, and for establishing main circuit, the sub-circuit model is called in main circuit.
Further, the model is BSIM3 models.
Further, parameters of the parameter selection unit selection CIT, NFACTOR and NOFF as modification model.
Further, the fitting formula is as follows：
Citt=4.76 × 10-7×pt2+3.85×10-5×pt+7.9×10-4
Nfactort=-0.0236 × pt+2.3672
Vofft=- (0.0039 × pt+0.4652)
Wherein, pt is temperature factor, and unit is DEG C.
Compared with prior art, the present invention is a kind of improves the method and system of leakage current temperature characterisitic by building for model Vertical sub-circuit, changes the empirical equation in BSIM models in sub-circuit, and temperature factor is added in empirical equation makes leakage current Ioff and the subthreshold amplitude of oscillation are coincide with actual measurement, cut-off current Ioff characteristics is matched with traditional BSIM models.
Brief description of the drawings
Fig. 1 is the read current characteristic schematic diagram after certain memory program is translated in the prior art；
Fig. 2 is the leakage current amplitude of oscillation (swing) test result schematic diagram under different temperatures in the prior art；
Fig. 3 is a kind of step flow chart for the method that leakage current temperature characterisitic is improved for model of the present invention；
Fig. 4 is the simulation curve figure of each fitting formula in the specific embodiment of the invention；
Fig. 5 is the code schematic diagram of sub-circuit in the specific embodiment of the invention；
Fig. 6 is the code schematic diagram of main circuit in the specific embodiment of the invention；
Fig. 7 is the fitting effect schematic diagram of simulation result of the present invention；
Fig. 8 is a kind of system architecture diagram for the system that leakage current temperature characterisitic is improved for model of the present invention.
Embodiment
Below by way of specific instantiation and embodiments of the present invention are described with reference to the drawings, those skilled in the art can Understand the further advantage and effect of the present invention easily by content disclosed in the present specification.The present invention can also pass through other differences Instantiation implemented or applied, the various details in this specification also can be based on different viewpoints with application, without departing substantially from Various modifications and change are carried out under the spirit of the present invention.
Fig. 3 is a kind of step flow chart for the method that leakage current temperature characterisitic is improved for model of the present invention.The present invention one Kind is directed to the method for model raising leakage current temperature characterisitic by the way of sub-circuit is established, and is changed in sub-circuit in model Empirical equation, added in empirical equation temperature factor make leakage current Ioff and the subthreshold amplitude of oscillation (Sub-swing, subthreshold swing, The also known as S factors, this is an important parameters of the MOSFET in subthreshold operation, when being used as logic switch, and it is defined For：S=dVgs/d (log10Id), unit are [mV/dec].S is numerically equal to make drain current Id change a number Required grid voltage increment Delta Vgs during magnitude, paying attention to S is extracted at the greatest gradient on Vg-Id curves.Table Show the climbing of Id~Vgs relation curves) it is coincide with actual measurement, in present pre-ferred embodiments, the model is BSIM3 moulds Type, i.e. present invention corrected parameter formula on the basis of original BSIM3 models, model are for doing emulation fitting, in order to react The characteristic (IV, CV etc.) of practical devices.As shown in figure 3, a kind of method that leakage current temperature characterisitic is improved for model of the present invention, Comprise the following steps：
Step 301, subthreshold region relevant parameter in original model is selected, in the specific embodiment of the invention, selects CIT, Parameters of the NFACTOR and NOFF as modification model.
Step 302, at various temperatures, corresponding above three model parameter is extracted respectively；
Step 303, for the characteristic of above three parameters versus temperature, matched curve is made, extracts fitting formula.The fitting Formula is related to temperature.Fitting formula is as follows：
Citt=4.76 × 10-7×pt2+3.85×10-5×pt+7.9×10-4
Nfactort=-0.0236 × pt+2.3672
Vofft=- (0.0039 × pt+0.4652)
Wherein, pt is temperature factor, unit DEG C,
Citt, nfactor, voff are model parameters, the parameter related to Ioff.It is specific as follows：
Citt is interface trap electric capacity；
Nfactor is the subthreshold amplitude of oscillation factor；
Voff is subthreshold region offset voltage.
In present pre-ferred embodiments, the preferred values of the parameter is as shown in table 1 below：
Table 1
It should be noted that it is not unique to select three parameters, according to different device properties, the parameter of selection can increase It can subtract, but objective is included in protection scope of the present invention.
Step 304, sub-circuit model is established, above three Estimating The Model Coefficients formula is write into according to model emulation language Sub-circuit.
It should be noted that, model sub-circuit is the amendment to BSIM3 model formations, specifically for device creepage herein (Ioff) temperature characterisitic part.The amendment of this part without simulation of the BSIM models to other characteristics is changed, simply will originally certain Fixed parameters revision is the parameter related to temperature a bit.
Step 304 neutron breadboardin formula also can be different and different according to device property, but all without departing from this hair Bright protection domain.
Step 305, main circuit is established, the sub-circuit model is called in main circuit.
In the specific embodiment of the invention, the simulation curve of each fitting formula by emulational language rule as shown in figure 4, and built Vertical sub-circuit, as shown in Figure 5.Fig. 6 is then the code schematic diagram of main circuit in the specific embodiment of the invention.
Fig. 7 is the fitting effect schematic diagram of simulation result of the present invention.It can be seen that three representative temperatures (25 DEG C, -40 DEG C, 85 DEG C) under, simulation value coincide good with measured value.
It should be noted that, the device used in the present invention is an example, and all similar this Ioff temperature becomes herein Gesture can not can use the solution of the present invention with the situation of existing BSIM3 models fittings.
Resulting several parameter equations are special case in the present invention in the specific embodiment of the invention, and different devices is special Property, obtained formula can be different, and parameter is also not quite similar.Every model parameter related with Ioff fittings is likely to Participation is fitted again.
Fig. 8 is a kind of system architecture diagram for the system that leakage current temperature characterisitic is improved for model of the present invention.The present invention one Kind is directed to the system of model raising leakage current temperature characterisitic by the way of sub-circuit is established, and is changed in sub-circuit in model Empirical equation, in empirical equation adding temperature factor makes leakage current Ioff and the subthreshold amplitude of oscillation be coincide with actual measurement, the present invention compared with In good embodiment, the model is BSIM3 models.Specifically, the system that leakage current temperature characterisitic should be improved for model, including： Parameter selection unit 801, parameter extraction unit 802, fitting formula extraction unit 803, sub-circuit model establish unit 804 and Main circuit establishes unit 805.
Parameter selection unit 801, for selecting subthreshold region relevant parameter in original model, in the specific embodiment of the invention In, select the parameter of CIT, NFACTOR and NOFF as modification model；Parameter extraction unit 802, in each temperature Under, corresponding above three model parameter is extracted respectively；Fitting formula extraction unit 803, for above three parameters versus temperature Characteristic, make matched curve, extract fitting formula.The fitting formula is related to temperature.Fitting formula is as follows：
Citt=4.76 × 10-7×pt2+3.85×10-5×pt+7.9×10-4
Nfactort=-0.0236 × pt+2.3672
Vofft=- (0.0039 × pt+0.4652)
Wherein, pt is temperature factor, unit DEG C,
Citt, nfactor, voff are model parameters, the parameter related to Ioff.It is specific as follows：
Citt is interface trap electric capacity；
Nfactor is the subthreshold amplitude of oscillation factor；
Voff is subthreshold region offset voltage.
Sub-circuit model establishes unit 804, establishes sub-circuit model, by above three Estimating The Model Coefficients formula according to mould Type emulational language writes into sub-circuit.
It should be noted that, model sub-circuit is the amendment to BSIM3 model formations, specifically for device creepage herein (Ioff) temperature characterisitic part.The amendment of this part without simulation of the BSIM models to other characteristics is changed, simply will originally certain Fixed parameters revision is the parameter related to temperature a bit.
Main circuit establishes unit 805, and for establishing main circuit, the sub-circuit model is called in main circuit.
In summary, the present invention is a kind of improves the method and system of leakage current temperature characterisitic by establishing son electricity for model Road, in sub-circuit change BSIM3 models in empirical equation, in empirical equation add temperature factor make leakage current Ioff and The subthreshold amplitude of oscillation is coincide with actual measurement, cut-off current Ioff characteristics is matched with traditional BSIM3 models.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.Any Art personnel can be modified above-described embodiment and changed under the spirit and scope without prejudice to the present invention.Therefore, The scope of the present invention, should be as listed by claims.

Claims (10)

  1. A kind of 1. method that leakage current temperature characterisitic is improved for model, it is characterised in that：This method uses and establishes sub-circuit Mode, changes the empirical equation in model in sub-circuit, and temperature factor is added in empirical equation makes leakage current Ioff and Asia The threshold amplitude of oscillation is coincide with measured value.
  2. A kind of 2. method that leakage current temperature characterisitic is improved for model as claimed in claim 1, it is characterised in that this method Including：
    Step 1, select subthreshold region relevant parameter in original model；
    Step 2, at various temperatures, corresponding above-mentioned selected model parameter is extracted respectively；
    Step 3, the characteristic for above-mentioned selected model parameter to temperature, matched curve is made, extract fitting formula；
    Step 4, sub-circuit model is established, above-mentioned selected Estimating The Model Coefficients formula is write into sub- electricity according to model emulation language Road；
    Step 5, main circuit is established, the sub-circuit model is called in main circuit.
  3. A kind of 3. method that leakage current temperature characterisitic is improved for model as claimed in claim 2, it is characterised in that：The model For BSIM3 models.
  4. A kind of 4. method that leakage current temperature characterisitic is improved for BSIM3 models as claimed in claim 3, it is characterised in that： In step 1, the parameter of CIT, NFACTOR and NOFF as modification model is selected.
  5. A kind of 5. method that leakage current temperature characterisitic is improved for BSIM3 models as claimed in claim 4, it is characterised in that In step 3, fitting formula is as follows：
    Citt=4.76 × 10-7×pt2+3.85×10-5×pt+7.9×10-4
    Nfactort=-0.0236 × pt+2.3672
    Vofft=- (0.0039 × pt+0.4652)
    Wherein, pt is temperature factor, unit DEG C.
  6. A kind of 6. system that leakage current temperature characterisitic is improved for model, it is characterised in that：The system uses and establishes sub-circuit Mode, changes the empirical equation in model in sub-circuit, and temperature factor is added in empirical equation makes leakage current Ioff and Asia The threshold amplitude of oscillation is coincide with measured value.
  7. A kind of 7. system that leakage current temperature characterisitic is improved for model as claimed in claim 6, it is characterised in that the system Including：
    Parameter selection unit, for selecting subthreshold region relevant parameter in original model；
    Parameter extraction unit, at various temperatures, extracting model parameter selected by corresponding above three respectively；
    Fitting formula extraction unit, the characteristic for above-mentioned selected model parameter to temperature make matched curve, and extraction fitting is public Formula；
    Sub-circuit model establishes unit, for establishing sub-circuit model, by above-mentioned selected Estimating The Model Coefficients formula according to model Emulational language writes into sub-circuit
    Main circuit establishes unit, and for establishing main circuit, the sub-circuit model is called in main circuit.
  8. A kind of 8. system that leakage current temperature characterisitic is improved for model as claimed in claim 7, it is characterised in that：The model For BSIM3 models.
  9. A kind of 9. system that leakage current temperature characterisitic is improved for model as claimed in claim 8, it is characterised in that：The parameter Selecting unit selects the parameter of CIT, NFACTOR and NOFF as modification model.
  10. A kind of 10. system that leakage current temperature characterisitic is improved for BSIM models as claimed in claim 9, it is characterised in that The fitting formula is as follows：
    Citt=4.76 × 10-7×pt2+3.85×10-5×pt+7.9×10-4
    Nfactort=-0.0236 × pt+2.3672
    Vofft=- (0.0039 × pt+0.4652)
    Wherein, pt is temperature factor, and unit is DEG C.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108846171A (en) * 2018-05-28 2018-11-20 北京智芯微电子科技有限公司 Emulate the method for building up of the sub-circuit model of MOSFET temperature electrology characteristic
CN109117528A (en) * 2018-07-27 2019-01-01 上海华力微电子有限公司 MOS device sub-circuit temperature model and modeling method based on BSIM4 model

Citations (1)

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Publication number Priority date Publication date Assignee Title
CN102799697A (en) * 2011-05-24 2012-11-28 中国科学院上海技术物理研究所 Low-temperature CMOS (Complementary Metal-Oxide-Semiconductor Transistor) modeling method

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余云娟: "《基于BSIM3的0.5μm工艺CMOS器件建模及纳米级RF器件STI应力的研究》", 《中国优秀硕士学位论文全文数据库 信息科技辑》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108846171A (en) * 2018-05-28 2018-11-20 北京智芯微电子科技有限公司 Emulate the method for building up of the sub-circuit model of MOSFET temperature electrology characteristic
CN108846171B (en) * 2018-05-28 2021-06-29 北京智芯微电子科技有限公司 Method for establishing sub-circuit model for simulating MOSFET temperature electrical characteristics
CN109117528A (en) * 2018-07-27 2019-01-01 上海华力微电子有限公司 MOS device sub-circuit temperature model and modeling method based on BSIM4 model
CN109117528B (en) * 2018-07-27 2023-06-13 上海华力微电子有限公司 MOS device subcircuit temperature model based on BSIM4 model and modeling method

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