CN106991201B - Method for determining total dose model parameters of SOI MOSFET - Google Patents
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Abstract
The invention provides a method for determining parameters of a total dose model of an SOI MOSFET (silicon on insulator MOSFET), which comprises the following steps of: s1: acquiring transfer characteristic data and transmission characteristic data of the SOI MOSFET under the irradiation of different doses in two working states of on and off; s2: screening the data obtained in the step S1, and importing the test data into parameter extraction software; s3: extracting equivalent transistor parameters of the upper edge angle and equivalent transistor parameters of the field oxide side wall; s4: exporting a total dose intensive model card file; s5: and importing the total dose model of each single point into the parameter extraction software to generate a total dose Bin model card file of the whole region. The method adopts a mode of separating from the main transistor to extract parameters, refines the sensitive parameters of each region in the physical model, improves the accuracy of parameter fitting, can accurately fit out hump effect generated in a sub-threshold region when the SOI MOSFET is influenced by total dose radiation effect, and can simulate the total dose effect of a full-region size device because the model exists in the form of a Bin model card.
Description
Technical Field
The invention belongs to the technical field of extraction of intensive model parameters of devices, and particularly relates to a method for determining parameters of a total dose model of an SOI MOSFET.
Background
With the continuous development of space technology, electronic products used in the information society are more and more widely applied to space exploration and space navigation. Various rays existing in the outer space can cause irreversible damage to electronic products, so that space instruments are out of order. SOI (Silicon-On-Insulator) is a Silicon-On-Insulator technology, which well reduces the radiation effects of single event upset, single event latch-up and the like caused by geospatial particles to a circuit, but because a large number of Silicon and Silicon dioxide interfaces (shallow trench isolation field oxygen and buried oxygen) still exist, the radiation particles generate a large amount of redundant charges On the interfaces, and further an electronic device cannot work in a normal working area. Thus, radiation process and design hardening of SOI device based circuits is essential.
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) intensive model is a model which describes the physical Effect of the MOSFET device as a mathematical equation and can be used for large-scale EDA simulation of a circuit through parameter extraction. The SOI MOSFET compact model is one type of compact model that can be used to simulate SOI devices. The intensive model with high precision and high speed can reduce the difference between the design and the finished product of the tape-out of a circuit designer, greatly improve the design accuracy and shorten the development period.
The SOI MOSFET total dose intensive model is a model which can reflect the influence of the total dose in the SOI MOSFET and can accurately reflect the change of the circuit electrical characteristics through simulation. The model can provide a feasible and reliable radiation hardening circuit design scheme for a circuit designer, reduce the radiation testing times, and greatly shorten the design period and the research and development capital investment.
The existing SOI MOSFET total dose intensive model is a macro model established based on the basic idea of adding sub-circuits at the periphery of a main transistor. And the macro model is established by parameter extraction to obtain the intensive model of the corresponding process, which can be used for simulation. The method comprises two parts of device irradiation test data acquisition and parameter extraction. The existing SOI MOSFET total dose intensive model has the problem of complex parameter extraction process.
Disclosure of Invention
In view of the above drawbacks of the prior art, the present invention provides a method for determining parameters of a SOI MOSFET total dose model, which is used to solve the problems of complicated process and low accuracy of extracting parameters of the SOI MOSFET total dose intensive model in the prior art.
To achieve the above and other related objects, the present invention provides a method for determining parameters of a SOI MOSFET total dose model, comprising the steps of:
s1: acquiring transfer characteristic data and transmission characteristic data of the SOI MOSFET under the irradiation of different doses in two working states of on and off;
s2: screening the data obtained in the step S1, and importing the test data into parameter extraction software;
s3: extracting equivalent transistor parameters of the upper edge angle and equivalent transistor parameters of the field oxide side wall;
s4: exporting a total dose intensive model card file;
s5: and importing the total dose model of each single point into the parameter extraction software to generate a total dose Bin model card file of the whole region.
Optionally, in the step S1, the MOSFET is a PMOS or an NMOS.
Optionally, in the step S1, an irradiation test is performed by using a cobalt 60 irradiation source.
Optionally, in the step S1, the radiation dose is in the range of 0-1000 k rad/SiO2。
Optionally, in step S1, at least two radiation doses are used for the irradiation test.
Optionally, in step S1, in the on-state, the voltage applied to each port is V _ drain ═ V _ source ═ V _ body ═ V _ substrate ═ 0V, and V _ gate ═ VDD, and in the off-state, the voltage applied to each port is V _ drain ═ V _ source ═ V _ body ═ V _ substrate ═ V _ gate ═ 0V, where V _ drain is the drain voltage, V _ source is the source voltage, V _ body is the bulk voltage, V _ substrate is the substrate voltage, V _ gate is the gate voltage, and VDD is the operating voltage.
Optionally, in the step S2, the data obtained in the screening step S1 includes the following steps: and calculating the threshold voltage of each dose point of each group of test data, and selecting the group of data if the threshold voltage change of the group of data is monotonously reduced along with the increase of the dose.
Optionally, in step S2, the parameter extraction software is tidbit.
Optionally, in the step S2, a step of setting process parameters, geometric parameters and type parameters of the device is further included.
Optionally, the method further comprises the step of simulating the transfer characteristic of the device before irradiation, correcting the sub-threshold slope parameter in the process parameters according to the obtained sub-threshold slope value, and re-simulating the background current after correction.
Optionally, in the step S3, the method further includes adjusting the top corner equivalent transistor parameter and the field oxide sidewall equivalent transistor parameter to correct the fitting details of the curve.
Optionally, in the step S3, the upper corner equivalent transistor parameters include one or more of an upper corner gate oxide thickness, an upper corner threshold voltage offset, an upper corner mobility, an upper corner dose saturation factor, an upper corner saturation velocity, and an upper corner width; the field oxygen sidewall equivalent transistor parameters comprise one or more of field oxygen sidewall gate oxide thickness, field oxygen sidewall threshold voltage deviation, field oxygen sidewall mobility, field oxygen sidewall dose saturation factor, field oxygen sidewall saturation velocity, field oxygen sidewall width and weak inversion coefficient.
Optionally, in the step S4, single-point models of at least four different sizes of SOI MOSFETs are derived.
Optionally, step S6 is further included, where the total dose physics model description file, the circuit netlist file, and the total dose Bin model card file are used to perform device transfer characteristic simulation.
Optionally, in the step S6, a variation curve of the drain current of the SOI MOSFET with the front gate voltage under different dose irradiation is simulated.
As described above, the method for determining SOI MOSFET total dose model parameters according to the present invention has the following advantageous effects: (1) compared with the traditional parameter extraction method, the method adopts a mode of separating the main transistor from the main transistor to extract parameters (the parameter extraction of the main transistor can adopt an industrial standard process to extract the parameters, the parameter extraction of a total dose model does not influence the model parameters of the main transistor, and the two are independent), thereby refining the sensitive parameters of each region in the physical model and improving the accuracy of parameter fitting; (2) the invention can accurately fit the hump effect generated in the subthreshold region when the SOI MOSFET is influenced by the total dose radiation effect; (3) the model exists in the form of a Bin model card and can simulate the total dose effect of a full-area-size device (namely, a device with each size).
Drawings
FIG. 1 is a flow chart of a method for determining parameters of a SOI MOSFET total dose model according to the present invention.
Figure 2 is a graph showing parameter tuning and curve fitting for the shallow trench isolation gate oxide region.
FIG. 3 is a graph showing parameter adjustment and curve fitting in the upper corner region.
Fig. 4 shows the results of device transfer characteristic simulation compared with the test results.
Description of the element reference numerals
S1-S5
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 4. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
As shown in fig. 1, there is shown a flow chart of the SOI MOSFET total dose model parameter determination method of the present invention, comprising the steps of:
step S1: and acquiring transfer characteristic data and transmission characteristic data of the SOI MOSFET under two working states of opening and closing under irradiation of different doses.
Specifically, the MOSFET is a PMOS or an NMOS. The transfer characteristic data comprises a relation between front gate voltage and source-drain current, and the transmission characteristic data comprises a relation between source-drain voltage and source-drain current.
Specifically, at least four sizes of MOSFETs may be selected for testing. The dimension parameters include width W and length L, wherein width W refers to the length of the gate perpendicular to the channel direction, and length L refers to the channel length.
In the step, SOI MOSFETs with various sizes are selected for testing, and a total dose model of the whole region can be obtained. For MOSFET with each size, at least two radiation doses are adopted for carrying out radiation test, and the radiation dose range is 0-1000 krad/SiO2The radiation energy received per unit mass is referred to herein as the dose, usually rads or Gray as the unit of measure, and the relationship between 1rad 100erg/g 6.24 × 1013eV/g and 1Gray 1J/kg 100rad to the other commonly used energy units is that the radiation dose received is related to the atomic density of the material itself at a constant radiation intensity, and the dose received is higher, lower or lower for higher density, for example, for lower density microelectronic materials, the relationship between the dose is 1rad/Si 0.58rad/SiO20.94 rad/GaAs. The sum of the radiation doses received by the whole material or device is called the total dose (TID). In this example, the total radiation dose received by the device is in rad/SiO2Is a unit.
Step S2: the data obtained in step S1 is screened, and test data is imported into the parameter extraction software.
Specifically, the data obtained in the screening step S1 includes the following steps:
1) calculating the threshold voltage of each dose point of each group of test data by adopting an industry universal method;
2) the set of data is selected if the threshold voltage variation of the set of data monotonically decreases with increasing dose.
The parameter extraction software includes, but is not limited to, software such as TIDFit. Wherein TIDFit is parameter extraction software developed specifically for SOIMOSFET total dose modeling.
In this step, the method further comprises the step of setting the process parameters, the geometric parameters and the type parameters of the device.
Further, the method also comprises the step of simulating the transfer characteristic of the device before irradiation, correcting the sub-threshold slope parameter in the process parameters according to the obtained sub-threshold slope value, and re-simulating the background current after correction.
Step S3: and extracting the equivalent transistor parameters of the upper edge angle and the equivalent transistor parameters of the field oxide side wall.
Specifically, the upper corner equivalent transistor parameters include one or more of upper corner gate oxide thickness, upper corner threshold voltage offset, upper corner mobility, upper corner dose saturation factor, upper corner saturation velocity and upper corner width; the field oxygen sidewall equivalent transistor parameters comprise one or more of field oxygen sidewall gate oxide thickness, field oxygen sidewall threshold voltage deviation, field oxygen sidewall mobility, field oxygen sidewall dose saturation factor, field oxygen sidewall saturation velocity, field oxygen sidewall width and weak inversion coefficient.
Step S4: and exporting a total dose intensive model card file.
Specifically, single-point models of SOI MOSFETs of different sizes are derived, respectively. Here, the single-point model refers to a model corresponding to a single size.
Step S5: and importing the total dose model of each single point into the parameter extraction software to generate a total dose Bin model card file of the whole region.
Specifically, the Bin model card is obtained by using a Bin model generation method in an industrial standard model BSIM 3.3.
The invention solves the current situation that the existing total dose model has a complicated parameter extraction process, provides a simplified parameter extraction process and ensures the accuracy of the model. The model exists in the form of a Bin model card and can simulate the total dose effect of a full-area-size device.
Further, the method for determining SOI MOSFET total dose model parameters of the present invention further includes step S6: and performing device transfer characteristic simulation by adopting a total dose physical model description file, a circuit netlist file and the total dose Bin model card file.
Specifically, the leakage current I of the SOI MOSFET under different dose irradiation is simulatedDrainFront gate voltage VFrontGateThe change curve of (2). The total dosage physical model description file is expressed by verilog-A language and is written according to the physical model, the file does not need to be modified in the whole parameter extraction process, the file is a given file and is irrelevant to parameter extraction, and the file is needed for circuit simulation after the parameter extraction is finished finally. The circuit netlist file is a file written by a circuit designer, the file is written by SPICE language and contains all information of a circuit to be simulated, the file is irrelevant to parameter extraction, but the circuit simulation needs to be used.
By way of example, taking 1.2V NMOS in 0.13 micron SOI CMOS process as an example, the total dose model parameter extraction of the SOI MOSFET is performed, which includes the following steps:
1) selecting NMOS devices with four sizes of width-to-length ratios (W/L) of 10/10, 10/0.13, 0.15/10 and 0.15/0.13 (units are microns) for packaging, and leading out six ends of Drain (Drain electrode), Gate (Gate electrode), Source electrode, Body (Body region) and Substrate (Substrate) by gold wires.
In this embodiment, NMOS devices of four sizes are selected for testing, and in other embodiments, devices of more sizes may be selected for testing as needed.
2) The irradiation test was performed using a cobalt 60 irradiation source, and all devices were biased using both ON and OFF test states. In the ON bias, each port voltage is V _ source ═ V _ body ═ V _ substrate ═ 0V, and V _ gate ═ 1.2V (operating voltage), in the OFF bias, each port voltage is V _ source ═ V _ body ═ V _ substrate ═ V _ gate ═ 0V, and the irradiation time is determined according to different dose rates, and the total radiation dose received by the device is guaranteed to be 100k, 400k, 700k, and 1000k (the unit is rad/SiO-2)。
3) And taking off the device irradiated to the designated dose, and measuring two sets of data of transfer characteristics and transmission characteristics of the device by using a semiconductor parameter tester. The transfer characteristic data comprises a relation between front gate voltage and source-drain current, and the transmission characteristic data comprises a relation between source-drain voltage and source-drain current.
4) Repeating steps 2) -3) for the next dose pointData until total dose reaches 1000k rad/SiO2。
5) And importing the screened data into parameter extraction software TIDFit. Then setting technological parameters, geometrical parameters and type parameters of the device, wherein the technological parameters of the device comprise one or more of parameters such as a bulk factor switch (isgamma), a main transistor gate oxide thickness (toxref), a sub-threshold slope (ss), a body region doping concentration (Nsub), an effective source-drain voltage parameter (delta) and the like; the geometric parameters comprise the length (W) of the gate perpendicular to the channel direction and the length (L) of the channel; the type parameter includes an operating Voltage (VDD).
6) Simulating the transfer characteristics (relation between front gate voltage and source-drain current) of the device without irradiation, correcting the ss parameter according to the obtained subthreshold slope value, and re-simulating the background current after correction.
7) The field oxygen side wall equivalent transistor parameters are adjusted to enable a curve (a curve of current variation with voltage in a field oxygen side wall area) to be well fitted to test data of the field oxygen side wall area (a shallow trench isolation gate oxygen area). As examples, the field oxide sidewall equivalent transistor parameters include field oxide sidewall gate oxide thickness (toxst 2), field oxide sidewall threshold voltage (vth0sti2), field oxide sidewall threshold voltage shift (voffsi 2), field oxide sidewall mobility (usti2), field oxide sidewall dose saturation factor (taosti2), field oxide sidewall saturation velocity (satst 2), field oxide sidewall width (wsti2), and weak inversion coefficient (MINV).
As shown in fig. 2, a graph of parameter adjustment and curve fitting for the field oxygen sidewall area is shown, wherein the ordinate is logarithmic current (a), the abscissa is voltage (V), the solid points represent test data, and the solid lines represent the fitted curve. The parameters of the field oxide sidewall region affect the off-state leakage current of the device.
8) And adjusting parameters of the equivalent transistor at the upper corner to enable a curve (a curve of the current of the upper corner region along with the voltage) to be well fitted to the test data of the upper corner region. As examples, the upper corner equivalent transistor parameters include upper corner gate oxide thickness (toxst 1), upper corner threshold voltage (vth0sti1), upper corner threshold voltage shift (voffsi 1), upper corner mobility (usti1), upper corner dose saturation factor (taosti1), upper corner saturation velocity (satst 1), and upper corner width (wsti 1).
As shown in fig. 3, the parameter adjustment and curve fitting graph is shown in the upper corner region, where the solid dots represent the test data and the solid lines represent the fitting curve. Here, the upper corner region refers to the corner where the main transistor and the field oxide sidewall region border, and the parameters of this region affect the hump effect. The hump effect means that after the MOSFET is irradiated, besides the increase of off-state leakage current, a bulge also occurs in a sub-threshold region, and the existing total dose model cannot express the effect and only can express the increase of the off-state leakage current.
9) Repeating the steps 7) -8) to correct the fitting details of the curve.
It is noted that in repeating steps 7) -8), it is not necessary that the entire curve fits well, as long as the final superimposed total current fits the test result. Wherein, the step 7) adjusts the current of the side wall area, the step 8) is the edge area, when adjusting the current of the two areas respectively, the accuracy of the current coincidence of one area is improved, but the accuracy is reduced after adding the current of the other area, so the operations 7) -8) are repeated to improve the accuracy of the total current, thereby determining the following parameters: (1) the upper corner equivalent transistor parameters comprise one or more of upper corner gate oxide thickness, upper corner threshold voltage offset, upper corner mobility, upper corner dose saturation factor, upper corner saturation velocity, upper corner width and other parameters; (2) field oxide sidewall equivalent transistor parameters: the method comprises one or more of the parameters of field oxide side wall gate oxide thickness, field oxide side wall threshold voltage deviation, field oxide side wall mobility, field oxide side wall dosage saturation factor, field oxide side wall saturation velocity, field oxide side wall width, weak inversion coefficient and the like.
10) And exporting the single-point models (total dose intensive model card files) of the SOI MOSFETs with the sizes obtained through the steps, and importing software to generate total dose Bin model card files of the whole area. Each single-point model only corresponds to one size, and the full-area total dose Bin model can cover devices of all sizes and can simulate the total dose effect of the full-area devices.
11) And calling the total dose model card Bin file generated through the steps, the existing total dose physical model description file and the circuit netlist file to perform device transfer characteristic simulation.
As an example, fig. 4 shows the results of the device transfer characteristic simulation results (solid line) and the test results (solid dot) with the size W/L of 0.15/0.13. Therefore, the method for determining the parameters of the SOI MOSFET total dose model has high parameter fitting accuracy. Meanwhile, as can be seen from the region of-0.2V to 0.1V in FIG. 4, the invention can accurately fit the hump effect generated in the sub-threshold region when the SOI MOSFET is affected by the total dose radiation effect.
In conclusion, the method for determining the parameters of the SOI MOSFET total dose model adopts a mode of separating from the main transistor to extract the parameters, so that the sensitive parameters of each region in the physical model are refined, and the accuracy of parameter fitting is improved; the invention can accurately fit the hump effect generated in the subthreshold region when the SOI MOSFET is influenced by the total dose radiation effect; in the invention, the model exists in the form of a Bin model card, and can simulate the total dose effect of a device with the whole area size. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (14)
1. A method for determining total dose model parameters of SOIMOSFET is characterized by comprising the following steps:
s1: acquiring transfer characteristic data and transmission characteristic data of an SOI MOSFET under and under two working states of different doses of irradiation, wherein in the on working state, the voltage applied to each port is V _ drain-V _ source-V _ body-V _ substrate-0V and V _ gate-VDD, in the off working state, the voltage applied to each port is V _ drain-V _ source-V _ body-V _ substrate-V _ gate-0V, wherein V _ drain is a drain voltage, V _ source is a source voltage, V _ body is a bulk voltage, V _ substrate is a substrate voltage, V _ gate is a gate voltage and VDD is a working voltage;
s2: screening the data obtained in the step S1, and importing the test data into parameter extraction software;
s3: extracting equivalent transistor parameters of the upper edge angle and equivalent transistor parameters of the field oxide side wall;
s4: exporting a total dose intensive model card file;
s5: and importing the total dose model of each single point into the parameter extraction software to generate a total dose Bin model card file of the whole region.
2. The SOI MOSFET total dose model parameter determination method of claim 1, characterized by: in step S1, the MOSFET is PMOS or NMOS.
3. The SOI MOSFET total dose model parameter determination method of claim 1, characterized by: in step S1, an irradiation test is performed using a cobalt 60 irradiation source.
4. The SOI MOSFET total dose model parameter determination method of claim 1, characterized by: in the step S1, the radiation dose is in the range of 0-1000 k rad/SiO2。
5. The SOI MOSFET total dose model parameter determination method of claim 1, characterized by: in step S1, at least two radiation doses are used for the irradiation test.
6. The SOI MOSFET total dose model parameter determination method of claim 1, characterized by: in step S2, the data obtained in the screening step S1 includes the following steps: and calculating the threshold voltage of each dose point of each group of test data, and selecting the group of data if the threshold voltage change of the group of data is monotonously reduced along with the increase of the dose.
7. The SOI MOSFET total dose model parameter determination method of claim 1, characterized by: in step S2, the parameter extraction software is tidbit.
8. The SOI MOSFET total dose model parameter determination method of claim 1, characterized by: in step S2, a step of setting process parameters, geometric parameters and type parameters of the device is further included.
9. The SOIMOSFET total dose model parameter determination method of claim 8, wherein: the method also comprises the steps of simulating the transfer characteristics of the device before irradiation, correcting the sub-threshold slope parameter in the process parameters according to the obtained sub-threshold slope value, and re-simulating the background current after correction.
10. The method for determining total SOIMOSFET dose model parameters of claim 1, wherein: in step S3, the method further includes adjusting the top corner equivalent transistor parameter and the field oxide sidewall equivalent transistor parameter to correct the fitting details of the curve.
11. The method for determining total SOIMOSFET dose model parameters of claim 1, wherein: in step S3, the upper corner equivalent transistor parameters include one or more of an upper corner gate oxide thickness, an upper corner threshold voltage offset, an upper corner mobility, an upper corner dose saturation factor, an upper corner saturation velocity, and an upper corner width; the field oxygen sidewall equivalent transistor parameters comprise one or more of field oxygen sidewall gate oxide thickness, field oxygen sidewall threshold voltage deviation, field oxygen sidewall mobility, field oxygen sidewall dose saturation factor, field oxygen sidewall saturation velocity, field oxygen sidewall width and weak inversion coefficient.
12. The method for determining total SOIMOSFET dose model parameters of claim 1, wherein: in step S4, a single-point model of at least four soi mosfets of different sizes is derived, where the single-point model is a model corresponding to a single size.
13. The method for determining total SOIMOSFET dose model parameters of claim 1, wherein: and step S6, performing device transfer characteristic simulation by using the total dose physical model description file, the circuit netlist file and the total dose Bin model card file.
14. The SOI MOSFET total dose model parameter determination method of claim 13, wherein: in step S6, a variation curve of the drain current of the soi mosfet with the front gate voltage under different dose irradiation is simulated.
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| CN106991201B (en) * | 2016-01-20 | 2020-08-28 | 中国科学院上海微系统与信息技术研究所 | Method for determining total dose model parameters of SOI MOSFET |
| CN108388721B (en) * | 2018-02-08 | 2021-09-14 | 中国科学院上海微系统与信息技术研究所 | SOI NMOS total dose radiation multi-bias point current model modeling method |
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