CN112214952A - Circuit simulation method for coupling total dose effect and process fluctuation - Google Patents

Circuit simulation method for coupling total dose effect and process fluctuation Download PDF

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CN112214952A
CN112214952A CN202011125363.XA CN202011125363A CN112214952A CN 112214952 A CN112214952 A CN 112214952A CN 202011125363 A CN202011125363 A CN 202011125363A CN 112214952 A CN112214952 A CN 112214952A
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total dose
transistor
nch
transistors
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郑齐文
崔江维
李小龙
魏莹
余学峰
李豫东
郭�旗
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Xinjiang Technical Institute of Physics and Chemistry of CAS
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Abstract

The invention relates to a circuit simulation method for coupling total dose effect and process fluctuation, which comprises the steps of determining total dose effect associated process parameters, performing a transistor total dose irradiation test, extracting electrical parameter degradation equation parameters of a transistor, generating total dose effect models of transistors at different process angles and simulating circuits at different process angles. The theoretical basis of the method is that the total dose radiation damage of the crystal is related to the process fluctuation parameters, and the total dose radiation effect and the process fluctuation have a coupling effect. The method has the advantages that the total dose effect and process fluctuation coupling are considered, and the characteristics of the integrated circuit working in the radiation environment are accurately simulated.

Description

Circuit simulation method for coupling total dose effect and process fluctuation
Technical Field
The invention belongs to the technical field of anti-radiation integrated circuit design, and particularly relates to a circuit simulation method for coupling total dose effect and process fluctuation.
Background
The integrated circuit has process fluctuation in the production process, and the process parameters such as doping concentration, oxide thickness, diffusion depth and the like have fluctuation in different wafers and different positions of the same wafer. The process parameter fluctuation causes the device electrical parameter fluctuation, such as threshold voltage, carrier mobility and the like, and influences the performance of the integrated circuit. In order to analyze the influence of process fluctuation on the circuit performance, simulation of a plurality of process corners (FF, SF, SS, FS, TT) is set in circuit simulation, and circuit characteristic parameters are required to simultaneously meet design requirements under the plurality of process corners.
An integrated circuit working in a radiation environment is affected by high-energy particles to generate radiation damage, and the reliability of the integrated circuit is affected. The total dose radiation effect is one of important radiation damage effects, and is permanent accumulated damage generated by ionization of protons and electrons, which determines the longest service life of the device in space and is an important problem faced by high-orbit and long-life satellites. The total dose radiation effect generates oxide trap charges and interface trap charges in the integrated circuit oxide, so that the power consumption current of the integrated circuit is increased, the working frequency is reduced, and even the function is invalid.
The total dose effect is also closely related to the process parameters such as doping concentration, oxide thickness and the like, the fluctuation of the electrical parameters of the device caused by the fluctuation of the process parameters is further aggravated, and the total dose effect and the process fluctuation have a coupling effect, so that a simulation module for coupling the total dose effect and the process fluctuation needs to be researched. The total dose radiation makes the device electrical parameter drift (threshold voltage drift, etc.), and the difference of the device process parameters for different technologies causes the drift amount of the electrical parameter to be different, thereby further broadening the statistical distribution of the device electrical parameter fluctuation, and the statistical distribution broadening effect of the device electrical parameter is difficult to cover by respectively carrying out the total dose effect and the process fluctuation simulation.
The invention provides a circuit simulation method for coupling total dose effect and process fluctuation, which realizes the co-simulation of the influence of the total dose effect and the process fluctuation on the circuit characteristics and accurately simulates the characteristics of an integrated circuit working in a radiation environment.
Disclosure of Invention
The invention aims to provide a circuit simulation method for coupling total dose effect and process fluctuation, which comprises the steps of determining total dose effect associated process parameters, performing a transistor total dose irradiation test, extracting electrical parameter degradation equation parameters of transistors, generating total dose effect models of transistors at different process angles and simulating circuits at different process angles. The theoretical basis of the method is that the total dose radiation damage of the crystal is related to the process fluctuation parameters, and the total dose radiation effect and the process fluctuation have a coupling effect. The method has the advantages that the total dose effect and process fluctuation coupling are considered, and the characteristics of the integrated circuit working in the radiation environment are accurately simulated.
The invention relates to a circuit simulation method for coupling total dose effect and process fluctuation, which comprises the following steps:
determining the total dose effect related process parameters:
a. determining the doping concentration of a transistor channel as a total dose effect related process parameter;
transistor total dose irradiation test:
b. selecting 6-36 transistors with the same layout structure and threshold voltage type, testing transfer characteristic curves and output characteristic curves of the transistors, then carrying out total dose irradiation tests with the same dose rate and irradiation bias conditions on all the transistors, and testing the transfer characteristic curves and the output characteristic curves of the transistors after irradiation;
extracting parameters of a transistor electrical parameter degradation equation:
c. the transistor electrical Parameter degradation equation is Δ Parameter ═ f (D, Nch), where Δ Parameter represents the transistor electrical Parameter drift amount caused by total dose radiation, D is the irradiation dose, Nch is the channel doping concentration, the expression of the function f (D, Nch) is related to the specific transistor electrical Parameter and the corresponding radiation damage mechanism, the function f (D, Nch) contains fitting parameters, it is necessary to extract according to the test data, extract the transistor threshold voltage according to the test result of the transistor transfer characteristic curve before irradiation, and further calculate the transistor channel doping concentration, and the specific calculation formula is:
Figure BDA0002733439330000021
in the formula VthIs a threshold voltage, VFBIn order to be at a flat-band voltage,
Figure BDA0002733439330000022
is the potential difference between the intrinsic fermi level and the fermi level, epsilonsiPermittivity of a silicon material, CoxQ is the amount of electron charge for oxide capacitance. The transistor threshold voltages with the same layout structure and threshold voltage type are different due to process fluctuation, further the channel doping concentration is different, according to the test results of the transistor transfer characteristic curve and the output characteristic curve after the radiation dose D, the electrical Parameter degradation delta Parameter of different transistors is extracted, and the data of the delta Parameter changing along with Nch are obtained. Extracting fitting parameters in the function f (D, Nch) according to the data of the change of the delta Parameter along with the Nch;
generating total dose effect models of transistors at different process angles:
d. calling a process manufacturer to provide a device SPICE model, carrying out FF, SF, SS, FS and TT process angle transfer characteristic curve simulation on the transistor in the step c, extracting transistor threshold voltage, calculating Nch of transistors in different process angles according to threshold voltage values, wherein a calculation formula is consistent with the step c, updating a calculation value of the Nch to a function f (D, Nch), adding a transistor electrical parameter degradation equation to the process manufacturer to provide the device SPICE model, and generating the transistor total dose effect SPICE model in different process angles;
circuit simulation of different process corners:
e. and d, taking the total dose effect models of different process angles generated in the step d as SPICE models, respectively carrying out direct current, transient state, noise and stability simulation on the circuit to be researched, and outputting a simulation result.
Compared with the prior art, the circuit simulation method for coupling the total dose effect and the process fluctuation has the advantages that:
first, the influence of the coupling of the total dose radiation effect and the process fluctuation on the integrated circuit characteristics is considered.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
FIG. 1 is a flow chart of the present invention;
FIG. 2 shows the Nch extraction result of the 130nm SOI process IO NMOSFET of the present invention;
FIG. 3 shows the result of parameter extraction by the equation fitting of the electrical parameter degradation of the IO NMOSFET in the 130nm SOI process.
Detailed Description
The invention is described in detail below by way of example with reference to the accompanying drawings.
Examples
The invention relates to a circuit simulation method for coupling total dose effect and process fluctuation, which specifically operates according to the steps listed in figure 1:
determining the total dose effect related process parameters:
a. determining the doping concentration (Nch) of a transistor channel as a total dose effect related process parameter;
transistor total dose irradiation test:
b. selecting 6-36 transistors with the same layout structure and threshold voltage type, testing transfer characteristic curves and output characteristic curves of the transistors, then performing a total dose irradiation test with the same dose rate and irradiation bias conditions on all the transistors, and testing the transfer characteristic curves and the output characteristic curves of the transistors after irradiation;
extracting parameters of a transistor electrical parameter degradation equation:
c. the electrical Parameter degradation equation of the transistor is as follows, where Δ Parameter represents the drift amount of the electrical Parameter of the transistor caused by total dose radiation, D is the radiation dose, Nch is the channel doping concentration, the expression of the function f (D, Nch) is related to the electrical Parameter of the transistor and the corresponding radiation damage mechanism, the function f (D, Nch) contains fitting parameters, it is necessary to extract according to the test data, extract the threshold voltage of the transistor according to the test result of the transfer characteristic curve of the transistor before radiation, and further calculate the channel doping concentration of the transistor, and the specific calculation formula is as follows:
Figure BDA0002733439330000031
in the formula VthIs a threshold voltage, VFBIn order to be at a flat-band voltage,
Figure BDA0002733439330000032
is the potential difference between the intrinsic fermi level and the fermi level, epsilonsiPermittivity of a silicon material, CoxQ is the amount of electron charge for oxide capacitance. The transistor threshold voltage with the same layout structure and threshold voltage type is different due to process fluctuation, and further the channel doping concentration is different. Extracting different transistor electrical Parameter degradation delta Parameter according to the test results of the transistor transfer characteristic curve and the output characteristic curve after the radiation dose D, obtaining data of the delta Parameter changing along with the Nch, and extracting fitting parameters in the function f (D, Nch) according to the data of the delta Parameter changing along with the Nch;
fig. 2 shows the result of the Nch extraction of the 130nm SOI process IO NMOSFET, the total dose irradiation causes the increase of the off-state leakage current (I _ off) of the 130nm process IO NMOSFET, and Δ Ioff (f (D, Nch) ═ a-b Nch, where a and b are the fitting parameters; FIG. 3 shows the results of parameter extraction by the electrical parameter degradation equation of the IO NMOSFET in the 130nm SOI process;
generating total dose effect models of transistors at different process angles:
d. calling a process manufacturer to provide a device SPICE model, carrying out FF, SF, SS, FS and TT process angle transfer characteristic curve simulation on the transistor in the step c, extracting transistor threshold voltage, calculating Nch of transistors in different process angles according to threshold voltage values, wherein a calculation formula is consistent with the step c, updating a calculation value of the Nch to a function f (D, Nch), adding a transistor electrical parameter degradation equation to the process manufacturer to provide the device SPICE model, and generating the transistor total dose effect SPICE model in different process angles;
circuit simulation of different process corners:
e. and d, taking the total dose effect models of different process angles generated in the step d as SPICE models, respectively carrying out direct current, transient state, noise and stability simulation on the circuit to be researched, and outputting a simulation result.
The invention relates to a circuit simulation method for coupling total dose effect and process fluctuation, which has the following effects: and the total dose radiation response characteristics of the circuit under different process angle conditions are accurately simulated.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any of the above-described embodiments may be modified or varied without departing from the spirit and scope of the invention, as appreciated by those skilled in the art. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (1)

1. A circuit simulation method for coupling total dose effect and process fluctuation is characterized by comprising the following steps:
determining the total dose effect related process parameters:
a. determining the doping concentration of a transistor channel as a total dose effect related process parameter;
transistor total dose irradiation test:
b. selecting 6-36 transistors with the same layout structure and threshold voltage type, testing transfer characteristic curves and output characteristic curves of the transistors, then carrying out total dose irradiation tests with the same dose rate and irradiation bias conditions on all the transistors, and testing the transfer characteristic curves and the output characteristic curves of the transistors after irradiation;
extracting parameters of a transistor electrical parameter degradation equation:
c. the transistor electrical Parameter degradation equation is Δ Parameter ═ f (D, Nch), where Δ Parameter represents the transistor electrical Parameter drift amount caused by total dose radiation, D is the irradiation dose, Nch is the channel doping concentration, the expression of the function f (D, Nch) is related to the specific transistor electrical Parameter and the corresponding radiation damage mechanism, the function f (D, Nch) contains fitting parameters, it is necessary to extract according to the test data, extract the transistor threshold voltage according to the test result of the transistor transfer characteristic curve before irradiation, and further calculate the transistor channel doping concentration, and the specific calculation formula is:
Figure FDA0002733439320000011
in the formula VthIs a threshold voltage, VFBIn order to be at a flat-band voltage,
Figure FDA0002733439320000012
is the potential difference between the intrinsic fermi level and the fermi level, epsilonsiPermittivity of a silicon material, CoxQ is the amount of electron charge for oxide capacitance. The transistor threshold voltages with the same layout structure and threshold voltage type are different due to process fluctuation, further the channel doping concentration is different, according to the test results of the transistor transfer characteristic curve and the output characteristic curve after the radiation dose D, the electrical Parameter degradation delta Parameter of different transistors is extracted, and the data of the delta Parameter changing along with Nch are obtained. Extracting fitting parameters in the function f (D, Nch) according to the data of the change of the delta Parameter along with the Nch;
generating total dose effect models of transistors at different process angles:
d. calling a process manufacturer to provide a device SPICE model, carrying out FF, SF, SS, FS and TT process angle transfer characteristic curve simulation on the transistor in the step c, extracting transistor threshold voltage, calculating Nch of transistors in different process angles according to threshold voltage values, wherein a calculation formula is consistent with the step c, updating a calculation value of the Nch to a function f (D, Nch), adding a transistor electrical parameter degradation equation to the process manufacturer to provide the device SPICE model, and generating the transistor total dose effect SPICE model in different process angles;
circuit simulation of different process corners:
e. and d, taking the total dose effect models of different process angles generated in the step d as SPICE models, respectively carrying out direct current, transient state, noise and stability simulation on the circuit to be researched, and outputting a simulation result.
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CN113341761A (en) * 2021-05-20 2021-09-03 西安电子科技大学 Modeling method and system for total dose effect of CMOS digital integrated circuit
CN113591320A (en) * 2021-08-09 2021-11-02 西安电子科技大学 Coupling simulation method for hot carrier effect and total dose effect
CN113945833A (en) * 2021-09-29 2022-01-18 清华大学 Method and platform for testing total ionizing radiation dose and electromagnetic radiation synergistic effect
CN114169194A (en) * 2021-11-25 2022-03-11 中国科学院新疆理化技术研究所 Simulation analysis method for total ionization dose effect of multi-gate fin field effect transistor

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Publication number Priority date Publication date Assignee Title
CN113129994A (en) * 2021-03-29 2021-07-16 深圳市国微电子有限公司 Storage system performance adjusting method and storage system
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CN113341761A (en) * 2021-05-20 2021-09-03 西安电子科技大学 Modeling method and system for total dose effect of CMOS digital integrated circuit
CN113341761B (en) * 2021-05-20 2024-04-05 西安电子科技大学 Modeling method and system for total dose effect of CMOS digital integrated circuit
CN113591320A (en) * 2021-08-09 2021-11-02 西安电子科技大学 Coupling simulation method for hot carrier effect and total dose effect
CN113945833A (en) * 2021-09-29 2022-01-18 清华大学 Method and platform for testing total ionizing radiation dose and electromagnetic radiation synergistic effect
CN114169194A (en) * 2021-11-25 2022-03-11 中国科学院新疆理化技术研究所 Simulation analysis method for total ionization dose effect of multi-gate fin field effect transistor

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