CN114597312A - Perovskite solar cell with double electron transmission layers - Google Patents
Perovskite solar cell with double electron transmission layers Download PDFInfo
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- CN114597312A CN114597312A CN202210231270.8A CN202210231270A CN114597312A CN 114597312 A CN114597312 A CN 114597312A CN 202210231270 A CN202210231270 A CN 202210231270A CN 114597312 A CN114597312 A CN 114597312A
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- transport layer
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- 230000005540 biological transmission Effects 0.000 title claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 230000005525 hole transport Effects 0.000 claims abstract description 27
- 230000031700 light absorption Effects 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims description 22
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 11
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 9
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 9
- 229940112669 cuprous oxide Drugs 0.000 claims description 9
- 239000004408 titanium dioxide Substances 0.000 claims description 9
- HFPFFUWYNWCJPE-UHFFFAOYSA-M C[Pb]I Chemical group C[Pb]I HFPFFUWYNWCJPE-UHFFFAOYSA-M 0.000 claims description 7
- 239000005083 Zinc sulfide Substances 0.000 claims description 6
- 229910052793 cadmium Inorganic materials 0.000 claims description 6
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 6
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 230000003667 anti-reflective effect Effects 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 230000005684 electric field Effects 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 abstract description 5
- 238000005452 bending Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention relates to a perovskite solar cell with double electron transmission layers, and belongs to the technical field of structural design of perovskite solar cells. The solar cell comprises a hole transport layer, a light absorption layer, a first electron transport layer and a second electron transport layer which are stacked from top to bottom, wherein a first metal grid line is arranged on the top surface of the hole transport layer, a second metal grid line is arranged on the bottom surface of the second electron transport layer, and in the structure of the traditional perovskite solar cell, one electron transport layer is added, the transmission of photon-generated carriers is promoted mainly by adjusting a built-in electric field, so that high open-circuit voltage and short-circuit current density are obtained, and the conversion efficiency of the cell is improved to the greatest extent.
Description
Technical Field
The invention relates to the technical field of structural design of perovskite solar cells, in particular to a perovskite solar cell with double electron transmission layers.
Background
In recent years, the cell Conversion Efficiency (PCE) of Perovskite Solar Cells (PSCs) has risen from the first 3.8% to over 25%. The rapid improvement of the cell conversion efficiency of the perovskite solar cell is mainly due to the excellent photoelectric properties of the perovskite material, such as high carrier mobility and adjustable band gap. In practical production processes, however, many difficulties are still encountered, such as the cost of materials, the choice of electron and hole transport layers, and the conversion efficiency limit of conventional structures. Changing the structural design of the traditional perovskite solar cell to improve the conversion efficiency of the solar cell is an important direction.
Disclosure of Invention
The invention aims to provide a perovskite solar cell with double electron transport layers, and the structural design of the traditional perovskite solar cell is changed to improve the conversion efficiency of the perovskite solar cell.
In order to achieve the purpose, the invention provides the following scheme:
a double electron transport layer perovskite solar cell comprises a hole transport layer, a light absorption layer, a first electron transport layer and a second electron transport layer which are arranged in a stacking mode from top to bottom; a first metal grid line is arranged on the top surface of the hole transport layer; and a second metal grid line is arranged on the bottom surface of the second electron transmission layer.
In some embodiments, the material of the hole transport layer is heavily doped p-type semiconductor cuprous oxide; the material of the light absorption layer is methyl lead iodide doped with donor impurities; the first electron transmission layer is made of heavily-doped n-type semiconductor zinc sulfide doped with cadmium; the second electron transport layer is made of heavily doped n-type semiconductor titanium dioxide.
In some embodiments, the solar cell further comprises a first anti-reflective film disposed between the hole transport layer and the first metal grid line and a second anti-reflective film disposed between the second electron transport layer and the second metal grid line.
In some embodiments, the material of the first and second antireflection films is silicon nitride.
In some embodiments, the hole transport layer has a thickness of 300nm and a doping concentration of 1.0 x 1019cm-3。
In some embodiments, the light absorption layer has a thickness of 600nm and a doping concentration of 1.0 x 1010cm-3。
In some embodiments, the first electron transport layer has a thickness of 40nm and a doping concentration of 1.0 x 1017cm-3。
In some embodiments, the second electron transport layer has a thickness of 40-50nm and a doping concentration of 1.0 x 1018cm-3。
In some embodiments, the hole transport layer and the second electron transport layer are subjected to a texturing process.
In some embodiments, the first metal gate line and the second metal gate line are subjected to a texturing process.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention provides a perovskite solar cell with double electron transport layers, which comprises a hole transport layer, a light absorption layer, a first electron transport layer and a second electron transport layer which are stacked from top to bottom, wherein a first metal grid line is arranged on the top surface of the hole transport layer, a second metal grid line is arranged on the bottom surface of the second electron transport layer, and an electron transport layer is added on the structure of the traditional perovskite solar cell and is mainly used for promoting the transmission of photon-generated carriers by adjusting a built-in electric field to obtain high open-circuit voltage and short-circuit current density, so that the conversion efficiency of the cell is improved to the maximum extent.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a solar cell provided in embodiment 1 of the present invention.
Description of the symbols:
1-a first metal gate line; 2-a first antireflection film; 3-a hole transport layer; 4-a light absorbing layer; 5-a first electron transport layer; 6-a second electron transport layer; 7-a second antireflection film; 8-a second metal grid line.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a perovskite solar cell with double electron transport layers, and the structural design of the traditional perovskite solar cell is changed to improve the conversion efficiency of the perovskite solar cell.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Example 1:
the present embodiment is configured to provide a double electron transport layer perovskite solar cell, as shown in fig. 1, the solar cell includes a hole transport layer 3, a light absorption layer 4, a first electron transport layer 5, and a second electron transport layer 6 stacked from top to bottom, a first metal grid line 1 is disposed on a top surface of the hole transport layer 3, and a second metal grid line 8 is disposed on a bottom surface of the second electron transport layer 6.
In the embodiment, an electron transmission layer is added on the structure of the traditional perovskite solar cell, and the transmission of photon-generated carriers is promoted mainly by adjusting a built-in electric field, so that high open-circuit voltage and short-circuit current density are obtained, and the conversion efficiency of the cell is improved to the greatest extent.
As an optional implementation manner, in this embodiment, the hole transport layer 3 is made of heavily doped p-type semiconductor cuprous oxide, the light absorption layer 4 is made of methyl lead iodide doped with donor impurities, the two electron transport layers are made of two materials, the first electron transport layer 5 is made of heavily doped n-type semiconductor zinc sulfide doped with cadmium, and the second electron transport layer 6 is made of heavily doped n-type semiconductor titanium dioxide. The solar cell structure has excellent carrier transmission capability, so that the transmission loss of photon-generated carriers and electron holes is reduced possibly, and the conversion efficiency of the solar cell is improved finally. In addition, through heavy doping of p-type semiconductor cuprous oxide, n-type semiconductor zinc sulfide cadmium doping and n-type semiconductor titanium dioxide, energy band bending is achieved, so that the light absorption layer methyl lead iodide is matched with the energy band of the electron transmission layer, carrier loss in the transmission process is reduced, and the conversion efficiency of the solar cell is further improved.
Specifically, the doping concentration of the light absorption layer 4 in this embodiment may be 1.0 x 1010cm-3The doping concentration of the hole transport layer 3 may be 1.0 x 1019cm-3The doping concentration of the first electron transport layer 5 may be 1.0 x 1017cm-3The doping concentration of the second electron transport layer 6 may be 1.0 x 1018cm-3. Of course, the doping concentrations of the hole transport layer 3, the light absorption layer 4, the first electron transport layer 5, and the second electron transport layer 6 in this embodiment may also take other values as long as it is ensured that the heavy doping of the hole transport layer 3, the first electron transport layer 5, and the second electron transport layer 6 can be achieved.
In order to improve the conductivity between the heavily doped p-type semiconductor cuprous oxide and the first metal grid line 1, a first antireflection film 2 can be added between the heavily doped p-type semiconductor cuprous oxide and the first metal grid line. Meanwhile, in order to improve the conductivity between the heavily doped n-type semiconductor titanium dioxide and the second metal grid line 8, a second antireflection film 7 can be added between the heavily doped n-type semiconductor titanium dioxide and the second metal grid line. Namely, the solar cell of the embodiment further includes a first antireflection film 2 disposed between the hole transport layer 3 and the first metal grid line 1, and a second antireflection film 7 disposed between the second electron transport layer 6 and the second metal grid line 8, so as to improve conductivity.
Further, the material used for the first antireflection film 2 and the second antireflection film 7 in this embodiment may be silicon nitride.
In the novel structure of the double-electron-transport-layer methyl lead iodide perovskite solar cell provided in this embodiment, a light absorption layer methyl lead iodide doped with donor impurities is used as a substrate, and the structure from an emitter to a back electric field is sequentially as follows: the structure of the traditional perovskite solar cell is further improved, the double electron transmission layers are adopted to improve the extraction and transmission of electrons, and the open-circuit voltage and the short-circuit current are improved.
In order to further improve the conversion efficiency of the solar cell, the thickness of the hole transport layer 3 of the present embodiment is preferably 300 nm.
Further, the thickness of the light absorbing layer 4 in this embodiment is about 600nm, and the thickness of the light absorbing layer 4 is controlled to be about 600nm, so that the utilization rate of the material can be improved to the maximum extent, and the waste of the methyl lead iodide can be reduced.
In order to further improve the performance of the solar cell, the thickness of the first electron transport layer 5 of the present embodiment is preferably 40 nm.
In order to further improve the electron transport efficiency, the thickness of the second electron transport layer 6 of the present embodiment is preferably 40 to 50 nm.
Further, the hole transport layer 3 and the second electron transport layer 6 of the present embodiment may be subjected to a texturing process. The second electron transport layer 6 is subjected to texturing treatment, so that the short-circuit current of the perovskite solar cell can be increased.
The surface metal gate lines, namely the first metal gate line 1 and the second metal gate line 8, of the embodiment can be subjected to texturing treatment, namely, texturing surfaces can be manufactured, so that composite consumption is reduced, and the open-circuit voltage of the battery is improved.
The embodiment improves the structure of the traditional nip type perovskite solar cell, adopts the double electron transmission layers, promotes the generation of photon-generated carriers and the transmission of electrons and holes, increases the open-circuit voltage and the short-circuit current to the maximum extent, and promotes the conversion efficiency of the perovskite solar cell. In addition, the p-type semiconductor cuprous oxide, the n-type semiconductor zinc sulfide doped with cadmium and the n-type semiconductor titanium dioxide are heavily doped, and a built-in electric field formed by the p-type semiconductor cuprous oxide, the n-type semiconductor zinc sulfide doped with cadmium and the n-type semiconductor titanium dioxide enables photo-generated holes to enter the cuprous oxide and photo-generated electrons to enter a back electric field through the zinc sulfide doped with cadmium and the titanium dioxide, so that the built-in potential of the solar cell can be further improved.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (10)
1. The perovskite solar cell with the double electron transport layers is characterized by comprising a hole transport layer, a light absorption layer, a first electron transport layer and a second electron transport layer which are arranged in a stacked mode from top to bottom; a first metal grid line is arranged on the top surface of the hole transport layer; and a second metal grid line is arranged on the bottom surface of the second electron transmission layer.
2. The solar cell of claim 1, wherein the material of the hole transport layer is a heavily doped p-type semiconductor cuprous oxide; the material of the light absorption layer is methyl lead iodide doped with donor impurities; the first electron transmission layer is made of heavily-doped n-type semiconductor zinc sulfide doped with cadmium; the second electron transport layer is made of heavily doped n-type semiconductor titanium dioxide.
3. The solar cell of claim 1, further comprising a first anti-reflective film disposed between the hole transport layer and the first metal gridline and a second anti-reflective film disposed between the second electron transport layer and the second metal gridline.
4. The solar cell according to claim 3, wherein a material of the first antireflection film and the second antireflection film is silicon nitride.
5. The solar cell of claim 1, wherein the hole transport layer has a thickness of 300nm and a doping concentration of 1.0 x 1019cm-3。
6. The solar cell according to claim 1, wherein the light absorbing layer has a thickness of 600nm and a doping concentration of 1.0 x 1010cm-3。
7. The solar cell of claim 1, wherein the first electron transport layer has a thickness of 40nm and a doping concentration of 1.0 x 1017cm-3。
8. The solar cell of claim 1, wherein the second electron transport layer has a thickness of 40-50nm and a doping concentration of 1.0 x 1018cm-3。
9. The solar cell of claim 1, wherein the hole transport layer and the second electron transport layer are textured.
10. The solar cell of claim 1, wherein the first metal grid line and the second metal grid line are subjected to a texturing process.
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| CN202210231270.8A CN114597312A (en) | 2022-03-10 | 2022-03-10 | Perovskite solar cell with double electron transmission layers |
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| CN112490363A (en) * | 2020-11-26 | 2021-03-12 | 合肥工业大学 | Preparation method of perovskite solar cell based on magnetron sputtering zinc oxide/tin dioxide double electron transport layer |
| WO2022009636A1 (en) * | 2020-07-06 | 2022-01-13 | パナソニックＩｐマネジメント株式会社 | Solar cell and photoelectric conversion element |
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| CN106449982A (en) * | 2016-10-11 | 2017-02-22 | 中山大学 | Perovskite solar cell taking chromium oxide as electronic transmission layer and manufacturing method thereof |
| CN109473554A (en) * | 2018-11-16 | 2019-03-15 | 常州大学 | A kind of full-inorganic perovskite solar cell and preparation method thereof |
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Application publication date: 20220607 |