CN111446368A - Perovskite photovoltaic device and manufacturing method thereof - Google Patents
Perovskite photovoltaic device and manufacturing method thereof Download PDFInfo
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Abstract
A perovskite photovoltaic device includes a substrate, an anode, a hole transport layer (PEDOT: PSS or nickel oxide), a perovskite light absorption layer, a first electron transport layer (an electrically conductive organic compound (electron transport layer 1)), a second electron transport layer (an electron transport layer 2 (Nb) and a method for manufacturing the same, which are sequentially stacked2O5) And a cathode. The perovskite photovoltaic device and the preparation method thereof have the advantages of higher performance, lower processing cost and capability of realizing large-area processing, thereby having good application prospect in the field of perovskite photovoltaic devices.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a perovskite photovoltaic device and a manufacturing method thereof.
Background
As early as 2006, the group of subjects taught by Miyasaka at the university of tung sholbine of japan tried perovskite materials as light-absorbing materials for use in dye-sensitized solar cells, and they first reported dye-sensitized perovskite solar cells having a solar conversion efficiency of 3.8% in 2009 (j. Am. chem. soc., 2009, 131, 6050). Next, the problem group of Nam-Gyu Park university at korea university, by optimizing the concentration of the precursor solution and the annealing temperature, the energy conversion efficiency is improved by nearly one time (Nanoscale, 2011, 3, 4088), while the perovskite solar cells really get attention that they use perovskite materials in all-solid-state structures similar to organic thin-film solar cells and greatly improve the energy conversion efficiency and stability (sci. rep. (2012), 2, 591). Since the perovskite solar cell has significant advantages of low raw material and manufacturing costs, and the performance of the perovskite solar cell is rapidly improved in recent years with the great input of research efforts in the related fields.
Such perovskite materials typically have ABX3Of the formula (II) wherein A+Typically a monovalent cation (usually methylamine ion (CH)3NH3 +，MA+) Cesium ion (Cs), formamidine ion (FA)+）），B2+Is an inorganic cation (typically Pb)2+），X-Is a halogen anion (generally I)-、Cl-Or Br-). The band gap of the perovskite material can be continuously regulated within 1.6 to 3.2 electron volts according to the type of the halogen element used. Using formamidine ion (CH (NH)2)2 +，FA+) Replacement MA+Or use Sn2+To replace Pb2+Or the band gap of the perovskite material can be further regulated and controlled by adopting a mixed ion method and the like, so that the sunlight absorption in a wider range is realized. Since the perovskite solar cell was originally developed from the dye-sensitized solar cell, the mesoporous structure is common. In this structure, in dense TiO2A layer of TiO is also arranged on the selective electron transport layer2Mesoporous layer composed of nanoparticles. The mesoporous layer is used as a framework for depositing the perovskite film on one hand, and the other hand can reduce the distance of electron diffusion, thereby improving the electron collection efficiency. The thickness of the mesopores used in the initial study was about 500-600 nm, and the perovskite light absorbing material was completely penetrated into the mesoporous framework. However, as the research proceeds, it has been found that a thinner mesoporous layer of about 150 to 20 can be used0 nm, and a continuous and compact perovskite light absorption layer is formed on the surface of the perovskite light absorption layer, so that better device performance can be obtained. Because the diffusion length of electrons and holes in the perovskite material is very long, the perovskite solar cell with higher efficiency can be obtained by using a planar structure after the mesoporous layer is completely removed, and the planar perovskite solar cell with a simpler structure has obvious advantages in preparation structure compared with a mesoporous perovskite solar cell, so that the planar perovskite solar cell has higher commercial potential.
The common perovskite solar cell device structure at present comprises a mesoporous type, a planar type (n-i-p) and a planar inverted type (p-i-n). The current n-type electron transport material used in the planar structure is generally a metal oxide semiconductor material, the p-type hole transport material is generally an organic hole transport material, and the organic hole transport material used has low mobility, so that a device is often doped with a dopant to obtain high performance, which limits further commercial application. The n-type electron transport materials used in the planar inversion structure at present are generally fullerene and derivatives thereof, and the materials have the defects of high production cost, difficult purification and the like which restrict the large-scale production of the materials. Therefore, the development of a planar perovskite photovoltaic cell device with low cost, large area and stability and a structure thereof are imminent.
Disclosure of Invention
The invention aims to provide a perovskite photovoltaic device and a manufacturing method thereof, wherein the perovskite photovoltaic device can obtain higher performance and excellent stability, and a feasible implementation scheme is provided for obtaining high performance of the photovoltaic device; the preparation method can be used for large-area preparation of the perovskite photovoltaic device, and is beneficial to reduction of preparation cost.
The invention is realized by the following technical scheme: a perovskite photovoltaic device comprises a substrate, an anode layer formed on the substrate, a hole transport layer formed on the anode layer and adopting PEDOT: PSS or nickel oxide, a perovskite light absorption layer formed on the hole transport layer and composed of CsPbIBr, a first electron transport layer (electron transport layer 1) formed on the perovskite light absorption layer and adopting a conductive organic compound, a second electron transport layer (electron transport layer 2) formed on the first electron transport layer and adopting niobium pentoxide, and a cathode layer formed on the second electron transport layer.
To further better realize the perovskite photovoltaic device of the present invention,
the hole transport layer further comprises an electron blocking layer and/or an exciton blocking layer;
and/or
The first electron transport layer further comprises a hole blocking layer and/or an exciton blocking layer;
and/or
The second electron transport layer further comprises a hole blocking layer and/or an exciton blocking layer;
and/or
An anode buffer layer is arranged between the anode layer and the hole transport layer;
and/or
And a cathode buffer layer is arranged between the cathode layer and the second electron transport layer.
A method of manufacturing a perovskite photovoltaic device, comprising:
(1) obtaining a substrate;
(2) ultrasonically cleaning the substrate by using acetone, a micron-sized special semiconductor detergent, deionized water and isopropanol in sequence and drying;
(3) forming an anode layer on the substrate;
(4) forming PEDOT on the anode layer, wherein a PSS layer or a nickel oxide layer is used as a hole transport layer;
(5) spin coating a perovskite light absorption layer having a composition comprising CsPbIBr on the hole transport layer;
(6) performing heat treatment at 40-100 ℃ obtained in the step (5), namely performing heat treatment on the substrate with the perovskite light absorption layer at 40-100 ℃;
(7) spin-coating a conductive organic compound on the perovskite light absorption layer as a first electron transport layer through the step (6);
(8) evaporating a niobium pentoxide layer on the first electron transport layer to form a second electron transport layer;
(9) and forming a cathode layer on the second electron transport layer.
In order to better realize the manufacturing method of the perovskite photovoltaic device, the substrate is glass, quartz, sapphire, polyimide, polyethylene terephthalate, polyethylene naphthalate, metal or alloy film and the like.
In order to better realize the manufacturing method of the perovskite photovoltaic device, the anode layer and the cathode layer are made of metal, metal oxide or poly (3, 4-ethylenedioxythiophene) -poly (styrenesulfonic acid) and modified products thereof.
In order to better realize the manufacturing method of the perovskite photovoltaic device, the metal is aluminum, silver-magnesium alloy, silver or gold and the like; the metal oxide is one or the combination of more than two of indium tin oxide, fluorine-doped tin dioxide, zinc oxide and indium gallium zinc oxide.
To further better realize the manufacturing method of the perovskite photovoltaic device, the method further comprises the step of forming an electron blocking layer and/or an exciton blocking layer on the hole transport layer, namely the electron blocking layer and/or the exciton blocking layer can be formed on the layer adopting PEDOT, PSS or nickel oxide to be used as the whole hole transport layer.
Further, in order to better realize the method for manufacturing a perovskite photovoltaic device according to the present invention, the method further includes forming a hole blocking layer and/or an exciton blocking layer on the perovskite light absorption layer, that is, the hole blocking layer and/or the exciton blocking layer and the conductive organic compound may be formed on the perovskite light absorption layer as an integral first electron transport layer.
Further, to better realize the manufacturing method of the perovskite photovoltaic device, the method further comprises the step of forming a hole blocking layer and/or an exciton blocking layer on the first electron transport layer, namely forming the hole blocking layer and/or the exciton blocking layer and the niobium pentoxide layer on the first electron transport layer to be used as an integral second electron transport layer.
To better realize the manufacturing method of the perovskite photovoltaic device, an anode buffer layer is formed between the anode layer and the hole transport layer.
To better realize the manufacturing method of the perovskite photovoltaic device, a cathode buffer layer is formed between the cathode layer and the second electron transport layer.
Compared with the prior art, the invention has the following advantages and beneficial effects:
the perovskite photovoltaic device can obtain higher performance and excellent stability, and a feasible implementation scheme is provided for obtaining high performance of the photovoltaic device; the preparation method can be used for large-area preparation of the perovskite photovoltaic device, and is beneficial to reduction of preparation cost.
The hole transport layer of the device can be prepared at a lower temperature, and a feasible implementation scheme is provided for realizing the flexible perovskite photovoltaic device.
The electron transport layer of the device can be prepared in a large area at a lower temperature, and a feasible implementation scheme is provided for preparing a large-area perovskite solar cell device at a low temperature.
Drawings
FIG. 1 is a schematic diagram of a layered structure of a perovskite photovoltaic device according to one embodiment of the present invention, in order of a substrate/anode/hole transport layer (PEDOT: PSS or NiO)x) Perovskite light absorption layer/first electron transport layer (electron transport layer 1 (conductive organic compound))/second electron transport layer (electron transport layer 2 (Nb)2O5) )/cathode.
FIG. 2 is a chemical structural formula of a high molecular conductive organic compound electron transport material used in a perovskite photovoltaic device according to one embodiment of the present invention,
fig. 3 is a graph of current density-voltage characteristics of the resulting perovskite photovoltaic device of example 9;
fig. 4 is a graph of current density-voltage characteristics of the resulting perovskite photovoltaic device of example 10;
fig. 5 is a graph of current density-voltage characteristics of the resulting perovskite photovoltaic device of example 11.
Detailed Description
The following examples are given to illustrate the present invention and it is necessary to point out here that the following examples are given only for the purpose of further illustration and are not to be construed as limiting the scope of the invention, which is susceptible to numerous insubstantial modifications and adaptations by those skilled in the art in light of the present disclosure.
Example 1:
a perovskite photovoltaic device, as shown in FIG. 1, comprises a substrate, an anode layer formed on the substrate, a hole transport layer formed on the anode layer using PEDOT: PSS or nickel oxide, a perovskite light absorption layer formed on the hole transport layer and composed of CsPbIBr, a first electron transport layer (electron transport layer 1) formed on the perovskite light absorption layer using a conductive organic compound (shown in FIG. 2), a second electron transport layer (electron transport layer 2) formed on the first electron transport layer using niobium pentoxide, and a cathode layer formed on the second electron transport layer.
Example 2:
the embodiment is further optimized on the basis of the above embodiment, and the same parts as those in the above technical solution will not be described again, as shown in fig. 1, in order to further better implement the perovskite photovoltaic device according to the present invention,
the hole transport layer further comprises an electron blocking layer and/or an exciton blocking layer;
and/or
The first electron transport layer further comprises a hole blocking layer and/or an exciton blocking layer;
and/or
The second electron transport layer further comprises a hole blocking layer and/or an exciton blocking layer;
and/or
An anode buffer layer is arranged between the anode layer and the hole transport layer;
and/or
And a cathode buffer layer is arranged between the cathode layer and the second electron transport layer.
Example 3:
this embodiment is further optimized on the basis of any one of the above embodiments, and as shown in fig. 1, the method for manufacturing a perovskite photovoltaic device includes:
(1) obtaining a substrate; the substrate may be a rigid substrate such as glass, quartz, sapphire, etc.; or a flexible substrate such as polyimide, polyethylene terephthalate, polyethylene naphthalate, or other polyester-based materials; or metal, alloy or stainless steel film;
(2) ultrasonically cleaning the substrate by using acetone, a micron-sized special semiconductor detergent, deionized water and isopropanol in sequence and drying;
(3) forming an anode layer on the substrate, wherein the anode layer is made of metal, metal oxide or poly (3, 4-ethylenedioxythiophene) -poly (styrenesulfonic acid) and modified products thereof; the metal can be aluminum, silver-magnesium alloy, silver or gold, etc.; the metal oxide is one or the combination of more than two of indium tin oxide, fluorine-doped tin dioxide, zinc oxide and indium gallium zinc oxide;
(4) forming PEDOT on the anode layer, wherein a PSS layer or a nickel oxide layer is used as a hole transport layer;
(5) spin coating a perovskite light absorption layer having a composition comprising CsPbIBr on the hole transport layer;
(6) performing heat treatment at 40-100 ℃ obtained in the step (5), namely performing heat treatment on the substrate with the perovskite light absorption layer at 40-100 ℃;
(7) spin-coating a conductive organic compound on the perovskite light absorption layer as a first electron transport layer through the step (6);
(8) evaporating a niobium pentoxide layer on the first electron transport layer to form a second electron transport layer;
(9) in the second electron transport layer (electron transport layer 2 (Nb))2O5) A metal, a metal oxide orPoly (3, 4-ethylenedioxythiophene) -poly (styrenesulfonic acid) and modified products thereof; the metal can be aluminum, silver-magnesium alloy, silver or gold, etc.; the metal oxide is one or the combination of more than two of indium tin oxide, fluorine-doped tin dioxide, zinc oxide and indium gallium zinc oxide.
Example 4:
this embodiment is further optimized based on embodiment 3, and the same portions as those in the foregoing technical solutions will not be repeated herein, and further to better implement the method for manufacturing a perovskite photovoltaic device according to the present invention, the method further includes forming an electron blocking layer and/or an exciton blocking layer on the hole transport layer, that is, the electron blocking layer and/or the exciton blocking layer may also be formed on a layer using PEDOT, PSS, or nickel oxide as an entire hole transport layer.
Example 5:
this embodiment is further optimized based on embodiment 3 or 4, and the same portions as those in the foregoing technical solutions will not be repeated herein, and further to better implement the method for manufacturing a perovskite photovoltaic device according to the present invention, the method further includes forming a hole blocking layer and/or an exciton blocking layer on the perovskite light absorption layer, that is, the hole blocking layer and/or the exciton blocking layer and the conductive organic compound layer may also be formed on the perovskite light absorption layer as an integral first electron transport layer.
Example 6:
this embodiment is further optimized based on embodiment 3 or 4 or 5, and the same portions as those in the foregoing technical solutions will not be repeated herein, and further to better implement the method for manufacturing a perovskite photovoltaic device according to the present invention, the method further includes forming a hole blocking layer and/or an exciton blocking layer on the first electron transport layer, that is, forming a hole blocking layer and/or an exciton blocking layer and a niobium pentoxide layer on the first electron transport layer to serve as an integral second electron transport layer.
Example 7:
the present embodiment is further optimized based on embodiment 3 or 4 or 5 or 6, and the same portions as those in the foregoing technical solutions will not be described herein again, and further to better implement the manufacturing method of the perovskite photovoltaic device according to the present invention, the method further includes forming an anode buffer layer between the anode layer and the hole transport layer.
Example 8:
the present embodiment is further optimized based on embodiment 3 or 4 or 5 or 6 or 7, and the same portions as those in the foregoing technical solutions will not be described herein again, and further to better implement the manufacturing method of the perovskite photovoltaic device according to the present invention, the method further includes forming a cathode buffer layer between the cathode layer and the second electron transport layer.
Example 9:
PSS is used as a hole transmission layer, after the PSS is coated, the PSS is heated on a heating table at 125 ℃ for 15 minutes, then the PSS is transferred into a glove box filled with low-water oxygen and high-purity nitrogen, a perovskite light absorption layer with the components of CsPbIBr is prepared by one-step spin coating in the glove box, then the PSS is heated on the heating table at 40 ℃ for 2 minutes and 100 ℃ for 30 minutes, then a conductive organic compound FBR is coated on the perovskite light absorption layer in a spin coating mode, then the device is placed into electron beam evaporation equipment, a cooling pump is started, and when the vacuum degree in an evaporation cavity is less than 5 × 10-4And starting electron beam evaporation of the film after Pa. Using a specific mask plate to sequentially evaporate an electron transport layer niobium pentoxide (Nb)2O5) By adjusting the electron transport layer Nb2O5The thickness of the perovskite solar cell is 40-100 nanometers, so that the performance of the perovskite photovoltaic device is optimized, and an electron transport layer Nb is prepared by using electron beam evaporation equipment2O5The low-temperature large-area flexible battery device can be prepared by using different masks; and using electron beam to evaporate metal silver as the cathode of the device. The evaporation rate and thickness of each functional layer of evaporation are measured by a quartz crystal oscillator film thickness detectorAnd (4) monitoring, wherein the thickness of the electron transmission layer is controlled to be 70 nanometers, and the thickness of the cathode layer material metal silver is controlled to be not less than 80 nanometers. The structure of the perovskite photovoltaic device is as follows: glass substrate/ITO/PEDOT PSS/perovskite layer/FBR/Nb2O5(70 nm)/silver (100 nm).
The perovskite photovoltaic device obtained in the example is subjected to a photoelectric performance test:
and after the device is prepared, taking out the device from the evaporation cavity. The test was then conducted in air and the device current-voltage information was determined from a 2400 power supply meter manufactured by giemley (Keithley). The performances of the device such as current density, filling factor, power conversion efficiency and the like can be respectively calculated through information such as current, voltage, light intensity and the like.
The perovskite photovoltaic device obtained by the implementation comprises the following components: glass substrate/ITO/PEDOT PSS/perovskite layer/FBR/Nb2O5The current density-voltage characteristic curve of (70 nm)/silver (100 nm) is shown in fig. 3.
The example resulted in a highly efficient perovskite photovoltaic device.
Example 10:
the preparation process is the same as example 9, a plurality of ITO conductive glass substrates of the same batch number are taken, the specification is 25 mm × 25 mm, the thickness of the ITO is about 90 nm, the sheet resistance is about 20 ohm/square, acetone, micron-sized special semiconductor detergent, deionized water and isopropanol are sequentially used for ultrasonic cleaning for 15 minutes to remove dirt on the surface of the substrate, then the substrate is placed into a constant temperature box for drying at 80 ℃, and then NiO is prepared on the ITO substrate by using an electron beam evaporation methodxThe perovskite light absorption layer with the component CsPbIBr is prepared by one-step spin coating in a glove box filled with low-water oxygen and high-purity nitrogen, then the perovskite light absorption layer is heated on a heating table for 2 minutes at 40 ℃ and 30 minutes at 100 ℃ in sequence, then the conductive organic compound FBR is prepared by spin coating on the perovskite light absorption layer, then the device is arranged in an electron beam evaporation equipment, a cooling pump is started, and when the vacuum degree in an evaporation cavity is less than 5 × 10-4And starting electron beam evaporation of the film after Pa. Using a specific mask, according toNiobium pentoxide (Nb) as secondary evaporated electron transport layer2O5) By adjusting the electron transport layer Nb2O5The thickness of the perovskite solar cell is 40-100 nanometers, so that the performance of the perovskite photovoltaic device is optimized, and an electron transport layer Nb is prepared by using electron beam evaporation equipment2O5The low-temperature large-area production method can realize low-temperature large-area production, so that a large-area flexible photovoltaic device can be prepared by using different masks; and using electron beam to evaporate metal silver as the cathode of the device. The evaporation rate and the thickness of each evaporated functional layer are monitored in real time by a quartz crystal oscillator film thickness detector, and the thickness of the electron transmission layer is controlled to be 70 nanometers, and the thickness of the cathode layer material metal silver is controlled to be not less than 80 nanometers. The structure of the perovskite photovoltaic device is as follows: glass substrate/ITO/NiOxPerovskite layer/FBR/Nb2O5(70 nm)/silver (100 nm).
The perovskite photovoltaic device obtained in the example is subjected to a photoelectric performance test:
and after the device is prepared, taking out the device from the evaporation cavity. The test was then conducted in air and the device current-voltage information was determined from a 2400 power supply meter manufactured by giemley (Keithley). The performances of the device such as current density, filling factor, power conversion efficiency and the like can be respectively calculated through information such as current, voltage, light intensity and the like.
The perovskite photovoltaic device obtained by the implementation comprises the following components: glass substrate/ITO/NiOxPerovskite layer/FBR/Nb2O5The current density-voltage characteristic curve of (70 nm)/silver (100 nm) is shown in fig. 4.
The example resulted in a highly efficient perovskite photovoltaic device.
Example 11:
the preparation process is the same as example 9, a plurality of ITO conductive glass substrates of the same batch number are taken, the specification is 25 mm × 25 mm, the thickness of the ITO is about 90 nm, the sheet resistance of the ITO is about 20 ohm/square, acetone, micron-sized semiconductor special detergent, deionized water and isopropanol are sequentially used for ultrasonic cleaning for 15 minutes to remove dirt on the surface of the substrate, then the substrate is placed into an incubator for drying at 80 ℃, and then oxygen is prepared on the ITO substrates by a spin coating methodNickel (NiO)x) The preparation method of the precursor solution of the layer and the nickel oxide comprises the following steps: dissolving nickel acetate tetrahydrate in ethylene glycol at 0.5M concentration, adding ethylenediamine solution at molar ratio to Ni2+1:1, heating the mixture on a heating table at 160 ℃ for 10 minutes after spin coating, heating the mixture on the heating table at 300 ℃ for 60 minutes, transferring the mixture into a glove box filled with low-water oxygen and high-purity nitrogen, preparing a perovskite light absorption layer with the component CsPbIBr by using one-step spin coating in the glove box, heating the mixture on the heating table at 40 ℃ for 2 minutes and heating the mixture at 100 ℃ for 30 minutes in sequence, preparing a conductive organic compound N2200 by spin coating on the perovskite light absorption layer, loading the device into an electron beam evaporation device, starting a cooling pump, and when the vacuum degree in an evaporation chamber is less than 5 × 10-4And starting electron beam evaporation of the film after Pa. Using a specific mask plate to sequentially evaporate an electron transport layer niobium pentoxide (Nb)2O5) By adjusting the electron transport layer Nb2O5The thickness of the perovskite layer is 40-100 nanometers, so that the performance of the perovskite photovoltaic device is optimized, and an electron transport layer Nb is prepared by using electron beam evaporation equipment2O5The low-temperature large-area photovoltaic device can be realized, so that a large-area photovoltaic device can be prepared by using different masks; and evaporating a metal silver material by using an electron beam to serve as a cathode of the device. The evaporation rate and the thickness of each functional layer of evaporation are monitored in real time by a quartz crystal oscillator film thickness detector, and the thickness of the electron transmission layer is controlled to be 70 nanometers, and the thickness of the cathode layer metal silver is controlled to be not less than 80 nanometers. The structure of the perovskite photovoltaic device is as follows: glass substrate/ITO/NiOxPerovskite layer/N2200/Nb2O5(70 nm)/silver (100 nm).
The perovskite photovoltaic device obtained by the implementation comprises the following components: glass substrate/ITO/NiOxPerovskite layer/N2200/Nb2O5The current density-voltage characteristic curve of (70 nm)/silver (100 nm) is shown in fig. 5.
The example resulted in a highly efficient perovskite photovoltaic device.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications and equivalent variations of the above embodiments according to the technical spirit of the present invention are included in the scope of the present invention.
Claims (10)
1. A perovskite photovoltaic device characterized in that: the anode layer is formed on the substrate, the hole transport layer which is formed on the anode layer and adopts PEDOT, PSS or nickel oxide, the perovskite light absorption layer which is formed on the hole transport layer and contains CsPbIBr in component, the first electron transport layer which is formed on the perovskite light absorption layer and adopts conductive organic compounds, the second electron transport layer which is formed on the first electron transport layer and adopts niobium pentoxide, and the cathode layer which is formed on the second electron transport layer.
2. The perovskite photovoltaic device of claim 1, wherein:
the hole transport layer further comprises an electron blocking layer and/or an exciton blocking layer;
and/or
The first electron transport layer further comprises a hole blocking layer and/or an exciton blocking layer;
and/or
The second electron transport layer further comprises a hole blocking layer and/or an exciton blocking layer;
and/or
An anode buffer layer is arranged between the anode layer and the hole transport layer;
and/or
And a cathode buffer layer is arranged between the cathode layer and the second electron transport layer.
3. The method of manufacturing a perovskite photovoltaic device as claimed in claim 1 or 2, wherein: the method comprises the following steps:
(1) obtaining a substrate;
(2) ultrasonically cleaning the substrate by using acetone, a micron-sized special semiconductor detergent, deionized water and isopropanol in sequence and drying;
(3) forming an anode layer on the substrate;
(4) forming PEDOT on the anode layer, wherein a PSS layer or a nickel oxide layer is used as a hole transport layer;
(5) spin coating a perovskite light absorption layer having a composition comprising CsPbIBr on the hole transport layer;
(6) carrying out heat treatment on the product obtained in the step (5) at 40-100 ℃;
(7) spin-coating a conductive organic compound on the perovskite light absorption layer as a first electron transport layer through the step (6);
(8) evaporating a niobium pentoxide layer on the first electron transport layer to form a second electron transport layer;
(9) and forming a cathode layer on the second electron transport layer.
4. The method of manufacturing a perovskite photovoltaic device as claimed in claim 3, characterized in that: the substrate is glass, quartz, sapphire, polyimide, polyethylene terephthalate, polyethylene naphthalate, metal or alloy film.
5. The method of manufacturing a perovskite photovoltaic device as claimed in claim 3 or 4, characterized in that: the anode layer and the cathode layer are metals, metal oxides or poly (3, 4-ethylenedioxythiophene) -poly (styrenesulfonic acid) and modified products thereof.
6. The method of manufacturing a perovskite photovoltaic device as claimed in claim 5, characterized in that: the metal is aluminum, silver-magnesium alloy, silver or gold; the metal oxide is one or the combination of more than two of indium tin oxide, fluorine-doped tin dioxide, zinc oxide and indium gallium zinc oxide.
7. The method of manufacturing a perovskite photovoltaic device as claimed in claim 3 or 4 or 6, characterized in that: further comprising forming an electron blocking layer and/or an exciton blocking layer on the hole transport layer.
8. The method of manufacturing a perovskite photovoltaic device as claimed in claim 3 or 4 or 6, characterized in that: further comprising forming a hole blocking layer and/or an exciton blocking layer on the perovskite light absorbing layer.
9. The method of manufacturing a perovskite photovoltaic device as claimed in claim 3 or 4 or 6, characterized in that: further comprising forming a hole blocking layer and/or an exciton blocking layer on the first electron transport layer.
10. The method of manufacturing a perovskite photovoltaic device as claimed in claim 3 or 4 or 6, characterized in that: and forming an anode buffer layer between the anode layer and the hole transport layer, and forming a cathode buffer layer between the cathode layer and the second electron transport layer.
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| CN114597312A (en) * | 2022-03-10 | 2022-06-07 | 南昌大学 | Perovskite solar cell with double electron transmission layers |
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| CN109378390A (en) * | 2018-09-12 | 2019-02-22 | 电子科技大学 | A method of manufacture p-i-n type perovskite solar battery |
| CN110112258A (en) * | 2019-05-23 | 2019-08-09 | 电子科技大学 | Perovskite solar battery and its manufacturing method |
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| CN109378390A (en) * | 2018-09-12 | 2019-02-22 | 电子科技大学 | A method of manufacture p-i-n type perovskite solar battery |
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