CN114573343A - 一种低温制备的高性能pzt改性压电陶瓷 - Google Patents
一种低温制备的高性能pzt改性压电陶瓷 Download PDFInfo
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Abstract
本发明公开了一种低温制备的高性能PZT改性压电陶瓷材料及其制备方法，该压电陶瓷的通式为Pb1‒ x ‒ y Li x Ca y Ta u [(Ni,Zn)1/3Nb2/3] v (Mg1/ 2W1/2) w (Ti,Zr)1‒u‒v‒w O3表示，0.1≤x≤0.5，0.1≤y≤0.5,0.1≤u≤0.9,0.01≤v≤0.10,0.01≤w≤0.10。采用固相反应法制备850~950°C低温烧结的PZT改性压电陶瓷粉体，再经过造粒，压片，排胶，烧结，烧银，极化等工艺制备陶瓷材料。结果表明，在850~950°C的烧结温度下制备得到了PZT改性陶瓷材料，其晶粒致密、晶粒均匀、结晶充分，液相烧结特征明显，压电性能大大提高。
Description
技术领域
本发明领域属于压电陶瓷材料领域，具体涉及一种低温制备的高性能PZT改性压电陶瓷。
背景技术
PZT是传统的压电陶瓷，具有良好的介电、铁电、压电、热释电等效应，其原料价格低廉，适于工厂化生产，对其改性可以得到适用于多种用途的陶瓷材料。多层压电陶瓷有交替陶瓷层和内部金属电极层。随着科学技术的高速发展，多层压电陶瓷得到了越来越广泛的研究，广泛应用于制动器、转换器、传感器。一般将Ag-Pd电极用于多层陶瓷的内电极，其共烧温度范围为920～980 °C，而纯Ag的内电极则要求不高于900 °C的烧结温度。传统PZT压电陶瓷在约1200 °C高温下烧结，因此内部电极不能在这么高的温度下使用纯Ag（熔点≈961 °C），而Ag-Pd电极层也会扩散到陶瓷层，导致陶瓷电学性能的恶化，从而影响多层器件的可靠性。
发明内容
本发明的目的在于针对现有技术的不足，本发明的第一个目的是提供一种低温制备的高性能PZT改性压电陶瓷材料配方，该压电陶瓷烧结温度低，并且兼具良好的压电性能；本发明的第二个目的是提供上述低温制备的高性能PZT改性压电陶瓷的制备方法，以降低PZT改性压电陶瓷的烧结温度，同时提高压电性能。
针对本发明的第一个发明目的，本发明提供一种低温制备的高性能PZT改性压电陶瓷，该压电陶瓷的化学通式为Pb1‒ x ‒ y Li x Ca y Ta u [(Ni,Zn)1/3Nb2/3] v (Mg1/2W1/2) w (Ti,Zr)1‒u‒v‒w O3表示，0.1≤x≤0.5，0.1≤y≤0.5, 0.1≤u≤0.9, 0.01≤v≤0.10, 0.01≤w≤0.10。
针对本发明的第二个发明目的，通过在PZT改性压电陶瓷中引入多种元素Ta、Li、Ca、Ni、Zn、W、Mg、Nb进入A或B位，在850～950 °C的烧结温度下，制备得到兼具良好压电性能的PZT改性压电陶瓷，具体工艺步骤如下：
(1) PZT改性陶瓷粉体的制备
按照通式Pb1‒ x ‒ y Li x Ca y Ta u [(Ni,Zn)1/3Nb2/3] v (Mg1/2W1/2) w (Ti,Zr)1‒u‒v‒w O3表示，0.1≤x≤0.5，0.1≤y≤0.5, 0.1≤u≤0.9, 0.01≤v≤0.10, 0.01≤w≤0.10，计算称量各原料，将各原料通过球磨破碎并混合均匀后，在750 ~850 °C下保温2~4 h，保温结束后冷却至室温并再次球磨破碎，得到PZT改性陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT改性陶瓷粉体中加入5~10 wt%的聚乙烯醇溶液进行造粒，然后将所得粒料压制成片，得到PZT改性陶瓷片；
(3) 排胶烧结
将步骤（2）所得PZT改性陶瓷片排胶后在850~950 °C下保温烧结2~4 h，得到烧结PZT改性压电陶瓷片；
(4)极化
将步骤（3）所得得到烧结PZT改性压电陶瓷圆片表面涂覆5~15 wt%的银浆后，在650~750 °C下保温烧结10~20 min，保温结束后冷却至室温，然后在硅油中进行极化，得到高性能PZT改性压电陶瓷。
上述方法中，步骤（1）中两次球磨的具体工艺优选为：以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以100~450 rmp的转速球磨10~24 h，球磨后进行干燥。所述干燥可以是在烤灯下烘烤2~3小时。
上述方法中， 将所得粒料压制成片的具体工艺优选为：在10~20 MPa的压力下压制成直径约为10~15 mm，厚度约为0.8~1.2 mm的高性能PZT改性压电陶瓷片。
上述方法中，步骤（2）中所述聚乙烯醇溶液的浓度为最好为5~10 wt%。
上述方法中，步骤(3)中排胶的具体工艺优选为：将步骤（2）所得PZT改性陶瓷片在450~550 °C下保温4~10 h。
上述方法中，步骤（4）中在硅油中进行极化的具体工艺为：在60~120 °C的硅油中，极化场强为2~5 kV/mm条件下保持电场强度15~30 min。
与现有技术相比，本发明具有以下有益效果：
1、本发明提供的高性能PZT改性压电陶瓷，烧结温度低，为850～950 °C并具有良好的压电性能，d 33高达640 pC/N，在室温下利用安捷伦4294A精密阻抗仪在1 kHz的频率下测得介电损耗不大于千分之三，且居里温度大于300 °C，如图3所示。
2、本发明提供的低温制备的高性能PZT改性压电陶瓷，其物相为纯钙钛矿相，如图1所示，加入的Ca、Li、Ta、Mg、W、Ni、Zn、Nb元素提高了烧结活性使晶粒致密均匀且生长充分，致密。
附图说明
图1是实施例1～6制备得到的压电陶瓷材料的X射线衍射（XRD）图谱。
图2是实施例1～6制备得到的压电陶瓷材料的压电性能图。
图3是实施例1～6制备得到的压电陶瓷材料的介电常数随温度的变化。
图4是实施例2制备得到的压电陶瓷材料的电声器件示意图。
具体实施方式
下面通过具体实施方式对本发明所述低温制备的高性能PZT改性压电陶瓷作进一步说明。
实施例1
(1) PZT改性陶瓷粉体的制备
按照通式Pb1‒ x ‒ y Li x Ca y Ta u [(Ni,Zn)1/3Nb2/3] v (Mg1/2W1/2) w (Ti,Zr)1‒u‒v‒w O3表示，（x=0.2, y=0.3, u=0.1, v=0.08, w=0.04）计算称量各原料，以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以100 rmp的转速球磨24 h，球磨后烤灯下烘烤2小时进行干燥得到混合粉料，将所得混合粉料在800 °C下保温3h，保温结束后冷却至室温并再次按照相同方法进行第二次球磨，球磨后烤灯下烘烤3小时进行干燥，得到PZT改性陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT改性陶瓷粉体中加入浓度为10 wt%的聚乙烯醇溶液进行造粒，然后在10 MPa的压力下压制成直径约为10mm，厚度约为1.2 mm的PZT改性压电陶瓷圆片；
(3) 排胶烧结
将步骤（2）所得PZT改性陶瓷片在550 °C下保温4 h进行排胶后，在850 °C下保温烧结4 h，得到烧结PZT改性压电陶瓷片；
(4) 极化
将步骤（3）所得烧结PZT改性压电陶瓷圆片表面涂覆10 wt%的银浆后，在650 °C下保温烧结20 min，保温结束后冷却至室温，然后在在60 °C的硅油中，极化场强为5 kV/mm条件下保持电场强度15 min进行极化，得到低温制备的高性能PZT改性压电陶瓷。
制得的低温制备的高性能PZT改性压电陶瓷的XRD图谱见图1，图1表明PZT压电陶瓷为纯钙钛矿相；采用中科院声学所的ZJ-3型准静态d 33仪，测得的压电系数的d 33见图3，为322 pC/N；利用安捷伦4980A精密阻抗仪连接温控炉测得介电常数随温度的变化，可从图4得到样品的居里温度为171 °C。
实施例2
(1) PZT改性陶瓷粉体的制备
按照通式按照通式Pb1‒ x ‒ y Li x Ca y Ta u [(Ni,Zn)1/3Nb2/3] v (Mg1/2W1/2) w (Ti,Zr)1‒u‒v‒w O3表示，（x=0.2, y=0.3, u=0.2, v=0.08, w=0.04）计算称量各原料，以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以450 rmp的转速球磨10 h，球磨后烤灯下烘烤3小时进行干燥得到混合粉料，将所得混合粉料在750 °C下保温4 h，保温结束后冷却至室温并再次按照相同方法进行第二次球磨，球磨后烤灯下烘烤3小时进行干燥，得到PZT改性陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT改性陶瓷粉体中加入浓度为8 wt%的聚乙烯醇溶液进行造粒，然后在20 MPa的压力下压制成直径约为14 mm，厚度约为0.9 mm的PZT改性压电陶瓷圆片；
(3) 排胶烧结
将步骤（2）所得PZT改性陶瓷片在550 °C下保温4 h进行排胶后，在900 °C下保温烧结3 h，得到烧结PZT改性压电陶瓷片；
(4) 极化
将步骤（3）所得烧结PZT改性压电陶瓷圆片表面涂覆12 wt%的银浆后，在700 °C下保温烧结10 min，保温结束后冷却至室温，然后在在60 °C的硅油中，极化场强为2 kV/mm条件下保持电场强度30 min进行极化，得到低温制备的高性能PZT改性压电陶瓷。
制得的低温制备的高性能PZT改性压电陶瓷的XRD图谱见图1，图1表明PZT压电陶瓷为纯钙钛矿相；采用中科院声学所的ZJ-3型准静态d 33仪，测得的压电系数的d 33见图3，为513 pC/N；利用安捷伦4980A精密阻抗仪连接温控炉测得介电常数随温度的变化，可从图4得到样品的居里温度为178 °C。
实施例3
(1) PZT改性陶瓷粉体的制备
按照通式Pb1‒ x ‒ y Li x Ca y Ta u [(Ni,Zn)1/3Nb2/3] v (Mg1/2W1/2) w (Ti,Zr)1‒u‒v‒w O3表示，（x=0.2, y=0.3, u=0.3, v=0.08, w=0.04）计算称量各原料，以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以300 rmp的转速球磨18 h，球磨后烤灯下烘烤3小时进行干燥得到混合粉料，将所得混合粉料在850 °C下保温2 h，保温结束后冷却至室温并再次按照相同方法进行第二次球磨，球磨后烤灯下烘烤2小时进行干燥，得到PZT改性陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT改性陶瓷粉体中加入浓度为10 wt%的聚乙烯醇溶液进行造粒，然后在15 MPa的压力下压制成直径约为13 mm，厚度约为1mm的PZT改性压电陶瓷圆片；
(3) 排胶烧结
将步骤（2）所得PZT改性陶瓷片在450 °C下保温10 h进行排胶后，在950 °C下保温烧结2h，得到烧结PZT改性压电陶瓷片；
(4) 极化
将步骤（3）所得烧结PZT改性压电陶瓷圆片表面涂覆5wt%的银浆后，在750 °C下保温烧结10 min，保温结束后冷却至室温，然后在在60 °C的硅油中，极化场强为4 kV/mm条件下保持电场强度16min进行极化，得到低温制备的高性能PZT改性压电陶瓷。
制得的低温制备的高性能PZT改性压电陶瓷的XRD图谱见图1，图1表明PZT压电陶瓷为纯钙钛矿相；采用中科院声学所的ZJ-3型准静态d 33仪，测得的压电系数的d 33见图3，为608 pC/N；利用安捷伦4980A精密阻抗仪连接温控炉测得介电常数随温度的变化，可从图4得到样品的居里温度为173 °C。其SEM图见图2，显示其晶粒尺寸均匀，晶粒间较为致密。
实施例4
(1) PZT改性陶瓷粉体的制备
按照通式Pb1‒ x ‒ y Li x Ca y Ta u [(Ni,Zn)1/3Nb2/3] v (Mg1/2W1/2) w (Ti,Zr)1‒u‒v‒w O3表示，（x=0.2, y=0.3, u=0.4, v=0.08, w=0.04）计算称量各原料，以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以200 rmp的转速球磨20 h，球磨后烤灯下烘烤3小时进行干燥得到混合粉料，将所得混合粉料在800 °C下保温3h，保温结束后冷却至室温并再次按照相同方法进行第二次球磨，球磨后烤灯下烘烤3小时进行干燥，得到PZT改性陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT改性陶瓷粉体中加入浓度为10 wt%的聚乙烯醇溶液进行造粒，然后在20 MPa的压力下压制成直径约为15 mm，厚度约为0.8mm的PZT改性压电陶瓷圆片；
(3) 排胶烧结
将步骤（2）所得PZT改性陶瓷片在500 °C下保温8 h进行排胶后，在900 °C下保温烧结4 h，得到烧结PZT改性压电陶瓷片；
(4) 极化
将步骤（3）所得烧结PZT改性压电陶瓷圆片表面涂覆15 wt%的银浆后，在650 °C下保温烧结15 min，保温结束后冷却至室温，然后在在60 °C的硅油中，极化场强为5 kV/mm条件下保持电场强度25 min进行极化，得到低温制备的高性能PZT改性压电陶瓷。
制得的低温制备的高性能PZT改性压电陶瓷的XRD图谱见图1，图1表明PZT压电陶瓷为纯钙钛矿相；采用中科院声学所的ZJ-3型准静态d 33仪，测得的压电系数的d 33见图3，为555 pC/N；利用安捷伦4980A精密阻抗仪连接温控炉测得介电常数随温度的变化，可从图4得到样品的居里温度为177 °C。
实施例5
(1) PZT改性陶瓷粉体的制备
按照通式Pb1‒ x ‒ y Li x Ca y Ta u [(Ni,Zn)1/3Nb2/3] v (Mg1/2W1/2) w (Ti,Zr)1‒u‒v‒w O3表示，（x=0.2, y=0.3, u=0.5, v=0.08, w=0.04）计算称量各原料，以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以400 rmp的转速球磨11 h，球磨后烤灯下烘烤2小时进行干燥得到混合粉料，将所得混合粉料在750°C下保温4 h，保温结束后冷却至室温并再次按照相同方法进行第二次球磨，球磨后烤灯下烘烤3小时进行干燥，得到PZT改性陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT改性陶瓷粉体中加入浓度为6 wt%的聚乙烯醇溶液进行造粒，然后在18 MPa的压力下压制成直径约为10 mm，厚度约为1.2 mm的PZT改性压电陶瓷圆片；
(3) 排胶烧结
将步骤（2）所得PZT改性陶瓷片在500 °C下保温7h进行排胶后，在900 °C下保温烧结4 h，得到烧结PZT改性压电陶瓷片；
(4) 极化
将步骤（3）所得烧结PZT改性压电陶瓷圆片表面涂覆10 wt%的银浆后，在750 °C下保温烧结12min，保温结束后冷却至室温，然后在在60 °C的硅油中，极化场强为3kV/mm条件下保持电场强度30 min进行极化，得到低温制备的高性能PZT改性压电陶瓷。
制得的低温制备的高性能PZT改性压电陶瓷的XRD图谱见图1，图1表明PZT压电陶瓷为纯钙钛矿相；采用中科院声学所的ZJ-3型准静态d 33仪，测得的压电系数的d 33见图3，为557pC/N；利用安捷伦4980A精密阻抗仪连接温控炉测得介电常数随温度的变化，可从图4得到样品的居里温度为175 °C。
实施例6
(1) PZT改性陶瓷粉体的制备
按照通式Pb1‒ x ‒ y Li x Ca y Ta u [(Ni,Zn)1/3Nb2/3] v (Mg1/2W1/2) w (Ti,Zr)1‒u‒v‒w O3表示，（x=0.2, y=0.3, u=0.6, v=0.08, w=0.04）计算称量各原料，以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以100 rmp的转速球磨24 h，球磨后烤灯下烘烤2小时进行干燥得到混合粉料，将所得混合粉料在800 °C下保温3h，保温结束后冷却至室温并再次按照相同方法进行第二次球磨，球磨后烤灯下烘烤3小时进行干燥，得到PZT改性陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT改性陶瓷粉体中加入浓度为10 wt%的聚乙烯醇溶液进行造粒，然后在10 MPa的压力下压制成直径约为10mm，厚度约为1.2 mm的PZT改性压电陶瓷圆片；
(3) 排胶烧结
将步骤（2）所得PZT改性陶瓷片在550 °C下保温4 h进行排胶后，在850 °C下保温烧结4 h，得到烧结PZT改性压电陶瓷片；
(4) 极化
将步骤（3）所得烧结PZT改性压电陶瓷圆片表面涂覆10 wt%的银浆后，在650 °C下保温烧结20 min，保温结束后冷却至室温，然后在在60 °C的硅油中，极化场强为5 kV/mm条件下保持电场强度15 min进行极化，得到低温制备的高性能PZT改性压电陶瓷。
制得的低温制备的高性能PZT改性压电陶瓷的XRD图谱见图1，图1表明PZT压电陶瓷为纯钙钛矿相；采用中科院声学所的ZJ-3型准静态d 33仪，测得的压电系数的d 33见图3，为509 pC/N；利用安捷伦4980A精密阻抗仪连接温控炉测得介电常数随温度的变化，可从图4得到样品的居里温度为179 °C。
实施例7
(1) PZT改性陶瓷粉体的制备
按照通式Pb1‒ x ‒ y Li x Ca y Ta u [(Ni,Zn)1/3Nb2/3] v (Mg1/2W1/2) w (Ti,Zr)1‒u‒v‒w O3表示，（x=0.2, y=0.3, u=0.7, v=0.08, w=0.04）计算称量各原料，以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以100 rmp的转速球磨24 h，球磨后烤灯下烘烤2小时进行干燥得到混合粉料，将所得混合粉料在800 °C下保温3h，保温结束后冷却至室温并再次按照相同方法进行第二次球磨，球磨后烤灯下烘烤3小时进行干燥，得到PZT改性陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT改性陶瓷粉体中加入浓度为10 wt%的聚乙烯醇溶液进行造粒，然后在10 MPa的压力下压制成直径约为10mm，厚度约为1.2 mm的PZT改性压电陶瓷圆片；
(3) 排胶烧结
将步骤（2）所得PZT改性陶瓷片在550 °C下保温4 h进行排胶后，在850 °C下保温烧结4 h，得到烧结PZT改性压电陶瓷片；
(4) 极化
将步骤（3）所得烧结PZT改性压电陶瓷圆片表面涂覆10 wt%的银浆后，在650 °C下保温烧结20 min，保温结束后冷却至室温，然后在在60 °C的硅油中，极化场强为5 kV/mm条件下保持电场强度15 min进行极化，得到低温制备的高性能PZT改性压电陶瓷。
实施例8
(1) PZT改性陶瓷粉体的制备
按照通式Pb1‒ x ‒ y Li x Ca y Ta u [(Ni,Zn)1/3Nb2/3] v (Mg1/2W1/2) w (Ti,Zr)1‒u‒v‒w O3表示，（x=0.2, y=0.3, u=0.8, v=0.08, w=0.04）计算称量各原料，以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以100 rmp的转速球磨24 h，球磨后烤灯下烘烤2小时进行干燥得到混合粉料，将所得混合粉料在800 °C下保温3h，保温结束后冷却至室温并再次按照相同方法进行第二次球磨，球磨后烤灯下烘烤3小时进行干燥，得到PZT改性陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT改性陶瓷粉体中加入浓度为10 wt%的聚乙烯醇溶液进行造粒，然后在10 MPa的压力下压制成直径约为10mm，厚度约为1.2 mm的PZT改性压电陶瓷圆片；
(3) 排胶烧结
将步骤（2）所得PZT改性陶瓷片在550 °C下保温4 h进行排胶后，在850 °C下保温烧结4 h，得到烧结PZT改性压电陶瓷片；
(4) 极化
将步骤（3）所得烧结PZT改性压电陶瓷圆片表面涂覆10 wt%的银浆后，在650 °C下保温烧结20 min，保温结束后冷却至室温，然后在在60 °C的硅油中，极化场强为5 kV/mm条件下保持电场强度15 min进行极化，得到低温制备的高性能PZT改性压电陶瓷
应用例1
将实施例6制备得到的低温制备的高性能PZT改性压电陶瓷材料制备成厚度0.2毫米，直径12毫米的圆片，加上电极、引线、膜片、外壳等做成电声器件，如图4所示。
Claims (10)
1.一种低温制备的高性能PZT改性压电陶瓷，其特征在于该压电陶瓷的化学通式为Pb1-x-yLixCayTau[(Ni,Zn)1/3Nb2/3]v(Mg1/2W1/2)w(Ti,Zr)1-u-v-wO3表示，0.1≤x≤0.5,0.1≤y≤0.5,0.1≤u≤0.9,0.01≤v≤0.10,0.01≤w≤0.10。
2.权利要求1所述温制备的高性能PZT改性压电陶瓷的制备方法，其特征在于工艺步骤如下：
(1)PZT改性陶瓷粉体的制备
按照通式Pb1-x-yLixCayTau[(Ni,Zn)1/3Nb2/3]v(Mg1/2W1/2)w(Ti,Zr)1-u-v-wO3表示，0.1≤x≤0.5,0.1≤y≤0.5,0.1≤u≤0.9,0.01≤v≤0.10,0.01≤w≤0.10，计算称量各原料，将各原料通过球磨破碎并混合均匀后，在750～850℃下保温2～4h，保温结束后冷却至室温并再次球磨破碎，得到PZT改性陶瓷粉体；
(2)造粒压片
向步骤(1)所得PZT改性陶瓷粉体中加入聚乙烯醇溶液进行造粒，然后将所得粒料压制成片，得到PZT改性陶瓷片；
(3)排胶烧结
将步骤(2)所得PZT改性陶瓷片排胶后在850～950℃下保温烧结2～4h，得到烧结PZT改性压电陶瓷片；
(4)极化
将步骤(3)所得烧结PZT改性压电陶瓷圆片表面涂覆5～15wt％的银浆后，在650～750℃下保温烧结10～20min，保温结束后冷却至室温，然后在硅油中进行极化，得到低温制备的高性能PZT改性压电陶瓷。
3.根据权利要求2所述低温制备的高性能PZT改性压电陶瓷的制备方法，其特征在于步骤(1)中两次球磨的具体工艺为：以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以100～450rmp的转速球磨10～24h，球磨后进行干燥。
4.根据权利要求3所述低温制备的高性能PZT改性压电陶瓷的制备方法，其特征在于所述干燥是在在烤灯下烘烤2～3小时。
5.根据权利要求2～4中任一权利要求所述低温制备的高性能PZT改性压电陶瓷的制备方法，其特征在于步骤(2)中将所得粒料压制成片的具体工艺为：在10～20MPa的压力下压制成直径约为10～15mm，厚度约为0.8～1.2mm的低温制备的高性能PZT改性压电陶瓷片。
6.根据权利要求2～4中任一权利要求所述低温制备的高性能PZT改性压电陶瓷的制备方法，其特征在于步骤(2)中所述聚乙烯醇溶液的浓度为5～10wt％。
7.根据权利要求2～4中任一权利要求所述低温制备的高性能PZT改性压电陶瓷的制备方法，其特征在于步骤(3)中排胶的具体工艺为：将步骤(2)所得PZT改性陶瓷片在450～550℃下保温4～10h。
8.根据权利要求5中任一权利要求所述低温制备的高性能PZT改性压电陶瓷的制备方法，其特征在于步骤(3)中排胶的具体工艺为：将步骤(2)所得PZT改性陶瓷片在450～550℃下保温4～10h。
9.根据权利要求2～4中任一权利要求所述低温制备的高性能PZT改性压电陶瓷的制备方法，其特征在于步骤(4)中在硅油中进行极化的具体工艺为：在50～120℃的硅油中，极化场强为2～5kV/mm条件下保持电场强度15～30min。
10.根据权利要求5中任一权利要求所述低温制备的高性能PZT改性压电陶瓷的制备方法，其特征在于步骤(4)中在硅油中进行极化的具体工艺为：在50～120℃的硅油中，极化场强为2～5kV/mm条件下保持电场强度15～30min。
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