CN115466117A - 一种低温制备的具有超高压电常数的pzt基压电陶瓷 - Google Patents

一种低温制备的具有超高压电常数的pzt基压电陶瓷 Download PDF

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CN115466117A
CN115466117A CN202110647731.5A CN202110647731A CN115466117A CN 115466117 A CN115466117 A CN 115466117A CN 202110647731 A CN202110647731 A CN 202110647731A CN 115466117 A CN115466117 A CN 115466117A
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pzt
piezoelectric ceramic
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刘洪�
蒲涛
朱建国
张文
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Sichuan University
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Abstract

本发明公开了一种低温制备的具有超高压电常数的PZT基压电陶瓷材料及其制备方法，该压电陶瓷的通式为Pb1‒x‒y‒v Li x Ca y [Ni1/3Nb2/3] u (Sm,Eu,Gd) v (Ti,Zr)1‒u O3表示，0≤x≤0.025，0≤y≤0.001,0.1≤u≤0.6,0.01≤v≤0.025。采用固相反应法制备750~850°C低温煅烧的PZT基压电陶瓷粉体，再经过造粒、压片、排胶、烧结、烧银、极化等工艺制备陶瓷材料。结果表明，在900~960°C的烧结温度下制备得到了PZT基压电陶瓷材料，其超高压电常数d 33=936 pC/N，晶粒均匀、晶粒致密、结晶充分。在低温（900~960°C）制备的条件下，得到了超高压电性能（d 33=936 pC/N）。

Description

一种低温制备的具有超高压电常数的PZT基压电陶瓷
技术领域
本发明领域属于压电陶瓷材料领域，具体涉及一种低温制备的具有超高压电常数的PZT基压电陶瓷。
背景技术
PZT基压电陶瓷因其优异的电学性能而得到了广泛的研究。超高d 33（>900 pC/N）的压电陶瓷可应用于压电加速度计、超声成像压电探头、压电能量捕获器等高灵敏度探测器或传感器、压电人体健康监测系统等。一般将Ag-Pd电极用于多层陶瓷的内电极，其共烧温度范围为900～960 °C。传统PZT压电陶瓷在约1200 °C高温下烧结，因此内部电极不能在这么高的温度下使用Ag-Pd电极，而纯Pd或Pt电极层也会扩散到陶瓷层，导致陶瓷电学性能的恶化，从而影响多层器件的可靠性。
发明内容
本发明的目的在于针对现有技术的不足，本发明的第一个目的是提供一种低温制备的具有超高压电常数的PZT基压电陶瓷材料配方，该压电陶瓷烧结温度低，并且兼具超高的压电性能；本发明的第二个目的是提供上述低温制备的超高压电常数的PZT基压电陶瓷的制备方法，以降低PZT基压电陶瓷的烧结温度，同时提高压电性能。
针对本发明的第一个发明目的，本发明提供一种低温制备的具有超高压电常数的PZT基压电陶瓷，该压电陶瓷的化学通式为Pb1‒x‒y‒v Li x Ca y [Ni1/3Nb2/3] u (Sm,Eu,Gd) v (Ti,Zr)1‒u O3表示，0≤x≤0.025，0≤y≤0.001, 0.1≤u≤0.6, 0.01≤v≤0.025。
针对本发明的第二个发明目的，通过在PZT基压电陶瓷中引入多种元素Li、Ca、Sm、Eu、Gd、Ni、Nb进入A或B位，在900～960 °C的烧结温度下，制备得到兼具超高压电性能的PZT基压电陶瓷，具体工艺步骤如下：
(1) PZT基陶瓷粉体的制备
按照通式Pb1‒x‒y‒v Li x Ca y [Ni1/3Nb2/3] u (Sm,Eu,Gd) v (Ti,Zr)1‒u O3表示，0≤x≤0.025，0≤y≤0.001, 0.1≤u≤0.6, 0.01≤v≤0.025，计算称量各原料，将各原料通过球磨破碎并混合均匀后，在750 ~850 °C下保温2~4 h，保温结束后冷却至室温并再次球磨破碎，得到PZT基陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT基陶瓷粉体中加入5~10 wt%的聚乙烯醇溶液进行造粒，然后将所得粒料压制成片，得到PZT基陶瓷片；
(3) 排胶烧结
将步骤（2）所得PZT基陶瓷片排胶后在900~960 °C下保温烧结2~4 h，得到烧结PZT基压电陶瓷片；
(4)极化
将步骤（3）所得得到烧结PZT基压电陶瓷圆片表面涂覆5~15 wt%的银浆后，在650~750 °C下保温烧结10~20 min，保温结束后冷却至室温，然后在硅油中进行极化，得到超高压电常数的PZT基压电陶瓷。
上述方法中，步骤（1）中两次球磨的具体工艺优选为：以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以100~450 rmp的转速球磨10~24 h，球磨后进行干燥。所述干燥可以是在烤灯下烘烤2~3小时。
上述方法中，将所得粒料压制成片的具体工艺优选为：在10~20 MPa的压力下压制成直径约为10~15 mm，厚度约为0.8~1.2 mm的超高压电常数的PZT基压电陶瓷片。
上述方法中，步骤（2）中所述聚乙烯醇溶液的浓度为最好为5~10 wt%。
上述方法中，步骤(3)中排胶的具体工艺优选为：将步骤（2）所得PZT基陶瓷片在450~550 °C下保温4~10 h。
上述方法中，步骤（4）中在硅油中进行极化的具体工艺为：在60~120 °C的硅油中，极化场强为2~5 kV/mm条件下保持电场强度15~30 min。
与现有技术相比，本发明具有以下有益效果：
1、本发明提供的超高压电常数的PZT基压电陶瓷，烧结温度低，为900～960 °C并具有良好的压电性能，d 33高达936 pC/N，在室温下利用安捷伦4294A精密阻抗仪在1 kHz的频率下测得介电损耗不大于千分之三，且居里温度大于110 °C，如图3所示。
2、本发明提供的低温制备的超高压电常数的PZT基压电陶瓷，其物相为纯钙钛矿相，如图1所示，加入的Li、Ca、Sm、Eu、Gd、Ni、Nb元素提高了烧结活性降低了烧结温度使晶粒致密均匀且生长充分，致密，并得到了超高的d 33。
附图说明
图1是实施例1～7制备得到的压电陶瓷材料的X射线衍射（XRD）图谱。
图2是实施例1～7制备得到的压电陶瓷材料的压电性能图。
图3是实施例1～7制备得到的压电陶瓷材料的介电常数随温度的变化。
图4是实施例5制备得到的压电陶瓷材料的电声器件示意图。
具体实施方式
下面通过具体实施方式对本发明所述低温制备的超高压电常数的PZT基压电陶瓷作进一步说明。
实施例1
(1) PZT基陶瓷粉体的制备
按照通式Pb1‒x‒y‒v Li x Ca y [Ni1/3Nb2/3] u (Sm,Eu,Gd) v (Ti,Zr)1‒u O3表示，0≤x≤0.025，0≤y≤0.001, 0.1≤u≤0.6, 0.01≤v≤0.025，（x=0, y=0, u=0.55, v=0.025）计算称量各原料，以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以100 rmp的转速球磨24 h，球磨后烤灯下烘烤2小时进行干燥得到混合粉料，将所得混合粉料在800 °C下保温3 h，保温结束后冷却至室温并再次按照相同方法进行第二次球磨，球磨后烤灯下烘烤3小时进行干燥，得到PZT基陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT基陶瓷粉体中加入浓度为10 wt%的聚乙烯醇溶液进行造粒，然后在10 MPa的压力下压制成直径约为10 mm，厚度约为1.2 mm的PZT基压电陶瓷圆片；
(3) 排胶烧结
将步骤（2）所得PZT基陶瓷片在550 °C下保温4 h进行排胶后，在960 °C下保温烧结3 h，得到烧结PZT基压电陶瓷片；
(4) 极化
将步骤（3）所得烧结PZT基压电陶瓷圆片表面涂覆10 wt%的银浆后，在650 °C下保温烧结20 min，保温结束后冷却至室温，然后在50 °C的硅油中，极化场强为3 kV/mm条件下保持电场强度15 min进行极化，得到低温制备的超高压电常数的PZT基压电陶瓷。
制得的低温制备的超高压电常数的PZT基压电陶瓷的XRD图谱见图1，图1表明PZT压电陶瓷为纯钙钛矿相；采用中科院声学所的ZJ-3型准静态d 33仪，测得的压电系数的d 33见图2，为252 pC/N；利用安捷伦4980A精密阻抗仪连接温控炉测得介电常数随温度的变化，可从图3得到样品的居里温度为112 °C。
实施例2
(1) PZT基陶瓷粉体的制备
按照通式按照通式Pb1‒x‒y‒v Li x Ca y [Ni1/3Nb2/3] u (Sm,Eu,Gd) v (Ti,Zr)1‒u O3表示，0≤x≤0.025，0≤y≤0.001, 0.1≤u≤0.6, 0.01≤v≤0.025表示，（x=0.014, y=0, u=0.55, v =0.025）计算称量各原料，以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以450 rmp的转速球磨10 h，球磨后烤灯下烘烤3小时进行干燥得到混合粉料，将所得混合粉料在750 °C下保温4 h，保温结束后冷却至室温并再次按照相同方法进行第二次球磨，球磨后烤灯下烘烤3小时进行干燥，得到PZT基陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT基陶瓷粉体中加入浓度为8 wt%的聚乙烯醇溶液进行造粒，然后在20 MPa的压力下压制成直径约为14 mm，厚度约为0.9 mm的PZT基压电陶瓷圆片；
(3) 排胶烧结
将步骤（2）所得PZT基陶瓷片在550 °C下保温4 h进行排胶后，在960 °C下保温烧结3 h，得到烧结PZT基压电陶瓷片；
(4) 极化
将步骤（3）所得烧结PZT基压电陶瓷圆片表面涂覆12 wt%的银浆后，在700 °C下保温烧结10 min，保温结束后冷却至室温，然后在120 °C的硅油中，极化场强为3 kV/mm条件下保持电场强度30 min进行极化，得到低温制备的超高压电常数的PZT基压电陶瓷。
制得的低温制备的超高压电常数的PZT基压电陶瓷的XRD图谱见图1，图1表明PZT压电陶瓷为纯钙钛矿相；采用中科院声学所的ZJ-3型准静态d 33仪，测得的压电系数的d 33见图2，为804 pC/N；利用安捷伦4980A精密阻抗仪连接温控炉测得介电常数随温度的变化，可从图3得到样品的居里温度为114 °C。
实施例3
(1) PZT基陶瓷粉体的制备
按照通式Pb1‒x‒y‒v Li x Ca y [Ni1/3Nb2/3] u (Sm,Eu,Gd) v (Ti,Zr)1‒u O3表示，0≤x≤0.025，0≤y≤0.001, 0.1≤u≤0.6, 0.01≤v≤0.025表示，（x=0.016, y=0, u=0.55, v=0.025）计算称量各原料，以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以300 rmp的转速球磨18 h，球磨后烤灯下烘烤3小时进行干燥得到混合粉料，将所得混合粉料在850 °C下保温2 h，保温结束后冷却至室温并再次按照相同方法进行第二次球磨，球磨后烤灯下烘烤2小时进行干燥，得到PZT基陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT基陶瓷粉体中加入浓度为10 wt%的聚乙烯醇溶液进行造粒，然后在15 MPa的压力下压制成直径约为13 mm，厚度约为1mm的PZT基压电陶瓷圆片；
(3) 排胶烧结
将步骤（2）所得PZT基陶瓷片在450 °C下保温10 h进行排胶后，在960 °C下保温烧结3 h，得到烧结PZT基压电陶瓷片；
(4) 极化
将步骤（3）所得烧结PZT基压电陶瓷圆片表面涂覆5wt%的银浆后，在750 °C下保温烧结10 min，保温结束后冷却至室温，然后在120 °C的硅油中，极化场强为3 kV/mm条件下保持电场强度16min进行极化，得到低温制备的超高压电常数的PZT基压电陶瓷。
制得的低温制备的超高压电常数的PZT基压电陶瓷的XRD图谱见图1，图1表明PZT压电陶瓷为纯钙钛矿相；采用中科院声学所的ZJ-3型准静态d 33仪，测得的压电系数的d 33见图2，为852 pC/N；利用安捷伦4980A精密阻抗仪连接温控炉测得介电常数随温度的变化，可从图3得到样品的居里温度为125 °C。
实施例4
(1) PZT基陶瓷粉体的制备
按照通式Pb1‒x‒y‒v Li x Ca y [Ni1/3Nb2/3] u (Sm,Eu,Gd) v (Ti,Zr)1‒u O3表示，0≤x≤0.025，0≤y≤0.001, 0.1≤u≤0.6, 0.01≤v≤0.025表示，（x=0.018, y=0, u=0.55, v=0.025）计算称量各原料，以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以200 rmp的转速球磨20 h，球磨后烤灯下烘烤3小时进行干燥得到混合粉料，将所得混合粉料在800 °C下保温3 h，保温结束后冷却至室温并再次按照相同方法进行第二次球磨，球磨后烤灯下烘烤3小时进行干燥，得到PZT基陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT基陶瓷粉体中加入浓度为10 wt%的聚乙烯醇溶液进行造粒，然后在20 MPa的压力下压制成直径约为15 mm，厚度约为0.8mm的PZT基压电陶瓷圆片；
(3) 排胶烧结
将步骤（2）所得PZT基陶瓷片在500 °C下保温8 h进行排胶后，在960 °C下保温烧结3 h，得到烧结PZT基压电陶瓷片；
(4) 极化
将步骤（3）所得烧结PZT基压电陶瓷圆片表面涂覆15 wt%的银浆后，在650 °C下保温烧结15 min，保温结束后冷却至室温，然后在120 °C的硅油中，极化场强为3 kV/mm条件下保持电场强度25 min进行极化，得到低温制备的超高压电常数的PZT基压电陶瓷。
制得的低温制备的超高压电常数的PZT基压电陶瓷的XRD图谱见图1，图1表明PZT压电陶瓷为纯钙钛矿相；采用中科院声学所的ZJ-3型准静态d 33仪，测得的压电系数的d 33见图2，为879 pC/N；利用安捷伦4980A精密阻抗仪连接温控炉测得介电常数随温度的变化，可从图3得到样品的居里温度为124 °C。
实施例5
(1) PZT基陶瓷粉体的制备
按照通式Pb1‒x‒y‒v Li x Ca y [Ni1/3Nb2/3] u (Sm,Eu,Gd) v (Ti,Zr)1‒u O3表示，0≤x≤0.025，0≤y≤0.001, 0.1≤u≤0.6, 0.01≤v≤0.025表示，（x=0.02, y=0, u=0.55, v=0.025）计算称量各原料，以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以400 rmp的转速球磨11 h，球磨后烤灯下烘烤2小时进行干燥得到混合粉料，将所得混合粉料在750°C下保温4 h，保温结束后冷却至室温并再次按照相同方法进行第二次球磨，球磨后烤灯下烘烤3小时进行干燥，得到PZT基陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT基陶瓷粉体中加入浓度为6 wt%的聚乙烯醇溶液进行造粒，然后在18 MPa的压力下压制成直径约为10 mm，厚度约为1.2 mm的PZT基压电陶瓷圆片；
(3) 排胶烧结
将步骤（2）所得PZT基陶瓷片在500 °C下保温7h进行排胶后，在960 °C下保温烧结3 h，得到烧结PZT基压电陶瓷片；
(4) 极化
将步骤（3）所得烧结PZT基压电陶瓷圆片表面涂覆10 wt%的银浆后，在750 °C下保温烧结12min，保温结束后冷却至室温，然后在120 °C的硅油中，极化场强为3 kV/mm条件下保持电场强度30 min进行极化，得到低温制备的超高压电常数的PZT基压电陶瓷。
制得的低温制备的超高压电常数的PZT基压电陶瓷的XRD图谱见图1，图1表明PZT压电陶瓷为纯钙钛矿相；采用中科院声学所的ZJ-3型准静态d 33仪，测得的压电系数的d 33见图2，为936 pC/N；利用安捷伦4980A精密阻抗仪连接温控炉测得介电常数随温度的变化，可从图3得到样品的居里温度为117 °C。
实施例6
(1) PZT基陶瓷粉体的制备
按照通式Pb1‒x‒y‒v Li x Ca y [Ni1/3Nb2/3] u (Sm,Eu,Gd) v (Ti,Zr)1‒u O3表示，0≤x≤0.025，0≤y≤0.001, 0.1≤u≤0.6, 0.01≤v≤0.025表示，（x=0.022, y=0, u=0.55, v=0.025）计算称量各原料，以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以100 rmp的转速球磨24 h，球磨后烤灯下烘烤2小时进行干燥得到混合粉料，将所得混合粉料在800 °C下保温3 h，保温结束后冷却至室温并再次按照相同方法进行第二次球磨，球磨后烤灯下烘烤3小时进行干燥，得到PZT基陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT基陶瓷粉体中加入浓度为10 wt%的聚乙烯醇溶液进行造粒，然后在10 MPa的压力下压制成直径约为10mm，厚度约为1.2 mm的PZT基压电陶瓷圆片；
(3) 排胶烧结
将步骤（2）所得PZT基陶瓷片在550 °C下保温4 h进行排胶后，在960 °C下保温烧结2 h，得到烧结PZT基压电陶瓷片；
(4) 极化
将步骤（3）所得烧结PZT基压电陶瓷圆片表面涂覆10 wt%的银浆后，在650 °C下保温烧结20 min，保温结束后冷却至室温，然后在120 °C的硅油中，极化场强为3 kV/mm条件下保持电场强度15 min进行极化，得到低温制备的超高压电常数的PZT基压电陶瓷。
制得的低温制备的超高压电常数的PZT基压电陶瓷的XRD图谱见图1，图1表明PZT压电陶瓷为纯钙钛矿相；采用中科院声学所的ZJ-3型准静态d 33仪，测得的压电系数的d 33见图2，为858 pC/N；利用安捷伦4980A精密阻抗仪连接温控炉测得介电常数随温度的变化，可从图3得到样品的居里温度为118 °C。
实施例7
(1) PZT基陶瓷粉体的制备
按照通式Pb1‒x‒y‒v Li x Ca y [Ni1/3Nb2/3] u (Sm,Eu,Gd) v (Ti,Zr)1‒u O3表示，0≤x≤0.025，0≤y≤0.001, 0.1≤u≤0.6, 0.01≤v≤0.025表示，（x=0.024, y=0, u=0.55, v=0.025）计算称量各原料，以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以100 rmp的转速球磨24 h，球磨后烤灯下烘烤2小时进行干燥得到混合粉料，将所得混合粉料在800 °C下保温3 h，保温结束后冷却至室温并再次按照相同方法进行第二次球磨，球磨后烤灯下烘烤3小时进行干燥，得到PZT基陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT基陶瓷粉体中加入浓度为10 wt%的聚乙烯醇溶液进行造粒，然后在10 MPa的压力下压制成直径约为10mm，厚度约为1.2 mm的PZT基压电陶瓷圆片；
(3) 排胶烧结
将步骤（2）所得PZT基陶瓷片在550 °C下保温4 h进行排胶后，在960 °C下保温烧结3 h，得到烧结PZT基压电陶瓷片；
(4) 极化
将步骤（3）所得烧结PZT基压电陶瓷圆片表面涂覆10 wt%的银浆后，在650 °C下保温烧结20 min，保温结束后冷却至室温，然后在120 °C的硅油中，极化场强为3 kV/mm条件下保持电场强度15 min进行极化，得到低温制备的超高压电常数的PZT基压电陶瓷。
制得的低温制备的超高压电常数的PZT基压电陶瓷的XRD图谱见图1，图1表明PZT压电陶瓷为纯钙钛矿相；采用中科院声学所的ZJ-3型准静态d 33仪，测得的压电系数的d 33见图2，为812 pC/N；利用安捷伦4980A精密阻抗仪连接温控炉测得介电常数随温度的变化，可从图3得到样品的居里温度为126 °C。
应用例1
将实施例4制备得到的低温制备的超高压电常数的PZT基压电陶瓷材料制备成直径35毫米的圆片，加上电极、引线、膜片等做成电声器件，如图4所示。

Claims (10)

1.一种低温制备的具有超高压电常数的PZT基压电陶瓷，其特征在于该压电陶瓷的化学通式为Pb1‒x‒y‒v Li x Ca y [Ni1/3Nb2/3] u (Sm,Eu,Gd) v (Ti,Zr)1‒u O3表示，0≤x≤0.025，0≤y≤0.001, 0.1≤u≤0.6, 0.01≤v≤0.025。
2.权利要求1所述低温制备的超高压电常数的PZT基压电陶瓷的电学性能，其特征在于低温制备得到超高压电常数：
在900~960 °C的烧结温度下制备得到了PZT基压电陶瓷材料，其超高（d 33>900 pC/N）的压电常数为d 33 =936 pC/N。
3.权利要求1所述低温制备的超高压电常数的PZT基压电陶瓷的制备方法，其特征在于工艺步骤如下：
(1)PZT基压电陶瓷粉体的制备
按照通式Pb1‒x‒y‒v Li x Ca y [Ni1/3Nb2/3] u (Sm,Eu,Gd) v (Ti,Zr)1‒u O3表示，0≤x≤0.025，0≤y≤0.001, 0.1≤u≤0.6, 0.01≤v≤0.025，计算称量各原料，将各原料通过球磨破碎并混合均匀后，在750 ~850 °C下保温2~4 h，保温结束后冷却至室温并再次球磨破碎，得到PZT基压电陶瓷粉体；
(2) 造粒压片
向步骤（1）所得PZT基压电陶瓷粉体中加入聚乙烯醇溶液进行造粒，然后将所得粒料压制成片，得到PZT基压电陶瓷片；
(3) 排胶烧结
将步骤（2）所得PZT基压电陶瓷片排胶后在900~960 °C下保温烧结2~4 h，得到烧结PZT改性压电陶瓷片；
(4) 极化
将步骤（3）所得烧结PZT改性压电陶瓷圆片表面涂覆5~15 wt%的银浆后，在650~750 °C下保温烧结10~20 min，保温结束后冷却至室温，然后在硅油中进行极化，得到低温制备的高性能PZT基压电陶瓷。
4.根据权利要求2所述低温制备的高性能PZT基压电陶瓷的电学性能，其特征在于目前的具有超高（d 33>900 pC/N）压电常数的压电陶瓷都是在超过1000 °C的烧结温度下制备的，权利要求2所述是在在900~960 °C的烧结温度下制备。
5.根据权利要求3所述低温制备的高性能PZT基压电陶瓷的制备方法，其特征在于步骤（1）中两次球磨的具体工艺为：以无水乙醇为分散介质，按照各原料总量与无水乙醇的质量比为1:1.5将各原料和无水乙醇加入球磨罐中，在行星球磨机上以100~450 rmp的转速球磨10~24 h，球磨后进行干燥。
6.根据权利要求3所述低温制备的高性能PZT基压电陶瓷的制备方法，其特征在于所述干燥是在在烤灯下烘烤2~3小时。
7.根据权利要求3中任一权利要求所述低温制备的高性能PZT基压电陶瓷的制备方法，其特征在于步骤（2）中将所得粒料压制成片的具体工艺为：在10~20 MPa的压力下压制成直径约为10~15 mm，厚度约为0.8~1.2 mm的低温制备的高性能PZT基压电陶瓷片。
8.根据权利要求3中任一权利要求所述低温制备的高性能PZT基压电陶瓷的制备方法，其特征在于步骤（2）中所述聚乙烯醇溶液的浓度为5~10 wt%。
9.根据权利要求3中任一权利要求所述低温制备的高性能PZT基压电陶瓷的制备方法，其特征在于步骤（3）中排胶的具体工艺为：将步骤（2）所得PZT基压电陶瓷片在450~550 °C下保温4~10 h。
10.根据权利要求3中任一权利要求所述低温制备的高性能PZT基压电陶瓷的制备方法，其特征在于步骤（4）中在硅油中进行极化的具体工艺为：在50~120 °C的硅油中，极化场强为2~5 kV/mm条件下保持电场强度15~30 min。
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