CN114552363B - Lithium niobate blocking voltage setting method of solid laser - Google Patents
Lithium niobate blocking voltage setting method of solid laser Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
Abstract
The application belongs to the technical field of solid lasers, and particularly relates to a lithium niobate blocking voltage setting method of a solid laser. The method comprises the steps of firstly finding out the blocking interval of lithium niobate crystal at normal temperature, high temperature and low temperature respectively, and then finding out the common interval of the normal temperature blocking interval, the high Wen Fengsuo interval and the low temperature blocking interval, wherein the minimum blocking voltage value of the common interval is expressed as V min Maximum blocking voltage value V max The method comprises the steps of carrying out a first treatment on the surface of the Calculating the intermediate value V= (V) of the minimum blocking voltage and the maximum blocking voltage of the common blocking interval max +V min ) And/2, setting V as a lithium niobate blocking voltage value of the laser. According to the method, the setting method of the blocking voltage of the lithium niobate is optimized, so that the qualification rate of the lithium niobate crystal can be improved and the use requirement of a laser can be met by changing the debugging setting method of the blocking voltage of the lithium niobate under the condition of the lithium niobate crystal with the same quality.
Description
Technical Field
The application belongs to the technical field of solid lasers, and particularly relates to a lithium niobate blocking voltage setting method of a solid laser.
Background
The electro-optic Q-switching technology is used as an important laser Q-switching technology for obtaining narrow pulse and high peak power, and the principle of the electro-optic Q-switching technology is that the electro-optic effect of a crystal is utilized to realize the abrupt change of loss in a resonant cavity of a laser, so that the control capability is stored and rapidly released in the cavity or a laser working substance. The most practical electro-optic crystal at present mainly comprises KDP, LN and the like, wherein the LN (lithium niobate crystal) electro-optic Q-switch has the advantages of difficult deliquescence, transverse modulation, lower half-wave voltage, easy electrode manufacturing and the like, is convenient to process, use and maintain, and is widely applied to medium-low power lasers.
The lithium niobate crystal adopts the same-component eutectic ratio instead of stoichiometric ratio, and grows by adopting a melt pulling method, and is limited by a growth method and equipment conditions, certain defects exist in the crystal, the optical uniformity of the lithium niobate crystal is difficult to reach a higher level, the temperature stability of the lithium niobate crystal serving as an electro-optical Q-switch is poor, light leakage is easy to occur at high and low temperatures, and the blocking function cannot be realized under the high and low temperature working environment, so that the laser cannot work normally.
At present, in the existing laser products, lithium niobate crystals are mainly used as Q-switching switches of the lithium niobate crystals, so that laser output is realized. The laser adopts a back-pressure Q-switching design, and a lithium niobate Q-switching switch is required to have good blocking performance. The current general Q-switched voltage setting method comprises the following steps:
(1) And at normal temperature, the laser detection card is optically faced to the laser emitting end, and the light spot is received at the light spot focal length position of the laser emitting end.
(2) The Q-switched crystal voltage knob on the power supply is regulated to regulate the Q-switched voltage to the low voltage direction until the laser just appears, and then the Q-switched crystal voltage knob is reversely regulated to a position which does not emit light as a minimum blocking voltage value V Nmin . Then the Q-switched crystal voltage is adjusted to the high voltage direction until the laser happens just, and then the laser is reversely fine-tuned to the position which does not emit light just as the maximum blocking voltage value V Nmax . The voltage interval between the minimum lockout value and the maximum lockout value is a lockout interval.
(3) Calculating the intermediate value of the minimum blocking voltage and the maximum blocking voltage at normal temperature
V N ＝(V Nmax +V Nmin )/2，V N The blocking voltage value of lithium niobate of the laser is set.
However, after the environmental suitability test, the laser device arranged in this way is found that in the high-low temperature experiment, the qualification rate of the Q-switched switch capable of achieving the use requirement is lower by only about 45% due to the temperature change characteristic of the blocking voltage. The qualification rate of the Q-switch is low, the production assembly progress of the whole laser can be directly influenced, and for unqualified crystals, the Q-switch is firstly assembled on the laser to carry out a blocking test, the laser needs to be disassembled after the unqualified crystals are found, and then the laser needs to be returned to a crystal supply unit from a laser assembly workshop to be processed, so that the labor and material resources and the time cost are further increased, the working efficiency is greatly reduced, the qualification rate of lithium niobate crystals is improved, the yield of the laser is improved, the production period and the production cost are reduced, and the method has great practical significance.
Disclosure of Invention
First, the technical problem to be solved
The application aims to solve the technical problems that: the present application is directed to the above-mentioned problems, and provides a method for setting a blocking voltage of lithium niobate in a solid-state laser.
(II) technical scheme
In order to solve the technical problems, the application provides a lithium niobate blocking voltage setting method of a solid laser, which comprises the steps of firstly finding out blocking sections of lithium niobate crystals at normal temperature, high temperature and low temperature respectively, and then finding out common sections of the normal temperature blocking section, the high Wen Fengsuo section and the low temperature blocking section, wherein the minimum blocking voltage value of the common sections is expressed as V min Maximum blocking voltage value V max ；
Calculating the intermediate value V= (V) of the minimum blocking voltage and the maximum blocking voltage of the common blocking interval max +V min ) And/2, setting V as a lithium niobate blocking voltage value of the laser.
Firstly, finding out a blocking interval of the lithium niobate crystal at normal temperature, and then, respectively finding out the blocking intervals of the lithium niobate crystal at high temperature and low temperature;
then finding out the common blocking interval range between the blocking intervals;
and taking the intermediate value of the voltage in the range of the common blocking interval, and setting the intermediate value as the blocking voltage value of the lithium niobate of the laser.
Wherein the method comprises the following steps:
step 1: at normal temperature, the laser detection card is optically faced to the laser emission end, and light spots are received at the focal length position of the light spots of the laser emission end;
step 2: the Q-switched crystal voltage knob on the power supply is regulated to regulate the Q-switched voltage to the low voltage direction until the laser just appears, and then the Q-switched crystal voltage knob is reversely fine-tuned to a position which just does not emit light to serve as a minimum blocking voltage value V Nmin The method comprises the steps of carrying out a first treatment on the surface of the Then the Q-switched crystal voltage is adjusted to the high voltage direction until the laser happens just, and then the laser is reversely fine-tuned to the position which does not emit light just as the maximum blocking voltage value V Nmax ；
Then the minimum blocking voltage value V Nmin To the maximum blocking voltage value V Nmax The voltage interval between the two is a normal temperature blocking interval;
step 3: placing the laser into a high-temperature box, preserving heat for one hour at high temperature, enabling a laser detection card to face a laser emission end in a photosensitive way, and receiving light spots at the focal length position of the light spots at the laser emission end;
step 4: the Q-switched crystal voltage knob on the power supply is regulated to regulate the Q-switched voltage to the low voltage direction until the laser just appears, and then the Q-switched crystal voltage knob is reversely fine-tuned to a position which just does not emit light to serve as a minimum blocking voltage value V Hmin The method comprises the steps of carrying out a first treatment on the surface of the Then the Q-switched crystal voltage is adjusted to the high voltage direction until the laser happens just, and then the laser is reversely fine-tuned to the position which does not emit light just as the maximum blocking voltage value V Hmax ；
Minimum lockout voltage value V Hmin To the maximum blocking voltage value V Hmax The voltage interval between the two is a high-temperature blocking interval;
step 5: the laser is placed into a low-temperature box, after the temperature is kept for one hour at low temperature, the laser detection card is optically faced to the emitting end of the laser, and the light spot is received at the focal length position of the light spot of the emitting end of the laser.
Step 6: the Q-switched crystal voltage knob on the power supply is regulated to regulate the Q-switched voltage to the low voltage direction until the laser just appears, and then the Q-switched crystal voltage knob is reversely fine-tuned to a position which just does not emit light to serve as a minimum blocking voltage value V Lmin The method comprises the steps of carrying out a first treatment on the surface of the Then the Q-switched crystal voltage is adjusted to the high voltage direction until the laser happens just, and then the laser is reversely fine-tuned to the position which does not emit light just as the maximum blocking voltage value V Lmax ；
Minimum lockout voltage value V Lmin To the maximum blocking voltage value V Lmax The voltage between the values is a low-temperature blocking interval;
step 7: finding out a common interval of the normal temperature blocking interval, the high temperature blocking interval and the low temperature blocking interval, wherein the minimum blocking voltage value of the common interval is expressed as V min Maximum blocking voltage value V max ；
Step 8: calculating the intermediate value of the minimum blocking voltage and the maximum blocking voltage of the common blocking interval
V＝(V max +V min )/2，
V is set to the lithium niobate blocking voltage value of the laser.
In the step 1, the room temperature is room temperature.
In the step 3, the specific conditions at the high temperature are: the temperature of the high-temperature box is set to be the highest temperature value of the temperature required by the working environment of the laser.
In the step 5, the low temperature is: the low temperature box temperature is set to the lowest temperature value of the laser operating environment required temperature.
The voltage setting method can avoid that the preset blocking voltage cannot meet the blocking requirement at high and low temperatures due to performance change of the crystal in high and low temperature environments.
(III) beneficial effects
Compared with the prior art, the application provides a lithium niobate blocking voltage setting method of a solid laser, which comprises the steps of firstly finding out the blocking interval of a lithium niobate crystal at normal temperature, and then respectively finding out the blocking intervals of the lithium niobate crystal at high temperature and low temperature. The common lockout interval range of their lockout intervals is found. Taking the intermediate value of the voltage of the common blocking interval, and setting the intermediate value as the lithium niobate blocking voltage value of the laser. The voltage setting method can avoid that the preset blocking voltage can not meet the blocking requirement at high and low temperatures due to performance change of the crystal in high and low temperature environments.
The lithium niobate blocking voltage value of the laser provided by the method can enable the lithium niobate crystal to meet the use requirement of the laser under the condition of the lithium niobate crystal with the same quality. According to statistics of actual production data of the inventor in 2020, 298 laser co-production in 2020 are provided with the blocking voltage according to the method, and after environmental suitability experimental tests, 296 qualified Q-switching switches required by use can be achieved, the qualification rate is 99.3%, and the production efficiency is greatly improved.
Detailed Description
To make the objects, contents, and advantages of the present application more apparent, the following detailed description of the present application will be given with reference to examples.
The material defect of the crystal is difficult to improve the quality due to the limitation of a manufacturing method and a process technology, but under the condition of the lithium niobate crystal with the same quality, the debugging setting method of the blocking voltage is changed, and the lithium niobate crystal can meet the use requirement of a laser. The method can simply and effectively reduce the production cost of laser adjustment and production period.
The application aims at the problems, optimizes the setting method of the blocking voltage of lithium niobate, and provides a simple setting method of the blocking voltage of lithium niobate of a solid laser. Under the condition of the lithium niobate crystal with the same quality, the application can ensure that the lithium niobate crystal meets the use requirement of a laser by only changing the debugging setting method of the blocking voltage of the lithium niobate crystal, thereby improving the qualification rate of the lithium niobate crystal.
The lithium niobate blocking voltage setting method of the solid laser of the application is based on the principle that the property change of lithium niobate crystal at normal temperature and low temperature respectively is considered. The laser can meet the use requirement of the laser even under high-temperature or low-temperature environment or after the temperature environment adaptability experiment is carried out and then the temperature is restored to normal temperature.
In order to solve the technical problems, the application provides a lithium niobate blocking voltage setting method of a solid laser, which comprises the steps of firstly finding out blocking sections of lithium niobate crystals at normal temperature, high temperature and low temperature respectively, and then finding out common sections of the normal temperature blocking section, the high Wen Fengsuo section and the low temperature blocking section, wherein the minimum blocking voltage value of the common sections is expressed as V min Maximum blocking voltage value V max ；
Calculating the intermediate value V= (V) of the minimum blocking voltage and the maximum blocking voltage of the common blocking interval max +V min ) And/2, setting V as a lithium niobate blocking voltage value of the laser.
Firstly, finding out a blocking interval of the lithium niobate crystal at normal temperature, and then, respectively finding out the blocking intervals of the lithium niobate crystal at high temperature and low temperature;
then finding out the common blocking interval range between the blocking intervals;
and taking the intermediate value of the voltage in the range of the common blocking interval, and setting the intermediate value as the blocking voltage value of the lithium niobate of the laser.
Wherein the method comprises the following steps:
step 1: at normal temperature, the laser detection card is optically faced to the laser emission end, and light spots are received at the focal length position of the light spots of the laser emission end;
step 2: the Q-switched crystal voltage knob on the power supply is regulated to regulate the Q-switched voltage to the low voltage direction until the laser just appears, and then the Q-switched crystal voltage knob is reversely fine-tuned to a position which just does not emit light to serve as a minimum blocking voltage value V Nmin The method comprises the steps of carrying out a first treatment on the surface of the Then the Q-switched crystal voltage is adjusted to the high voltage direction until the laser happens just, and then the laser is reversely fine-tuned to the position which does not emit light just as the maximum blocking voltage value V Nmax ；
Then the minimum blocking voltage value V Nmin To the maximum blocking voltage value V Nmax The voltage interval between the two is a normal temperature blocking interval;
step 3: placing the laser into a high-temperature box, preserving heat for one hour at high temperature, enabling a laser detection card to face a laser emission end in a photosensitive way, and receiving light spots at the focal length position of the light spots at the laser emission end;
step 4: the Q-switched crystal voltage knob on the power supply is regulated to regulate the Q-switched voltage to the low voltage direction until the laser just appears, and then the Q-switched crystal voltage knob is reversely fine-tuned to a position which just does not emit light to serve as a minimum blocking voltage value V Hmin The method comprises the steps of carrying out a first treatment on the surface of the Then the Q-switched crystal voltage is adjusted to the high voltage direction until the laser happens just, and then the laser is reversely fine-tuned to the position which does not emit light just as the maximum blocking voltage value V Hmax ；
Minimum lockout voltage value V Hmin To the maximum blocking voltage value V Hmax The voltage interval between the two is a high-temperature blocking interval;
step 5: the laser is placed into a low-temperature box, after the temperature is kept for one hour at low temperature, the laser detection card is optically faced to the emitting end of the laser, and the light spot is received at the focal length position of the light spot of the emitting end of the laser.
Step 6: the Q-switched crystal voltage knob on the power supply is regulated to regulate the Q-switched voltage to the low voltage direction until the laser just appears, and then the Q-switched crystal voltage knob is reversely fine-tuned to a position which just does not emit light to serve as a minimum blocking voltage value V Lmin The method comprises the steps of carrying out a first treatment on the surface of the Then the Q-switched crystal voltage is adjusted to the high voltage direction until the laser happens just, and then the laser is reversely fine-tuned to the position which does not emit light just as the maximum blocking voltage value V Lmax ；
Minimum lockout voltage value V Lmin To the maximum blocking voltage value V Lmax The voltage between the values is a low-temperature blocking interval;
step 7: finding out a common interval of the normal temperature blocking interval, the high temperature blocking interval and the low temperature blocking interval, wherein the minimum blocking voltage value of the common interval is expressed as V min Maximum blocking voltage value V max ；
Step 8: calculating the intermediate value of the minimum blocking voltage and the maximum blocking voltage of the common blocking interval
V＝(V max +V min )/2，
V is set to the lithium niobate blocking voltage value of the laser.
In the step 1, the room temperature is room temperature.
In the step 3, the specific conditions at the high temperature are: the temperature of the high-temperature box is set to be the highest temperature value of the temperature required by the working environment of the laser.
In the step 5, the low temperature is: the low temperature box temperature is set to the lowest temperature value of the laser operating environment required temperature.
The voltage setting method can avoid that the preset blocking voltage cannot meet the blocking requirement at high and low temperatures due to performance change of the crystal in high and low temperature environments.
The foregoing is merely a preferred embodiment of the present application, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present application, and such modifications and variations should also be regarded as being within the scope of the application.
Claims (8)
1. A method for setting the blocking voltage of lithium niobate for solid laser features that the blocking regions of lithium niobate crystal at ordinary temp, high temp and low temp are found out, and the common regions of ordinary temp blocking region, high Wen Fengsuo region and low temp blocking region are found out, where the minimum blocking voltage is V min Maximum blocking voltage value V max ；
Calculating the intermediate value V= (V) of the minimum blocking voltage and the maximum blocking voltage of the common blocking interval max +V min ) Setting V as a lithium niobate blocking voltage value of the laser;
wherein the room temperature is room temperature; the high temperature is as follows: the highest temperature value of the laser working environment required temperature; the low temperature is as follows: the laser operating environment requires a minimum temperature value for the temperature.
2. The method for setting a blocking voltage of lithium niobate of a solid state laser according to claim 1, wherein the method first finds a blocking section of a lithium niobate crystal at normal temperature, and then finds blocking sections thereof in a high temperature environment and a low temperature environment, respectively;
then finding out the common blocking interval range between the blocking intervals;
and taking the intermediate value of the voltage in the range of the common blocking interval, and setting the intermediate value as the blocking voltage value of the lithium niobate of the laser.
3. The method for setting a blocking voltage of lithium niobate of a solid state laser according to claim 1, comprising the steps of:
step 1: at normal temperature, the laser detection card is optically faced to the laser emission end, and light spots are received at the focal length position of the light spots of the laser emission end;
step 2: the Q-switched crystal voltage knob on the power supply is regulated to regulate the Q-switched voltage to the low voltage direction until the laser just appears, and then the Q-switched crystal voltage knob is reversely fine-tuned to a position which just does not emit light to serve as a minimum blocking voltage value V Nmin The method comprises the steps of carrying out a first treatment on the surface of the Then the Q-switched crystal voltage is adjusted to the high voltage direction until the laser happens just, and then the laser is reversely fine-tuned to the position which does not emit light just as the maximum blocking voltage value V Nmax ；
Then the minimum blocking voltage value V Nmin To the maximum blocking voltage value V Nmax The voltage interval between the two is a normal temperature blocking interval.
4. A method for setting a blocking voltage of lithium niobate of a solid state laser according to claim 3, further comprising the steps of:
step 3: placing the laser into a high-temperature box, preserving heat for one hour at high temperature, enabling a laser detection card to face a laser emission end in a photosensitive way, and receiving light spots at the focal length position of the light spots at the laser emission end;
step 4: the Q-switched crystal voltage knob on the power supply is regulated to regulate the Q-switched voltage to the low voltage direction until the laser just appears, and then the Q-switched crystal voltage knob is reversely fine-tuned to a position which just does not emit light to serve as a minimum blocking voltage value V Hmin The method comprises the steps of carrying out a first treatment on the surface of the Then the Q-switched crystal voltage is adjusted to the high voltage direction until the laser happens just, and then the laser is reversely fine-tuned to the position which does not emit light just as the maximum blocking voltage value V Hmax ；
Minimum lockout voltage value V Hmin To the maximum blocking voltage value V Hmax The voltage interval between the two is a high-temperature blocking interval.
5. The method for setting a blocking voltage of lithium niobate of a solid state laser according to claim 4, further comprising the steps of:
step 5: placing the laser into a low-temperature box, preserving heat for one hour at low temperature, enabling a laser detection card to face a laser emission end in a photosensitive way, and receiving light spots at the focal length position of the light spots at the laser emission end;
step 6: the Q-switched crystal voltage knob on the power supply is regulated to regulate the Q-switched voltage to the low voltage direction until the laser just appears, and then the Q-switched crystal voltage knob is reversely fine-tuned to a position which just does not emit light to serve as a minimum blocking voltage value V Lmin The method comprises the steps of carrying out a first treatment on the surface of the Then the Q-switched crystal voltage is increased to be highThe pressing direction is adjusted until the laser just appears, and then the position which is just not light-emitting is reversely fine-adjusted to be used as the maximum blocking voltage value V Lmax ；
Minimum lockout voltage value V Lmin To the maximum blocking voltage value V Lmax The voltage between the values is the low temperature lockout interval.
6. The method for setting a blocking voltage of lithium niobate for a solid state laser according to claim 3, wherein in the step 1, the room temperature is room temperature.
7. The method for setting a blocking voltage of lithium niobate of a solid state laser according to claim 4, wherein in the step 3, the method specifically comprises: the temperature of the high-temperature box is set to be the highest temperature value of the temperature required by the working environment of the laser.
8. The method for setting a blocking voltage of lithium niobate of a solid state laser according to claim 5, wherein in step 5, the low temperature is: the low temperature box temperature is set to the lowest temperature value of the laser operating environment required temperature.
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