CN204088872U - A kind of high-power semiconductor laser system - Google Patents
A kind of high-power semiconductor laser system Download PDFInfo
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- CN204088872U CN204088872U CN201420472146.1U CN201420472146U CN204088872U CN 204088872 U CN204088872 U CN 204088872U CN 201420472146 U CN201420472146 U CN 201420472146U CN 204088872 U CN204088872 U CN 204088872U
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Abstract
The utility model provides a kind of high-power semiconductor laser system, to improve the reliability of semiconductor laser, thus extends its useful life.This high-power semiconductor laser system, comprises semiconductor laser chip, and connect positive pole and negative pole after semiconductor laser chip encapsulation, described semiconductor laser chip is connected with current-voltage monitoring device, feedback circuit and power supply respectively by both positive and negative polarity.The utility model feedback circuit structure used is simple, can reduce semiconductor laser holistic cost; Greatly can improve the working life of semiconductor laser, avoid unnecessary loss.
Description
Technical field
The utility model relates to a kind of Laser Diode System, especially a kind of high-power semiconductor laser system.
Background technology
High-power semiconductor laser due to have volume little, lightweight, use electric drive, the advantage such as electro-optical efficiency is high, the life-span is long, be applied widely in fields such as industrial processes, military and national defense, medical treatment, all-solid state laser pumpings.The development trend of semiconductor laser is high power, high brightness and long-life.But the increase of semiconductor laser power can cause its junction temperature to increase, thus causes the isoparametric degeneration of power, spectrum, and causes reliability to reduce.Such as, be applied to the semiconductor laser of optical communication field, its power is usually in milliwatt magnitude, and corresponding working life can reach 100000 hours; And be applied to the semiconductor laser in the field such as industrial processes, military and national defense at present, single bar continuous wave output power can reach 100W, typical case's quasi c. w. power output reaches 300W, corresponding working life is generally only several thousand hours, can not meet the application in the fields such as industrial processes, Aero-Space, military and national defense, medical treatment far away.Therefore, reliability under semiconductor laser high-power operation pattern how is improved and the life-span has become the key issue that solution is needed in high-power semiconductor laser field badly.
Under high-power operation condition, the main cause that semiconductor laser lost efficacy is the surface damage of catastrophic optics cavity.As shown in Figure 1, along with the increase of semiconductor laser input current, junction temperature also increases thereupon, when junction temperature is increased to certain critical value time, namely the surface damage of catastrophic optics cavity can occur, cause semiconductor laser to lose efficacy.At present, it has been generally acknowledged that the surface damage of catastrophic optics cavity has two kinds of mechanism: internal feedback mechanism and external feedback mechanism.
Internal feedback mechanism: chip temperature of semiconductor lasers raises and causes semi-conducting material band gap Eg (T) change near face, chamber, corresponding inter-band absorption increases (corresponding to laser emission wavelength), cause the nonequilibrium carrier concentration near face, chamber to increase, cause chamber surface temperature to raise further.Said process can form positive feedback loop, finally causes thermal runaway (thermal runaway) phenomenon occurs, and makes chamber surface temperature exceed critical value, causes the surface damage of catastrophic optics cavity.
External feedback mechanism: chip temperature of semiconductor lasers raises and causes defect to be assembled and produce, defect gathering near face, chamber or in resonant cavity can cause the optical transition that defect is relevant to absorb increase, energy can be shifted to semiconductor lattice by defective bit, namely usually said non-radiative recombination phenomenon.Non-radiative recombination can cause junction temperature to raise further, namely defines an external feedback ring, thus causes the surface damage of catastrophic optics cavity.
Usually, the surface damage of catastrophic optics cavity is caused by internal feedback mechanism, the acting in conjunction of external feedback mechanism.In time scale, the surface damage of catastrophic optics cavity can be divided into three processes:
The first step: the chamber surface temperature of semiconductor laser is close to critical temperature, and for different films on cavity surfaces of semiconductor lasers surface states and condition of work, this process continues a few nanosecond at least, continues a few year at most.
Second step: thermal runaway phenomenon produces, and face, chamber temperatures at localized regions exceedes the fusing point of semi-conducting material, and face, chamber locally melting occurs.This process continues 1-10ns usually.
3rd step: thermal runaway phenomenon stops, if continue to apply operating current to semiconductor laser, can there is further degeneration in semiconductor laser, until complete failure.Usually blanking bar can be produced in this process.According to the difference of condition of work, the duration of this process is usually from a few microsecond to several milliseconds.
Based on above-mentioned theory, in order to avoid the surface damage of catastrophic optics cavity, need from improvement semiconductor laser outer layer growth technique on the one hand, reduce active area defect concentration to start with, need for existing semiconductor laser on the one hand in addition, by designing novel semiconductor laser operating circuit, in the temperature of semiconductor laser just beyond critical temperature, catastrophic damage changes the condition of work of semiconductor laser before not yet causing semiconductor laser complete failure, reduce active area temperature, raising reliability of semiconductor laser can be reached, the object increased the service life.
Summary of the invention
The utility model provides a kind of high-power semiconductor laser system, to improve the reliability of semiconductor laser, thus extends its useful life.
For realizing above utility model object, the utility model proposes following basic technical scheme:
This high-power semiconductor laser system, comprises semiconductor laser chip, connects positive pole and negative pole after semiconductor laser chip encapsulation, described semiconductor laser chip by both positive and negative polarity respectively with current-voltage monitoring device, feedback circuit and power sources in parallel; Described current-voltage monitoring device is for detecting the actual current/voltage at semiconductor laser chip two ends, and power supply is used for powering to semiconductor laser chip; Described feedback circuit is used in the time range of setting, control power supply and suspends or open.
Above-mentioned feedback circuit is the controller with I/O pulse signal.
Above-mentioned feedback circuit comprises time control unit, for make feedback circuit be less than in 1 microsecond time to power supply send feedback signal, power source of semiconductor laser is temporarily quit work; Described power source of semiconductor laser temporarily quit work to the time of setting, and feedback circuit applies signal again, makes power source of semiconductor laser restart work, drove semiconductor laser.
Above-mentioned semiconductor laser chip is fixedly installed on heat abstractor, and described heat abstractor is Conduction cooled refrigeration and heat radiator, liquid refrigerating radiator or TEC refrigeration and heat radiator.
Above-mentioned semiconductor laser chip is single-shot luminous point semiconductor laser chip or multiple luminous point semiconductor laser chip.
Above-mentioned power source of semiconductor laser is current source, comprises continuous current source, quasi-continuous current source and/or pulse current source etc.
The utility model has following advantage:
The utility model feedback circuit structure used is simple, can reduce Laser Diode System holistic cost; Greatly can improve the working life of semiconductor laser, avoid unnecessary loss.
Accompanying drawing explanation
Fig. 1 is catastrophic optics cavity surface damage schematic diagram;
Fig. 2 is described high-power semiconductor laser entire system schematic diagram;
Accompanying drawing is detailed as follows: 1-heat abstractor, 2-positive pole, 3-semiconductor laser chip, 4-negative pole, 5-power source of semiconductor laser, 6-current/voltage monitoring device, 7-feedback circuit.
Embodiment
Principle of the present utility model drawn based on catastrophic optics cavity surface damage theory, specifically according to catastrophic defect theory result of study, at the second stage of catastrophic optics cavity surface damage, namely thermal runaway produces the stage, films on cavity surfaces of semiconductor lasers temperatures at localized regions exceedes fusing point, face, chamber partial melting.Known according to formula (1), the threshold current Ith of semiconductor laser can vary with temperature and change.
I
th＝I
th0exp(T/T
0) (1)
Therefore, the current/voltage of semiconductor laser chip also can vary with temperature and produce a small change.By increasing a current-voltage monitoring device and feedback circuit in Laser Diode System, the voltage of current-voltage monitoring device Real-Time Monitoring semiconductor laser and current status, electric current and voltage as found semiconductor laser occur abnormal, illustrate that thermal runaway phenomenon may occur in semiconductor laser local, then in very short time, (be usually less than 1 microsecond) by feedback circuit and send a feedback signal to laser power supply, semiconductor laser is temporarily quit work, films on cavity surfaces of semiconductor lasers then can be avoided to degenerate further, thus avoid semiconductor laser complete failure.Again apply electric current at semiconductor laser in semiconductor laser break-off after several seconds, then semiconductor laser can be made to continue normal work, therefore significantly increase the useful life of semiconductor laser.
Based on above-mentioned theory analysis result, the structure of high-power semiconductor laser system described in the utility model is specifically: this high-power semiconductor laser system comprises semiconductor laser chip, and semiconductor laser chip is connected with current-voltage monitoring device, feedback circuit and power supply respectively.
The specific process of this high-power semiconductor laser system is as follows:
High-power semiconductor laser chip is encapsulated, by its with solder welding with heat sink on, and connect both positive and negative polarity; Semiconductor laser chip comprises single-shot luminous point semiconductor laser chip, multiple luminous point semiconductor laser chip etc.
High-power semiconductor laser after encapsulation is fixed on heat abstractor, as Conduction cooled refrigeration and heat radiator, liquid refrigerating radiator, TEC refrigerator etc.;
The semiconductor laser both positive and negative polarity of encapsulation is connected with the both positive and negative polarity of power supply respectively; Power supply is used for powering to semiconductor laser chip; Power source of semiconductor laser is current source, can comprise continuous current source, quasi-continuous current source, pulse current source etc.
The semiconductor laser both positive and negative polarity of encapsulation is connected with current-voltage monitoring device respectively; Current-voltage monitoring device is for detecting the actual current/voltage at semiconductor laser chip two ends;
Be connected with feedback circuit by current-voltage monitoring device, feedback circuit is also connected with power supply, and feedback circuit can transmit control signal to power supply.
Feedback circuit is one with the controller of I/O pulse signal, can accept the control signal that current-voltage monitoring device sends; Feedback circuit can be less than in 1 gsec to power supply send feedback signal, power source of semiconductor laser is temporarily quit work.After power source of semiconductor laser temporarily quits work a period of time, feedback circuit can apply signal again, makes power source of semiconductor laser restart work, drives semiconductor laser.
Feedback loop is formed between power supply and current-voltage monitoring device, power supply is connected with feedback circuit respectively with current/voltage monitoring system, when the signal measured by current-voltage monitoring device exceeds stationary value scope, then current-voltage monitoring device sends a pulse signal to feedback circuit, and feedback circuit sends a pulse signal to power supply.Power supply temporarily quits work after receiving this signal, thus semiconductor laser temporarily quits work.(be generally a few second) through after a while, feedback circuit sends a pulse signal to power supply again, makes power supply restart work, and corresponding laser is also started working.
In conjunction with said apparatus, its method of work is specially:
If the curtage signal measured by current-voltage monitoring device 6 exceeds reliable value, then current/voltage monitoring device can send a pulse signal to feedback circuit 7 being less than in 1 millisecond of time, feedback circuit 7 sends a feedback signal to power supply 5, after power supply 5 accepts this pulse signal, automatic temporary close power supply, power source of semiconductor laser is temporarily quit work, and corresponding semiconductor laser temporarily quits work, and avoids the further expansion that semiconductor laser chip COD damages.After power source of semiconductor laser temporarily quits work a period of time, feedback circuit 7 can apply signal again, makes power source of semiconductor laser restart work, drives semiconductor laser.
Claims (6)
1. a high-power semiconductor laser system, comprise semiconductor laser chip, connect positive pole and negative pole after semiconductor laser chip encapsulation, it is characterized in that: described semiconductor laser chip by both positive and negative polarity respectively with current-voltage monitoring device, feedback circuit and power sources in parallel; Described current-voltage monitoring device is for detecting the actual current/voltage at semiconductor laser chip two ends, and power supply is used for powering to semiconductor laser chip; Described feedback circuit is used in the time range of setting, control power supply and suspends or open.
2. high-power semiconductor laser system according to claim 1, is characterized in that: described feedback circuit is the controller with I/O pulse signal.
3. high-power semiconductor laser system according to claim 2, it is characterized in that: described feedback circuit comprises time control unit, for make feedback circuit be less than in 1 gsec to power supply send feedback signal, power source of semiconductor laser is temporarily quit work; Described power source of semiconductor laser temporarily quit work to the time of setting, and feedback circuit applies signal again, makes power source of semiconductor laser restart work, drove semiconductor laser.
4. according to the arbitrary described high-power semiconductor laser system of claims 1 to 3, it is characterized in that: described semiconductor laser chip is fixedly installed on heat abstractor, described heat abstractor is Conduction cooled refrigeration and heat radiator, liquid refrigerating radiator or TEC refrigeration and heat radiator.
5. high-power semiconductor laser system according to claim 4, is characterized in that: described semiconductor laser chip is single-shot luminous point semiconductor laser chip or multiple luminous point semiconductor laser chip.
6. high-power semiconductor laser system according to claim 5, is characterized in that: described power source of semiconductor laser is current source, comprises continuous current source, quasi-continuous current source and/or pulse current source.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420472146.1U CN204088872U (en) | 2014-08-20 | 2014-08-20 | A kind of high-power semiconductor laser system |
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| CN201420472146.1U CN204088872U (en) | 2014-08-20 | 2014-08-20 | A kind of high-power semiconductor laser system |
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| CN204088872U true CN204088872U (en) | 2015-01-07 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104184044A (en) * | 2014-08-20 | 2014-12-03 | 中国科学院西安光学精密机械研究所 | High-power semiconductor laser system and preparing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104184044A (en) * | 2014-08-20 | 2014-12-03 | 中国科学院西安光学精密机械研究所 | High-power semiconductor laser system and preparing method thereof |
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