CN111082668A - Inverter control method and drive controller - Google Patents

Inverter control method and drive controller Download PDF

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Publication number
CN111082668A
CN111082668A CN201811231539.2A CN201811231539A CN111082668A CN 111082668 A CN111082668 A CN 111082668A CN 201811231539 A CN201811231539 A CN 201811231539A CN 111082668 A CN111082668 A CN 111082668A
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nmos tube
driving
module
voltage
converter
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崔能伟
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Suzhou Yuante Semiconductor Technology Co ltd
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Suzhou Yuante Semiconductor Technology Co ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/337—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in push-pull configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/327—Means for protecting converters other than automatic disconnection against abnormal temperatures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The invention provides a converter control method and a drive controller, wherein a power tube of a converter is in three different working states under different detection conditions: hard switching state, soft switching state, stop switching state. A high-reliability overcurrent and short-circuit protection mode is provided; the advantage that the integrated circuit endows the converter with the required symmetry of a topological structure can be obtained, the high reliability of the converter is realized through reasonable design, and the converter can be recovered in time after a fault signal is cancelled, so that the risk that the power supply of a client is abnormal because the converter cannot be awakened in time in a protected false dead state is avoided; the method not only comprehensively and effectively protects the possible damage of the power converter due to abnormal states, but also provides required energy for the load end to the maximum extent and completes the essential tasks of the power converter.

Description

Inverter control method and drive controller
Technical Field
The invention belongs to the technical field of switching power supply converters, and particularly relates to a converter control method and a drive controller.
Background
As shown in fig. 1, the self-excited push-pull converter in the prior art is widely applied to the DCDC isolated converter of the micro-power module due to its characteristics of simple structure, high magnetic flux utilization rate and small size. Although the circuit has a simple and practical structure, the circuit has the obvious defects that: the self-protection capability is poor. The base electrode driving current of the triode is gradually increased along with the increase of the load, so that the triode enters an over-driving state to cause the current of a collector of the switch to reach a peak value, and the damage of a device is easily caused in the switching process. It is also easily damaged by overheating when the current or output is short-circuited.
In order to solve the above technical problems, patent publication No. CN102291001A provides a self-excited push-pull converter, as shown in fig. 2, a capacitor Cb or other two terminal networks with high-frequency and low-frequency passing electrical characteristics are used to replace a feedback resistor Rb in a self-excited push-pull converter circuit in the prior art shown in fig. 1, so that the self-excited push-pull converter has a good self-protection capability, and does not enter a vibration-stopping state during output overcurrent and short circuit, but enters a high-frequency self-excited operating state, so that a pair of triodes in push-pull operation can be ensured not to be burned out due to overheating during output overcurrent and short circuit of the converter, and can automatically recover to normal operation after the overcurrent and short circuit disappear. In the prior art, the short circuit is damaged in less than 3 seconds, and the improved product is normally tested after being subjected to short circuit and continuously working for 168 hours, so that the reliability of the product is greatly improved.
The self-excited push-pull converter illustrated in fig. 2, however, has an inherent drawback resulting from its inherent principle of operation self-excited, i.e. forming a switching power supply by its own drive forming a cyclic oscillation, which is spontaneous, not easily controllable and susceptible to device parameters. Moreover, the self-excitation push-pull converter is easy to cause higher abnormal rate of starting of magnetic biasing and one-time production due to the asymmetry of devices, so that the requirement on the consistency of a production process and the selected devices is high, and the requirements are determined by the inherent characteristics of self-excitation and cannot be changed, so that defective products can only be removed through testing and screening in actual production. Just because of the possible instability of the self-excited characteristics, it is advisable in applications requiring high reliability, such as in the automotive field.
With the rapid development of the integrated circuit industry, more and more process plants are involved in the research and development of the BCD process, and the internal resistance of the LDMOS device in the process is optimized to be very small, so that the power integration of the micro-power DCDC converter is very suitable for designing. This topology is particularly suitable for push-pull converters, where the problems encountered with self-excited push-pull converters as described above are perfectly solved by an integrated circuit design. Because the push-pull converter is designed by adopting an integrated circuit, the drive of the NMOS tube is carried out according to the sequential logic of the parameters of the internal oscillator, is not spontaneous and is stable and controllable. Moreover, although the parameters of the semiconductor device are affected by the process to have deviation, the parameters of two devices of the same type can be the same on the same chip, and the error of one thousandth or even one ten thousandth can be achieved, which is required by the push-pull topology, so that the symmetry of the push-pull converter can be greatly improved, and the magnetic biasing phenomenon caused by the deviation of the semiconductor device can not be avoided in the self-excitation push-pull converter. Meanwhile, overcurrent or output short-circuit protection can detect and sense the abnormal state through reasonable design of the chip, and protection is carried out according to requirements. Therefore, how to design a push-pull topology controller using integrated circuit technology to optimize performance and reliability is a technical problem that needs to be solved by those skilled in the art.
The patent publication CN106130355A provides a transistor driving control method and controller for a push-pull converter, which proposes to continuously detect that the conduction voltage drop of an NMOS transistor is greater than a set value, then stop driving to enter a sleep state, and resume the chip operation after the sleep state is finished. Although such a control method can well protect the chip from being damaged, it has a significant disadvantage that once the chip enters a sleep state of protection, the chip cannot be woken up, and even if the fault signal is cancelled, the chip can only be woken up automatically after the chip has been stopped, which is equivalent to that the chip is in an out-of-control state in the sleep state, and the push-pull switch converter cannot be used as a load end to supply power immediately after the fault signal is cancelled, which is not allowed in some system applications.
Disclosure of Invention
To solve the above technical problem, the present invention provides an inverter control method and a driving controller.
The invention adopts the following technical scheme:
in some alternative embodiments, there is provided a converter control method comprising: and judging whether the current value passing through the NMOS tube is larger than a set value, if so, enabling the NMOS tube driving module to be in a soft switching state, and otherwise, enabling the NMOS tube driving module to be in a hard switching state.
In some optional embodiments, the soft switching state refers to that when the NMOS transistor is turned on, the NMOS transistor driving module reduces driving voltage to make the NMOS transistor in an incomplete conduction state, so as to reduce current passing through the NMOS transistor; the hard switch state means that the NMOS tube driving module drives with a voltage meeting the requirement of complete conduction of the NMOS tube, and if the maximum voltage which can be provided by the NMOS tube driving module does not reach the voltage required by complete conduction of the NMOS tube, the NMOS tube driving module drives with the maximum voltage which can be provided by the NMOS tube driving module.
In some optional embodiments, the inverter control method further includes: judging whether the internal temperature of the controller is greater than a first temperature threshold value, and if the internal temperature of the controller is detected to be greater than the first temperature threshold value, enabling the NMOS tube to be in a stop switch state; and judging whether the internal temperature of the controller is smaller than a second temperature threshold value, and if the internal temperature of the controller is detected to be smaller than the second temperature threshold value, recovering the switch state of the NMOS tube.
In some optional embodiments, the stop switch state refers to that the NMOS transistor is in an off state.
In some optional embodiments, the method further comprises, before: and initializing the NMOS tube driving module to be in a soft switching state.
In some alternative embodiments, there is provided an inverter driving controller comprising: the overcurrent detection judging module is used for judging whether the current value passing through the NMOS tube is larger than a set value or not; the soft driving voltage generating module is used for providing soft driving voltage when the current value of the NMOS tube is larger than a set value, so that the NMOS tube driving module drives the NMOS tube in a soft switching state; and the hard drive voltage generation module is used for providing hard drive voltage when the current value of the NMOS tube is less than or equal to a set value, so that the NMOS tube drive module drives the NMOS tube in a hard switching state.
In some optional embodiments, the soft switching state refers to that when the NMOS transistor is turned on, the NMOS transistor driving module reduces driving voltage to make the NMOS transistor in an incomplete conduction state, thereby reducing current passing through the NMOS transistor; the hard switch state means that the NMOS tube driving module drives with a voltage meeting the requirement of complete conduction of the NMOS tube, and if the maximum voltage which can be provided by the NMOS tube driving module does not reach the voltage required by complete conduction of the NMOS tube, the NMOS tube driving module drives with the maximum voltage which can be provided by the NMOS tube driving module.
In some optional embodiments, the inverter driving controller further includes: the temperature detection and judgment module is used for judging whether the internal temperature of the controller is greater than a first temperature threshold value, if so, forbidding the driving time sequence generation module to generate a complementary control signal to enable the NMOS tube to be in a stop switch state, and is also used for judging whether the internal temperature of the controller is less than a second temperature threshold value, and if so, restoring the switch state of the NMOS tube; and the driving time sequence generating module is used for generating complementary control signals.
In some optional embodiments, the inverter driving controller further includes: and the voltage selection switch is used for selecting and outputting the driving voltage source according to the selection signal provided by the overcurrent detection judgment module.
In some optional embodiments, the inverter driving controller further includes: the PMOS tube and the PMOS tube driving module; the NMOS tube and the PMOS tube are simultaneously switched on to form two current loops, the directions of the two current loops are opposite, and the time sequences are complementary; and the PMOS tube driving module is used for driving the PMOS tube according to the complementary control signal generated by the driving time sequence generating module and a driving voltage source.
The invention has the following beneficial effects: the power tube of the converter is in three different working states under different detection conditions: the hard switching state, the soft switching state and the switch stopping state provide a high-reliability overcurrent and short-circuit protection mode; the advantage that the integrated circuit endows the converter with the required symmetry of a topological structure can be obtained, the high reliability of the converter is realized through reasonable design, and the converter can be recovered in time after a fault signal is cancelled, so that the risk that the power supply of a client is abnormal because the converter cannot be awakened in time in a protected false dead state is avoided; the method not only comprehensively and effectively protects the possible damage of the power converter due to abnormal states, but also provides required energy for the load end to the maximum extent and completes the essential tasks of the power converter.
For the purposes of the foregoing and related ends, the one or more embodiments include the features hereinafter fully described and particularly pointed out in the claims. The following description and the annexed drawings set forth in detail certain illustrative aspects and are indicative of but a few of the various ways in which the principles of the various embodiments may be employed. Other benefits and novel features will become apparent from the following detailed description when considered in conjunction with the drawings and the disclosed embodiments are intended to include all such aspects and their equivalents.
Drawings
FIG. 1 is a circuit schematic of a prior art self-excited push-pull converter;
FIG. 2 is a circuit schematic of a prior art improved self-excited push-pull converter;
FIG. 3 is a circuit diagram showing an application of a push-pull controller SN6501 by TI corporation;
FIG. 4 shows the drain waveform of the MOS transistor of the push-pull controller SN 6501;
FIG. 5 is a schematic flow chart of the present invention;
FIG. 6 is a circuit diagram of an application of the push-pull converter driving controller provided by the present invention;
fig. 7 is an applied circuit diagram of the full-bridge converter driving controller provided by the invention.
Detailed Description
The following description and the drawings sufficiently illustrate specific embodiments of the invention to enable those skilled in the art to practice them. Other embodiments may incorporate structural, logical, electrical, process, and other changes. The examples merely typify possible variations. Individual components and functions are optional unless explicitly required, and the sequence of operations may vary. Portions and features of some embodiments may be included in or substituted for those of others. The scope of embodiments of the invention encompasses the full ambit of the claims, as well as all available equivalents of the claims.
As shown in fig. 3, push-pull controller SN6501, oscillator OSC generates two complementary logic signals S and S through frequency divider freq
Figure BDA0001837274990000061
Then, two paths of complementary signals G with certain dead time are generated by a BBM Logic module2And G1. The complementary driving signals are generated by frequency division, so that the widths of the two signals are the same, the duty ratio is 50%, and therefore, the symmetry is extremely high, and the symmetry is independent of the parameters of the oscillator OSC, and only influences the oscillation period, namely the widths of the two signals. The high symmetry of the drive is just needed by the push-pull and full-bridge power supply topologies, and the parameters of the MOS transistor Q1 and the MOS transistor Q2 can meet the high consistency, so that the magnetic bias phenomenon of the power supply can be effectively reduced. The BBM Logic module enables two paths of signals to generate dead time, because the MOS transistor Q1 and the MOS transistor Q2 cannot be simultaneously switched on, after one MOS transistor is switched off, the other MOS transistor is switched on for a short time, as shown in fig. 4, tBBMIs the dead time of the drive.
The polarity of the voltage applied by the transformer when the MOS transistor Q1 is on is indicated in FIG. 3, and the primary current enters the winding N from VINP2And MOS transistor Q1 to ground, the secondary current from the secondary windingS1And forward biased diode D1 charges capacitor Co, and MOS transistor Q2 and diode D2 are in reverse biased cut-off state. When the MOS transistor Q2 is conducted, energy is transferred from VIn through the primary winding and the secondary winding of the transformer and then stored in the output capacitor C through the forward biased rectifier diode D2OIn the circuit, MOS transistor Q1 and MOS transistor Q2 are switched alternately and repeatedly, and energy is transmitted from primary side VIN to secondary side V of the isolation transformerOUTThe load side that needs to be isolated can obtain the required energy from there.
However, when overcurrent or output short-circuit, then VOUTLow voltage of voltage, applied to the secondary winding NS1Or NS2At a voltage of VOUT+VD1Or VOUT+VD2Is also smaller, VD1、VD2The voltage drop for the conduction of the diodes D1 and D2 is formed according to the voltage of the transformer windingProportional relation, primary winding NP1Or NP2The voltage drop between the two ends is also small, so that the voltage applied between the drain and the source of the MOS transistor Q1 and Q2 is large, and the MOS transistor Q1 and Q2 pass large current. That is, when the output voltage is less than the rated value, the output is powered by a large current, and the MOS transistor Q1 and the MOS transistor Q2 are easily damaged by a spike voltage or an excessive temperature during turn-off under the large current condition. If the output capacitance Co is larger, V is just startedOUTThere are also situations where the voltage is low for a longer time, resulting in an excessive start-up current, possibly even exceeding the maximum value that the power supply Vin can provide. Therefore, a reasonable control strategy is needed to effectively protect the power supply from being damaged under such severe conditions, and the power supply can be quickly recovered to be normally operated as a load end to supply power after the abnormal conditions are eliminated, so that the time sequence abnormality of the client system caused by overlarge time delay is avoided.
As shown in fig. 5, in some illustrative embodiments, a method for controlling a converter is provided, in which a power tube of the converter is in three different operating states under different detection conditions: hard switching state, soft switching state, stop switching state.
The inverter control method of the present invention includes:
101: and initializing the NMOS tube driving module to be in a soft switching state.
Before the controller turns on the NMOS tube, the over-current state can not be detected, so that whether the output is over-current or short circuit can not be known, and the NMOS tube is initialized to a soft switching state to avoid overlarge current once the NMOS tube is turned on.
Because the voltage on the output capacitor is not established and is still relatively small, the output is charged with a limited current at the moment, and the time in the working state is determined by the output capacitor, the load and the charging current. Until the output voltage is established, it is detected that the NMOS tube is not over-current, and at the moment, the NMOS tube enters a hard switching state, and as long as the condition is not changed, the power converter is always in the hard switching state.
102: the two NMOS tubes are sequentially switched in a crossed manner under complementary control signals, namely, the two NMOS tubes meet the switching time sequence of the converter in a switching state.
103: and detecting the internal temperature of the controller in real time, namely detecting the temperature of the working environment of the NMOS tube in real time.
104: and judging whether the current value passing through the NMOS tube is larger than a set value, if so, performing a step 105, and otherwise, performing a step 106.
Once the abnormal condition of load overcurrent or short circuit occurs, the overcurrent is detected, the controller enters a soft switching state immediately, the power converter is effectively protected in time, the damage of devices is avoided, and the controller is always in the soft switching state if the abnormal condition exists all the time. When the abnormal condition is cancelled, the output voltage returns to the normal value, the NMOS tube is detected to be not overcurrent again, and the hard switch state is recovered in time.
105: and (3) enabling the NMOS tube driving module to be in a soft switching state, namely when the current value passing through the NMOS tube is detected to be larger than a set value, driving the NMOS tube to be in the soft switching state.
The soft switching state means that when the NMOS tube is switched on, the drive voltage of the NMOS tube drive module is reduced to enable the NMOS tube to be in an incomplete conduction state, and therefore the current passing through the NMOS tube is reduced. Namely, the NMOS tube driving module can provide larger driving voltage, but the driving voltage is purposely reduced in order to reduce the current passing through the NMOS tube.
106: and (3) enabling the NMOS tube driving module to be in a hard switching state, namely when the current value passing through the NMOS tube is detected to be less than or equal to a set value, driving the NMOS tube to be in the hard switching state.
The hard switch state means that the NMOS tube driving module drives with the voltage meeting the requirement of the complete conduction of the NMOS tube, and if the maximum voltage which can be provided by the NMOS tube driving module does not reach the voltage required by the complete conduction of the NMOS tube, the NMOS tube driving module drives with the maximum voltage which can be provided by the NMOS tube driving module. That is, the driving voltage when the NMOS transistor is turned on satisfies the voltage value of full driving required by the NMOS transistor to the maximum extent, so that the on-resistance is small.
107: and judging whether the internal temperature of the controller is greater than a first temperature threshold value, if so, performing step 108, otherwise, returning to step 103.
If the ambient temperature is high and the controller is continuously operated in the soft switching state, there is a possibility of over-temperature due to heat generation, so it is necessary to enter into over-temperature protection to stop the switching of the NMOS transistor. And once the temperature returns to normal, the switch state is entered again, and the smaller the return difference of the temperature protection is, the smaller the over-temperature protection time is.
108: and enabling the NMOS transistors to be in a stop switch state, namely when the temperature inside the chip is detected to be greater than a set first temperature threshold value T2, enabling all the NMOS transistors to be in the stop switch state, and not starting the NMOS transistors.
The stop switch state means that the NMOS transistor is in a closed state, so that the converter cannot transmit energy.
109: and judging whether the internal temperature of the controller is smaller than a second temperature threshold, if so, performing step 102, namely when the internal temperature of the detection chip is smaller than a set second temperature threshold T1, recovering to a normal switching state again, and then judging whether the NMOS tube works in a hard switching state or a soft switching state according to the detected current value, otherwise, returning to step 103.
Wherein the set first temperature threshold T2 is larger than or equal to the second temperature threshold T1.
As shown in fig. 6, in some illustrative embodiments, there is provided a converter driving controller having a function of a push-pull converter, which can control the push-pull converter, including: the device comprises an NMOS tube Q1, an NMOS tube Q2, a driving time sequence generation module, a temperature detection judgment module, an overcurrent detection judgment module, a soft driving voltage generation module, a hard driving voltage generation module, a voltage selection switch and an NMOS tube driving module.
The NMOS tube driving module comprises a first power N tube driving module and a second power N tube driving module which respectively correspond to the NMOS tube Q1 and the NMOS tube Q2.
The NMOS transistor Q1 is an N-channel semiconductor power switch tube in the converter, is arranged in the controller, and the grid electrode of the NMOS transistor Q1 is connected with the first power N transistor driving module.
The NMOS transistor Q2 is another N-channel semiconductor power switch of the converter, is built in the controller, and has the same size as the NMOS transistor Q1.
The driving timing generation module is configured to generate complementary control signals, that is, two complementary control signals are generated and used as driving control signals of the NMOS transistor Q1 and the NMOS transistor Q2, respectively.
The first power N tube driving module is used for driving the NMOS tube Q1 according to the driving time sequence generation module and the driving voltage source and receiving the driving time sequence of the driving time sequence generation module.
And the second power N tube driving module is used for driving the NMOS tube Q2 according to the driving time sequence generating module and the driving voltage source and receiving the driving time sequence of the driving time sequence generating module.
And the overcurrent detection judging module is used for judging whether the current value passing through the NMOS tube is larger than a set value, namely detecting the conduction current of the NMOS tube Q1 and the NMOS tube Q2, judging whether the current value is larger than the set value, and outputting two paths of complementary voltage source selection signals. The overcurrent detection judging module is respectively connected with the drains of the NMOS tube Q1 and the NMOS tube Q2, the on-resistance of the NMOS tube is used as a sensing medium of current, a common method for sensing by using a sampling resistor is also used, and for the conduction loss of the NMOS tube, the resistor is generally a metal routing resistor of the source electrode of the power tube, and the resistor is inherent and is not additionally added.
And the soft driving voltage generation module is used for providing a lower voltage source than the hard driving voltage generation module so as to limit the current passing through the power device, namely, when the current values of the NMOS transistor Q1 and the NMOS transistor Q2 are greater than a set value, the soft driving voltage is provided, so that the first power N transistor driving module drives the NMOS transistor Q1 in a soft switching state, and the second power N transistor driving module drives the NMOS transistor Q2 in a soft switching state.
The hard driving voltage generating module generates a voltage source meeting the requirement of fully conducting the power transistor device with the maximum capability, namely, when the current value of the NMOS transistor is less than or equal to a set value, the hard driving voltage is provided, so that the first power N transistor driving module drives the NMOS transistor Q1 in a hard switching state, and the second power N transistor driving module drives the NMOS transistor Q2 in a hard switching state.
And the temperature detection judging module is used for judging whether the internal temperature of the controller is greater than a first temperature threshold value, if so, forbidding the driving time sequence generating module to generate a complementary control signal, so that the NMOS tube Q1 and the NMOS tube Q2 are in a switch stop state, and is used for judging whether the internal temperature of the controller is less than a second temperature threshold value, and if so, restoring the switch states of the NMOS tube Q1 and the NMOS tube Q2, namely, two NMOS tubes are sequentially switched in a crossed manner under the complementary control signal. The temperature detection judging module is connected with the driving time sequence generating module to realize an over-temperature protection function, and when the temperature exceeds a working range, the driving time sequence generating circuit stops providing a driving time sequence for the NMOS tube driving module.
And the voltage selection switch is used for selecting and outputting the driving voltage source according to the selection signal provided by the overcurrent detection judgment module. If the conduction current of the NMOS tube exceeds a set value, the voltage source provided by the soft drive voltage generation module is selected, and the voltage source provided by the hard drive voltage generation module is turned off, otherwise, the voltage source provided by the hard drive voltage generation module is selected to be output, and the voltage source provided by the soft drive voltage generation module is turned off. The voltage selection switch is connected with the overcurrent detection judging module, a driving voltage source is selected, output signals of the overcurrent detection judging module are complementary, the hard driving voltage source is cut off when the soft driving voltage source is selected, and otherwise, the soft driving voltage source is cut off.
The soft switching state means that when the NMOS transistor Q1 and the NMOS transistor Q2 are turned on, the first power N-transistor driving module and the second power N-transistor driving module reduce the driving voltage to make the NMOS transistor Q1 and the NMOS transistor Q2 in an incomplete conduction state, so that the current passing through the NMOS transistor Q1 and the NMOS transistor Q2 is reduced.
The hard switch state is that the first power N-tube driving module and the second power N-tube driving module are driven by the voltage which meets the requirement that the NMOS tube Q1 and the NMOS tube Q2 are completely conducted, and if the maximum voltage which can be provided by the first power N-tube driving module and the second power N-tube driving module does not reach the voltage which is required by the complete conduction of the NMOS tube Q1 and the NMOS tube Q2, the first power N-tube driving module and the second power N-tube driving module are driven by the maximum voltage which can be provided by the first power N-tube driving module and the second power N-tube driving module.
The off state indicates that the NMOS transistor Q1 and the NMOS transistor Q2 are in the off state.
As shown in fig. 7, in some illustrative embodiments, there is provided an inverter driving controller further comprising: the PMOS tube driving module is used for driving the PMOS tube according to the complementary control signal generated by the driving time sequence generating module and the driving voltage source, has the function of a full-bridge converter and can control the full-bridge converter.
The PMOS tube includes: PMOS pipe P1, PMOS pipe P2, PMOS pipe drive module include: the first power P tube driving module and the second power P tube driving module respectively correspond to the PMOS tube P1 and the PMOS tube P2.
The NMOS transistor Q1 and the PMOS transistor P1 are simultaneously turned on to form a first current loop, and the NMOS transistor Q2 and the PMOS transistor P2 are simultaneously turned on to form a second current loop, wherein the current loop is formed from the positive input power supply end of the converter, through the transformer winding and the simultaneously turned-on NMOS and PMOS transistors, to the negative input power supply end of the converter.
The first current loop and the second current loop are opposite in direction and complementary in timing.
The first power P tube driving module and the second power P tube driving module receive the driving control signal sent by the driving time sequence generating module, and when the driving time sequence generating module sends a starting signal, the NMOS tube Q1 and the PMOS tube P1 are both started. The primary side of the full-bridge converter is provided with only one winding, so that the design of the converter is simplified, and the design is realized at the cost of adding two power tubes and a driving circuit thereof to the full-bridge controller:
when a port of the driving timing generation module sends an on signal, the NMOS transistor Q1 and the PMOS transistor P1 are turned on, so that a current loop shown by a thick line in fig. 7, that is, a primary loop of the converter is formed, and a current starts from the positive terminal Vin of the input power supply, flows out from the diode D2 after passing through the PMOS transistor P1, flows into the dotted terminal from the dotted terminal of the primary side winding of the transformer, flows out from the diode D1 into the drain of the NMOS transistor Q1, and flows into the negative terminal of the power supply after passing through the NMOS transistor Q1. Secondary circuit of converter, current passes through secondary winding N of transformerS2And forward biased diode CR2 supplies the output capacitor Co and the load terminal.
Similarly, when the other port of the driving timing generation module sends an on signal, the NMOS transistor Q2 and the PMOS transistor P2 are connected to form a current loop of the transformer main winding with opposite current direction, i.e. the primary loop of the converter, and the current flows from the positive terminal Vin of the input power supply, flows out from the diode D1 after passing through the PMOS transistor P2, flows into the different-name terminal from the same-name terminal of the transformer main winding, flows into the drain of the NMOS transistor Q2 from the diode D2, and flows into the negative terminal of the power supply after passing through the NMOS transistor Q2. Secondary circuit of converter, current passes through secondary winding N of transformerS1And forward biased diode CR1 supplies the output capacitor Co and the load terminal.
Through the selective control of the PMOS tube P1 and the PMOS tube P2, two different and opposite driving of the primary side winding of the transformer are realized, energy is transmitted to the secondary side in an isolation mode, the connection relation and the detection and protection control of other parts are the same as those of a push-pull controller, and the details are omitted.
Those of skill would further appreciate that the various illustrative logical blocks, modules, circuits, and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both. To clearly illustrate this interchangeability of hardware and software, various illustrative components, blocks, modules, circuits, and steps have been described above generally in terms of their functionality. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the overall system. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present disclosure.

Claims (10)

1. A converter control method, characterized by comprising:
and judging whether the current value passing through the NMOS tube is larger than a set value, if so, enabling the NMOS tube driving module to be in a soft switching state, and otherwise, enabling the NMOS tube driving module to be in a hard switching state.
2. The converter control method according to claim 1,
the soft switching state means that when the NMOS tube is switched on, the drive voltage of the NMOS tube drive module is reduced to enable the NMOS tube to be in an incomplete conduction state, so that the current passing through the NMOS tube is reduced;
the hard switch state means that the NMOS tube driving module drives with a voltage meeting the requirement of complete conduction of the NMOS tube, and if the maximum voltage which can be provided by the NMOS tube driving module does not reach the voltage required by complete conduction of the NMOS tube, the NMOS tube driving module drives with the maximum voltage which can be provided by the NMOS tube driving module.
3. The converter control method according to claim 2, further comprising:
judging whether the internal temperature of the controller is greater than a first temperature threshold value, and if the internal temperature of the controller is detected to be greater than the first temperature threshold value, enabling the NMOS tube to be in a stop switch state;
and judging whether the internal temperature of the controller is smaller than a second temperature threshold value, and if the internal temperature of the controller is detected to be smaller than the second temperature threshold value, recovering the switch state of the NMOS tube.
4. The converter control method according to claim 3, wherein the stop switch state is that the NMOS transistor is in an off state.
5. The converter control method of claim 4, further comprising, prior to the method: and initializing the NMOS tube driving module to be in a soft switching state.
6. An inverter drive controller, comprising:
the overcurrent detection judging module is used for judging whether the current value passing through the NMOS tube is larger than a set value or not;
the soft driving voltage generating module is used for providing soft driving voltage when the current value of the NMOS tube is larger than a set value, so that the NMOS tube driving module drives the NMOS tube in a soft switching state;
and the hard drive voltage generation module is used for providing hard drive voltage when the current value of the NMOS tube is less than or equal to a set value, so that the NMOS tube drive module drives the NMOS tube in a hard switching state.
7. The inverter drive controller according to claim 6,
the soft switching state means that when the NMOS tube is switched on, the NMOS tube driving module reduces driving voltage to enable the NMOS tube to be in an incomplete conduction state, so that current passing through the NMOS tube is reduced;
the hard switch state means that the NMOS tube driving module drives with a voltage meeting the requirement of complete conduction of the NMOS tube, and if the maximum voltage which can be provided by the NMOS tube driving module does not reach the voltage required by complete conduction of the NMOS tube, the NMOS tube driving module drives with the maximum voltage which can be provided by the NMOS tube driving module.
8. The inverter drive controller according to claim 7, further comprising:
the temperature detection and judgment module is used for judging whether the internal temperature of the controller is greater than a first temperature threshold value, if so, forbidding the driving time sequence generation module to generate a complementary control signal to enable the NMOS tube to be in a stop switch state, and is also used for judging whether the internal temperature of the controller is less than a second temperature threshold value, and if so, restoring the switch state of the NMOS tube;
and the driving time sequence generating module is used for generating complementary control signals.
9. The inverter drive controller according to claim 8, further comprising: and the voltage selection switch is used for selecting and outputting the driving voltage source according to the selection signal provided by the overcurrent detection judgment module.
10. The inverter drive controller according to claim 9, further comprising: the PMOS tube and the PMOS tube driving module;
the NMOS tube and the PMOS tube are simultaneously switched on to form two current loops, the directions of the two current loops are opposite, and the time sequences are complementary;
and the PMOS tube driving module is used for driving the PMOS tube according to the complementary control signal generated by the driving time sequence generating module and a driving voltage source.
CN201811231539.2A 2018-10-22 2018-10-22 Inverter control method and drive controller Pending CN111082668A (en)

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Application publication date: 20200428