CN104184044A - High-power semiconductor laser system and preparing method thereof - Google Patents
High-power semiconductor laser system and preparing method thereof Download PDFInfo
- Publication number
- CN104184044A CN104184044A CN201410412518.6A CN201410412518A CN104184044A CN 104184044 A CN104184044 A CN 104184044A CN 201410412518 A CN201410412518 A CN 201410412518A CN 104184044 A CN104184044 A CN 104184044A
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- power
- laser chip
- feedback circuit
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention provides a high-power semiconductor laser system and a preparing method thereof to improve the reliability of a semiconductor laser and prolong the service life of the semiconductor laser. The high-power semiconductor laser system comprises a semiconductor laser chip, the semiconductor laser chip is encapsulated and then is connected with a positive electrode and a negative electrode, and the semiconductor laser chip is connected with a current/voltage monitoring device, a feedback circuit and a power source through the positive electrode and the negative electrode. According to the high-power semiconductor laser system and the preparing method thereof, the used feedback circuit is simple in structure, and the overall cost of the semiconductor laser can be reduced; the working life of the semiconductor laser can be greatly prolonged, and unnecessary losses are avoided.
Description
Technical field
The present invention relates to a kind of Laser Diode System, especially a kind of high-power semiconductor laser system and preparation method thereof.
Background technology
High-power semiconductor laser due to have volume little, lightweight, use electric drive, the advantage such as electro-optical efficiency is high, the life-span is long, be applied widely in fields such as industrial processes, military and national defense, medical treatment, all-solid state laser pumpings.The development trend of semiconductor laser is high power, high brightness and long-life.But the increase of semiconductor laser power can cause its junction temperature to increase, thereby causes power, the isoparametric degeneration of spectrum, and cause reliability to reduce.For example, be applied to the semiconductor laser of optical communication field, its power is conventionally in milliwatt magnitude, and corresponding working life can reach 100000 hours; And be applied at present the semiconductor laser in the field such as industrial processes, military and national defense, single bar continuous wave output power can reach 100W, typical case's quasi c. w. power output reaches 300W, corresponding working life is only several thousand hours conventionally, can not meet the application in the fields such as industrial processes, Aero-Space, military and national defense, medical treatment far away.Therefore, how to improve the key issue that reliability under semiconductor laser high-power operation pattern and life-span have become high-power semiconductor laser field and need badly solution.
Under high-power operation condition, the main cause that semiconductor laser lost efficacy is the surface damage of catastrophe optics cavity.As shown in Figure 1, along with the increase of semiconductor laser input current, junction temperature also increases thereupon, in the time that junction temperature is increased to certain critical value, the surface damage of catastrophe optics cavity can occur, and causes semiconductor laser to lose efficacy.At present, it has been generally acknowledged that the surface damage of catastrophe optics cavity has two kinds of mechanism: internal feedback mechanism and external feedback mechanism.
Near internal feedback mechanism: chip temperature of semiconductor lasers raises and causes chamber face, semi-conducting material band gap Eg (T) changes, corresponding interband absorbs increases (corresponding to laser emission wavelength), cause near face nonequilibrium carrier concentration in chamber to increase, further cause chamber surface temperature to raise.Said process can form positive feedback loop, finally causes occurring thermal runaway (thermal runaway) phenomenon, makes chamber surface temperature exceed critical value, causes the surface damage of catastrophe optics cavity.
External feedback mechanism: chip temperature of semiconductor lasers raises and causes defect assemble and produce, near the defect gathering face of chamber or in resonant cavity can cause the optical transition that defect is relevant to absorb increase, energy can be shifted to semiconductor lattice by defective bit, i.e. usually said non-radiative compound phenomenon.Non-radiative compound meeting causes junction temperature further to raise, and has formed an external feedback ring, thereby causes the surface damage of catastrophe optics cavity.
Conventionally the surface damage of catastrophe optics cavity, is to be caused by internal feedback mechanism, the acting in conjunction of external feedback mechanism.In time scale, the surface damage of catastrophe optics cavity can be divided into three processes:
The first step: the chamber surface temperature of semiconductor laser approaches critical temperature, for different films on cavity surfaces of semiconductor lasers surface state and condition of work, this process continues several nanoseconds at least, continues several years at most.
Second step: thermal runaway phenomenon produces, and chamber face temperatures at localized regions exceedes the fusing point of semi-conducting material, the local generation of chamber face melting.This process continues 1-10ns conventionally.
The 3rd step: thermal runaway phenomenon stops, if continue to apply operating current to semiconductor laser, can there is further degeneration in semiconductor laser, until complete failure.In this process, conventionally can produce blanking bar.According to the difference of condition of work, the duration of this process is conventionally from several microseconds to several milliseconds.
Based on above-mentioned theory, for fear of the surface damage of catastrophe optics cavity, on the one hand need to be from improving semiconductor laser outer layer growth technique, reducing active area defect concentration starts with, in addition on the one hand need to be for existing semiconductor laser, by designing novel semiconductor laser operating circuit, temperature at semiconductor laser has just exceeded critical temperature, catastrophe damage not yet causes semiconductor laser complete failure to change the condition of work of semiconductor laser before, reduce active area temperature, can reach raising reliability of semiconductor laser, the object increasing the service life.
Summary of the invention
The invention provides a kind of high-power semiconductor laser system and preparation method thereof, to improve the reliability of semiconductor laser, thereby extend its useful life.
For realizing above goal of the invention, the present invention proposes following basic technical scheme:
This high-power semiconductor laser system, comprises semiconductor laser chip, after semiconductor laser chip encapsulation, connects positive pole and negative pole, and described semiconductor laser chip is in parallel with current-voltage monitoring device, feedback circuit and power supply respectively by both positive and negative polarity; Described current-voltage monitoring device is for detection of the actual current/voltage at semiconductor laser chip two ends, and power supply is for powering to semiconductor laser chip; Described feedback circuit suspends or opens for control power supply in the time range of setting.
Above-mentioned feedback circuit is the controller with I/O pulse signal.
Above-mentioned feedback circuit comprises time control unit, for making feedback circuit send feedback signal being less than in 1 delicate time to power supply, power source of semiconductor laser is temporarily quit work; Described power source of semiconductor laser temporarily quit work to the time of setting, and feedback circuit applies signal again, makes power source of semiconductor laser restart work, drove semiconductor laser.
Above-mentioned semiconductor laser chip is fixedly installed on heat abstractor, and described heat abstractor is conduction cooling refrigeration radiator, liquid refrigerating radiator or TEC refrigeration and heat radiator.
Above-mentioned semiconductor laser chip is single-shot luminous point semiconductor laser chip or multiple luminous point semiconductor laser chip.
Above-mentioned power source of semiconductor laser is current source, comprises continuous current source, quasi-continuous current source and/or pulse current source etc.
A method of preparing above-mentioned high-power semiconductor laser system, comprises the following steps:
1] high-power semiconductor laser chip is encapsulated it is welded in to heat sink going up with scolder, the high-power semiconductor laser after encapsulation is fixed on heat abstractor;
2] high-power semiconductor laser chip is connected both positive and negative polarity and is connected in series with power source of semiconductor laser; Semiconductor laser both positive and negative polarity and the current-voltage monitoring device of encapsulation are connected in parallel, for detection of the actual current/voltage at semiconductor laser chip two ends simultaneously;
3] current-voltage monitoring device and feedback circuit are connected in series, feedback circuit is also connected in series with power supply.
Above-mentioned steps 1] in semiconductor laser chip comprise single-shot luminous point semiconductor laser chip, multiple luminous point semiconductor laser chip.
Above-mentioned steps 1] in heat abstractor be conduction cooling refrigeration radiator, liquid refrigerating radiator or TEC refrigeration and heat radiator.
Above-mentioned steps 2] in power source of semiconductor laser be current source, comprise continuous current source, quasi-continuous current source and/or pulse current source.
The present invention has following advantage:
The present invention's feedback circuit structure used is simple, can reduce Laser Diode System holistic cost; Can greatly improve the working life of semiconductor laser, avoid unnecessary loss.
Brief description of the drawings
Fig. 1 is catastrophe optics cavity surface damage schematic diagram;
Fig. 2 is described high-power semiconductor laser entire system schematic diagram;
Accompanying drawing is detailed as follows: 1-heat abstractor, 2-positive pole, 3-semiconductor laser chip, 4-negative pole, 5-power source of semiconductor laser, 6-current/voltage monitoring device, 7-feedback circuit.
Embodiment
Principle of the present invention is to draw based on the theoretical institute of catastrophe optics cavity surface damage, specifically according to catastrophe defect theory result of study, at the second stage of catastrophe optics cavity surface damage, be that thermal runaway produces the stage, films on cavity surfaces of semiconductor lasers temperatures at localized regions exceedes fusing point, chamber face partial melting.Known according to formula (1), the threshold current I of semiconductor laser
thcan vary with temperature and change.
I
th＝I
th0exp(T/T
0) (1)
Therefore, the current/voltage of semiconductor laser chip also can vary with temperature and produce a small variation.By increase a current-voltage monitoring device and feedback circuit in Laser Diode System, voltage and the current status of current-voltage monitoring device Real-Time Monitoring semiconductor laser, as found, the electric current of semiconductor laser and voltage occur abnormal, illustrate that thermal runaway phenomenon may occur in semiconductor laser part, within the utmost point short time, (be conventionally less than 1 microsecond) by feedback circuit and send a feedback signal to laser power supply, semiconductor laser is temporarily quit work, can avoid films on cavity surfaces of semiconductor lasers further to degenerate, thereby avoid semiconductor laser complete failure.After several seconds, again apply electric current at semiconductor laser in semiconductor laser break-off, can make semiconductor laser continue normal work, therefore significantly increased the useful life of semiconductor laser.
Based on above-mentioned theory analysis result, the structure of high-power semiconductor laser system of the present invention is specifically: this high-power semiconductor laser system comprises semiconductor laser chip, and semiconductor laser chip is connected with current-voltage monitoring device, feedback circuit and power supply respectively.
The specific process of this high-power semiconductor laser system is as follows:
High-power semiconductor laser chip is encapsulated, it is welded with heat sink upper with scolder, and connect both positive and negative polarity; Semiconductor laser chip comprises single-shot luminous point semiconductor laser chip, multiple luminous point semiconductor laser chip etc.
High-power semiconductor laser after encapsulation is fixed on heat abstractor, as conduction cooling refrigeration radiator, liquid refrigerating radiator, TEC refrigerator etc.;
The semiconductor laser both positive and negative polarity of encapsulation is connected with the both positive and negative polarity of power supply respectively; Power supply is for powering to semiconductor laser chip; Power source of semiconductor laser is current source, can comprise continuous current source, quasi-continuous current source, pulse current source etc.
The semiconductor laser both positive and negative polarity of encapsulation is connected with current-voltage monitoring device respectively; Current-voltage monitoring device is for detection of the actual current/voltage at semiconductor laser chip two ends;
Current-voltage monitoring device is connected with feedback circuit, and feedback circuit is also connected with power supply, and feedback circuit can transmit control signal to power supply.
Feedback circuit is a controller with I/O pulse signal, can accept the control signal that current-voltage monitoring device sends; Feedback circuit can send feedback signal being less than in 1 microsecond time to power supply, and power source of semiconductor laser is temporarily quit work.Temporarily quit work after a period of time at power source of semiconductor laser, feedback circuit can apply signal again, makes power source of semiconductor laser restart work, drives semiconductor laser.
Feedback loop forms between power supply and current-voltage monitoring device, power supply is connected with feedback circuit respectively with current/voltage monitoring system, when the measured signal of current-voltage monitoring device exceeds stationary value scope, current-voltage monitoring device sends a pulse signal to feedback circuit, and feedback circuit sends a pulse signal to power supply.Power supply receives after this signal, temporarily quit work, thereby semiconductor laser temporarily quits work.(be generally several seconds) through after a while, feedback circuit sends a pulse signal to power supply again, makes power supply restart work, and corresponding laser is also started working.
In conjunction with said apparatus, its method of work is specially:
If the measured curtage signal of current-voltage monitoring device 6 exceeds reliable value, current/voltage monitoring device can send a pulse signal to feedback circuit 7 being less than in 1 millisecond of time, feedback circuit 7 sends a feedback signal to power supply 5, power supply 5 is accepted after this pulse signal, automatically temporary close power supply, power source of semiconductor laser is temporarily quit work, and corresponding semiconductor laser temporarily quits work, and avoids the further expansion of semiconductor laser chip COD damage.Temporarily quit work after a period of time at power source of semiconductor laser, feedback circuit 7 can apply signal again, makes power source of semiconductor laser restart work, drives semiconductor laser.
Claims (10)
1. a high-power semiconductor laser system, comprise semiconductor laser chip, after semiconductor laser chip encapsulation, connect positive pole and negative pole, it is characterized in that: described semiconductor laser chip is in parallel with current-voltage monitoring device, feedback circuit and power supply respectively by both positive and negative polarity; Described current-voltage monitoring device is for detection of the actual current/voltage at semiconductor laser chip two ends, and power supply is for powering to semiconductor laser chip; Described feedback circuit suspends or opens for control power supply in the time range of setting.
2. high-power semiconductor laser system according to claim 1, is characterized in that: described feedback circuit is the controller with I/O pulse signal.
3. high-power semiconductor laser system according to claim 2, it is characterized in that: described feedback circuit comprises time control unit, be used for making feedback circuit to send feedback signal being less than in 1 microsecond time to power supply, power source of semiconductor laser is temporarily quit work; Described power source of semiconductor laser temporarily quit work to the time of setting, and feedback circuit applies signal again, makes power source of semiconductor laser restart work, drove semiconductor laser.
4. according to the arbitrary described high-power semiconductor laser system of claims 1 to 3, it is characterized in that: described semiconductor laser chip is fixedly installed on heat abstractor, described heat abstractor is conduction cooling refrigeration radiator, liquid refrigerating radiator or TEC refrigeration and heat radiator.
5. high-power semiconductor laser system according to claim 4, is characterized in that: described semiconductor laser chip is single-shot luminous point semiconductor laser chip or multiple luminous point semiconductor laser chip.
6. high-power semiconductor laser system according to claim 5, is characterized in that: described power source of semiconductor laser is current source, comprises continuous current source, quasi-continuous current source and/or pulse current source.
7. prepare a method for high-power semiconductor laser system as claimed in claim 6, it is characterized in that, comprise the following steps:
1] high-power semiconductor laser chip is encapsulated it is welded in to heat sink going up with scolder, the high-power semiconductor laser after encapsulation is fixed on heat abstractor;
2] high-power semiconductor laser chip is connected both positive and negative polarity and is connected in series with power source of semiconductor laser; Semiconductor laser both positive and negative polarity and the current-voltage monitoring device of encapsulation are connected in parallel, for detection of the actual current/voltage at semiconductor laser chip two ends simultaneously;
3] current-voltage monitoring device and feedback circuit are connected in series, feedback circuit is also connected in series with power supply.
8. the preparation method of high-power semiconductor laser system according to claim 7, is characterized in that: step 1] described in semiconductor laser chip comprise single-shot luminous point semiconductor laser chip, multiple luminous point semiconductor laser chip.
9. the preparation method of high-power semiconductor laser system according to claim 8, is characterized in that: step 1] described in heat abstractor be conduction cooling refrigeration radiator, liquid refrigerating radiator or TEC refrigeration and heat radiator.
10. the preparation method of high-power semiconductor laser system according to claim 9, is characterized in that: step 2] to state power source of semiconductor laser be current source, comprises continuous current source, quasi-continuous current source and/or pulse current source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410412518.6A CN104184044A (en) | 2014-08-20 | 2014-08-20 | High-power semiconductor laser system and preparing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410412518.6A CN104184044A (en) | 2014-08-20 | 2014-08-20 | High-power semiconductor laser system and preparing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104184044A true CN104184044A (en) | 2014-12-03 |
Family
ID=51964893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410412518.6A Pending CN104184044A (en) | 2014-08-20 | 2014-08-20 | High-power semiconductor laser system and preparing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104184044A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109536948A (en) * | 2018-12-05 | 2019-03-29 | 攀枝花市三圣机械制造有限责任公司 | A kind of Laser Diode System based on laser melting coating |
| CN109798937A (en) * | 2019-02-18 | 2019-05-24 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Low-power semiconductor laser reliability Auto-Test System |
| CN109888610A (en) * | 2019-02-18 | 2019-06-14 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Multistation reliability of semiconductor laser test macro |
| CN111988088A (en) * | 2019-05-24 | 2020-11-24 | 京瓷株式会社 | Power supply device and power receiving device of optical power supply system, and optical power supply system |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102089949A (en) * | 2008-07-11 | 2011-06-08 | 小威廉·R·本纳 | Fault protector for opto-electronic devices and associated methods |
| CN102549857A (en) * | 2009-08-21 | 2012-07-04 | 株式会社理光 | Semiconductor laser driving device and image forming apparatus having the semiconductor laser driving device |
| US20120205526A1 (en) * | 2011-02-15 | 2012-08-16 | Kohei Iwanaga | Optical transmission device, optical transmission/reception device, control method, and control program |
| CN202906196U (en) * | 2012-11-09 | 2013-04-24 | 维林光电(苏州)有限公司 | A semiconductor laser |
| CN203014159U (en) * | 2012-11-01 | 2013-06-19 | 西安华科光电有限公司 | Laser |
| CN103701033A (en) * | 2013-11-26 | 2014-04-02 | 上海华魏光纤传感技术有限公司 | Work protection system for DFB (distributed feed back) laser |
| CN204088872U (en) * | 2014-08-20 | 2015-01-07 | 中国科学院西安光学精密机械研究所 | A kind of high-power semiconductor laser system |
-
2014
- 2014-08-20 CN CN201410412518.6A patent/CN104184044A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102089949A (en) * | 2008-07-11 | 2011-06-08 | 小威廉·R·本纳 | Fault protector for opto-electronic devices and associated methods |
| CN102549857A (en) * | 2009-08-21 | 2012-07-04 | 株式会社理光 | Semiconductor laser driving device and image forming apparatus having the semiconductor laser driving device |
| US20120205526A1 (en) * | 2011-02-15 | 2012-08-16 | Kohei Iwanaga | Optical transmission device, optical transmission/reception device, control method, and control program |
| CN203014159U (en) * | 2012-11-01 | 2013-06-19 | 西安华科光电有限公司 | Laser |
| CN202906196U (en) * | 2012-11-09 | 2013-04-24 | 维林光电(苏州)有限公司 | A semiconductor laser |
| CN103701033A (en) * | 2013-11-26 | 2014-04-02 | 上海华魏光纤传感技术有限公司 | Work protection system for DFB (distributed feed back) laser |
| CN204088872U (en) * | 2014-08-20 | 2015-01-07 | 中国科学院西安光学精密机械研究所 | A kind of high-power semiconductor laser system |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109536948A (en) * | 2018-12-05 | 2019-03-29 | 攀枝花市三圣机械制造有限责任公司 | A kind of Laser Diode System based on laser melting coating |
| CN109798937A (en) * | 2019-02-18 | 2019-05-24 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Low-power semiconductor laser reliability Auto-Test System |
| CN109888610A (en) * | 2019-02-18 | 2019-06-14 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Multistation reliability of semiconductor laser test macro |
| CN111988088A (en) * | 2019-05-24 | 2020-11-24 | 京瓷株式会社 | Power supply device and power receiving device of optical power supply system, and optical power supply system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104184044A (en) | High-power semiconductor laser system and preparing method thereof | |
| CN201528122U (en) | Q-switched laser of electro-optical lanthanum gallium silicate single crystal | |
| CN204103242U (en) | A kind of high power single longitudinal mode ultraviolet all-solid-state laser | |
| CN101179176A (en) | Semiconductor dual-end pumped third harmonic ultraviolet laser | |
| CN102447219B (en) | Optical power control circuit | |
| CN102208742A (en) | Conductively cooled high-repetition single frequency Nd: YAG Laser | |
| CN102769245A (en) | 1064nm single-frequency double-pulse laser for seed injection | |
| CN103779776A (en) | Seed injection single-frequency pulse laser based on tunable cavity length of electro-optical crystal | |
| CN103811990A (en) | Terahertz parameter source and application thereof on the basis of potassium titanium oxide arsenate crystals | |
| CN204088872U (en) | A kind of high-power semiconductor laser system | |
| CN101983416A (en) | Annealing apparatus | |
| CN202025979U (en) | LD (laser diode) pump full-solid state green-light laser | |
| CN102820605A (en) | High power mini laser package | |
| CN102244348A (en) | Air-cooled all-solid 526nm pulsed laser | |
| Bai et al. | High-efficiency kW-class QCW 88x-nm diode semiconductor laser bars with passive cooling | |
| CN210536006U (en) | Semiconductor laser driving power supply system | |
| Wang et al. | High-power semiconductor laser array packaged on microchannel cooler using gold-tin soldering technology | |
| CN209281403U (en) | A kind of highly reliable universal solid state hard disk rapid physical destruction circuit | |
| CN102916336A (en) | Method for reducing energy consumption of thermoelectric cooler (TEC) of laser | |
| CN108512031B (en) | Micro-channel semiconductor laser chip structure and manufacturing method thereof | |
| CN114552363B (en) | Lithium niobate blocking voltage setting method of solid laser | |
| CN1278655C (en) | Nd-doped yttrium vanadate laser therapeutical machine | |
| CN201069849Y (en) | Blue laser | |
| CN202076671U (en) | All-solid air-cooling 526nm pulse laser | |
| CN202094473U (en) | Diode pump all-solid-state high-power solid laser device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20141203 |
|
| RJ01 | Rejection of invention patent application after publication |