CN209281403U - A kind of highly reliable universal solid state hard disk rapid physical destruction circuit - Google Patents

Abstract

A kind of highly reliable universal solid state hard disk rapid physical destruction circuit, belongs to electronic technology field, including multichannel DC-DC module and FLASH array；It is characterized by also including input power limitation module, DC voltage conversion module, self-destruction control module and switching tubes；Input power limitation module and DC voltage conversion module are set side by side；DC voltage conversion module, self-destruction control module and switching tube are successively electrically connected；The switching tube is electrically connected with FLASH array.Circuit design is simple, and peripheral cell number is few and small in size, and the destruction time is controllable, and destruction rate is high；Efficiently solve the problems, such as that self-destruction circuit volume is excessive, self-destruction time is long, input power is big present in existing scheme, self-destruction is incomplete excessively complicated with self-destruction circuit and reliability is low, as the universal physical destroying circuit and method for being applicable to various environmental conditions, various mainstream standard size solid state hard disks, meet the industries such as national defence, finance to the privacy requirements of data safety.

Description

A kind of highly reliable universal solid state hard disk rapid physical destruction circuit

Technical field

The utility model belongs to electronic technology field, more particularly to a kind of highly reliable universal solid state hard disk rapid physical pin Ruin circuit.

Background technique

With the fast development of informationization technology, global metadata total amount continues to increase.It is carried out according to current annual growth 50% It calculates, arrives the year two thousand twenty, global metadata total amount is up to 40ZB, and China's total amount of data will reach 8.6ZB, Zhan Quanqiu 21% or so.At this Under kind background, solid state hard disk is as data medium because its ultra high data throughput rate and vast capacity have been made by all trades and professions extensively With, but incident problem of data safety also becomes increasingly conspicuous.

Soft destruction and physical destroying be under special circumstances for protection solid state hard disk data safety and take two kinds effectively Measure is common in financial industry, national defence industry and the high industry of other security requirements.It, should be with number when undesirable situation occurs Destruction measure is selected according to confidentiality requirement is standard.

The soft destruction of solid state hard disk refers to that sending order by host is wiped and covered to the storage medium of solid state hard disk A kind of behavior of non-physical failure mode of lid.Usually soft destruction first can all wipe the data on storage medium, then lead to It crosses filling complete " 0 ", complete " F " or random number to be covered, so that initial data is irrecoverable, and then reaches protection data safety Purpose.But since the characteristic of solid state hard disk storage medium itself, erasing and covering operation can continue the regular hour, and when Between length it is related with solid state hard disk capacity, range is in tens of seconds between several minutes.If data security is required to data pin Ruin the time have strict upper bound provide or require to destroy the time it is more shorter better, then to will no longer be suitable for large capacity solid-state hard for soft destruction Disk.

The physical destroying of solid state hard disk, which then refers to, carries out electrical, machinery to storage medium thereon by external signal triggering Or the physical structure of chemical species is destroyed.In general, physical destroying needs to reach the journey of wafer inside damage storage chip Degree, fundamentally ensure that the irrecoverability of data in this way, then achieve the purpose that protect data safety.Domestic at present consolidates State hard disc physical destroying method is limited to volume and safety requirements, destroyed with electrical form based on.The destruction of these electrical forms Principle is different, for the method for patent applied for or circuit, is not able to satisfy safe and reliable, low-power input, very short time The user demand or objective requirement of destruction.For special industry, especially national defense construction, a kind of input power of utility model is low, Destroy the time it is short, be adapted to various environmental conditions, not using reduce solid-state disk own reliability as cost and can to data into The physical destroying method that row is absolutely protected is imperative.

Summary of the invention

The utility model aims to solve the problem that the above problem, provides a kind of highly reliable universal solid state hard disk rapid physical destruction electricity Road.

Highly reliable universal solid state hard disk rapid physical described in the utility model destroys circuit, including multichannel DC-DC module With FLASH array；The multichannel DC-DC module is electrically connected with FLASH array；It further include input power limitation module, direct current Voltage transformation module, self-destruction control module and switching tube；The input power limitation module and DC voltage conversion module are arranged side by side Setting；The input power limitation module is electrically connected with switching tube；The DC voltage conversion module, self-destruction control module and Switching tube is successively electrically connected；The switching tube is electrically connected with FLASH array.

Highly reliable universal solid state hard disk rapid physical described in the utility model destroys circuit, and the input power limits mould Block is constant flow module or electrical fuse；The switching tube is MOSFET array or IGBT array or BJT array；The MOSFET The basic unit of array be low on-resistance Rds(on) PMOS.

Highly reliable universal solid state hard disk rapid physical described in the utility model destroys circuit, in the self-destruction control module It is provided with embedded chip；The embedded chip is ARM chip or single-chip microcontroller or dsp chip or fpga chip.

Highly reliable universal solid state hard disk rapid physical described in the utility model destroys circuit, the constant flow module completion pair Destroy the conversion process of voltage and the restriction effect to input power.Its input voltage is 5V-40V, output voltage 8V- 36V is adjustable, current-limiting points 0.1A-7.0A, and the starting time is adjustable.

Highly reliable universal solid state hard disk rapid physical described in the utility model destroys circuit, the DC voltage conversion mould Block provides normal working voltage, input voltage 2.7V-40V for self-destruction control module, and has various circuit protection functions.

Highly reliable universal solid state hard disk rapid physical described in the utility model destroys circuit, the multichannel DC-DC module Isolating diode is provided between FLASH array.

Highly reliable universal solid state hard disk rapid physical described in the utility model destroys the destroying method of circuit, input power Limitation module and DC voltage conversion module receive destruction voltage, and the output of input power limitation module and switching tube are connected It connects, DC voltage conversion module is then individually for the power supply of self-destruction control module；Self-destruction control module automatic running self-destruction program, output Signal is controlled to switching tube, different crystal pipe is connected one by one according to the setup parameter of self-destruction program in control switch pipe；When wherein After a certain transistor turns, the destruction voltage that input power limitation module generates is added to the power supply of the corresponding FLASH of FLASH array Piece FLASH is burnt in port；After all FLASH are all burnt, that is, complete the physical destroying of solid state hard disk.

Highly reliable universal solid state hard disk rapid physical described in the utility model destroys the destroying method of circuit, the input Power limitation module is constant flow module or electrical fuse；The switching tube is MOSFET array or IGBT array or BJT array； The basic unit of the MOSFET array be low on-resistance Rds(on) PMOS.

Highly reliable universal solid state hard disk rapid physical described in the utility model destroys the destroying method of circuit, the control The specific steps that different crystal pipe is connected one by one according to the setup parameter of self-destruction program in MOSFET array are as follows: self-destruction control module Output pin successively in MOSFET array corresponding NPN transistor base stage connect, when self-destruction control module export high level When, make the NPN transistor saturation conduction first, the Vgs for the PMOS being attached thereto reaches threshold voltage, D-S conducting, through constant current mould Energy after block conversion pours into corresponding FLASH power port by PMOS, and then burns the FLASH；When output level is low electricity Usually, NPN transistor is by PMOS shutdown, road FLASH destroys EP (end of program), and FLASH destroys program all the way under.

Highly reliable universal solid state hard disk rapid physical described in the utility model destroys the destroying method of circuit, the multichannel Isolating diode is provided between DC-DC module and FLASH array；It is hard to physical destroying circuit and solid-state using isolating diode Disk, which works normally power supply circuit, is isolated, and can prevent the high pressure generated in Destruction from flowing backward, and guarantees that solid-state disk works normally The voltage stabilization of power supply line.

Highly reliable universal solid state hard disk rapid physical described in the utility model destroys circuit and method, including constant current mould Block, DC voltage conversion module, self-destruction control module, MOSFET array and FLASH array；Circuit design is simple, peripheral cell Number is few and small in size, and the destruction time is controllable, and destruction rate is high；Efficiently solve self-destruction circuit volume mistake present in existing scheme Greatly, self-destruction time is long, input power is big, the incomplete problem excessively complicated and low reliability with self-destruction circuit of self-destruction, and becoming can Suitable for various environmental conditions, the universal physical destroying circuit of various mainstream standard size solid state hard disks and method, meet state Privacy requirements of the industries such as anti-, finance to data safety.

Detailed description of the invention

Fig. 1 is that highly reliable universal solid state hard disk rapid physical described in the utility model destroys electrical block diagram.

Specific embodiment

Highly reliable universal solid state hard disk rapid physical described in the utility model is destroyed with reference to the accompanying drawings and embodiments Circuit is described in detail.

In the present embodiment, input power limitation module uses MOSFET array using constant flow module, switching tube；This is practical The novel highly reliable universal solid state hard disk rapid physical destroys circuit, including connector, master controller, multichannel DC-DC mould Block and FLASH array；The main controller and multichannel DC-DC module are electrically connected with FLASH array；The main controller and multichannel DC-DC module is connected with connector；Further include constant flow module, DC voltage conversion module, self-destruction control module and MOSFET array；The constant flow module and DC voltage conversion module are set side by side；The constant flow module and MOSFET array phase Electrical connection；The DC voltage conversion module, self-destruction control module and MOSFET array are successively electrically connected；It is MOSFET gusts described Column are electrically connected with FLASH array.Isolating diode is provided between DC voltage conversion module and FLASH array.Whole electricity Road surface product is no more than 400mm², highly be no more than 2mm, can be applied to the solid state hard disk of various mainstream standard sizes；Such as Fig. 1 institute Show, solid state hard disk carries out data interaction by data transmission link and external equipment, while providing solid-state by external power supply route Disk normal working voltage, dedicated power supply line provide physical destroying voltage.

Constant flow module in physical destroying circuit is completed to the conversion process for destroying voltage and to the limitation of input power Effect.The constant flow module nominal input voltage is 28V, is operable within the scope of 5V-40V, output voltage (FLASH destroys voltage) 8V-36V is adjustable, current-limiting points 0.1A-7.0A is adjustable, the starting time can be adjusted by external programming capacitor.When FLASH power supply After the puncture short of port, which reaches current-limiting points, can start constant current function automatically, so that physical destroying supplies The input power of circuit is maintained at a controllable range, and meets actual requirement.One typical destruction input voltage model It encloses for 16V-28V, input current range 1A-4A, input power 16W-112W, which is much smaller than the similar technique for not carrying out current limliting Scheme reduces input power.In addition, in Destruction, destroy the stability of voltage and solid-state disk operating voltage not by It influences, therefore several solid-state disks can be destroyed simultaneously.

DC voltage conversion module has liter-decompression (Buck-Boost) function, provides normal work for self-destruction control module Make voltage.The module have wide input voltage range (2.7V-40V), high conversion efficiency (under normal loading conditions up to 90% with Upper efficiency), the distinguishing feature that peripheral cell is few, temperature range is wide (meet -55 DEG C of -125 DEG C of operating ambient temperatures), and had The functions such as protection, overcurrent protection, overheat protector, under-voltage protection are pressed, and mutually indepedent with constant flow module, it can be in various adverse circumstances Under reliablely and stablely provide normal working voltage for control module, guarantee that destruction acts safe and reliable progress.

Use low on-resistance Rds(on) PMOS as the basic unit of MOSFET array, be controlled by control module, make For the power channels for destroying FLASH.The output pin of control module is successively connected to the base stage of NPN transistor corresponding in array, When control module exports high level, make the NPN transistor saturation conduction first, the Vgs for the PMOS being attached thereto reaches threshold Threshold voltage, D-S conducting, the energy after constant flow module converts pours into corresponding FLASH power port by PMOS, and then burns this FLASH；When output level is low level, NPN transistor is by PMOS shutdown, road FLASH destroys EP (end of program), enters Under all the way FLASH destroy program.

Control module is equipped with extremely simple peripheral circuit using ARM embedded chip as core, itself consumption minimum energy.Control The time for destroying FLASH and order can be set in the program curing of module, is set as successively destroying 16 in 1 second in the present embodiment Piece FLASH.

When the starting of physical destroying process, destroys voltage and respectively enter hard drive internal constant flow module and DC voltage conversion The output of constant flow module is connect by module with MOSFET array, and DC voltage conversion module is then individually for the confession of self-destruction control module Electricity.The self-destruction program that meeting automatic running has been cured after self-destruction control module works normally, outputs a control signal to MOSFET times Column, control different MOSFET and are connected one by one according to device position sequence, turn-on time 50ms.When wherein a certain MOSFET conducting Afterwards, the destruction voltage that constant flow module generates can be added to the power port of corresponding storage medium (FLASH), and piece FLASH is burnt. After all FLASH are all burnt, that is, complete the physical destroying of solid state hard disk.Circuit design simplicity, high reliablity, while volume It is minimum, various standard-sized solid state hard disks can be conveniently applied to.

Isolating diode is placed between multichannel DC-DC module and FLASH array, to physical destroying circuit and solid state hard disk It works normally power supply circuit to be isolated, can prevent the high pressure generated in Destruction from flowing backward, guarantee that solid-state disk works normally and supply The voltage stabilization of electric line.

Physical destroying circuit self-destruction time described in the present embodiment is controllable, is set according to solid state hard disk actual storage medium number It is corresponding to destroy the time, it is most short down to 50ms, it is much better than existing self-destruction time up to even several minutes of physical destroying scheme of tens of seconds； It is controlled using constant flow module and destroys input power, it is uncontrollable on the one hand to solve input power during destroying in existing destruction scheme The problem of, minimum power input (down to 16W) on the other hand can be used and achieve the purpose that physical destroying, and due to constant current mould The presence of block does not influence the stability of total system so that destroy input voltage does not generate fluctuation during destruction；Pass through simultaneously It destroys control module to destroy all storage mediums (FLASH) one by one, it is ensured that every FLASH is burnt by abundant breakdown, is kept away Exempt from existing patent formula while having destroyed FLASH and the incomplete problem of destruction that generates；Used component all belongs to low work Make crash rate type device (can be calculated by GJB299C-2009), without super capacitor, the battery etc. in existing patent formula Vulnerable component, while being operable in -55 DEG C -+125 DEG C temperature ranges, overall circuit design allowance is sufficient, especially suitable for In the national defence industry of the environment such as Aeronautics and Astronautics harshness.

Claims (6)

1. a kind of highly reliable universal solid state hard disk rapid physical destroys circuit, including multichannel DC-DC module and FLASH array； The multichannel DC-DC module is electrically connected with FLASH array；It is characterized by also including input powers to limit module, direct current Press conversion module, self-destruction control module and switching tube；The input power limitation module and DC voltage conversion module are set side by side It sets；The input power limitation module is electrically connected with switching tube；It the DC voltage conversion module, self-destruction control module and opens Pipe is closed successively to be electrically connected；The switching tube is electrically connected with FLASH array.

2. highly reliable universal solid state hard disk rapid physical destroys circuit according to claim 1, it is characterised in that: described defeated Entering power limitation module is constant flow module or electrical fuse；The switching tube is MOSFET array or IGBT array or BJT gusts Column；The basic unit of the MOSFET array is the PMOS of low on-resistance.

3. highly reliable universal solid state hard disk rapid physical destroys circuit according to claim 2, it is characterised in that: it is described from It ruins and is provided with embedded chip in control module；The embedded chip is ARM chip or single-chip microcontroller or dsp chip or FPGA core Piece.

4. highly reliable universal solid state hard disk rapid physical destroys circuit according to claim 3, it is characterised in that: the perseverance The input voltage of flow module is 5V-40V, output voltage is that 8V-36V is adjustable, current-limiting points 0.1A-7.0A.

5. highly reliable universal solid state hard disk rapid physical destroys circuit according to claim 4, it is characterised in that: described straight It is 2.7V-40V that galvanic electricity, which presses the input voltage of conversion module,.

6. according to claim 1 or the 5 highly reliable universal solid state hard disk rapid physicals destroy circuit, it is characterised in that: institute It states and is provided with isolating diode between multichannel DC-DC module and FLASH array.