CN114520215A - LED chip, LED lamp and working method - Google Patents

LED chip, LED lamp and working method Download PDF

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CN114520215A
CN114520215A CN202111185380.7A CN202111185380A CN114520215A CN 114520215 A CN114520215 A CN 114520215A CN 202111185380 A CN202111185380 A CN 202111185380A CN 114520215 A CN114520215 A CN 114520215A
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chip
led
led chip
circuit
carrier
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蒋夏静
楼鸿玮
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Migang New Materials Technology Shanghai Co ltd
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Migang New Materials Technology Shanghai Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/238—Arrangement or mounting of circuit elements integrated in the light source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

The invention provides an LED chip, an LED lamp and a working method, wherein the LED chip comprises a circuit carrier and at least one chip module, the at least one chip module is arranged on the circuit carrier, the chip modules are electrically connected with the circuit carrier, and the chip modules are connected into an integral structure capable of being electrically conducted by the circuit carrier, wherein the chip module comprises at least one chip unit, and the chip unit has a rated working current, so that when the LED lamp is lightened, the forward working current of the chip unit of the LED lamp is lower than 69.8% of the rated forward current of the LED chip, the heat generated by the work of the LED chip is reduced, and the light output of the LED chip is improved.

Description

LED chip, LED lamp and working method
Technical Field
The invention relates to the field of LEDs, in particular to an LED chip, an LED lamp and a working method.
Background
The LED has the characteristic of a semiconductor heterojunction, shows the unique I-V rectification characteristic of a PN junction, namely forward conduction, reverse cut-off or breakdown; when a forward voltage is applied to the LED (the P electrode is connected with the anode, and the N electrode is connected with the cathode), the junction voltage is reduced. Under the action of an external electric field, electrons in the N region drift and diffuse towards the P region, and holes in the P region drift and diffuse towards the N region. The electrons and holes recombine radiatively in the active region (at the PN junction or in the quantum well) to emit photons, which escape from the semiconductor into the air to achieve luminescence.
The LED is influenced by various stress factors such as electricity, heat, machinery and the like to age in the long-term use process, so that the reliability is reduced, the lighting effect is reduced, and the service life is shortened, while the lighting effect of the conventional LED lamp is lower than 100 lm/W. The low luminous efficiency directly influences the service performance and the lighting performance of the lamp. Although LEDs are widely used in various electronic and electrical devices, if reliability, energy-saving efficiency and service life cannot be guaranteed, problems such as resource consumption and energy-saving will occur in the using process. Therefore, the deep research on improving the luminous efficiency and prolonging the service life of the LED is of great significance.
Heat dissipation is a significant problem for high power LEDs. Relevant research and practice show that when the temperature of an LED chip exceeds a certain value, the failure rate of a device exponentially rises. The aging of the device is accelerated by the over-temperature of the LED chip. More importantly, as the temperature of the chip increases, the light extraction efficiency decreases and the light output decreases because of the increased leakage current caused by thermal effects. As the temperature rises, carriers injected into the PN junction active region leak, so that the capture rate is reduced, and the capability of the nonradiative recombination energy level for capturing the carriers is enhanced. In addition, excessive chip temperature may also cause the chip to burn out. The aging yellowing of epoxy resin, the aging of fluorescent powder and the cracking of the packaging material which appear in the test are all the results under the action of long-term high temperature.
The main reasons influencing the temperature of the LED lamp include heat generated by the LED chip during the light emitting process, influence of ambient temperature, and heat dissipation effect of the lamp itself, where the ambient temperature is an uncontrollable factor, and it is difficult to accurately keep the lamp working in a constant temperature environment, especially for an outdoor LED lamp, which is usually influenced by the temperature in the nature; secondly, the self-heat dissipation factor of the lamp is not changed, so the most important factor influencing the temperature of the LED lamp is the heat generated by the LED chip in the working process.
Disclosure of Invention
One of the objectives of the present invention is to provide an LED chip, an LED lamp and a working method thereof, wherein the LED chip system can effectively control the junction temperature of a PN junction, so that an LED can work at a relatively low temperature, thereby improving the internal quantum efficiency and the external quantum efficiency of the LED chip, effectively improving the light output of the LED, and improving the stability of the LED in a long-term working process.
The invention further aims to provide the LED chip, the LED lamp and the working method, which can improve the LED lighting effect.
Another objective of the present invention is to provide an LED chip, an LED lamp and a working method thereof, which can effectively improve the internal quantum efficiency and the external quantum efficiency of the LED.
Another object of the present invention is to provide an LED chip, an LED lamp and an operating method thereof, which can prevent the LED from aging due to high temperature.
Another object of the present invention is to provide an LED chip, an LED lamp and an operating method thereof, wherein the LED chip is suitable for the LED lamp, and the operating current of the LED chip is controlled to be below the rated current, so as to reduce the heat generated by the LED chip during the operation process, thereby reducing the temperature of the LED lamp.
Another object of the present invention is to provide an LED chip, an LED lamp and an operating method thereof, wherein the forward input current of the LED chip of the LED is controlled to 69.8% of the rated current, so as to effectively control the junction temperature of the PN junction, so that the LED operates at a lower temperature, thereby improving the internal quantum efficiency and the external quantum efficiency of the LED chip, effectively improving the light output of the LED, and improving the stability of the LED during long-term operation.
Another object of the present invention is to provide an LED chip, an LED lamp and an operating method thereof, wherein the forward working current of the LED chip is reduced to effectively improve the external quantum efficiency of the LED lamp, thereby improving the luminous efficiency of the LED lamp.
Another objective of the present invention is to provide an LED chip, an LED lamp and a working method thereof, wherein the influence of heat on the LED lamp is reduced by controlling the forward input current of the LED chip, which is beneficial to reducing the aging speed of the LED lamp, thereby prolonging the service life of the LED lamp.
Another object of the present invention is to provide an LED chip, an LED lamp and an operating method thereof, wherein the forward working current of the LED chip is reduced to effectively improve the internal quantum efficiency of the LED lamp, thereby improving the luminous efficiency of the LED lamp.
In order to achieve at least one of the above objects, the present invention provides an LED chip suitable for an LED lamp, including:
a circuit carrier; and
at least one chip module, wherein the at least one chip module is disposed on the circuit carrier, and each chip module is electrically connected to the circuit carrier, and the circuit carrier connects each chip module to form an electrically conductive integrated structure, wherein the chip module comprises at least one chip unit, and the chip unit has a rated operating current, so that when the LED lamp is turned on, the forward operating current of the chip unit of the LED lamp is lower than 69.8% of the rated forward current of the LED chip, so as to reduce the heat generated by the operation of the LED chip and increase the light output of the LED chip.
According to an embodiment of the present invention, the circuit carrier includes a carrier body and at least one circuit structure disposed on the carrier body, wherein the chip modules are soldered on a surface of the carrier body, and each of the chip modules is electrically connected to the circuit structure, and the circuit structure is electrically connected to the chip module in a conductive manner.
According to an embodiment of the present invention, the circuit carrier further includes at least one positive terminal and at least one negative terminal, wherein the positive terminal and the negative terminal are connected to the carrier body, and the at least one positive terminal and the at least one negative terminal are electrically conductively connected to each of the chip modules through the circuit structure.
According to an embodiment of the present invention, the chip modules are soldered to the main carrier body of the circuit carrier in an array.
According to an embodiment of the present invention, the number of the chip modules is Y — PQ, that is, the chip modules are P-serial-Q parallel array modules.
According to an embodiment of the present invention, the chip module includes S ═ XY chip units, where the chip units are connected in an X-serial-Y-parallel manner.
According to another aspect of the present invention, the present invention further provides an LED lamp, comprising:
a circuit board, set up in at least an LED chip and a plurality of lamp pearl of circuit board, wherein a plurality of lamp pearls with at least an LED chip passes through the circuit board realizes electrical connection, wherein the LED chip includes:
a circuit carrier; and
at least one chip module, wherein the at least one chip module is disposed on the circuit carrier, and each chip module is electrically connected to the circuit carrier, and the circuit carrier connects each chip module to form an electrically conductive integrated structure, wherein the chip module comprises at least one chip unit, and the chip unit has a rated operating current, so that when the LED lamp is turned on, the forward operating current of the chip unit of the LED lamp is lower than 69.8% of the rated forward current of the LED chip, so as to reduce the heat generated by the operation of the LED chip and increase the light output of the LED chip.
According to an embodiment of the present invention, the circuit carrier includes a carrier body and at least one circuit structure disposed on the carrier body, wherein the chip modules are soldered on a surface of the carrier body, and each of the chip modules is electrically connected to the circuit structure, and the circuit structure is electrically connected to the chip module in a conductive manner.
According to an embodiment of the present invention, the at least one LED chip and the plurality of lamp beads are distributed on two sides of the circuit board. The circuit board is provided with a front side and a back side which faces back to the front side, wherein the at least one LED chip is arranged on the back side of the circuit board, and the plurality of lamp beads are arranged on the front side of the circuit board.
According to another aspect of the present invention, the present invention further provides a method for operating an LED lamp, wherein the method comprises the following steps:
inputting a forward working current to a positive terminal of an LED chip; and
at least one chip unit of at least one chip module is electrically conducted through a circuit structure of the LED chip, wherein the operating current of the chip unit is lower than 69.8% of the rated operating current, so as to reduce the heat generated by the operation of the LED chip and improve the light output efficiency of the LED.
Drawings
Fig. 1 is a circuit layout structure diagram of an LED chip according to a first preferred embodiment of the invention.
Fig. 2 is a graph showing the relationship between the internal quantum efficiency and the current of the LED chip according to the first preferred embodiment of the present invention.
Fig. 3 shows experimental LED photoelectric parameters of the LED chip according to the first preferred embodiment of the present invention.
Fig. 4 is a schematic diagram of a chip module of the LED chip according to the first preferred embodiment of the invention.
Fig. 5A and 5B are schematic structural diagrams of an LED lamp according to the present invention.
FIG. 6 is a method diagram of a method of operating an LED lamp according to the present invention.
Detailed Description
The following description is provided to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art. The basic principles of the invention, as defined in the following description, may be applied to other embodiments, variations, modifications, equivalents, and other technical solutions without departing from the spirit and scope of the invention.
It will be understood by those skilled in the art that in the present disclosure, the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship indicated in the drawings for ease of description and simplicity of description, and do not indicate or imply that the referenced devices or components must be constructed and operated in a particular orientation and thus are not to be considered limiting.
It is understood that the terms "a" and "an" should be interpreted as meaning that a number of one element or element is one in one embodiment, while a number of other elements is one in another embodiment, and the terms "a" and "an" should not be interpreted as limiting the number.
Fig. 1 to 6 show an LED chip and an LED lamp with the LED chip according to the preferred embodiment of the present invention. The LED chip can effectively control junction temperature of the PN junction, so that the LED works at a lower temperature, internal quantum efficiency and external quantum efficiency of the LED chip are improved, light output of the LED can be effectively improved, and stability of the LED in a long-term working process is improved.
Specifically, the LED die comprises a circuit carrier 10 and at least one die module 20 disposed on the circuit carrier 10, wherein the die module 20 is soldered to the circuit carrier 10, and each die module 20 is electrically connected to the circuit carrier 10, and each die module 20 is connected to the circuit carrier 10 as an electrically conductive integral structure. Preferably, in the preferred embodiment of the present invention, the circuit carrier 10 is implemented as a circuit board, wherein the chip modules 20 are soldered to one side of the circuit board, and the chip modules 20 are electrically connected in series and/or in parallel through the circuit board 10.
The circuit carrier 10 includes a carrier body 11 and at least one circuit structure 12 disposed on the carrier body 11, wherein the chip modules 20 are soldered on a surface of the carrier body 11, and each chip module 20 is electrically connected to the circuit structure 12, and the circuit structure 12 is electrically connected in a conductive manner. The circuit structure 12 is disposed on the carrier body 11, and each of the chip modules 20 is carried by the carrier body 11, wherein the carrier body 11 is formed by placing an LED chip on an associated supporting material.
The circuit carrier 10 further includes at least one positive terminal 13 and at least one negative terminal 14, wherein the positive terminal 13 and the negative terminal 14 are connected to the carrier body 11, and the at least one positive terminal 13 and the at least one negative terminal 14 are electrically conductively connected to each of the chip modules 20 through the circuit structure 12. By way of example, in the preferred embodiment of the present invention, the number of the positive terminals 13 and the negative terminals 14 is one, that is, the chip modules 20 are connected into an integral chip module unit by the circuit carrier 10. In other alternative embodiments of the present invention, the number of the positive terminals 13 and the negative terminals 14 of the circuit carrier 10 may be two or more, that is, different chip module units are composed of different positive terminals 13 and/or different negative terminals 14 of the circuit carrier 10.
For example, in other alternative embodiments of the present invention, the negative terminals include a first negative terminal 14a and a second negative terminal 14b, where the first negative terminal 14a and the positive terminal 13 form a first circuit module, and the second negative terminal 14b and the positive terminal 13 form a second circuit module. It is understood that the first circuit block and the second circuit block may be different types of chip module units.
Therefore, the specific manner of the circuit is only used as an example and not a limitation, and in other alternative embodiments of the present invention, the circuit structure 12 of the circuit carrier 10 may be replaced with other types.
Preferably, in the preferred embodiment of the present invention, the chip modules 20 are soldered to the carrier body 11 of the circuit carrier 10 in an array. As an example, in the preferred embodiment of the present invention, the number of the chip modules 20 is Y — PQ, that is, the chip modules 20 are P-serial-Q parallel array modules. It will be understood by those skilled in the art that the arrangement of the chip modules 20 is shown here by way of example only and not by way of limitation. In other alternative embodiments of the present invention, the chip modules may also be implemented in a non-array manner, i.e., in a serial and/or parallel manner in any permutation and combination.
It is understood that an external power source is electrically conducted to the chip module 20 through the positive terminal 13 and the negative terminal 14 of the circuit carrier 10. The die module 20 further includes at least one die unit 21, wherein the die unit 21 is soldered to the carrier body 11 of the circuit carrier 10 and electrically connected to the circuit structure. The chip unit 21 has a rated operating current I, that is, the forward circuit of the chip unit 21 is the rated operating current I when the chip unit 21 operates in a rated voltage environment.
In the present invention, the number of the chip units 21 of the chip module 20 is greater than or equal to 1, that is, the number of the chip units 21 per chip module 20 may be one or more. When the number of the chip units 21 is two or more, the chip units 21 of the chip module 20 are connected in series and/or in parallel to form a module whole. As an example, in the preferred embodiment of the present invention, one chip module 20 includes S ═ XY chip units 21, where the chip units 21 are connected in an X-serial-Y-parallel manner. It is understood that X.gtoreq.1 and Y.gtoreq.1 are used in the present invention. It will be understood by those skilled in the art that the arrangement of the chip units 21 in the chip module 20 is only exemplary and not limiting. Preferably, the chip units 21 of the chip module 20 are arranged in an array.
As will be appreciated by those skilled in the art, when the LED light fixture is electrically turned on, the LED chips of the LED light fixture operate to generate heat, which causes the temperature of the LED light fixture to increase. The working temperature of the LED chip can be kept relatively stable along with heat dissipation and ambient temperature, the LED chip of the LED lamp can work according to a set working mode, the working temperature is effectively reduced, and the LED efficiency is improved.
When the LED lamp is electrically conducted, the positive terminal 13 and the negative terminal 14 of the LED chip are electrically conducted to form a circuit, wherein the positive terminal 13 inputs a forward current, and each chip unit 21 of each chip module 20 is conducted by the circuit structure 12. More specifically, the working principle and the beneficial effects of the LED chip working current control device of the LED chip of the present invention that the current is lower than the rated forward current of the LED chip when the LED chip works are specifically disclosed below.
One of the most important criteria for measuring the performance of an LED light source is LED efficiency, as will be appreciated by those skilled in the art. The main describing LED efficiency are injection efficiency, internal quantum efficiency, extraction efficiency, external quantum efficiency and luminous efficiency.
The injection efficiency is the ratio of the current injected into the active region (i.e., the number of electrons) to the total current (the total number of electrons passing through the LED), i.e., the injection efficiency is the number of electrons in the active region/the total number of electrons. The injection efficiency is related to the doping concentration of P-type and N-type materials, and also to the diffusion coefficient and mobility of carriers in the materials. The electron holes injected into the active region recombine in the active region, including radiative recombination and non-radiative recombination. Radiative recombination results primarily from interband transitions, exciton recombination, or recombination at impurity centers, among others. The non-radiative recombination includes recombination involving impurities and defects, auger recombination, surface recombination caused by surface states, and the like. When electrons and holes undergo non-radiative recombination, the radiated energy is given off as heat, rather than as photons. Obviously, the LED as a light emitting device should improve the radiative recombination probability and reduce the non-radiative recombination probability as much as possible. The internal quantum efficiency refers to the ratio of the number of electron-hole pairs undergoing radiative recombination in the active region to the total number of electron-hole pairs in the active region, i.e., the internal quantum efficiency is the number of radiative recombination electron-hole pairs/the number of active region electron-hole pairs.
When an electron hole emits a photon by radiative recombination in the active region, not all photons escape from the bulk of the material into the air. Because of a plurality of interfaces in the LED epitaxial structure, photons can be reflected for a plurality of times in the LED body, and the photons can smoothly escape into the air only within a proper angle. The angle of the escape cone is calculated to be very small. I.e. only a small fraction of the photons generated in the active region can escape into the air and contribute to the emission of light by the LED. The light extraction efficiency is the ratio of the number of photons escaping to the total number of photons generated by the active region. According to the above description, the total number of photons generated by the active region is the number of electrons participating in radiative recombination. The light extraction efficiency is thus the number of escaping photons/number of radiation recombination electrons.
The external quantum efficiency is the ratio of the number of photons that are eventually emitted from within the LED material into the air to the total number of electrons injected into the LED, and is determined by the following equation: external quantum efficiency is injection efficiency x internal quantum efficiency x light extraction efficiency. The formula for the external quantum efficiency is expressed as follows,
Figure RE-GDA0003595808740000081
wherein n isqNumber of photons generated per unit time in the active region, neThe number of electron-hole pairs injected into the active region per unit time is shown, P is the output optical power of the LED chip, hc is the energy of a single photon, gamma is the light-emitting wavelength, and I is the forward working current. According to the formula, the LED chip working current control device of the LED chip controls the reduction of the forward working current, and can effectively improve the external quantum efficiency of the LED.
Another important factor for external quantum efficiency is light extraction efficiency. The current LED chip is used to improve light extraction efficiency, and has several methods, such as (1) using a patterned sapphire substrate; (2) a P-type surface roughening technology; (3) ITO hollowing technology; (4) current Blocking Layer design (CBL); (5) and plating a high-reflection film on the back of the chip.
The heat generated by the LED during operation is mainly divided into two types: (a) after the electrons and the holes are recombined, energy is released, the release form of the energy is divided into radiation and non-radiation, one part of the energy is released in the radiation form to generate light, and the other part of the energy is released in the non-radiation form to cause the lattice vibration of the semiconductor material, namely the energy is converted into heat; (b) electrons encounter resistance during their migration in semiconductors, which generates joule heat Q ^2 ^ R ^ t. Whereas the light output of LEDs is very sensitive to temperature: the concentration of electrons and holes is increased, the forbidden bandwidth is reduced, and the electron mobility is reduced when the temperature is increased; the temperature rises, the radiative recombination probability of electrons and holes in the potential well is reduced, and non-radiative recombination (heat generation) is caused, so that the internal quantum efficiency of the LED is reduced; the temperature rise causes the blue light wave crest of the chip to shift towards the long wave direction, so that the emission wavelength of the chip is not matched with the excitation wavelength of the fluorescent powder, and the external light extraction efficiency of the white light LED is also reduced; as the temperature rises, the quantum efficiency of the fluorescent powder is reduced, the light emission is reduced, and the external light extraction efficiency of the LED is reduced; the performance of silica gel is greatly influenced by the ambient temperature. Along with the temperature rise, the thermal stress in the silica gel is increased, so that the refractive index of the silica gel is reduced, and the LED lighting effect is influenced.
That is, when the ambient temperature is low or the LED chip operating current is small, the light output of the LED may increase; when the ambient temperature is too high or the working current of the LED chip is too large, the temperature of the LED chip can be increased, so that the light output of the LED chip is reduced, at the moment, the microscopic parameters such as electrons, hole concentration, forbidden band width, electron mobility and the like in the PN junction can be changed, the internal quantum efficiency and the external quantum efficiency of the LED efficiency are reduced, and the light output of the LED is influenced.
As shown in fig. 2 and 3, when the current of the LED chip increases, the internal quantum efficiency of the chip unit 21 increases with the increase of the operating current, and when the current increases to a certain degree, the internal quantum efficiency of the chip unit 21 decreases with the increase of the operating current. That is, the chip unit 21 of the LED chip does not increase with an increase in current. Therefore, by controlling the magnitude of the current value of the forward operating current of the chip unit 21, the internal quantum efficiency of the LED chip can be effectively improved. That is, in the preferred embodiment of the present invention, the forward operating current of the chip unit 21 is controlled to be lower than 69.8% of the rated operating current, so as to improve the internal quantum efficiency of the LED chip.
As shown in fig. 3, in the preferred embodiment of the present invention, the LED lamp is a high luminous efficiency lamp, and when the luminous efficiency of the LED lamp exceeds 200lm/W, the lamp can have high luminous efficiency. That is, in the preferred embodiment of the present invention, the LED lamp realizes the effect of high light efficiency by controlling the operating current thereof.
The LED chip can effectively control the junction temperature of the PN junction, so that the LED works at a lower temperature, the internal quantum efficiency and the external quantum efficiency of the LED chip are improved, the light output of the LED can be effectively improved, and the stability of the LED in the long-term working process is improved. The LED works at a lower temperature, so that the aging of the LED caused by high temperature can be avoided. Specifically, the transparent epoxy resin is denatured and yellowed at high temperature, the transparency of the transparent epoxy resin is reduced, the packaging material is easily carbonized under the condition of large current, and a conductive channel is formed around the device, so that the device is failed; the high temperature of the PN junction causes a red shift in the spectral wavelength of the LED. The fluorescent powder can also be degraded under the heat effect, so that the excited light spectral region of the fluorescent powder is not matched with the light-emitting spectral region of the chip, and the part of the fluorescent powder which absorbs light but does not emit light is increased. The light excited by the phosphor is reduced, resulting in failure. The opacity of the phosphor causes a significant amount of scattering of light and also provides a barrier to light. Excessive temperatures are a significant cause of degradation of the packaging material. When the temperature of the chip is too high and the temperature of the epoxy resin used for the LED package is close to the junction temperature of the chip, the thermal expansion coefficient of the epoxy resin may change dramatically, and the generated internal stress and the vapor pressure of moisture are likely to be greater than the adhesive force between the package resin and the chip, the die attach adhesive and the frame surface, so that the peeling phenomenon occurs between the interfaces of the package resin and the chip, and the package resin or the chip may crack in severe cases.
By way of example, in a preferred embodiment, a circuit design structure diagram of the LED light source package module device of the LED chip is implemented as shown in fig. 1. Wherein x and y are arranged in the LED chip, and the values of x and y are both more than 1; p and Q are modularized LED modules, and the values of P and Q are both larger than 1, so that the high power of the LED is met. More specifically, in this preferred embodiment of the invention, x is 2, y is 2, P is 3, and Q is 3. That is, in this embodiment, by way of example, the LED chips of the LED chips are arranged such that 2 LED chips are connected in series in a row in the transverse direction and 2 LED chips are connected in parallel in a row in the longitudinal direction; further, the LED module comprises 9 LED chip arrangement groups, wherein 3 LED chip arrangement groups are transversely connected in series to form a row, and 3 LED chip arrangement groups are longitudinally connected in parallel to form a column. Externally driven current flows in from "+", and "out. It is to be understood that the foregoing quantities are exemplary only, and that the invention is not so limited.
When the LED lamp is turned on, a forward current is input to the circuit structure 12 from the positive terminal 13 of the LED chip, and then the circuit structure electrically connects the chip modules 20, wherein a working current of each chip unit 21 of the chip module 20 is lower than 69.8% of a rated current, and heat generated by the operation of each chip unit 20 is reduced by reducing the working current of the chip unit 21, so that an operating temperature of the LED chip is reduced, and internal quantum efficiency and external quantum efficiency of the LED chip are improved.
It should be noted that in the preferred embodiment of the present invention, the operating current of the chip unit 20 is controlled to be lower than 69.8% of the rated current by controlling the input current or the input voltage, so as to reduce the operating temperature of the LED chip; or under the condition that the input current (forward input current) or the working voltage of the LED chip is kept unchanged, the arrangement of the chip modules 20 of the LED chip or the arrangement of the chip units 21 of the chip modules 20 is set, so that the working current flowing through each chip unit 21 by the circuit structure 12 of the circuit carrier 10 is lower than 69.8% of the rated current, thereby reducing the working temperature of the LED chip.
It is worth mentioning that, further, the LED chip can control the current of the LED during operation to be lower than 69.8% of the rated forward current of the LED chip. Therefore, the current of the LED during working is controlled more strictly in precision, the LED chip is prevented from working at an overhigh temperature, the junction temperature of a PN junction is controlled more effectively, the LED works at a lower temperature, the internal quantum efficiency and the external quantum efficiency of the LED chip are improved, the light output of the LED can be effectively improved, and the stability of the LED in a long-term working process is improved.
Besides improving the lattice coefficient matching design of the LED chip, in practical applications, the LED chip is strictly controlled to operate at an excessively high temperature (related studies show that the service life of the LED chip is halved for every 10 ℃ rise in temperature). The LED chip is lower than the rated forward current of the LED chip, preferably is reduced to be lower than 69.8% of the rated forward current of the LED chip, the junction temperature of a PN junction can be effectively controlled, so that the LED works at a lower temperature, the internal quantum efficiency and the external quantum efficiency of the LED chip are improved, the light output of the LED is effectively improved, and the stability of the LED in a long-term working process is improved.
The LED chip has a current set value IIs provided withThat is, when the LED lamp is turned on, the current value input by the positive terminal or the current value output by the negative terminal of the LED chip is the current setting value IIs provided withWhen the LED lamp works, the working current of each chip unit 21 of the LED chip is lower than 69.8% of the rated forward current of the LED chip, which not only can effectively improve the internal quantum efficiency and the external quantum efficiency of the LED chip, but also can reduce the heat generated by the LED chip, thereby reducing the working temperature of the LED chip. In short, in the preferred embodiment of the present invention, the operating current of the LED chip is controlled to be lower than 69.8% of the rated forward current of the LED chip, so as to improve the internal quantum efficiency and the external quantum efficiency of the LED chip, effectively improve the light output of the LED, and effectively reduce the operating temperature of the LED chip, thereby improving the stability of the LED during long-term operation. Preferably, in the preferred embodiment of the present invention, when the LED lamp operates, the operating current of each chip unit 21 of the LED chip is lower than 45% of the rated forward current of the LED chip, which not only can better improve the internal quantum efficiency and the external quantum efficiency of the LED chip, but also can reduce the heat generated by the operation of the LED chip, thereby reducing the operating temperature of the LED chip.
As will be understood by those skilled in the art, when the LED lamp is electrically conducted, the operating current of the LED chip is lower than 69.8% of the rated forward current, and the LED lamp can emit light normally, i.e., the operating current of the LED chip is not less than the operating current of the LED chip emitting light normally. That is, the chip unit 21 of the LED chip is further provided with a minimum operating current, wherein the operating current of the LED chip is lower than 69.8% of the rated forward current and exceeds the minimum operating current when the LED chip is in normal operation, i.e., when the LED lamp is turned on. By way of example, in the preferred embodiment of the present invention, the minimum operating current of the LED chip is 2% -8% of the rated current to maintain normal illumination of the LED lamp. More preferably, in the preferred embodiment of the present invention, the forward current of the operation of each chip unit of the LED chip is 8% to 45% of the rated current of the chip unit 21, which can ensure that the LED lamp has high luminous efficiency, wherein the luminous efficiency of the LED lamp can be greater than 230lm/W, and can also reduce the operating temperature of the LED chip.
According to another aspect of the present invention, the present invention further provides an LED lamp, wherein the LED lamp includes a circuit board 100, at least one LED chip 200 disposed on the circuit board 100, and a plurality of beads 300, wherein the plurality of beads 300 and the at least one LED chip 200 are electrically connected through the circuit board 100. Preferably, the at least one LED chip 200 and the plurality of beads 300 are distributed on both sides of the circuit board 100. The circuit board 100 has a front side and a back side opposite to the front side, wherein the at least one LED chip 200 is disposed on the back side of the circuit board 100, and the plurality of beads 300 are disposed on the front side of the circuit board 100.
It should be noted that, in the preferred embodiment of the present invention, the LED lamp further includes at least one lamp body and a heat dissipation mechanism (not shown), wherein the circuit board 100, the LED chip and the lamp bead 300 of the LED lamp are combined into an integrated structure, and the circuit board 100, the LED chip and the lamp bead 300 are integrally mounted on the lamp body of the LED lamp, and the chip inside is supported and protected by the lamp body, wherein the heat dissipation mechanism is connected with the LED chip of the LED lamp, and the heat generated by the LED lamp is conducted by the heat dissipation mechanism to reduce the operating temperature of the LED chip 200.
It should be noted that the structure and performance of the LED chip 200 of the LED lamp are the same as those of the LED chip of the above preferred embodiment, and are not repeated herein.
According to another aspect of the present invention, there is also provided an operating method of an LED chip, wherein the operating method includes the steps of:
inputting a forward working current to a positive terminal 13 of an LED chip; and
at least one chip unit 21 of at least one chip module 20 is electrically connected via a circuit structure 12 of the LED chip, wherein the operating current of the chip unit 21 is lower than 69.8% of the rated operating current, in order to reduce the heat generated by the operation of the LED chip and to increase the light output efficiency of the LED.
It will be appreciated by persons skilled in the art that the embodiments of the invention described above and shown in the drawings are given by way of example only and are not limiting of the invention. The objects of the present invention have been fully and effectively accomplished. The functional and structural principles of the present invention have been shown and described in the examples, and any variations or modifications of the embodiments of the present invention may be made without departing from the principles.

Claims (10)

1. An LED chip adapted for an LED lamp, comprising:
a circuit carrier; and
at least one chip module, wherein the at least one chip module is disposed on the circuit carrier, and each chip module is electrically connected to the circuit carrier, and the circuit carrier connects each chip module to form an electrically conductive integrated structure, wherein the chip module comprises at least one chip unit, and the chip unit has a rated operating current, so that when the LED lamp is turned on, the forward operating current of the chip unit of the LED lamp is lower than 69.8% of the rated forward current of the LED chip, so as to reduce the heat generated by the operation of the LED chip and increase the light output of the LED chip.
2. The LED die of claim 1 wherein said circuit carrier comprises a carrier body and at least one circuit structure disposed on said carrier body, wherein said die modules are soldered to a surface of said carrier body and each of said die modules is electrically connected to said circuit structure through which an electrical continuity is achieved.
3. The LED chip of claim 2, wherein said circuit carrier further comprises at least one positive terminal and at least one negative terminal, wherein said positive terminal and said negative terminal are connected to said carrier body, and said at least one positive terminal and said at least one negative terminal are electrically conductively connected to each of said chip modules through said circuit structure.
4. The LED die of claim 3 wherein the die modules are soldered in an array to the carrier body of the circuit carrier.
5. The LED chip of claim 4, wherein the number of the chip modules is Y-PQ, i.e., the chip modules are P-serial-Q parallel array modules.
6. The LED chip of claim 4, wherein said chip module comprises S-XY said chip units, wherein said chip units are connected in X-series and Y-parallel.
7. An LED lamp, comprising:
a circuit board, set up in at least an LED chip and a plurality of lamp pearl of circuit board, wherein a plurality of lamp pearls with at least an LED chip passes through the circuit board realizes electrical connection, wherein the LED chip includes:
a circuit carrier; and
at least one chip module, wherein the at least one chip module is disposed on the circuit carrier, and each chip module is electrically connected to the circuit carrier, and the circuit carrier connects each chip module to form an electrically conductive integrated structure, wherein the chip module comprises at least one chip unit, and the chip unit has a rated operating current, so that when the LED lamp is turned on, the forward operating current of the chip unit of the LED lamp is lower than 69.8% of the rated forward current of the LED chip, so as to reduce the heat generated by the operation of the LED chip and increase the light output of the LED chip.
8. The LED light fixture of claim 7 wherein the circuit carrier includes a carrier body and at least one circuit structure disposed on the carrier body, wherein the die modules are soldered to a surface of the carrier body and each die module is electrically connected to the circuit structure through which an electrical continuity is achieved.
9. The LED light fixture of claim 7 wherein the at least one LED chip and the plurality of beads are distributed on two sides of the circuit board, the circuit board having a front side and a back side facing away from the front side, wherein the at least one LED chip is disposed on the back side of the circuit board and the plurality of beads are disposed on the front side of the circuit board.
10. An operating method of an LED lamp, wherein the operating method comprises the following steps:
inputting a forward working current to a positive terminal of an LED chip; and
at least one chip unit of at least one chip module is electrically conducted through a circuit structure of the LED chip, wherein the operating current of the chip unit is lower than 69.8% of the rated operating current, so as to reduce the heat generated by the operation of the LED chip and improve the light output efficiency of the LED.
CN202111185380.7A 2021-10-11 2021-10-11 LED chip, LED lamp and working method Pending CN114520215A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111185380.7A CN114520215A (en) 2021-10-11 2021-10-11 LED chip, LED lamp and working method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111185380.7A CN114520215A (en) 2021-10-11 2021-10-11 LED chip, LED lamp and working method

Publications (1)

Publication Number Publication Date
CN114520215A true CN114520215A (en) 2022-05-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111185380.7A Pending CN114520215A (en) 2021-10-11 2021-10-11 LED chip, LED lamp and working method

Country Status (1)

Country Link
CN (1) CN114520215A (en)

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