CN114497278B - PECVD-based TOPCon battery boron-expanded SE manufacturing method - Google Patents
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 90
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 89
- 239000010703 silicon Substances 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 50
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052796 boron Inorganic materials 0.000 claims abstract description 34
- 230000008569 process Effects 0.000 claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims abstract description 20
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N hydrofluoric acid Substances F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 15
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- 238000005530 etching Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims description 6
- 238000004804 winding Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 229910017107 AlOx Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
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- 239000013078 crystal Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
The application relates to a manufacturing method of a TOPCON battery boron-expanded SE based on PECVD, which comprises the following steps: s1: providing a silicon substrate, and performing texturing processing on the silicon substrate; s2: manufacturing a barrier oxide layer and an in-situ heavily doped P-poly layer on a silicon substrate by adopting a PECVD in-situ deposition process; s3: propelling boron in the P-poly layer into a fine gate region of the silicon substrate by using laser to form a heavily doped region; s4: removing the P-poly layer by wet cleaning; s5: the boron expansion of the silicon substrate adopts light expansion to achieve the purpose of SE. The SE prepared by the process method has an obvious lightly-doped region, the sheet resistance and junction depth of the SE region can be conveniently adjusted without affecting too much productivity, the processing implementation property is strong, the cost is low, the P-poly layer grown by adopting the PECVD in-situ doping mode has the characteristics of high doping and high cleanliness, the impurity content is low, the pollution is not introduced like the boron slurry and other methods, and the service performance of the TOPCO battery after processing can be ensured.
Description
Technical Field
The application relates to the technical field of production and manufacturing of crystalline silicon solar cells, in particular to a manufacturing method of a TOPCON cell boron-expanded SE based on PECVD.
Background
TOPCON cell technology (large area N-type single crystal passivation contact technology) proposed by the Germany scientist in 2013, which is critical to the adoption of chemical wet oxidation and high concentration HNO 3 Oxidation is carried out, firstly, a tunneling oxide layer SiOx with the thickness of 1.4nm is grown on the back of the battery, then, a phosphorus doped n+ -poly-Si film is deposited, and after high-temperature annealing, the back composite current can be effectively reducedDensity. Compared with other traditional solar cells, the TOPCon solar cell can obviously improve the photoelectric conversion efficiency of the solar cell, and the TOPCon solar cell market in China already occupies a certain market share at present, and a plurality of photovoltaic enterprises can independently develop and produce in quantity. Therefore, the TOPCon battery technology has extremely high industrialization value.
SE (selective emitter; selective emitter) has been a further challenge in TOPCon battery technology, but the conventional "diffusion-laser propulsion" approach cannot achieve the SE goal due to its inherent difficulty. The main reason is that the BSG (borosilicate glass) is thick after boron expansion, and the boron in the BSG is mainly distributed on the upper surface, and the BSG boron content near the silicon wafer is low. The method using boron paste introduces dirt, and is clearly a disaster for the high-efficiency battery process. Therefore, at present, no simple and mature process is adopted for carrying out boron amplification SE, so that the efficiency and cost reduction of the TOPCO battery become a great problem.
Disclosure of Invention
Based on the above, it is necessary to provide a method for manufacturing the boron-expanded SE of the TOPCON battery based on PECVD, which aims to solve the problems of high processing difficulty, poor feasibility, high cost and influence on the battery performance caused by introducing dirt in the prior art.
The application provides a manufacturing method of a TOPCON battery boron-expanded SE based on PECVD, which comprises the following steps:
s1: providing a silicon substrate, and performing texturing processing on the silicon substrate;
s2: manufacturing a barrier oxide layer and an in-situ heavily doped P-poly layer on the silicon substrate by adopting a PECVD in-situ deposition process;
s3: propelling boron in the P-poly layer into a fine gate region of the silicon substrate by using laser to form a heavily doped region;
s4: removing the P-poly layer by wet cleaning;
s5: and the boron expansion of the silicon substrate is light expansion, so that the purpose of SE is achieved.
When the TOPCON battery boron-expanded SE is manufactured by adopting the scheme, firstly providing a silicon substrate, and performing texturing processing on the silicon substrate; then, a PECVD in-situ deposition process is adopted to manufacture a barrier oxide layer and an in-situ heavily doped P-poly layer on the silicon substrate; then adopting laser to push boron in the P-poly layer into a fine gate region of the silicon substrate so as to form a heavily doped region; removing the P-poly layer by wet cleaning; and finally, performing light expansion on the boron expansion of the silicon substrate to achieve the purpose of SE. Compared with the prior art, the SE prepared by the process method has an obvious lightly doped region, the sheet resistance and junction depth of the SE region can be conveniently adjusted without affecting too much productivity, the processing implementation property is strong, the cost is low, the P-poly layer grown by adopting the PECVD in-situ doping mode has the characteristics of high doping and high cleanliness, the impurity content is low, the cleanliness is high, the pollution is not introduced like boron slurry and other methods, and the service performance of the TOPCO battery after processing can be ensured.
The technical scheme of the application is further described as follows:
in one embodiment, in the step S1, the silicon substrate is an N-type silicon wafer, and the N-type silicon wafer is cleaned with alkali solution to form corrugated suede on the front and back of the N-type silicon wafer.
In one embodiment, in the step S2, N is introduced into the silicon substrate by a PECVD process 2 O and SiH 4 And depositing to form the barrier oxide layer, wherein the thickness of the barrier oxide layer is 1 nm-10 nm.
In one embodiment, in the step S2, siH is introduced into the silicon substrate by a PECVD process 4 、BH 3 And H 2 And depositing to form the P-poly layer heavily doped with boron in situ.
In one embodiment, in step S3, a nanosecond laser or a picosecond laser is used to drive boron in the P-poly layer into a fine gate region of the silicon substrate to form a heavily doped region.
In one embodiment, in the step S4, a trench type alkali etching cleaner is used to remove the P-poly layer on the front and back sides of the silicon substrate by using an alkali etching process, in which the barrier oxide layer is used as a mask on the front side of the silicon substrate, and after the alkali etching is completed, HF cleaning is used to remove the mask.
In one embodiment, in the step S5, the silicon substrate is placed in a boron diffusion furnace, and BCl is used 3 And diffusing at 900-1000 deg.c to form light expansion region p-n junction.
In one embodiment, after the step S5, the method further includes a step S6 of performing an alkali polishing process on the silicon substrate, specifically removing BSG of the back surface boron degree of the silicon substrate by using a chain hydrofluoric acid machine, transferring the silicon substrate into a groove alkali polishing machine by using a manipulator, removing p-n junctions on the back surface and the edge of the silicon substrate by using the groove alkali polishing machine, and retaining the front surface BSG.
In one embodiment, after the step S6, the method further includes a step S7 of preparing an N-poly back passivation film on the silicon substrate, performing a de-winding plating and cleaning process, specifically growing an N-poly layer on the back surface of the silicon substrate, annealing, and then performing a passivation process; and then, firstly, carrying out chained hydrofluoric acid (HF) on the silicon substrate, removing the barrier oxide layer which is wound and plated to the front surface and the edge during the deposition in the step S6, and then, transferring the silicon substrate into an alkali tank to remove the front surface poly winding coating.
In one embodiment, after the step S7, the method further includes a step of plating at least an AlOx film and a SiNx film on the silicon substrate, and finally performing screen printing to obtain the TOPCon battery.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application.
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a flow chart of steps of a method for fabricating a TOPCon battery boron-expanded SE based on PECVD according to an embodiment of the present application;
fig. 2 is a schematic of the processing of a TOPCon battery.
Reference numerals illustrate:
10. a silicon substrate; 20. suede; 30. a P-poly layer; 40. a barrier oxide layer; 50. winding plating; 60. a heavily doped region; 70. BSG; 80. and (5) a light expansion region.
Detailed Description
In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. The present application may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the application, whereby the application is not limited to the specific embodiments disclosed below.
As shown in fig. 1, a method for manufacturing a TOPCon battery boron-expanded SE based on PECVD according to an embodiment of the application includes the following steps:
s1: a silicon substrate 10 is provided and the silicon substrate 10 is subjected to a texturing process.
S2: a barrier oxide layer 40 and an in-situ heavily doped P-poly layer 30 are fabricated on the silicon substrate 10 using a PECVD in-situ deposition process.
S3: boron in the P-poly layer 30 is driven into the fine gate region of the silicon substrate 10 using a laser to form a heavily doped region 60.
S4: and removing the P-poly layer by adopting wet cleaning.
S5: the boron expansion of the silicon substrate 10 is performed by adopting light expansion, so as to achieve the purpose of SE.
In summary, implementing the technical scheme of the embodiment has the following beneficial effects: when the TOPCON battery boron-expanded SE is manufactured by adopting the scheme, firstly providing a silicon substrate 10, and performing texturing processing on the silicon substrate 10; then, a PECVD in-situ deposition process is adopted to manufacture a barrier oxide layer 40 and an in-situ heavily doped P-poly layer 30 on the silicon substrate 10; boron in the P-poly layer 30 is then driven into the fine gate region of the silicon substrate 10 using a laser to form a heavily doped region 60; removing the P-poly layer by wet cleaning; and finally, performing light diffusion on the boron diffusion of the silicon substrate 10 to achieve the purpose of SE. Compared with the prior art, the SE prepared by the process method has an obvious lightly doped region, the sheet resistance and junction depth of the SE region can be conveniently adjusted without affecting too much productivity, the processing implementation property is strong, the cost is low, the P-poly layer 30 grown by adopting the PECVD in-situ doping mode has the characteristics of high doping and high cleanliness, the impurity content is low, the cleanliness is high, dirt is not introduced like boron slurry and other methods, and the service performance of the TOPCO battery after processing can be ensured.
The tunneling oxide passivation contact solar cell (Tunnel Oxide Passivated Contact solar cell, TOPCon) is a novel passivation contact solar cell which is first proposed by Fraunhofer solar institute in 28 th European PVSEC photovoltaic society in 2013, and is characterized in that a tunneling oxide layer with the thickness of 1-2 nm is firstly prepared on the back of the cell, then a doped polysilicon layer is deposited, and the tunneling oxide layer and the doped polysilicon layer form a passivation contact structure together, so that good interface passivation is provided for the back of a silicon wafer.
The TOPCon passivation contacts the silicon oxide between the Poly-Si and Si substrate interface of the battery plays a very critical role in passivation, the silicon oxide reduces the interface state density between the Si substrate and the Poly-Si through chemical passivation, the majority carrier concentration is far higher than the minority carrier, and the selective contact of the majority carrier is also increased when the electron hole recombination probability is reduced. In the selective contact area, the multi-photon transmission causes resistance loss, and at the same time, a small amount of minority carriers migrate to the metal contact area to cause recombination loss, wherein the former corresponds to contact resistance ρc, the latter corresponds to interface recombination J0, the current J0 is as low as 2fA/cm < 2 >, pc is as low as 1mΩ/cm < 2 >, n+ Poly passivation contact is carried out, voc is as high as 733mv, voc of the battery breaks through more than 720mv, the current highest efficiency is 25.4%, and the theoretical ultimate efficiency of the TOPCO battery is 28.7% according to ISFH measurement.
Diffusion is one of key processes in solar cell production, and diffusion depth, diffusion concentration and distribution thereof can be controlled by adjusting time, temperature and atmosphere, so that the square resistance and uniformity of a diffusion area of a solar cell sheet can meet industrial use requirements.
The diffusion process of the solar cell in industrial production mainly comprises phosphorus diffusion and boron diffusion, the phosphorus diffusion has good repeatability and high stability, and the produced cell can meet the industrial mass production requirement, so that the phosphorus diffusion becomes the main stream process of the current commercial production of the solar cell, but the space for improving the industrial conversion efficiency of the p-type common monocrystalline silicon cell is very limited. Compared with the conventional p-type monocrystalline silicon, the n-type monocrystalline silicon has the advantages of long minority carrier lifetime, no light decay and the like, and has larger efficiency improvement space. Meanwhile, the n-type single crystal component has the advantages of good weak light response, low temperature coefficient and the like, and the corresponding n-type single crystal solar cell has the advantages of high power generation amount, low attenuation and the like, so that the n-type cell research and development are receiving more and more attention.
With continued reference to fig. 2, in some embodiments, in the step S1, the silicon substrate 10 is an N-type silicon wafer, and the N-type silicon wafer is cleaned with an alkali solution to form a corrugated texture 20 on the front surface and the back surface of the N-type silicon wafer. This greatly increases the surface area of pile 20 and the formation of a relief structure helps to improve the stability of the media adhesion.
In some embodiments, in the step S2, N is introduced into the silicon substrate 10 by a PECVD process 2 O and SiH 4 And depositing to form the barrier oxide layer 40, wherein the thickness of the barrier oxide layer 40 is 1 nm-10 nm. Using N 2 O and SiH 4 The deposition mode has no redundant impurities, can ensure the cleanliness of the barrier oxide layer 40, and avoids the influence of the introduction of dirt on the TOPCO battery performance.
In some embodiments, in the step S2, siH is introduced into the silicon substrate 10 by using a PECVD process 4 、BH 3 And H 2 The P-poly layer 30 is deposited to form in situ heavily boron doped. Using SiH 4 、BH 3 And H 2 The deposition mode has no redundant impuritiesThe presence can ensure the cleanliness of the P-poly-resistant layer 30 and avoid the influence of the introduction of dirt on the TOPCO battery performance. And the P-poly layer 30 may serve as a boron source for subsequent laser doping.
Further, on the basis of any of the above embodiments, in the step S3, the boron in the P-poly layer 30 is pushed into the fine gate region of the silicon substrate 10 using a nanosecond laser or a picosecond laser to form a heavily doped region 60. Compared with the prior art adopting expensive picosecond laser, the common picosecond laser or nanosecond laser reduces the use of electric energy, reduces the processing cost and improves the economy.
In one embodiment, in the step S4, a trench type alkali etching cleaner is used to remove the P-poly layer on the front and back sides of the silicon substrate 10 by using an alkali etching process, and in this process, the barrier oxide layer 40 is used as a mask on the front side of the silicon substrate 10, and after the alkali etching is completed, an HF cleaning is used to remove the mask. Therefore, during the etching process, the front surface of the silicon substrate 10 can rely on the barrier oxide layer 40 as a protective film, so as to avoid etching the front surface of the textured surface 20, and have a large process window.
In one embodiment, in the step S5, the silicon substrate 10 is placed in a boron diffusion furnace, using BCl 3 Diffusion is carried out at 900-1000 ℃ to form a light expansion region 80p-n junction.
In one embodiment, after the step S5, the method further includes a step S6 of performing an alkali polishing process on the silicon substrate 10, specifically removing the BSG70 of the back surface boron expansion degree of the silicon substrate 10 by using a chain hydrofluoric acid machine, transferring the silicon substrate 10 into a groove alkali polishing machine by using a manipulator, removing the p-n junction on the back surface and the edge of the silicon substrate 10 by using the groove alkali polishing machine, and retaining the front surface BSG70.
In one embodiment, after the step S6, the method further includes a step S7 of forming an N-poly back passivation film on the silicon substrate 10, performing a de-winding plating 50 and a cleaning process, specifically growing an N-poly layer on the back surface of the silicon substrate 10, annealing, and then performing a passivation process; the silicon substrate 10 is then subjected to chained hydrofluoric acid (HF) to remove the barrier oxide layer 40 from the front and edge of the deposition layer 50 in step S6, and then transferred to an alkaline bath to remove the front poly layer 50.
In one embodiment, after the step S7, the method further includes the step of plating at least an AlOx film and a SiNx film on the silicon substrate 10, and finally performing screen printing to obtain the TOPCon battery.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
It will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
Claims (10)
1. The manufacturing method of the TOPCON battery boron-amplified SE based on PECVD is characterized by comprising the following steps:
s1: providing a silicon substrate, and performing texturing processing on the silicon substrate;
s2: manufacturing a barrier oxide layer and an in-situ heavily doped P-poly layer on the silicon substrate by adopting a PECVD in-situ deposition process;
s3: propelling boron in the P-poly layer into a fine gate region of the silicon substrate by using laser to form a heavily doped region;
s4: removing the P-poly layer by wet cleaning;
s5: and the boron expansion of the silicon substrate is light expansion, so that the purpose of SE is achieved.
2. The method for fabricating the boron-amplified SE of the TOPCon battery based on PECVD according to claim 1, wherein in the step S1, the silicon substrate is an N-type silicon wafer, and the N-type silicon wafer is cleaned with alkali solution to form corrugated texture surfaces on the front surface and the back surface of the N-type silicon wafer.
3. The method for fabricating a boron-expanded SE of a TOPCon battery based on PECVD according to claim 1, wherein in the step S2, N is introduced into the silicon substrate by PECVD process 2 O and SiH 4 And depositing to form the barrier oxide layer, wherein the thickness of the barrier oxide layer is 1 nm-10 nm.
4. The method for fabricating a boron-expanded SE of a TOPCon battery based on PECVD according to claim 1, wherein in the step S2, siH is introduced into the silicon substrate by PECVD process 4 、BH 3 And H 2 And depositing to form the P-poly layer heavily doped with boron in situ.
5. The method of fabricating a TOPCon cell boron-expanded SE based on PECVD according to claim 1, wherein in step S3, a nanosecond laser or a picosecond laser is used to drive boron in the P-poly layer into a fine gate region of the silicon substrate to form a heavily doped region.
6. The method for fabricating the boron-amplified SE of the TOPCon battery based on PECVD according to claim 1, wherein in the step S4, a trench type alkali etching cleaner is used to remove the P-poly layer on the front and back sides of the silicon substrate by using an alkali etching process, in which the barrier oxide layer is used as a mask on the front side of the silicon substrate, and after alkali etching is completed, HF cleaning is used to remove the mask.
7. The method for fabricating a boron-expanded SE of a TOPCon battery based on PECVD according to claim 1, wherein in the step S5, the silicon substrate is placed in a boron diffusion furnace using BCl 3 And diffusing at 900-1000 deg.c to form light expansion region p-n junction.
8. The method for manufacturing the boron-expanded SE of the top con battery based on the PECVD according to claim 1 is characterized by further comprising the step S6 of performing alkali polishing processing on the silicon substrate after the step S5, specifically removing BSG of the back boron expansion degree of the silicon substrate by adopting a chain type hydrofluoric acid machine, transferring the silicon substrate into a groove type alkali polishing machine by using a manipulator, removing p-n junctions on the back and the edge of the silicon substrate by using the groove type alkali polishing machine, and reserving the front BSG.
9. The method for fabricating the boron-expanded SE of the TOPCon battery based on the PECVD according to claim 8, further comprising the steps of fabricating an N-poly back passivation film on the silicon substrate and performing a de-wrap plating and cleaning process, specifically, growing an N-poly layer on the back surface of the silicon substrate and annealing, and then performing a passivation process after the step S6; and then the silicon substrate is subjected to chained hydrofluoric acid (HF) and then transferred into an alkali tank to remove the front poly-winding coating.
10. The method for fabricating the boron-expanded SE of the topon battery based on the PECVD according to claim 9, further comprising the steps of plating at least an AlOx film and a SiNx film on the silicon substrate after the step S7, and finally performing screen printing to obtain the topon battery.
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