CN114496737A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 92
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 80
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 46
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000004381 surface treatment Methods 0.000 claims abstract description 26
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 25
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- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 239000001307 helium Substances 0.000 claims description 7
- 229910052734 helium Inorganic materials 0.000 claims description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 7
- 229960001730 nitrous oxide Drugs 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 235000019407 octafluorocyclobutane Nutrition 0.000 claims description 5
- LGPPATCNSOSOQH-UHFFFAOYSA-N 1,1,2,3,4,4-hexafluorobuta-1,3-diene Chemical compound FC(F)=C(F)C(F)=C(F)F LGPPATCNSOSOQH-UHFFFAOYSA-N 0.000 claims description 4
- 239000004341 Octafluorocyclobutane Substances 0.000 claims description 4
- 239000001272 nitrous oxide Substances 0.000 claims description 4
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 5
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- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229940126214 compound 3 Drugs 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 239000002994 raw material Substances 0.000 description 2
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Abstract
本公开涉及半导体技术领域,尤其涉及一种半导体器件及其制造方法。该制造方法包括:提供一包括阵列区和边缘区的基板;在基板上形成复合层,复合层包括非晶硅层和二氧化硅层,且二氧化硅层位于非晶硅层远离基板的表面;采用第一等离子体对阵列区上的二氧化硅层进行干法刻蚀,以露出阵列区上的非晶硅层的部分表面;采用第二等离子体对露出部分表面的非晶硅层进行等离子体表面处理;对等离子体表面处理后的非晶硅层和干法刻蚀后的二氧化硅层进行清洗;在基板的边缘区和阵列区上的复合层上涂布光刻胶层,并曝光、显影。该半导体器的制造方法能够使经过处理的表面层更好地与光刻胶接合,从而提高图形转移的精准度。
Description
技术领域
本公开涉及半导体技术领域,尤其涉及一种半导体器件及其制造方法。
背景技术
在半导体器件的制造过程中,光刻工艺作为图形转移的重要方法,有着广泛的应用。随着半导体器件尺寸不断缩小,光刻过程中的图形转移也要求愈加精确。目前,半导体器件制造过程中前段光刻工艺在涂覆光刻胶进行曝光时,图形转移的精准度不高,进而降低了半导体器件的品质。
所述背景技术部分公开的上述信息仅用于加强对本公开的背景的理解,因此它可以包括不构成对本领域普通技术人员已知的现有技术的信息。
发明内容
本公开的目的在于提供一种半导体器件及其制造方法,该半导体器的制造方法能够使经过处理的表面层更好地与光刻胶接合,从而提高图形转移的精准度。
为实现上述发明目的,本公开采用如下技术方案:
根据本公开的一个方面,提供一种半导体器件的制造方法,所述制造方法包括:
提供一基板,所述基板包括阵列区和边缘区;
在所述基板上形成复合层,所述复合层包括非晶硅层和二氧化硅层,所述二氧化硅层位于所述非晶硅层远离所述基板的表面;
采用第一等离子体对所述阵列区上的所述二氧化硅层进行干法刻蚀,以露出所述阵列区上的所述非晶硅层的部分表面;
采用第二等离子体对露出部分表面的所述非晶硅层进行等离子体表面处理;
对等离子体表面处理后的所述非晶硅层和干法刻蚀后的所述二氧化硅层进行清洗;
在所述边缘区和所述阵列区上的所述复合层上涂布光刻胶层,并曝光、显影。
在本公开的一种示例性实施例中,对等离子体表面处理后的所述非晶硅层和干法刻蚀后的所述二氧化硅层进行清洗,包括:
采用气体吹拂等离子体表面处理后的所述非晶硅层和干法刻蚀后的所述二氧化硅层;
采用液体对所述气体吹拂后的所述二氧化硅层和所述非晶硅层进行清洗。
在本公开的一种示例性实施例中,所述气体为氮气,所述液体为等离子水。
在本公开的一种示例性实施例中,在采用第一等离子体对所述阵列区的所述二氧化硅层进行干法刻蚀之前,所述制造方法还包括:
在腔体内对第一气体进行电离操作,以形成所述第一等离子体;所述第一气体为氧气和六氟丁二烯的混合气体或者氧气和八氟环丁烷的混合气体。
在本公开的一种示例性实施例中,在采用第二等离子体对露出的所述非晶硅层表面进行等离子体表面处理之前,所述制造方法还包括:
在所述腔体内对第二气体进行电离操作,以形成所述第二等离子体;所述第二气体为氧化二氮或氦气。
在本公开的一种示例性实施例中,在所述第二气体为氧化二氮时,所述第二气体的气体流量为4000标准毫升/分钟~6000标准毫升/分钟;
在所述第二气体为氦气时,所述第二气体的气体流量为1000标准毫升/分钟~3000标准毫升/分钟。
在本公开的一种示例性实施例中,对所述第二气体进行电离操作的射频能量的取值范围为600瓦~800瓦。
在本公开的一种示例性实施例中,所述腔体内的压力取值范围为4托~6托。
在本公开的一种示例性实施例中,所述第二气体为氖气、氩气和氧气之中的一种或多种。
根据本公开的另一个方面,提供一种半导体器件,采用上述任意一项所述的制造方法制造而成。
本公开实施方式的半导体器件及其制造方法,其中:采用第二等离子体对露出部分表面的非晶硅层进行等离子体表面处理,一方面,能够对非晶硅层表面的电荷起到中和作用,从而去除由于静电吸附的杂质颗粒;另一方面,能够处理掉非晶硅层表面的不稳定化合物,并在非晶硅层的表面形成光滑的硬质层。
随后,再对等离子体表面处理后的非晶硅层和干法刻蚀后的二氧化硅层进行清洗,由此,该制造方法改善了阵列区上非晶硅层表面和光刻胶层之间的黏附性,使得非晶硅层能够更好地与光刻胶层接合,提高了光刻过程中图形转移的精度,并避免了图案缺陷的产生,进而提高了半导体器件的品质。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分,示出了符合本公开的实施例,并与说明书一起用于解释本公开的原理。显而易见地,下面描述中的附图仅仅是本公开的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是半导体器件的结构示意图。
图2是本公开实施方式半导体器件的制造方法的流程示意图。
图3是非晶硅层表面的氢键的示意图。
图4是非晶硅层表面的杂质颗粒和不稳定化合物的示意图。
图5是本公开实施方式中采用第二等离子体对露出部分表面的非晶硅层进行等离子体表面处理的示意图。
图6是本公开实施方式中对等离子体表面处理后的非晶硅层和干法刻蚀后的二氧化硅层进行清洗的示意图。
图7是采用本公开实施方式的制造方法后光刻胶层和非晶硅层的粘结示意图。
图中:1、半导体器件;11、阵列区;12、边缘区;10、基板;101、晶圆;102、第一氮化硅层;103、碳层;104、第二氮化硅层;20、复合层;201、非晶硅层;202、二氧化硅层;30、光刻胶层;40、硅氧基硬掩模中间层;50、PR层;2、杂质颗粒;3、不稳定化合物。
具体实施方式
现在将参考附图更全面地描述示例实施例。然而,示例实施例能够以多种形式实施,且不应被理解为限于在此阐述的范例;相反,提供这些实施例使得本公开将更加全面和完整,并将示例实施例的构思全面地传达给本领域的技术人员。所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施例中。在下面的描述中,提供许多具体细节从而给出对本公开的实施例的充分理解。
所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施例中。在下面的描述中,提供许多具体细节从而给出对本公开的实施例的充分理解。然而,本领域技术人员将意识到,可以实践本公开的技术方案而没有所述特定细节中的一个或更多,或者可以采用其它的方法、组元、材料等。在其它情况下,不详细示出或描述公知结构、材料或者操作以避免模糊本公开的主要技术创意。
虽然本说明书中使用相对性的用语,例如“上”“下”来描述图标的一个组件对于另一组件的相对关系,但是这些术语用于本说明书中仅出于方便,例如根据附图中所述的示例的方向。能理解的是,如果将图标的装置翻转使其上下颠倒,则所述在“上”的组件将会成为在“下”的组件。其他相对性的用语,例如“高”“低”“顶”“底”“左”“右”等也作具有类似含义。
当某结构在其它结构“上”时,有可能是指某结构一体形成于其它结构上,或指某结构“直接”设置在其它结构上,或指某结构通过另一结构“间接”设置在其它结构上。用语“一个”、“一”、“所述”用以表示存在一个或多个要素/组成部分/等;用语“包括”和“具有”用以表示开放式的包括在内的意思并且是指除了列出的要素/组成部分/等之外还可存在另外的要素/组成部分/等。用语“第一”和“第二”等仅作为标记使用,不是对其对象的数量限制。
相关技术中,光刻工艺是半导体器件的制造过程中图形转移的重要方法,且随着半导体器件尺寸的不断缩小,光刻过程中的图形转移也要求愈加精确。然而,在实际半导体器件制造过程中,前段某道光刻工艺在涂布光刻胶之后,半导体器件的存储单元区域会产生图案缺陷,进而导致半导体器件品质不良。
如图1所示,该半导体器件1可分为阵列区11和边缘区12,该边缘区12的形状可以为圆形或方形等,此处不作特殊限定。具体而言,该半导体器件1可包括基板10、复合层20、光刻胶层30、硅氧基硬掩模中间层40和PR层50,其中:
基板10可包括晶圆101和依次叠加在晶圆101上的第一氮化硅层102、碳层103和第二氮化硅层104;基板10的表面形成有复合层20,该复合层20包括非晶硅层201和二氧化硅层202,且二氧化硅层202位于非晶硅层201远离基板10的表面,此处不再详细描述。
需要注意的是,阵列区11上的二氧化硅层202具有第一预设图案,且部分非晶硅层201的露出表面,而边缘区12上的非晶硅层201和二氧化硅层202为平整的膜层,此处不再详细描述。
另外,在边缘区12和阵列区11上的复合层20上形成有光刻胶层30,且在光刻胶层30远离基板10的表面依次形成有硅氧基硬掩模中间层40和PR层50,且PR层50具有第二预设图案。
由于图案缺陷仅集中在半导体器件1的阵列区11,半导体器件1的边缘区12则没有缺陷,而阵列区11和边缘区12的差异主要在于阵列区11上的二氧化硅层202(硬掩模层)经刻蚀工艺刻蚀出图形。
因此,推测图案缺陷的原因是刻蚀出来的非晶硅层201表面存在一定的杂质,使得光刻胶层30在旋转涂布工艺过程中不能较好地黏附在非晶硅层201上,进而降低了图形转移的精准度,并最终导致图案缺陷的产生。
为了避免上述问题,本公开实施方式中提供一种半导体器件的制造方法,如图2所示,该制造方法可包括以下步骤:
步骤S110,提供一基板,基板包括阵列区和边缘区;
步骤S120,在基板上形成复合层,复合层包括非晶硅层和二氧化硅层,二氧化硅层位于非晶硅层远离基板的表面;
步骤S130,采用第一等离子体对阵列区上的二氧化硅层进行干法刻蚀,以露出阵列区上的非晶硅层的部分表面;
步骤S140,采用第二等离子体对露出部分表面的非晶硅层进行等离子体表面处理;
步骤S150,对等离子体表面处理后的非晶硅层和干法刻蚀后的二氧化硅层进行清洗;
步骤S160,在边缘区和阵列区上的复合层上涂布光刻胶层,并曝光、显影。
其中:采用第二等离子体对露出部分表面的非晶硅层201进行等离子体表面处理,一方面,能够对非晶硅层201表面的电荷起到中和的作用,从而去除由于静电吸附的杂质颗粒2;另一方面,能够处理掉非晶硅层201表面的不稳定化合物3,并在非晶硅层201的表面形成光滑的硬质层。
随后,再对等离子体表面处理后的非晶硅层201和干法刻蚀后的二氧化硅层202进行清洗,由此,该制造方法改善了阵列区11上非晶硅层201表面和光刻胶层30之间的黏附性,使得非晶硅层201能够更好地与光刻胶层30接合,提高了光刻过程中图形转移的精度,并避免了图案缺陷的产生,进而提高了半导体器件1的品质。
下面结合附图对本公开实施方式提供的光刻方法进行详细说明:
在步骤S110中,提供一基板10,该基板10可包括晶圆101和依次叠加在晶圆101上的第一氮化硅层102、碳层103和第二氮化硅层104,第一氮化硅层102、碳层103和第二氮化硅层104可采用化学气相沉积法形成,此处不再详细描述。
在步骤S120中,在基板10上形成复合层20,该复合层20可包括非晶硅层201和二氧化硅层202,且二氧化硅层202位于非晶硅层201远离基板10的表面。
具体而言,首先将非晶硅的气态原材料导入腔体内,并在基板10上形成非晶硅层201;然后,将二氧化硅的气态原材料导入腔体内,并在非晶硅层201上形成二氧化硅层202;由此,即可在基板10上形成复合层20。
在步骤S130中,采用第一等离子体对阵列区11上的二氧化硅层202进行干法刻蚀,以露出阵列区11上的非晶硅层201的部分表面,也就是说,对阵列区11上的二氧化硅层202进行干法刻蚀并形成预设图案。
易于理解的是,在采用第一等离子体对阵列区11上的二氧化硅层202进行干法刻蚀之前,本公开实施方式的半导体器件的制造方法还包括:
在腔体内对第一气体进行电离操作,以形成第一等离子体,从而进行二氧化硅层202的干法刻蚀。其中,第一气体可以为六氟丁二烯(C4F6)或八氟环丁烷(C4F8)搭配氧气,即:第一气体可以为氧气和八氟环丁烷的混合气体,或者为氧气和六氟丁二烯的混合气体,此处不再详细描述。
在步骤S140中,采用第二等离子体对露出部分表面的非晶硅层201进行等离子体表面处理。
如图3所示,非晶硅层201表面具有氢键,而氢键携带的正电荷会对灰尘有一定的吸附作用,因此,非晶硅层201表面会附着有杂质颗粒2(如图4所示)。另外,采用第一等离子体对阵列区11上的二氧化硅层202进行干法刻蚀后,由于用到的气体等离子体是一种高能态的粒子集合体,其化学反应活性很强,粒子之间会发生反应并形成不稳定化合物3(如图4所示)。
由此,杂质颗粒2和不稳定化合物3共同作用,使得光刻胶层30在旋转涂布工艺过程中不能较好地黏附在非晶硅层201上,进而降低了图形转移的精准度。
因此,如图5所示,采用第二等离子体对露出部分表面的非晶硅层201进行等离子体表面处理,一方面,能够对非晶硅层201表面的氢键起到中和作用,从而去除由于静电吸附的杂质颗粒2;另一方面,能够处理掉非晶硅层201表面的不稳定化合物3,从而有利于光刻胶层30的粘附,此处不再详细描述。
相应地,在采用第二等离子体对露出部分表面的非晶硅层201进行等离子体表面处理之前,本公开实施方式的半导体器件的制造方法还可包括:
在腔体内对第二气体进行电离操作,以形成第二等离子体,从而对露出部分表面的非晶硅层201进行等离子体表面处理。其中,第二气体为氧化二氮或氦气,此处不作特殊限定。
需要注意的是,由于氧化二氮或氦气形成的等离子体颗粒含有氮元素,而氮元素会在非晶硅层201的浅表层发生反应,产生类似SiN的成分,从而在非晶硅层201的表面形成光滑的硬质层,进而提高了非晶硅层201上的光刻胶层30的粘附性。
另外,在第二气体为氧化二氮时,第二气体的气体流量可以为4000标准毫升/分钟~6000标准毫升/分钟,而在第二气体为氦气时,第二气体的气体流量可以为1000标准毫升/分钟~3000标准毫升/分钟。同时,对第二气体进行电离操作的射频能量的取值范围可以为600瓦~800瓦,而腔体内的压力取值范围可以为4托~6托,从而形成实际加工过程中的等离子体颗粒,此处不再详细描述。
当然,第二气体也可以为其他气体,但该气体电离后形成的等离子体颗粒的半径不宜过大,以免对非晶硅层201造成过大的损伤。举例而言,第二气体也可以为氖气、氩气和氧气之中的一种或多种,此处不作特殊限定。
在步骤S150中,对等离子体表面处理后的非晶硅层201和干法刻蚀后的二氧化硅层202进行清洗(如图6所示)。
具体而言,步骤S150可包括以下步骤:
步骤S1501,采用气体吹拂等离子体表面处理后的非晶硅层201和干法刻蚀后的二氧化硅层202;
步骤S1502,采用液体对气体吹拂后的二氧化硅层202和非晶硅层201进行清洗,从而清除了非晶硅层201和二氧化硅层202表面的颗粒缺陷,进而也改善了非晶硅层201表面和光刻胶层30之间的黏附性。
举例而言,气体可为氮气或其他气体,而液体可为等离子水,此处不再详细介绍。
在步骤S160中,在边缘区12和阵列区11上的复合层20上涂布光刻胶层30(如图7所示),并曝光、显影,此处不再详细描述。由于清除了非晶硅层201表面的杂质颗粒2和不稳定化合物3,所以改善了阵列区11上非晶硅层201表面和光刻胶层30之间的黏附性,从而提高了光刻过程中图形转移的精度,进而避免了图案缺陷的产生。
随后,再在光刻胶层30远离基板10的表面依次形成硅氧基硬掩模中间层40和PR层50,且PR层50形成有第二预设图案,此处不再详细描述。当然,半导体器件1的制造还包括后续的封装、检测等多个步骤,但均不属于本申请的重点,所以不再一一赘述。
相应地,本公开实施方式还提供一种半导体器件,该半导体器件采用上述任意一项所述的制造方法制造而成。举例而言,该半导体器件可以为芯片或MOS器件等,此处一一列举。
应当理解的是,本公开不将其应用限制到本说明书提出的部件的详细结构和布置方式。本公开能够具有其他实施方式,并且能够以多种方式实现并且执行。前述变形形式和修改形式落在本公开的范围内。应可理解的是,本说明书公开和限定的本公开延伸到文中和/或附图中提到或明显的两个或两个以上单独特征的所有可替代组合。所有这些不同的组合构成本公开的多个可替代方面。本说明书所述的实施方式说明了已知用于实现本公开的最佳方式,并且将使本领域技术人员能够利用本公开。
Claims (10)
1.一种半导体器件的制造方法,其特征在于,包括:
提供一基板,所述基板包括阵列区和边缘区;
在所述基板上形成复合层,所述复合层包括非晶硅层和二氧化硅层,所述二氧化硅层位于所述非晶硅层远离所述基板的表面;
采用第一等离子体对所述阵列区上的所述二氧化硅层进行干法刻蚀,以露出所述阵列区上的所述非晶硅层的部分表面;
采用第二等离子体对露出部分表面的所述非晶硅层进行等离子体表面处理;
对等离子体表面处理后的所述非晶硅层和干法刻蚀后的所述二氧化硅层进行清洗;
在所述边缘区和所述阵列区上的所述复合层上涂布光刻胶层,并曝光、显影。
2.根据权利要求1所述的制造方法,其特征在于,对等离子体表面处理后的所述非晶硅层和干法刻蚀后的所述二氧化硅层进行清洗,包括:
采用气体吹拂等离子体表面处理后的所述非晶硅层和干法刻蚀后的所述二氧化硅层;
采用液体对所述气体吹拂后的所述二氧化硅层和所述非晶硅层进行清洗。
3.根据权利要求2所述的制造方法,其特征在于,所述气体为氮气,所述液体为等离子水。
4.根据权利要求1所述的制造方法,其特征在于,在采用第一等离子体对所述阵列区的所述二氧化硅层进行干法刻蚀之前,所述制造方法还包括:
在腔体内对第一气体进行电离操作,以形成所述第一等离子体;所述第一气体为氧气和六氟丁二烯的混合气体或者氧气和八氟环丁烷的混合气体。
5.根据权利要求4所述的制造方法,其特征在于,在采用第二等离子体对露出的所述非晶硅层表面进行等离子体表面处理之前,所述制造方法还包括:
在所述腔体内对第二气体进行电离操作,以形成所述第二等离子体;所述第二气体为氧化二氮或氦气。
6.根据权利要求5所述的制造方法,其特征在于,在所述第二气体为氧化二氮时,所述第二气体的气体流量为4000标准毫升/分钟~6000标准毫升/分钟;
在所述第二气体为氦气时,所述第二气体的气体流量为1000标准毫升/分钟~3000标准毫升/分钟。
7.根据权利要求5所述的制造方法,其特征在于,对所述第二气体进行电离操作的射频能量的取值范围为600瓦~800瓦。
8.根据权利要求5所述的制造方法,其特征在于,所述腔体内的压力取值范围为4托~6托。
9.根据权利要求5所述的制造方法,其特征在于,所述第二气体为氖气、氩气和氧气之中的一种或多种。
10.一种半导体器件,其特征在于,采用权利要求1~9任意一项所述的制造方法制造而成。
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