CN114447257B - Flexible substrate peeling method - Google Patents
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- CN114447257B CN114447257B CN202210050954.8A CN202210050954A CN114447257B CN 114447257 B CN114447257 B CN 114447257B CN 202210050954 A CN202210050954 A CN 202210050954A CN 114447257 B CN114447257 B CN 114447257B
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- 239000000758 substrate Substances 0.000 title claims abstract description 309
- 238000000034 method Methods 0.000 title claims abstract description 40
- 230000007547 defect Effects 0.000 claims description 52
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 4
- 239000004831 Hot glue Substances 0.000 claims description 3
- 238000011084 recovery Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 2
- 238000000926 separation method Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 229920001721 polyimide Polymers 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 8
- 230000010355 oscillation Effects 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 208000025165 Autoerythrocyte sensitization syndrome Diseases 0.000 description 2
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- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 238000012790 confirmation Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000013072 incoming material Substances 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The application provides a flexible substrate stripping device and a flexible substrate stripping method, wherein the flexible substrate stripping method comprises the following steps: placing a substrate with a flexible substrate formed on a stage; performing scanning irradiation on the substrate by using laser at least twice; the incidence angle of laser incident to the substrate board in at least one scanning irradiation is 40-70 degrees, so that the technical problem of black point display of a flexible display device picture is solved by using a flexible board stripping method.
Description
Technical Field
The application relates to the technical field of display, in particular to a flexible substrate stripping method.
Background
Flexible display devices have deformability and bending properties, and thus become a mainstream of display fields with technological progress. Flexible display devices generally include a flexible substrate and a substrate, wherein the flexible substrate is made of a colored polyimide. And carrying out each process flow of the active matrix organic light emitting secondary body on the substrate base plate coated with the high temperature resistant polyimide film, and then separating the flexible base plate from the substrate base plate by utilizing a laser stripping technology.
When the flexible substrate is peeled by a laser irradiation method, namely a laser peeling method, laser is incident to the substrate and irradiates on one surface of the flexible substrate through the substrate, and the surface of the flexible substrate facing the substrate is carbonized due to strong absorption of the polyimide film to specific laser wavelength, so that the adhesion between the flexible substrate and the substrate is reduced, and the separation of the flexible substrate and the substrate is realized.
When foreign matters, corrosion, pits, bubbles and scratches exist on the surface of the substrate base plate facing away from the flexible substrate, the defects cannot be removed cleanly by cleaning. When laser light is incident to the substrate by the prior art method, the laser light cannot penetrate the defect of the substrate or is directly blocked and scattered by the defect of the substrate. Therefore, the area of the flexible substrate corresponding to the defect is adhered to the substrate, and the surface of the flexible substrate is subjected to stress tearing in the subsequent separation process, so that the corresponding area of the flexible substrate is deformed, and even the pixel structure of the area is adversely affected. For example, thin film transistors causing pixel structures in the region remain on the substrate, causing a phenomenon of black spots when the flexible display device displays a picture.
Disclosure of Invention
The application provides a flexible substrate stripping method for solving the technical problem of black dot display of a flexible display device picture.
The application provides a flexible substrate stripping method, which comprises the following steps:
placing a substrate with a flexible substrate formed on a stage;
performing scanning irradiation on the substrate by using laser at least twice;
wherein the incidence angle of the laser light incident on the substrate in at least one scanning irradiation is 40 DEG to 70 deg.
Optionally, the step of performing scanning irradiation on the substrate by using laser at least twice includes the following steps:
using a first laser to enter the surface of the substrate in a first incident angle direction, and performing first scanning irradiation on the substrate, wherein the first incident angle is 7-10 degrees;
and utilizing a second laser to enter the surface of the substrate in a second incident angle direction, and carrying out second scanning irradiation on the substrate, wherein the second incident angle is 40-70 degrees.
Optionally, the step of performing scanning irradiation on the substrate by using laser at least twice includes the following steps:
using laser to enter the surface of the substrate in a first incident angle direction, and performing first scanning irradiation on the substrate;
rotating the stage 160 ° to 175 ° around the vertical direction;
using laser to enter the surface of the substrate in the direction of a first incident angle to perform second scanning irradiation on the substrate;
wherein the first angle of incidence is 40 ° to 70 °.
Optionally, the irradiation is performed at least twice with a laser along a short side of the substrate base plate.
Alternatively, the beam width of the laser is 800 μm.
Optionally, before the step of performing the scanning irradiation on the substrate with the laser at least twice, the method further includes the steps of:
cleaning the surface of the substrate base plate;
the substrate is inspected with an automated optical detector.
Optionally, after the step of inspecting the substrate with the automated optical detector, the method further comprises:
judging that the defect size on the substrate is larger than or equal to a preset threshold value, and if so, enabling the substrate to flow to a recovery station;
otherwise, the substrate base plate is scanned and irradiated at least twice by utilizing laser.
Optionally, in the step of placing the substrate with the flexible substrate formed on the stage, the method includes the steps of:
disposing a sacrificial layer on a substrate base;
disposing a flexible substrate on the sacrificial layer;
the substrate is placed on a stage.
Correspondingly, the application also provides a flexible substrate stripping device, and the flexible substrate stripping method comprises an objective table and at least one laser emitter, wherein the objective table is used for bearing a substrate with a flexible substrate; at least one laser transmitter is located on the stage; when the flexible substrate is peeled off, the laser emitted by the laser emitter irradiates the substrate at least twice, and the incident angle of incidence to the substrate is 40 DEG to 70 deg.
Further, the flexible substrate stripping device further comprises a reflecting mirror, the reflecting mirror is arranged on the objective table, and the laser emitted by the laser emitter is reflected by the reflecting mirror and then is incident to the substrate at an incident angle of 40-70 degrees.
The application provides a flexible substrate stripping method, which utilizes laser to carry out scanning irradiation on the surface of a substrate at least twice, so that when the surface of the substrate is subjected to at least two irradiation scans, the projection positions of the defects on the surface of the substrate facing the substrate along the incidence direction of the defects are different, and the area corresponding to the foreign matters or the defects on the flexible substrate can be more effectively decomposed, so that the flexible substrate and the substrate are conveniently separated.
When the substrate is scanned by laser irradiation, the length of a refraction area required to be refracted to the flexible substrate is larger so as to ensure the separation effect of the substrate and the flexible substrate; meanwhile, it is necessary to control reflection loss caused through the surface of the substrate to ensure the separation efficiency. Within a reasonable range, the greater the angle of incidence of the laser light on the surface of the substrate, the greater the length of the refractive region that is refracted through the substrate to the surface of the flexible substrate. Meanwhile, as the incident angle is larger, the loss reflected by the surface of the substrate base plate is larger, and thus, in the present application, the incident angle is preferably 40 ° to 70 ° as a whole.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of laser incidence in a flexible substrate stripping apparatus according to the present application;
FIG. 2 is a flow chart of a flexible substrate peeling method according to a first embodiment of the present application;
FIG. 3 is a flow chart of a flexible substrate peeling method according to a second embodiment of the present application;
FIG. 4 is a table of data of peeling failure rate when the defect is hot melt adhesive in the flexible substrate peeling method provided by the application;
FIG. 5 is a table showing the data of the peeling failure rate when the defect is PAS glue in the peeling method of the flexible substrate according to the present application;
fig. 6 is a data table of the peeling failure rate when the defect is a scratch in the flexible substrate peeling method according to the present application.
Reference numerals illustrate:
100. a substrate base; 200. a flexible substrate; 300. and a stage.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application. Furthermore, it should be understood that the detailed description is presented herein for purposes of illustration and description only, and is not intended to limit the application. In the present application, unless otherwise indicated, terms of orientation such as "upper", "lower", "left" and "right" are generally used to refer to the directions of the upper, lower, left and right sides of the device in actual use or operation, and are specifically shown in the drawings.
The application provides a flexible substrate peeling method, which is described in detail below. It should be noted that the following description order of the embodiments is not intended to limit the preferred order of the embodiments of the present application. In the following embodiments, the descriptions of the embodiments are focused on, and for the part that is not described in detail in a certain embodiment, reference may be made to the related descriptions of other embodiments.
Referring to fig. 1-6, the present application provides a flexible substrate peeling method, which includes the following steps:
in step S100, the substrate 100 with the flexible substrate 200 formed thereon is placed on the stage 300.
Referring to fig. 1, the substrate 100 may be a transparent glass substrate, a transparent plastic substrate, or other transparent substrate, and the material of the flexible substrate 200 disposed on the substrate 100 includes, but is not limited to, a polyimide film, and the material of the flexible substrate 200 is preferably a polyimide film in the present application. A polyimide resin solution is coated on one surface of the substrate 100, and then baked by an oven, and when the baking temperature is higher than the decomposition temperature of the polyimide resin, the polyimide resin is decomposed on the surface of the substrate 100, so that a polyimide film is deposited and cured on the surface of the substrate 100 to prepare the flexible substrate 200. In the present application, a display panel, such as an active matrix organic light emitting diode or an active matrix light emitting diode, is formed on the flexible substrate 200.
S300, performing at least two scanning irradiation on the substrate 100 by using laser, where an incident angle of the laser incident on the substrate 100 in at least one scanning irradiation is 40 ° to 70 °.
Scanning irradiation is performed from one side of the substrate 100 to the other side thereof with a laser emitter, so that laser light is sequentially refracted onto the flexible substrate 200 via the substrate 100. Since the flexible substrate 200 (polyimide film) strongly absorbs a specific laser wavelength, the surface of the flexible substrate 200 facing the substrate 100 is carbonized, so that the adhesion between the flexible substrate 200 and the substrate 100 is reduced, thereby realizing the separation of the flexible substrate 200 and the substrate 100 and avoiding the occurrence of black dot display on the display device.
When the laser light emitted from the laser emitter is irradiated onto the substrate 100, a part of the laser light is refracted onto the flexible substrate 200 through the substrate 100, and another part of the laser light is reflected through the surface of the substrate 100. According to the optical path diagram in fig. 1, assuming that the thickness of the substrate 100 is 500 μm, when the incident angle α=40° of the laser light to the surface of the substrate 100, the area length a=0.24 mm of the laser light refracted to the surface of the flexible substrate 200 through the substrate 100; when α=70°, the laser light is refracted through the substrate board 100 to the area length a=0.42 mm of the surface of the flexible board 200. Meanwhile, the laser light incident on the surface of the substrate 100 includes horizontal vibration light and vertical vibration light, and when the laser light is reflected by the substrate 100, emission loss is caused. When the incident angle α=40°, the reflection loss of the horizontal oscillation light through the substrate 100 was 7.2%, the reflection loss of the vertical oscillation light through the substrate 100 was 1.3%, and the overall average reflection loss of the laser light was 4.3%. When the incident angle α=70°, the reflection loss of the horizontal oscillation light through the substrate 100 was 29%, the reflection loss of the vertical oscillation light through the substrate 100 was 4%, and the overall average reflection loss of the laser light was 16.5%. Further, when the incident angle α=10°, the reflection loss of the horizontal vibration light and the vertical vibration light through the substrate 100 as a whole was 3.75%.
When scanning the substrate 100 by laser irradiation, the length of the refractive region required to be refracted to the flexible substrate 200 is large to ensure the separation effect of the substrate 100 from the flexible substrate 200; meanwhile, it is necessary to control reflection loss caused through the surface of the substrate 100 to ensure the efficiency of separating the substrate 100 from the flexible substrate 200. Within a reasonable range, the greater the angle of incidence of the laser light on the surface of the substrate 100, the greater the length of the refractive region refracted through the substrate 100 to the surface of the flexible substrate 200. Meanwhile, as the incident angle is larger, the loss reflected by the surface of the substrate 100 is larger, and thus the incident angle is preferably 40 ° to 70 ° in the present application as described above.
In addition, the surface of the substrate 100 is scanned and irradiated with the laser light at least twice, so that the projection positions of the foreign matters or defects on the surface of the substrate 100 along the incident direction of the flexible substrate 200 are different when the surface of the substrate 100 is irradiated and scanned at least twice, and the region corresponding to the foreign matters or defects on the flexible substrate 200 can be more effectively decomposed, so that the flexible substrate 200 is separated from the substrate 100. In the present application, when the substrate 100 is irradiated with the all-solid-state semiconductor laser, the peeling failure rate due to defects of 100 μm or more is 47% to 53% after the first irradiation of the substrate 100, the peeling failure rate due to defects of 500 μm or less is 0 after the second irradiation of the substrate 100, and the peeling failure rate due to defects of 500 μm or more is 5% to 11%, so that it is known that the yield in peeling can be remarkably improved by the multiple irradiation of the substrate 100.
Further, referring to fig. 2, in the step of performing scanning irradiation on the substrate 100 at least twice with laser light, the steps include:
s310, utilizing laser to enter the surface of the substrate 100 in a first incident angle direction, and performing first scanning irradiation on the substrate 100;
s320, rotating the object stage 300 around the vertical direction by 160 degrees to 175 degrees;
s330, utilizing laser to enter the surface of the substrate 100 in the first incident angle direction, and performing second scanning irradiation on the substrate 100;
wherein the first angle of incidence is 40 ° to 70 °.
After the first scanning irradiation is performed by using the laser beam incident on the substrate 100 in the direction of the first incident angle, the substrate 100 placed on the stage 300 is rotated by 160 ° to 175 ° with respect to the laser emitter by rotating the stage 300, and then the second scanning irradiation is performed by using the laser beam incident on the substrate 100 in the direction of the same first incident angle. The objective table 300 is utilized to drive the substrate 100 to rotate 160-175 degrees relative to the laser emitter, so that the projection positions of the foreign matters or defects on the substrate 100 are different between the first scanning irradiation and the second scanning irradiation, thereby facilitating the full and effective decomposition by utilizing multiple irradiation, so that the region of the flexible substrate 200 corresponding to the foreign matters or defects can be separated from the substrate 100, facilitating the complete separation of the flexible substrate 200 and the substrate 100, improving the stripping effect of the flexible substrate 200, and avoiding the condition that the display device displays black spots.
In addition, the stage 300 drives the substrate 100 to rotate 160 ° to 175 ° relative to the laser emitter, so that the foreign matters or defects on the substrate 100 can effectively separate the projection generated by the first irradiation from the projection generated by the second irradiation, so that the region of the flexible substrate 200 corresponding to the foreign matters or defects can be separated from the substrate 100. Since most of the linear defects (such as scratches, foreign matters, dirt, etc.) are horizontally distributed along the length or width direction of the substrate 100, the projections generated by the linear defects during the multiple irradiation can be effectively separated by limiting the rotation of the stage 300 to 160 ° to 175 ° relative to the laser emitter, so that the overlapping of the projections generated by the linear defects during the multiple irradiation can be reduced as much as possible, and the separation effect of the flexible substrate 200 and the substrate 100 can be improved.
For defects in hot melt adhesive formation, it can be seen from the test data in fig. 4:
when the scanning substrate 100 is irradiated with the laser light twice in the direction of the incidence angle of 40 ° to 70 °, the peeling failure rate of the flexible substrate 200 is about 5%, and when the scanning substrate 100 is irradiated with the laser light once in the direction of the incidence angle of 40 ° to 70 °, the peeling failure rate of the flexible substrate 200 is 42% to 47%; thus, by increasing the number of times the laser beam is obliquely incident on the substrate 100, the yield of the lift-off can be significantly improved.
For defects in PSA glue formation, it can be seen from the test data in fig. 5:
when the scanning substrate 100 is irradiated with the laser light twice in the direction of the incidence angle of 40 ° to 70 °, the peeling failure rate of the flexible substrate 200 is 5% to 11%, and when the scanning substrate 100 is irradiated with the laser light once in the direction of the incidence angle of 40 ° to 70 °, the peeling failure rate of the flexible substrate 200 is 47% to 53%; thus, by increasing the number of times the laser beam is obliquely incident on the substrate 100, the yield of the lift-off can be significantly improved. Meanwhile, under the same incidence condition, the larger the incidence angle is, the smaller the defective rate of the flexible substrate 200 peeling is.
The defects formed by the needle scratch are as follows from the test data of fig. 6:
when the scanning substrate 100 is irradiated once with laser light in a direction of 40 ° to 70 ° of incidence angle, various types of scratches cause bad codes (GDS) upon confirmation of lighting of the all-solid-state semiconductor laser; when the scanning substrate 100 is irradiated twice with the laser light in the direction of incidence angle 40 ° to 70 °, only the scratch in the vertical direction and the scratch size along the Y axis of 1937 μm cause defective codes (GDSs) when the lighting of the all-solid-state semiconductor laser is confirmed, and the defective rate of the peeling of the flexible substrate 200 is small.
Further, in step S310 and step S330, scanning irradiation is performed at least twice along the short side of the substrate 100 with laser light.
By limiting the laser emitters to scan along the short sides of the substrate 100 during both the first and second scanning shots, the projections of the linear defects on the substrate 100 on the flexible substrate 200 can be more effectively separated during multiple shots.
Further, the beam width of the laser was 800. Mu.m.
When the substrate 100 is irradiated with laser light at least twice, the following formula is followed:
wherein P is the total power of the laser, ATT is the attenuation rate, and a is the beam width of the laser; b is the beam length of the laser and ED is the energy density.
According to the above formula, when the beam width of the laser is increased, the irradiation scanning speed can be increased without changing the coincidence rate, so that the energy density is reduced, and the distance-from-birth time is shortened.
The overlap ratio in the application is obtained by the following formula:
wherein overlap is the coincidence rate, V is the speed of movement of the stage relative to the laser emitter, SA is the minor axis width, f is the frequency, sa=0.4±0.01mm when the laser emitter is a gaseous laser, sa=0.03±0.002mm when the laser emitter is a solid state laser.
The beam width of the laser in the related art is 400 μm, and in the case of a 75% overlap ratio, the flexible substrate 200 is irradiated 4 times by the laser in the case of one complete scan irradiation. The beam width of the laser in the application is 800 μm, the flexible substrate 200 is irradiated by the laser for 4 times, and the rate of coincidence is kept at 75% in the prior art, and the speed of the laser for completing scanning irradiation is doubled under the condition of one-time complete scanning irradiation, thereby obviously improving the peeling efficiency of the flexible substrate 200.
Further, before the step of performing the scanning irradiation on the substrate 100 at least twice with the laser, the method further includes the following steps:
s210, cleaning the surface of the substrate 100;
s220, the substrate 100 is inspected by an automated optical detector.
The substrate 100 is cleaned in advance to reduce foreign matters and defects on the surface of the substrate 100, thereby improving the effect of laser lift-off of the flexible substrate 200. The cleaning effect of the substrate 100 can be improved by cleaning against defects such as the dirt of the incoming residual glue, the pits of the incoming material, and BP stabs.
Meanwhile, the substrate 100 is detected by an automatic optical detector, so that the position of the defect can be obtained before irradiation by laser scanning, and the accuracy of the subsequent laser scanning irradiation can be improved.
Further, after the step of inspecting the substrate 100 using the automated optical detector, the method further includes:
s230, judging that the defect size on the substrate 100 is larger than or equal to a preset threshold value, if yes, the substrate 100 flows to a recovery station;
otherwise, the substrate 100 is irradiated with the laser light at least twice.
When the size of the defect on the substrate 100 is greater than or equal to a preset threshold, the substrate 100 is flowed to the recycling station, and then the substrate 100 is cleaned for the second time, so that the cleaning effect of the substrate 100 flowing to the laser irradiation station is improved, the influence of the defect on the laser incidence is reduced, and the flexible substrate 200 is separated from the substrate 100. The above-mentioned preset threshold is defined as 500 μm in the present application in combination with the common defects of the substrate 100.
The defect rate of the substrate 100 is obtained according to the following formula:
DPU=D/U
p=1-e
-DPU
wherein, DPU is the number of unit defects, D is the number of defects, U is the number of units, and p is the defect rate.
For example, specification t8 LLO reject ratio: 55 inches (6 faces): p=1-e -（3/6） =39.35%65 inches (3-sided): p=1-e -（3/3） =63.21% 。
Therefore, by pre-judging and screening the defect size, the substrate 100 with the defect size larger than the preset threshold value is reflowed to the cleaning place for secondary cleaning, so as to reduce the defect on the surface of the substrate 100 and improve the separation effect of the flexible substrate 200 and the substrate 100 during laser irradiation. The substrate 100 having a defect size smaller than a preset threshold may improve the separation effect of the flexible substrate 200 and the substrate 100 in cooperation with the obliquely incident laser.
Further, in the step of placing the substrate 100 formed with the flexible substrate 200 on the stage 300, the steps of:
s110, disposing a sacrificial layer on the substrate 100;
s120, arranging a flexible substrate 200 on the sacrificial layer;
s130, placing the substrate 100 on the object stage 300.
When laser is incident on the surface of the substrate 100, hydrogen explosion can be generated by laser treatment of the sacrificial layer in a high-temperature environment, so that the flexible substrate 200 and the substrate 100 can be separated, and the flexible substrate 200 can be protected from being damaged by laser stripping.
A flexible substrate peeling apparatus, to which the flexible substrate peeling method in the first embodiment is applied, includes a stage 300 and at least one laser emitter, the stage 300 being for carrying a substrate 100 on which a flexible substrate 200 is formed; the laser transmitter is located on the stage 300. When the flexible substrate 200 is peeled off, the laser emitted from the laser emitter irradiates the substrate 100 with at least two scans, and the incident angle to the substrate 100 is 40 ° to 70 °. In the present application, one laser emitter is preferable.
Further, the flexible substrate peeling apparatus further includes a reflecting mirror disposed on the stage 300; the laser emitted by the laser emitter is reflected by the reflecting mirror and then enters the substrate 100 at an incident angle of 40 ° to 70 °.
Implement two
Referring to fig. 3, in the step of performing scanning irradiation on the substrate 100 at least twice with laser light, a flexible substrate peeling method includes the steps of:
s310, utilizing a first laser to enter the surface of the substrate 100 in a first incident angle direction, and performing first scanning irradiation on the substrate 100, wherein the first incident angle is 7-10 degrees;
s320, the second laser is incident to the surface of the substrate 100 in the second incident angle direction, and the substrate 100 is subjected to the second scanning irradiation, where the second incident angle is 40 ° to 70 °.
The original laser emitter is used to make incident on the surface of the substrate 100 at an incident angle of 7 ° to 10 ° for the first scanning irradiation. And then is incident on the surface of the substrate 100 with an additionally arranged laser emitter at an incident angle of 40 deg. to 70 deg. for a second scanning irradiation.
Because the original laser emitter light source is huge and the precision requirement is better, the extra supplementary laser emitter is utilized to obliquely irradiate the substrate 100 so as to balance the irradiation area and reflection loss which are refracted to the surface of the flexible substrate 200, thereby taking into account the irradiation effect and the separation efficiency.
The flexible substrate peeling method in this embodiment is consistent with the other steps of the flexible substrate peeling method in implementation, and reference may be made specifically to the flexible substrate peeling method in this embodiment.
A flexible substrate peeling apparatus, to which the flexible substrate peeling method in the second embodiment is applied, includes a stage 300 and at least one laser emitter, the stage 300 being for carrying a substrate 100 on which a flexible substrate 200 is formed; the laser transmitter is located on the stage 300. When the flexible substrate 200 is peeled off, the laser emitted from the laser emitter irradiates the substrate 100 with at least two scans, and the incident angle to the substrate 100 is 40 ° to 70 °. In the present application, two laser emitters are preferable.
Further, the flexible substrate peeling apparatus further includes a reflecting mirror disposed on the stage 300; the laser emitted by the laser emitter is reflected by the reflecting mirror and then enters the substrate 100 at an incident angle of 40 ° to 70 °.
The foregoing has outlined rather broadly the more detailed description of the method for peeling a flexible substrate, wherein specific examples are provided herein to illustrate the principles and embodiments of the present application, and wherein the above examples are provided to facilitate an understanding of the method and core concepts of the present application; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present application, the present description should not be construed as limiting the present application in view of the above.
Claims (6)
1. A flexible substrate peeling method, comprising the steps of:
placing a substrate with a flexible substrate formed on a stage;
detecting the substrate with an automated optical detector; and
judging that the defect size on the substrate is larger than a preset threshold value, if yes, enabling the substrate to flow to a recovery station; otherwise, carrying out at least two scanning irradiation on the substrate by utilizing laser, wherein the incidence angle of the laser incident on the substrate in at least one scanning irradiation is 40-70 degrees; the projection positions of the defects on the surface of the flexible substrate facing the substrate along the incident direction are different when the defects are irradiated and scanned at least twice;
the beam width of the laser is 800 mu m;
wherein, for the defect formed by the hot melt adhesive, the preset threshold value of the defect size is as follows: 721. μm×833 μm, or 155 μm×1001 μm, or 1012 μm×143 μm, or 785 μm×458 μm.
Aiming at defects formed by the PSA glue, the preset threshold value of the defect size is as follows: 387. μm×609 μm, or 571 μm×231 μm, or 450 μm×320 μm, or 631 μm×150 μm.
For defects formed by scratches, the defects are scratches in the vertical direction and along the Y axis, and the preset threshold of the defect size is 1937 μm.
2. The flexible substrate peeling method according to claim 1, characterized in that in the step of irradiating the substrate with laser light at least twice, comprising the steps of:
using a first laser to enter the surface of the substrate in a first incident angle direction, and performing first scanning irradiation on the substrate, wherein the first incident angle is 7-10 degrees;
and utilizing a second laser to enter the surface of the substrate in a second incident angle direction, and carrying out second scanning irradiation on the substrate, wherein the second incident angle is 40-70 degrees.
3. The flexible substrate peeling method according to claim 1, characterized in that in the step of irradiating the substrate with laser light at least twice, comprising the steps of:
using laser to enter the surface of the substrate in a first incident angle direction, and performing first scanning irradiation on the substrate;
rotating the stage 160 ° to 175 ° around the vertical direction;
using laser to enter the surface of the substrate in the direction of a first incident angle to perform second scanning irradiation on the substrate;
wherein the first angle of incidence is 40 ° to 70 °.
4. The flexible substrate peeling method according to claim 3, wherein,
at least two scanning shots are performed along the short side of the substrate base plate with a laser.
5. The flexible substrate peeling method according to claim 1, characterized by further comprising, before the step of scanning irradiation of the substrate with the laser light at least twice, the steps of: the surface of the substrate base plate is cleaned.
6. The flexible substrate peeling method according to claim 1, wherein in the step of placing the substrate formed with the flexible substrate on the stage, comprising the steps of:
disposing a sacrificial layer on a substrate base;
disposing a flexible substrate on the sacrificial layer;
the substrate is placed on a stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210050954.8A CN114447257B (en) | 2022-01-17 | 2022-01-17 | Flexible substrate peeling method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210050954.8A CN114447257B (en) | 2022-01-17 | 2022-01-17 | Flexible substrate peeling method |
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| Publication Number | Publication Date |
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