JP2005311320A - Foreign matter removing method and its apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for surely removing a foreign matter from a substrate and to provide its apparatus. <P>SOLUTION: The foreign matter is removed through a process to bring a probe 2 into contact with a foreign matter 3 adhered on a function region 4 (for example, wiring region) of the substrate 6 and to apply a shearing stress to it by the probe 2 in the transverse direction to separate the foreign matter 3 from the substrate 6; and a process to move the separated foreign matter 3 from the position of deposit outside the function region 4, especially to a nonfunction region 5, then adheres or removes by laser light irradiation. In addition, before the removal of foreign matter, a process to obtain structure information, a process to obtain particle information, a process to select a position, and a process to select a route are carried out. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a foreign matter removing method and apparatus suitable for removing foreign matter attached to, for example, a semiconductor wafer, a stencil mask or the like.

  In recent years, since the miniaturization of semiconductor elements exceeds the resolution limit of photolithography, a fine processing technique for exposing and drawing a fine circuit pattern using a charged particle beam such as an electron beam or an ion beam has been developed. Yes.

  However, in the conventional direct drawing method using electron beam exposure, the data size increases as the pattern becomes finer, resulting in a longer drawing time and lower productivity (throughput).

  In view of this, a transfer type electron beam exposure apparatus or ion beam exposure apparatus has been proposed in which a circuit pattern is formed on a wafer by irradiating an electron beam, ion beam or the like onto a transfer mask having a predetermined circuit pattern. In the transfer type lithography, a charged particle beam transmitted through a mask is reduced and projected by an electron / ion optical system (Lucent Technologies' SCALPEL: scattering with angular limitation in projection electron-beam lithography, IBM's PREVAIL: projection exposure with variable axis immersion lenses, Nikon's EB stepper and ion beam transfer lithography, etc., and a method of transferring to a wafer close to the mask directly without using an electron / ion optical system (Rieple, Tokyo Seimitsu Co., Ltd.) LEEPL: low-energy e-beam proximity lithography, etc.).

  What is common for these transfers is that a thin film region (membrane) having a thickness of about 100 nm to 10 μm is formed on a mask and a transfer pattern is arranged on the membrane. Transfer patterns are formed by (1) stencil masks (for example: HC Pfeiffer, Jpn. J. Appl. Phys. 34, 6658 (1995)), (2) scatterers such as metal thin films. What is formed is called a scattering membrane mask (for example: LR Harriott, J. Vac. Sci. Technol. B 15, 2130 (1997).).

  The above-mentioned LEEPL: Low accelerating voltage electron beam equal magnification proximity exposure is one of high-throughput electron beam exposure techniques of 100 nm or less. For example, in a state where the distance between the wafer and the stencil mask is close to about 50 μm, By irradiating the wafer with a parallel low acceleration voltage electron beam, the mask pattern is transferred at an equal magnification. The stencil mask used has a thickness of about 100 nm to 2 μm, and has a through-hole formed in a thin film (membrane) such as Si, SiC, or diamond.

  Now, the demand for cleanliness in the manufacture of semiconductor devices such as stencil masks is becoming higher year by year. In the case of foreign matter adhering to a stencil mask or the like, the problem to be examined is the size and the number of attached foreign matters. As for the size of the foreign matter, the foreign matter having a size larger than ½ to 1/10 of the pattern size of the wiring or the like produced on the surface of the substrate is a target for removal. Therefore, for example, when the gate-to-gate dimension is 45 nm, foreign matters having a size larger than 4 to 23 nm are targeted for removal.

  Also, the biggest goal is to bring the number of adhered foreign substances close to zero, and the LSI area (Large Scale Integration) will increase the chip area, resulting in the occurrence of defects due to the adhered foreign substances. Probability increases. Further, for example, in a photomask, defect points at the time of exposure are generated in proportion to the number of adhered foreign substances and the number of exposure substrates. In any case, it is desired that the absolute number of foreign matters that cause defects due to adhesion is zero.

  Where such very high cleanliness is desired, cross-contamination within the same wafer surface must be prevented. For example, in batch cleaning, there is a problem of contamination (cross-contamination) due to low cleanliness wafers in the same batch, and single-wafer cleaning has been developed in order to prevent the cross-contamination one by one.

Similarly, the cross contamination in the same wafer surface that the adhering foreign material once removed adheres to the same substrate surface occurs. That is, in the conventional wet cleaning method that performs batch processing of the surface, there is a fear that foreign matter newly adheres and the cleanliness deteriorates. There is also a concern that foreign matter may newly adhere during drying.
Further, such a wet cleaning method may affect the elements constituting the semiconductor device and the three-dimensional structure of the elements. For example, according to the International Technology Roadmap for Semiconductors (ITRS), the etching amount of the source part and the drain part of a transistor in a 45 nm node device is set to 0.4 mm or less. With the miniaturization of element structures in LSIs and the diversification of materials constituting LSIs, there is a possibility that the pattern that is miniaturized may be affected by pattern collapse or the like due to wet cleaning.
Furthermore, even in the case of etching with an aqueous solution of ammonia and hydrogen peroxide, for example, the above-described influence occurs despite the use of the principle of removing particles with weak adhesion to the substrate. Will be restricted by the cleaning solution.
Thus, when considering a cleaning technique in which the cleaning process achieves an extremely high cleaning degree in total, local cleaning that individually removes adhering foreign matter is desirable.

  This local cleaning is practically performed after the surface of a stencil mask or the like is preliminarily cleaned by a conventional technique in order to individually remove foreign matters.

  As shown in FIG. 34, this is because, for example, the number of foreign matters on a mask is reduced from, for example, 1000 to 15 by a conventional removal method, and then a foreign matter removing device having a structure in which a probe is used to remove a small number of remaining foreign matters. 107, which is a cleaning assembly 97 (see Patent Document 1 described later).

  In this assembly 97, a photomask 101 (which may be a stencil mask) is placed on the support base 104 by a manual or automatic loading mechanism. The support 104 is coupled to a drive mechanism 105 that moves the photomask 101 between the inspection position and the cleaning position. First, the photomask 101 is placed at an inspection position on the support 104, and the foreign matter adhering to the photomask 101 is inspected by the inspection device 93.

  Next, after inspecting the photomask 101, the photomask 101 is moved to the cleaning position, and the cantilever 98 having the probe 95 is moved and arranged in the protective thin film frame 106 through the opening 96. As a result, the tip portion of the probe 95 is disposed to face the photomask 101.

  Next, the position of the foreign matter found during the inspection by the inspection device 93 has already been read by the CPU 103 which is the central processing unit, and the cantilever 98 moves the cantilever 98 within the horizontal XY plane and the vertical Z plane. It is moved by the drive mechanism 102 that can be operated. Since the driving mechanism 102 is coupled to the CPU 103, the coordinates of the foreign matter selected by the driving mechanism 102 are read from the CPU 103 to the driving mechanism 102. Therefore, the cantilever 98 can be moved in the horizontal X direction and the Y direction by the control of the CPU 103, and can be moved to an arbitrary position on the photomask 101 where the foreign matter adheres.

  Next, the probe 95 of the cantilever 98 is lowered to a position where it contacts or almost contacts the foreign matter on the photomask 101 in the vertical direction. Subsequently, the electrostatic force generated when the cantilever 98 is polarized allows the foreign matter to be separated from the photomask 101 and attached to the surface of the probe 95 of the cantilever 98.

  Subsequently, the probe 95 to which foreign matter is attached moves backward from the photomask 101 and moves into the cleaning chamber 99. In the cleaning chamber 99, the foreign matter attached to the probe 95 is attached to the filter plate 100, whereby the probe 95 is cleaned. These steps are continued from the photomask 101 until there is no foreign matter.

  Such a conventional technique is to remove adhering foreign matter on the surface of the photomask 101 by adsorbing it to the probe 95 to be brought close to the surface, and aims to eliminate the occurrence of defect points by reducing the number of adhering foreign matters to zero. It is said. That is, the probe 95 is brought close to the adhering foreign matter without being brought into contact, and the adhering foreign matter is attracted to the probe 95 by an electrostatic force or a force engaging with an adhesive or the like covering the probe 95, and then the probe 95 is removed from the substrate. Remove foreign matter.

JP-A-8-254817 (page 4, left column, line 23 to page 4, right column, line 34, FIG. 2)

  However, when the foreign matter removing apparatus 107 as described above is used, the adhesion force acting between the foreign matter and the surface of the substrate such as the photomask 101 is an intermolecular force (Van der Waals force) or particularly a liquid crosslinking force. Or, when it is very strong like a chemical bond, it is difficult to remove the foreign matter from the surface of the mask with electrostatic force. This is because the electrostatic force is weaker than the intermolecular force or the liquid cross-linking force between the completely adhered foreign matter and the substrate.

  In this apparatus, the method of physically contacting the probe 95 and the adhering foreign substance is most desirable for removing the foreign substance. However, in order to avoid damage to the mask surface, the method does not employ the method so that the foreign substance is not contacted. Therefore, it is difficult to remove the adhered foreign matter from the mask surface for the reasons described above.

  The present invention has been made in view of the above situation, and the object thereof is a foreign matter removing method capable of reliably removing foreign matters from a substrate such as a semiconductor wafer, a stencil mask, a photomask, and the like. And providing such a device.

  That is, the present invention includes a step of applying a shearing force to the foreign matter attached on the functional area of the substrate to cause the foreign matter to be detached from the base, and a step of removing the detached foreign matter from the attached position outside the functional region. The present invention relates to a foreign matter removing method. Here, the shearing force refers to a force acting in a tangential direction of a plane where the base body and the foreign object are in contact.

  Further, the present invention provides a structure for acquiring information on the surface structure of the substrate detected in advance prior to the step of detaching the foreign matter from the substrate and the step of removing the detached foreign matter outside the functional area. An information acquisition step, a particle information acquisition step for acquiring information on the foreign matter detected in advance, a position selection step for selecting a priority order of the movement target position of the foreign matter, and a movement path to the movement target position of the foreign matter The present invention relates to a foreign matter removing method having a path selecting step for selecting a.

  The present invention also provides a shearing force applying means for applying a shearing force to the foreign matter adhering to the functional area of the substrate to separate the foreign substance from the base, and a foreign matter adhering the shearing force applying means to the functional area. And a foreign matter removing means for removing the foreign matter released from the functional area from the attached position to the outside of the functional area.

  In the present invention, the functional area refers to an area (for example, a wiring area) in which a certain type of functional operation is performed in the area existing on the substrate, and the non-functional area refers to a functional operation. Indicates an invalid area that does not perform.

  According to the present invention, when removing the foreign matter adhering to the functional area of the substrate, a shearing force is applied to the foreign matter to separate the foreign matter from the substrate. Even if the foreign matter adheres more strongly, the foreign matter is reliably removed from the functional area on the substrate and removed by applying a shearing force that exceeds the adhesion strength of the foreign matter to the foreign matter. In addition, since the shearing force is applied only to the foreign matter and the shearing force is not applied to the base body, the base body can be prevented from being damaged due to the application of the shearing force. Preferred.

In addition, according to the foreign matter removal method according to the present invention, the structure information acquisition step, the particle information acquisition step, the position selection step, and the route selection step are performed prior to the movement of the foreign matter. Thus, the surface of the substrate to be processed can be cleaned, that is, the particles can be moved and removed from the functional part more reliably.
In other words, even when irregularities and steps are formed on the surface of the substrate, the trapping of particles by these three-dimensional structures can be avoided or reduced by selecting a path based on information obtained in advance. And the effect of movement and removal is improved.

  Further, according to the foreign matter removing method according to the present invention, in the structure information acquisition step, information such as the material, properties, surface microroughness and fracture stress of the substrate to be processed is obtained, and in the particle information acquisition step, the particle material, When information such as properties and fracture stress can be obtained and the information accumulated in the storage unit can be reflected in the selection of the particle movement path, the particle movement path must include irregularities and steps. In addition, it is possible to reduce the number of times of passing through these three-dimensional structures, and to avoid crushing and splitting due to wear and deformation when moving through the three-dimensional structures.

  In particular, if the priority of the movement target position selected in the position selection process is changed based on the movement path selected in the path selection process, or if an observation probe is prepared separately from the movement probe, for example, When confirming the movement path prior to the movement of the particles, it is possible to more reliably avoid crushing and breaking due to traps, wear and deformation during the movement of the particles, and to clean the surface. .

  In the present invention, in order to prevent malfunction of the functional area, it is desirable to move the detached foreign matter on the substrate to a non-functional area outside the functional area.

  In this case, in order to prevent the foreign matter that has moved into the non-functional region from moving again from the non-functional region to the functional region, the non-functional region is formed in a concave portion, and the foreign matter is placed in the concave portion. It is desirable to drop. Furthermore, it is desirable to remove or fix the foreign matter in the non-functional area.

  In this case, the surface of the non-functional region can be formed of a laser light good absorbency or a hardly absorbable material, and the foreign matter can be removed or fixed in the non-functional region by laser light irradiation. Furthermore, if the non-functional area is a scribe area of a semiconductor wafer, foreign substances can be removed simultaneously with the scribe for singulation.

  In addition to the above steps, in order to reliably remove the foreign matter from the base, a step or means for detecting the foreign matter attachment position on the base, the foreign matter attachment position, and its movement path It is preferable to further include a step or means for setting the position, a step or means for bringing the shearing force applying means closer to the adhesion position of the foreign matter, and a step or means for observing the adhesion position of the foreign matter.

  In this case, after the predetermined foreign matter is moved to the non-functional region, the shear force applying means is applied to the attachment position of the other foreign matter in order to remove all the other foreign matter remaining on the substrate. It is desirable to repeat the step of moving the other foreign matter to the non-functional region from the step of approaching.

  Further, after the step of moving the foreign matter to the non-functional area, the shear force is applied in at least one of the case where the movement is not performed and the case where the foreign matter is present in the movement path of the foreign matter. It is desirable for the reliable removal of foreign matter to perform the steps after the step of bringing the means closer to the foreign matter again. Further, it is desirable to check whether or not the shear force applying means is contaminated, and if it is contaminated, it is desirable to replace the shear force applying means.

  Further, an observation means for observing the adhesion position of the foreign matter may be provided separately from the shearing force applying means.

  Furthermore, in order to prevent foreign matter from adhering to the base from the shearing force applying means, the shearing force applying means is moved closer to the foreign matter attachment position after the shearing force applying means is cleaned. desirable.

  In addition, when a plurality of foreign substances are present close to each other on the substrate, the plurality of foreign substances adhering to the substrate are fixed to each other by irradiation with laser light and split during the movement to the non-functional area. It is desirable to set the attachment position of this fixed object after it does not. Instead of this, a plurality of the foreign substances adhering to the substrate can be aggregated together by spraying high-humidity gas, and the adhesion position of the aggregate can be set.

  Further, as the shearing force applying means, a probe that moves relative to the substrate can be used, and it is desirable that this probe be provided on a cantilever of an atomic force microscope.

  Furthermore, in order to move the foreign matter reliably, it is desirable that the probe is brought into substantially line contact or surface contact with the foreign matter at a plurality of locations.

  In addition, the probe is driven so that a force in a direction perpendicular to the substrate surface is applied to the probe as long as the substrate surface is not damaged, and the probe is prevented from sliding off on the substrate surface (foreign matter). However, it is also desirable to provide a function for increasing the horizontal driving force. Further, the height direction data of the substrate surface obtained by preliminary observation described later is retained, and the height of the probe when the probe is in contact with the foreign matter is kept constant with respect to the substrate surface. It is also desirable to drive to apply a vertical force to the probe.

  Further, prior to the step of detaching the foreign matter from the substrate and the step of removing the detached foreign matter outside the functional area, a structure information acquisition step of acquiring information on the surface structure of the substrate detected in advance. A particle information acquisition step for acquiring information on the foreign object detected in advance, a position selection step for selecting a priority order of the movement target position of the foreign object, and a route for selecting a movement path of the foreign object to the movement target position. It is also desirable to have a selection process.

  In the foreign matter removing apparatus according to the present invention, it is preferable that a storage unit for storing information on the surface structure of the substrate and information on the foreign matter detected in advance is provided.

  Next, preferred embodiments of the present invention will be described in detail with reference to the drawings.

First Embodiment According to this embodiment, as shown in FIGS. 1 to 2, a probe which is a shearing force applying means provided at the tip of the cantilever 1 of an atomic force microscope is used as an operating means. 2 is brought into contact with only the side surface of the foreign material 3 adhering to the functional region 4 without contacting the functional region 4 of the substrate 6 such as a semiconductor wafer or a stencil mask, and the foreign material 3 is sheared laterally. It is characterized in that it is separated from the functional area 4 by applying force and moved onto the non-functional area 5.

<Starting cleaning: Probe descending>
The process will be described in detail. First, as shown in FIG. 1A, the cantilever 1 provided with the probe 2 is lowered in the direction of the arrow in the figure with respect to the substrate 6 preliminarily cleaned by the conventional method. The foreign matter cleaning process (local cleaning) is started. For example, a piezo element or the like can be used for the lowering of the probe 2 and the later-described raising.

<Contact with foreign matter>
Next, as shown in FIG. 1 (b), the tip 9 of the probe 2 is physically brought into contact with the side surface of the foreign material 3 adhered on the functional region 4. At this time, the tip 9 of the probe 2 is not brought into contact with the functional region 4 in order to prevent the functional region 4 from being damaged.

<Movement of foreign matter to non-functional area>
Next, as shown in FIG. 1 (c), a horizontal shearing force is applied to the foreign material 3 from the probe 2 that is in contact with the side surface of the foreign material 3, thereby separating the functional region 4 from the surface. The foreign material 3 is moved on the surface of the substrate 6 by driving the probe 2 relative to the substrate 6 toward the non-functional region 5 in the direction of the arrow inside.

<Stopping movement of foreign matter in non-functional area>
Next, as shown in FIG. 2 (d), after moving the foreign material 3 onto the non-functional area 5, the driving of the probe 2 is stopped there to stop the movement of the foreign material 3.

<Probe rise>
Next, as shown in FIG. 2 (e), the probe 2 is raised in the direction of the arrow in the figure and detached from the foreign material 3.

<End of cleaning: laser light irradiation>
Next, as shown in FIG. 2 (f), the foreign matter 3 moved onto the non-functional region 5 is irradiated with laser light, and the foreign matter 3 is fixed in the non-functional region 5, for example, thereby cleaning the foreign matter. Can finish. Thereby, the reattachment of the foreign material 3 to the functional region 4 can be prevented. Further, the foreign material 3 may be removed from the non-functional region 5 by ablation by irradiating the foreign material 3 moved onto the non-functional region 5 with high-energy laser light.

  In the foreign matter removing step described above, for example, after the probe 2 is physically brought into contact with the side surface of the foreign matter 3, the probe 2 (or the substrate 6) is driven to give a shearing force to the foreign matter 3. 3 is moved from the functional region 4 to the non-functional region 5 on the surface of the substrate 6, but the surface of the probe 2 and the substrate 6 (on each functional region) is surely brought into contact with the side surface of the probe 2 and the foreign material 3. Is preferably shorter than the size of the foreign material 3.

  Further, for the probe 2 for moving the foreign matter 3, in order to move the foreign matter 3 reliably, the foreign matter 3 is brought into line contact or surface contact at a plurality of locations as will be described later, and for this purpose, the respective contact areas are increased. Such a shape is preferable.

  The movement of the foreign material 3 by the probe 2 is mainly performed on the surface of the substrate 6. In addition, it is desirable that a non-functional area 5 that is an area for finally collecting the moved foreign substances is prepared in advance on the substrate 6 from which the foreign substances 3 are removed. Further, the non-functional area 5 which is an area for finally collecting the moved foreign matter 3 is lowered from any place on the surface of the substrate 6 in order to make the foreign matter 3 easy to move there. In order to move the foreign material 3 to the non-functional area 5 at the shortest distance, it is desirable to dispose the non-functional area 5 at a plurality of locations. Further, it is desirable that the foreign matter 3 collected in the non-functional region 5 is removed (laser ablation or the like) or fixed on the non-functional region 5 by irradiation with a laser beam or a focused ion beam.

  According to the present embodiment, when removing the foreign material 3 adhering to the functional area 4 of the substrate 6, the foreign material 3 is detached from the substrate 6 by applying a shearing force to the foreign material 3. Even if the foreign matter 3 is firmly attached, the foreign matter 3 can be reliably detached from the functional region 4 on the substrate 6 by applying a shearing force exceeding the adhesion strength of the foreign matter 3 to the foreign matter 3. Since the shear force is applied only to the foreign material 3 and this shear force is not applied to the substrate 6, it is possible to prevent the substrate 6 from being damaged by the application of the shear force.

  In addition, since the probe 2 is physically brought into contact and the shearing force is applied to the foreign material 3, the foreign material 3 can be detached and moved with a force stronger than any adhesion force such as a liquid crosslinking force.

  Further, since the foreign material 3 is moved laterally on the surface of the substrate 6, there is no force component applied in a direction perpendicular to the surface of the substrate 6, and the surface of the substrate 6 is hardly damaged.

  In addition, since the strongly adhered foreign matter 3 that cannot be removed by electrostatic force or the like is removed by moving from the functional region 4 on the surface of the substrate 6, the number of foreign matter 3 attached to the surface (functional region) of the substrate 6 is almost equal. It is possible to achieve zero, achieving extremely high cleanliness, and recovering the function of the substrate 6.

<Other examples of cleaning>
FIG. 3 shows another example of foreign matter cleaning, in which a non-functional region 5 is formed lower than the concave portion 7 of the functional region 4. That is, by providing a step so as to descend from the concave portion 7 to the non-functional region 5, the foreign matter 3 can be easily moved from the concave portion 7 between the adjacent functional regions 4, and the foreign matter 3 can be easily collected. 5 is formed in the recess 57.

  In this case, as shown in FIG. 3A, the tip 9 of the probe 2 provided on the cantilever 1 is lowered toward the surface of the functional region 4 as shown by a broken line in the figure, so that the functional region 4 The side surface of the foreign material 3 attached to the concave portion 7 below the convex portion 8 is brought into contact. Further, as indicated by the arrows in the figure, the probe 2 applies shearing force to the foreign material 3 to separate it from the surface of the recess 7, and then moves the probe 2 toward the non-functional region 5 to remove the non-functional region 5. The foreign material 3 is dropped into the recess 57.

  Next, as shown in FIG. 3 (b), the movement of the probe 2 is stopped on the non-functional area 5 to stop the foreign substance 3 on the non-functional area 5. After the separation, the foreign matter 3 can be removed or fixed as described above, and the foreign matter cleaning step can be completed.

<Specific example>
4 to 5 are plan views showing specific examples of the foreign matter cleaning of the substrate.

  First, as shown in FIG. 4A, in order to remove a plurality of foreign substances 3 adhering to the concave portion 7 of the functional region 4 (for example, the wiring region) on the substrate 6, the concave portion 57 is formed on the outer peripheral portion of the substrate 6. A plurality of non-functional areas 5 (for example, non-wiring areas) having the above are arranged.

  Next, as shown in FIG. 4B, each foreign material 3 is moved in the direction of the arrow 7 in the drawing as described above to move onto the nearest non-functional region 5. At this time, since the concave portion 7 serving as the movement path of the foreign material 3 is lower than the wiring pattern, the foreign material 3 in the middle of movement does not rest on the wiring. Further, the foreign matter 3 adhering to the wiring pattern can be moved to the non-functional area 5 after the foreign matter 3 is dropped into the concave portion 7.

  As shown in FIG. 5C, since the concave portion 57 of the non-functional region 5 is lower than the concave portion 7, the foreign matter 3 moved into the non-functional region 5 does not jump out into the functional region 5 including the concave portion 7 again.

  Next, as shown in FIG. 5D, the foreign matter 3 existing in each non-functional region 5 is irradiated with laser light to be fixed to the non-functional region 5 to form a fixed foreign matter 3a, or laser ablation. To cauterize and remove the foreign material 3. Thereby, the foreign object cleaning is finished.

<Flow chart of basic operation of foreign matter removing apparatus>
Next, as shown in FIG. 6, a flowchart 1 of a basic operation of the foreign matter removing apparatus according to the present embodiment will be described.

  First, when there is a large amount of foreign matter adhering to a semiconductor wafer or the like as a substrate to be processed, Step 1 (preliminary cleaning) is performed to reduce the number of attached foreign matters by a conventional cleaning method or the like in advance.

  Next, step 2 is performed in which inspection is performed by an inspection unit that is a unit for detecting the adhesion position of the foreign matter on the substrate to be processed. In this inspection, for example, when the size of the foreign matter is 4 to 23 nm, the inspection is performed with an SEM, and when the size of the foreign matter is 200 nm or more, the inspection is performed with an optical microscope to detect the attachment position of the foreign matter.

  Next, the process 3 which arrange | positions a to-be-processed substrate on a stage by well-known means, such as back surface adsorption | suction and edge adsorption | suction, is performed.

  Next, the step 4 of setting the foreign matter adhesion position is performed by the step 12 of introducing data on the foreign matter adhesion position detected by the inspection performed in advance into the control unit (computer) of the foreign matter removing apparatus.

  Next, step 5 is performed in which information on the important functional area of the substrate and the non-functional area where the adhered foreign substance is moved is set by the apparatus control unit to set the movement path data of the foreign substance.

  Next, the process 6 which calculates the movement path | route of a foreign material is performed. About this, the path | route with a short distance from the adhesion position of a foreign material to a non-functional area | region is preferable. In addition, a foreign object that is surrounded by the functional area of the substrate and difficult to remove is determined. This route may be set manually.

  Next, Step 7 is performed in which the probe is placed on the substrate in the proximity region of the foreign matter by means of approaching the probe. For example, a position within 10 μm from the foreign matter is preferable from the viewpoint of processing time. This probe placement is performed in step 13 based on the data when the foreign matter attachment position is set.

  Next, a step 8 is performed in which the probe is vibrated in the direction perpendicular to the surface of the substrate, and the surface shape of the substrate in the vicinity of the foreign material is observed, and the adhesion position of the foreign material is confirmed with a precision of 10 μm and preliminary observation is performed. . This observation can be performed in a non-contact mode (tapping) using a known atomic force microscope (AFM). Furthermore, the process 14 which correct | amends the error of both data is performed by comparing the data obtained by this preliminary observation, and the data when the adhesion position of a foreign material is set.

  Next, step 9 of moving the foreign matter is performed by bringing the probe into contact with the side surface of the foreign matter and driving it along the route obtained when the movement route of the foreign matter is calculated. At this time, the distance between the probe and the surface of the substrate is preferably kept smaller than the size of the foreign matter.

  Next, after driving the probe to the driving end point and moving the foreign matter to the non-functional region of the substrate, a step 10 is performed for removing the probe from the surface of the substrate.

  Next, for other foreign matters that are designated in the foreign matter attachment position setting step and are determined to be movable when calculating the movement path of the foreign matter, a probe is placed in the proximity region of the foreign matter. After moving to the probe driving end point, the step 10 of detaching the probe from the substrate surface is repeated, and the step 15 of moving to the non-functional region without leaving any movable foreign matter on the substrate is performed.

  Next, the process 11 which carries out the to-be-processed substrate from which each foreign material was removed completely from the stage is performed, and a foreign material removal process is completed.

Second Embodiment In the present embodiment, according to the flowchart 2 of the basic operation of the foreign matter removing apparatus shown in FIG. 7, the step 10 of driving the probe to the driving end point and detaching the probe from the surface of the substrate, The process is the same as that of the first embodiment except that a process 16 for re-observing the proximity region of the adhesion position of the foreign substance is provided between the process 11 and the process 11 for unloading the substrate.

  That is, after performing the step 10 of driving the probe to the driving end point and detaching the probe from the surface of the substrate, the same region as the preliminary observation performed in the step 8 of preliminarily observing the proximity region of the adhesion position of the foreign matter Step 16 is observed again. If it is found that the foreign object has not moved in the re-observation process in this area, the process returns to the step 9 in which the probe is driven according to the calculated path by contacting the probe with the side surface of the foreign object within the designated number of times. The process 17 which tries to move a foreign material is performed.

  If the position of the foreign object does not change in step 17 within the designated number of times, it is recorded and displayed on the computer that the foreign object cannot be moved.

  According to the present embodiment, in order to perform the step 16 of re-observing the proximity region of the foreign matter attachment position, when performing the foreign matter removal step, the presence or absence of foreign matter at the foreign matter attachment position is confirmed. The remaining foreign matter can be surely removed.

  In addition, in the present embodiment, the same operations and effects as described in the first embodiment described above can be obtained.

Third Embodiment In the present embodiment, in accordance with the basic operation flowchart 3 of the foreign matter removing apparatus shown in FIG. 8, the step 16 of observing again the proximity region of the foreign matter adhesion position and the step of unloading the substrate to be processed from the stage 11 is the same as the second embodiment described above except that it includes a step 18 of observing the path on which the probe is driven.

  That is, the step 18 of observing the surface shape of the substrate in the non-contact mode along the path in which the probe is driven by the step 9 in which the probe is brought into contact with the side surface of the foreign substance and the probe is driven according to the calculated path. Make sure that no crushed foreign matter is attached. If foreign matter or crushed material of foreign matter is attached, the foreign matter is moved to the non-functional region by the step 9 of driving the probe according to the calculated path by bringing the probe into contact with the side surface of the foreign matter. Further, the new observation data obtained by the step 16 of re-observing the proximity region of the adhesion position of the foreign substance can be used for observation on the path.

  Further, the step 7 to the step of arranging the probe in the proximity region of the foreign matter specified in the step 4 for setting the adhesion position of the foreign matter and determined to be movable in the step 6 for calculating the movement path of the foreign matter. By repeating the step 18 of observing on the path that drives, if a foreign object or a fragment thereof is present, a step 19 is also performed in which these move similarly.

  According to the present embodiment, in order to perform the step 18 for observing the path on which the probe is driven, when performing the foreign matter removal step, the presence or absence of foreign matter remaining in the foreign matter moving path is confirmed and The removed foreign matter can be surely removed.

  In addition, in the present embodiment, the same operations and effects as described in the second embodiment described above can be obtained.

  Next, examples of the present invention that further embody the above-described embodiment will be described.

Example 1
FIG. 9 shows a specific structure of the foreign matter removing apparatus 10a used in the above-described first to third embodiments.

  In the structure of the foreign matter removing apparatus 10a, a substrate introduction port 18 for introducing a substrate 22 to be processed (corresponding to the substrate 6 described above) into the apparatus 10a, a cantilever replacement window 23 for exchanging the cantilever, and an exhaust 17 An exhaust port 16 and a clean air inlet / outlet port 56 are provided in the housing 11.

  Further, clean air is supplied into the chamber 13 in the direction of the arrow in the drawing through the air filter 14 provided outside the clean air inlet / outlet 56 and the diffuser 12 provided at the upper portion of the chamber 13 of the apparatus 10a. The By reducing the speed of air and preventing the occurrence of turbulence by the diffuser 12, the disturbance to the observation / cleaning unit 20 can be reduced.

  A substrate 22 to be processed is placed on a susceptor 24 on an XY stage 19 that can move in the X and Y directions from the substrate introduction port 18 by a substrate handling machine such as a manual or robot arm. The XY stage 19 can move in the horizontal direction in order to fix the substrate 22 to be processed with a vacuum chuck or the like and to arrange the region to be processed with respect to the observation / cleaning unit 20.

  In addition, in the observation / cleaning unit 20 arranged on the substrate 22 to be processed by the support 15, a head portion of an existing atomic force microscope (AFM) may be used. Here, the head part of the atomic force microscope refers to an apparatus unit that holds the cantilever or controls the operation of the probe 21, for example. The detailed structure of the observation / cleaning unit 20 will be described later.

Example 2
FIG. 10 shows a specific example of the non-functional region 5 on the substrate 6 where foreign matter cleaning is performed.

<Before wiring process>
First, as shown in FIG. 10A, on the surface of the substrate (semiconductor wafer) 6 before the wiring process, one non-functional region 5a is placed on a lattice-like scribe line 25 provided so as to surround the functional region 4. And The scribe line 25 is a place where dicing is finally performed, and does not require high-precision processing as in the node portion. Therefore, even if foreign substances are gathered on the scribe line 25, the function of the functional region 4 on the surface of the substrate is not impaired.

<After wiring process: Detailed view of part A>
Next, as shown in FIG. 10B, which is an enlarged detailed view of part A in FIG. 10A, on the surface of the substrate 6 after the wiring process, in a portion other than the wiring region (functional region 4), For example, by creating the non-functional area 5 such as a dummy area, foreign substances can be effectively removed as shown in FIG.

  Further, when removing the foreign matter adhering to the non-functional region 5 by the laser light irradiation, the non-functional region 5 is formed of a laser light good absorption material that easily absorbs the irradiation laser light, such as metal or silicon. Is preferred. On the other hand, when foreign matter adhering to the non-functional region 5 is fixed by laser light irradiation, it is formed of a material that hardly absorbs laser light such as SiO2, Si3N4, and sapphire. Is preferred.

Example 3
FIG. 11 shows a specific example in which foreign matter cleaning is performed on a stencil mask having a membrane structure, for example, an electron beam exposure mask such as the LEEPL stencil mask 26 (however, other exposure masks such as an X-ray exposure mask). The same applies to.

  As shown in the plan view of FIG. 11A and the AA ′ line cross-sectional view of FIG. 11B, for example, the stencil mask 26 performs electron beam exposure at the portion where the exposure pattern opening 28 is provided. It becomes a functional area. In this functional region, a physically fragile membrane having a film thickness of, for example, about 500 nm is supported by a reinforcing beam (substrate portion) 27 as a non-functional region. In this way, they are collected on the reinforcing beam 27. Therefore, it is desirable that the non-functional region irradiated with the laser beam or the focused ion beam for removing or fixing the foreign matter described above is on the reinforcing beam 27.

Example 4
FIG. 12 shows a flowchart 4 of the foreign matter removing apparatus, and FIG. 13 shows the foreign matter removing apparatus 10b.

  A cantilever replacement portion 30 having a predetermined shape having a cantilever replacement indicator 37 and a cantilever replacement window 34 is provided outside the cantilever replacement window 23. Further, a guide 29 for driving the observation / cleaning unit 20 in the horizontal direction is provided from the observation / cleaning unit 20 in the chamber 13 to the cantilever replacement unit 30. In addition, an inner bottom portion of the cantilever exchanging portion 30 is provided with a cantilever handling machine portion 32, a cantilever hand portion (electromagnet) 33, a spare cantilever stage 36 holding a spare cantilever group, and the like. Except that the reference substrate 31 is provided on the stage 19, it is the same as in the first embodiment.

  In this embodiment, the observation / cleaning unit 20 can move between the substrate 22 and the cantilever replacement unit 30 on the guide 29. In addition, an XY stage on which a substrate 22 is disposed in order to inspect whether or not foreign matter has adhered to the probe 21 of the observation / cleaning unit 20 and to perform a replacement step 19 if the foreign matter is contaminated. 19 is provided with a reference substrate 31 for inspecting with an AFM image, and the inspection / cleaning unit 20 is moved from the position P1 of the guide 29 to the position P2 and inspected by the substrate 31. This inspection is performed by confirming whether or not the observation image of the probe on the reference substrate 31 is disturbed if foreign matter is attached to the probe.

  Further, in the cantilever exchanging unit 30, a space for exchanging the cantilever automatically or manually is provided. For example, when the observation / cleaning unit 20 is moved from the position P2 of the guide 29 to the position P3 and the cantilever is manually replaced, the cantilever replacement indicator 37 informs the user that the probe 21 is dirty. Inform and encourage exchange.

  Alternatively, when replacing the cantilever automatically, for example, after removing the dirty cantilever, attach the cantilever to an appropriate jig, such as the pre-mount probe provided by Toyo Technica, and replace it. It is desirable to make it easier.

  For example, after the probe 21 of the observation / cleaning unit 20 is removed through the replacement window 34, the cantilever handling unit 33 of the cantilever handling machine unit 32 is magnetically attached to a jig such as stainless steel in the pre-mounted probe. The pre-cantilever group 35 on the pre-cantilever stage 36 that is attracted and fixed is operated, and a new cantilever is taken out by handling with an electromagnet, and this is attached to the fixed portion of the observation / cleaning unit 20.

Example 5
FIG. 14 shows a basic operation flowchart 5 of the foreign matter removing apparatus. This includes a step 7 ′ of placing an observation probe in the proximity region of the foreign matter between the step 6 of calculating the movement path of the foreign matter and the step 8 of preliminarily observing the proximity region of the foreign matter attachment position. Is the same as in the second embodiment described above. Before the step 16 of re-observing the proximity region of the foreign matter adhesion position, the cleaning probe is brought into contact with the side surface of the foreign matter and the probe is driven according to the calculated path, and the cleaning probe is driven to the driving end point. Having the step 10 of detaching the probe from the surface of the substrate after completion is the same as in the second embodiment described above.

  In this embodiment, the step 7 ′ for arranging the observation probe on the substrate in the proximity region of the foreign matter is performed. However, for this placement, a position within 10 μm from the foreign matter is preferable from the viewpoint of processing time.

  Also, the cleaning probe is brought into contact with the side surface of the foreign substance and the process of moving along the path obtained in the process of calculating the foreign substance movement path is the same as in the second embodiment described above. . At this time, the distance between the probe and the surface of the substrate is kept smaller than the size of the foreign matter. The arrangement of the cleaning probe and the observation probe is adjusted by a specified distance.

  According to this embodiment, the probe is divided into an observation type and a cleaning type, and the observation and cleaning probes are arranged adjacent to each other, thereby preliminarily observing the proximity region of the foreign matter adhesion position and again. Foreign matter cleaning operations such as an observation step, a step of bringing the cleaning probe into contact with the side surface of the foreign matter, driving the probe according to the calculated path, and a step of repeating within a specified number of times when the foreign matter has not moved It can be done smoothly.

  In addition, in this example, the same operation and effect as described in the second embodiment described above can be obtained.

  Next, FIG. 15 shows an observation / cleaning unit 20 in a specific foreign matter removing apparatus based on the flowchart 5.

  First, as shown in the cross-sectional view along the line AA ′ in FIG. 15A, a cleaning probe placement portion 41 having a cleaning probe 40, a probe jig 47, and a probe jig fixture 38, an observation probe 39, and a probe An observation probe placement portion 42 having a jig 47 and a probe jig fixture 38 is provided at the lower portion of the support 15.

  Then, as shown in the bottom view of FIG. 15B, the cleaning probe 40 and the observation probe 39 are arranged to face each other on the probe scanning axis 2 with the probe scanning axis 1 interposed therebetween.

  Regarding the driving of each of these probes, the probe for the other work should be set so that the probe height is separated from the substrate as much as possible while lifting the cantilever while performing one work of observation or cleaning. Yes, do not disturb each other's work. For example, in a known technique of an atomic force microscope, control is performed using a value that is a set point for setting the probe height. The value of the set point represents the voltage that drives the piezo element that controls the position of the susceptor of the cantilever.

  As shown in FIG. 15C, the observation probe 39 is provided at the lower part of the tip of the cantilever 1 to be joined to a probe jig 47 such as stainless steel, and the probe jig 47 is attached to the probe jig fixture 38. This can be easily performed by the attractive force of the magnet in the fixing device. The same applies to the cleaning probe 40. Such a probe and its mounting structure are the same in the examples described above.

  In FIG. 16A, the cleaning probe 40 and the observation probe 39 are disposed diagonally opposite to each other with the probe scanning axis 2 interposed therebetween so that the probes 39 and 40 are positioned on the probe scanning axis 1. An example of mutual arrangement is shown.

  In this case, as shown in FIG. 16B, laser beam irradiation optical axes 58a and 58b for detecting the heights of the observation and cleaning probes 39 and 40 are set in the probe placement portions 41 and 42, respectively. To do. Then, the laser irradiation light 46 is branched from one laser light source 43 to two optical axes 58a and 58b by a branching device 44a composed of a half mirror, a mirror, or a prism mirror, and reflected from the cantilever surfaces of the probes 39 and 40. The transmitted light is guided from each optical axis to one branching device 44b. Thereby, as shown below, the height of each probe 39 and 40 can be controlled with one header. It should be noted that the distance between the observation and cleaning probes 39 and 40 is adjusted at the time of exchanging the cantilever so as to be constant.

  As shown in FIG. 16C, the laser beam 46 from the laser light source 43 is reflected on the top surface of the tip of the cantilever 1 of the atomic force microscope, which is disposed inclined with respect to the surface of the substrate 6, and this reflection. The laser beam 46 thus incident enters the optical position detector 45 from the splitter 44b, and the height of the observation probe 39 corresponding to the incident amount can be measured. The same applies to the cleaning probe 40. Each probe can be controlled to move in the vertical direction by a lifting mechanism (not shown).

Example 6
FIG. 17 shows a specific example of the cleaning probe 40 described above (however, the other cleaning probes described above are also the same). The radius of curvature of the tip of the probe 40 is, for example, 10 nm. This probe is formed, for example, by growing Si on a Si seed crystal.

  FIG. 17A shows a typical conical probe shape. 17 (B) to 17 (E) are modified examples thereof, and various cross-sectional views corresponding to the AA ′ line in FIG. 17 (A) show various probe shapes. In order to surely move the foreign matter, it is desired to increase the contact area of the probe with the foreign matter during driving of the probe so as to be in line contact or surface contact at a plurality of locations.

  For example, as shown in FIG. 17 (B), according to the cross-sectional shape of the acute-pointed cross, the contact area between the probe 40 and the foreign matter increases in the deep recess 48 of the probe 40 according to the movement. The foreign matter can be moved in one direction more efficiently and reliably.

  Further, as shown in FIG. 17C, in the cross-sectional shape in which the thickness of the probe is larger than that in FIG. The area is also increased, and the foreign matter can be efficiently moved in one direction.

  Alternatively, as shown in FIG. 17D, a rectangular cross-sectional shape may be used.

  In addition, as shown in FIG. 17E, if a rectangular cross-sectional shape is used, and the long sides of the rectangle are arranged so as to intersect (especially perpendicular) to the movement direction, the contact area with the foreign matter increases and the movement is easy. .

  Further, as shown in FIG. 18 (A), a plurality of cleaning probes 40 are provided adjacent to each other, and for example, four probes are provided as shown in FIG. It is preferable to arrange them in an equiangular positional relationship.

  That is, by arranging the four probes 40 having a quadrangular cross section regularly at each vertex of the square corresponding to the moving direction, the contact area between the probe 40 and the foreign matter can be increased and the foreign matter can be moved more efficiently. it can. In addition to such a probe assembly, carbon nanotubes or the like that are bundled into a filamentous bundle of, for example, 50 nm or less can also be used as a probe. In addition, the sharp angle at the probe tip is lowered, and the component force on the probe surface caused by the horizontal driving force of the probe is reduced. For example, the acute angle is set to 10 ° or less.

Example 7
FIG. 19 shows a basic operation flowchart 6 of the foreign matter removing apparatus. This includes a step 20 for cleaning the surface of the cleaning probe between the step 6 for calculating the moving path of the foreign matter and the step 7 ′ for arranging the observation probe in the proximity region of the foreign matter. This is the same as the fifth embodiment.

  In this embodiment, the surface of the cleaning probe is cleaned, but this is preferably done by a method that does not generate dust and damage the surface of the probe. Remove foreign material. This adhesive tape is preferably a backgrind adhesive tape on the surface of a semiconductor. Therefore, according to the present embodiment, the surface of the cleaning probe can be cleaned without generating dust and damaging the surface of the probe. Further, Step 15 is repeated for movable foreign matter from Step 20 for cleaning the surface of the cleaning probe to Step 16 for re-observing the proximity region of the foreign matter adhesion position.

  In addition, in this example, the same operations and effects as described in the above-described fifth embodiment can be obtained.

  FIG. 20 shows a foreign matter removing apparatus 10c that cleans such a probe. In this apparatus, the observation / cleaning unit 20 can move on a guide 29 provided in the chamber 13, and a probe cleaning unit 49 is provided on the side of the substrate 22 to be processed on the susceptor 24. Is the same as in the first embodiment.

  When the foreign matter is specifically removed by applying the flowchart 6 described above, the probe cleaning unit 49 provided on the side of the XY stage 19 on which the substrate to be processed 22 is arranged generates dust itself. For example, it is desirable to use a back-grind adhesive tape on the semiconductor surface and contact the probe with this tape to separate foreign matter on the probe surface.

  The probe can be cleaned by moving the observation / cleaning unit 20 at the position P1 in the drawing to the position P2.

Example 8
FIG. 21 shows a basic operation flowchart 7 of the foreign matter removing apparatus. This includes a step 21 for fixing or removing the foreign matter moved to the non-functional region between the step 16 for re-observing the proximity region of the adhesion position of the foreign matter and the step 11 for unloading the substrate to be processed from the stage. Other than the above, the second embodiment is the same as the second embodiment.

  In this embodiment, a laser beam, a focused ion beam, or the like is irradiated in order to fix or remove the foreign matter in the non-functional area where the foreign matter has been moved. For example, when irradiating a laser beam, the foreign matter is detached or fixed on the substrate surface, and when the focused ion beam is irradiated, the foreign matter is etched.

  According to the present embodiment, the foreign matter can be fixed or removed in the non-functional region, so that the reattachment of the foreign matter to the functional region can be prevented.

  In addition, in the present embodiment, the same operations and effects as described in the second embodiment described above can be obtained.

  FIG. 22 shows an example of a specific foreign matter removing apparatus that fixes or removes foreign matter using laser light based on the flowchart 7 described above.

  The foreign matter removing apparatus 10d of this example includes a suction nozzle 54 that has a valve 53 and moves freely in the XY directions, and receives laser light 46 from a laser light source 43 via an irradiation position / intensity control system 50. Except for using a laser irradiation means for irradiating a non-functional region on the substrate to be processed 22 through an optical window 51 provided on the upper part of the foreign matter removing apparatus 10d, it is the same as the foreign matter removing apparatus 10c shown in FIG. is there.

  The irradiation position / intensity control system 50 includes, for example, an attenuator such as an ND filter, a heligon mirror, and an fθ lens. The irradiation position / intensity control system 50 moves freely in the XY directions so that an arbitrary point on the surface of the substrate 22 to be processed has a uniform area and intensity. Can be irradiated. In this case, the XY stage 19 on which the substrate 22 to be processed is also moved freely in the XY direction, so that the optical axis of the laser beam 46 to be irradiated may be fixed.

  For the laser light 46 to be irradiated, for example, a harmonic of a solid-state laser such as an Nd: YAG laser or a YLF laser is preferably used. It is desirable to use the second harmonic when fixing foreign matters and to use the third harmonic when removing foreign matters.

  In the process of fixing or removing the foreign matter that has moved to the non-functional area, the observation / cleaning unit 20 is retracted to the cantilever replacement unit (not shown) or in front of it so as not to block the laser light 46.

  Further, when the laser beam 46 is irradiated, the nozzle 54 is evacuated and sucked at the irradiation position, so that gas or dust generated during the removal or fixation of the foreign matter is reattached to the surface of the substrate 22 to be processed. Can be prevented.

  In the foreign material removing apparatus 10e shown in FIG. 23, the optical axis of the laser beam 46 to be irradiated is fixed, and the laser beam 46 is irradiated from the vertical direction to the substrate 22 to be processed to remove the foreign material. In this case, by moving the observation / cleaning unit 20 on the guide 52, the laser beam 46 can be irradiated to a position where the observation / cleaning unit 20 is not blocked by the laser beam 46.

  In the foreign matter removing apparatus 10f shown in FIG. 24, the foreign matter is fixed to the non-functional region. In this case, it is preferable that the irradiation angle of the laser light 46 with respect to the surface of the substrate 22 to be processed is lower than the vertical angle. This is because the surface of the substrate to be processed 22 is difficult to absorb the laser light 46 and the ratio of the energy that the foreign matter itself absorbs the laser light 46 increases. Further, in the case of fixing, after moving all the foreign matters to the non-functional region, for example, laser CVD may be applied in another chamber so that the foreign matters are solidified with a local deposition material by laser CVD.

  Next, based on the flowchart 7 described above, a specific foreign matter removing apparatus (not shown) that etches foreign matter using a focused ion beam will be described.

  In this example, the lens barrel of the focused ion beam processing machine is connected to the foreign matter removing apparatus, and the position data of the previous non-functional area where the foreign matter has been moved is introduced into the control computer of the focused ion beam processing machine. Thereafter, the focused ion beam is irradiated to the position indicated by the introduced data, and the foreign matter is removed by etching from the surface of the substrate to be processed. Since the energy of the focused ion beam is smaller than the energy produced by the laser beam, the foreign matter cannot be removed, but it is possible to etch the foreign matter having a size of 100 nm or less.

Example 9
FIG. 25 shows a basic operation flowchart 8 of the foreign matter removing apparatus. This includes a step 22 of repeatedly irradiating the foreign matter with a laser beam having a low incident angle and a low energy density between the step 3 of placing the substrate to be processed on the stage and the step 4 of setting the attachment position of the foreign matter. Except for this, the second embodiment is the same as the second embodiment.

  In this embodiment, the adhered foreign matter is irradiated with laser light, and the foreign matters constituting the foreign matter adhered on the substrate are fixed to form an aggregate of foreign matters. The irradiation angle of the laser beam on the substrate to be processed is preferably an angle lower than the normal angle of the surface of the substrate to be processed, and the pulse width such as the second harmonic of the Nd: YAG pulse laser is used. Is repeatedly irradiated with a pulsed laser beam of 5 ns or more at a low energy density of 350 mJ / cm 2 or less.

  According to the present embodiment, by performing laser irradiation on the substrate to be processed at a low angle, the substrate to be processed itself becomes difficult to absorb the laser light, and foreign matter is not contributed to the instantaneous thermal expansion of the substrate surface. Heated more aggressively. Further, by repeatedly performing laser irradiation at a low energy density, it is possible to agglomerate adhering foreign matter without detaching from the surface of the substrate to be processed, and move the agglomerate to a non-functional region for removal.

  In addition, in the present embodiment, the same operations and effects as described in the second embodiment described above can be obtained.

  An example (however, not shown) of a specific foreign matter removing apparatus applied to the flowchart 8 will be described.

  The structure of this foreign matter removing apparatus is the same as that of the foreign matter removing apparatus 10e for fixing the foreign matter by fixing the optical axis of the laser beam as shown in FIG. In order to form a foreign substance aggregate composed of a plurality of foreign substances, for example, a second harmonic of an Nd: YAG pulse laser is used as an irradiation laser beam used for aggregating the foreign substances, and the energy density is 350 mJ / cm <2>. For example, an ND filter can be disposed in the irradiation position / intensity control system.

Example 10
FIG. 26 shows a basic operation flowchart 9 of the foreign matter removing apparatus. This is the same as the above except that the step 23 of locally blowing high-humidity gas to the foreign matter is provided between the step 3 of placing the substrate to be processed on the stage and the step 4 of setting the adhesion position of the foreign matter. The same as in the ninth embodiment.

  In this embodiment, a foreign substance adhering to the surface of the substrate to be processed is irradiated with a high-humidity atmosphere, and the adhering foreign substances are strongly bonded to form an aggregate of foreign substances. At this time, when the relative humidity becomes 70% or more, a liquid cross-linking phenomenon actively occurs in the capillary portion in the aggregate, and the liquid cross-linking force makes it difficult to split during the movement of the foreign substance aggregate.

  According to the present embodiment, since the aggregates of foreign substances are difficult to break during the movement, the number of movements of the foreign substances can be reduced, and the foreign substances can be efficiently and surely moved to the non-functional area. The same applies to the ninth embodiment.

  In addition, in the present embodiment, the same operations and effects as described in the ninth embodiment can be obtained.

  Next, an example of a specific foreign matter removing apparatus based on the flowchart 9 will be shown.

  This example is the foreign substance removing apparatus 10g shown in FIG. 27, and is the same as the foreign substance removing apparatus 10c shown in FIG. 20 except that it has a nozzle 64 that blows the high-humidity gas 55 onto the substrate 22 to be processed.

  In this example, a high humidity gas having a relative humidity of 70% or more is blown locally to the adhesion position of the foreign substance by the nozzle 64 to aggregate the foreign substance to form an aggregate. However, care must be taken so that the surface of the substrate 22 itself is not condensed.

Example 11
In this embodiment, a method of preventing the probe from sliding off the foreign material surface by driving the probe so as to apply a force in a direction perpendicular to the surface of the substrate to the extent that the substrate surface is not damaged will be described.

  As shown in FIG. 28, the force that the probe 2 applies to the foreign material 3 in the direction parallel to the substrate surface also brings about the component force in the direction parallel to the probe surface. If the former force is greater than the static frictional force between the foreign object and the substrate surface, and the latter force is greater than the frictional force between the probe surface and the foreign object, the probe will have an upward force on the probe surface. work. In this case, the probe slides on the surface of the foreign material and cannot drive the foreign material.

  In order to prevent such a probe from slipping, as shown in FIG. 29, it is desirable to apply a force in a direction perpendicular to the surface of the substrate to the extent that the substrate surface is not damaged. Since the force causes a component force in a direction parallel to the probe surface to act downward on the probe surface, the above-described force causing the probe to slide up can be offset.

  For example, in the case of the silicon substrate surface, the bending stress of the substrate is about 1 GPa. Therefore, when the probe tip has a radius of 10 nm, the driving force in the direction perpendicular to the substrate plane in the range where no damage occurs is about 300 nN. Since the force in the direction perpendicular to the substrate surface is determined by the displacement of the cantilever and its spring coefficient, the force applied is controlled by using a set point for determining the displacement or a cantilever having an arbitrary spring coefficient.

Example 12
In this embodiment, the data in the height direction of the substrate surface obtained by preliminary observation is held, and the height of the probe is constant when the probe is in contact with a foreign object so that the height of the probe is constant. A method of driving to apply a directional force to the probe is shown.

  In the method of applying a force perpendicular to the substrate surface to the probe as shown in the above embodiment, the height of the probe for removing foreign matter is controlled so as to trace the height data of the substrate surface obtained by preliminary observation. To do. As the probe begins to slide over the foreign object, the height of the probe increases. To prevent this rise, the probe is driven perpendicular to the substrate surface. As a result, it is possible to drive the foreign material in the horizontal direction while more reliably preventing damage to the substrate surface itself.

  As shown in FIGS. 30A to 30D, a portion where the foreign material 3 is present in the preliminary observation is detected by measurement data in the height direction. The original height data under the foreign substance can be derived from the measurement data at a position close to the position where the foreign substance is attached or data introduced in advance. When the probe that removes foreign matter is driven horizontally, the height data starts to rise upward when it touches the side of the foreign matter, and the height data value starts to rise. To drive. Generally, since the static friction force is larger than the dynamic friction force, the pressing force of the probe after starting to move can be small.

Example 13
Subsequently, a more preferred embodiment will be described.
According to the foreign matter removing method according to this embodiment, for example, the following problems are also improved.
(1) Most of the semiconductor surface or photomask surface has irregularities larger than the size of the particles (see FIGS. 35 and 36). For this reason, as shown in FIG. 35, when a simple probe operation is performed, the particles 113 are caught by the projections and depressions, making it difficult to move. In particular, it is difficult to move the particles 113 from a low portion of the pattern on the semiconductor surface or photomask surface to a high portion.
(2) When the particle 113 moves, the probe 95 comes into contact with the unevenness 118, and pattern destruction or probe breakage occurs.
(3) When a plurality of particles 113 are gathered, the particles 116 may be finely crushed by an impact when passing through the pattern irregularities 118, and it is difficult to remove.
(4) If there are irregularities in the grain boundaries, surface roughness (microroughness), etc. on the pattern, there will be rolling resistance during the movement of the particles, which may cause scraping and deformation, and particle removal is difficult.

  In this embodiment, prior to the step of removing the foreign matter from the substrate and the step of removing the separated foreign matter outside the functional area, a structure information acquisition step of acquiring information on the surface structure of the substrate detected in advance. A particle information acquisition step for acquiring information on the foreign object detected in advance, a position selection step for selecting a priority order of the movement target position of the foreign object, and a route for selecting a movement path of the foreign object to the movement target position. The foreign substance removal method which performs a selection process is shown.

An example of a foreign matter removing apparatus used in the foreign matter removing method according to the present embodiment will be described. As shown in FIG. 31A, the apparatus has at least a foreign matter removing apparatus 10h and an accumulating unit 73 for accumulating information detected in advance, for example, by data storage.
In this embodiment, the cleaning assembly 71 constituted by the foreign matter removing apparatus 10h according to the present invention is integrated with the foreign matter removing apparatus 10h or separately from a cleaning target substrate to be processed, such as a semiconductor device. An input unit 74 for inputting planar pattern data on the surface of the substrate wafer, a structure information detecting unit 75 for detecting the three-dimensional structure information on the surface of the substrate to be processed, for example, a foreign matter adhering to the surface of the substrate to be processed, For example, a particle information detection unit 76 using an electron microscope and a physical property inspection apparatus is included.

In the present embodiment, as shown in FIG. 1B, the foreign substance removal apparatus 10h has a substrate 22 to be processed placed on an XY stage 19 provided in the chamber 13 and capable of two-dimensional movement in a horizontal plane. It has a susceptor 24 and is provided with an observation / cleaning unit 20 using, for example, a probe (not shown) facing the surface of the substrate 22 to be processed placed on the susceptor 24.
The substrate to be processed 22 is, for example, a semiconductor wafer, a photomask, another substrate to be processed, and the like, hereinafter referred to as a substrate to be processed (semiconductor wafer).

The observation / cleaning unit 20 is configured using, for example, a known atomic force microscope head. The head portion has a probe and a device portion (not shown) that holds the cantilever and controls the operation of the probe. This probe can be configured to have the function of detecting the presence or absence of particles, the function of detecting the surface shape and state of the substrate 22 to be processed, in addition to the main movement of particles.
Further, clean air is introduced into the chamber 13 by the air filter 14 and the diffuser 12 so as to reduce the disturbance to the observation / cleaning unit 20 by the down flow in which the low flow velocity and the turbulent flow are prevented.
The substrate to be processed 22 and the observation / cleaning unit 20 can be replaced through the substrate to be processed inlet 18 and the cantilever replacement window 23 as necessary.

The input unit 74 is input with two-dimensional structure information, that is, plane pattern data, relating to the surface of the semiconductor device 8 serving as a substrate to be processed. Sent.
The structure information detection unit 75 includes a surface inspection apparatus, and is formed on the surface of the substrate 22 to be processed. The pattern data, material, and surface of the three-dimensional structure such as irregularities, steps, and properties due to semiconductor elements and wiring patterns are formed. It has a function of detecting roughness, particle data such as the position (XY coordinates), particle size, and number of attached particles, and the obtained structure information is sent to the storage unit 73 and the particle information detection unit 76. It is done.

The particle information detection unit 76 is composed of an electron microscope and a physical property inspection device used for particle observation and physical property inspection, and is attached to the surface of the substrate to be processed based on the structural information obtained by the structural information detection unit 75. The particle has a function of detecting the material, shape, and the like, and the obtained particle information is sent to the storage unit 73, and the substrate to be processed 22 is cleaned based on the information.
At this time, if measurement results or estimation information related to the composition of the particles are obtained, these are also input to the particle information detection unit 76 or the storage unit 73 as necessary.
In FIG. 31A, solid arrows indicate the flow of data, and broken arrows indicate the flow of the substrate to be processed.

Next, the foreign matter removing method according to the present embodiment will be described with reference to the foreign matter removing apparatus 1 shown in FIG. 31 and the flowchart shown in FIG.
First, as shown in step S0 (particle information detection step) in FIG. 32, the substrate to be cleaned is cleaned by the structure information detection unit 75 and the particle information detection unit 76 described above before the foreign matter removal method according to the present embodiment. In this example, particle information such as the position, particle size, and composition of particles adhering to the surface of the substrate (semiconductor wafer) 22 is detected in advance.
In addition, structural information regarding the three-dimensional structure such as irregularities, steps, and properties due to the surface shape of the substrate (semiconductor wafer) 22, that is, the semiconductor elements and patterns formed on the surface, is detected prior to the detection of the particle information. Keep it.

  Next, in step S1, the substrate 22 to be processed is placed and fixed on the susceptor 24 in the foreign matter removing apparatus 10h, which is the main body of the foreign matter removing apparatus, by a known technique such as backside suction or edge suction.

  Next, in step S2 (particle information acquisition step), the particle information detected in relation to the particles adhering to the surface of the substrate 22 to be processed in step S0, that is, the particle information such as the position coordinates, particle size, and composition of the particles is shown in FIG. Obtained from the storage unit 73 and input to an arithmetic processing unit (not shown).

  Next, in step S3 (position selection step), based on this particle information and the planar pattern data of the substrate to be processed 22 sent from the input unit 74 to the storage unit 73 in FIG. Movement target position information, for example, coordinate information related to a plurality of non-functional parts outside the functional part, that is, the non-functional part serving as the target position of particle movement, is input to the arithmetic processing unit. Thereby, the priority order of a plurality of movement target positions is selected.

  Next, in step S4 (structural information acquisition step), structural information regarding the three-dimensional structure, material, fracture stress, etc. of the surface of the substrate to be processed 22 is obtained from the storage unit 73 and input to the arithmetic processing unit.

  Next, in step S5 (route selection step), calculation and selection of an optimum movement route based on the information obtained in steps S2 (particle information acquisition step), steps S3 (position selection step) and S4 (structure information acquisition step). Thus, a route is selected by selecting a movement target position suitable for the purpose from the priorities of the plurality of movement target positions described above.

  In step S5 (route selection process), the priority order of the movement target positions selected in step S3 (position selection process) was obtained in steps S2 (particle information acquisition process) and S4 (structure information acquisition process). Can change based on information. For example, with regard to the high-priority movement target position in the priority order selected in step S3 (position selection step), any possible route may include steps or irregularities that are difficult to pass through, or the high-priority movement target position. This corresponds to the case where the priority of other movement target positions and the possible routes are higher in the effect of safe or smooth cleaning as a whole than the priorities of these and possible routes.

  In this route selection process, the surface shape and three-dimensional shape and pattern of the substrate surface, the composition and strength of the material constituting them, the fine irregularities on the surface due to grain boundaries and surface roughness, that is, microroughness, occur during movement of particles. The above calculation is performed in consideration of factors that may be an obstacle to the movement of particles, such as the distribution of frictional force. These factors can be measured in advance, or can be measured on the spot by an optical method, a technique such as AFM (Atomic Force Microscope) or SPM (Scanning Probe Microscope).

With respect to the selection of the movement route, a route selection criterion set based on information acquired in advance is set, the degree of movement difficulty is derived for each selectable movement route, and the route with the lowest difficulty is selected.
The elements that make up the route selection criteria include the total length of the distance traveled, the level difference of the steps on the route and the ease of stepping based on the number of steps, the strength of the material and probe and particles that make up the steps, and movement The movement difficulty and distance of a section with much friction in the route, the movement distance related to the influence on the element and the influence, the priority order of the movement target position itself, and the like can be mentioned.

  Based on the route selection criteria set from these elements, the travel difficulty of the travel route is derived, and other routes such as other travel routes to the same travel target position and travel routes to other travel target positions If there is a travel route that is the least difficult, that is, a travel route that can be moved stably and reliably, and that is preferable to the travel route that has the shortest travel distance In addition, it is possible to select this with priority.

  As described above, the movement target position and the movement path are selected for each particle by the particle information acquisition process (step S2), the position selection process (step S3), the structure information acquisition process (step S4), and the path selection process (step S5). Later, in the foreign matter removing apparatus 10h in FIG. 1B, as shown after step S6 in FIG. 32, the particles are moved, detached and / or removed by the cleaning means such as a probe.

  That is, in step S6, the probe of the observation / cleaning unit 20 is arranged in the vicinity of the particle, the probe is brought into contact with the side surface of the particle, and moved along the route obtained in the moving route selection step in step S7. The distance between the probe and the surface of the substrate to be processed is smaller than the size of the particles, and the distance is maintained using a known contact mode technique of an atomic force microscope. If there are irregularities or steps in the movement path, the height of the probe is changed up and down along the three-dimensional structure.

It should be noted that the distance between the probe and the substrate surface can be changed or the load on the probe can be changed according to the state of the surface of the substrate to be processed as the movement path. The probe load is the pressing pressure of the probe.
In other words, if the load is too small, the probe will bend and bend due to the adhesion force of the particles, and the probe will get over the particle without moving it, but if the load is too large, the surface of the substrate to be processed will be damaged. Therefore, it is preferable to control the load as the pressing pressure or keep it constant, for example, by monitoring the deflection amount of the cantilever supporting the probe and keeping it constant.

  Next, as shown in step S8, after the particles are moved, that is, separated and / or removed to a predetermined non-functional part, the probe of the cleaning unit is detached, and the participation in the particles is released.

  Next, in step S9, it is determined whether or not all the particles to be removed have moved. If not, the operations from step S2 to step S9 are repeated until all the particles that need to be moved are moved.

  When the movement of all the particles attached to the surface of the substrate to be processed is confirmed in step S9, the operation is completed (step S10). The substrate to be processed is unloaded from the substrate inlet 18 shown in FIG. 1B (step S11). In this way, the cleaning of the particles for the substrate to be processed 22 is completed.

FIGS. 33A and 33B schematically show a state in which particles attached to the surface of a substrate to be processed (semiconductor wafer) 22 that is a substrate to be processed move to a non-functional portion by the foreign matter removing method of the present embodiment described above. .
In the example of FIG. 33A, when a foreign substance, that is, a particle 3 adheres to the surface of the semiconductor wafer 22 on which the functional area 4 such as wiring is formed, a predetermined non-functional area 5 provided outside the functional area portion 4a. For example, instead of simply moving the particles in a straight line (shown by a broken line arrow), for each particle 3, the priority order of the plurality of non-functional regions 5 is determined based on the distance from the particle 3, A movement path (shown by a solid line arrow) for each non-functional region 5 is selected based on information such as the three-dimensional structure, material, fracture stress, and composition of the particles 3 on the surface of the semiconductor wafer 22. The particles 3 are moved to the corresponding non-functional areas 5 along this movement path (shown by solid arrows).

  In this way, in the example of FIG. 33A, the movement path is selected based on not only the information on the planar structure but also the information on the three-dimensional structure such as the unevenness, steps and properties of the surface of the substrate to be processed. It is possible to avoid an increase in movement resistance due to the three-dimensional structure formed on the surface of the processing substrate 22 and the accompanying deformation, wear, crushing of particles, damage to three-dimensional structures such as probes, wirings, and elements. .

  Next, the example of FIG. 33B is a case where the particle 3 exists inside the impassable region 77. That is, one particle 3 is particularly delicately configured in a portion where an extremely high level difference is formed between the non-functional region 5 b selected in the position selection step and having a high priority, or in the semiconductor wafer 22. In the case where there are portions that are present, these portions are identified as non-passable regions 77 in the structure information acquisition step.

  As described above, in the region surrounded by the impassable region 77, it is possible to select the path by selecting the sub-optimal non-functional region 5c selected with a low priority in the position selection step as the movement target position. Accordingly, it is possible to avoid interruption of the cleaning operation due to the three-dimensional structure in the cleaning, that is, the movement of the particles, and damage to the elements and patterns forming the particles and the three-dimensional structure due to the movement of the particles.

Furthermore, in the foreign matter removal method according to the present embodiment, even when all the selectable movement paths must include irregularities and steps, the number of times of passing through these three-dimensional structures can be reduced, and the three-dimensional structures can be reduced. It becomes possible to avoid crushing and splitting due to wear and deformation when moving through.
That is, for the particles to be moved, they are caught by a step during movement and cannot move, the particles are crushed and split between the step and the probe, the elements constituting the three-dimensional structure by the stress at the time of catching, It is possible to select a movement path by identifying a step that cannot be overcome because the pattern is destroyed and a step that can be overcome without causing these problems.

  As described above, according to the foreign matter removing method according to the present embodiment, prior to the movement of the foreign matter, the structure information acquisition step, the particle information acquisition step, the position selection step, and the route selection step are performed. Compared to the conventional method, the surface of the substrate to be cleaned can be cleaned more reliably, that is, the particles can be moved and removed from the functional section more reliably, and the movement path of the particles must include irregularities and steps. Even if not, it is possible to reduce the number of times of passing through these three-dimensional structures, avoid crushing breakage due to wear and deformation when moving through the three-dimensional structure, and contact damage between the pattern and the probe, The yield can also be improved.

  The embodiments and examples described above can be variously modified based on the technical idea of the present invention.

  For example, after the foreign material 3 is detached from the functional region 4 by a shearing force, it can be sucked out by a suction means such as a nozzle at the separation position and stored in the storage unit. Moreover, the foreign material 3 collected in the non-functional area 5 can be sucked out by the suction means and stored in the storage portion. Further, after the foreign material 3 is separated from the functional region 4 by a shearing force, it may be separated from the functional region 4 and accommodated in the accommodating portion by electrostatic force or laser ablation.

  Further, the size, shape, material, structure, driving method, driving pattern, cleaning method and number of the probe 2, movement pattern of the foreign matter 3, aggregation method and removal method, etc. The type and supply amount of the gas, the type of the laser beam 46, the irradiation method, the irradiation time, the irradiation angle, the irradiation intensity, and the like can be flexibly changed in accordance with conditions such as the adhesion state of the foreign matter 3.

  Further, if the substrate 6 is a stencil mask, only the surface thereof may be removed, and if it is another substrate, both the front and back surfaces may be removed. The substrate 6 may be other than a stencil mask.

Moreover, the foreign substance removing apparatus described above can be diverted to, for example, laser light processing such as laser annealing processing, material exposure processing, and the like, in addition to the removal processing of deposits.
For example, in the above-described embodiment, the example in which the substrate to be processed is a semiconductor wafer has been described. However, the substrate to be processed is not limited to a semiconductor wafer as long as it is a structure in which adhered foreign matter is a problem. it can.

In addition, for example, in the above-described embodiment, the case where the information to be detected immediately before the acquisition of information and the movement of the particles is only the particle information has been described. It can also be detected immediately before the foreign matter removing method according to the present invention.
Furthermore, from these pieces of information that can be detected immediately before the foreign matter removing method according to the present invention, information about the three-dimensional structure of the substrate to be processed, such as pattern height and groove depth, design values, predicted values, etc. And can be used as a guide in the particle information acquisition process and the structure information acquisition process.

  In the above-described embodiment, the configuration in which the structure information detection unit 75 and the particle information detection unit 76 are provided in addition to the foreign material removal device 1 has been described as an example. However, these detection units are provided integrally with the foreign material removal device 1. It can also be set as the structure which is made.

  Further, for example, the information detected by the structure information detection unit 75 and the particle information detection unit 76 can be detected jointly with each other, and the particle information detection unit 76 detects the position, particle size, and number of particles. It is also possible to adopt a configuration in which both detectors are integrated by the same device.

In addition, when information with higher accuracy than structural information and particle information obtained in advance is required, that is, when more accurate information is required about the particles attached to the substrate to be processed and the surface, the cleaning unit, that is, the foreign substance removing device It is also possible to obtain more detailed structure information and particle information by performing measurement again inside the main body.
In the structure information acquisition process described above, not only the information on the three-dimensional structure of the substrate to be processed but also information on the original function of the semiconductor wafer or photomask that is the substrate to be processed can be stored in the storage unit described above. It is.

  Further, in the foreign matter removing method according to the present invention, after the final movement target position and movement path are selected by the path selection step, the movement path is detected by an observation unit provided separately from the cleaning unit, for example, a probe similar to the cleaning unit. The present invention can be used as a means for confirming whether or not all the particles on the surface of the substrate to be moved have been moved. Variations and changes can be made.

It is a fragmentary sectional view showing a foreign substance removal process by a 1st embodiment of the present invention one by one. It is a fragmentary sectional view which shows a foreign material removal process sequentially. It is a fragmentary sectional view which shows a foreign material removal process sequentially. It is a partial top view which shows a foreign material removal process sequentially. It is a partial top view which shows a foreign material removal process sequentially. It is a flowchart of the basic operation | movement of a foreign material removal apparatus similarly. It is a flowchart of the basic operation | movement of the foreign material removal apparatus by the 2nd Embodiment of this invention. It is a flowchart of the basic operation | movement of the foreign material removal apparatus by the 3rd Embodiment of this invention. It is a schematic sectional drawing of the foreign material removal apparatus by Example 1 of this invention. It is the fragmentary top view (A) which shows the board | substrate before the wiring process by Example 2 of this invention, and the enlarged plan view (B) of a part of board | substrate after a wiring process. It is the fragmentary top view (A) of the stencil mask by Example 3 of this invention, and the fragmentary sectional view (B) which follows the A-A 'line | wire. It is a flowchart of the foreign material removal apparatus by Example 4 of this invention. It is a schematic sectional drawing of a foreign material removal apparatus same as the above. It is a flowchart of the foreign material removal apparatus by Example 5 of this invention. FIG. 4 is a partial schematic cross-sectional view (A), a partial schematic bottom view (B) of the observation / cleaning unit, and a side view of the observation probe. FIG. 6 is a partial schematic cross-sectional view (A) of another observation / cleaning unit, a schematic structural diagram (B) of an optical position detection structure, and a side view of an observation probe. Side View (A), Cross Section View (B) of Probe, Cross Section View (C) of Another Probe, Cross Section View (D) of Another Probe, and Cross Section View of Another Probe (E). The side view (A) of a probe and sectional drawing (B) of a probe are the same. It is a flowchart of the foreign material removal apparatus by Example 7 of this invention. It is a schematic sectional drawing of a foreign material removal apparatus same as the above. It is a flowchart of the foreign material removal apparatus by Example 8 of this invention. It is a schematic sectional drawing of a foreign material removal apparatus same as the above. It is a schematic sectional drawing of another foreign material removal apparatus same as the above. It is a schematic sectional drawing of another foreign material removal apparatus same as the above. It is a flowchart of the foreign material removal apparatus by Example 9 of this invention. It is a flowchart of the foreign material removal apparatus by Example 10 of this invention. It is a schematic sectional drawing of a foreign material removal apparatus same as the above. It is the schematic for demonstrating the foreign material removal method by Example 11 of this invention. It is the schematic for demonstrating the foreign material removal method equally. It is the schematic (a)-(d) for demonstrating the foreign material removal method by Example 12 of this invention. It is the schematic diagram (A) and schematic sectional drawing (B) for demonstrating the foreign material removal method by Example 13 of this invention. It is a flowchart for demonstrating the foreign material removal method by Example 13 of this invention. It is the schematic diagram (A) of the 1st example for demonstrating the foreign material removal method by Example 13 of this invention, and the schematic diagram (B) of a 2nd example. It is a schematic front view of the foreign material removal apparatus by a prior art example. It is the schematic (A) before a movement of the method of performing a foreign material removal by the movement of a foreign material, and the schematic (B) after a movement. It is the schematic in the to-be-processed substrate which has a level | step difference of the method of performing a foreign material removal by the movement of a foreign material.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Cantilever, 2, 21 ... Probe, 3 ... Foreign material, 3a ... Processing foreign material, 4 ... Functional region, 4a ... Functional region part, 5a ... Non-functional region, 5b ... Non-functional region with high priority, 5c ... Non-functional area with low priority, 6 ... substrate, 7, 48, 57 ... concave, 8 ... convex, 9 ... tip, 10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h ... foreign matter removing device, DESCRIPTION OF SYMBOLS 11 ... Housing | casing, 12 ... Diffuser, 13 ... Chamber, 14 ... Air filter, 15 ... Supporting tool, 16 ... Exhaust port, 17 ... Exhaust port, 18 ... Substrate introduction port, 19 ... XY stage, 20 ... Observation / cleaning part, 22 ... Processed substrate, 23, 34 ... Cantilever replacement window, 24 ... Susceptor, 25 ... Scribe line, 26 ... Stencil mask, 27 ... Reinforcement beam, 28 ... Exposure pattern opening, 29, 52 ... Guide, 30 Cantilever exchanging part, 31 ... reference substrate, 32 ... cantilever handling machine part, 33 ... cantilever hand part, 35 ... spare cantilever group, 36 ... spare cantilever stage, 37 ... cantilever exchange indicator, 38 ... probe jig fixture, 39 ... Observation probe, 40 ... cleaning probe, 41 ... cleaning probe placement section, 42 ... observation probe placement section, 43 ... laser light source, 44a, 44b ... branching device, 45 ... optical position detector, 46 ... laser light, DESCRIPTION OF SYMBOLS 47 ... Probe jig, 49 ... Probe cleaning part, 50 ... Irradiation position and intensity control system, 51 ... Optical window, 53 ... Valve, 54, 64 ... Nozzle, 55 ... High humidity gas, 56 ... Clean air inlet / outlet, 58a, 58b ... optical axis, 71 ... cleaning assembly, 73 ... accumulating unit, 74 ... input unit, 75 ... Structure information detection unit, 76 ... Particle information detection unit, 77 ... Non-passable area, 95 ... Probe, 98 ... Cantilever, 101 ... Substrate to be processed, 113 ... Foreign substance, 114 ... Functional area, 115 ... Non-functional area, 118 ... Step 120 ... Observation / cleaning section

Claims (15)

A step of applying a shearing force to the foreign matter adhering to the functional area of the substrate to remove the foreign matter from the base; and a step of removing the detached foreign matter from the attached position to the outside of the functional region. A foreign matter removing method. The foreign matter removing method according to claim 1, wherein the detached foreign matter is moved to a non-functional region outside the functional region on the substrate. The foreign matter removing method according to claim 2, wherein the non-functional region is formed in a concave portion, and the foreign matter is dropped into the concave portion. The foreign matter removing method according to claim 2, wherein the foreign matter is removed or fixed in the non-functional region. 5. The foreign material according to claim 4, wherein a surface of the non-functional region is formed of a laser light good absorbency material or a hardly absorbable material, and the foreign material is removed or fixed in the non-functional region by laser light irradiation. Removal method. The foreign matter removing method according to claim 4, wherein the non-functional area is a scribe area. Detecting the adhesion position of the foreign substance on the substrate, setting the adhesion position and moving path of the foreign substance, bringing a shearing force applying means closer to the adhesion position of the foreign substance, and attaching the foreign substance The method for removing foreign matter according to claim 2, further comprising a step of observing the position.   After the predetermined foreign matter is moved to the non-functional region, the step of moving the other foreign matter to the non-functional region is repeated from the step of bringing the shearing force applying means closer to the attachment position of the other foreign matter. Item 8. A foreign matter removing method according to Item 7. After the step of moving the foreign matter to the non-functional region, the shear force applying means is provided in at least one of a case where this movement is not performed and a case where the foreign matter is present in the movement path of the foreign matter. The foreign matter removing method according to claim 7, wherein the steps subsequent to the step of approaching the foreign matter are performed again. Prior to the step of removing the foreign matter from the base and the step of removing the separated foreign matter outside the functional area,
A structure information acquisition step of acquiring information on the surface structure of the substrate detected in advance;
A particle information acquisition step of acquiring information of the foreign matter detected in advance;
A position selection step of selecting a priority order of the movement target position of the foreign object;
The foreign matter removal method according to claim 1, further comprising: a route selection step of selecting a movement route of the foreign matter to the movement target position. The foreign matter removing method according to claim 10, wherein the separation and / or removal is performed by bringing a probe into contact with the foreign matter. The foreign matter according to claim 10, wherein, in the route selection step, the priority order of the movement target positions selected in the position selection step is changed based on the information on the foreign matter and the information on the surface structure of the base body. Removal method. Prior to the particle information acquisition step, at least one of a particle information detection step for detecting information on the foreign matter and a structure information detection step for detecting information on a surface structure of the semiconductor device is provided. Item 11. A foreign matter removing method according to Item 10. The foreign matter removal method according to claim 10, wherein the movement route selected in the route selection step is confirmed prior to the separation and / or removal of the foreign matter. A shearing force applying means for applying a shearing force to the foreign matter adhering to the functional area of the substrate to separate the foreign substance from the base, and a means for bringing the shearing force applying means into contact with the foreign matter adhering to the functional area A foreign matter removing apparatus comprising: an actuating means; and foreign matter removing means for removing the foreign matter that has left the functional area from the attached position to the outside of the functional area.

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